JPRS ID: 10605 WEST EUROPE REPORT SCIENCE AND TECHNOLOGY

• Document Type: CREST
• Collection: JPRS
• Document Number (FOIA) /ESDN (CREST): CIA-RDP82-00850R000500070051-3
• Release Decision: RIF
• Original Classification: U
• Document Page Count: 24
• Document Creation Date: November 1, 2016
• Sequence Number: 51
• Content Type: REPORTS

APPROVED F~R RELEASE: 2007/02/09: CIA-RDP82-00850R000500070051-3
FOR OFFICIAL USE OIVLY
JPRS U10605
22 JuNE 1982
West Euro e Re ort
p p
SCIEiNCE AND YECHNOLOGY
_ (FOUO 12/82) .
Fg~$ FOREIGN .BROADCAS~ INFORIVIATION ~~RVICE
~ ~ FOR OFFICIAL USE ONLY .
APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500070051-3

APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500074451-3
NOTE
JPRS publications contain information primarily from foreign
newspapers, periodicals and books, but also from news agency
transmissions and broadcasts. Materials from foreign-language
sources are translated; those from English-language sources
are transcribed or reprinted, with the original phras ing and
other characteristics retained.
Headlines, editorial reports, and material enclosed in brackets
[J are supplied by JPRS. Processing indicators such as [Textj
or [Excerpt] in the first line of each item, or following the
last line of a brief, indicate how the original information was
processed. Where no processing indicator is given, the infor-
mation was summarized or extracted.
Unfamiliar names rendered phonetically or trans].itera te~ are
enclosed in parentheses. Words or names preceded by a ques-
tion mark and enclosed in paren~heses were not clear in the
original but have been supplied as appropriate in context.
0*_her unattributed parenth etical notes within the body of an
_ item originate with the source. Times within items are as
given by source.
~'he contents of this publ ication in no way represent the poli-
c ies, views or at.titudes of the U.S. Government.
~
COPYRIGHT LAWS AND REGULATIONS GOVERNING OWNERSHIP OF
MATERIALS REPRODUCED HEREIN REQUIRE THAT DISSEMINATION
OF THIS PUBLICATION BE RESTRICTED FOR OFFICIAL USE ONLY.
APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500070051-3

APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500070051-3
FOR OFi ICIAL USE 01:~.Y
= JPRS L/10605
22 ~une 1982
WEST EUROPE REPORT
SCIENCE AND TECHNOLOGY
(FOUO 12/82 )
CONTENTS
ELECTRONICS .
French Aeronautical Industry Ueea, Produces Gate Arrays
(Gerard Collin; AIk ~ COSMOS, 3 Apr 82) 1
- RTC Introduces ~omplete Line of ECL Gate Arrays
(AIR ~ COSMOS, 3 Apr 82) 4
ENERGY
Rheinbraun Develops Fluidized-Bed Gasificat~on Procesees
(Hane Teggers, et al.; ERDOEL & KOHLE-ERDCAS-
PETROCHEMIEy Apr 82) 6
- TRANSPORTATION
_ A 310: First Perfor.mance Testa Promisbng
(AIR & COSMOS, 24 Apr 82) 13
Airhus: A 310 Tests, Production, Eqcipment
(AIR 6 COSMOS, 30 Apr 82) 15
ERRATUM: Saab-Fairchild-340 Project Enters Phase Thre~
(AIR & COSMOS, 3 Apr 82) 17
- Project Description, Schedu le, by Regia Noye
Cockpit, Avionics
- a - [ I I I-~- 151 S&T FOUO ]
APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500070051-3

APPROVED FOR RELEASE: 2447/02/09: CIA-RDP82-44850R444544474451-3
FOR OFFICIAL USE ONLY
~
ELECTRONICS
~
FRENCH AERONAUTICAL INDUSTRY USES, PRODUCES GATE ARRAYS
Paris AIR & COSMOS in French 3 Apr 82 pp 37, 38, 41
[Article by Gerard Collin: "The Vogue of Gate Arrays"]
[Excerpt] Seductive
Prediffused arrays seem iRdeed very attractive: they truly appear to be the
, approach of the future, le.qving the arena of apecific integrated circuits aolely to
universal components (such z.a microproceasors and memori~~s), and the few very large
production circuits. Prediffused circuits thus encroach both on cuatom and on
hybrids circuits; but they can also become specific components in hybrid
microelectronics, with which they are compatible.
It should therefore not be surprising that the components industry is wide open for
; gate-arrays. In France, Thomson-CSF, through EFCIS, has inetalled in St. Egreve,
near Grenoble, a unit to produce CMOS and bipolar gate-arrays, going as far as the
! characterization of circuits for the final user. Matra Harris, in Nantea, launched
; a family of CMOS gate-arrays with 400s 800, 1200, and saon, 2000 and 5000 gates in
1983. RTC as well, is launching a range of circuits (see p 41, this issue). Also
in the running, are Eurotechnique, SINTRA, SOREP, and others.
This general trend of the national components industry will be followed with
interest by equipment manufacturers.
- It should be added that until now, such circuit3 were available only abroad, and
mainly in the United States (in the Silicon Valley, of courael), an area in which a
French company, Atac Diffusion, subsidiary of the Elf Aquitaine group, has slready
established some roote.
Atac Diffusion
Today, Atac Diffusion consists of 17 peraons, and represents in France the Amer~ican
company Interdesign (which has itself become a subsidiary of Ferranti), which
, produces bipolar and CMOS gate-arrays. Atac Diffusion also representa Ferranti for
ULA digital bipolar gate-arrays. And finally, Atac Diffueion hae ~uet reached an
agreement with ZYMOS, a company which offers circuita presented as intermediates
between gate-arrays and custom circuita, based on catalogsl For Mr Creugny, of
i Atac, these circuits represent a r~ew etep in the f ield of integrated circuits,
1
, FOR OFFICIAL USE ONLY
APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500070051-3

APPROVED FOR RELEASE: 2007/02/49: CIA-RDP82-00850R040500070051-3
,
i~OR OFFICIAL USE ONLY
n
coming closer to full custom but retaining the flexibillty of gate-arraye. This
should prove, as if proof were needed, that gate- arsays are evolving. According to
Atac, the "catalog full custom" ta gra~,atically offeneive :.ame) is typically
50 percent larger in area than cuetom integrated circuits (and thus 50 percent more
expeneive in recurring coeta), but two to five times lesa expensive in developm~enC:
the lead time for delivery of the first circu its would be only two months according
to Atac! The computer *esources for moving f rom electrical cir~uit drawinge to the
design of interconnection m~sks are being developed at Atac, and should b~
operational by the end of May.
Atac already haE the means to personali~e gate-arrays, in the guise of Applicon CAD
(computer-aided deaign) equipment. But Atac is also very open to different typea of
coaperation with equipment manufacturers: from supplying bare ~ircuite to the
delivery of finished ones, and including the training of customer engineers in the
t~echniques of circuit personalization. Atac a?so expecte to eubcontract the
proc~uction of circuits in France.
~
Atac has already established contacte with several French aeronautics companies,
such as Sagem, Sfena, Daasault, Matra, Deutech, and Thomaon-CSF.
CAD
- One of the important features of gate-arrays is that their pe�-~eonaliz ation can be
performed by the equipmenti manufacturers themselvea. Indeed, the manufacturer can
work on the arrays in his own plant, thus siiw�.nating the n~ed to deal with a
- microelectronics company and maintaining full coatrol of his own comp onents. This
was the approach taken taken by Sagem, which today appeara to be one of the French
leaders in the use af gate-arrays, from circuit study to mass production.
Sagem has already instslled, in Argenteuil, conaiderable resources f or computer
proceseing of gate-arrays through all their stepa:
Translation of circuit diagrams by meane of CAD. At this point in ~~ie proceas, an
expexienced engineer has already a fairly good idea of the gate-array which will
ultimately be used~ This is followed by a computer simulation of the electronic
circuit's operation, which involves an electrical simulation (voltage and
temperature vuriationa), atatic and dynamic eimulations, and verification of testing
capabilit~es. In thie respect, Sagem hae already acquired extensive knowledge of,
or experience with the programs known among epecialists as DIANA, SPICE 1 and 2,
ASTEC, LOC CAP, TEGA V, and SAGDYN (the l.atter having bEen developed by Sagem
itself ) .
These programs are run on Sagem's computers, or at such firme as CISI or Con~rol
Data. At this level of the atudy, the engineers are practic lly sure of the choice
of the final gate-array.
The next step is the mask design. C3ven the selected gate-array, and therefore the
available grid, the interconncction circuit is designed to prepare the mask design.
Sagem is currently aiming for 70-75 percent rates, but higher ones are possible,
particularly with sequential logic circuits.
2
FOR OFFICIAL USE ONLY
APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500070051-3

APPROVED FOR RELEASE: 2007102/09: CIA-RDP82-00850R000500070051-3
FOR OFFICIAL USE ONLY
The circuit ia designed with interactive CAD (Applicon): the operator has access to
a cell catalog, a library which ia gradually enriched by the operator himself, who
eliminates inevitable interconnection conflicts (crossings) by such means as taking
~ ad:~~ntage of underpasses provided in the gate-array.
Beyond th~s CAD, Sagem expecta to install programs for automatic location and
routing.
Once the implantation hae been finalized, a timing analysis can alao be performed by
the computer, which in addition verifies that the rules of the art, sL:h as epacing
between connections, line widths, and so on, have b~en reapacted (design route
check).
The remainder of the proCess is no lese computerized: creating the magnetic tapes
which will control mask design (pattern generator) and the tape for automatically
testing the circu~.t, with definition of test programs and equipmentl
T~ top it all, we should add that Sagem is insta~ling meane for qualifying samples,
and for characterizing transistors and modelling their behaviorl
For productfon itself, Sagem is installing facilities for mask personalization,
primarily using, for the purpose, equipment and procedures already established for
thin-film hybrids. These means are of course intended to assure the produ~tion of
gate-arrays for Sagem's internal neede (aerospace, rockete, defense), but the
company ia already offering its know-how to outside cuetomers: the iead times for
availability of first tested sample~ are ehorter than three m~ntha (includin~ custom
delaysj. It should be noted that Sagem has already obtained circuits that were good
on the first try, with a eingle modification being the maximum required!
Sagem has thua created five new circuits in the last aix months; typical of the
gate-arrays that have already been f abricated for aero~autica are:
A frequency dividing chain for supplying gyroscopes and gyrometers;
Logic circuits for detecting and analyzing failurea in redundant systema;
An~i incremental accumu~ators for etrap-down components.
i COPYRIGHT: A..& C. 1982
~ 1,0?.3
CSO: 3102/220
' 3
, FOR OFFICIAL USE ONLY
APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500070051-3

APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500070051-3
FOR OFFICIAL USE ONLY
ELSCfRONICS
RTC INTRODUCES COMPLETE LINE OF ECL GATE AF~RAYS
Paris AIR & COSMOS in French 3 Apr 82 p 41
[Unsigned article]
[Text] RTC has introduc~d a complete line of ECL-tec~nology gate-arrays, called the
ACE (Advanced Customized ECL) famiiy.
:~CE arrays are characterized by their apeed (0.4 ne/gate); their factor of inerit
(1 pJ); and a computerized simplif ied design.
The line will include five ACE arrays th~t differ in the complexity of their logic:
- 600 (600 gates, 24 internal cells); 900 (900 gates, 36 internal cells); 1400
(140~ gat~s, 60 internal cells); 2200 (2200 gates, 100 internal cells); 1256
(1000 gates, 256 kAM memory points, and 48 internal cells).
ACE arrays are compatible with lOK and 100K ECL's, which then benefit from the sam~
perfoxmances. Moreover, 1K and 4K RAM memories are equally lOK or 100K-compatible
with the same performances.
Spee~i
For gates: propagation time is 0.35 ns for CML-technology internal gates, that is,
gates without power transistora, uae~ solely for ECL outputs;
For a flip-flop connected as divider, the input aigaal frequency is 400 MHz;
The rise or decay time of input and output gates is 0.75 ns. Thie epeed givea the
array a speed fully compati?~le with the 100K ECL.
Factor of M~rit
(Product of consumption ~imes speed, generally used to compare technologies with one
another)~ For ACE arrays, the conaumption per gate is 2-3 mW for a speed of
0.35 ns, which gives a factor of inerit of one pico~oule. As a comparison, and at
the other end of the performance acale, one can consider a CMOS LSI circuit w'~ose
consumption per gate is about 100 mW for a speed of 10 ns, which is also of the
order of 1 pJ.
4
FOR OFFICIAL US~ ONTY
APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500070051-3

APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500070051-3
FOR OFFICIAL USE ONLY
~ ACE arrays have the following consumptiona: 1.8 W for the ACE 600, 2.3 W for the
ACE 900, 3.5 W for the ACE 1400, 5 W for the ACE 2200, and 3.5 W for the ACE 1256.
The consumpt~.dn per gate is between 2 and 3 mW.
A standard 100R ECL circuit coneumea 40 mW per gat~. The consumption gsin f actor is
of the order of 20. '
Package
ACE 6C1a and ACE 900: 64 pins; ACE 1400, ACE 2200, and ACE 1256: 120 pins.
Availability dates: ACE 600 and ACE 900, available; ACE 1400, third quarter of
1982; ACE 2200, firet quarter of 1983; ACE 1256, second quarter of 1983.
RTC has f~~rmed an "expertise center," whose function is to train and later assist
customers during the whole design period, or to fulfill this function in their
stead. In 1981, this center trained several customere in the use of ECL and ISL
gate-arrays, in the areas of computers and telecommunications for civilian or
miLitary applications.
Improved design assistance toola (catalogs, deaign manuals, and so on) have been a
second aspect of the center's activitiea.
I~'inally, RTC has completed i~s line of gate-arrays with the introduction of a LOCMOS
700-gatie array.
COPYRIGHT: A. & C. 1982
' 11,023
CSO: 3102/220
5
FOR OFFICIAL USE ONLY
APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500070051-3

APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500070051-3
FOR OFFICIAL USE ONLY .
ENERGY
RHEINBRAUN DEYELOPS FLUIDIZED-SED GASIFTCATI~1 PROCESSES
Hamburg ERDOEL & KOHLE-ERDGAS~PETROCHEMIE in German Apr 82 pp 178-184
jArticle by Dr flans Teggers, Dr Rarl August TheStuett eo~regr2Sc~5~0, Cologne
Rheinische Braunkohlenwerke AG [Incorporated], g
41: "Syntbesis Gases and Synthetic Natural Gas from Brown Coal"]
[Excerpts] Rheinische Braunkohlemaerke AG (Rheinbraun~
. is developing two flu3dized--bed gasification procesaes
operating under pressure. Oa the one hand the Sigh-
Temperature-Winkler- (.HTT~i-~ Process for tfie generation of
CO and H2-rich Synthesis Gas and on the other hand the
Hydrogasification of Coal (HKV) to generate Substitute
Natural Gas (SNG). Building of commercial-scale plants
are proposed for 6oth procesaes. The first line of a HTW-
Demonstration plant in a commercial scale is acfieduled for
operation in 1984. The plant with finally deliver 1
billion m3/yr synthesis gas for inethanol production by
1987. The HRV-Demonstration plant of the same capacity is
schede~led for operation in about 1990.
1. Introduction
The generation of gases from coal for chemical syntheses and as energy source
has heen knoam already since tlue last century. During the 1960's, gas from
coal in the chemical industry sector was displaced by synthesis gag from heavy
oil, crude gasoline, or natural gas and from the energy sector by natural gas
for reasons of economy. Since the start of the 1970's gas generation from coal
has again been constantly assuming greater significance due to the constant
rise in the cost of crude oil and natural gas. This applies above all to coal
grades which are easy to mine and which have a high reaction capability, for
example, in the FRG, brown coal from the Rhineland. The Rhineland 6ro~n coal
plants folloaz a concept graduated in terms.of time and content which features
the development of two gasif~cation processes, that is to say, first of all
for the generation of synthesis gas and then for the generation of synthetic
natural gas.
Due to the high reaction capability and the fine-grained aspect connected with
the production process as sucfi, both cases point to the use of fluidized bed
methods. The development effort extende via the construction and operation of
6
FOR OFFICIAL USE ONLY
APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500070051-3

APPROVED FOR RELEASE: 2407/42/09: CIA-RDP82-40850R000500470051-3
FOR OFF[CIAL USE ONLY
experimental and pilot plants--for ~thnse promotion we would like to thank the
~ BMFT jFederal Ministry of Research. and Technology] at tfiis po~nt in this study
--all the way to demonstration plants.
; 2. Synthesis Gas from B.rown Coal: HI~ Methnd
2.1, npvelopment of High-Temperature-Winkler Method
' Union Rheinische Sraunkofilen Kraftstoff AG (UK .jditvfision] Wesseling), an af-
filiate of Rheiniscfie Sraunkoblenwerke, during tlie 1950's and 1960's operated
a synthssis gas generation faciltty.~rith two Winkler gasifiers each.witfi 17,000
m3 (~.N. [standard]~/fir crude gas capacity.
On the b.asis of these experiences~, this tecfinology was developed furtlier with
the ob~ective of improving tfie perfortaance data and the gas quality tfixough an
increase in thE pressure and the temperature. The higher temperature gave the
process the name HTW (High-Temperature Winkler) method. Here are tfie main
points in tfiis improvement:
Gasification under pressure to increase the speaific output and to reduce the
compression energy for the sui~sequent chemtcal syntfieses;
- Gasification at higher temperatures to improve the gas quality and to increase
the volume processed;
Increase in carbon processing rate through return of dust, expelled overhead
into the fluidized bed.
' The fundamentals of the method were developed in a technical testing facility
at the RWTH [Rhine-Westphalian Technical College] in Aachen. Tfiis plant is
still b~eing used for basic research to cfieck the applicability of tfie method
for various other types of coal and carbon sources. In tfie middle of 1978,
an HTW pilot plant was placed in operation on tfie grounds of the Frecfien
factory near Cologne. At this time, a demonstration plant for the generation
of inethanol synthesis gas on an industrial scale is being planned; its first
= line is to go into operation in 1984.
The HTW method furthermore can 6e used for the generation of:
I Reduction gas far metallurgical purposes,
Hydrogen as chemical raw~material and for fiydration purposes,
Lean gas for burning purposes.
4
i
7
FOR OFFICIAL USE ONLY
APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500070051-3

APPROVED FOR RELEASE: 2047/02/09: CIA-RDP82-00850R000504070051-3
FOR OFFICIAL USE ONLY
2.2. Description of HTW Experimental Plant
Here are the essential design data for the HTt~I experimental plant;
Coal processing rate Up to 1,300 kg/hr dry bro~rn coal
l:asification agent Oxygen/orater vapor or air
Gas production Up to 2, 200 m3 (i.N.? /Fir or 107 imiol/hr
Gasification pressure Up to 10 bar
Gasification temperature Up to 1,100� C
Completion 1978
Figure 1 show~ a simplified flo~r diagram for the experimental plant. The
charge coal for the plant is dry brown coal with 18 percent water content,
such as it ~s used for briquette production. The water content, dependtng on
the goal of the experiment, can be reduced further to 8-12 percent in a
twist-tube drier. '
The coal is brought to the reaction pressure of up to 10 bar by means of a
system of locks and is introduced into the fluidized bed gasifier via a worm
gear.
_ . : Z.~~... : -
? ~ 3 . : . . b
' 1 3 ~ }
3 5 13
. '
8 9 '
. a
~ ~ .
10
. }
~ �t
. ~ 11 .w~+��' 12 .
Figure 1. Flow diagram of ~T~il exper~mental plant. Key: 1~-Coal fiopper; '
2--~Secondary drying; 3--,Cyclone; 4~-Reactor; S--Waste heat li.oiler; 6--Water
washing; 7--Corrversion; 8--L~