GERMANIUM TRANSISTORS AND DETECTORS MANUFACTURED BY WERK FUER FERNMELDEWESEN HF (OSW)

• Document Type: CREST
• Collection: General CIA Records
• Document Number (FOIA) /ESDN (CREST): CIA-RDP80-00810A001200690002-1
• Release Decision: RIPPUB
• Original Classification: S
• Document Page Count: 2
• Document Creation Date: December 21, 2016
• Document Release Date: April 13, 2009
• Sequence Number: 2
• Publication Date: May 22, 1953
• Content Type: REPORT

Approved For Release 2009/04/13: CIA-RDP80-0081 OA001200690002-1
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Approved For Release 2009/04/13: CIA-RDP80-0081 OA001200690002-1
 Approved For Release 2009/04/13: CIA-RDP80-0081 OA001200690002-1
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5. The following is a diagrar._ of a highfrecqucncy gen.-man urn mnrlif;ring,
circuit (transistors) : `
a. external working resistance
b. control point (uteuerspitze)
c. wort point (Arbeltsspitze)
d. germanium block
e. base plate
f. space 0.05 to 0.25 millimeters
6. The above circuit makes a high-?frequency amplification possible witl
out the use of electronic tubes. It consists of ? snail germanium
bicel with two point electrodes and a surface electrode.
7. The electron holes (Defektelel:tronen) in addition to the electrons c p
the atonic shells (conduction electrons) in germanium are capable of
moving about, whereby they form a regul.ar current. Generally the cc -.
suction electrons are predcninan.t inside the germanium blcc1 ? Howei ,
electron holes can be moved from the circuit into the block through
positively charged point electro