SCIENTIFIC ABSTRACT ARONOV, B. M. - ARONOV, D. M.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000102120013-1
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: June 6, 2000
• Sequence Number: 13
• Publication Date: December 31, 1967
• Content Type: SCIENCEAB

ARONOV, B.M,; WMAYEV, B.I.
Determining the gan-outflow angle from a plane
turbine cascade
of profiles, Izv,vysouchebetav*; av.takh. 7 no.
1:75-84 164
(MIRA 17,5i

ARCNOV-, B-.-re - - -
ARONOV, B.V. Compressors in the mining Industry Uchabnik
dl-ia kursov masterov
sotstrudat Kharlkov, Goo* nauche -takhno lzd-vo UkraiMt
1938. 367 Po (49--37829)
TJ99O-A7

A- - 11-111, 71 "
- - ~ . j - - - - - - - - -- - -
Compresred Air
Quantitative losses of enorl, of --,ompres~iad air In mincs., Prom.
onerg., 9, 1;0. Op 1952-
,y
Monthly List af Rursian Accessions, Library of C-n--res.:, April
V)52- trl'CLASSIFIED.

-- .... . j~- -I,wv , 0. in. , mllmu~ylrv. 13. 1 . ~ I'

L- 10906-66 EIM f01wp (y)
(mj&R(w)L
UR/0147/65/000/004/0109/0117. i_
ACC NRs AP6003190 4-SOURCE CODE:
AUTHORs Aronov, B, M,
ORGS none
TITLEs Determining certain geometric parameters of turbine cascades
SOURCE: IVUZ. AvLatsionnaya takhnika, no. 4. 1965, 109-117
TOPIC TAGSt turbine blade, aircraft turbine engine$ blade dalculatton
ABSTRACT: The u:e~ii~f electronic computers inatead of graphic methods
for turbine b1, d kcalculation requires preliminary determination of
the following geometric parameters (see Fig. Os
Xdw d "a and
To determine the dependence of these parameters on other known turbine
blade characteristicag-measurements were made of,a series of blade
cascades of various types of.aircraft turbine engines. Formula& %fare
UDC: 62.135

L 10906-66
ACC NRt AP6003191
Figs 1. Basic elements of a tur-
bine blade and cascade
Center linel B - cascade front
d
.jL,;

ACC MRs ~ AP6003190
derived for maximum blade tfilckness, blade profile area, inlet edge
radius. inlet and exit angles, and blade angle. The
Interrelationship;,
of geometric parameters was found to be the same for both nozzle
and I
rotor blade cascades, Orig, art. has: 5 figures and 23 formul.as6
SUB CODEt 21/ SUBH DATE: WOO/ ORIG REFt 003
ATD PRESSt 4//'7,1,,
turbine blade
313

84-8-19/36
AUTHOR: AronoV., D.,, Engineer
TITLE: Cost Reduction Possibilities in Aerial Photography
(Istochniki snizheniya sebeetoimoisti aerorotos"yemoahnykh
rabot)
PERIODICAL: Grazhdanskaya. Aviatelya,, 1957P Nr 8,, pp. 28-29 (USSR)
ABSTRACT: The article analyzes cost components and indicates where
and how they 'can be reduced, The finished product of
aerial photography consists of aerial negativess, contact
prints,, and the repmIuction of uncontrolled mosaic. It
is measured in square kilometers of the area photographed,
After the approval by the 0TK* the product in forwarded
to the customer at fixed price rates, The basic quanti-
tative efficiency indicators are the number of square
kilometers covered and the profit from the delivered
product. But the main qualitative indicator is the coat
per square kilometer surveyed. The main way of cutting
costs is to raise productivity. Productivity depends on a
number of factorep such as the training level of the
crews, their experience# cooperation, the technical fitness
of the flying stock, instruments, and photographic
Card 1/ 3

84-8-19/~6
Cost Reduction Possibilities in Aerial Photography (Cont.)
laboratory equipment.9 the distance of operational air-
fields from the areas to be surveyed, etc. To out cost,
it is necessary to Improve the productivity of every
single flight. In case of work areas scattered over long
distances, it is advisable to use loaal airstrips as
jump-off points. Daily delivery of exposed filmstrip to
the base airfield in many instances can be accomplished
more economically by regular airlines. Another possibility
of economy is the elimination of waste# which causes con-
siderable expense in repeating flights, Minimizing waste
requires a careful preparation to ensure correat lighting
and atmospheric conditions and the right times for start-
ing and ending the daily flights, The operators already
have learned to avoid light spots and halos in working
with wide-angle lenses. Fogging of lenseacan be easily
avoided by opening the camera hatch right after the take-
off. Many defects can be corrected or eliminated by
Card 2/3

84-8-19/36
Cost Reduction Possibilities in Aerial Photography (Cont.)
proper laboratory treatment. The central light spot in
exposures with the RodIna-2 lens can be eliminated by
overproportional clearing of negatives. Test flights
for checking equipment, spealal instruments, and film
can be combined with traliLing flighti of the crew. In
many places it is possible to out the meteorological
flights because of the existing network of permanent
stations and the customers, field parties. Technical
maintenance expense can.be reduced If the crew membors
are able toaceomplish the work locally,, without fl3ring
the plane to the base. Economy is possible also in the
consumption of photographic and chemical materialso as
well as in cutting the time of laboratory work in the
field by improving the efficiency of workers. Currently
the laboratory work drags an up,to 6 weeks after the
completion of flights.
Library of Congress
Card 3/3

ARMOV, Do# kand. takh. nauk.
~ ~Is it possible to prevent the knocking of carburetor
engines?
Avt. transp. 36 no,12tl6-19 D 158. (MIRA 11t12)
(Automobiles-SIngines)

ARONOV D kand. tekhn. nauk; BORISOVv M., insh.
Now standards for motor oils, Avt. transp. 42 no.lltlS-21
N 64. (MIRA M12)
1. Nauohno-iasledovatellakiy inatitut avtomobillnogo
transports.

t743 0 0 /0 V -3, 88746
S/166J60/000/006/006/008
C111/C222
AUTHORe Aronov, D.A.
TITLEs On the Consideration of the Voltage Drop in the
Interior of the
Semiconductor in Diodes With a Crass p-n-Junction
PERIODICAM Izvestiya Akademii nauk Uzbekskoy SSRf Seriya
fiziko-
matematicheskikh nauk, 19609 No. 6, pp. 68 - 77
TEXTe The author considers (figure 1) a crass p-n-junction
appearing by
a malting of indium into a germanili% seViconductor if the
concentration of
the holes in the p-region (PP e,,IO'Yom-.,;) is much greater
than the oon-
centration of the elsotrons in the n-region (nnA.,1014 + 10
15OM-3). por
the oalculation of the volt ampere-charaoteristio of the
diode under
consideration of the voltage drop in the interior the author
obtains
(18) V a V + V 0 kT In 6 +
p-n T 0 + SJO
Card 1/4

S1166 60/000/006/oo6/oos
CIIIY0222
On the Consideration of the Voltage Drop in the Interior of
the Semi-
conductor in Diodes With a Cress p-n-Junotion
(18) p(d) + b- N
+ T - kT b - 1 1n b + I
eu p(b + 1T e b + I P(0) + b N
b + I
where V p-n is the voltage drop for the p-n-junption, V T is
the voltage drop
in the interior ;-N and p are the concentrations of the doner
and the holes,
e is the charge of the electron, u is the mobility of the
holes, B in
given by p IV
(16) + - P (0).
p CO- F+-N
and Y is given by d dx
(17a) T b
b + I
Card 2/4

88746
S/166j6O/OOO/OO6/OO6/0O8
C111/C222
On the Consideration of the Voltage Drop in the Interior
of the 39mi-
conductor in Diodes With a Crass p-n-Junotion
turthermore it holds
D
eD P ch A +-+- sh
p n L aPL
L oh A ch d
L L
where Bp u 9.* Is the offootive Yslooity of the surface
ro-
p P
combination, L is defined by
(7) i- . _L (b + I)p + bN
L 2 L2 b(2p + N)
L r is the longevity of the holes 1 d - compare figure 1.
p 5p TP pp
Card 3/ 4

88746
S11661601000100610061008
C111/C222
On the Consideration of the Voltage Drop in the Interior
of the Semi-
conductor in Diodes With a Crane p-n-Junotion
metal metal
The author considers the limiting oases of the formula
(18) for low and
high injection levels.
The author mentions V.I. Stafeyev. There are 2 figures and
8 references$
4 Soviet, 2 German and 2 English.
ASSOCIATIONt Fiziko-takhnicheakiy institut AN Uz SSR
(Physicotechnioal
Institute of the Academy of Sciences Uzbekskaya SSR)
SUBMITTEDs March 11# 1960
Card 4/4
Figure 1. Scheme-of the diode

ARONOV, D. A.
Cand Phys-Math Soi, Dies -- "Development of the theory of
semi-
conductor diodes operating in statio and dynamic,
conditions".
Tashkent, 1961, 15 ppo 22 am (Aoad of SoL UzSSR. Phys-Teo
Inat.
Dept of Theoretical P 175 copies, Not for sale (K1, No 9,
1961,
P 174, No 24245) - Z61-1 85 ~ t,27-

AVAXIUNTBp Mel M010101TOWAYSVp PA,
Myeres, volt-ampro characteristic of 44mdoozductor
diodese File
%verstela ) nosP3400-U10 W 164~ (NnA 3,4t6)
1, Fisiko-tekhnicheekLy institut Akadwdi nauk UsWRp
TAIMSAto
(Volt&mstry) (Oormnium diodes)

S/166/62/000/004/008/010
B112/B186
'10 11
AIPTIIUR: Aronov, Do A#
TITLE: Theory of the I-V characteristics at diffusion p-n-
junctibno
?EAIODICAL: Akademiya nauk Uzbe~skoy SSII. Izvpatiya. Seriya
fiziko-matematioli"kikh nauk, no, 41 1962, 72-81
TEXT: The author considers the model of asemiconductor with
wide
p-n junction whose homogeneous parts are described by
equations of the
form
dl4/df Ny + dz/d~ zy. (A /K,
dy/d N - z 1, d~/d AO(Nz b)j
.and*whose tranoition region 'is described.by equations of
the form-
dy/d( =N - z (2)
df/d~ .A1(1 + )I/k)(Nz b)
Card 1/4

311661621000100410081010
Theory of the I-V characteristics ... W12[Bla6
For the metal semiconductor contact region the following boundary
condition is valid
(YI . Y1 9A.O)df I
A, Ke" j bie 61 (4)
z
These equations are solved by taking account of the thermal
generation
and recombination of charge oarrierstwhenoe the following I-V
characteristic is obtained:
Card 2/4

S/1 66/62/0`4004/0013/010
Theory of f-he 1-V oharacteriotics ... B112/B186
This formula is applied to the lia.itin,; cases of "thick" and
'Ithln." diod,:-*
It is fount! that the inverse current z.-.ay rise rapidly with
t1je voltagp
becaure the contact re0istance is reduced when the Opaco charge
is
extended withil*, --,. region of variable i;.ipurity
concentrution. Therv) ia
1 figure.
ASJOCIA'21w;: Fiziko-tekhnicheskiy institut AN UzS')'Ix
Uhysico-technical Institute AS UzSISR)
SUBMITT-~-'.): L-A'arch 2z, 1962
Card 4/4

W,
AUTHOR:
TITLE:
0560
a/166/62/000/004/009/010
B112[DI86
Aronov, D. A.
Capacitance and differential resistance of diffused p-n
junctions'
PLUODICAL: Akademiya nauk Uzbekakqy SSR. lzvestiya. Seriya
Nziko-matematicheskilth nauk, no. 4, 1962, 82-91.
TEXT: This paper is a continuation of that by the 'bame
author, published
in the same periodical, on the I-V charact-eriaticr. of
the diffused p-n
junction in Jioden of finite base thickness. It 'is
concluded from,
theoretical considerations that with-low voltage and
a-small vafue of'
kT
lGe the ca-picitance of the p-n junction decreasez3
exponentially with the
k1P
inverse voltage; with high values of 10"'
.7- it decreases cubically and in
1/2
the region of high voltages IV - V KF . With low voltages
the
differeniial resiotance increases with the voltage in a
proportion which
is approximately exponential. The same holds for medium
voltages and
Card 112

3/166/62/000/004/009/010
CapacitanCL' and differential B112/B166
asy%x.etrica.1 p-n junctions; but in the region of high voltagos it
I V1 113.
decreases a3 I Further, diffused 9-n junctions are rtudied under
the conditions of a transparent specimen; the inverse current may then
decrease -viltli increasing temperature (anomalous temperature
dependence),
if ~F K - LK'j =0 ld~ VK. The rooults obtained for the capacitance
show good
agreement the experimental data. There is 1 figure.
ASSOCIATIOI;, Fiziko-tpkhnicheskiy institut AN VzSSR
(-Physico-technical Institute AS DzSSR)
SUBMITTED: ;,larch 229 1962
Card 212

Impedance of diffusion P-n junctions on a minor Variable
signal, Izv. AN Us. SSR. Ser, fiz-mt. nauk 6 no.6:7-1~46
,62. ' (MMA 16;2)
1, Fisiko-tekhnicheaki institut AN UzSSR.
(Juncytion transistors)
(Impedance (Electricity))

Acazam NR: AW25696 S/0166/64/000/002./0042/0048
AUTHOR: Aronov,, D.
TITLE: Volt-ampere characteristic of semiconductive diodes for
high injoction
-levels
SOUXE; AN.UzSSR. Izv. Seriya fiziko-matematicheskikh nauk, no.
1, 19640 42-48
TOPIC TAGS: volt-ampere characteristicj semioonductive diode,
high injection
level., nonequilibrious current carrier., nonrectifying
contact,, vacancy recombi-
,rL~tion,q generation velocity,, ohmic contact,, current
density, transmissivity
IABSTRAZTs Lot s* be the effective velocity of surface
recombinationj pd be the
I
,equilibrium concentration and pn the boundary concentration.
Tha generally used
!boundary conditions for the concentration of nonequilibrious;
charge carriers for t
:a rear electrode for w7 levels of injection seem to reflect
correctly the physics
of the effects occuring at contact. For bigh injection levole.,
tha theory using
this boundary condition agrees with Werimont and does net
contradict the condi-
tion of quasineutrality for large (finite)recombination velocity
at rear contact,
Card 113

ACGFOSSION NR3 APhO25896
From -the general formula of the volt-a;t~oere characteristic
satisfying the condition
of quasineutrality at any points-it follows that the
approximation. pd n pn is
valid only for currents satisfying a certain inequality given in
the paW. For
very large currents this approximation may turn out to be invalid,
since the con-
centrations pd grow linearly with current. The formula of the
volt-ampere charac-
:teristic of the form J w j eV (-Qv may be obtained not only for
the coWition
0 ckT
Pd " Pn for currents where the criteria of quasineutrality are not
disturbed, but
under the condition Pd - f 0) >> pn 0 The Impossibility of
creating transfers
;which have, for high injection levels, a characteristic of the
form J',' exp
I kT
.is related not to the disturbance of the ratio of current density
to the change in
Idensity of the charge of the carrier at contacts but with the
negligible (for low
,values of the parameter s*) non-ohmic voltage drop at contact.
Here the conclusion'
!of the possibilityof creating devices on the prino e of
modulation of the sur-
face recombination volooity remains Yalid, Tile new'dundery
conditions used by,
:Yu. P. Sokolov .(Radiatekhnika j elektroaka., t. Bo 3# 471.,
1963)s aontalrA tho
assumption that (d+O) ;L Pd. This assuvption cannot be considered
Justifiable.
Card 2/3

ACGMION IiRt APLO25696
since it leads to a conclusion on the,independenco of the
concentration pdfrom
tho current, which contradicts the fact of presence of saturation of
the
Dozterovsldy voltage with increase in current. Also,, it contains an
unimown,
paramotor Q, whose physical meaning is not clear. The basic reason
for coinciding
of the tho6ry with experiment in the region of strong currents is
the linear
dependence ofthe concentration Pd on the current., and not on its
constaricy., as was
asserted by Sokolov (op. cit.). Orig. art* has: 17 formulas.
ASSOCIATIONa Fiziko-tekhnicheskiy institut, AN UzSSR (Physical and
Technological
Inutituto AN UzSM)
SUBMTTM a 17May63 DATE AGQ: 17Apr64 ZWLt 00
SUB CODE iM
NOW SOV3 007 OTH&Rt 003
card 313

ARMVp D.A.
Theor7 of volt-ampere characteristics of diffused p-n
junctions.
Izv. AN Us. SM. Bar. fiz.-mat. nauk 6 no.4:72-81 162.
(NIRA 1519)
1. Fisiko-tekhnicheskiy institut AN UzSSR.
(Junction transistors)

S/W/62/000/006/010/W
B104/BI86
AUTHOR: Aronov,_ D. As
TITLE: On the problem of the impedance of diffused p-n junotions-';"
with small alternating signal
PERIODICAL; Akademiya nauk Uzb6k9koy SSR. Isvestiya. Serlya fizilro-.
matematicheakikh nauk, no. Z, 19629 75-86
TEXT: The characteristic of a diffused p-n junction with a base of
finite thickness is determined for the case where a small harmonic
signal.
is superposed on the constant back bias. The object is to clarify the:
effect of the junction region with varying impurity concentration an
the
magnitude of-the diffusion resistance azid oapacitancef as well as the
affect on the charaoterist-fc'. of ~the-ir freqUency _dependence.
Stjrti-njf~
from the-- ay
Card 1/3

S/166/62/000/006/010/016
On the problem of the impedance of ... B104/B186
ON = Ny + 1p,
(2)
(3).
AO (Nz
V/
Oy (4)
(5)
for the n-type semiconductors, lengttWcalpulation leids-to expressions
for the active conductivity and the capacitance. It is clear from this
expression that for broad p-n junctions with a space charge the back
bias
t affects only the diffusion resistance and the capaci-tance, not the'
nature of the fr6quency dependence. The frequency d-epsn'dence6 of or
and
C are determined essentially by the surface recombination eate at the
contact. It is shown that.a. finite junctiozi'width.reduces the
frequency
dependence of the impedance o a'diode with, ~k thin base,*eo that
diodes
Card 2
/3

1*4 J11~1-1-
T
S/166/62/000/006/010/016
On the problem oT,the impedance of B104/Bi86
with diffused p-n-jun6tions are more suitable'for high irequency
devices'
than diodes with f-used junctions, With increase in the surface
recombination rate'~from 0 to ca the resistance of.diodes with
anomalously
narrow junction increases by a factor of (L P/1,.)' where Lpand 11 axe
as
defined in a previous paper by this author (Isy. AN UzSSR9 aeriya.
fliz-matl*
nauk# 1960, No. 1; 1961, No, I).
ASSOCIATION: Fiaiko-tekhnicheskiy institut AN UzSSR
(Physicotechnioal--.Inst.itute AS,U9SR)
SUBMITTED: 10, 1962
L Card.-3/3
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ACT MION ": AP5000863
11, is ihe diffusion lerigth of wriequil it) rat t-j Rr-~Pr~
I-he coefficient in the index of the expone-w lurns 1w to he
I)rn --ti-n-0 ,7-
P in thp -qp~ li., A "VIV W/ 1'.
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v it noucauble change in the n-apffiplent -am-1 Orwo - ip -In
the Intpx -)f thip ex-l-winnnt flhiR -an :-n~;F, -t
2/3

I ~ pul a es The role of the collector In sxicb an amplifier
is p]Fved bv the contaci mvit~. cnp
r'etaJ, (7ontai-ning (I)e harric~r laver the i: ,f "he or the
;,-T) ~,In tl.,T-,
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SI BMITTED: ,',IL)oc63 EINCL: r%i.( (;1 74 C 'P F F,
N It I ~ ~, - ~', ~ ~4 OTHEH~ kw~-
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,-ARPNOV.0 I D.A.--_._
;, I
Volt-ampere characteristic of semiconductor diodes
at high in-
jeotion levels. Izv. AN Uz. SSR. Ser. fiz.-mat. nauk
8 no.It
42-48 164. . (M1RA 17t6)
1. Fiziko-tekhaicheakiy institut, AN UzSSR.

~T NR: AP4038623
S/0109/64/009/004/0716/0723
AUTHOR: Aronov, D. A.; Rabinovich, F. Ya.
TITLE: Investigating the current-voltage characteristic of tunnel
diodes
SOURCE: Radiotekhnika i elektronika, v. 9, no. 4, 1964, 716-723
TOPIC TAGS: semiconductor, 'semiconductor diode, diode, tunnel
diode,
germanium tunnel diode, current voltage characteristic
ABSTRACT: A theoretical study in which a formula (30) is developed
describing'
the current-voltage characteristic is reported; in the cases of
strong degenera-
tion and very low voltages (under the minimum voltage), the new
formula is
2V V
reduced to I - T. i - where I... is the maximum current, V, is the
VM( 2V.
maximum voltage, V is the supply voltage. Tho value and position of
the current
a
Card 1/2

!ACCESSION NR: AP4038623
maximum and their temperature dependence (positive or negative)
are determined;
by the conditions of production of the tunnel diode. This holds
true in both cases:
(a) a strong degeneration and (b) a substantial blurring of the
function of carrier
distribution. The now formulas are claimed to be in g6od agreement
with experi-
mental data. "In conclusion, the authors consider it their
pleasant duty to thank
I. Adirovich for his valuable comments and useful discussion.
Orig. art.
has.- 32 formulas. I
i ASSOCIATION: none
OUZ),NUTTED: 2IJan63 DATE ACQ: 053un64 ENCL: 00
';SUB CODE: EG NO REF SOV: 006 OTHER: 003
Card 2/2

ARONOV, D.A.; RABINOVIGHp F.Ya.
Some studies of the volt-ampere charactW Itico of twmal
diodes. Radiotakh. i elektron. 9 no-4:716-723 Ap 164.
(MMA 17:7)

ARONOVj__D.A.
Some investigntionu of the straight branch of the volt-ampere
charactaristics of diodes with antiblooking tail-end
contacts.
Izv. AN U%.SSR. Ser. fiz6-mato nauk 7 no.501-76 163,
(MIRA 170)
1. FIziko-tekhnicheskiy institut AN UsSSR.

ARONOV, DvA#
Frequency properties of diodes with an antiblocking rear
contact
at high injection levels. Izv. AN Uz.SSR.Ser.fiz.-mat.nauk 8
no.407-31 164. (MIRA 180)
1. Fiziko-tekhnicheskiy institut AN UzSSR,

ADIROVIGEY E.J.;
1%eory of the photoconductivity of n-emicorductcr- 'r;
bv
intenae illumination. Izv. AN Uz.
SSR.6ear.fiz.-mat.nauk 8
no-5:41-52 164. (MIRA 18a2)
1. Fiziko-tekhnicheskiy Institut AN UzSSR.

ARONOVI D~A*
One possible method for controlling the direct current
intensity
in a semiconductor diodes lzv, AN Uz.
SSR.Ser.fiz.-mat.nauk 8
no.5:7MO 164. (MI RA 18:2)
1. Fiziko-tekhnicheskiy institut AN UzSSR.

'w9mNIM;
I
I
. ~ . , I ~ ~ ~. i. , r, ( - I ~, -

~. 4,~ L j"a
~,Ak- -~, '!
" rt 4,
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I , - ~"? .
~ ~ " " av !-
g~
E r WR'm I

L 00269-66 EBG(k)-2/EWA(h)/W(l)/T IJP(a)
ACCESSION M AP5020856 UR/0166/65/OOD/004/
PO~5/1100
AUTHDRSs AronovP Do A Kotovo Ya. P,
TITLXs The differential resistance of tunnel diodes
SOURCEs AN Us=* Isvestiyao BeriA fiziko-matematicheakikh nAd4 no* 4
1965P
45-50
TOPM TAM twmel diodes, differential resistance# temperature effect
ABSTRACTs The effect of fabrication techniques,on the-differential
resistance of
twwel diodes mw investigated so that the negative resistanceep
denirable for
electronic devices, could be more readily obtained* This article
extends earlier
work in this fields, paftioularly by Do A, Aronov and Po Yao Rabinovich
("Radiotekbnika i slektronikap" 99 1964P No- 4P 716), With equations
from this
referenoe expressing the volt-ampere characteristics for electrons
having a long
mean free path# the situation for a oymmetrically degenerate P. and
n-region diode's-.
was ana2yzedo For voltages 'OSeV_