SOVIET GERMANIUM DIODES

• Document Type: CREST
• Collection: General CIA Records
• Document Number (FOIA) /ESDN (CREST): CIA-RDP80-00809A000700130640-5
• Release Decision: RIPPUB
• Original Classification: R
• Document Page Count: 4
• Document Creation Date: December 22, 2016
• Document Release Date: September 26, 2011
• Sequence Number: 640
• Publication Date: October 6, 1953
• Content Type: REPORT

Declassified in Part -Sanitized Copy Approved for Release 2012/02/08 :CIA-RDP80-00809A000700130640-5
CLASSIFICATION RESTRICTED
SECURITY-INF~RifiION
CENTRAL INTELLIGENCE AGENCY
INFORMATION FROM
FOREIGN DOCUMENTS OR RADIO BROADCASTS
.COUNTRY UssR
SUBJECT- .Scientific -Electronics, germanium diodes
HOW
PUBLISHED Monthly periodical
WHERE
PUBLISHED Moscow
DATE
PUBLISHED MaY 1953
LANGUAGE Russian
.,. , ~ -. ten.u. i.ro..?no, ., ., ,.? ,?nau e , .
or rx.eux rrm turn; nwu ntyun,acor nn. i acrie,.~r.o
?,e n?. or ,xt u. t. test.. ...wom, ~.. r.uwntio, o. nn.
unw o. m ca,n?n ro at.nu.r n ., ,. xontte .ueo, n
..e_ a ~, ..,.,.....
Radio, No 5, pp 27-?8
REPORT
CD N0.
DATE OF
INFORMATION 1953
NO. OF PAGES 4
SUPPLEMENT TO
REPORT N0.
THIS IS UNEVALUATED INFORMATION
Germanium is a typical semiconductor with unidirectional conductivity.
- 1 -
Declassified in Part -Sanitized Copy Approved for Release 2012/02/08 :CIA-RDP80-00809A000700130640-5
 Declassified in Part - Sanitized Copy Approved for Release 2012/02/08: CIA-RDP80-00809A000700130640-5 ~
~.~ .
Like other semiconduct?.ng rectifiers, high?woltage germanium diodes are
sensitive to changes of ambient temperature. As a rule, the forward and in-
verse currents increase with increasing ambient temperature and decrease with
decreasing .ambient temperature. For example, at a temperature of * 70? C, the
.forward current is almost doubled, while the inverse current is approximately
tripled.
The technical specifications established for the basic electrical para-
meters of various types of diodes produced by Soviet industry are given in
the following table (for ambient temperatures of 20t 5? C).
T
Nlax Inverse
Working
Min Inverse
Breakdown
Min Forward
Current (ma)
Max Inverse Current ~ma)
for a w~rkina Vnltaae of
ype
Volta a (v
Voltage (v)
at + lv
-50
-75
-100
DG-Tsl
50
--
2.5
--
1.0
--
--
DG-Ts2
50
75
a.o
--
0,5
--
--
DG-Ts3
50
75
2.5
--
0.1
L.^.-Ta4
75
100
2.5
--
--
0.8
DC-Ts5
75
100
l.0
--
--
0.25
-
DG-Ts6
100
125
2.s
__
__
__
n
8
DG-T37
lOC
i-.
1..1
--
--
--
,
0.25
Germanium .diodes of the various types can be recommender far usn t? the
1 P
The smal).capacitance of germanium diodes in comparison with other types
(vacuum, copper-oxide, and selenium) and their economy (obtained because of the
absence of a filament) make .them very effective for many applications.
Germanium diodes can be used extensively in radio and measuring e~ui went
---? -- --????--~~~ .. y.+.