PHYSICS

Document Type: 
Collection: 
Document Number (FOIA) /ESDN (CREST): 
CIA-RDP80-00809A000600210082-8
Release Decision: 
RIPPUB
Original Classification: 
C
Document Page Count: 
13
Document Creation Date: 
December 22, 2016
Document Release Date: 
June 23, 2011
Sequence Number: 
82
Case Number: 
Publication Date: 
January 18, 1949
Content Type: 
REPORT
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PDF icon CIA-RDP80-00809A000600210082-8.pdf1010.41 KB
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Sanitized Copy Approved for Release 2011/06/24: CIA-RDP80-00809A000600210082-8 PBOT CK= A>I> I WYR's Al AJITDMJIiT- = aAn= (HOW= PWMM) 8. M. Ys isltgi Astamatios sn1 Telsasohanlos naatitute AoadmW of 8eleae. MO Submitted 28 Aapmst 1947 f was rsfsrred to heroin are appended]. 1$troamticn Mysm solving ? bur of preblsmr in varies f1sl6s of "lame sad teobmri- olp, diffioaltiss often arias in ehoosiag a method for meaearins feeble lip)tt fltsss. 'lbw, for instanee, in am problans of atrospherio option, a vmey eayliesto` ,aMtthod is m~icyed in pkotmwaie snal$is of vea9 Desk lip~t In- tommitlee we ~ veil-kacsm ssShods based m mlasnrtag 1I6it I tsmsitF b7 Massa of eleetrambtIi or t,b si the eaplIfioatioe of photdea=srf 17 ama.o of moms token. Pracvlee shoes that, teem* of their ecmplses11I,7i tbese asthods salnuot be based wpm vida17 wed side vhotmetrie apperstme ads"" for daily me. its priaeipie of maltiple s+lifioatica b,7 assns of sescmdar7-sleotroa aolaoicm has as its basis the oamstrnotim A himbli asasit ve aaltiplier In- 4 is sash as the easbinatim of photsleetrioa117 ao+ire oetboam alto effostive snifters, whose astim sassnts ?o asplifjing'As esth'4.a photo- esrasmt. The positive rtsalts obtoiasd reasntly (3,4,5) In t07Sm ph.tosleetbon aaltiplisrs In spse'ran analysis and astrasm p attraot$1 She attmmltim of any swearoh voehsrs, mad ~17 revived the interest in phvto- elssram aaltipliees. CLA:. .-CATION CO1'3A:. CENTRAL IN MV h REPORT INFOR ffffl FOREIGN DOCUMENTS OR RADIO BROADCASTS CD NO. COUNTRY ussa SUBJECT Pbisics HOW PUBLISHED 10104tbl7 psriodieal WHERE PUBLISHED DATE PUBLISHED dsnaaa7.1948 LANGUAGE Rnrpien I. L C.. 81 M2 U. A@ "INSW M'}Y0M1oYO. w m0 anoawaow. M els CICtgw M 1,t wIn 18 La ,LMt1 I .. hRwse IC PCI, r4xtR, YU. 5110101101 w v,m Pon a sea1"1110s. DATE OF INFORMATION 1947 DATE DIST.I8 dsmhae7 1949 SUPPLEMENT TO REPORT NO. SOURCE Vnr=l T eeisheskar 71miki, To31. ZYIII, No 1, 1948. (]'b8 Per Abe 41490 -- Trans tiro wpboifioall7 requested.) 50X1-HUM Sanitized Copy Approved for Release 2011/06/24: CIA-RDP80-00809A000600210082-8 Sanitized Copy Approved for Release 2011/06/24: CIA-RDP80-00809A000600210082-8 (ONFP, In the multistage secondary-electron multiplier in a glass envelope and elbotromagnetic focusing suggested by KubeLskiy, a oanplicated Ag-O-Ce layer was employed as a cathode, and a Cu-S-Cs-layer as an emitter in cascades. These layers were unresponsive to temperature changes and were efficient in respect to secondary-electron emission. In this type of multiplier (with 13 stages) with a total applied voltage of 750, an~ lifioation of 103 is obtained, which provides speotroseneitivity of 1-3 A/lm (amperes/lumens). The dark current of multipliers with given parameters varies from one type to another within the limits of 10-6 to 10-! A. Itmy be considered an established fact that the basic cause of dark current in an multiplier is the thermionio emission which can be considerably decreased by in- creasing the operating output or by cooling the cathode (8,9). The magnitudes of the speotrosensitivity and the dark current, as is well know determine the threshold sensitivity of the multiplier, (The term threshold sensitivity means the point at which the light stream pro- dunes a flux equal to the dark current. In fact, the threshold sensitivity is determined ::y fluctuations of the dark current.) In striving to improve ", the parameters of a photoelectron multiplier, 1. e., to lower its threshold sensitivity, an antimony-cesium cathode was tabstituted for the Ag-A-Ce cathode. Among the qualities of the antimony-cesium cathode area .nigh speetrosensitivity in the visible part of the spectrum (10,11), large quantum output (12,13), and resistance to changes of temperature, as well an a low vain, of dark current (14), and high durability. There is no apparent possibility of combining a Cu-S-Ca emitter and an antimony-cesium cathode since, according to literature on this subject, the presence of traces of sulfur greatly lovers the sensttititj of the latter (15). However, as a result of the work undertaken, as may be seen below, a technological method was worked out which guaranteed the production of a sensitive cathode with a Cu-S-Ce emitter containing sulfur. Research Procedure The procedure in obtaining secondary-electron multipliers (having an antimony-cesium cathode) with a glass envelope consisted mainly of the following stages: 1. Application, by chemical cooling and electrolysis, of a layer of miller On Ws inner wall of a glass tube. The silver layer served as a lining for the On-S-Cs emitter and made contact with 15 platinum lead-ins soldered into the glass. As a result of the deoxidizing reaction, the silver was oeparated into: Z,(Ka( ) 7 O3+C6H12o6 = C6H1207+ 4IH3+ H2O+2Ag. 2. Zleotro:y"io application of a layer of copper and treatment with hydrogen sulfide. Due to the action ofthb sulfur, a layer of cuprous sulfide was f;+' se on the copper. The reaction, as is well known, takes place in two, was n Cn2t+} . Cu28+H20, 2Cn}H2S+ 2 Cc28+320. ). Scaling the antimony atomiser in the tube a4d degasaing the tube in a vacena apparatus nsder conditions similar 'a the well-known msthod of pre paring a layer of Dhotoeleegnt on glass. 4. Application of a local layer of antiaw4y to the glass near the first stags by vaporisation of an antimony ball, screened from the window-side of the multiplier, in a high vacuum (10'6 ma). The opaque layer of intimacy produced in this manner has a metallic luster. To obtain simple antimony- cesium cathodes, the surface of the glass is cooled by an air current during the process of coating with antimony. (ONFmffi f* Sanitized Copy Approved for Release 2011/06/24: CIA-RDP80-00809A000600210082-8 Sanitized Copy Approved for Release 2011/06/24: CIA-RDP80-00809A000600210082-8 CONFIDENTIAL The layers (of antimony and cuprous sulfide) are activated at a ten- perature of 2100 C with cesium vapor which is introduced through a glass bulb connected at the anode aide of the tube. The cesium is obtained by heating a nickel each filled with a mixture of C?CL+ Ca in a high-frequency oven. The activating process is controlled by taking psriodio measurements using a "guard ring," of the cathode photocarrent and "leaks" (interstage conductivity) between the cathode and the first stage. The source of light is provided by an incandescent imp (6 - 8 volts) fastened to the cathode of the tube, which is excited only at the moment when measurements of the photoeurrent are; made. Activating Procedure The properties of the inspected cathode changes according to the de- gree of the absorption of the cesium by the antimony layer. This is evi- dent in the changes of the photocurrent and thermoelectric current in time. When the point of mnximam behsitivity is reached, the layer takes on a dark red color as the light is passed through, during which the photo- emission remains for some time at a constant maximum magnitude. At this point the oven is switched off, the bulb with the excess cesium unsoldered and, if there are no large "Leaks" in. the last stages, the secondary- electron multiplier is unsoldered. The thermal emission of the antimony-cesium cathode at this tempera- ture (210?0) is small, approximately 60 - 80 times lose than for an oeeiua- ozide cathode. For this reason, in contrast with the cesium-oxide cathode, whore thermal emission at the given temperature is sufficiently large, we were obliged, in obtaining antimony-cesium cathodes, to control the acti- vating process from the standpoint of photocarrent and not thermoelectric emission. The well-known fact (16) of the dependence of photosensitivity on the temperature of an antimony-cesium cathode demandeu attention. The photo- sensi''vity of the cathode increased in proportion to its cooling from 210 C to room temperature. At room temperature the photosensitivity was two to three times greater than at 2100 C. One very interesting result was that at a given temperature, the coppor-sulfide layer in the oaccades was also aotivated by the secondary- electron emission sloultaneaicly with the activation of the cathode. This ooadition, and also the absence of an intermediate stage of oxidation and partial deoxidation, simplified the technological method of obtaining a photoelsotron multiplier in which the Ag-O-Cs cathode in it is replaced by antimony-teem, cathode which surpasses the AS-0-0s only in respect to sensitivity in the red and infrured bawds of the spectrum. Multipliers with an antimony-cesium cathode, obtained by the method mentioned, were invaatigated from the standpoint of the photoelectric properties of the cathode and the secondary-electron emission properties of the emitters is casoade. Zteosemsitivitt of the Cathode Ilse.saromont of the absolute photosensitivity is carried out b' illasioating a point (1 eq cm) on the surface of the cathode by an- decomposed Light (2.6 z 10-2 lm) from an incandescent lamp with Tc e 2,8h80 K. As shown by Table 1, the photosensitivity of the cathode in multipliers varies between the limits of 50 and 125,+/!4x. According to Glover and Janes (17), the photosensitivity of an antimony-cesium cathode to daylight is approximately two - two and one-half times greater than the photosensitivity to the light of an incandescent lamp with To , 2,6480 K. CONFJiJENTIAL Sanitized Copy Approved for Release 2011/06/24: CIA-RDP80-00809A000600210082-8 Sanitized Copy Approved for Release 2011/06/24: CIA-RDP80-00809A000600210082-8 CONFAD No of Multipliers Sensitivity of (test series) Cathode (lnO?cA/ls!- h 68 9-i i knoMp, can be greatly increased by surface o9cidatlon with csygm as at low is n s sufficient which can be done s practice without och difficulty. It eienent t t to state that M IZ, using this method in serial production ob- talnsd entisany-cesium photosleaents with a sensitivity of 125,,1 A/Ion or bettpx. However, the speotrosemsitivity curve of high sensitive photoelements differs from that of standard antics -Gesium photoeleaents; the nazis ofv sensitivity and the rod limit are displaced toward the log-wave lengths, which results, as easy be seen from Sommer I s work (13)' from the decrease In the operating efficiency due to the oxidation of absorbed cesium ataaa. This is olio comtirsad by the increase in thermionic emission. Ion this reason we were obliged, for the time being, to give up the idea of Increasing the sensitivity, because, otherwise.the gain of two or awe time in the zpootrosemsitivity would entail, as will be evident later, the Increase in the photoelectron multiplier of the dark current which in effect is thearw. esilasfs+es 1' , rfeCdr:6. ot, hd 4wrktr 'catdaticselould affect the secondary- electron properties of Cu-S-Cs emitters in cascade. decandarr-Aectron Enissian of a Cu-B-Cs Tearer With a view to clarifying the secondary-electron properties of the .sitter In a photoelectranic multiplier, meacureaents of the coefficients of oaocodary-eleott.an emission g- of a Cu-Sc+Ca layer in all stages were made by a yisple method. The essence of the method c nsisted In taking sianlteneoas measurement of three adjacent stages which were placed under voltage. The initial electrons were photoelectrons, originating as a rosult of illuminating one of the cascades by a narrow pencil of white light (sensitivity of the on-i-cs layer 2 - For this purpose, in the process of plotting the curve of the emitter, an aperture 2 ma wide is left along the whole length. Photoelectra!s, moving in an electric field, are focused by an external aeg