SCIENTIFIC ABSTRACT AGAGUSEYNOV, Y.A. - AGAKHANYAN, T. M.

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• Collection: Scientific Abstracts
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• Release Decision: RIF
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• Document Creation Date: November 2, 2016
• Document Release Date: June 5, 2000
• Sequence Number: 1
• Publication Date: December 31, 1967
• Content Type: SCIENCEAB

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AGAGUSM,OV, Yu.A.; FBYGRLIW, M.S.
~111-*,~~'
Oil well derricks* Aserbonaftekhoo,35 no.11:39-42 N 156,
NUA l0-4)
(Oil we'as-Equipment and supplies)

AGAGUS174"S. T&A&4 Abas 6 ; ZOLIN, Mikhail Llvovich; AMIROV. A.D..
redaktor; an - el, A.S., radaktor izdatelletva-
[Longthening the Interval between rupairs of wells] Udlinenie
mezhromontnogo periods raboty skvazhin. Baku, Azerbaidzhanskoe ,
goo.ird-vo neft. I nauchno-tekhn.lit-ry, 1957. 39 p. WaM 10:9)
(Oil wells--Maintenance and repair)

KULIYEV, I.F.; ASHRAFOVp M.A. LAaAGUW-MZ,-ZiLA,
Organization of deep drilling oporations in offshore prospecting.
Axerb. neft. khoz. 41 no.6s40-43 Je 162. ~(MIRA 16:1)
(Underwater drilling)

AIAV, POPOVA# YL- G-9 B&'~IFL
"BjosyntheW7 of InAlOt '1.
CjwtjXtv!.',;)enzimida--,.O Slfl-stf
t h-3 51;b
Ig. V
-AV,, '. " I (USSR)
5.6-
on the Second Carbon Atme
Aodieml.- ry Ccngressp Floscawl

0 AGAKIL4 NoV , S% A.
Approximation of continuous Nnctions of two variables by partial
,num of Fourier-Hermite sories. Uch. zap. Kaz. un. 124 no.6:3-19
164, (MIRA 18:9)

~AGAXNA'NGVP H.A.; PATAMON, 0.1.
AppT;vxlmation of a certain class of continuoas functions by
pnrW -al sums of Fourier-Herrrdto serlas* Uch. zap, Kaz, une
D!.. noa6120-30 164, (MW 18:9)

T V
124-!1-13490
Translation from: Referativnyy Zhurnal, Mekhanika, 1957, Nr 11, P 163 (USSR)
AUTHORS: Agaguseynov, Yu. A., Ashurli, S. I.
TITLE: Investigation of the Stress Conditions of Component Parts of
Petroleum Refinery Equipment.
(IL.sledovanije napryazhennogo sosotyaniya detaley neftepromsylovogo
oborudovaniya.)
PERIODICAL: Tr. Azerb. n.-i. in-ta'neft. mashinostr., 1956, jNr I., pp 3-20-140
ABSTRAC T: Utilizing well-known relationships of static similarity in model
testing, recommendations are formu!lated regarding the model-scale
selection in relation to thi! magnitude of permissible errors arising
from the use of strain-gauge deformation measurements.
The results of experimental investigation on the stress distribution
Ln hooks are compared with theoretically calculated stresses obtained
through the following calculation methods: Grashoff , Belyayev, the
graphic -analytical procedv.re, and numerical integration. It is con-
cluded that the most useful and accurate method is that of Grashoff.
Recommendations are offered on the application of alloy steels in hooks
in lieu of ordinary carbon steels. Bibliography: 5 re erences.
Card 1/1 M. Sinyukov)

VMS
ft", KIM`
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i'm %'r
I Vol i
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~r4 Irv
IS -rI. - V;Aa
jr,
21

AGAKHANOV, S.A.
Method for the derivation of orthogonal. polynomials of tvo
var'Lables for a class of weight functlmt. Vest. LGU 20
no61915-10 165, (MIRA 18:10)

AGAKHANOV, S.A.; NATANSON, G.I.
The Gibbs phenomenon in cerlald proca,,.6zs of si-,mation of Fourier
&;ries. Dokl. AN SSSR 162 is 165. (MA 18 s 7)
1. Leningradskiy gosudarstvem-,~~,? pe,,i-.gogicheakly institut. 3ub-
mitted December 25, 1964.

.mn-lio-i-i c:
Approzimation of functl rm! IT.~ F,7, z -- i-e i - AV
19 -
V' rio.l.,Q-ao Ja
1,on I m7-,-adsMy goimidair,: t.venn,7,,,r pedal-7-~,!j 1 ]is I u t im,
A.] Gertsr~ra. "ittomi tted Mviy 31 -1

/Y
124 -58 -9 -944 2
Translation from: Referativnyy zhurnal, Mekhanika, 1958, Nr 9, p I (USSR)
AUTHOR: Agakhanyan, G. A.
TITLE: Brief Summaries of the Scientific Rese irches Performed by tile
Armenian Scientific Research Institute for Hydrological Engin-
eering and Reclamation (Kratkiye itogi nauchno-issleclovatell-
skikh rabot Aim. NlIGiM za 1954 i .1955 gg. )
PERIODICAL: Tr. Arm. n. -i. in-ta gidrotekhn. i melior. , 1957, Vol 2,
pp 9-23
ABSTRACT: A communication oil the subjects of the projects of the institute
during 1954 and 1955, which may be grouped according to the
following fields of endeavor: irrigation procedures and spraying
techniques; anti-seepage provisions in irrigation canal-;; vertical
drainage during the reclamation of salt marshes; mechanization
and operatioral problems of irrigation networks. Condensed
notes on completed investigations are given, also indications
relative to more detailed publications on these investigations.
2. Irrigation systems--Ar:iien,*.a
V. A. Arkhange I' skiy
Card 1/1

USSR/Soil Scieme. Cultivation. Melioration. Erosion J
Abs Jour Rof Zhur-Biol., No 13, 1958t 58353,
EuVif.) zz :.-,a "I
of Hydro-
Title A Brief in 41,,hc
on the Torritory o.~ Soviet kr-pc--~i In the Pro-
ravo7otionary Pari,)d,
r0t(.; lull
n.-t 'All-I.J1 P, 61 i 116C
-O.C t
t
- -34-

10
,

zi.,
, '-) J~"' ) ~ 1~ q --5
The Study of 'Jater 1.1~~souxzos li% thio S.S31?
uv.s- used Lit -'-Ij.e 1,4-oLnical. RO I
L plan "arsk za-
ly
*oar,-Ich
"fe Froducto wr~~rk-'4' ."rawn up by -0-i9
4,
Inntfttuta4# thQ 1~!Inr w,~tli pul. I c;,p -'!atiton in
1.2 'rerl"Iy 'VeIng uoed -,a
construoticr! 0' 'I'lo KottlyK (Fir, 2j;
on the basis of lnstitiite t-be I'Tam-
uorar,, Instruelb-Ions nu t."hvi Proparati-oin ard Tjos of Ra-
ces aud ;Duppoi!ti on drv,!Lz-.! IM:
-,ppidetrea i.n '?(;-'dTOtd
klini-K& 1
k-e and mr-ts%7-IR-In will rtrlrm 'I"
BI~ed in volume 1V of Transaction of the Ar:aNIIM.
4) Development of new types of river bank reinforob-
ment, in particular a type of I'spux" enployl.ng wire
mesh frames, tested on the Araks riTer and adopted
for introduction by the ministry of Water Resou27ces
of the republic; results of this work are published
in the information Ietter of the AraNITNEI, 1957,
Nr 2. in lzvestiya akademii nauk ArmSSR po tekhnicle-
skim naukam (Izvestiya of the Academy of Sciences of
Card 3/10 of the ArmSSR on Technical Sciences), '1958, Ily 4, in

SOV/99-59-11-14/15
The Study of Water Resou-_rces in the Armenian SSR
volume III of Transactions of the ArmNIIGJ14 for 1958,
and in "Gidrotekhnika i klelioratsiya~', 1959, Nr 5,
5) Generalization of the results of recent research
on problems of vertical draina e, development of a
method for determining the quantity of water to be
pumped out- and the number of wells, and -Pormulae for
determin-ihg the depth of incomplete wells and their
most effective placement in a drained area; results
of this work are published in ,Gidrotekhnika i Melio-
ratsiya", 1956, Nr 12, Izvestiya of the Academy of
Sciences of the ArmSSR on Technical 3ciences, 1956,
Nr 10, in the brochure "The Planning and Calculation
of Vertical Drainage", Yerevan, 1957, and in volume
II of Transactions of the ArmNIIGiM for 1957. 6)
Research on conditions and water consumption for har-
vest corn, development of norms and watering periods
for this crop in the Ararat plain; an abstract of
this work appears in volume III of Transactions of the
ArmNIIGiM for 1958. -1) Field study of the basic ty-
pes of ir-igated soils in the Sevan basin; an abstract
Card 4/10 of this w(;rk will be published in volume IV of Trans-

SOV/99-59-11 -14/15
The Study of Water Resources in the Armenian SSR
actions of the ArmNIIGiM. 8) Research in connection
with supply systems in the mountain pastures of Gek-
ham, as well as improvement in Dtilization of water
supply sources, particularly lake Aknalich; instruc-
tions for- ODe-ration of mountain water supply systems
and pastures were drawn up and transmitted to the
Ministry of Water Resources of the ArWSR. In addi-
tion the following projects are outlined in briefo,
study of the utilization of water and land resources
of the western regions of the republic, including
the Araks and Akhuryan rivers; study of resources of
the Kazakh'. river and its control - results of this
worktobepublished in volume IV of Transaction of the
Arm'NIIGJ.M; study of cotton irrigation techniques;
establishment of the expediency of rolling soil be-
fore sowing cotton - results of this work published
in the Vestnik-sellskokhozyaystvennoy nauki, 1957,
Nr 3, in the Transactions of the ArmNIIGiM, vol II
for 1957 and vol III for 1958, and in the journal
"Ayastani koltntesakan", 1957, Nr l; granting of
Card 5X0 aid to a number of collective farms of ' Martuni

SOV/99-59-1 1 -14/15
The Study of Water Resources in the Armenian 3SR
and Artashat rayon- in watering grain crops,
and use for the first time in Armenia of watering
along "Pressed furrows" - some results of this work
have been published in vols II and III of Transactions
of the ArmNIIGiM for 1957 and 1958, and '-n agricultu-,
ral Journals; development of the construction of a
U V
special race for disposing of deposits entering canals
from mountain rivers - such a race has been tested
on the Amberd canal; development of 3 new types Of
water-removal (vodosbros) equipment, a "shaft;-siphon"
(see "Gidrotekhnika i halioratsiyall 1958, Nx 9), a
"sluice-gate-siphon", and "two-tier siphon" (see Vol
III of Transactions of the ArmNIIGiM for 1958); re-
search on vacuum spillways; granting of aid to water
resource and agricultural organs on automation of con-
trol of water flow into the canal imer-i Stalin, in
the study of the characteristics of concrete o-F local
materials, and in the conduct of flood countermeasures
and the irrigation campaign. The author notes that
Card 6AO the institute devotes much attention to the preparation

The Study of idater Resources in the Armenian SSR SOV/99-59-11-14/15
of scientific cadres through graduate study. The ba-
lance of the article is devoted to a review of current
institute researches, as follows: 1) The study of dam
construction in mountain rivers of Armenia is being
continued; construction of a new type of dam with sto-
ne filtering dikes on the river Gekharot (Fig 4) in
the Aparan rayon has been completed. 2) During 1959-
1961 research will be done on dovelopmen-tv- of the tech-
nology of constructing pre-fabricated facings for ca-
nals; by 1960 the technology of making 5 m long races
will be developed and the experimental model of a con-
c:rete pouring machine for work on small canals will
be produced, 3) Study of the efficiency of farm ir-
rigation systems in the Ararat plain and the Sevan-
Razdan footbills is b9ing completed in 1959. 4) The
current research on irrigation techniques and condi-
tions for fruit-vine plantations on lands of the foot-
hill areas, Where large irrigation canals are under
construction,in conjuction with other agrotechnical
Card 7/10 measures worked out by the Nauchno-issledovatellskiy

The Study of Water Resources in the ~,.rmenian SSR
SOtT/99-59-11-14/15
institut vinogradarstva, vinodeliya i ploeovadstva.
DISKh ArmSSR (Scientific-Research Institute of Viti-
culture, wine-making and Fruit-growing of the Ministry
of Agriculture of the ArmS.TH), is expected to be fi-
nished in 1962. 5) Studies of the water resources
of rivers and streams are being made. 6) In 1959 stu-
dy oil the problems of water supply to summer pastures
was started. 7) Studies of the condition of irxiga-
ted lands in the Ararat plain, and experience in plan-
ning and operation of Irrigation systems, started in
1957, are being continued; in addition, by 1961 the
moisture balance of the whole Ararat kotlovina will
be established. 8) Study and development of methods
of building up sections of mountain rivers in order
to protect agricultural land from wash-out and in-
undation is being continued.. 9) Study and develop-
ment of hydrotechnical methods for combatting erosion
in conjunction with agrotechnical and lorest-recl~,_ma-
tion measures worked out by other scientific-research
Card 8/ 10 institutions have been started. The Arm1MGM co-

SOV/99-59-11 -14/15.
The Study of Water Resources in the Armenian SSR
ordinates its research work with that of a number of
other scienti4fic-research organizations, i-,cluding
the Institut energetiki i gidravliki akademii nauk
Armyanskoy SSR (Institute of Energetics and Hydrau-
lics of the Academy of Sciences of the Armenian SSR),
the iiauebno-issledovatellskiy institut vimogradarstva,
vizodeliya, I plodovodstva (Scientific-Aesearch Insti-
tute of Viticulture, Wine-making and Fruit-growing),
the N_n1!nhr_o-iss1edovatel1skiy institut zhivotnovodstva
i veterinarii M.SKh ArmSSR (Scientific-Research lnsti-
tute of livestock-raising and Veterinary Science of
the Plinistry of Agriculture of 'the ArmSSR), the hau-
chno-issledovatellskiy institut ekanomiki i organizat-
sii sellskogo khozyaystva (Scientific-Research In5ti-
tute of the Economics and Organization of Agriculture),
the lqauchno-issledovatellskiy institut pochvovedeniya
i agrokhimii miSKh ArmSSR (Scientific -Research Insti-
tute of Soil Science and Agricultural Chemistry of the
ministry of Agricultare of the ArmSSR),
and the Vsesoyuznyy nauchno-3.ssledovatellskiy institut
Card 9/10 gidrotekhniki i melioratsii (All-Union Scientific-Re-

SOV/99-59-11-14/15
The Study of watel itesources in the Armenian SSR
search Institute of llydrotechnics and
There are 4 photographs.
Card 10/10

TORWI-^Y;~~, kand. tekYai, -iauk; CHILITIGAFaAll, L.A.., kand. tekhn,
nauk; SHAKHRAZT0, Sh.A., kand,- -tekhn, nauk; Aq&KH~-
kand. sellkhoz. nauk) KULOYAN, L.T.,, kand. tekhn. nauk;
ARSILMAN, D.T.; BARKEUDAI~YAH, 1,G,; SARKISYAN, S.G,, kand.
tekhn. nauk; ITHITAIaAN, S.,A.; OSEITAN, A,M., doktor ekop,,
nauk, prof.; BEK4'K--1.ARC!1EV, B,1., kand. geogr. nauk, red.;
AYVAZIYAN, V.G., otv, red.; FELIDWU-1, M.P., otv. red.;
AVET19YANp A.A., teklui. red.; CHAKHAINAN, TS.F., tekhn, red,
[Results of the combined stiidies of the Sevan problen,]Rezulltaty
konpleksnykh issledovanil po -Sevanskoi probleme. Erevan, Izd-vo
Akad. nauk Armianskoi SM. VolO.Na-11"er resources and power
engAneering]Vodnoe khoziaistvo i energetika. 1962. 330 p.
(MIRA 15:11)
1. Akaderiya nauk Armyanskoy SSH, Erivari, Institut voarykh
problem.
(Sevan Lake region-Water resources development)
(Sevan Lake region-Power engineering)

AGAKHANYAN) S.M.; KOZIONOV# B.N.; STEPANENKO, I.P.
Conoerning the terminology in the field of transistor electronics'
Izv. Vys. uc'heb. zav.; mdiotekh,, A,no,lilIO-114 Ja-F 161.
(MIRA 14-10
1, Kafedra elektroniki Moskovskoj~v-i inzhenerno-fiz~cheskogo
inotituta.
(Transistors--Terainology)

AGARHANYAN, T.M.
"
Docramaing distortiono of the flat top of pulsas in Wlifiers.Sbor.
nauch'rnb. MVI no.9:88-91 155, (MIRA 10:1)
(;;~Iifisrs, (Blectron-tubm)) (Ihdse tachniques(Blectronies))

AGAKHARYAN, T.m.
Special form pulse genermtors, Sbarensuch.rab.MIFI no.9:10,2-IM,55-
(KIRA 10:1)
(Pulse t schuigues'Moctronics))

AGAMIANTAN, T.; STHPAHEM, I.
~', ~
An electronic enceptutlograph. Radio no.12:53-56 D 155.(MMA 9:4)
(Blectroancephalograpbjr)(Blectronic apparatus and appliances)

j
N, V
SUBJECT USSR PHYSICS CARD 1 2 PA 1527
AUTHOR AGAHANJAN,T.M.
TITLE The Reduction of Distortions of the Impulse Fronts on Plane
Triodes in Video AmplifierB.
PERIODICAL Radiotechnika, 11, fasc.9, 54-58 (1956)
Issued: 19,10.1956
The distortions of impulse fronts on plane triodes in video amplifiers are
essentially due to two groups of phenomena. The first is connected with the
occurrence of parasitic capacilties, the second with processes taking place
within the domain of the basis of the plane triode. These processes, diffusion
on the one hand and the disturbance of thermodynamic equilibrium between the
process of recombination and the process of the thermal generation of current
carriers on the other, lead to a temporary shifting of in- and output impulses
and to a prolongation of the. period of time necessary for the stabilization of
the front. The latter (the period of time) can be reduced by selecting the
parameters in such a manner that', with amplitudes being equal, the number of
current carriers introduced into the domain kf the basis increases with a
growing steepness of the impulse front. A decrease of the input resistance thus
also c&uses a Aecrease of the distortions of the front of the output impulse.
Triode schemes are then investigated in which the charge exchange tekes place
in the course of a considerably shorter periou'i of time than the increase of the
impulse front. ?rum the equation obtained in this connection it may be seen
that the time of increase may be reduced to an amount that is equal or even

Radiotechnika, 11, faac.9, 54-58 (1956) CARD 2 / 2 PA - 1527
less than the time of increase in a scheme with &n earthed basis. It is true,
however, that reduction is brought about at the expense of the decreased
amplification of individual cascades, The latter entails the necessity of
increasing the number of cascades, because total amplification is generally
given. It turns out that even if the number of cascades is increased the to-
tal time of increase of the transition characteristic of the amplifier with
back-coupling diminishes by nearly a whole order of magnitude (compared with
an ordinary amplifier). Another possibility of reducing distortions of im-
pulse fronts is offered by the scheme based on a combination of the current
distribution circuit and back-coupling. The simplest form of construction con-
sists of a resistance and an inductivity connected in series. It is a disad-
vantage connected with these circuits that a noticeable reduction of the time
of growth can be attained only if inductivity values are high. The most prom-
ising schemes are in any case those with back-coupling, because in their cese
a qualitative and quantitative improvement of many other properties of ampli-
fying devices can be attained besides the decrease of the time needed for in-
crease. This method for the reduction of distortions can be employed in the
case of such impulse amplifiers as are destined for amplification as well as
in the case of such as are used for the purpose of forming impulses with steep
declines.
INSTITUTION:

XT 1,__T_1 V-1 - _V
SUBJECT USSR PHYSICS CARD 1 / 3 PA 1709
AUTHOR AGAHANJAN,T.M., VOLKOV,JU.A.
TITLE Practical Schemes of Wideo-Amplifiers on Flat Trijdes.
PERIODICAL Radiotechnika, 11, faso. 11, 38-44 (19156)
Issued: 12 / 1T56
In the present work practical schemes of wideo-amplifiers in which the new dis-
tribution of the current carriers is carried o%it by means of complete back-
coupling, are described. At first schemes for a one-cascad-3 amplifier are shown.
The chain of back coupling uerving the purpose of diminishing distortions on
the impulse fronts in a*11 ouses leads to an increase of the temperature stabil-
ity of the scheme. In those cases in which this becomes necessary an additional
temperature compensation may be provided. Backcou-pling makes it possible to re-
duce the time of the increase of the transition characteristic of the casoade
considerably. Various osoillograms of the output voltage of the casoade with
backeoupling in the critical and in the oscillating state are mentioned. The
time of the increase of the cascade with backeoupling can be computed according
to the formulae mentioned in the aiathors,work in Radiotechnika, 11, faBc.9
(1956). By means of the complex backeoupling it is possible to extend the trans-
mission width of the amplifier to -the value which exceeds the frequency limit.
In an example mentioned here the utmost frequency limit ia nearly double the
frequency limit of the coefficient of the current amplification of the triode.
It is then possible, by meana of the complex backooupling, to improve the im-
pulse fronts and besides, backooupling improves a number of other characteris-

Radiotechnika, 11, fase. 11, 38-44 (1956) CARD 2 / 3 PA - 1709
tics of the amplifier: Increase of input resistance, increase of stability,
reduction of nonlinear distortions, and, consequently, also an increase of
the permitted value of the output voltage etc. As the amplification coeffi-
cient is usually given, the application of the scheme with complex backeou-
pling entails the necessity of increasing the number of cascades of the ampli-
fier. Some multi-cascade amplifiers are then described. In this connection the
number of cascades and their parameters (type of triode, degree of backeoupling,
etc.) which warrant the least ,)ossible impulse distortion must be selected. A
formula is given according to which it is possible to compute the coefficients
of amplification according to voltage for average frequencies. The time of the
increatie of the transition characteristic of the cascades is reduced with a
decrease of backcoupling. However, in the case of low backcoupling a large
number of cascades is necessary in order to attain the given amplification. In
the case of a given amplification and number of cascades the degree of the back-
coupling need not necessarily be the same in all cases. It is advisable to apply
~ lower degree of backcoupling in the case of the first cascade. The scheme of
~ two-cascade amplifier and its chara 'cteristic are described in form of a dia-
gram. Besides, the oscillograms of the output voltage of the amplifier are
shown. - Computations and experiments show that a condiserable broadening of
the transmission band of the amplifier is possible on crystalline triodes with
the help of this scheme.

Radiotechnika, 11, fase. 11, 38-44 (1956) CARD 3 / 3 PA - 1709
On flat triodils of home production wideo-amplifiers in which the time needed
for the incre.i,se of the transition characteristic is from 0,1 to 1 uF, can be
constructed with a corresponding amplification coefficient of from 3 to 1000.
It may lie ass-amed that in future crystalline triodes in large impulse schemes
will become a serious competition of' electron tubes.
INSTITUTION:

AGAK AY,-T---K.--and--P.ATilIKEYEV-,--I~.--N-.-
"Determination of the T imiting Frequency of the Current Ttansfer Coefficient of
a Junction Transistor,"
report presented at the Session on gemiconduc-tors, All-Union Scientific Session
of VNORiE, Moscow, 20-25 14LY 1957.
the paper showed that -the limiting frequency of the transistor can be detemmined
frcm the frequency characte,risti~-s of the current gain in a grounded-emitter circuit by
using suitable recalculaticn.
Electronic Design, 22 January 1958

AGAKIiANYAI-I. T. M. Cand Tech. Sci --
42/V-0 L4;
Performance in theJ'Long-Time Range."
(diss) "Pulse Amplliiifle.-r
Moa,-, 10,57. 7 pp 20 cm.
(Min. of Hiigher Education USSR, Mos Engineering-, Physics Inst.),
110 copies (KL, 25-57t, 1112)

9(2) SOV/ 11? -59 -5 -10044
Translation from: Referativnyy zbvraal. Elektrotekhnika, 1959, Nr 5,
pp 230-231 (USSR)
AUTHOR:, Agakhanyan, T. M.
TITLE: Using Capacitive &=-8-tion in Pulse Amplifiers
PERIODICAL: Sb. nauchn. rabot M(;sk. inzh.-fiz. in-t, 1957, Vol 12, pp 36-44
ABSTRACT., A theoretical investigation of a pulse-amplifier stage with a correcting
capacitor in the screen-grid circuit is presented. With long pulses, connecting
a capacitor and a resistor in the screen-grid ci-rcuit results in distorting the
flat top of the pulse and in changing the DC component of the signal. The
capacitor in the screen-grid circuit has the same effect as that in the cathode
circuit. Elimination of the capacitor results in set*ing up a negative current
feedback and in reducing the transfer coefficient. Incrtasing the anode load to
preserve gain results in an increase of the pulse leading-edge time. To
eliminate this trouble, it is recommended that a corrective capacitor be
Card 1/2

Using Capacitive Correction Li Pulae Amplifiers
SOVI 112 -59 -5 - 10044
connected to the screen-grid circuit. With equal anode loads, the gain and
leading-edge time are smaller for the capacitive -correction circuit than for a,
simple resistIve stage. If the anode resistance in the capacitive -correction
cirmit be made higher than Ra of a simple resistive stage, the leading-edge
times and gains of both c its would be equal. The resistive-correction
circuit has the advantage~mqlhe cathode circuit and the screen-grid circuit
havt, no effect on the pulse flat top. An example of calculating the capacitive-
correction scheme' is presented. Bibliography: 5 items.
L. 1. G.
Card Z/Z

-r 11"),
AGAKHA N, T.M.
Effect of negative feedback on saximum output voltage in pulse
amplifiers. Zbor. nauch. rab. MIFI no,12145-76 157. (MLRA 10:11)
(Electronic circuits) (Palse techniques (Blectronies))

'AUTHOR AGAKHANYAN T.M. M~Wx
TITLE -TF-a -Application of a Scheme with a Correction in the Cathode
Circuit of the Initial Cascade of a Video Amplifier. 108-6-9111
(Primenaniye skhemy s korrektsiyey v teepi katoda v vykhodnom kas-
kade videousilitelys, -Russian)
PERIODICAL Radiotekhnika, 1957, Vol 12, Nr 6, pp 69 - 78 (U.S.S.R.)
ABSTRACT In the introduction it is pointed out that the statement made in a
publication (Tube-Amplifier.9, vol 1, "Sovetakoye radio",1950) that
a scheme with a correction in the cathode circuit offers no advan-
tages a3mpared with a simple reostat caneade is not correct, because
this conclusion is based upon the assumption that a voltage-jump
is added to the input of the scheme. In real schemata the latter
can, however, not be the case; Here the maximum output voltage of
a schene with a correction in the cathode circuit is investigated
a:nd, above all, also the case in which the cascade with the cor-
rection in the cathode cirou 'it is preceded by a rheostat cascade
with the time constant of the anode circuit T1. The curves obtained
here show that this method is able to increase the maximum output
voltae:e considerably (in comparison to'the simple theostat cacca-
de). If t-he cascade of input amplification has an inductive cor-
rection,the increase of the signal Amplitude takes place at the
input of the output cascade accordiz.g to_a)complicatod law. Here
the case is investigated in which all (n I cpscades of the in-
Card 1/2 put amplifier are simple rheostat oancades, but where in tha

10 i3 - 3~-'~ i.-'.
The Application of a 5chape with a Correction in the M'XGWI~= ~A
Cathode Circuit of the Initial Cascade of a Video Amplifier.
output oasoade a scheme with a correction in tbo, cathode circuit
is used. It is shown that the application of the correction ir~ W!
cathode circuit brings about an increase of the maximum output
voltage in a two-cascade amplifier by the tro-fold, in a three-
cascade amplifier by the three-fold, etc.- Pormulae for the com-
putation of the output voltage and the current impulse amplitude
ace given and the param---ters of the correcting circuit are de-
termined.
(6 illustrations and I Slavic references).'
ASSOCIATION Not Given.
PRESENTED BY
SUBMITTED
AVAILABLE Library of Congress.
Card 2/2

AGAYRUIYAN~ T. 11.
T, 11. AGAIOY.144 "Tran-dent chanicteriatic of the current transpasAcin
coef:'icient of a drif'. triodo." Scientific So:jjJ(.,n Dc,~ott-d to "Radio Day".
E~Z_j~~ Trudrezervizdat, Moscow, 9 Sep. ~8
The influence is analyzed of the distribution of impurities in the base
of the transient characteristic of the current transirdssion coefficient of a
drift triode. A nonuniform impaxity distribution in the base of the triode
affords the possibility of a substantial decrease in the delay and rise
times of the pulse front of the collector current.
An approximate expression of the transient function of the transfer
coefficient is presented. which can be usod also to compute the frequency
and phase characteristic.
Analytic expressions have been obtained for the front build-up time and the
limiting frequency of the current transfer coefficient which are valid both
for drift triodes anC for triodes with a uniform irrq)urity distribution.

ACUIOLIHIANYAN) T. 11.
L. A. Serkin, !. Stelaneho, B. Xoncnov, T. M. 1"I'J7~;,"'T
Pati-~Jke:/ev:
A. G. Filij ljov, L. N. I'Eienent.6 o.* serdcund:lcting dJL-,i-.al
macnines." Scientific Session Devoted to "Radio Day", May 1956, Trudrezervizdat,
1106CO1.1, 9 S-ep.--57-
Results are presented of the development of systeris of fw-.dariental
logical elements using semiconducting instruments for a digital corqputer.
F,mdamental computational relations and experimental characterist ics of
'.-!ie Elements are presented. Among the system elements are: a trigger,
a conincidence circuit and an amplifier-limiter. The elements guarantee
reliable operj~tion of the fundamental coml,,onents of a computer at a 500 kc
fr~iquency of the main (cyclic) pulses in an -600 G---+ 500 temperature
range irith t!.e relative humidity 98%.

I
IAQMNYAN, T. M.
Transient characteristics of the current-transmission factor
in drift triodes. Nauch.dokl.vys.sbkoly; radiotekb, i elektron,
no.1:207-210 1 58. (14IRA 12:1)
1. Kafedra elektroniki Moskovskogo inshenerno-fizicheskogo
instituta.
(Transistors)

AGAKWUNj T.M.
Transient characteristics of semiconductor triodes. Izv. vys. ucheb.
::=.; ;74-41.otekh. no,*2tl94-201 Mr-Ap 158, (MIR& 1115)
1* Relcomendavana. kafedroy elektroniki Moskovskogo Inzhenerno-
fizieheskogo instituta.
(Transistors)

AGUROW, T.M.,asst.
Using output transformers for recording slow-variable signals
by magneto-electric oscillators. Izv.vys.ucheb,zav,;prib.
no-3:36-42 '58. IRA 12:2)
lo'HoBkovokiy insh.-fiz.hatitut.
(Oacillograph)

SOV/142-58-4..16/3o
AUTHOR: Agakhanyan T.M., Kononov, B.N., Stepanenko, I.P,.
TITLE: On the Terminology of Transistor Electronics (0
terminologii v oblasti tranzi-stornoy elektroniki)
PERIODICAL: Izvestiya vysshikh uchebnykh zavedeniy - haciotekhrii.ka,
1958, Nr 4, pp 496-500 (USSR)
ABSTRACT: The paper ;5ummarizes the, most important questions
pertaining to Soviet terminology in the field of
transistor electronics. Tine section "General 0-lestions"
deals with definitions for the concepts Semi-Conductor;
Transistor; "Transistron"; and "Stereotron". Finally
hole and electron transistors are defined. The second
section deals with questions of junctions (plane and
point change-over) as well as drawn and diffused junc-
tions. Then the author deals with diodes and their
functions and with triodes. A special section deals
with the Parameters ofthe triodes. Finally the paper
deals with circuit diagrams. The t:citorial staft
Card 1/2 request the reade~rs to contribute turther to the ficla

On the Terminology of Transistor Electronics SOV/142-58-4-A/3o
%I
of iefining scient4fic te~rrninolagy.
A.1)60~~L'ATIDN: Kafedra E:lektroniki Moskovskogo inzhcnerno-fiziches-
kogo instituta (Chair -)f Electronics, Moscow
Institute of hngineering Physics)
SMITTED: April 21, 1958
Card 2/2

AINHOR; Agakhanyan, To M. SOV/ 108-1~-2-1115-1
. . .........
T11"'Is t Approximate (Transfer and Frequency-Phase-Characteristics
of the CulTdnt An;plificatian Factor of a Junction-type '
Tri6de Transistor ' ' : (Priblizhdnnyye perekhodnyye i chastotno-
-fazovyye kharakteristiki sobstvennogo koeffitsiyentEi UBi-
leniya po toku poluprovodnikovogo ploakostnogo trioda)
PERIODICAM Radiotekhnika , 1956, Vol- 13, Nr 2, pp. 3 - 13 (USSR)
Received: April 25, 1958
ABSTRAM This is a report on the meeting of the Section for Semicon-
ductor Apparatus and Small Parts of Radios in the NTGRiE
im. A. S. Popova (Scientific Technical Societyfor Radio-En-
gineering and Electric Communication Services imeni A. S.
Popov , held on January 18, 1957. Here an approximated equa-
tion ~11) is deduced for the intrinsic current amplification
f actor o*) of the triode. In this equation the transfdf -
function u_(t) is not only represented by a single expres-
sion, but here, too, a much higher accuracy is guaranteed
than in the formula (1) used in reference 8. Formula (11)
Card 1/4 also offers the possibility to approximate the frequency-

SMI/108-13-2-1/15,
Approx:finati Trs~hsfei and Frequency-Phase-Characteristics of the Uurmt~
k1plificatidi'd aJunction-4ype Triode Transistojr.Sv.'.r~--~.,
and the phase-characteristic ot(i to) within a large frequency
range. The approximation introduced here is obtained from
the exact formula for the 'trwaftr function c*); which
is an infinite.series of exponential functions. The transo.,
fer - and the frequency-phase-cliaracteristies of the current
amplification factor of a triode connnected to a scheme with
a common emitter as well as a triode connected to a scheme
with common collector are inve.-itigated. Formula (27) for the
frequency-phase-obaracteristic is deduced. It is applicable
for a large frequency range. The approximated relations here
obtained can be applied for any triode connection, as they
are general. For a number of problems they can be simplified
even more by expressing the transfei~ function by formula
(22) and the frequency-phase-characteristic by formula (33)
in the scheme with common emitter, and by expressing the
frequency-phase-characteriati*c by formula (35) in the scheme
with common collector. In order to be able to use the expres-
sion introduced here in the analysis said calculation of the
transition processes or of the high frequency properties of
the scheme of surface triode3, the values of- U_ and V
0 D
Card 2/4 (time of diffusion) must be known. In order to obtain a

SOV/ 108-2.3-2-1/15 -
Appro)dmate Transfer' and r~reqvency-Phase-Char,-Ictera-z~tics of the L;%Lrrent
Amplifi6ation Factor of a Junctioh-type Triode Transistor '!- ' . I - ~ 1~1,_.:_, _.
higher accuracy of measurement normally 04-1 or CY- is
1u ebO cbO
measured instead of oc , that is the va, e inversely propor-
tional to the differenoce 1 - cl-'. The time of diffusion VD
can be determined from the frequoency- or the phase-charac-
teristio. T' in addition is expressed by the cutoff fre.-
D
quency W,., . It has to be taken into consideration heTe that
the frequency-phase-characteristics of the current ampli-
fication factor in a scheme of common basis only coincide
with the OL,(i 0)-characteristice in the case of triodes for
relatively low frequencies. (Reference 13). In a scheme of
high-frequency surface triodes the influence of the capacity
of the collector transition must not be neglected in the
analysis or in the determination of T' ~ This does not mean
that the notion of the intrinsic curred amplification fac-
tor ot, is only applicable for low-frequency triodes. The
factor (ooefficient)LX determines the share of unreal car-
riers (from the total number of the carriers changed over
Card 3,14 into the range of the basis by the emitter transition) which

SOV/108-13-2-1/15~
Approximate Trausfer and Fre quency- Phase -Charac te ri st ics of the Curreut
Amp3dfication Factor of a, Junction-tyl5e Triode Transistor S
reach the collector transition. Therefore the U--function
permits to characterize quantitatively the processes happen-
ing within the range of the basis for low-frequency as well
as for the high-frequency triodes.
W bO is the steady value of the transition function, in the
so eme with common emitter.
0(,Ebo is the steady value of the transition function in the
sc eme with common collector (?). There are 7 fiCures, 1
table, and 13 references, 5 of which are Soviet.
SUBMITTED: January 21, 1957
Card 4/4

AUTHORS., T..M. lember of the Society 108-13-4-6112
Fatri-keyev, 1~17. lfem~;ar of the Society
TITLE: The Determination of the Limiting Frequency of the Current-
Transmission Factor of a Plane Semiconluctor Triode (Opredeleniye
granichnoy chastoty koeffitsiyenta peredachl. toka ploskostnogo
poluprovodnikovogo tr1oda)
PERIODICAL: Radiotaklmika, 1568, Vol 13, Nr 4, inP 145-52 (USSR)
ABSTRACT: Measuring the limiting frequency of the ovai current transmission
factor of the triode *~C imv!diately on the basis of the frequenoy
cha-x-acteristiu of the amplif iczatlor_ factor of the triode ( connec-
ted in accordance with the wiring sclaame with common basis) is
complicatea. ana practically inaccept9ble in the case of high fre-
quenoy triodes. Therefore, :indirect -methods of meezu.:-Ing lin-Lit-
ing frequenay, which xpalk,~- it possible to oarr-j out measurements
at considerably lo~wer fr-equenc-Aes, are. of gr.~at interest. Experi-
mental data are gi*venr vihicl~ confirm the possibility of using the-.
oretical aeviations for the determination of the limiting fre-
quency of the (rarr-ant transmission factor in the c"e of triodes
Card 11/2 of tha_~ 6-typ~~ aB viell as in 'Ube case of higil~re(yaenqy drift

The Determination of the Limiting Freqi_en:~y of tte
Current-Transmission Factor of a Plane Semlcon~uctor
Trioae
SUBMITTED:
AVAILABLE:
Card 2,/2
i08-13-L-6/12
triodes according to the fraq7aency-phase characteristics of the
--arre if I
.nt ampl' icatior. factor of a schema with a common em-
Two methoas of measuring the limiting frequency Ak are studied.
The experimental re-checking of one of these methods for the de--
termination of 04', from the fmq7aency chamcteristic of the cur-
rent tunplification factor of a ~tr-.ode connected to the wiring
scheme with comiman e-mitt-er gave satisfactory results. The method
4 -ion with the devel-
~s simple ana promising, especially in connect
opment of hign-frequenoy triodm_q. There are 8 figures ani 5
references, 3 of which are Soviet-.
J"Ple 3, 1957
Library of Corq~%-eesi
1. Triodes-'requency 2. Triodee-Transmission 3. Triodeo
-Theory

14
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wpm =.ON* =ULta ftq=kk- som"Itis %all-cloglool owu+4
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9(4) 24(6) P -t- PMMX I b= X0WZTAT10M WV11765
nau4hDO-tekhn1cbeakoy* obMahestvo raftotsicft~ .1 *Jok-
troevrazi
AvOluprovadalkovays ol*ktronljca (Smicanductor Kl#ctroolds) Moscow,
GosenargoLtdat, 1959. 222 p. 13,950 noples printed.
Mj,' V.Z. ShanshurS Tech. Zd.t X.P. Torocin.
PnPWIJ The book Is intended for engloeorlmg and toohnisia personnol
Working with Smiconductor devices.,
Cova"St 749 book In a collection or lectures d*llvorod at tbq All-
Gaice Seminar on 3ealoonductor Xl*ctronics In Karch 1957. rAs
.8anduar was arVmlzed by the 3clentifla and TecAnical 3colety of
Radio JCOgLnoerlng and 12ectrioal Communications Lmeni A.3. Popov.
The authors or the lectures nave attempted to systematize the basic
information as the opervtLon of sev-1conductor device%. The articles
describe the operation and characterlatlcs~-of crystal diodes and
tramelators and discuss their application In various Low-frequency,
lath-frequency and pulse circuits. Xo personalities are mentioned.
Referonoss appear at the end of each article.
c3rd 1.47
A.A. Dilikovskly... Ugh-froquenvy Translator Amplifiers 151
The author discusses *quival*nt circuits of zlgh-freqw~uor
transiptor wiplirl*rs and describes methods or calculating
their parameters. No describes the operation Of IntOrstsZO
resonant circuits and 0-Ines the effect of feedback In true-
sisUr circuits. Be also discusses transistor stability. at&-
blUxiag networks for the Internal feedback In transistor Lzr~
walts and the naive factor. There are 25 referenace.of which 3
a" Soviet, I German and 11 Zogliah.
T.X. Ags3ac.,~z. Transient and Prequency-Phase CharaCterlstI68 Of
Tr--.;- Tz!--Istor 373
The author discusses transient, z-.-e,-Awn*r 104 Phase character-
Isties of Junotloo-type tried* transistors. i~~z 2-1-a derives
sjWrosslons for transfer rune tiono for various types ox ; --;L:z
slator doxweatIons and describe* the 0q%livalcat Gircult for hLOA
car'l 5'or
fr*Waneles ,zr ft juootjon_typ. %riode transistor. Thor* a"
references of which i ar-T Soviet (lo.juding I translation). and
187
Tried@ Transistor VIdeo.Ampliriers
d nonlinear distortions 1b 'fao~
autbor discusses linear an ulta WLtb comp-ex
.later video amplifiers and des*rLb$L cim A brief discus-
feedback and current distributing network Let". Th-re - 2
sloo of oultistase amplifiers 10 &100 pre
r%fermnae.. both Soviet.
2.N. Konocov. Trj"er and R61A"tiO0 Circuits Using junction-type 197
Tried* Transistors
TA, Lmthor describes the operation and charactorl'-Otleg of sys-
,.trjQ&l tri"ers and xUltivibrators using J-4tIO"-tyP* tren-
stators. No also dlK=uXA*6 thOlr stability 8=4 derives "Pros'
alone for GaiculstIng transistor aircult PerformanoG. Mere A"
4 rgrereccos of which 3 -a" Sorlst AD42- Jg"&Usb'

9(4) PHASE I BOOK J.?,XPLOITATION SOV/1778
Hauchno-tekhnicheakoye obshchestvo priborostroitellnoy
promyshlennosti. Moskovskoye pravleni.ye
Tranzistornaya elektronika v priborostroyenii; sbornik trudov
konferentsii (Irransistor Electronics in the Instrument-making
Industry; Collection of Conference Transactions) Moscow,
Oborongiz, 1959. 289 p. 1,400 copies printed.
Ed.: N.I. Chistyakov, Doctor of Technical Sciences, Professor;
Ed. of Publishing Hou-se: S.D. Khametova; Tech Ed.: V.P.
Rozhin; Managing Ed.: A.S. Zaymovskaya, Engineer.
PURPOSE: The book is intended for scientific and engineering
personnel of the ins"U'rument-making and radio industries
engaged in the development of electronic and radio equipment.
COVERAGE: The authors of this collection of articles discuss
the theory, principle of operation, calculation and appli-
cation of electronic circuiteusing transistors. They also
describe 6a_~sistor application in measuring
computers, radio and automatic and remote control eircuits.
The book is based on transactions of the Scientific and
Engineering Conference organized by NTO in Moscow in
Dee-ember 1956. The conference discussed 94 Daners on

Transistor Electronics (Cont.) SOV/1778
of a capacitive load and temperature on tran-
sistor response. There are 3 references of
which 2 are Soviet (including 1 translation),
and 1 English.
V-T. Dimitriyev,*Candi-date of Teahnical Scienees, Transisto~,
Summing Amplifier 95
The author analyzes single - and multistage
feedback transistor amplifier circuits and
discusses their frequency and phase charac,*
te-Istics. He also describes the methods and
c*I'.-c.uits used in stabilizing transistor operatiai
ait_'i discusses circuits for measuring transiotor
aln. There are 9 Soviet references (including
tranalatioas).
T.M. Agakhanyan, Engineer. Approximate Determination
or-th-e-7r_a_n_,9-re_r Function and Transistor Response to
an Abritrary Pulse 114
The author detemines the transfer function for
Card *M

Transistor Electronics (Cont.) SOV/1778
a transistor circuit by means of the Maclaurin
eeries and preaents a theoretical analysis of
transistor response to an applied current and
voltage pulse of an arbitrary shape. There are
14 references of which 10 are Soviet (including
1 translation.), and 4 English.
V.P. Nechayev, Engineer. Thermal Stabilization of
Pulse Circuits Using Junction-type Transistors 127
The author describes the operating prin-
ciple of monostable multivibrators using
junction-type transistors and discusses the
factors causing instability. Fe also dis-
cusses the effect of temperature on pulse width
and describes temperature stabilization by means
of diodes and thermistors. There are 3 references
of whi6h 2 are Soviet and 1 English.
G.0. Fridolin, Engineer. Transistor Oscillator3 and
Their Application 135
The author briefly describes the operation and
application of the following transistor circuits:
Card 1*6:P2

81117
s/142/60/000/01/009/022
El4o/E463
AUTHOR: Agakhanian; T.M;W
TITLE: Large-3ignal Transistor operation
PERIODICAL: Izvestiya vysshikh uchebnykh zavedeniy, Radiotekhrika,
196o, Nr 1, pp 87-93 (USSR)
ABSTRACT: Previous analysis of large-signal transistor operation
considered diffusion transistors in which electric field
is practically absent from the base region. The present
analysis concerns drift transistorscin which an
electric field exists in the base fegion because of the
presence of an impurity concentration gradient. The
analysis is based on the dependence between the minority
carrier charge density and the currents flowing in the
emitter and collector junctions. For the present case,
it is necessary to take into account the coordinates of
the points. In addition to the well-known three
operating regions for a transistor - cutoff, active and
saturated - the author distinguished a fourth region -
the inverse active region characterized by reverse
potential on the emitter junction and forward potential
Card 1/3 on the collector junction. This is one of the "IX

81117
s/A2 /60/000/01/009/022
E14o/E463
Large-Signal Transistor Operation
characteristic regions for drift transistor pulse
circuits. The calculations are carried out for the
plan-parallel approximation. Due to the dependence on
geometry of the effective lifetime and carrier
acceleration, the equation of continuity is non-linear
with coefficients which are functions of coordinate.
In carrying out the solution, the -further approximation is
made that these coefficients are constant quantLties.
Experimentally, it is found that if the storage constant,
mean diffusion time and drift time are measured
experimentally (hence average values), the agreement
between calculated and experimental transistor
characteristics is satisfactory. The equation of
continuity is solved using Fourier transforms to obtain
the transfer factors, for an ideal current drop. Then
using the Duhamel integral, the transistor operation is
determined for arbitrary junction currents. The common
base, common emi'--ter and common collector cases are
analysed and an equivalent transistor circuit is given.
Card 2/3 The results may be also employed for diffusion transistors
LIK

81117
S/142/60/000/01/009/022
E140/E463
Large-Signal Transistor Operation
considered as a particular case of a drift transistor
when the electric field in the base vanishes. There are
2 figures and 8 references, 5 of which are Soviet,
2 English and I German.
SUBMITTED: Ju1Y 15, 1959
Card 3/3

q50 e) 82976
s/142/6o/oo3/002/016/022
AUTHOR: Agakhanyan, T.M. E192/E382
)TITLE: Use of the Transistor Saturation for Clamping
the Signal Level
PERIODICAL: Izvestiya vysshikh uchebnykh zavedeniy,
Radiotekhnika, 1960, Vol- 3, No. 2, pp 283 _ 284
TEXT: Whontransmitting a train of rectangular pulses the
signal level can be cpnveniently clamped by employing a
transistor amplifiergoperating under saturation conditions.
The diagrem of such a device is shown in Fig. 1 and the
oscillograms illustrating its operation are given in
Fig. 2. The amplifier is normally cut off and the pulses
applied to its input should have an amplitude sufficient to
produce the saturation conditions. However, in order to
avoid the lengthening of the output pulses due to saturation,
the emitter circui-L-, contains an RC element. When the pulses
are applied, the amplifier is opened and the collector
potenti,al is increased. When the transistor is saturated,
the potential is stabilised at a level defined by the base
potential and the potential of the collector relative to the
base. In this manner, the signal level at the collector is
Card 1/2

82976
s/142/60/003/002/016/022
E192/E382
Use of the Transistor Saturation for Clamping the Signal
Levol
fixed. The same is true of -the signals obtained at the output
winding of the transform---. There are 2 figures and 2 Soviet
ref erences.
ASSOCIATION: Kafedra elelttroniki. Moskovskogo inzheiierno-
fizichaskogo instituta (Chair of Electronics
of Moscow tngineering Physics Institute)
SUBMITTED: JulY 15, 1959
Card 2/2

- AGAMANY-Aff, T. M.
Behavior of a transistor at large eignals. Izv.vys.ucheb.zav.;
radiotekh. 3 no.1:87-93 Ja-F 16o. (HIRL 13:8)
1. Rekomendovane, kafedroy elektroniki Hookovskogo inzhenerno-
fizicheskogo instituta.
(Transistors)

s/iog/60/005/009/028/030/XX
E192/E382
AUTHOR* Agakhanyan, T.M.
TITLE-. Transient Characteristics of the Elements of the,
Type-T Equivalent Circuit of a-Drift Transistorl'
PERIODICAL: Radiotekhnika i elektronika, 1960, Vol. 5,
No. 9, pp. 1531 - 1538
It is assumed that the transistor can be regarded as
a xl-:an.e parallel system so that the concentration of the
nonz~,quilibrium carriers m can be expressed byg
DM m 1 m 1 D2m
+
at T. 'r 2 I-D 2
H E
and the current density is given byz,
wq (2)
('~E 2T D
Card 1/6

s/log/6o/005/009/028/030/XX
E192/E382
Transient Characteristics of the Eletrwits of the Type-T
Equivalent Circuit of a Drift Transistor
In these equations ~ = x/w where w is the base width and
x is the coordinate along the basez-
~Ho t.D and -cE are
the storage time constant, the average diffusion time and the
drift time of the transistor, respectively, The transistor
can be represented by a type-T equivalent circuit, This is
s;hown in Fig. Ia. where ~& is the ohmic resi.stance of the base,
C'-'-W is the emitter junction capacitance, C,,-. is the collector
junction capacitance, while the remaining elements (a, Z,,
z and li,,) represent, the characteristic parameters of the
transistor proper. The transient. characteristics of the
emitter current iransfer function oL and the input impedance
zI of the transistor can be dotermined by assuming that the
transistor is short-circuited at the output and that a 4~urrent
Step is applied to its input, On the other hand. the
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S110 9/60/005/00 9/02 8/0 30/)'"vL
E192/E382
Transient Characteristics of -the Elements of the T-,,- - T
, PQ-
Equivalent Circuit of a Drift Transistor
transients of the collector it-ripedance Z. and the diffusion
feedback coefficient Ii. can be determined by sonsidering
$i~
the operation of the transistor when a unit voltage step is
applied to the collector, while the emitter is open-circuited,
The transients of the circuit elements of Fig, I were obtained
by solvIng Eq. (1) under the assumption that the coefficients
of this equation are constant quantities, Thus, it was
assumed that 't H E and 't, Dwere constants (average
quantities), The emitter current transfer function a(t)
is expressed by Eq. (4), where oc is the magnitude of the J6
transfer function at low frequencies, y is the injection
coefficient for the emitter and I = 't D /","E ,The transient
characteristics evaluated from this equation for -arious
values of I are shown in Fig. 2 (n = 0 represents the
characteristic of a diffusion transistor), The transient
characteristic oJO can be approximated by Eqs, (5). where
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E192/E382
Transient Characteristics of the Elements of the Type-T
Equivalent Circuit of a Drift Transxstor
.'~X Is defined by Eq~ (6), On the basis of Eq. (5) the
frequency-pbase characteristic of a can be approximately
expressed by Eq~ (7), where w Ck is the cut.-off frequency
for a The transient function for the input impedance is
expressed by Eq. (8), where r, is -the input resistance of
1~
the transistor, Fig. 3 shows the transients of the input
impedance for various values of Tj ., In practi.ce, this
transient impedance can be approximated by the simple function
expressed by Eq. (9). The transient function of the collector
impedance is given by Eq. (11.), where rK is defined by
Eq. (12). Eq. (11) can be approximated fairly a,~curately
by the simplified formula given by Eq. (13), The transistor
can be represented by another type-T equivalent circuit
(see the seLond circuit in Fig. 1), which sometimes permits
simplification of the calculations. In this case, the
internal feedback is represented by the internal impedance ZV
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s/109/60/005/009/028/030/XX
E192/E382
Transient Characteristic of the Elements of the Type-T
Equivalent Circuit of a Drift Transistor
of the base. The transient function of the base impedance
is expressed by Eq. (17), while the transient function of
the emitter impedance is given by Eq,, (18), In practice,
tho diffusion base impedance cAn be approximated by Eq. (21)~
Two caimnon-emitter circuits of the transistor are also
considered, These are illustrated in Fig. 4. The main
parameter in these circuits is the base current transfer
function 0 , which is defined by Eq. (24). The transient
of the base current transfer function is expressed by
Eq. (27), where 0 is the magnitude of the current transfer
coefficient at low frequencies~ On the basis of the analysis
it is concluded that the high-frequency characterisitcs of
a drift transistor are primarily determined by It Dg 'rE and
Ic H "The first two of these quantities characterise the
motion of the carriers along the base, while the third one
represents the storage of the charges in the base, While
employing the equivalent circuits of a transistor, it is
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S/109/60/005/009/028/030/XX
E192/E382
Transient Characteristit of the Elements of the Type-T
Equivalent Circuit of a Drift Transistor
convenient to employ a time constant "C CL or the cut-off
frequency w OL and the phase shift coefficient )i instead
of 't D and %E . The quantities w a and M characterise
the motion of the carrier along the base and can be determined
from the frequency-phase characteristic a(jw) ~ As regards
Ic H Iits average value can be determined from the amplitude-
frequency or transient characteristic of the base current
transfer function 0 . There are 4 figures and 8 references~
3 English. 1 German and 4 Soviet.
SUBMITTED- November 18, 1959
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3/108/62/017/004/006/010
D288/D301
AUTHOR: AGakhanyan? T.M., Member of the Society (see Associa-
ff-ohnT-M
TITLE: Temperature stabilization of transistor amplifiers
PIMIODICAL: Radioteklinikat v. 17p no. 4, 1962p 38 - 43
TEXT: Three causes of temperature effects on transistor parame-
'15ers are described: Leakage current;3 due to surface effects and not
chanuing drastically with tp saturation currents of junctionst ris-
ing oy 10 ~~ for Ge and 12 - 14 5'? for Si @ 10C change, and potential
dis-olacement in the emitter diode, which is proportional to kT/q
and to saturation current I eo, . For 100 rise it usually amounts to
1.7 2 mV. Resulting from these variablesp current gain 0
10 00 also changes xvith t. Stabilization methods by means of
b F 100
ne6ative feedback are treated next, formulas relating gain and stabi-
lity factor being quot-ed for currentsp voltage- and combined feed-
back arrangements. Good experimental agreement with measurements on
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Temperature stabilization of
S/108/.62/017/004/006/010
D288/D301
Ge and Si transistors is claimed. Conclusions draym are: 1) The Ce-
ne.rally superior coi,,ibined feedback can create problems of stability
margins and poor transient response due to increase of input impe- V,
dance. 2) Decreasing resistance values for the base bias potentio
meter can lea( to potential changes in the emitter junction, ~arti-
cularly with -,..ansformer inputs.05) With low current (-~ 3 MA of
Ge traaisistors main changes are caused by Ico, P having more impor-
tance for I = 3 ... 5 mA. 4) In Si transistors over the whole tempe-
rature range changes are due mostly to P and Ue (emitter Junction
potential shift). 5) Hence, where P and Ue change in a given tempe-
rature rangeq the generally assumed stability superiority of Si
0 0
over Ge can be of iess than one order. There are 5 figures. The Eng-
lish--language publication reads as follows: J.H. Early, Proc. IRE.,
v. 40, no, 11, 1952.
ASSOCIATION: Nauchno-tekhnicheskoye obshchestvo radiotekhniki i eld-c-
trosvyazi imeni A.S. Popova (Scientific and Technical
Society of Radio Engineering and Electrical Communic a-
tions, imeni A.S. Popov) [Abstractor's note:,Name Of
Association taken from first page of journal
SUBMITTED: May 23, 1961
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AGAKHANYAN, T M
V2A-
Increase in the Q-factor of a transistor pulse amplifier stage.
Radiotekhnika 17 no.6:32-37 Je 162. (KRA 15:5)
1. Deyetvitellnyy chlen Nauchno-tekhnich-sakogo obshchestva
radiotekhniki i alektroevyazi. (Transistor amplifiers)

AGAUPYYAl",
[A'.;,tract of lectures on tho section "Electronic switches"]
Eoiispelkt lektsil'-)o raze&Da "Elektrcmnya klAuch-i." Moskira,
Moo~. Jnzhenerno-fizitheskii in-tp 1964. 66 p.
(MIRA 18: 7)

ACCESSION XR: AP4009989 S/0109/64/009/ODI/015,5/0162
AUTHOR! Agakhanyan, T. M.
TITLE; Analysis of a drift transistor with an allowance for variation in the
mobility and life of carriers
SOURCE: Radiotekhnika i elektranika, v. 9, no. 1964, 15.5-162
TOPIC TAGS: transistor, drift transistor, drift!tranaiiitor theory, drift
transistor carrier mobility, drift transistor 'carrier life, transistor charge
method
ABSTRACT: A theoretical investigation of a planar motlel of a single --variate
transistor at a low injection level is presented. The effoct of an impurity
concentration on the transistor parameters is considered; approximato formfilas
are developed. Three time constants T-, ro,, . and J.~[ characteri= reconibi-
nation in a drift transistor and represent the average val-aes of life in the base
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ACCESSION NR: AP4009189
--TI
region. The first T refers to the process of accumulation or depletion. of minor
carriers due to their recarnbirtation in a state of dynan-Ac equilibriuirri; 1-,, and
rcr.,. refer to the time of building the charge of minor carriers traveling from the
emitter to the collector and backwar,!, respectively. It is found tivat
< life in the drift-transistor base iii highest at the! colleCtor
junction where the impurity concentraiion is the lowest., the time constant T' in a
drift transistor is'of the same ord,!)r as that in a diffusion transistor. It is also
found that the conventioual .11chargt, method" of analysis is inapplicableto the case
of recombination processes 4a transistors w1t1i an inhornogeneous base.
Orig. art. has: 2 figures and 20 formula*.
ASSOCIATION:
SUBMITTED: 17Nov62 DATE AGO: 1OFeb64 ENCL., 00
SUB CODE: PEI 1i NO REF SOV: 003 OTH=R:, 005
7
rd
-------------

Design of a microelement with distributed RC links. Radiotekhnika
18 no.10:67-72 0 .163. (MIF-k 16:12)
1. Deystvitellnyy chlen Nauchno-tekhnicheskogo obsbehestva
radiotekhniki i elektrosvyazi im. A.S.Popova.~

ACCESSION NR: AT4040784 S/2657/6,1/000/011/0214/0229
AUTHOR: Agakhanyan, T. M.
TITLE: Measuring the static parameters of a semiconductor triode
SOURCE-. Poluprovodnikovy*ye pribory* I Ikh primenentye; sbornik statey, no. 11,
1964, 214-229
TOPIC TAGS: semiconductor device, triode, somiconti.,cior tr[ode, heat current, leak
current, Otemperature potential, volume resistivity
ABSTRACT: The cuthor notes Clat the'work of a seinic6nductor triode in the static mode
Is characterized by the following parameters: 1. the heat currents of the collector It.
and emitter It junctions; 2. the leak currents of the collector Ile and emitter Ile
junction; 3. the temperature potential T = kT and the correction factor m which makes
allowance for the effect of carrier recombination in the region of the p - n junction on
the magnitude of the current-, 4. the volume resistivity of the base r' the collector
r' and the emitter i~; 6. the current transmission factors from the Le bD the collector
c
BN and to the emitter BI, or the current transmission factor of the emitter vA. and the
1/2
cQrd-.

ACCESSION NR: AT4040784
collectorcK 1* 7be present article d6als"With methods of ;'neagiuring the first four
parameter groups. ';so results of 6 casurements of these parameters for a number of
Soviet-produced triodes are presented and discussed. Tlie author concludes that the
ohmic resistance of,the collectoi and emitter to low (voltage drop of 10-70 mv); Ike
scatter of " ~~alues is much larger In drifting than In driftless triodes; and the
resistance
sistance C 1. 5-3 times the collector resistance. Grig, art. has- 5 figures,
emitter re S'
10 formulas and 17 idbles.
ASSOCIATION: none
SUBMITTED: 00 ENCL: 00
SUB CODE: EC NO REF SOV: 002 OTHER: 004.
-2/2
Card J

AGAMANYAN T I'
Gharacteri,,;tics of -, p-n step junction at direct biz),V..
.R%dictckh. i elektron. 10 D 165.
(1-=A 19 - 1)
1. Submitted April 6, 1-964.

Dopeiidenco oV tho mirrent tT md
the injection factor of the rj-n jimction or the direct bias
potertial. Radiotakh. i elekiron. 11 no. 2:201-20 F 166
.7
("iTHA 19:2)
1. Sob,,dtted October 5, 1964.