JPRS ID: 8395 TRANSLATIONS ON USSR SCIENCE AND TECHNOLOGY PHYSICAL SCIENCES AND TECHNOLOGY

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~7PR8 L/8395 �
1.2 Apri 1. 19 79
~
TRANSLATIONS ON USSR SCIENCE AND TECHNOLOGY
- PHYSICAL SCIENCES AND TECHNOLOGY
(FOUO 20/79)
U. S. JC)INT PUBLICATIONS RESEARCH SERVICE
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COPYRIGl1'I' tAWS A~ .�.~'GULATIONS COVERNINC OWNERSHIP OF
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JPRS L/8395
~.2 Ap~~. ~.9 79
- TRANSLATIONS ON USSR SCIENCt AND TECHNOLOGY
~ PNYSICAL SCIENCES AND.TECHNOLOGY
(~ovo ao/~9) � ~
CONTENTS PAGE
ELECTRONICS AND ELECTRICAL ENGTNEERING
Circuit-DeBign Technique~ fox Reducing the Switchi~g Factor
in Digital Systems Based on IntegraCed In~ection Logic
(I. I. Shagurin; IZVESTIYA VIJZOV: RADIOELEKTRONIKA,
_ No 12, 1978) 1
I2L Quaeistatic Memory Cell
(V. V. Barihov; TZVESTIXA WZOV: T2ADI.OELEKTR~NIKA,
' No 12, 1978) 7
The Relationship BetWeen Sea Wave Spectra and the Spectral �
and CorrelaCion Characteristics of a Reflected Radio
S ignal
(A. A. Garnaker'yan; RADIOTEKHNIKA I ELEKTRONIKA,
Dec 78) 14
~ Transformation of the Sum of Z~ro Periodic Phase Modulated
Signals by a Digital Side Lobe Cancellation Filter
(V. P. Ipatov, et al,; RADIOTEKHNIKA I ELEKTRONIKA,
_ Dec 78) 25
~ Digital Phase-;.ocked Loopg for Processing `'ideo Signals
(H. I. ZhodzishskiX; RADIOTEI~iNIKA I ELEKTRONIKA,
Dec 78) 32
SCIENTISTS AND SCIENTIFIC ORGANIZATIONS
Viktor Amazaspovich Ambartsumyan ~
(VESTNIK AKADII~tII NAUK SSSR, Na 2, 1979) 44
Valentin Petrovich Gluehko
(VESTNxK AKADII~iII NAUK SSSR, No 2, 1979).�.�..��...�..... 46
-a- [SII -USSR-23S &T FOUOj
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CONTENTS (Con~inued) ~agQ -
- Sergep L'vovich 5obolev '
(VESTNIK AKADEMTI NAUIC SSSR, No 2, 1979) 48
I1'ya Mikhaylovich Frank
(VESTNTK AKADEMT~ NAUK SSSR, No 2, 1979) 50
Basic Trende of Sc ientif ic Research of the Asn~SSR Academy ~
of Sciences
(V. A. Ambartsumyan; VESTNIK AN SSSR, No 2, 1919)...... 52
On the AcCivity of the Division of Oceanology, Atmospheric ,
Phqsics and Geography
(L. M. Brekhovskikh; VESTNIK AN SSSR, No 2, 1979)...... 62 _
PUBLICATIONS
Accelerated Electron Beam Transmitter
(ELEMENTX PEREDATCIiTKOV ~ U~KORENNXM~ ELEKTRONNY.~II
PUCHICAMT, 1978) ..........................e............. 72 ~
>
Theory of Signal Transmissi,on in Proble~ns
(TEORIYA PERIDACH~ SIGNALOV V ZADACHAI~i, 1978)......... 75 ~
Capsulation of Radioelectronic Gear ,
(GERMETIZATSIYA RADIOELEKTRONNOY APPARATURY, 1978)..... 78
-b-
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ELECTRONTCS AND ELECTRICAL ENGINEERTNG ~
unC 62i.382.8.38i
CIRCUIT-DESIGN TECHNIQUES FOR REDUCING THE SWITCHING FACTOA IN DI(~ITAL
SYSTEMS BASED ON INTEGRATED INJECTION LOGIC
Kiev IZVESTIYA WZOV: RADIOELEKTRONIKA in Russian Vol 21, No 12, i978
pp 37-~+0
[Article by I. I. Sha~urin] ~
[Text] An examination is made of possible methods of
structural organization of c~igital systems based on I2L
for reducing power aonsumption P and switching factor A. .
It is shown that staged connection of in,jection coupled
LSI chips with series-conn~cted in~ectors reduces the
values of A and P by a factor of four, while the use of
active-passive supply cuts these parameters by an order
of magnitude or more. New types of microcircuits are
suggested for realizing these advantages.
Among the bipolar transistor logic circuits, those based on integrated
in,jection logic (I2I,) give the lowest switching factors A= Pt3, where P,
t3 are the average power consumption and switching delay. Estimates made
with consideration of future improvements in techniques for making I2L
micrcacircuits give a minimum limiting value Amin =(10-16-10-17) J[Ref. 1].
The best values of A that have been achieved up to the present for individual
I2L circuits are (2-5)�10"14 J[Ref. 1, 2j.
However, the practical values of the switching factor realized in in~ection
digital microcircuits under actual working conditions are considerably
higher (by a factor of 5-10) since the limiting estimates and experimental
data cited above were obtained at rather Zow supply voltages (E = 0.15 V in
Ref. 1, E= 0.8 V in the experimenta.l tests of Ref. 2). As shown in Ref. 3,
to ensure adequately stable operation of in~ection microcircuits it is
nece~sary to use a supply voltage E Un.~in " 5 V� By~ changing
; " resistance R(for instance by commutation of the
�r ~ external leads) we can regulate the supply current In
~~R" R"~ ~ of the in~ection ISI chips, providif~g the required
_ speed [Ref. 1, 7~. By adding resistor Rn We can
~ p make the necessary change in supply current, and
- +l� In~ hence in the speed of the eeparate stages of the
in~ection ISI chips. The permissible number of LSI
stages in this case is k=(E~in ' Un.min~~Ui.max� For
Fig. 2 typical values: r,~n = 4.5 V, Un.min = 5 V, ,
Ui.m~ =1.0 V, we get k= 4. ~ ~
. ~
Thus in the case of series connection of in~ectors when transistoz� current
sources are used the loss factor KSt decreases by a factor of k, 2�eaching
Kst a 1.2. As Q result, switching factors close to the limiting values [Ref. .
1, 2~ can be actuElly realized in digit al systems.
Active-paasive suppty mods. When this method is us~d, the supply currents
o: the in~ection LSI chips vary during operation of the digital system from
zero to ~ome limiting vulue In. Thus a power savings is realized by
3
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diaconnecting dev3ces f'rom ~he supply that are not involved in date, processing
at ttte given inatant, and ~peed is increased by f~ed3ng the maximum current
Zn to dev3ces that are involved in data processing [Ref. 6].
'I'he s~ructure of a digital aystem with active-passive supply mode is shown
in Fig~ 3. Construction of the system requires controllable current aources. -
~
1 Maaucm ane gaNHe~x
atucm ne KOMQN ~
KEY: 1--Data mainl,ine
f 2--Command mainline
' l 4 yBB ~ ylfD 3--Supply control circuit
9~= i I 4-� I/0 device
vy ` _ J S--LSI chip
_ tl ~ w y,~
1~
~ ~~s NC , 5 6NC
Fig. 3
The sources must have high speed for switching current In to avoid reducing
tne speed of the system. Control of the current sources is accomplished by a
special microcircuit that analyzes fncoming commands and feeds energizing
= signals to the current supply sources of the devices that are taking part
. in execution of these commands. Several levels of current supply are
possible for executing commands of different prior3ties.
In order to prevent t:ar operation of supply activation from deleying the
solution of a proble~a, the control device cai: analyze two successive
commanda simult::.::~~;~ly so as to pre-energize the supply for the devices
_ r~quired in executing the next command.
7'he controlling microcircuit may b~ an appropriately programmed permanent
memory, or a special supply-~~ontrol microprocessor that will handle real-time ~
redistribution of the supply current to the devices in the digital system
in acc~rdance with the p.roblem being solved.
SincP only some of the circuits (usv~lly no more than 10~) are simultaneously
invo~ved in de,ta processing in digital systems, the use of the active-passive
supply mode in pr:nciple can give a switching factor for logic circuits that
is less than the limiting value given in Ref. 1, 2 by a factor of 1/p, where
p is the average percen~age of circuits involved in processing at each `
instant.
CONCLUSION
A further reduction in the switching factor of digital microcircuits based on -
I2L requires not only continued improvement of manufacturing techniques, but
4
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_ a.l~o the ~olution of circui~ d~sign probl.ems for optimwn power eupply orga-
nizai;ion. This means that research ia needed in the following areas:
~tiyit-quaZity stable current suppZies, including sources with short on-of.f
t i~ne ;
hi~h-speed I/0 mticrocireuits that can be used in staged energizing of
in~ection LSI chips;
miaroQireuits for suppZr~. con~roZ deviQes.
~ Uevelopment of the appropriate current supplies and I/0 microcircuits
will permit n reduction even on the preGent stage by a factor of four in the
power con3umption and accordingly in the switching factor of digital systems -
bnsed ot~ iri;Jection mi.crocircuits.
Realizc~tion of the active-passive supply mode will enable a reduction in the
average switchin~, factor for many types of digital systems by another -
order of ma~nitude or mor~. To accomplish this, it is necessary first to
solve problems of structural organization of digital systems with active-
passive supply mode, to define the class of prorlems where the use of such
a mode is most effective, and also to develop the corresponding software
for these systems. The use of this circuit-desi~n technique for reducing
the switching factor is promising not only for I L microcircuits, but also -
for other types of bipolar microcircuits. In this connection, the digit al
systems that utilize microcircuits based on bipoZar transistors have power
. consumption approaching that of systems on complementaxy MDS transistors
while retaining a considerable advantage in speed.
REFERENCES
1. N. A. Avayev, V. N. Dulin, Yu. Ye. Naumov, "Bol'shiye integral'nyye
_ skhemy s inzhektsionnym pitaniyem" [In,jection Coupled LSI Chips],
Moscow, Sovetskoye radio, 1977�
2. V.:ilatt ~ F. S. W~.7.sh ~ L. W. i~ennedy, "Substrate Fed Logic IEEE ~ SC-10 ~
No 5, 1975, P 336.
3. I. I. Shagurin, "Particulars of Designing ^igital Devices Based on I2L,"
MIKRGPLEKTR~NIKA, Vol 7, No 3, 1978.
1E . Frer~ch I'ntent No 2,275,028, class HO1L 27/06.
K. Krineko, T. Okabe, M. Nagata, "Stacked I~L Circuit," ELECTRON LETT.,
Vol 12, No 10, 1976, p 2~+9.
- 5
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!
G. :L. :C. ~hFapurin, "Circuitry Principle3, ~lement 9ase and l'articular~ of -
Desi~;nin~, Di~it~.l L~~ Chips and Super-L5T Chips on ~3ipol.~r Transistor3,"
M~KRO~L~K'I'F20NIKA, vo1. 7, No 2, 1978, p 99 �
COPYRIG~IT: "Izvestiya vuzov SSSR - Radioelektronika", 1978
G6io
Cso: 8144/Q$88 _
1
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~L~CTRnNIC~ AND ELECTRTCAL LNGINEERING
tm c 62i.382
T2L QUASISTATIC MEMORY CELL
Kiev IZVESTIYA VUZOV: RADIOELEKTRONIKA in Russian Vol 21, No 12, 1978
PP ~+1-46
[Article by V. V. Barinov] _
[Text] An examination is made of the particulaxs of oper-� '
ation of an in~ection-coupled quasistatic memory element
containing two p-n-p and two n-p-n transistors. The axea
occupied by the memory cell is 260G um2, recording time is
20 ns, and readout time is 10-20 ns. The results of machine
calculation and experimentsl research confirm the workability
and high energy characteristics of the memory cell.
Modern advances in development of bipolar circuits with kbit dynamic '
storagP capacity [Ref. 1-2] or even more [Ref. 3] are due primarily to the
developmer~t of a variety of inemory cells (MCs) wi~th in~ection logic. At
the pres~:nt time in~ection MCs have been used as the basis for botr~ static
[Ref. 4] ~nd dynamic [Ref. 51 int egrated semiconductor storage circuit chips
(ISSCCs). However, in the latter case [Ref. 5~ the c~ynamic MC has only a
- formal, outward appearance of the in,jection structure, and only in recording
the lo~;ical "1" does it operate in the state characteristic of in~ection -
circuits. A disadvantage of dynamic ISSCCs is the n;;cessity for recon-
structing (regenerating) information after definite time intervals that
vary with ambient temperature. The known static in~ection MCs contain at.
least ~ix transistors. Therefore a further increase in the information
capacity of static ISSCCs is possible only by improving technology or by
modifying conventional MCs. -
This paper examines an in,jection MC that contains only four transistors _
with combined diffusion regions. In all modes of operation except readout,
the described MC is a static unit. Destructive readout is possible; however,
with limitation of the duration of the readout operation, information is
~ self-restoring.
7
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WORKIN(; ~RINCIPL~S OF TH~ MEMbRY CELL
The in~ection flip-flop on which a11 static MCS ar~ '~ased requires f~our
transistor~: two ~-n-~ and two n-p-n. If the emit�~,~:c~s of current-s~ett3ng
p-n-p trans3ators are split, the f7.ip-flop can be uaed for h.t~h-~peed data
recordin~ [Ref. 6]. It turns out that current-setting p-n-p trr~nsistors
are also convenient for use in data res.dout. The electric circuit of an
in~ection MC of this type is shown in Fig: 1.
2 1 ~3 T4 A2 ~
- r,~ T4
Tl T2 Tl T7
PO C1 ~'~2 P1 PO C1 C2 P1
, Af a Al b
Fig. 1
Data storage. In this mode, approximately equal currents flow in bit 'ines
- FO and P1 (Fig. la) so that one of the transistors T1 or T2 (say T1) is
ener~:'~ed and saturated. Then the sec~~nd transistor (T2) is switched off.
In practice, when equal potentials Up are set on the bit lines of the MC in
the storage mode,..the flip-flop will have two stable states if in the
_ equivalent circuit of the in~ection transistor [Ref. 7] IAH >0, IA3 > 0.
This condition is met when -
ocN > -2- .
~ Capacities C1 and C2, which ar~ principally the barrier capacitances of the
emitter ,junetions of transistors T1 and T2, have different charges:
Ql � ClUs6 eu~ Q3'- C1Uw e~e~
Here U36 Hac+ UKa Hac are the emitter-base and collector-emitter voltages -
, of the saturated transistor. The charg~ ratio -
~Gi ~ C~ U~6 Mae -
~ Qs Ca UK9 Rat
. in practice with consideration of the voltage dependence of capacit ances _
- C1 and C2 is 10-20.
Recording. To energize transistor T2, it is first neces~~ary to switch oFf
transistor Tl. This is accomplished by the collector cui�rent of T1 flowing
through transistor T3. The current in line P1 at this ti.me is low ~r
nonexistent. Transistor T1 ~oes out of saturation, and the potential in
- node 2 increases. Then transistor T2 is put into saturation by the base
current. -
8 '
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' ~eadouC~ mh~ informati~n nipnal during r~adnut ig prov3ded by the magni~ude
und dircction o� ttie cui~rent in the bit lineg, which ar~ due to the sta~~
of th~ MC, In th~ stora.~e mod~, chargeg Q1 and ~z differ consider~bly. Tf
tran~i~tor 1'1 in ~n~r~rixed, the co:llector ,junction of transistor m4 in binsecl
in thc fnrward dir~ctiott, while the collector ~unc~ion of tr~.ngistor m3 h~g
~~r~ctically ~~r~ bi~q. When the ~upply i~ awitched off (the ~mitter ,~unetiong
or m3 and 'I'4 have rever:se or zero biaaing), capacitanceg C1 and C2 begin ~o
- rcchnrg~. Capacitance C1 wi11 discharge throu~h the fnrward-biased p-n
~unction~; the emitter ,junetion of transietor T1 and the eol7.ector ~unction
of transistor T4, which ~3re combined in the chip atructure. Beside~,
capncit~nce C2 wi11 be charged through the collector ~unetion of ml.
A eurrent due to chnrge 4~~ wi11 flow through inversely connected tran~istor
'r4 in bit 13ne P1. ~'or the ahort times of the readout stage, the change -
in rendnut current can be approximately evaluated by the formula
le~aaaf C~~
t '
Where a~' i~ the inverse current transfer coefficient of the p-n-p transistor,
u i~ ~ome quantity tt;at is con~tant fdx the MC and depends on the transfer
coef'ficient~ and current~ of t;he diode3 in the in~ection structure moflel
[Ref. 7j. `ifiere i~ hrnctically no curren+, in bit line P0. 7'hi~ difference
in current~ i~ utilized to identify the state of the MC and to determine the
code of the stored information. -
An wt11 be sl~own below, readout nf u~ to 100 ns duration does not lead to a
chan~r,e in the stnte of the flip-f1op. Such a time segment is completely
:~ufficient to ensure workability of the readout circuits and the entire
ISSCC in the dynamic readout mode. With transition to the storage mode,
equal currents are set in the emitters of transistors T3 and T4, the memory
cell is returned to the initial state since the voltage (and charge) on
cap~cita.nce C1 is still greater than the voltage (and~charge) on capacitance
C2. Transistor T1 goes into saturation, blocking transistor `~2.
Shown in Fig. 1 ure diagrams of the in,~ection (a) and modified (b) quasistatic
, memory cclls. A di~tinctive feature of the modified quasistatic MC is that
the p-ri-p transistors are mude in a pocket fnaulated from the n-p-n tran-
~istor~ (FiK. lb). The base potenti~l of transistors T3 and T4 can be
controlle~l by line A2, which i~ more convenient for the reudout mode than
witt~ ti?e In,~ection MC (Fig. la). HoWever, let us note that the area of the
1.~?ttcr i:; much smuller.
AKALY:II~ OF' TH~ READOUT MODE
'I'tic I.ime con~tant of cli:~char~re of' the capacitance through the p-n ~unetion
i:s >eed of the MC during readout is
, 10-20 ns, and during recording 20-30 ns.
REFERENCE;S
1. L. Altman, "i'review of I~SCC ~xcites Designers," ELECTRONICS, Vo1 45,
No 26, 1975, P 50�
2. W. i3. Sander, J. M. Early, "A 496x1. I3L Bipolar Ilynamic RAM," I~;EE _
ISSCC Dig. 2'echn. Pap., ~g76, p 182.
3. L. Altman, "Five Technologfes Squeezing more Performance from LSI Chi~s,"
EI.~CTRONICS, Vo] 51, No 17, 19'i7, p 91.
_ 4. L. Altman, "It's a User's Paradise," ELECTROI~JICS, Vol 51, No 2, 1977,
p 81.
5. W. B. Sander et al., "In~ection Logic Boosts Bipolar Performance While
Dropping Cost," ELECTRONICS, Vol 51, No 17, 19T7, p 107.
6. S. K. Wie:'~nann, "In,~ection-Coupled Memory: A High Density Static
Bipolar Memory," IEEE, SC-8, No 5, 1973, p 332.
7. 'V. V. narinov, V. Ya. Kontarev, V. I. Moshkin, A. A. Orlikovskiy,
"In~)ection Coupled Integrated Logic and Memory Circuits" in "Mikro-
elementy i poluprovodnikovyye pribory" [Microelements and Semiconductor
llevicc::~, Mo~cow, Sovetskoye radio, No 1, ~976, p 108.
8. EI. H. HEnn, "Bipolar Dynemic Memory Cell," IEEE, SC-6, No 5, 1971, p 297.
9. V. V. E~arinov, V. Ya. Kr~mlev, V. I. Moshkin, A. A. Orlikovskiy,
"In,)ection Coupled Integrated Circuits," ZARUBEZHNAYA ELEKTRONNAYA
TL:IQINtIU1, Central Scientific Research Institute of Electronics, No 9,
19"l3, P 3.
10. "Spravochnik ~o konstruirovaniyu EVM" (Handbook on Computer Design],
edited by S. A. Mayorov, Moscow, Sovetskoye radio, 1975�
COPYIZI(:ltm: Izvestiya vuaov SSSR - Radioelektronika, 1978
6G1U
~ C~O: f~144 /0885
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ELECTRONxCS AND ~LECTRICAL ~NGINEERING
t~C 62i,391.2
~ THE RELATION3HIP BETWE'EN 3EA WAVE SPECTRA AND TH~ SPECTRAL AND CORRELA-
TION CHARACTERtSTICB OF A REFLECTED RADIO SIGNAL
Mnscow RADIOTEI4INIKA I ELEKTRONIKA in Rusaian Ko 12, Dec 78 pp 2511-?518
~Article by A. A. ~arnaker'yan~ signed to presa 21 Mar 7~
~ex] Within the framework of Kirchhoff's theory it has been shown
that in the sh+~rtwave spectrum for small viexing angles and wide antenna
radiation pattc~rns~ a normalized~ three-dimensional~ correlation function
of the reflected signal at small Rayleigh variables coincides xith a
. normalized~ th.cee-dimensional~ correlation function of the sea surface.
The relationahlp has been established betxeen the frequency apec trum of
sea waves and the envelope spectrum of a reflected shortwave signal~
originally beamed from the air.
~e results are presented of experiments to determine by aeria.~ radar the
frequency spectrum of sea waves and the angular distxibution function
of xave energy. ZYie experimental results correspond xell xi.th the derived
data and demonstrate the possibility of determining sea xave sp~ectra
by aerial .radar with adequate precision.
Introduction
An important national economic and scientific problem today is the
development of telemetric methods to measure sea wave parameters. A
two-dimensional spect~um S.(c~� a) best describes sea wave phenomena.
The analytic expression for the t~ro-dimensional spectrum is usually
written as the product ~i]
S.(~~,, a) ~S,(w�)~(a)~
~i,
' Hhere S, ~ S. (u~.~ a) da is the frequency spectrum i~(cc) -the angular
distribution function of wa.ve energy:
14
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t
FOR OFFICIA~ USE ONLY
,(2) cp(a)~plcos"al; - 2 Ca` Z;
p-normaliz~.ng multiplieri
y 1 r( 2 +1, ,
(3) p ~ .
_ coe" a yn I' r n 21 ~
~
I'(z) -gamma funotion~ n depends on the intensity and oharacter of aea
xave phenomena.
We xill examin~ the posaibility of determining aerially a sea xave
spectrum through the speotral and correlation charaateristics of a
shortwave radio signal. ~
1. The relationship betrreen the three-dimenaional correlation tl~ination �
of a reflected signal and the three-dimenaional correlation funation of
the sea aurface
The problem of a three-dimenaional correlation of a electxomagnetic field ,
after pa8sage through a chaotic nonhon?ogeneous deflector has been
examined in ~2].
References used the perturbation methtid to solve the problem of
three-dimensional correlation ratios for sound and elect~onmagnetic xave
reflection from a statisticall,y rough surface tiri.th large and amall
irregulaxities~ when the xave phenomena xere emitted from a point source.
To amplify and develop tho results obtained in ~-4J in solving the
opposite pmblem of scattering~ which consista of determining the
correlation f~nction of a surface accoriiing to the three-dimensional
correlation function of a reflected wave~ xe xill consider the xidth
of the radiation pattern of actual emitters~ the three-dimensionaL{ ty
and anisotropy of the sea surface.
F~om point A(U, U, z.) (Fig~ 1~{~e � S~~e is exposed to a monochromatic
electromagnetic wa.ve. For vieiring angles close to mrmal (~-F~exp(-y'(1-x) J>X
X