LETTER TO (SANITIZED) FROM (SANITIZED)

• Document Type: CREST
• Collection: General CIA Records
• Document Number (FOIA) /ESDN (CREST): CIA-RDP78-03424A001200140036-6
• Release Decision: RIPPUB
• Original Classification: S
• Document Page Count: 3
• Document Creation Date: December 22, 2016
• Document Release Date: February 22, 2012
• Sequence Number: 36
• Publication Date: August 17, 1960
• Content Type: LETTER

Declassified in Part - Sanitized Copy Approved for Release 2012/02/22 : CIA-RDP78-03424AO01200140036-6
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17 August 1960
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,.Project 64.15
Project 64.15 consists of Phase I, 5 groups of bandpass amplifiers and
Phase II, a study and development of a 500 to 1000 mcs transistor amplifier.
The amplifier frequency ranges are:
Type
1
50-90 mcs - -5-c-
Type
2
100-150 mcs -See,
Type
3
50-250 mcs - io
Type 4
250-500 mcs /o 4-6"
Type 5
600-700 mcs - Sty
Prototypes of these amplifiers have been built with characteristics similar
to those stated in Proposal P-1150.
The individual amplifiers will be standardized to fit in a package approxi-
mately 1 x 1 x 22 inch modules, except for Type 5, 600-700 mcs. Each module
will contain four transistor stages. For field repair modules may be
replaced. For multi-module amplifiers, single inoperative stages may be by-
passed for continued operation at reduced gain. Amplifier types 1, 2, and
3 contain one module, Type 4 contains two modules and Type 5 contains
approximately four modules. A variety of tentative packages have been
fabricated and drawings have been prepared for the preliminary model of
the selected package type.
The chassis will probably be silver plated bronze with aluminum or silver
plated brass covers.
CONFII
PAL
Declassified in Part - Sanitized Copy Approved for Release 2012/02/22 : CIA-RDP78-03424AO01200140036-6
 Declassified in Part - Sanitized Copy Approved for Release 2012/02/22 : CIA-RDP78-03424AO01200140036-6
u a.
Page 2
17 August 1960
Power connectors have been specified by the contractor. The batteries to
be used with the amplifiers will not be supplied but will be specified as
required, depending on the results of environmental tests.
A design figure of merit may be defined as:
DFM=Gxfc2xPo
Pin xVxNF xS
G =
fc =
Po =
Pin =
V =
NF =
S =
Power gain
Upper cutoff frequency
Available signal power
Power supply input
Amplifier volume
Noise Figure
Temperature stability
For specialized applications each of the factors are weighted. However,
for a given application the design figure of merit provides a useful
comparison for the different amplifiers.
Accordingly, these amplifiers will be designed for optimum DFM.
The gain G, and upper cutoff frequency fc, of each amplifier type is fixed
by application requirements. Although these are bandpass amplifiers for
one or two octave coverage the lower frequency limit may be neglected. The
upper cutoff frequency is squared for transistor amplifiers and a linear
function for vacuum tube amplifiers.
The power output Po is constant and is of little importance for small signal
pre-amplifiers.
The power input and physical size of these amplifiers will be kept as small
as possible.
In the design of broadband transistor amplifiers it is possible to eliminate
some circuit components and to operate the transistors more conservatively
resulting in more stages, but reduced overall size and power requirements.
Noise figure must be kept as small as possible if an improvement in system
tangential sensitivity is to be realized.
Stability factor, S, will be small to reduce the effects of supply voltage
variations and to permit operation over a wide range of temperatures.
Declassified in Part - Sanitized Copy Approved for Release 2012/02/22 : CIA-RDP78-03424AO01200140036-6
 Declassified in Part - Sanitized Copy Approved for Release 2012/02/22 : CIA-RDP78-03424A001200140036-6
Page 3 17 August 1960
Section II of P-1150, the study and development of a 500 to 1000 me ampli-
fier has begun with the measurement of high frequency parameters of transistor
types 2N700 and 2N502. Other high frequency transistors have been ordered
and will not be available before 6 to 8 weeks. The usual data as supplied
by manufacturers is very sketchy for high frequency parameters. Deviations
from published data of greater than 30% have been observed. For performance
to 1000 mcs, high frequency parameters must be measured.
Project Engineer
LR:gsj
This document contains information
affecting the national defense of the United
Stat?s within the meaning of the Espionage
Laws, Title 18, U.S.C., Sections 793 and 794.
Tha transeni.sion or the revelation of its
contents in any manner to an unauthorized
person is prohibited by law,
n'NFMENP
Declassified in Part - Sanitized Copy Approved for Release 2012/02/22 : CIA-RDP78-03424A001200140036-6