SCIENTIFIC ABSTRACT ALIYEV, G. K. - ALIYEV, G. M.

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• Collection: Scientific Abstracts
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• Sequence Number: 12
• Publication Date: December 31, 1967
• Content Type: SCIENCEAB

7 -'Vf -(T.' vjolllz~t~znliyy wvatel' nftu"i- GlISMANY S.M.,
6.K.
pr(;4%; TEEFTER
('n the 7C)tl-. win--vc-rsary of the Psh,-t-,;-ridze N:). 1, G-Linice-I Blspital".
Azerb. med. zhur. 41 nc.2~84-85 Ja 164. (h' i 14 2 7: 12
2. Glavny.,r vi-och k1j.'-n.4charzkoy bcl-trjt,3y N,,,. 3 'i~,hnparldze, Baku
(for Kadynwlll
,a

ALIYEV. G.K.; GADZHIYEVl A.A.; TAGIYEVI G.A.
....... -1
An&IyBls of Bone aspects of echinococconia. Azerb. ined. ilhur,
41 no,9tl7-25 S 164. (I(MA 'o.Btll)

ALIYEV, G,K..; GADZI11YEV, LOGINOV, A.A.; KNABENGOF, V.G.; GA~GHIYEV, I.M.
Motor chrona):Jn in premedication for local anesthesia wil;h
neuroplegIc mixtures. Azerb. mod. zhur. 42 no.4~15-20 lip 165.
(MIRA 1.8.-9)
1. 1z kafedry khirurgii (zav.- zasluzhennyy deyatell nauld prof.,
G.K. Aliyev) Azerbaydzhanskogo Instituta usovershenstvovitniya
vrachey imen! Aliyeva (rektor - kand. tied. nauk B.P1. Aga,rev).

ALIYEV, Gjt.
iilfect of chlorine on the a,- selenium. I av. AN
i.-,ert,.SSR no.''): 3-9 S 157. (MMA 10: 1.?
(ChI,:,rjnt3) tSeleniu-,! Peat --Gondue t t on)

c
AUTHORS: Aliyev, 0. M. and Abdullayev, 0. B.
TITLE: A Note on the Influence of a Chlorine Admixture on th(i TherrAl
Conductivity of Selenium (0 vliyanii primesi khLDra na. teplopro-
vodnost' selena),
PERIODICAL*. Doklady AN SSSR, 1957, Vol. 116, h'r 4, i)p. 598-6oo (U:;SR)a
ABSTRACT! The thermal conductivity of semicond'actors and its dependence on
the chemical. composition and on crystal structure was investigated
by A. F. Ioffe and his students (reference 1, 2, 3, L). In tho
prodw.-tion od selenium rectifiers admixtures of halof,,anes, in parm
ticul-tr chlorineY are used for the purpose of ii:icreaeing the cur=
rent passinG through the semiconductor. The ex.plarimenta showipd the
following results. During the electric formation and the further
continued operation of these rej.,tifiers a redistribi7tion of the
admixtures takes place, which modifies the electric thermal
characteristics of the selenium layer and of the syst,em as a whole.
In the backward direction the voltage applied to the rectifier is
local-ized almost entirely-at the anode at the electron-hole transio
tion because of the formation of a great resistance, This causes
a temperature gradient along the semiconductor, The authors deters
Card 113 mined the coefficient of thermal conductivity by a titationary mew

jmw~_
A Note on the Influence of a Chlorine Admixture on the Thermal 2o-11.20/51
Conductivity of Seleniiim.
tbod by means of a cylindrical set up, containing a !jenBitive semi-
conductor ring for the removal of lateral heat lossen. A diagram
Illustrates the curves of the modification of heat conductivity of
selenium and its dependence on the eblorine content :from 2o to 220C.
The different, curvemare related to vitreous arid crystallised seK
lenium. The course taken by these curves is independend of the de-
gree of crystallization, but depends only on the adiiiixtures. The
heat conductivity decreases as far as 0,031/ont an Lnerease of the
chlorine content,, then it increases again and remains constant above
a value of 0,501a . A similar dependence of the heat conductivity was
found by the author in the case of iodine and bromine admixtures*
The dependence of heat conductivity on the degree c:f crystallization
is mainly determined by the conditions of the scattering of the pho-
nons with increasing concent.ration of seleniirn the concentration of
the admixtures is decreased and there with the meam free path of
the pbonons increases. By this, the frequency of W.-,eir scattering
decreasc3 and the anharmonicity degree of the; osci1lations and there*
U
fore the heat conductivity increases. The authors here evaluate this
influence of the modification of the free path and the numerical
Card 2/3 values, which -were found, are given. On crystallisation the free

A=V, G. M.: Master Phys-Math Sci (diss) -- "Investigation of t1te effect of
certain additives on the thermal and electrical properties of nele-nium and
germanium". Balm, 1958, published by the Acad Sci Azerb SSR. 14 -,q) (Min Higher
Educ TJSSR, Azerb State U im S. M. Kirov), 150 copies (KL) No 5) 1g."g, ih-r)

69396
SOV/137~69443423
Translation 11roms - ReLferattivn7y zhurzial, Metallurgiya, 1959, Nr 4p. p 155 (USSR)
LI 17 DO
AUTHORS: Ajiyev 0.m., Abdullayev, O.B.
TMEg The Effect of the Admixture of Chlorine on Electric Properti.es of
Selenium A VI
PERIODICALt Izv.AS AzerbSSR, Ser. Fiz-tekbn. i khim. n., 1958, Nr 4, pp 23 30
(Azerb. r6sum6)
ABSTRACT: The authors investigated changes in electric conductivity Cand thermo-
emf ck of Se depending on Cl concentration (0.0035 - 0.5%) !ind tempera-
ture. Crystallization of a smelted Se and SeCl mi:-,ture wait carried
out under pressure first at 1300C, then at 2000~ (40-, minutes each). C1
admixture up to 0.125% raise 0 of Se (up to 1,000 times) t-le maximum
is attained at 0.125% an then 5 decreases with higher Cl .!Lmount. Hole
conductivity is preserved. The coefficient 0( within a raA!;e of 25 -
850C inorewies with elevated temperature. Blectrooonduotivi,ty in this
Card 1/2 range of both pure and admixed Se increases with raising taiiperatures X

69396
SOV/137-59.-4-8423
The Effect of the Admixture of Chlorine on Electric Froperties of Seleniun
according to the exponential law. If the
coefficient Ok decrease, and concentration
increase. It is concluded that admixtures
energy levels in So,,, which are arranged at
Cl amount increases, dissociatitm work and
and effective mobility of' chari:e carriers
of Cl cause the formation. of additional
the upper boundary of the fillid-up zone.
A.A. ix
Card 2/2

51505
0 SOV/137-59-5-2.0665
Translation fromt Referativnyy zhurnal, Metallurgiya, 1959, Nr 5, p 172 (USSR)
AUIRORS: Aliyev, O.M., Abdulayev, G.B.
T=: On the Effect of Chlorine Admixtures on the Heat Conduotivity
of Selenium vt
r-
PMIODICAL: Tr. In-ta fiz. i matem. AS AzerbSSR 1958, Vol 9, pp 20 - 26
(Azerb. r6sum6)
ABSTRACT: The atuhor used the method of the stationary thermal f:1eld to
investigate the effect of the admixture of 0.0035 - 1% Cl on
the heat conductivity of Se. It was found that the heat con_
ductivity minimum was attained with a 0.03% Cl concentration.
After the C1 concentration was as high as 0,5%, the heat con-
ductivity approached a oonstant-value butdLd not, howeter,
attain its initial value. The course of the heat conductivity
curve does qualitatively not depend on the Se recrysta:llization
and is explained by the presence in Se mainly of phonon heat
conductivity and by changes in the cross section of ph,:non
Card 1/1 scattering depending on the Cl concentration. A.L.

ABDULLAYZV, G.B.; ALIYICV, G.H.; CHETVMVDV, N.I.
Influence of Ga and Fe impurities on the thermal condu,:tivity of
germanium. Zhur. takh. fiz. 28 no.11:2368-2371 N '58.
(KIRA 12:1)
(Germanium-Thermal proportion)

GTHORS: Ali;,ev G. 11. Nbiiillayev, G. B. S0V/2o-!2o-1-1-9/63
TITLE: The Tenperature Dependence of the Thor7,al Cond.ictivity of
Selenium With Small Chlorine Additions (0 tempitraturnoy zavisi-
mosti teploprovodnonti selona s -primeslyu khlova)
PERIODICAL: Doklady Akade-iii nauk SSSR, 19513, Vol- 12o, Nr 1,
PP. 76 - 70 (USSIR)
ADSTRACT; The present paper investifates the tomperitture dependence of
the therinal conductivity of crystalline colenimp with different
additions of chlorine. The samples of dif!eronl: chlorine content
were prodneed. of a nixture of seleniiin tetrachloride and sele-
nium (purity 99,996%). Vie amount of the chlor:~ne contained
in the selenium was determined arGentometrically. The cooffi-
cient of themal condiictivity was deter--:iined 1;~ means of the
otationary nethod with a cylindrical apparatus. A dia,-ram shows
the temperature do-endence of the coefficient )f th~ thernal
conductivity upon different chlorine contents. The coefficient
of thermal conductivity decreases with risin- temperature.
Only i); the caae of pure an,.iples there is a c-ill deviation fron
Cavd. 1/3 the lincality. Another dingraz~ shovir. the del)or!ence of the

The Temperature Dependence of the Thermal Goiiductivityso~2o-12o-1-19116'j
of Selenium With Small Chlorine Additions
thermal conductivity on the electric coniuctiv4.ty for samples
of pure selenium as well as for samples of different chlorine
content. In all saliplas a li-near de,-ende!ice eX%sto between
the electric conductivity and the ther-7n.1 conduct-ivity. With
increasinG chlorine content the clope of the strai-it beco,-,ieu
less. The straights expressing the dc~' ~endence (if the th-ermal
conductivity A on the electric conductivity a oan be expressed
by the equation A - kcr + c for smaples with End without chlo-
rine additions, where k and c denote con.-tants in till samples.
(The corresponding nunerical valueu are jiven). At all tem-
peratures the thermal conductivity in the case of an increasing
electric conductivity first decreases rind then increases. The
total coefficient of ther!nal conductivity of a body is, an is
known, composed of the coefficients of thermal conductivity
dependent on phonons and electrons. X - X electron + ~ phonon'
In the samples with and without chlorine additions A electrons
is ertromely umall which is proved by the lack. of any influence
of the mamnetic field on the thermal condiietivity. A raise of
Card 2/3 temperature increases the scattering of the phonons on phonons

The To.,.-ipcraturc Dependence of the Thermal
of Soloniun, With Snall Chlorine AdOltionu
and therefore reduces t,,c coefficiort of thcr!.lml conductivity.
V'. dqtevionation of tile Tolt-An 'T
P0 -, thnTacte)-;Aics Of the
DDIVI)Ium rDctMars at; a conDei~nonce ol a
;):Irtl,,, iD oe.;)onaent,on EAD 130c,~-OIDD of Ow 0DD),.FAC3&'-)t Of
VnOTMal 0011allCtiVity Of Solellillit a"Ll therefore aalsO on the
decrease of the thermal scatterin-. Seleniu-n wtth an addition
L)
of 0,003r(w chlorine has ito -reatert thernal c-)ndiiAivitY at
800 (vhich corresponds to the operation-al t tire of the
seleninn,i rectifiers). There are 4 fiiires zd 13 reforencon,
allof w%ich are Soviet.
PRESKTED: November 1, 1957, by A.F.Ioffe, Member, Aca2e-,; of Sciences,
USSR
SUBMITTED: October 11, 1957
1. Selenium-Conductivity 2. Canductors-Temperwwre fanors
3. Selenium--Heat transfer 4. Heat--Conductivity 5. Chlorine
--Properties 6. Dry disk rectifiers--Analysis
CaA 3/3

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-74

6826,1
00 SOV/81-59-10-34022
Tzurislation froms Referati-vmn zhurnal, Xhimiya, 1959, Nr 10, p 28 (USS11)
AUTHORSs Aliyev. G.M., Abdullayev. G.B.
TITLE- On the Effect of the Admixture of Chlorine on the Heat Condu,ativit of
Selenium *%
PERIODICAL: Tr. In-ta fit. matem. &S AzerbSSR, 1959, Vol 9a pp 20-26 (Avarbaydzhanian
summary)
ABSTRACT, The heat conductivity X of amorphous and crystalline Se and. the effect of
a Cl admixture on it has been studied. The increase of A at the transi-
tion from amorphous to crystalline Se is connected with the reduction of
the quantity of defects in the lattice which are centers of scattering of
phonons. The admixture of C1 to a certain percentage Inoreexes the ef-
ficient cross section of phonon scattering, which leads to the reduction
of A ; at a further increase of the Cl concentration due tc, recombination
of the admixtures and the formation of neutral molecules, A increases again.
The ratio ;kcr/X. for admixture-free samples is equal to 2, in the case
of samples with C1 it is, independently from the Cl content, equal to 3.
Card V2 It is assumed that in the crystallization of Se the admixtuves are displaced/

6826.3
sov/81-59-10-34022
On the Effect of the Admixture of Chlorine on the Heat Conductivity of SvIenium
and are concentrated in the intercrystalline interlayer and affect their heat conductivi-
ty - V. Ostroborodova VK
Card 212

28016
S/081/61/000/015/CID5/139
~Lj. D B101/B110
AUTHORSt Abdullayev, G. B., Aliyev, M. I., Bashahaliyev, A. A.,
Aliyev, G.M.
TITLEt Effect of halide impurities on the physical properties of'
selenium
PERIODICAL: Referativnyy zhurnal. Khimiya, no. 15, 1961, 29-~(), abstract
156196 (Sb, "Vopr. metallurgii i fiz. poluprovodniicov".. 14.,
AN SSSR, 1959, 80-86)
TEXT: The auLhors studied the effect of halide impurities on Vae
crystallization rate, electrical, thermal, and optical properti-Da of je.
X-ray analysis showed that at annealing temperatures from 60 - i~OOC iodine
impurities accelerate Se crystallization. In the presence of I and Br, Se
begins to crystallize at 600 C, 'while pure Se begins to crystallize only
at 800 C. Halide impurities increase the electrical conductivity of Se by
several hundred times. The depe.ndence of the hole mobility on the
Card 1/2

28016
3/081/61/000/015/()05/139
Effect of halide impurities on the B101/BI10
impurity concentrations shows a maximum. With rising temperature the hole
mobility in pure Be and in Be with iodine impurities increases, while their
concentration decreases. This phenomenon is explained by strLctural
peculiarities of Be which is a polymer, and by the effect of the inter-
crystalline amorphous layers acting as potential barriers. On tranjitiol.
from the amorphous to the crystalline modification, thermal conduct-ivit-y
of Be increaLea from 3.13-10- 3t0 7-01-10- 3 cal/cm-3ec-deg (25"C). 1n
this case spec.fic heat decreases. At 640 m/t the forbidden-band width of
the amorphous Be is 1-94 ev, that of crystalline Be (at 680 m/t: is 1.83 ev.
[Abstracter's notei Complete translations]
Card 2/2

ALITEV, B.D. ;_ALIYEV, G.M.
Effect of cadmium impurities on the thermal and electrical con-
ductivity of selenium. Izv.AM Azerb.SSR.Ser.fiz.-mat.i tekh.nauk
no.5:85-90 160. MIJIA 14:4)
(Selenium~-Thermal pr9perties)
(Selenium--Electric properties)
(CadmiumY

ALIYEV, G.M.; ALIYEV, B.D.; HERIMOV, I.G.
Temperature dependence of the thermal conductivity of selonium
with an admixture of cadmium 4.i4 Azerbaijani Nith summary ir.
lineqlan]. Izv. AN Azerb. SSA. Ser. fiz.-mat, i tekh. nault
no.6:99-101+ 160. Wfti 14:8)
(Selenium-Thermal properties)

36796
S/137/62/6CO/004/058/2001
A052/A101
AUTEORS: Barkinkhayev, 10i. G., Aliyev, 0. M., Kerimov, 1. G.
TIT1_': The effect of gallium admi~:ture on electric properties c:1 pure se-
lenium
PERIODICAL; Referativnyy zhurnal, Metallurgiya, no. 4, 1962, 50 - 51, abstract
4G331 ('7--v. AN AzerbSSSR. Ser. fiz.-matem. i tekhn. n.", no. 3, 1961,
63 - 74, Azerbaydzhanian summary)
TMU: The effect of Ga on electric properties of pure Se was rtudied as
well as the possibilit- of substituting by gallium the haloid admixtures applied
at present in the industry. The ~e used had a purity of 99.9996%. Ga was intro-
duced both as GaSe and in the.metallic form. When producing Ga and ce samples, a
neehanical mixture of Se powder and mntallic Ga was charged into ampuales, which
were evacuated to the pressure of 10- mm mercury column and placed in a muffle
-zrnace where the temperature %..,as gradually raiued up to 8000C. The exposure was
It hours and thereafter tho mixture was cooled vilth the furnace. Whcrv preparinS.
Se and GaSe samples, the mechanical mixture in evacuated ampoules wa.-i heated to
1,1000C. The electric conductivity was measured by a sound method in the tempera-
Card 1/2

S1 137/62/00/004/058/201
The effect of gallium admixture on... A052/A101
ture ranze of 20 - 2000C both on pure Se samples and on those with 0-:25, 0.5, 1, 2,
3 and 4 weight 115 Ga. It has been shown that with an increased Ga cor,,.entration
the electric conductivity increases, reaches maximum, and then drops. At 41% Ga,
added in the form of GaSe, Se changes metallic character of conductivLty into semi-
conductor one. The electric conductivity of Se sm,,ples with a metallic Ga admix-
ture increases with the temperature. The differential thermoelectronotive force
was measured in the temperature range of 20 - 2000C. At indoor temperature the
Ithermoolectromotive force of Se is 9141iv/degree, and it drops rapidly with the
lncrea~~e of temperature. Samples with a Ga admixture have a hole type conductivity.
GaSe and metallic Ga admixture8 change essentially the course of the temperature
dependence of the thermoelectromotive force of pure Se. The thermoe:.ectromotive
force of Se with a Ga.Se and metallic Ga admixture increases essentia:.ly with the
&. A.
temperature. The hole mobflity in ~e with a GaSe admixture Increase:i with the
-temperature, and in Se with a metallic Ga admixture it decreases up :o 700C and
increases with a further increase of the temperature.
B. Turovskly
[Abstracter's note: Complete translation]
Card P,/P

V'~700
. 38.360 S/058/6Z/C-)0/005/085/1'19
A061/A101
AUTHOR3; Aliyev, B. D., Aliyev, 0. M., Nerlmov, 1. G.
TIME: Effect of nome metallic impurities on electrical and thermal proper-
ties of hexagonal selenium
P=-ODICAL: Referativnyy zhurnal, Fizika, no. 5, 1962, 29, abstraot 5E231
("Izv. AN AzerbSSR Ser. fiz.-matem. i te*,Khn. n.", 1961, no. 4,
37 - 44; Azerb. summary)
MIT: It is shomi that Bi and Cd Impurities up to a speciMs content
(o.o4,5' Bi and 0.125% Cd) reduce the thermal conductivity of Se, bul, raise it if
their content is increased further. Bi, Cd, and Ga impuri:ties raiije the oleo-
trical conductivity of Se. Ga raises it to a higher degree than B.''and Cd. Bi
and Cd impurities reduce the thermo-emf of Se, whereas Ga raises ill;. The thern.0-
emf of both pure and im-purity-containing Se grows with temperature, The sign of
-,-he thenno-erif of both - re Se and Se containing Bi, Cd and Ga inpurities, is
A. PU
indicative of the hole ineehanism of the carriers.,
[Abstracter's note: Complete translation]
Card 1/1

ALIYEV, B.D.;.,ALIYVf,--G--M-:-- KERIWV, I.G.
Effect of a gallinm admixture and tempr-rature on the thermal con-
ductivity or amorp~ious and crystalline selenium. Izv. 0 Azerb.
SSR. Ser.fiz.-ma.. I tekh.nauk no-5:39-43 '61. (MIRA 15:2)
(Selenium--Tbermal properties) (Gallium)

ALIYEV, G.M.; ASKFROV9 Gh.M.: KERIMOV, I.G.
Effect of a sulfur admixture on the electric propertie:i of selen-
ium. Izv. AN Azerb. SSR. Ser.fiz.-mat. i tekh.nauk no-5:45-49
,61. (MIRA 15:2) '";II
(Se3enium--Elactric roperties) (Sulfur) 'I

3A 1,2
Z/019/62/0191/005/001/001
0 DOOG/D102
AUTHORS: Aliyev, G.M., Abdullayev, G.B., Ba:-kinkhoyev, Kh.G., ct al.
TITLE: Electrical properties of pure sele,iium
PEXTODICAL: Prehled technicke' a hospodar"skel literatury. Energetika a elektro-
technika, v-'# 19, no. 5, 1962S 199, abst.-act # E 6'2-26'11. Maruzalar
Dokl. 7, no. 7, 1961, 569-573
TEXT: The author starts from the proven fact that the concentration of
holes in selenium decreases and mobility incretses with increasing temperature.
This phenomenon does not conform with the semiconductor theor-y-. The conducted 14/
experiments show that this discrepancy is clos(ly related to the chemidal purity il.
of selenium. Diagrams show the curves of the cependence of electri.cal conducti-
vity of Se (99.994%), Se (99.996%) and Se with small admixture of:-Ag and Si.
These curves demonstrate that the decrease of (Jectric conductivit-1, with increas-
ing temperature depends on the degree of puriv-. The dependence of' thermoelectric
force on temperature was also verified. The o-I.Aginal article contains 4 figures
and 16 references. ZA-bstracterts note: Complet;i translatiogn.
Card 1/1

ALIYEVI B.D,j ABDULIAYEV, G.B.; ALIMt PA.; MIWVj I*G.
Electric properties of selenium vi-~.h a gallium admixtuiv. DoU.
AN Azarb. SSR*3,7 no. 3sl9l-196.161., CAIRA 34t 5)
I* Imstitut fiziki AN AzerbSSR,
(Seleniuz~--Eieotr-lc properties)
0
i,

o A052/A101
ilb"11 HNS: Aliyev, G. M., Abdullayev, G. B., :3ark-,'nl:ho,,ev, Mi. G., Kerim ov, 1. 0.
T TIP T_r Electrical properties of pure sele:.Aum
FERIODICAL: Referativn3ry zhurnal, MetallurGiya, no. 4, 1962, 51, abstract *-'32
j
("Dolkl. AN AzerbSSR", 17, no. 7, 1~-51, 569 - 574, Azerbaydzhanian
summary)
Measurements of electric conductivity and thermoclectromotive force
ef 019.999S);.7 pure Se were carried out. The electric conductivity a-,)f pure Se de-
creases with the increase of temperature from iadoor to 1500C and tnen starts
increasing. The decrease of crat'temperatures Ip to 1500C is explal.ned by the pre-
vailing effect of '%.he decreased mobility over t1ae increased concentration of cur-
rent carriers. The thermoelectromotive force at indoor temperature was q14/4,v/cbUw
c,nd it dropped rapidly with the increase of temperature. The therm:)electromotive
force was measured by the compensation method. The concentration of' current car-
riers at indoor temperature was 5.70 - 1015 am-3. The measurements were compared
with the data obtained or. cq.994% pure Se. There are 16 references,,
rAbstracter's note; Complete translation] A. Gubenku)
Card 1/1

33678
s/o58/6 i/OX,10 i P-/048/083
Yf A058/A1Ol
AUTHORS: Allyev, B. D,,,.Abdu3.layev,.G..B., Atlyev, 0. M.,,Keftmov, G, 1,
TITLE: Electric properties of gallium-dopel selenium
PERIODICALl Referativnyy zhurnal, Fizika, no. 12, 1961, 359, abstract 120181
(Dokl., AN A:zerbSSR, 1961, v. 17, x:j. 11. 191 - 196, Azc.rb, sunimary)
TEG: The effect of gallium-doping on the electric conductivity 6 and
therLno-emf a of Se 'was -initestigated-. Doping wit q up to 0 - 125 wt % 01, causes 6 of
Se to increase almost 160 times, after which 6 ilowly decreases with increasing
Ga content. c(,of specimens with different Ga ccatent was measured in.the range
200- 20Q0C. The sign of oC always points to p-lype conductivity. Ue tempera-
ture dependence of hole mobilityup for differert Ga content is plo~;ted, In spe-
cimens containing 0.125 wt Ga,'
,4p at first de(reases sharply, then remains cor-
stant. In the rest of the specimens,/itp increases with temperature,
B, 011khov
[Abstracter's note: Complete translation]
Card 1/1

BARKINKHOYEV; Kh,Ge; ALIYEVO G.Mo .
Electric properties of selenium -)f varying purity in 'the
solid and Liquid phases. Izv. AR Aserb. SSR.Ser. fiz.-Mat.
i tekh. nauk no.3t95-101 163, (MIRA Mill)

VELIYEV., M.I.; KERIMOVp I.G.; _ALIYEV.*_.R!~~.; ALIYEV, M.I.
Effect of ar7stallization cn the heat conductivity of sillenium.
Izv. AN Azerb. SSR. Ser. fiz.-mat. i tekh. nauk no.4-33-.36 163.
iHIIIA 16:12)

ACESSION NR: AP4021708 I/633AVOW/000i'007i/0078
AtTHOR: -Darkinithoyevi Xh. G.; Amkerow, Ch. W; a,-
,*IY44 A
TtTLZ: The effect of vi mercury admbdure on the electric properties of
selenium
SOURCE: AN* Aze rbSSR. Isventlya. Serlya fts. -matem. i tekhn. nauk, no. 0,
11963, 73 -78
"TOPIC TAGS: mercury. mercury vapor, selenium, electric con4tictivity, dif-
fusion factor, componerst suspension., molybdenum ampule, therwoelectrornotive
forc.os doner level, acceptor level
ABSTRACT: Th6 Investigation h%to the effect of mercury impuritlas on the *let.!
tric ptaperties of selenium was promjAed by the contradictory opLni6ns on 11,4,6
subjer-1 pubL-shed in literature. Ito samples involved In the. (oat were mo1rh- .
den.urp. ampulas with selenium rend mercury. Following a special treatmint)~"#
samplAs Were crystallized at 210C for 25 hours. The electric coaductivity aAd..
the i-14 0alectromotive force were then measured by- the oompe nisial.100i Mthod. .
and th-e grapbs were plottedoa the basis al the -mean values of seireral ftiwwurs-
Cwd

ACCFSSION NR: AP4027708
me A.' The same samples were used for measuring the thermoelectromotive
footce In relation to copper,within an B-10 degree gradient and 20-300 C temper-
aNi-e range. The, experimental data reveal that the small concentrations of
mercury atoms in. the selenium tend to reduce its electrical conductivity. This
cao be explained by the assumption that the mercury atoms in the selenium pro-
duce donor levels which Jncrease with increasing impurities, intensifying their,,
compensation of the selenium acceptor levqla. Such an effect of the Impurities
prIor to the full compensation of the oelenthm acceptor levelly, sh*uld leiLd to
a reduced electric conductivity. The increusing temperature relationship of the:
-6oncent ration and the reduced mobility of the current carrier in sislenium are
natural from the point oi'view of the band theory. All the data pLiblished in
literature indicate that the mobility increases and the concentratilm of the culor
tent carriers in seleniwxi decreases with temperature.. But this problem, on
the whole, is still not very clear. Orig., art. hai: 6 ftures
ASSOCIA77CW: AN: AxorbSOR
SUDMT"MD:~'00 D64LTZ AM 17Apr64 ENCLOI 00
SUB CODRS PH. CH NO IWJV 004 07MIIRS 009
CWd all -

k.D.; ABDULLAILY.. G.B.; ALIUV) G.M.
ALIM$
Effect of biomath impurities on the beat condaciivity an!l Belf-diffunion
of selenium. Trudy Inst. fiz. AN Azerb. SSR 3-1:5-10 163,.
(MVLA 16-.4)
(Selenium-Thermal properties) (Bismuth)

ALHEV, B.D.~iALIYEV, G.M.
Effect of a cidmium impurity on the thermal and electric. conductivity of
selenium. Trudy Inst. f iz. AN Azerb. SSR 3-1:19-24 16.1.
(MIRA
(Selenium--Thermal properties)
(Selenium-Electric
16:4)
properties)

ABDULIAYLY, G.B.; ALIM., G.M. ,; BASHSHALMV, A.A.; MRIMOV) I.G.
0
Heat conductivity of some compounds of the type AIIIRV. Trudy Inst. fiz.
AN Azerb. SSR 11:46-51 163. (NIRA 1614)
(Se:niconductors.-TherTaal propertien)

ABDULLAYEV, G.B.; ALIYEV, G.M.; BARKINKBOYEV, Kh.G.
Thermal conductivity of selenium. Fiz. tvar. tela 5 no.12:.1614-3615
D 163. (PEIRA 17s2)
1. Institut fiziki AN AzerbSSR, Baku.

Acc .FsSIGN Nit: AP4005130 S/0249/63/01!;1/008/0009/0013
AUTHOM i Abdullayeva G. B.- AliYOvs G. Me; Barkinkhoyev, Kh. 0.
TITLE: Effect of gailium impurities on the thermal conductivity of hexagonal
selenium
SOURCEi AN A-.erbS!)Ro Doklady*# vo 19# no* 8, 196)0 9-13
TOPIC TAGSs selenium thermal conductivity, selenium, thermal conductivity, hexago-
nal selenium, gallium impurity effect, gallium impurity, gallium, stmorphous seleni-
um, metallic impurity, selenium valve, Ioffe formula, phonon mechanism,' absorption
toefficientp crystalline selenium, nonmetallic impurityp crystal lattices metallic
gallium impurity, selenium doping, phonon scattering
ABSTRACT: The influence of metallic gallium admbtures on the heal; conductivity
of crystalline selenium in the temperature interval of 65-450K has been studied*
Cylindrical crystal agglomerates of pure selenium with 0. 0,25t 0.1,;0,, 1.0, 2.0., 3.4
and 4.0 wt % were tested. Their diameters were 10-12 mm and thoir lengths 10-13 mm.
Tests were conducted under static conditions. To avoid.-adiation heat loss.".
lateral surfaces of the specimens were coated with india ink and carbon black, It

ACCESSIM NR: AP4005130
was found that. at 299K ik reached its maximum for the lJ19 admixture. A ;study of
temperature-A relations for 3 samples brought out the existence of vdmima in the
300-330 ~0range. The electron component of A was estimated to be on time order of
10 -10 cal/cm sec degree. The phonon theory of beat conductivity indicates
that for the Debye temperatures and.above, A is inversely proportional to T:
KaA (1)
T cu - cem - zpaa . 1.
The present experiments confirmed this theory for T between the temperatures of
liquid nitrogen and room temperatLire (with coefficient a varying from 0-75 to 0.98
for different samplos). At higher temperatures (350K) an increase in ?~, reaching
25-300% at 409K, was observed. This increase is attributed to the photon mechanism
and to heat being conducted by electromagnetic readiation. The authors thank 0. G.
Kerimov, director of the heat laboratory, for his interest and valuabla suggestions.
Orig. art. has: 3 graphs, 1 table, and 3 equations,
ASSOCIATION: Institut fiziki AN AzerbSSR (Institute of Physics AN AzerbSSR)
SUBMITTE-Dt 23MaY63 DATE AOQ: 20Jan6h ENCL: 00
Card 2/3

- - - - . --. .-J'
9
ACCESSION NR: AP4005130
SUB CODE: PH
I
NO REP SOV: 015
I
(ITHERs 004
Card 3/3

ASKEROV, Ch,~.LLjnj,_!L.~.A11ffl1JNDOVA, E.G.
Heat conductivity, density, and microhardness of the syntem selenium-
sulphur. Izv. AN Azerb. SSR. Ser. fiz.-tekh. i mat. navk no.2t83-89
164- (MIRA 17:9)

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A
t 141

~,AZCESSION NRt AP4028423 S/0181/64/000004/1018/1022
4UBMS: Abdullayov, G.* B.; Aliyevi_Rt M.; BarkirL-choyvvg Kh. G.; Askerov, Ch. M.;
Larionkind, L. S.
TITLEt Elsotrical properties of crybtallina and liquid selenium after deoxygenatiow
;SOURCE: Fizika tverdogo tela, v. 6, no- 4, 1964, 1018-1022*
~TOPIC TAGS: electric conduotivityl selenium, deoxygenation, thermoolootromotive
forcep solid liquid study
'AB STRACT: -The authors measured-the electrical conductivity and the therm,)eleotro-
.motive force of three samples of So in the tempeis.ture interval 293-7713K. The
1samples were characterized by the following impurity concentrations: '10_3~, 10-4.g,
,and 1075~ for the three samples, respectively. Measurements were made on all t1=ee
samples before deoxygenation (ordinary Se) and on aamples I and 3 aftar deoxygerui,-
:,tion. Different jumps in conductivity were observed during fusion of all three
,,samples of ordinary So. The activation energy of electrical oonduottrity was found
ito be 2-05 ev for liquid Be of -uhis type. In the solid phase, the thormoelootro-
Imotive force of sample I ordinary.Se declined with increase in temperature. During i
Co,d 1/2

ACCESSION NR: AP4028423
Ifusion the sign changed to negative, and in the liq:aid phase it inoreased in
Absolute value. The thermoelectromotive foroe of s=ples 2 and 3 ordinary So in the.
,crystalline state increased with rise in temperature. During fusion it fell sharply'
1(to zero), did not chanpa sign, and increased again in the liquid state. ..Afier
deoxygenation, the condlictivity at room temijfxature doolined approximaUly by a
fa6tor of 100. No jumys were observed. Tho aotivaticn energy of the conductivity- t
.1in such liquid Se becaie 0.6 ev. The therTwelso'.romotive force of samplee 1 and 3
jin the liquid state indicates n-typa conductivity, increasing in absolute value.
jIn crystalline Se of sample 39 no `ahermoel-,otromotive force was observed. It was
observed in sample 1, but the valva wrzt t,.:%Il and corresponded to holti-conduotivity.:
"The authors express their thanku to Profeslor A. Ri Rogell for his interest in the
work and for his valuable hJ-rdc:.,1 Orig. art. hass 1 figures
ASSOCIATION: Institut fl-,iki AN Azerb. SSR9 Baku (Institute of Physias, Azerb.
SSR)
SUBMITTEDi 18Srp63 ZNCL: ()b.
OV'; arms 01
SUB CODEr NO REP S 004
Cara
2/2

ACCESSION NR: AP4039227 S/949/54/020/002/0027/0031
AUT11ORSs Abdinov, D. Sh.; Abdullayevj, G. B.; A3.iy9vj 0. M.
TITLE: The effect of antimony admixture on density,, heat conductivity,, and
microhardness of selenium
SOURCE, AN AzerbSSR. Dolclady*) ve 20, nog 2p 1964o 27-31
:TOPIC TAGS: antimony, selenium, recrystallizationp selenium heat treatment
~ABSTRACT: The effect or antimony admixtures on the physical properties or selenitm,
was studied. The samples consisted of antimony and selenium p)wde-.,a idiced in
various proport ns. These powders wore poured into quartz am:?ules wl-,iich were
.evacuated to 10i& mm lig and sealed. In this state the samples were hoated in an
oven at 850C for 8 hours and cooled to roon temperaturee At this stage the samples
were amorphous. The md-,-~,,,uniments of their heat conductivity and dens1ty were made
before they wers replacc,d i i the ampules and allow(3d to crystallize at K, 130, and
180C for one hour and at 210C for 60 hours* After each crystallizatit,,in period the
,relation between the physical properties of every sampleand its antiniony content
was studied. The variation of the heat coriductivity coefficient or aiii1enium with
Card

ACCMION NRz AP4039227
.respect to antimony concentration at 20-22C is shown in ng. 1 of the Enclosures,
where the conductivity is seen to increase during the transition from the amorphous
to the crystalline state. It decreased with the increase in antimony conto&e., to
0.125,40, beyond ,rhich point it started rising. This behavior sras explained by. the
,hypothesis of V. N. Lange and A. Re Regell JFZTj v. 1. no. 4. 1959) which states
-that small quantities of antimony distort~the crystalline lattice of nelenium,
while larger amounts of antimony have the opposite effect. The variation in the
microhardness, thermal conductivity., and density of crystalline selenium with
7respect to the antimony content is shcwn in Fig. 2 of the Enclosure8e The micro-
hardness zainimum also occurred.at 0.125% antimony content. In order W check the
accuracy of the experimental results, the variation of selenium properties was
.calculated according to the formula derived by A. V. Ioffe and As F, loffo'("DAN
.SSSRII) 1954~ v. 98, No. 5). The theoretical and experimental data correlated
closely. Orig. art* hast 1 tableg 2 figuress and 3 formulas*
ASSOCIATIONs Ixwtitut filiki (Institute of Physics)
SuBmiTTED: l9jul63 DATE ACQ t 05Jun64 ENCLs 02
SUB OODE 1 54 GO NOW SOVI 010 OT=s 002
2/4

i11i!C-~-F1L14MMwM1Mr;1wrff P 9
7 -7-
ACCESSION M AP4039227 F.NCU:6URE: 01
Fig, 1, Relation between.
heat conductivity of
selenium and the 81"UmOnY
r4
M content@
14 hr)
hr)
aelenium, glass
j JIM
Cird 3/4

A=4SION M AP4039227 RNCLOI;VRZs 02
Irig, 2. FAlation or microhardXMISS
heat conductivi
(A), and density
of.selanitm to the antimony
47
4.16 N
V N
4 it is
-Car4 4A

In
wi
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i,4
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i~vjF 4T
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. . . . . . . . . . .

i a , cl n.
OMP C~
Y_
I$' 11a) Tte,
and
61
e at Li tUtL th et ad
iiictxlc,,- cobdu'. C' 1"t era -,.o
'-.creases-
y ftd-thervalllelif- approxAmit It ee f
be:$- 4 effec as ~,eMoVajr of oxygen.. r' jen ~t e ~,G a
MpItU4
:I.
fttrodU6 ~dAnt*'-Ahe se e i c6ndu~ #*it* appears - n. tt b -solid stat e
at -oo-OW
jibe- welting
OS es dt~i- -the-nmabeiandA,6i on
-raq,,Zvor i
*Ogj'sd tb are
We
tb rl~aaiwlbe: v ng-mlt
Plum
no'
02
A$SOMV
)0
17W
A

ALIYEV, G.M.; URICTFUNA, L.S.; WHALLIUM, N.Z*
Production of selenium single cryst-,als. Izv. 0 Azrcrb.SSR.&--r.
fiz.-WI-Ji. i mat. nauk no.41.79-81 164.
(MIRA 181.3)

MEMITI'l'EVA) S.I.; ALjfl~; ABDINOV, 11.6ii.
:.Newly deLected properties of selenum of high purity. Jzv, All filzeib,
.SSR.Sv-r.fiz.-,tek:h. i mqt. nauk no.4L~10-,L-108 161..
UAIM 18,-3)

L 30
U&($).r2/EYJTtM)A N-10/m/Y.Pif "Aym, (,m)/jwwAqP_~b
IIR/0249/65/021/0'
1:ACCESSION JIM- AP5015450 03/0018/0021~
AUTJHO'RS: kbdullayev,~ 0. BO D Sh Aliyev, G. M.,
Abdinov,
V)
TI TL. E: Efrect of oxygen on transport-phenomens, in se lienium of bigb
purity
ISOURCE; AN.AzerbSSRO; Do~ladyv v. .2l.. no. 3, :4~965, 18-21
iTOPIO TAGS.: selenium, selenium reotifier:, thermal conductivity,
electric-conductivity, thermal emf, Hall offect, carrier density,
Hall mob13ity
ABSTRACT., The authors report -results:of Investigatioinis of the inf: u--
ence of arti 0 y impurity, whirh effectively compensates the acceptor
action of n, on the electi)ie propert:Ies of crystallIne and
.!liquid , se I Eni and on the thermal conduol;ivity of crystalline selen-
_~berore and~after 4
~ium of~pu;Lt leoxidation and after
y 9.9999 per aeizt'
oxidation.~ The deoxidation Was,.-.by, the mw~bod of P. 71. Kofzyrev (PTT
on
v..-, 1, 213,L19-50- The'..Procedure~~for measuring electric duotivity,.
and tbe'tliermal coniduotioi-tit'as--'iftno'tiono:,of the impuri4 es and~'.~of ..t~c
cc,
.3

L 35374.6
!ACCESSION 1JR: AP501545o
Itemperaturd was described e*arlier.(FTT v 4 10180 1964 ajA elsewhere
fThe,Hall e,fe o t was measured with.direct current by a corml:ensation
method in it magnet'A'.o field of .20,000 Oe. The article ino:l.:udes a.
0
.]table of the dependence of the electric conductivity,, the 1 thermal- o n
jductivity, the Hall density, and the Hall mobility prior to deoxida-'.,
! C
I tion, and also of tbe electric ac.,nductivity and tberrral a ~,nductivity
iafter deox:Ldation, as fUnction~ of the antimony content, il.nd plots of
I the temperature dependence of the electric* conductivity bii,xc%re and
after deoxLdation. The results.show that -61he antimony hm~ different
e f fe c ts on ~'tbe e lee trio and thermal 'a ondue'tivitie s . be fore i'and af ter
deoxidatio:i, and with: the antimony-content. The jtimp-in.the
loonduotl,viby-occurring at the melting point also depends'.c:;n the~oxyge i
contept. rhe results have a~;_direct b6arirl'g on:the fact tbat. various,
mechdnical properties of selenium rectifiors and photocel]LB are
governed p rincipally, by, tbeir -oxygen content. Orig., art.; has: 2.:
figures an-1, 1 table,
ASSOCIATION: Institut ft z iki,'~ _AN:1.zer'bSSR:' (Institute of Phys ics j.AN
AzerbSSR)-~4
12
i3

L M31-,-66
J~AdCESISION.:,IRm .AP5015

'

UBMITTED:'!

4sep64,
00i

UB CODES,,;
SS

V:
NR REF
SOV
013'
002
'

VELIYI,V, M.I.; ALIYEV, G.M.
Effect of sodium admixturen oij the eleatroconductivIty of selenium.
Izve AN Azerb, SSR. Ser.fiz.-tekh. i mat. nauk no.1:66..70 165.
(MIRA 18:6)

L 32952--,c6 ENT TI IJP(c) RDNAAV
ACC NR- AP6017056 SOURCE CODE: UR/0233/65/000/(;04/0074/0079
AUrHOR: Abdinov. D. Sh. Allyev, G. M.
ORG: none
1kV1
TITLE: Effect of oxygen addiVins on the electrical properties of solenium
SOURCE: AN AzerbSSR. Izvestiya. Seriya fiziko-tekhnicheskikh i mateplaticheskikh nauk,
no. 4, 1965, 74-79
TOPIC TAGS: selenium, thermal (mf, Hall effect, activation energy, Hall mobility
current carrier, electric propeity 11
ABSTRACT: Measurements were maee of the effects of Sb addition& tho electrical con,
ductivity a of Se before and after deoxygenation, aF-7er oxygenaron, as well as of the
temperature function of the Hall effect in the solid and ~~ tates. The work was
t
carried out to fill a gap in thQ literature. The antimony was added as Sb and Sb2Se3
in amounts of 0.05, 0.1, 0.125, ).25, 0.5, 0.75, 1, 2, and 5 wt %. For ordinary Se
(prior to deoxygenation), the a decreases with increasing content of Sb and at 0.5% it
reaches a minimum; with further addition of ~b, it increases. The a was found to be
the same for Sb2Se 3. At 20-2200C, the a prac--tically does not change - At the melting
point, the a drops abruptly. AP:er melting, (starting at 2400C), it rises exponential.
1y with temperature. Activation energies AE, calculated from the slope of the Ig vs
1/2

L 32952-66
_0
A(~6 I~R, A~~Oij 6
vs 11T curve, are affected littlij by small concentrations; starting iit 1% Sb, AE gra-
dually increases and at 5%, reaches 0.52 ev. In melting pure Se, the concentration of
the current carriers decreases fvom 2.27 ,1014 at 2.60C to 3.20-1013 (:M-3 at 3500C and
it continues to decrease with fui-ther heating. Measurements of magnotic susceptibilit,
in the solid and liquid states indicate a decrease concentracion of holes during melt-
ing. Temperature function of tho! concentration of the current carriers, determined
from the Hall effect and the thermal emf, is about the same. At room temperature, the
Hall mobility in pure Se is equa' L to 10.45 cm2/v.sec and is in good agreement with li-
terature data. The mobility of: Iioles in pure Se Prows insignificantly with tempera-
ture in the solid state and in welting it Leops abruptly, but in the liquid state, It*
grows exponentially with temperature. In conclusion the authors thank Professor G. B.
Abdullayev for supervising the work and Ya. N. Nasirov, R. Kh. Nani and V. B. Antonov
for assistance in measuring the Hall effect, Orig. art. has: 2 tables, 3 figures.
SUB CODE: 20/ SUBM DATE: 06Jun64/ ORIG REF: 029/ am REF: 005
2/2

ACC NR, AP6005610 SOURCE COYZ: UR/0233/6-5/000/00
AUTHOR: Dzhalilov, N. Z.; Uiyev, G. M.
ORG: none
00901/0095
TITLE: Electric properties of sclenium SILTI :1e crystals
SOURCE: AN AzerbSSR. Izvestiya. Sorlya fiziko-telchnicheskikh i natematicheskikh nauk,
no- 3, 1965, 9U-95
TOPIC TAGS: semiconductor, selenium, selenium rectifier, semiconductor single crystal
ABSTRACT: Conductivity of Se crystals obtained from vapor and from melt was measured
at -170 4215C, in vacuum (0.001 torr), in darkness. At room temperatui,e, the
conductivity was 2.3 x 10-6 and 1.1 X 10'7 mhos/cm for vapor and melt crystals,
respectively. Curves of'conducti~rity along and across C-axis v9. temporature are
shown. The above data is comparel with that avialable from Soviet and Western
publications of 1938-64. Orig. a,-t. has: 4 figures and 2 formulas.
SUB CODE: 09 / SUBM DATE- 1OMar65 / ORIG REFt 013 / OTH REF: 014
Card 1

39586-66 EWT(1)/E'A(T(M)/E'M(f)/EWr.(z)/T/EWp(t) IJP(c) Rl)#/JD/GD/GG/GS
ACC NR: AT6001330 SOURCE CODE: UR/0000/65/001:1/000/0027/0029
AUTHOR:. Aliyev, G. M.; Larionkina, L. S. Dzhalilov, N.Z.
AES029== '.~ 40
'k-L'cr-~_0 led
TITIX: The production of selenium sin..le c ystals_
SOURCE: AN AZPrhSSjj. Tristitut fiziki.. Selen, tellur i ikh primeneni.ye (Selenium,
tellurium and their utilization). Baku, Izd-vo AN AzerbSSR, 1965, 21,1-29
70PIC TAGS: selenium, single crystal growth, single crystal production, growth
crate, pressure dependence, illumination, ultra high purity metal, heat treating fur-
nac~-_
&BSTRACT: Methods of increasiRg the normally slow SMO_wth rate of selenium sinple
crystals were studied. The growth rate is slow owing to the closed chain-like struc-
ture of the amorphous selenium molecules. The single crystals were grown from a
vapor in a vacuum and also unde-r slight pressure of argon or helium. Three tubes
made of Ho glass (50 an high and 3.5 cm in diameter) were filled with powdered sele-
Ilium of 99.99999% purity to a height of about 6 cm and evacuated -to 10 3 mm Hg pres-
sure; two of these were then filled with argon and helium respectively to a pres-
Card 1/2

L'39586-66
ACC NR: AT6001330
sure of 1 atm. All the tubes viere then placed in a cylindrical furnace and heated
to 2600C (a schemirtic of the apparatus is shown). After 8 days at 2600C, the tubes
were quickly removed from the furnace. On the walls of all the tubes, as a result
of the removal from the furnaco, needlelike crystals grew away from the wall toward
the interior and slightly downuards. After crystallization, the tube walls were
covered with a red deposit in the case of helium and argon and with a gray deposit
for the vacuum. For the vacutyi-grown crystals the needles were sho:rt and cactus-
like, while in argon and heliwi the growth was typified by a uniform density of
needles of lengths varying frai 0.5 to 1.5 an; in helium the needles were slighi v
longer. An x-ray rotating pattern of a needlelike single crystal of selenium is
shown. The increased growth rxite of the selenitmi resulted in the longer crystals.
The lack of data on tho the:.Tna.L, electrical and photoelectrical prress their gratitude to for the x-ray
pattern. Orig. art. hits: 3 Agures.
iSUB CODE: SUBM DATE.- IONar-65/ ORIG RM 002/ OTH REr: 003
C ard 2/2 Ilb

L 049-71-67.
AC&~~023950 "&R ~5~_ i1-03 Y16~ /6. io 1606 /0 66510(
AUTHOR: Ahundovaj, E. 0.1 Askeroirp Cho Me, Aliyevp G. M.; Abbasovy R..G.
ORGI none
TITLEI Effoot of sulfurTZhiorim"and dysprosium Impurities on the oli)otrioal oon-
d2g~ f hexagonal 61 liquid'solonium
(41 -V1
SOURCES 'AN AzerbSSR. It,r. Ser fit-tokhn I matem. np noo 69 1965, 69-?%
TOPIC TAGSs gulp"r p.,eh~qane $ dysprosium, semiconductor conductivity, solenium_,
ABSTRACTt In order to clarify the influence of impurities on the forription of current
j&f(the effect
and the jump In the electrical ocnduotivity or of selenium on A21ti , of
a] wtivoli 59.999 and
S, C1 and Dy theT of soloniwi of brands B nd 34 (rasp(
I ~n the hexagonal modification and In the liquid ate..to 'including the
99 -9999UJO
melting range as studied. Fig. I shows the curve of 6 vs. the concentration of impu-
a
itios. It is seen that By increases d by a factor of 10., and that tho higher the con-
centration of Cl, the more slowlir or reaches a mocinum. Thi:3 indicate:i; that Djr irpuri-
ties can be studied in the produotion of selenium rectifier3 and can be used to re-
place the volatile Cl IMurities, Cl strongly increases d in B4 solmtium, wheyvas 5
strongly decreases it. AstuO Df the temperature dependence of(I shrwed that dr In
the solid state and its Jump an ~nelting change subtitantially with the impurity coacon-
.trationse C1 aato like co7genj creating acceptor levels in Se, and thus inores-;ies
Card

b~
L o4971-67
AC(f
950
the curont cuTier concentration szA herxe I . 7he decrease in a' ca-.ised by S is
apparently due to the fact that the acceptor action of MIgen is Part~), offset by Sul-
fur impurities, which decrease the carrier concentration and hence 0. The jump in a
on malting is due to the presenc,i of impurities in selenium which aftei- meltinig become
inactive. 7h conclusiont authors thank Prof. 0. A, Abdullayer for his steady Interest
and useful suggestions. Orig. axt. has 5 fiFr-es, I UVG-a I formitla.
Fig. 1. Ele^,tAeal conductivity of selenium 10 .4
vs. concentration of C19 S aul Dy impurities$
1 Se+%M; 2 - So + %S; 3 Je +
SUB CODEz //~20 SUBM DATEs none/ ORIG RM 008/ OrH REFt 009

M
T (m )/E_4 P (" tA- T IIJF(c)
I 1,3MI-66 __Ei RDW JD/,rj
ACC NR: !~P6017058 SOURCE CODE: UR/0233/65/000/004/008ii/0089
:AUTHOR: Vell'yev, M. 1. Aliyev, G. M.
ORG: nooe
TITLE: Ef-lectl- of sodium on the heat conductivity and density of selerium
SOURCE: AN AzerbSSR. Izvestiya. Seriya fiziko-tekhnicheskikh i matemE,ticheskikh nauk,
no. 14, 1965, 84-89
TOPIC TAGS: selenium, heat conductivity, sodium
ABSTRAM Density (6) and heat conductivity Q0 measurements were made on Se (99.9999
purity) containing 0.034, 0.17, 0.34, 0.85, 2, 3.4 at % Na. The tempi~rature function
0.
of A is expressed by X,~-T . For amorphous Se, A has a maximum for 0.17 at % Ila and for
crystalline Se, X has a minimizi for 0.34 at % Na, after which the pro:,ierties of both
approacb those of pure Se. Th,t absolute values of a decrease with an increase in impu
rity content. With the additi,.)n of up to 0.034 Imt % Na a increases (,o 0.153 g/CM3 ;
further increase to 0.85 at % decreases a to 0.068 g/CM5. Measurements of x-ray and
pyncno-metric densities of polycrystalline Se and the addition of Na confirm the assump
tion that the Se has vacancies and pores. Orig. art. has- 3 formulas, 2 tables, 2
figures.
SUB CODE: 11, 20/ SUBM DATE: IOMar65/ ORIG REr: ow OTH ixr: 002
~Szrd 1/1

WW
RDUI/,,
;L 96586 66
C NRt 3.1427 SMCS COD'Et tW0020/66/167jI.004/0782/07%
AUMOR: ALIM _Ao M*; D. Sh.;'Mekhtiyuva, S. I.,
ORG , Institute of Pbomics, AaideW of Sciences AzerbBSR (Institut fUlki Akademii$'.
naukAzexbSOR)
TITLE: JldtaLui as a p6l*zver. iiemiconductor mid the mecbanism of its ~oonductivity
SOURCir. -784
AN BOM DAladys vo! 167p no. 4p 1966) 782
ITAIM s seleniump' polymer': structure., semiconduat*ad'-wep samiclinductor. con-
ductivit; thermoelectric pme.rp HaU,effectp liquid state., carrier diknsity.,Ac.4,4C_
tRAM In view of the fact~that the mechanism of condu ivity of iielenium.hau
not been fulky explained and.the contradicUoryp U-1; the Iniluence
experimental data
on the electrical propertites of selenium
of different lt#?) espect" oxygep
,..has not been =fted j nor 1*0 - th6--meltifik ot selenium. and its liqu1jV ielvate
:.studied Ahe-autbors present~$6!_iesat.3 -of &%comprehenskwlnvesti~atlton of-the elec.
tric conductivity,, thermoelectric power# and Hall effect in solid and'liqiAd selenium
(from &to 45o*)j, including the melting region, :The experiments were made with -very
pure selenium -type B5 (99.9M,~%) before and after removal cf oxygenj, ~ and mith dif-
ferent d0grees of oxidation anfl:with different amounts of omygen-compt=ating inpuri-
ties (Sbp Cd~ Mn) The electric conductivity (a). of solid and liquid selenium in-
creases with the temperature expontatially,, and experiences an abrupt decrease during
melting,;~11 The carrier density is found to be independent of the temperature (-102,5.
cd* 3) -2he jumplike decrease cf on melting is due both totho.dectitase in the
Cj~rd 3/2 1 UM: 621-315492o2: %6.23

W. ju~63.1427.
conce'.,Aration and a decrease in the mobility* The constancy of-the ceirrier density
Indicates that the crystalline--and liquid selenium are iopwity semicohductors and
all the. a nized, Removal of the oxygen decreasetjr~ the conductiv-
A i c~oth'ec'discontinuity at the melting point. S.Iim~ilariy
ination o1! the oxygen elimlmttis also the Hall effect. It is concludtid that the
)n
eliminati(, of o3Wgen is &O'Coriq, ed by a decrease in the carrier dewity by -100
times andAn the carrier mobil1ty W -10 times, If is therefore a0sulied that the
oxygen at(os in the po4rwei~chain of selenium produce acceptor cerrtwv thus in-
creasing J"he hojeLdensitY2 and+ '' decrease the intermoleculw bayTiers) 1~hu 0 increasing
the carrior mdbi3-1tj-., It In tt~erefore concluded that seleniump Me i*ganio sami-
conductor-O ive t
is.very, sensit o the method of preparation anti beat tti tmenti lbe'r
authors v0, grateful to P~Mresfl or 4. B. Abdullwev for directing the Vork end Doctor
of ftsiciLl-Mathematical Scien6oe M. If, Klinger for valuable imWice, )ThieLreport
wited by. Academician V41 A* X&rgin 23 aj]YLX Orig. art. a 2 figure
q65 h
pres
SU 1 fOM dA.
MWCODES' 20/ sum wa L OJYL 00.9
DE M I
4~-
T.,

L 0725M7 d)/EWT(m)/R I
_J. I WE"M
__.. _P RH O23,W6U/O8A-i/e0_7T&*4]
AdIC NR, A16028% IJP(c)* M SOURd" 6
~AUTHOR: Abdullayev, G. B.; Mekbtiyeva, S. I.; Abdincry, D. Sh.; Aliyev G. M,.
!ORG: none . .........
TITLE: New properties of high jurity Seleniun
SOTACE: AN AzerbSSR. Izvestiya. Seriya fiziko-tc--khnicheskikh i matemitticheskikh rauk,
no. 1, 1966, 77-84
TOPIC TAGS: selenium, chemical purity, oxidation, thermoelectric pover, heat conduc-
tion, physical diffusions activation energy, semiconductor conductivity
AMSTRACT: In view of the fact "uhat many properties of selenium are titill not under-
stood, the authors,4iave chficked on the hypothesis that many of them tire due to the
presence of oxygen", bnd oxygen cDmplexc.14,4~