TRANSISTOR DEVELOPMENT AT VEB WERK FUER BAUELEMENTO DER NACHRICHTENTECHNIK CARL VON OSSIETZKY TELTOW

• Document Type: CREST
• Collection: General CIA Records
• Document Number (FOIA) /ESDN (CREST): CIA-RDP80-00810A005700350011-2
• Release Decision: RIPPUB
• Original Classification: S
• Document Page Count: 2
• Document Creation Date: December 21, 2016
• Document Release Date: March 17, 2008
• Sequence Number: 11
• Publication Date: February 11, 1955
• Content Type: REPORT

Approved For Release 2008/03/17: CIA-RDP80-0081 OA005700350011-2
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CENTRAL INTELLIGENCE AGENCY REPORT
INFORMATION REPORT CD NO.
COUNTRY East Germany
SUBJECT Transistor
Bauelement
von Ossiet
PLACE
ACQUIRED
DATE OF
INFO.
THIS DOCUMENT CONTAINS INFORMATION AFFECTING THE NATIONAL DEFENSE
OF THE UNITED STATES. WITHIN THE MEANING OF TITLE 18. SECTIONS 793
AND 794. OF THE U. S. CODE. AS AMENDED. ITS TRANSMISSION OR REVEL-
ATION OF ITS CONTENTS TO OR RECEIPT BY AN UNAUTHORIZED PERSON
18 PROHIBITED BY LAW THE REPRODUCTION OF THIS FORM IS PROHIBITED.
boratory at the Dralowi Falter developed
DATE DISTR. 11 February 1955
NO. OF PAGES 2
NO. OF FIL,S.
(LISTED BELOW)
SUPPLEMENT TO
REPORT NO.
THIS IS UNEVALUATED INFORMATION
N 1101"1'04 1 A # t Y
eering Plant under the supervision of
inued at this enterpris rred to Dr
transis 'germanium basis with an indium. This
development work was scheduled to be comp Peg "M end of October
1954. Technical specificAtions for this type of transistor included:
Voltage : 50 to 100 V
Power output : up to 20 mW
gel): 200 mV
Limit frequency: 1 to
- Amplification : 50 to
Sensitivity : 50 to cu ao otal resistance in relation to
noise resistance measured at the equivalent input
resistance)
b. Development of two types of transistors for oscillators and amplifiers.
It was also intended further to develop these transistors for
frequencies from 5 to 10 Mc. -
co Development of germanium diodes in whi
pass voltage (Durchlass-Spannung) were
at a current intensity of 10 mA. It is
diodes, one for 2 and one for 5 mA. Th
d. Experiments to manufacture resistances which have a boron-treated
carbon layer. These resistances are believed to be much more efficient
and much easier- tureMo
ver., they are much more sensitive
CLASSIFICATION
STATE NAVY
ARMY AIR
NSRB
FBI
DISTRIBUTION
I
25X1
Approved For Release 2008/03/17: CIA-RDP80-0081 OA005700350011-2
 Approved For Release 2008/03/17: CIA-RDP80-0081 OA005700350011-2
Approved For Release 2008/03/17: CIA-RDP80-0081 OA005700350011-2