JPRS ID: 9325 USSR REPORT ELECTRONICS AND ELECTRICAL ENGINEERING

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• Collection: JPRS
• Document Number (FOIA) /ESDN (CREST): CIA-RDP82-00850R000300040005-9
• Release Decision: RIF
• Original Classification: U
• Document Page Count: 20
• Document Creation Date: November 1, 2016
• Sequence Number: 5
• Content Type: REPORTS

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2 OCTOBER 1980
' EL
(FOUO 15/80)
u
I OF JL
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JPRS L/9325
2 October 1980
USSR Report ~
ELECTRONICS AND ELECTRICAL ENGINEERING
(FOUO 15/80)
FBI$ FOREIGN Q� OAVCAST IIVFORMATlON SERVICE
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JPRS L/9325
2 October 1980
USSR REPORT
ELECTRONICS ANL ELECTRICAL ENGINEERING
(FOUO 15/80)
CONTENTS
COMA2tJNICATIONS, COMMUNICATION EQUIPMENT, RECEIVERS AND
TRANSMITTERS, NETWORKS, RADIO PHYSICS, DATA TRANSMISSION
AND PROCESSING, INFORMATION THEORY
Line Distribution Bay SLK-2 Described 1
Supply Feeder Bay SPF-2 Described 4
MICROELECTRONICS
,
Special Characteriatics of the Manufactnring Technology of
BIS for the Hardware of the 4.SPI Complex 7
RADARS, RADIONAVIGATION AIDS, DIRECTION FINDI:iG, GYKOS
Determination of Conditions for F.ooo?.ute Stability of a Rad3r
Tracking System 11
' a- [III - USSR - 21E S&T FOUO]
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COMMUNICATIONS, COMMUNICATION EQUIPMENT, RECEIVERS AND
TR�.NSMITTEFS, NETWORKS, RADIO PHYSICS, DATA TRANSMISSION
AND PROCESSING, INFORMATION THEORY
LINE DISTRIBUTION BAY SLR-2 DESCF.IBED
Moscow ELEK'i'ROSVYAZ' in Russian No 5, 1980 p 59
[Article by A. L. Prasolov and S. M. Vorob'yeva]
[Text] The line distribution bay SLK-2 is intended for operational switch-
ing between a line distribution frame and the Central Wire Broadcasting
Station, as well as for measuring connecting lines and checking the condi-
tion of the cells of supply feeder bays (SPF-2) and output switching and
control bays (SVRU). SLR.2 bay is a modernized version of the SLK-1 bay.
It has a cell connectian circuit, a buflt-in resiatance indicator, and a
wider measuring range for flow-around currenta in connecting lines.
The bay is designed as a standard cabinet without a framework. The wiring
" of the bay is accessible from the back side through a two-leaf door and
through a protective panel in front. The front side of the bay has: a awitch-
ing field consisting of duodecal jack fxames; R set of monitoring and test-
ing elements consisting of one ce11 for controlling and monitoring traneform-
er aubstations intended for checking remote control by the switching equip-
ment of supply feeders, one cell for controlling and monitoring repeater sub-
stationa intended for checking the telecontrol system with the instrument.s
on the units and the control panel which containe a flow-around current it:-
dicator and a resistance indicator, a pullout table for placing measuring in-
1 struments and recording, and a removable table for telephone seta.
All connecting lines enter the bay from bel.ow, are soldered to the framea
with pins located on the back side, and then each line is connected with the
framea with pins installed on the front side of the bay under the protective
panel through parallel and break jacka. All types of communication are done
through cords with three-wire pluga.
Specifications. Bay capacity: 640 connecting lines; 20 intermediate switch-
ing lines; 10 jacks for telephone communication; 20 two-wire shielded ,jacks
for connecting various loads and signaling.
The bay makea it possible to measure loop resistance, insulation resistance,
and resistance between each wire of the connecting line and the ground. The
resistance measuring range is 0-1 kOhm, 0-10 kOhms, 0-1 MOhm. Provisions
1
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are made for monitoring the flow-around current in each wire of any connect-
ing line within the limits of minus 10 ; plus 10 mA and minus 50 plus
50 mA. Crosstalk attenuation between any connecting lines of the bay is not
less than 85 dB.
_.2
� The bay has two compartments for control cells, which makes it possible to
perform selective checking of the control systems of the equipment of re-
peater stations and transformer subatations and to replace and check the
control cells.
The control and monitoring cells draw current from; direct-current sources
with positive ground (60 V�10%, 24 V�10%); with negative ground (60 V�10%);
from a dicect-current source insulated frtoni the ground (60 V�10%; from a
, puisating voltage source with positive ground (24 V�10%).
2
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The resistance indicator i.s operated from a direct current source of 60 V+
10% insulated from the ground. -
The current consumption of the resiatance indicator does not exceed 450 mA.
Bay dimensiona: 2020 X 650 X 400 mm. W2ight 200 kg.
Operating conditions: ambient air temperature from +10 to -~1+0 degrees C:
relative humidity up to 80% at 25 degrees C.
Designed by the Centr.al Design Office of the USSZ'. Miniatry of Communication
and the Moscow Municipal Wire Broadcasting Network.
COPYRIGHT: Izdatel'stvo "Svyaz "Elektrosvyaz", 1980
[281-10,233]
10,233
CSO: 1860
3
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SUPPLY FEEDER BAY SPF-2 DESCRIBED
Moscow ELEKTROSVYAZ' in Russian No 5, 1980 p 60
[Article by I. L. G olubeva and S. M. Vorob'yeva]
[Text] The supply feeder bay SPF-2 ia a part of the complex of the special
purpose equipment of the Central Wire Broadcasting Station (TsSPV) of Moscow
and is intended for distance control of the main-line (working and stAndby)
feeders through which the voltage of broadcasting programs is delivered to
transformer substations (TP), for monitoring their condition, as well as for
receiving backward sound monitoring signals from the TP buses,
The SPF'-2 was developed on the basis of modern elements to replace the SPF-1
bays operating at the present time.
The actuators of the SPF-2 bay are electronic relays designed as a circuit
of triggers with additional symmetry using transistors of different conduc-
tance. The use of electronic relays increases considerably the aensitivity
and reliability of the equipment and reduces the time of preventive main- -
tenance and tuning of the equipment.
_ Each wire of the line of supply feeder control (UPF) is assigned to one of
the supply feeders of a given TP. The awitching of the feeder from the wnrk-
ing state to the standby state and vice versa is accomplished by sending a
short-duration voltage of -60 V to the appropriate wire of the UPF line; the
monitoring of the condition of the feeder is accompliahed by passing a direct
current of 60 V around the appropriate wire of the UPF line differing in
its value in the "work" state and "standby".
The bay is designed as a welded cabinet. It has the following: a signaling
panel intendQd for sending supply voltages to the cells and signaling fail-
ures of aupply voltages; the panel has control and signaling devicas common
for the entire bay and fusea; 60 draw-out control and monitoring cells of
the transformer substations, the cells are removable; a Fanel with interme-
diate switching jacks is located under the ce11s.
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~
Four rotary panels of the relay for aelective control and monitoring of TP
fram the panel of the operator on duty are located on the front and back
sides of the lower part of the bay. The lower part of the bay contains also
lead-in combs and supply blocka'covered~ by jackets.
Specifications. The bay is intended for controlling 60 TP and aerves the
following purposes: remore switching of TP supply from one supply feeder to
another; reception and decoding of signals regarding the atate of the supply
_ feeders ("operation", "standby", "failure"); reception of backward aound
monitoring aignals from each TP; awitching the backward monitoring voltage -
to the technical control atation by command from it; selective TP monitor-
ing and control from the panel of the TsSPV operator on duty; tr$pemistion
of the "on" and "off" commanda of the fire alarm aignaling system to TP; the
possibility of tranemitting commands from the technical monitoring equipment
to TP without disturbing the�'*fgAiing regarding the state of the supply
feeders.
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Monitoring and control are accomplished via one connecting line between
TsSPV and each TP. The resistance of each wire must not exceed three kilo-
ohms. Crossover interference between any lines ia not less than 85 dB
in the frequency range of 50-10,000 Hz.
The bay is operated from a direct current source of -24 V+10%; +60 V+10%;
-60 V+107o; -24 V pulsed. -
Bay dimensions: 533 X 400 X 2000 mm, Weight 200 kg.
The bay is installed for operation at the `tsSPV at a temperature of +10 to
+40 degrees C and a relative humidity of up to 80% at a temperature of +25
degrees C.
Designed by the Central Design Office of thiB USSR Ministry of Communications
and the Moscaw Municipal Wire Broadcasr.ing 1letwork,
COPYRIGHT: Izdatel'stvo "Svyaz "Elektrosvyaz", 1980
[281-10,233]
10 , 233
- CSO: 1860
6
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MICROELECTRONICS
UDC 621.375.147.2:681.327.22
SPECIAL CAARACTERISTICS OF THE MANIIFACTURING TLCANOLOGY OF BIS FOR THE AARD-
WARE OF THE ASPI COMPLEX
Moacow PRIBORY I SISTEMY UPRAVLE1JIyA in Russian No 5, 1980 pp 40-41
[Article by Candidates of Technical Sciencea P. D. Tokarev and L. M. Khokhlov]
[Text] The low cost of the element base is the most important requirement
for auch masa-produced computing systems as electronic keyboard cash regie-
ters, billing and accounting machines and consolQ-tqpe data recorders com-
bined into an integrated data collection and processing complex (ASPI [auto-
mated primary information processing syatem]). Due to a relatively low apeed
of the equipment of the ASPI complex, which is detenained, chief ly, by the
input time of the conditiona and programa for solving problems, the design-
ing of such equipment was done until recently with a wide uae of universal
integrated circuite (IS) ueing high-threshold IrIDp [metal-insulator-aemicon-
ductor] transistors (series R162 and R172; R501; R14f, respectively, of low,
medium, and high degrees of integration). However, it became clear that fur-
ther improvement of economic indicators of the mass equipment of the ASPI
complex can be achieved only by combining the developmeat of this equipment
with the creation o� apecialized functional1y ca,-aplete assemblies which are
equivalent in their designs to large-scale integrated circuita (BIS) having
as many as 1000 and more logical gates per case. By uaing them together with
universal IS, it is posaible to enaure the production of a wide range of hard-
ware for the ASPI complex with a relatively small list of specialized aesem-
blies.
There are two ways to solve this problem: either by the method of microasaem-
blies (MS) with the use of caseless active elements on the basis of the above-
mentioned IS aeriea, or on the basis of BIS manufactured completely accord-
ing to the aemiconductor MIDP technology.
The advantage of MS is the relative eimplicity of their designing which
amounts, chiefly, to the compilation of a circuit diagram and development of
a filmy subatrate mounting plate on the basis of the designing principles of
two-sided printed-circuit carda. The equipment for producing MS consieta,
chiefly, of three devicea: a vacuum spraying unit, a unit for thermocompres-
aion or liltrasonic welding of L-he terminals of caseleas IS, and a unit for
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sealing the cases. At the same time, the labor input in the manufacturing
of MS is equal to the labor input in mounting encased IS on printed plates,
and their repairability is cansiderably lower. For this reason MS yieiding
a real gain only with respe ct to the sive end weight characteristics of
the products and not with respect to their cost did not find application in ~
mass-produced equipment.
Semiconductor technology �or the organization of series production of spe-
cialized BIS requires high initial capital investments amounting to many mil-
lions of rubles, development of complex tec.hnological processes precision
photolithography, thermodiffusion, etc, as well as methods of design auto-
mation without which the development of complex BIS is practically impos-
sible. HowPVer, all initial expenditures are justified by the great gains
in the characteristics of the final product.
Calculations and practi.cal expprience confirm that the use of specialized
MIDP-BIS makes it possible to reduce greatly the dimensions, weight, labor
input in the production, and costs of mass-produced hardware of the ASPI com-
plex and improve its reliability at the same time. This determined the se-
lection of the NIDP technology for the manufacturing of the specialized eIe-
ment base for the mass production of the ASPI complex. Let us examine the
special characteristics of the technology of specialized BIS in comparison
with the technology of the production of IS series which formerly served a;
a basis in designing hardware for the ASPI complex and the ways of their re-
alization.
Basic Character. Specialized BIS of all types must be manufactured accord-
ing to the same operational documentation; exceptions can be caused only by
differences in the number of external terminals of the cases and electrical
control programs. The technology can allow for further development without
affecting the compatibility of the production of BIS of new and earlier types.
In order to realize the basic cFaracter of the technology, a number of dimen-
sional and electrical parameters of IrIDP-BIS elements were developed and check-
ed experimentally which included such characteristics as layer-by-layer di-
mensions of the windows and areas for creating the elements uf transistors
and connecting bars, technologi.cal allowances in making phototemplates and
structures on silicon plates, specif'c values of interelement capacities,
resistances of the layers, etc, as well as the permissible deviations of all
these parameters. This set of parameters was used in developing a system of
automated designing of BIS, due to which they are constructed on the same
element base, are designed according to identical rules, and must be manufac-
tured under the same condit iona.
Complexity of BIS. According to the performed evaluations, in order to en-
sure functional completeness of specialized BIS which would make it possible
to manage with a limited nomenclature of circui;.s for constructing a wide
class of machines, the latter had to have two-four times more transistors on
a ciystal than the most complicated BIS Qf the K145 series which were used
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previously in the equipment of the ASPI complex. Considering the fact that _
a considerable increase in the dimenaiana of crystals can lead to unjusti- -
fiably high cost of production, measures were developed and implemented which
~ doubled the denaity of the arrangement of transistors on cryatals in compari-
son with the above-mentioned BIS of the R145 series.
- Yhe simplicity of the technology which is understood as the construction of
the manufacturing process of BIS on the basis of the etudied technological
operations well asaimilated in the USSR whose reproduction bq a personnel
not having sufficient production akills would be possible in a short time
and with the equipment for which technological charts are compiled. In many
instances, when developing a technology, rough indexes of circuita were given
intentionally in order to lower the critical level of the technological pro-
cess to the requirements imposed on the quality of initial materials, media,
and the skills of the personnel, i.e., everything that always accompanies a
new production during the period of its development.
Availability of Materials. When a fundamentally new production ia created,
its supply agencies are inevitably faced with the problem of providing
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_ materials wl:ich the enterprise did not usE befor.e. Therefore, in develop-
ing the technology, attempts were made to reduce the list of materials, to
use only such brands and grades of materials which are being produced by the
_ USSR industry, and to eliminate the use of imported materials from the very
- beginning.
Compatibility of Production. This term is understood to mean a complete .
electrical compatibility with xespect to supply voltages, polarity, levels,
ar.d forms ot input and output signals of specialized BIS with the IS of the
above-mentioned 3e ries.
The technological process was based on a so-called standard high-threshold
- p-channel MU1' I met al-oxide-semiconductor] technology with four basic cycles
of photolithography, The minimum distance between the centers of any two
neighboring elements was taken to be equal to 25 microns, the minimum width
= of the line and local gap between the boundaries of the elements was six
microns, and the minimum size of the ttindow was 6 x 6 microns. These dimen-
sions correspond to a sufficiently high level of technology, however, thev
are still not too close to the limits imposed by the physical limitations or
potentislities of the equipment.
Special attention was given to the reproducibility of the values of the
thr.eshold voltages of active and parasitic MOP transistors, For this, con-
ditions of the chemical proceseir.g of the surfaces of silicone plates were
studied in detail and selected at various stages of the process. The wash-
ing of plates in complex-forming compounds was used widely. A method of
stabilizing the subgate oxide was deve Ioped thoroughly, including high-tem- -
perature annealing for gettering highly mob ile ions. A high degree of ohmic
resistance of t:he aluminum silicone contact hao been achieved, and the assem-
bly technology that was used ensures a very low value of the resistance of
the substrate terminal, which is important for reliable ope�ration of the cir��
cuits created on the basis of a dynamic four-cycle circuit technique with
pulsed supply voltage.
On the basis of the technology developed under the conditions of experimental
production, a numb er of specialized semiconductor assemblies with an integra-
tion within the limits of up to 4,000 transistors and crystal dimensions of
_ up to 25 tmn square have 'ueen created, manufactured, and introduced into se-
ries product ion .
The figure shows the topological structure of a logical arithmetic device on
a crystal of 4.4 x 3,7 mm with 1712 transistors.
COPYRIGHT: Izdatel'stvo "Mashinostroyeniye,""Pribory i sistemy upravleniya,"
1980
[279-10,233]
' 10,233
CSO: 1860
10 :
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RADARS, RADIONAVIGATION AIDS, DIRECTION FINDIhG, GYROS
UDC: 62-501.02
DETERMINATION OF CONDITIONS FOR ABSOLUTE STABILITY OF A RADAR TRACKING
SYSTEM
Leningrad IZVESTIYA WZOV SSSRt PRIBOROSTROYENIYE in Russian Vol 2331 No 631
1980 pp 23-28
[Article by L. B. Zor'yan, Leningrad Institute of Precision Mechanics and
flptics]
[Text] Asymptotic stability of a radar tracking eystem
is examined. Maximum angle of inclination of nonlineari-
ty of a direct ion- finding device ia determined, whereby
the system is absolutely stable. .
The p roblem of determining the absolute reliability of automatic coatrol
systems has been fairly widely investigated both on the basis of the
Lyapunov direct method and with utilization of frequency criteria. Absolute
stability of equilibrium position is defined as equilibrium position
asymptotic atability in the Lyapunov sense with any characteristics of a
nonlinear conoponent belonging to a specified claes.
r - - -i
~�!MJ/ e. 4 rn~_ 0/ oroir ~
L--4 - - - - - - -
~l B~ / , o I I
I
I I I NS/
~
9~too~! '1 ~ I
~ .
I 062
Structural Diagram of a Radar Tracicing Syetem
In this article we sha11 e$amine, on the basis of Lyapunov's direct method,
determination of the conditions of absolute atabilitq of a two-channel
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bearing automatic tracking (ASN) radar system with sequential signal com-
parison (coiiical scanning) [see Bibliography], which is typical for
angular tracking eystems w3.th amplitude-phase modulation.
_ A system structural diagram (see figure) has been. prepared for the en-
velope of a carrier wave, on which: �1, E2 tracking errors in the
azi.muth and clc~;;ation planes; A-- Fingular deflection of tracked r.arget
from eqsal-signal liearing (RSN); gl, 92 input disturbances describing
target movement; yl, y2 angular coordinates of RSN.
An important feature of this system is the fact that it is single-channel
up to phase detectors FD1, FD2. Amplitude (a) and phase (cp) of the signal
voltage at phasF� detector input carry information on the polar coordinates
of the target relative to RSN. Control voltagea u1=a coscP and u2=a sin ~
are applied to the two-channel actuating device (IU).
The drive transier functions applied to the IU have the form
U~i (P) s (P) K.
P 6 + bi P -Fbaljz)' .
Functional dependence a=F(0) in the range (O,oo) satisfies condition
0,C ee)
It is necessary to determine the maximum value 0 at which abaolute
stability in angle (0, p ) is observed.
_ The self-contained control system equations have the forn
(o)
KI F ~ El + E1 + CI�IE, + (12E] -0i
K: E~ E~ I71l~ i- (JqE~ = O, ( ~ I
2 2
8 = V S 1
d- `-'l.
We shall present system (1) in normal form, selecting as atate variables
XI=ei, X--=X~, X3=a''-, xc=ez, xs=X~, Xs=Xs.
Designating fihe coefficient of static linearization of nonlinear character-
istic F(A) by h(A), we finally obtain
\ -11X 1)(0, Xi, Xe),
'G = j/'Xi x'a, (2)
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where
a=
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10
i 0 0
0
0~
xl
0
0 1 0
0
0
'
0- c, - c, 0
0
0
j
A
'
0
0 0 0
]
0
'
xe
O
O 0 Q
O
1
0
0 0 0 ---Ca
-C4
0
0
d'(U, x,, =
- x,h (e) c,x,
,
O
0
I
- h',li (6) c,z4
1 a~
Cl = Q~ , C= a.
1
C3 = h2, C4 =
bi
b3 .
We shall write equations (2) in the form
X = C lhi(G) ] X
(2a)
,
U = x; f.. x,2
0 1 0 0 U 0
0 0 l 0 U p
C 1~ U ~ 1~,1r (A) c, - r, - c. (1 U 0
where 0 O 0 (1 1 fl
0 U 0 U 0 1
0 0 0--K:lc (8)c3 - c, c4
To examine the asymptotic stability as a whole of equilibrium poaition X=0
of system (2), we shall write Lyapunov's function in quadratic form
v(X)=X rQX,
where Q = IQ1 O 9ij !I (i, / 1, 3), Q: = 119j II (l, ! = 4, 5, 6)
_
9,j = 9j;�
Taking the time derivative of function V taking into account equation (2a),
we obtain V(a)=~-jQ\-}-X-j"QX=XT(Cf(h)(,1-f-QC(h))a.
We ahall designate C,. (h) Q+QC (h) --L) (3)
A
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then, without performing intermediate transformatione, the condition of
negative determinacy V(X) (positive determinacy of matrix L) reduces to
posi*ive determinacy of matrices
2 K 1r 1q73h
'
711 I 9i3
. .
.
qi: -F r_9~3 K 1 f h
1 q 3;1
q11 ~ r1713 + 'K1r192,,h
.

- 2q]_, 2f1723

` 7:] 4 f,1J73 - 913 4' rIq33
'
91: -r "2'I13 -I- Kl('193311

r,,173- 9,3 + r,n:s.3

- 9923 + 2,�:q3:
.
(4)
L2 _
2K-[3q4uh
- Q41 r3q1c i K2'345Rh
. .
945 .
r4446 -Kf~~9aeh
.
_
- I .944 r c3446
_ .
.
.
9,5 - 2C3?s6
. .
.

,

- 9a5 -i ~14:G- 946~' r39sa
,
~
~ q~ 't- C4~46 f1�r1qo~Ii
.

i~- t
� - ( IS 4956 - q46'~ r3966
.~l..............
-?56 -r 466 . .
(5)
We shall designate the principal minors of the obtained matrices with
II,,,., *v=1, w-1, 2, 3}, where v-- number of matrix, m-- order of minor.
Then on the basis of Sylvester's criterion, matriees L1 and L2 can be con-
sidered positively determined if the following equalities are fulfilled:
0,
inequalities (7) will assvme the form
h b.m (9.) ~ H.m ~9�). (10)
~ avnt (9r) ~
>0 (v= 1, 2,; n=2, 3). (11)
_ We shall determine elements of matrices Q ensuring u~ax H~(qv) (~1, 2;
m=2, 3) under the coadition of fulfillment of inequa~l~ity (11). Cal-
culating the maximum of fLmcticas H12, H22 and one of the points of the
extremum for H13 aad H23, taking (9) into account, we shall obtain the
following relations between elementa of matrix Q:
~ .
9ii = 2c= 9za~ 9~: ~ i 923r ~I13 7~~ 92a, 922 = CCz 2z ) q=5, 9:j = n_::~
s
q11 - C3 q'~ , ' Cl - (3 ~ r3 l 2
2
2c~ 9is - 95r, q.ir, - ~ 9sl:, Ct ~ qsj;j qre - 9:,F�
(1?)
Substituting (12) in (10) and (11), we obtain:
fi < N1z = H,s ~ ki~_ , h ` H:z = I-I:;, K=~, ' (13)
,
c.,2-2c1>0, c4=-2c,>0. (14)-
- Quantity r3 determines the maximum inclination of
P,~~,~a=min K1r2 , Ksr' ~
nonlinearity ensuring specific negativ-
ity of d(X) in angle (0, p max).
- We ahall check the poaitivity of matrices Q1 and Q2, for which we shall
write their principal minars of the second and third arders:
."s
~~i:~=~i(~~-C (C? 1,5c,).
s
' � ~
- IQ.�_ c; (fq l',). I nr., 1-- ,~~3 (c? ~ - 1,Sr;,).
As is evident from the obtained expressions, minors Q1 and 42 are also
positive in fulfilling conditions (14).
Thus for Lyapunov's function of type V(X)=XTQX those elements of matrix Q
- are determined which enaure a maximum for inclination
h(A) FA '
15
FOR OFFICIA,'., USE ONLY
APPROVED FOR RELEASE: 2007/02/08: CIA-RDP82-00850R000300040005-9

APPROVED FOR RELEASE: 2007/02148: CIA-RDP82-44850R000300044405-9
FOR OFFICIAL USE ONLY
whereby the system is absolutely stable at angle (o, (3 maX) (with
limitations (14) on system parameters). The obtained sufficient conditions
of absolute stability mdke it possible to synthesize a radar tracking sys-
tem which eneures lock-on when transitioning to automatic tracking.
In conclusion we should
note that conditions
(14) are fulfilled for a
broad class of aut
omatic
control systems:
p (1 -
- -
T'P~
sequential comLination of an
integrating and aperiodic el:e-
metit of the second order,
2 a? - 2a,
c2-2C1= =
T~~- T i
s
> 0;

T
T2
1 z
2) 11/ (
~p) -
- _
p(1 2CT p+ T21i2)
sequential combination of in-
tegrating and oscillating
-
element,
r~ -
2c T2 (a`- - 2) U
i ~
~
T4
when 0.71.
When condition (14) is not fulfilled, we can place in matrices L1 and L2
- -i722 -}-c1923 -913-i-ci933 =0, 9s.;-f-r49se--q,r-f-r,39cc=R.
Then Pmaa -
min!
) ~
,(C2-=- ?ll ) ~ 1