SILICON TRANSISTORS TO BE DEVELOPED AT VEB WERK FUER FERNMELDEWESSEN AND VEB CARL VON OSSIETZKY

• Document Type: CREST
• Collection: General CIA Records
• Document Number (FOIA) /ESDN (CREST): CIA-RDP80-00810A004000350008-1
• Release Decision: RIPPUB
• Original Classification: S
• Document Page Count: 1
• Document Creation Date: December 22, 2016
• Document Release Date: June 5, 2009
• Sequence Number: 8
• Publication Date: April 23, 1954
• Content Type: REPORT

Approved For Release 2009/06/05: CIA-RDP80-0081 OA004000350008-1
CENTRAL INTELLIGENCE AGENCY
INFORMATION REPORT
COUNTRY East Germany
SUBJECT Silicon Transistors to be Developed
at VEB.Werk fuer Fernmeldewesen and
VEB Carl von Ossietzky
This Document contains information affecting the Na-
tional Defense of the United States, within the mean-
ing of Title it, Sections 793 and 794, of the U.S. Code, as
amended. Its transmission or revelation of its contents
to or receipt by an unauthorized person is prohibited
by law. The reproduction of this form is prohibited.
REPORT
DATE DISTR.
NO. OF PAGES
REQUIREMENT
REFERENCES
THE SOURCE EVALUATIONS IN THIS REPORT ARE DEFINITIVE.
THE APPRAISAL OF CONTENT IS TENTATIVE.
(FOR KEY SEE REVERSE)
23 April 1954
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1. After development of germanium transistors was removed from VEB Werk
fuer Fernmeldewesen, Berlin Oberschoeneweide, at the order of the
Russians, the enterprise received in early March 1954 a development
order from the East German government for silicon transistors. The
development is under the direction of Dr. Boehm (fnu).
2. VEB Carl von Ossietzky (Dralowid), which is engaged in development
of germanium transistors, also started development of silicon
transistors in mid-February 1954.
#x
(Note: Washington Distribution Indicated By "X"; Field Distribution By "#".)
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Approved For Release 2009/06/05: CIA-RDP80-0081 OA004000350008-1