SUCCESSFUL TRANSISTOR DEVELOPMENT AT WERK CARL VON OSSIETZKY (DRALOWID)

• Document Type: CREST
• Collection: General CIA Records
• Document Number (FOIA) /ESDN (CREST): CIA-RDP80-00810A004100110007-7
• Release Decision: RIPPUB
• Original Classification: S
• Document Page Count: 1
• Document Creation Date: December 14, 2016
• Document Release Date: June 4, 2002
• Sequence Number: 7
• Publication Date: May 13, 1954
• Content Type: REPORT

Approved For Release 2002/07/24: CIA-RDP80-0081OA004100110007-7
CENTRAL INTELLIGENCE AGENCY
INFORMATION REPORT
COUNTRY East Germany
SUBJECT Successful Transistor Development at
Werk Carl von Ossietzky (Dralowid)
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SOURCE:
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This Document contains information affecting the Na-
tional Defense of the United States, within the mean-
ing of Title 18, Sections 793 and 794, of the U.S. Code, as
amended. Its transmission or revelation of its contents
to or receipt by an unauthorized person is prohibited
by law. The reproduction of this form is prohibited.
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DATE DISTR.
NO. OF PAGES
REQUIREMENT NO.
REFERENCES
THE SOURCE EVALUATIONS IN THIS REPORT ARE DEFINITIVE.
THE APPRAISAL OF CONTENT IS TENTATIVE.
(FOR KEY SEE REVERSE)
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13?May 1954
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1. Dr. Matthias Falter of the Carl von Ossietzky Werk (formerly Dralowid) in
Teltow, after having succeeded in developing transistors of the point-contact
type in a relatively short time., was invited by the Ministry for Post and
Telecoimnuiieations to demonstrate his transistors to experts of the Ministry.
He did so in early January 1954. The transistors were found satisfactory in
every.respect. Dr. Falter's success was immediately reported to the Russian
authorit4,es. Subsequently, a Russian inspection team appeared at Falter 's
plant and tested the transistors there, The Russians were quite surprised at
Falter's work, especially since he had accomplished it in such a short time.
2.. On-about 20 January 1954, a Russian commission., headed by a civilian who
identified himself as Major Ivanov 1 visited the development department of the
Werk fuer Fornmeldewesen HF (formerly OSW) in Berlin-Oberaehoeneweide and
seized all transistors either completed or in development, all germanium
supplies, measurement devices and tools used for the development. At the same
time, the management was notified that effective immediately all funds for
transistor development at the HF Werk were withdrawn. Ivanov accused leading
specialists who had been engaged in transistor development, mainly Dr. Walter
Rohde and Dr. Boehm (fnu), of sabotage on the grounds that they had not been
able to complete the development successfully after more than two years. Dr.
Rohde was immediately transferred to another HF department; Dr. Boehm was
ordered to assist the Russians in winding up transistor development at the
enterprise.
One day after the incident at the HF Werk, Dr. Falter of Dralowid was
notified by the Russians that in the.future transistor development for the
Russians will be carried out exclusively in the Carl von Ossietzky Werk.
1, 1I Comment, - a Russian acceptance official Ivanov
was repor ea To ited the HF Werk three times from 1951 to 1953.
He was said to be stationed at Sachsenwerk Radeberg.
STATE ARMY
X . NAVY
Approved For Release 2002/07/24: CIA-RDP80-0081OA004100110007-7
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