SCIENTIFIC ABSTRACT BASOV, N. G. - BASOV, S. M.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000203910015-0
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: June 6, 2000
• Sequence Number: 15
• Publication Date: December 31, 1967
• Content Type: SCIENCEAB

:STR,-fsF.IIOV","Kj7P G.M.; N'-KIT-!Il, A.I.; 1411KIT111A, TI.F.;
TATARENKOV, V.M.;
TLOIFENSMY, A.V.
lAser operating on a bob-m of hydrogen atoms. Radiotekh. i
elektron.
10 no.10;1809-1813 0 165- (KRA 18:10)

BASOVY N.G.; GWS'Am, A.Z.; ZUBAM, I.G.
Sens.1tivity of a laser operating on neodymium glass. Zhur. prikl.
spekt. 3 no.1:26-31 J1 165. (MIRA 18:9)
.- 1. --, -. , ~ - - -, --
I - -~ - . ; ~;~ ,

L 9461.-66: FBD/EWr(l ')/EEC(k)-2)t/EWP(k)/EWA(;)-2/gWA(h) wrB/ijp(c)_
wG
ACC NNs AP5027406 SOURCE CODE: UR/0181/63/OOT/On/3289/3293
AUTHOR: Basov, N., 4q POPOV Yu. M.
:Bog4ankLivich, 0. V.
ORG. sics Institute im.
P. ~Lebedev,,AN*SSSR (Fizicheakiy institut ANPSSR)
jq
TITLE- Generation of short-wavelength radiation ang lifetimes with
re-spect.to spon
taneouG emission in semiconductors
SOURCE. Fizika tverdogo tela,,v. 7, no. 11, 1 65, 3289-3293
.9
TOPIC TAGS: semiconductor, semiconductor laser, electron beam laser-
eqy
ABSTRACT: The possibility of fabricating electrM.;beam-pumped
semiconductor lasers
generating. in the ultraviolet spectral range, is discussed. The
analysis is* limited.
to direct Interband transitions.and does not include the case when
carriers must be.-
treated as polarons. It is.shown that the lifetime of excess carriers
with respect
to interband transitions,accompanied by emission of a photon is
inversely proportional.,'
to the energy 4idth of the forbidden-gap." -The lifetime of
radiationleis transitions
.is thus neglected in the analysis'. Expressions are derived for the ~
minimal pump
power and the optimal duration of the excitation pulse. It is
suggested thathigh~-
purity ZnS,.aluminum andboron phosphides, corundum, and other wide-gap
semiconductors,-
should be tested for laser action in the ultraviolet by means of
electron beam ex-
cit, gtion Orig.. Prt. hist'' 114ornpilas.' [Cal
SUB COME: SUBM DATE:_28may65/. ORIG REF: 0081. 0TH R": _005/ ATD
Vl-

EWA(k)&EQ &Fr Ck).~I~ 4004 ) 411122(k) 4POW At IMA-(
4964-66

.,
--ACC NRt 'APS027449 SOURCE C07Dis 6Q0l8iA5/0bN1l'j3'460/3~e1

SCTB/Ijp(c) Wd/jP/J7G T11
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t
aro Tuo Po; Ni
eronovi
,AUTHORs Basov, No Go; Zak
ng VOY9, S
.

ORO I phzzics Instl L*'bed*v,-_'AN,SSSR-9~ Moscow Aue4uy-
tu te.

kly~lhstltUt A
N SASE)

-TITLE:, Interaction between.optically coupled GaAs diode
lasers,

SOURCE s Fizika tvardogo teliq v, 7. no. 119 1965, 346063461

-
-
- 11
I in -
d
A
lid
l1
I
l

a a a
as i
at
ium r n
TAGSs, so
a
aser eau
ate ga
TOPI
aser,
99

~
lagar'synchronizat
ions, laser, 'beam,, beam"quenc ins

~-ABSTR M Two systemi.of optical
coupling between p-n GaAs Atodis
'A.
.I .

I .
lasers-'longitudinal." in which laser beaus coincideq and
"transverse,,-

in which they are.parpondicular to each other--i-were
investigated* 0

Y-Parot X080-
both ed'sas, the diodes veto prepared in.the form of Fabr

~_nators
and:set,.up on the same substrate from 5 to 100. ti apart. . The,~

ef
f activeness of beam quenching' f or- the transversely coupled
lasers

.
,
was
was 1%, The wavelength of. quenching laser'emission
grea.ter,

-
than that of the quenched and the~baam entered the quenched; laser

Aaterallyu Beam quenching inllth.a~longitudinally-coupled system was

observed only~when the.wavelengtb of the-quenching emission was
greater

than tbat.of the quenched* Similar effects were observed
elsewhereA,,.".A.

CaM' 1/2'

L 0-66
ian/EWT(12AWP(e)/EWT(m),~EEC(k)!~jt/EWP(t)AWP(k)/EWP(b)/EKA(m)-2/tWA(h
).
L -0'4
ACC N&
ACC N1h AP6=868 SMAM0 WG/JD SOURCE CODEz UR/0181/65/007/012/3639/36hc
, OR.
AMMOR: Grasyuk, A. V.; ZLbarev, I. G.; KaWlin, V. A. 14
[A~
ORG: ics Institute Im. P. N. Lebldev, Academy of Liences SSSR (Fizic
eckly
Institut Akademli nauk W310
TITLE: Laser action in CdS due to optical excitation by radiation
from a IaLbv laser
-77~rYf
SOURCE: rizika tvardogo tela, v."7,.no. 12t- 1965, 3639-3640
TOPIC TAGS.- laser, semiconductor'laser, ruby laser, nonlinear
optics, two photoij.
absorption
ABSTRACT:'.Laser action is reported in CdS excited by a ruby laser at
77X. Since the
energy.of photons of incident radiation (A =.1.T8 v) is smaller than
the width of the
forbidden gap (2.5 ev), two-photon absorption was,responsible for
laser action. A
5 x 3 x.3~mm sample forming a Fabry-Perot cavity was'excited by
radiation from a 1--j
ruby laser (pulse.duration 'u50 nseic). The emission spectrum from
CdB at various
pump densities (see Figo.1) is .similar to that of
electron-beam-pumped CdS. The
broadening of the oscillation line with higher pump power was
attributed to an in-
;crease in the number of modes; however, a resolving power of I did
not make it pos-

Z- I - - .i

B450V N.2j. MCROZOVI V.N.; OHAYEVSKIT, A.N.
:==I-.=
Nonlinear interaction of various kinds of oscillations
in a laser.
Zhur. eksp. i teor* fiz. 49 no,3:895-,901+ S 165.
(MIRA 18:10)
1, Itzicheshy institut imeni Lebedeva, All SSSR.

WOV, N.G.; LETOKHOV, V.S.
Propagation of a light pulse in a medium with inverse
population.
Opt. i spektr. 18 no.6:1042-1046 Je 165.
(MIRA 18:12)

L 10396-66
ACC NR:_','AP5026900
em
uses. ordinary NSSM pumps in-the first
sect ons ands an ion-so4tion titanium pump in the last
section.to achieve a vacuum of 10 torr. Other pa:rts;
4
of QG are::- 4 - quartz teflon-lined bulb,
issonaton 6 - solenoid, for building an a3dal
Im,agnetic field;7 magnetic shield -; 8 -,coupling loop. A
0.01~0.02-sec
mp ng pulse, at a frii4iiii-n'iEi-ib:eresponding.to 21 cm transition,;
produced a
i OU i
;post-radiation for 0.2-M sec. The total estimated and measured
relaxatioi
constant was about 2 per-sec, .which corresponds to a iffetime of 0.-5
me c~ Datao~~_
frequency s%ability and a EtApalsogiven. "The authors wish to thank A.
A
Prokhor~OAd A~ N. OrMiiski for discuosing.the results and valuable
advice;.
and L.- P. Yelidnas G. A. vrelkin, A. N. PSM L. M. Z
Up A. A. U1 'Xinov ak'
MUM 1, 0 fe. I
N. A. Be S. R~376'r4; for their assfA"ci_In the_7Vdjaa.,I. _9
art. has: ex and 6 formulat'01, J_-
r
A..i
!SUB CODE: 20 SU13M DATE: IOW64 ORIG REF: 000 OTH.REF-. 004
Jx
CCWd

BASOV N.G.- ZAKHARCV, Yu.P.-, NIKITIN, V.V.;
SHFRONOVf A.P.
~ A
Laser on a GaAs p - n-J~inctlon wlth nonuniform
WaLributilon
of the Injection current. Fiz. tvar. twela 7
no.100128-3130
0 165. (MIRA 18i11)
1. Fizicheakiy Institut imeni Loebedeva AN SSSR,
~bskva.

~' isAr - , -- I
:4n. ; -~ .-I.; '! Al Fk, p , .".; . 11 , .
Geric:-Ij4.jon in W-, in tion-pYclcr) optl,~ftl Irj
from a niby lf~ier. Fiz. iver. tela 7 no.
12:316icl-liLl it 165
1,
1,1, 1 ~A, 1()31)
1. Ti,-Jiheslkly institut ima:.t 4b~iovn I-N' 71"R,
Mosl,.m.

BASOV. 1.G,; GRASYUK, A.J21.1 ZUBARTW, I.G.;
KATULIM, V.A.
Generation in GaAs in the case of Wo-photon optiml
exeita-
tion by radiation frcm a laser operating on
noodyalun glass.
Pis'. v red. Zhar. eksper. i teoret. fiz. 1
no.4%29-33
My 165. (MIRA 18gll)
1. Fiticheskiy institut imeni Lebed6va, AN S&SR.
Submitted
kpril 16, 1965o

L 23290-66 EEC (k)4/"(b)~&iP(k)/EW? (1)/FBD/T XJF(0) WQ:
ACC NR- AT6009312 SOURCE COE: UR/2504/65/03:L/000/0074/0095-
AUTHORS:, Basov N. Gj Grasyuk,' A. Z. Zubarev, 1. 0'.
T6 ve le v L. - V'
i.ORG16 hvsic 8 InstitiAe im.- P. :.N, Le b
ftLev, Academy of Sciences
SSSR
Fizicheakiyinstitut Akademli,nauk SSSR)
TITLE: Regenerative optic,guantum amplif1gra
SOURCE: AN SSSR. Fizicbeakiy institut. Trudy v 1965.
31-
Kvan't-ovayatradiofizika (Quantum radio physic8l, *'4 -9'
7 5
TOPIC TAGS: laser ap Ii atio image am
p c . n plification, molecular.
amplifier, ruby laser, amplifier design quantum electronicai
electronic
~F amplifier, coherent light,, light emigSiOn
i ABSTRACT; An optical quantum amplifier is definedas a device in
which'
.`-coherent light emission is amplified.by using the laser principle,
and tbe.authors deal with the~properties of regenerative optic
quantum:amplifiers and,way6 of their practical utilization. The
article -is devoted,.to.the,fundamental theoretical relations neces
Card. 1/2

roll Wo
A
-0
MM-M TPA
ACC'.NR:-AT6O0q3l4 SOURCE CODE: UR/2504/65/o3i/ooo/ow/61~8
G
AUTHORS ~Belenov, E..M.; Mark1n, Ye.- F.
X kitin: Orayeirgk1j, A. N.
I ORG., Ph-vaics InstitUte P, 'N, Lebedev, Academy--og W
(Fizicheskiy institut-Akademii nauk SSSR)
)Jd
-of A
n -a gas-mixture lai.
TITLE: -,Investigatio ier
V.
SOURCE*.. -AWSSSR. Fizicheskiy institut. Trudy 53., 1965.;
vantovaya radiofizika"(Qua:ntum,radio physics 115-1
K 38
-laser -r and d, laser beam, laser modulation"'
TOPIC TAGS: gas laser,,
AB TRACT: The purpose or this combined theoretical and
exp6riment&i..i.-,
-to'assess the possibility of increasing the power
i investigation:was
of different gas lasers by aboosing optimal operating conditions
.(pressure of mixture, .-partial. pressures. of the individual
component3,,--1.~1',--
mirror-tra o coefficient, diameter and length 'of
..pump power nsmissi n
The.divergence of the beam and the spectrum of': the"
discharges
venerated radiation'as.,functions of the outward power of the genera-.-
Card 1/2

-66
b23391
ACC NR: ArM6090F,
ng a neon helium mixture and a
tor a.re also Investigated.- UsL
-power of 100 MW A
t
special laser design., , the, authors obtained a
1.15 IL with an optimal:tube radius of 8 mm and len th 3 meters.
9
The angular modulation characteristics were measured as a'funotion
of the output power. Reduction of the beam divergende,by~filtering
out .certain modes is'discussed. Rotating7la6er:apparatus construe-'
ted for'tbe measuremenVof the. laser emission spectrum (a modifica-
tion .of the Sagnac experimnt)-is described. The'results show
that:.',;'
tbeoutput power of_~tbe,laser can be increased by adding;a. buffer
gas,to intensify tbe,decay~of the metastable neon,, by increasing
the temperature of- the Vorking gas, by using pulsed' exe i tat
ion'to .1,
~popu e I --
late -the upper*,working level., I?y increasing th- :
resoziator'length,*~.
and-the~.'Iengtbof tbe.-discbarge tube.,' and-by decreasing the trans-
verse dimensions,,'of:tbe discharge tubee''The authors,thank Yu.
Trokhin. V. N. Lukanin B. I.-Prokmov.B. I. Belov, F. S. Titov
-and A. F. Sue-hkoy fort discussion of the.-results and help, with
th'e
calculations. Orig art..' bas 16: f igure s. and' 13 formulas.
SUB Com. 20/ ORI-G.-REP,.--022/ -0TH REF:I 020/ sUBM:
DUE.
no
A
Card :.2

L 22192-66 M(~)/ W/~ up
(t) IJP(c)
ACC. NRO AT6009315 SOURCE CODE: UR/2504/65/031/000/0139/0177
i~AUTHORS*. Baa&"N akbovskiy, G. M.; Nikitin
Str A. I.j 76
T. Tatarenkov, v M.; uspenski V.
Nikitina..
ORG: Pby tituiaim. P.: N. Lebedev demy of Selene, SR',
sies Ins Aca esj.SS
(Fizicheskly Institut Akademii nauk,SSSR)
'.-TITLE:' Problems of.construction:.and investtgation of the
operation
1,,of,a.hydrogen-atom-beam maser
SOURCE:' AN'SSSR. Fizicheskiy inbtitut. Trudy v. 31,-1965,.
1~vantovaya radiofizika (Quantum radio pbysics).f 139-~177
TOPIC TAGS: masers theory, gaseous state maser, hydrogen, maser,
,.quAntum ge- tor'-excited state, stimulated mission
e
nera
A
':"ABSTRACT; The -author's _preview the hitherto publ~abed work on the
theory and construction of b~drojen-beam mase d discuss the con-
~Tv
structionj eboice.of optimil-parameters, and preliminary operatin
9
results of a maser.~using-tbe.transition I M.F 0) (F' 0
ard

L23392-66
ACC NR: AT6009315- _,7_777~-_
-0) at 1420.405 Mcs. Two installations of different constructiml
are' described. The -operation.of'the maser -in the underexe ited -
mode
~:.is investigated. A procedure for determining' the lifetimes of the
I
--excited atoms in the ztora:&~ bulb are described. Theapparatus was
operated with an axial resonator magnetic field of 100 -- 300 ThOe
The dependence of the amplitude'and1frequency,of generation on-the:
various parameters was Investigated and it was found that the'grea_t-
contribution to- the maser, instability is due to- the instability*.
~'of: the supplementary magnetic field and tbe-detuniing of the
resbnatori,,
overcoming
as a result.of thermal expansion, Methods of these dif-
ficulties are discussed. The section headings are: Introduction.
-I. Construction and.adjustment of hydrogen-beam maser.. 1. Operating'
principle of hydrog6n-beanmaser. 2..Vacuum system. 3. Atomic-be-am'
-sources'. 4; State sorting and'atomic-beam focusing. 5. Detection
--of hy
tus.. 6.'Buib I
drogen-atom beam. Metbods.of adjusting the appara
~f mulation of~atomic hydrogen- 7. Cavity resonator.-. 8. dia
or accu Ra
r 1420 Mes,frequenoy.'' II. Inve
;.tion receiver fo stigation of opera-
(preliminary.results). i'
tion of hydrogen-beam maser Investigation'
-Of stimulated emiaoion of -atomic hydrogen at 1420.4 Mos.
card 2/~

A.

--v 'A.- A..-Ull
N. Po Inom.re

yanov, L
and:-.tO -.8.

"
-
-
P
Ly

r v -for - help-witb th
sogo 0

e work. r g. art

and,,
aB
f gure a. .
Z
7h
69
formulasiL

20/, ORIG REP

CODE: :-

21/ OTH REP: L 034

/ s
UBM DATE:
noj~e

ard

J

C

f Q IEWA-(h) 1JP(-c I LIM
'1- CODE t UR/10U3765jW5-/0W/W5/059U-
9 3VURC8
AUVOR: Basov. N
ORG' none*.
Semiconduct2r, 3ASOrli I
TITIE
.4, 1965, 585-598
soun Uspokhi 4- ziefisakft rauk, v. 85, no.
TOPIC TAGS: semiconductor laser resonance absorption, electron hole,
semiconductor
devico, optic pumping
ABSTRACT. After an introd .uction whIich describes the differences in
the theoretical.
and experimental approaches to physics and their interrelations in
such areas as
the creation of quantum generators (lasers),-tho author presents a
popular-leve
discussion of the operating principles of A semiconductor laser,
including the'three'
following processess- resonance-absorption of lij;ht by the
semiconauctor,resulting
in tho formation of electron4ole pairs; induction radiation of light
as it,talls
on tho semiconductor; and spontanoous radiation upon recombination of
electron-
:hole pairs. Semiconductors are reported tobe suitable for radiation
of coherent.
enerMr from the far infrared to.the ultraviolet are" of the spectrum.
Conditiona
for obtaining minus temperatureel,in which all the levels in the W
conductivity..
zono.are occupied by elootrons but holes exist in-the valent zone so
that the semi-
conductor can radiate but cannot absorb light, are described.for
direct arA indirect
transitions.. Hathods for producing negative temperatures include
optical pumping,.
excitation of the semiconductor by rapidelectrons, and injection of
electrons and
holes across the p-n junction. Atable of the various "a of
semiconductor 14639n.
1/2
Card UDC: 621-375*9

LA20515-66

EWA(h)
k)j
(
IJP(a) WG
ACC NN AP60l.1996. SOURCE CODE: UR/002.0/65/161/004 99 .01
AUTHOR: Basov N G (Corresponding 'member AN SSSR); Belenovp E. M.;
Letokmlhovii S.
OK: !!!Ysics Institut- im Pe N. Lebe'deh AN SSSR (Fiziche5kiy
itistitut-AN SMR)~
MILE.~ Limiting arose-section of a laser:bAtam
AN 3WH. 16 Otoo
Doklady, v. 1 4#L1965P 799--801
TOPIC TAGS:. laser beam, laser theory
ABS TRACT: In principle, 'L beam cross~-sections,Of
continuou3ly~bperating lasers having
large re5onators can be limited ovine to the delayed interaction of
remote parts of
the.lase.- or misratchina of the natural frequencies of the-various
parts of the
re6ona';or. In C.-modulaied pulse laser's.the beam cross-section is
limited becauso
-the Pul*a Gcaara'tion tioa is of the ord Ler of time required for
theLresonator
o.scilla%icns to become establishedi. Beams of bozh types of laser are
considered.
in ihe.first case the problem is tioate'd lb'y splitting the laser
inTo. two coupled
11sublasers" and then analyzing the.interaction-. In the second case,
generation can
.40cctx in one of two modest A) development ol' individual incoherent
"stroams", and:
b)'confluence of adJacent "stream" with coherence beaomin4g established
due to 4if-
traction field exchange. Under. the 4ven conditions the. ms:ximtim
cross-aection of
generation in orse I is about 5 on;. In oaze.2 it is 6 and 4 maq
reepwtiv4I for
the two modes, The authors thank V. N. 116rozov for a series of useful
discussions*
0r,&._ art. has:~ 8 formulas. [JPRSj__
SUB COM 20 -SUBHDATES 24Nov64 ORIG REF: fas, OM
004 OM

TWO.)
ACC NRI APM$754- -CME: WOO/66/003/0()6/0261/02&
SOME
id=OH: Ambutsummn, R, V"
G*. Kryukov, P. G.: latokhoy, V., S.
opa: r1waica
'k Is, P- No keb4dWip`- Of Saiebees JQS R
fL_ (Fizicheskiy
at Ake4emll naux 8WH)
w
TITLE: Lase :Wpi sonant feedback
nbil'=W i te0ret1dhe8bDy.fiziki. Pis tma Y. redak.tsiYU.,
~ftilczhenlrep ve 3P no* 6,9 261-2&
TOPIC TAGS laser r and 4,v ruby 1"erp laser beam,, light scattering,,:
laser optics
ABSTRACT: The authors report whievement, of laser action with
nonresonant feedback,
produced by back-scattering from a volume or.a surface., iihich
behaves. like a"sto.
ebastic" resonator with a continuous ~nxturial-frequency spectrum.
The lasing-fre
quency
,does not depend on the-length of the resonstor,, but is determined
by the resonamt, fro-
,quency of the. active medium. In this laser (7ig. 1) the active
medium cc W ised tvo
Fig. 1. Diagram of Pizparlsent, 1 Seat-
-tererp 2#3 - r
Ir
tiltery, 6 - A
~dtodell# 7 -Oscilloscope-
Cam '~iy%

k_4583-66
ACC Nki AP6W8754
ruby crystals in seriesp each 24 cm long and, 1*8 cm, in diameter.
The feedback. was
-produced with the aid of a mirror (reflection.99%) &rA a
volume.scatterer (suspension
of chalk particles in water) or surftce scattem (plate with a layer
of sputtered
*0). The light was recorded with a photocell and oscilloscope, and
its spectrum was
mas=ed with a Fabry-Perot interferometer. :The gain of a weak signal
in one passWj
through.. the two crystals -reached 900. The condition of self
excitation of the laser
Is described. - The lasing threshold islaund to be practical1y'
independent of. the
:angle, of'Inclination of the scatterer$ over a wide range, but
increases with increas
F . distance between the scatterer and the, crystal. The radiation
line width va4 smaller
Ahan 0.0115 cur,'L and was det
ermined by the resolution of the interfeimmeter(the spon
taneous emission line width of ruby is 15 cmCl). An investigation of,
the beat! iadiaw-i
has shown that there are no frequencie's characteristic of lasers
-~ith-771
resonant feedback* The angle apread of the. beam. was proportional to
the ratio of the
crystal diameter to the, sveMe distance. between the mirror and the
scatterei. The
-distribution of the radiation field in the far zone was quite
homogeneous. A pulse
with duration 200 *nsec was obtained in -the. case of Q~-switching of
the stochartic rea-
onator. The average frequency of the generated radiation in the laser
with non"so-
nant feedback was determined by, the position of the center of the
atomic transtiionp
and not by the resonance of the feedback. It in consequently possible
to produce:an-
optical frequency standard an the basis of a laser with nonresonant
feedbaqJ4~ usir
4g~
higb-gain abomic transitions - in; a gas disebarge'(Nep. Xe, etc.)
owating,.U Abe eon-
tinuous modes and also scAtterers with narrow back-scattering
directivity pattern*.
cord 2/3.

L 22478-66 FBP/FAT(1)jW(M)/EEG(k)-2/T/E0 (t)/39(k)/1WA-(h) IJF(c)-
o"liD
'UR/0181/66/008/001/0021'/0023-
ACC NR- AP6003754 SOURCE CODE:
AUTHOR: B06ov, N. Q.
ORG: PbYsics Institute im. P. N. Lebedev AN SSSR. Moscow (FUichealdy
institut AN SSSR)
TITM _I&ser operating on 9-4uum arsenide with. excitation by means of
fast
electrons ix
SOURCE: FizikEt tverdogo tela, v. 8, no. 1, ~1966, 21-23
70PIC TAGS: laser, solid state laser, semiconductor laser, laser
emission
ABSTRACT: A descri
ption is givenLd a laser excited by a beam of fast electrons.
The carrier concentration was lots -100 cm-3 and'amob1lity6x103cn--v
-sec,
at T 300 K. The pulse duration of the electron beam was 2 psee, the
repetition
frequency was 50 cps, and the electron energies were 50 or 200 kev.
The GaAs
specimens had the form of a rectangular parallelepiped. The emission
spectrum.
of all. investigatid specimens was practically the same. The
dependence of emii-
sion intensity on the current density of the electron beam
varied-from specimen to
specimen within a small range and depended on the quality of the
resonator. The -
Card
12

21412-k6 EVpfe)IE,~r(m)/ja6(f)O(EW,(m)/EWp(+) T IR
"--ACC NR& AP6009664 SOURCE CODE:, UR/018i/66/006/063/6802/0804
.AUTHOR: Basov, Devyatkov, A. G.
_~N., G.,-,,Bogdankevich, 0. V 1;1
ORG: Physics Institute Im. P. N. Lobedev, AN SSSR, Moscow
(Fizicheskiy.-institut
AN SSSR)
TITM., Recombination-radiation of a-SiC excited by electrons
SOURCE: Mika tvardogo tels, IV. no. .3,.1966, 802-804
TOPIC TAGS: silicon carbide, recombination radiation, semiconductor
ABSTRACT: -The recombination:radiation of 1 x 2 x 3 mm samples of
a-SiC with
polished sides excited, by a bean of 2004ev electrons was
investigated '~t a tempera-
ture of 60K.- The electron beam was either perpendicular to the large
face of the
sample. or at a 45* angle to it. The bean's penetration depth was
determined to be-
-120 U.- The emission spectra,of three of the siam Ila are shown in
Fig. 1. A detaileid-:.
spectrum observed in the region between 4700-4850 A is shown in Fig.
2. The energy
difference between the lines.in the 4700-4,850 region, indicating
some-kind of
-Card A I&

L-- 21412

-66

ACC NRs

AP6009664

Fig. 1. -Emission spectra of eg -SiC at

60K and at a current'density j 140 'ma/cm

'

-numbers
inAcate samples: 1 .-.bluish-
The,

-industrial-type crystal; Uzr c 1
greenish 0 or-

-type cryst~al do-j4d vitk
less compensated p

t,1017 impurity.atois per cm3;-4
boul purest..
a
:

sample vith anAmpurity concentration 0
f

7 x I

A
M aw %

,
S
*

L 21412-66

ACC NR# AP6009664

connection between the lines, is
tabulated.in

Table 1. No-stimulated
emission was'

observed In the
experimentse Orig. art. has:
3 figures and 1 table.
[CSI

,SUB CODE: 20/
SUBH DAM 26Jul65/ ORIG REF: 003/ OTH REF: 6031

ATD PRISSf

Li X*z

L 2100 -=(k)-2/ZWA(h)/W(1)/FM/T/zWP(kr Wo
ACCESSION NR: APS024711 UR/0056165/049/003/0805/09-04
AUTHOR,, Basov.-M3 G.%
Qrusvakfx~ A. N
$grozov, Vs
TITLE: No*nlinear mode Interactionlin aim=gj~*
SOURCE:. Zhurnal eksperimentallnoy t teoreticheakoy fiziki, v.
'49,.nd. 3,J965,
895-904
TOPIC-TAGS: -laser,.stimulated'6mission, nonlinear optics,
oscillation-mode
ABSTRACT: A theoretical analysis is-,conducted of the operation of
a-two-mode
solid state-laser. It to shown tha .t-the:mode inter'action can be
described by
a set of rate equations and that the steady-state regime is stable.
The solution,.
of the system of equations: depends on the frequency difference of the
modes. The
two possible cases,, nearly biharmonic and itearly har.
n1c.oncillations, are,analyz do
In the case of, close modest the steady-state regime may be unstablet
resulting 'in
appearance of undamped spiking. The, laser operating. regime to shown
to depend on
the shape and position of the mirrors and the quality of the crystal.-
Orig..art.',,
has: 17 formulas and I figure*. ICS1
ASSOCIATIONi Fizicheakiy Institut Im. P. N. Lebedeva Akademii nauk
SSSR (PhXs1C8__-
Card 1 . ......

L 210

ACCESSION NR*. AP5024711

SUBMTT ENCL. :00
ED.- 03Ap r63

E c"'ss
SUB CODE.*

NO REP SOVs.. 010 OTHER: 012*

ATD PRESS:

L- 2-1840-66 EM(k)-2/EWA(h)/ZWP(k)-/EWT(I,)/FBD/T- - IJPW
AC-CNItl AP600W,3 S?URCE-CODE44- UR/0056/66/050/001/0023/0034-~
AJJTHOR: Basov, N. G~ Ambartsumya!k R. Zayg~,r VEL, Kryulwv, P.
Q,'Letokhov, V S.
ORG: Physics Institute im. P.N Lebedev, Academy of Sciences S8SR
(Fizic skiy institut Akademii nauk SSSR)-
TITLE: Nonlinear amplification of a light pulge
SOURCE: Zhurnal eksperimentallnoy i teoreticheskoy fiziki, v. 50, no.
1, 1966
23-34
TOPIC TAGS: laser, nonlinear,optics, stimulated emission, quantum
amplifile'
ABSTRACT: A theoretical and e erimenial analysis is made of the
passage o
f
XP
a powerful light pulse from, a. laser through a laser amplifier
consisting of two
ruby rods operating in a saturation regime. The preliminary
experimental'results
have already been reported.,(Akademiya nauk. SSSR. Doklady, v. 165,
no. 1, 1965,
p. 58-60 (see ATD Press, v., 4, no.: 138, p~ 7-8)). In the
experiments performed,'
it was shown that as the result of nonlinear. am ication the velocity
of the pulse
plif
Is 6-9 times greater than the velocity of light in vacuum. To
decrease. the pulse
duration during nonlinear amplification, the slope of the incident
pulse should be1
'Card 1/2

t--(- - - W G
L_ 22769-66--- FBV EVT(l)/EEC(k)__0jEWP.(k /E*W (h) JP
__XCC_iTR_t_AP60lO975
SOURCE CODE: UR/0056/66/050/003/0551/0559
Mmlok: Basny rasyuke A.' Z. Zubarevi 1. G.; Katulin, V; A.,- Krokhin,
0
On: Physics Institute im. P. N. jaedev,"Acadew-9 sciencqq
SSSR.JPizicheskiy
k institut Akademii nauk-SSSR)
TITLE: Two-photon optically.excited semiconductor lasel-
SOURCE: Zhurnal.eksperimental'noy i-tearaticheakoy fiziki, v. 50, no#
3,,19666 551-55S
TOPIC TAGS: laser, semicooductor.laser,'nonlinea opticaj two photon
absorption,.
r
F optical excitation
ABSTRACT: The present paper Is M expanded version.of an
earlier.article on a two-photon.
optically excited GaAs laser (Zhurnal eksperimen'tal'noy i
teoreticheskoy fizikil
pis'ma v redaktsiyu, v. 1' no.: 4, 1965, P.'29;,,(see ATD PRESS, v.
4, no. 15, 1965,
p. 9)). It is pointed out that.iu,~calculating the coefficients of
two-photon absorp-
tion in CAC, R. Braunstein and N. Ockman (Physl6al'Review, v. 134,
no.- 2A,-1964,
p. 499) neglected the interband states-in the valence band and the
interference turn
in-the matrix elementai and thus arrived*.&tAncorrect results. Since
a formula derived
by 1;. V. Keldy'sh (Zhurnal ekiperimental'noy i teoreticheskoy
fiziki, v. 47, 1964,
p. 1945) for the probability of multipboton absorption gives a lower
value than the
experimentally obtained data for two-p4oton absorption,- formulas are
derived for the
probability and thu'coefficient~of.~two-photon 'abnnption in 'GaAA'
uiiJ1g__0e4ertuiba~
Card 1/2

-L -22769-66
ACC NR, AP6010975
tion theory and taking. into account the band structure parameters of GaAs. In
additicn
expressiors are also obtained,for the dependence of the excitation,intensity on
the
penetration depth of the exciting radiation into the semiconductor and
theexternal
coherent.quantum yield and its dependence on the internal losses in the laser
and on
the length of the cavity.; The calculatedAata are found to be in good agr~aement
with.
the* experimental results.. .orig. art, has: 18 formulas and 7 figures*-'. (CS)
SUB:CODE.- 20/ SUBH DATE: o6oct65/ ORIG REP: 007/ OTH REP: 064/ ATD PRESS:i,71.27

01

L 2_1432-66 EBD 1.,T(i)/FEc(k)--2LTLP-wp(k)/i~IIA(h) - 1JP(c) !XG
I
ACC NRs AP6009485 SOURCE CODE: UR10020166116TIO0110OT31OVi
AUTHOR: (CorrespmdIng member); Letokhov, V. S.
Basov.'N. G.
ORG: Msics Institute-imi. P. W. Lebed a- Acadermr of hsk
ev
WMI&S _SSM (Fizic e iy
! Inst4tut Akademii nauk.SBSR)
f TITLE: Change"in the shape of alight pulse during nonlinear
amplification,
SOURCE: AN SSSR. Doklady, v. 167,. no. 11 1966, T3-761
GS: laser, stimulated emission-, nonlinear optics
j ABSTRACT: A theoretical Investigation Is made of the change in the
shape ofa
L? pulseffom a laser during nonlinear amplification. The assumption is
madethat
pulse duration is considerably longer than the transverse relaxation
time of the
medium. An expression is'derived'for the pulse velocity-in such a
medium as a
functioh: of the shape oftbe initial pulse. In the case of the
exponential leading-
edge, this expression,.4hich appiies-to"the 'general case when the
velocity pulse
varies with the the leading edge, reduces to. the
-displacement ofthe pulse along
one derived.by Basov et al. (AN SSSR, Daklady" v..165, no. 1, 1965, p.
58).
It is'shown that it is possible to predict uniquely the, change in the
shape:of the
pulse of light during nonlinear amplification or even the shape -of
the ultrasonic
pulse in a two-level phonon maser ampli-fier.".if the shape of the
initial pulse is
known. Orig. art. has*. 8 formulas and 3 figures. [CS)
SUB CODE: 20/ SUBM DATE. 26ivov65/ oRiG REP: oog/ On nEF; oo6j ATD
MESSWIVI~
C.rd

L 35886-66 FBD/EdT(1 )/EEC(k)-2/TA*,V0(k) IJP(0 WG
ACC NRI AP6024516 Soma CODE: uiVo386/66/oo4/oo2/oo6i/oo62
AUTHOR: Basay,, N. G.; OMLW-smh A. *; and Shcbeglov, Ve A.
ORG: Pbysica Institute ime Pe N* lAbedev, Acadeqr of Sciences SSSR
(Fizicbeekly In-
stitut Akademii--na-u-k IMR)
TITLE: Beam laser for the infrared band
SOURCE: Zb ekBper I teor fiz. Pialms, v ktoiyu. Prilozheniye, v. 4.,
no. 2p 1966,
TOPIC TAGS: molecular generator,, ir quantum generator) oytic
transition., laser pump
ABSTRACT: The authors show that atomic- or molecular-beam masers,
the development of
which ban hitherto been confined to the radio band, are also
feasible for the infrared
band and discuss brief3y the possible molecular transitions that can
be used to con-
struct an ir laser with thermal pumping. Such a laser is based on a
very simple idea:
a highly heated beam of molecules in allowed to escape to a vacuum
in which the equi-
librium radiation is much smnller than (Ep - Em)/k (Fp and Em are
two molecular levels
Ep > Em, whose radiative decay times satisfy the relation -rp > TM).
Spontaneaun emis-
sion soon depletes the % level and a state with population inversion
can be produced
for the P- Q transition* The necessary condition for the occurrence
of pupulation
inversion between the levels 0 and a is Tp > (1 + TOCVTP)%. The most
convenient Wye-
length raMe for the proposed method in 3 - 20 ~t. The iuitalble
transitions for the C02
molecule are illustrated. 84mila transitions can be obtained for N20
and BCN- It is
COM 312

I 1~ I T., I klc i-Avu --I-
T~ r 7 ir~k 10 ;1 1T
--L-4.4793~6
ACC NRI AP6031433 SOURCE CODE: UR/0056/66/051/002/0406/0411
AUTHOR: Ambartsumyan. R. Basov, N. G.; Zuyev, V. S.; Kryuko , P. G.S*
Letokhov. V. .; Shatberashvill, 0. B.
ORG: Physics Institmte im. P. N. Lebedev, Academy of Sciences 0SSS~
kFizicheskiy
institut Akademii nauk SSSR)
TITLE: The structure of a giEnt pulse of a Q-switched laser
SOURCE: Zh eksper i teor fiz, v. 51, no. 2, 1966, 406-411
TOPIC TAGS: solid state laser, ruby laser, giant pulse laser, Q
switched laser,
t
lj~ser output
ABSTRACT: The spatial and temporal development of a giant pulse of a
Q-switched rub
laser in a transverse direction and the effects of the cavity on it
were investigated
experimentally by means of the setup shown in Fig. 1. A ruby rod 9
mm in diameter
and 120 mm long with dull lateral surfaces was placed in a reflector
with a helical
IFK-15000 flashlamp. For an 8-ki pump the gain per pass was
approximately 12. A
1.5-j single laser pulse was generated with a duration of 10-15
nanosec. Q-switchlf~_
was done by means of a Kerr cell or a vanadium phthalocyanin
solution. The exponen-
tial results indicate that generation commences in the center of the
crystal an
spreads transversely over the entire crystal in 3-10 nanosec, i.e.,
in a time %-%11u_I
parable to the duration of the integral pulse. The spatial
development of generation

L 1.,7575-6-b EEC( k) -1-,-WPk kN 1'~WP
032 ---4767---
ACC NRs AP6 46: SOURCE CODE: UR/0056/667651/bbY/Of2 2
AUTHOR: AmbartsurMran, R. V.; Basov, N. G.; Kryukov, P. G.;
Letokhov, V. So
--MMMMM~ -51
ORG: Physics lnrtj4tute im. P. N. Lebedev,.AcadeoV of
Sciences,SSSR (Fizicheskiy
institut Akademil.nauk 35SR)
TITLE: Laser witb a nonresonant feedback
SOURCE. Zhu4l eksperimentallnoy i tegreVicheahoY Mikis V, 51,
no- 3s 41966,
724-729
TOPIC TAGS: solid state laser, ruby laser, nonresonant
feedback.,EEESL- laser r and
ABSTRACT: A description is given of a pulsed laser with a
nonresonant feedback
achieved by back scattering of radiation (See also FSB, v. 2,
no. 5, 1966, 1-6).
The arrangement used in the experiments is shown in Fig. 1. The
active medium
4 6 .7
Fig. 1. Experimental arrangement

-k
1P
-ZM WH
J%16%. mu Arvvc.70.7.7
sourtax Cole: MV0386/66/0C4/0D3j0D19/00M
1
9
AUTHM "bos R. s" i zvym, ve Go" zot,
ito:
Sol MIT! M. N
i- F
ows. Mica infftLute Lfieday, Acadftw--gtj~ienaea UAWLLr1Acheskiy in-
stitut Akademii nauk WOR
TITIZ Pr ation Of a: 0 In smll.Oying and absorbing'Ma'M
~d Nntimentallrxw i tooratichookor fixlkis Plelm6 v.rsd&Msiyu.
r 'Ile oo, ve, 4 no.
P
ilor P Ij.; 3,966, 19-22
TOPIC TAGS: coherent lightp light pulse., laser bowl, laser r and
d., pulse shape,
rubj
optic material
ABSTRACT: This is a continuation of earlier work by the authors:
(ZhETF, vi 5D.,~ 230
19%)., where propagation of coherent, light in~ a medium, with
nonliiear gaili was investi.
gated and the possible shortening of light pix1ses in such a medium
predicted* - The
present- letter reports on successful experiments in this
direction., showing that to
obtain compression of a propagating light pulse it is necessax7 to
eliminate'tbe trans.
verse structure that, is produced in the light pulse when tbe~
latter is produced.. for
example., by a Q-gwitch4 laser, In the test setup (*1g. 1) the.
amplifying component
consisted of tbree-xubgucrystals and the absorbing component was two
cuvettes filled.'
with a solution of,vanadium LnWt1n toluene. In the initial
experiments the
M9.ftwe! t
"a compression coffff-RoTbo reall ed le4uze~ of the tranaverve
structure resul ing
Card V9

ACC NR, AP6023635
.19
Fig.. 1. Diagram of experi-,,
ment. I - IAner
2 - Kerr,
sbutter.# 3' - euvattep 4
ruby crystal .1
from the fact that the develppmt of pulse'generation _in the
peripheral parts of the'~
of the Y ftration. J;UCCess was
crystal is.delayed by time'of the. order attained
julao
when this structure was eliminated by means of-a Second Kerr shutter
that cut off the'
leading front of-the generator pulse., gie pulse'vidth was
reduced-from about 32 nsec
at 0.5 J energy) past the'Kerr'8butter and,the first absorbing
euvette to 5.7
10 J):'past the second am
ying crystal., wd 2 nsqc (15'J) past the thlrd. A ligbt--
plif
output of 7 - 8 GW (3 GW16e) was attaine&: Ttle pulse rower is much
higher.than the
tals at JO-SL See ~ duration 1 GWlm?)* Alt4vu&
power vausirg damge in ruby cryff
dawge to the crystal, is hWered bv tba dbort duration of tbe
pulse,#. it dow not pre
ligft L Vases that
vent generation of powerful shortertban 10-9 see. It Isconcluded
extremely short light Vases are'dbtaineble h tVo_co*one#, media In
vbicb tbedb-
Wit
sorbing cooTonent has a saturation energy much low and a homogeneous
lins. vidth much
he anplifying =&UM~.: Orig. art. figures*:.
Xj&rger than + [021
MUM J*j%~:'003/ 001f ATD P?=
vIr.
W2

Al-16 -NKi WbU154413 -BOURCE CODE: - -UR/0161/bb/000/005/1341/134?
AUTHOR".: Basov,. N. 0. Bogdankevich, 0. V.; Yellseyev, P. G.;
Lavrushin, B. M..:*
ORO: Physics Institute im~ Ps N,. Lebedev~ -AN SSSRj Moscow'-
(FizicbiikW),~--1J Y,
institut AN SSSR)-
TITLE: A solid solution GSPXAB
j_k_Laservexeited by a beam of fast electrons,
SOURCE: Fizika, tverdogo-tel4, Y. 8,-.no~ 5, 1966, 1341-1342
TOPIC TAGS: laser, semiconductor laser, coherent radiation, gallium
ph.
gallium jkracuift
7 V1
ABSMRACT:! Laser action at~nitrogen temperature.is reported in n-type
GaP
excited by a beam of 50-kev electrons., The GaP concentration was
about 2u% and that.,-
of uncontrolled donor impurities$ _.j017 Cm-3. The GaP.Aa .I_x
samples were obtained,
by epitaxial growth through gastransport reactions. The dimensions of
the sample
vere-0.48 x 0.75 x 2.5 mm. The Fabry-Perot cavity (cavity length 0.48
MM) was
prepared by polishing the sides of the'sample. The experimental
arrangement was.:
similar to that used-in electron beam excitation of GaAs (Fizika
tyerdogD tol "V-89
no,. it 1966, p. 21) except thata. monochromator with a resolving
power of 31 was.
us;a instead of the spectrometer.. The pulse duration and the
repetition rate were-
2 usee and 60 pps, respectively.. At current densities (J) less than
0.3 amp /CM2
'Spontaneous emission peaked at -a wi-velength of 8300 (half-width of
about 1000
;rr
6~rd
X.

L '%7393-~6
ACC NR,-- AP6015448
Above j 0 .3 amp/Cm a second peak appeared at approximately gOOO The
lntensitt:~,~
of the peak at 7000 A incressed.much faster than that-at 8306 A,,
so.that at
I amp/cm 2Othe intensity of the former peak was 10 times'-greaterthan
that olf the""
peak at 8300 A. Fig. l..shows tfie:emission aRectrum-at diff .erent
values of J. The..
smallest value of half-vIdth obt4ned.vas 12 A. The divergence in the
plane e*xposed,'---
to the-electron beam was 1h-'150.. Depending o~k the qual#y of the
resonator the
Fig. 1. The emission spectrum of,--
08P ASOq
to
CL2
0.4 43 j, amp/cM2: 04%,.2'- 06;75;+.
2i%4
-ii t i it I v I I
SM aw Wo ?QW 70- 270U.-M,
oscillation.threshold varied between 6 2. e
15-2-5 am/cm Th - -.duration of the laser:'
puls&vae not greater than-100 nsect-,. Orig..art4 ban 6 3 figures i,
SUB OODE: 20/ SUBM DVE: 26ju165/ OPJG REF3, 002/ OM MW: 002/ ATD
PiMCBS --
17.51
Card 2/2 -~Jo

L 34 3 8-0-66 _F B_D/_ E-'-h--r -1) EWT (m /E EC ( _k)___
-2/T-/EW P (t ) [E T I /E-W P ( k3 P ( C
AP6023202 WG/JD7JG SOURCE CODE: UR/0020/66/168/oo6/1283/1286
'di .; GOncharOV9
AUTHOR: Basov, N. G. (Corr" _n ng member AN SSSR);,Bogdanke'Vich,
0. V
I-V. A. Livrushin, B~~' M.; Sudzilovskiy. V. Yu.,
institut Akademii nWu-k 90-RI
V
TITLE: A GaAs laser with a plane resonator
0
SOURCE: AN SSSR. Doklady, v. 168, no. 6, 1966, 1283-1286
TOPIC TAGS: semiconductor laser, gallium arsenide laser, plane
resonator, electron
beam pumping
ABSTRACT: Generation in a system with a plane resonator in vhich
the mirror area
S is much greater than L2 (L is the distance between mirrors) is
described. Experi-
ments were carried out on an n-type GaAs sample with an impurity
concentration of
2.1016 ce3and a mobility of 5200 =2/v.sec at 300K. The sample was
prepared in the
form of a polished plane-parallel plate 100 p thick and several
mm in diameter, and
was pumped by rul5O-kev electron pulses with a-duration of
150,10-9 see and a repeti-
tion frequency of 10 cps. 'When L was equal to 100 p, generation
occurred at a curreit
density of 5 amp/cm2. The values of minimum gain necessary to
achieve generation ex-
ceeded the experimentally measured value of the absorption
coefficient at the gener-
ation wavelength by one order of magnitude. The magnitude of the
discrepancy rules
ORG: Physics Institute im. P. W. Lebedev, Academy of Sciences
SSSR (Fizicheskiy

-L--34380-66-----
ACC NR: AP6023202
out experimental error and can be attributed to narrowing of the
forbidden gap of
the excited crystal. The narrowing (by B-10-3 ev) can be due to the
screening
effect of the crystalline field..*by free carriers and their
interactions. Expressions
are given for the dependence of the width of the forbidden gap on
the free carrier -
concentrations. Orig. art. has: 3 figures and 8 formulas. [YK)
-SIM CODE, 20/ SUBM DATE.,. O5Feb66/ ORIG REP: 005/ OTH REP: 005/
ATD PFMS;
CWd 2/2

L 29555-66 EBC(k)-2/EWP(k)/FWT(l)/FBDJT IJP(c) WG
ACC Nka AP6018052 SOURCE CODE: UR/0020/66/168/003/0550/0553
AUTHOR: Basov N. G. (Corresponding member AN SSSR); Morozov, V.
N.: Oravevskiy, A.N
ORG: Physics Ingtitute Im. F, N. Lebedev. Academy of Sciences
SSLRJ1TikcheskiY
institut Akademii nauk SSSR)
TITLE: Contribution to the theory of undamped pulsations
of*~Iaser intensity
SOURCE: AN SSSR. Doklady, v. 168, no. 3, 1966, 550-553
TOPIC TAGS: laser emission, solid state laser, laser pulsation,
phase diagram, light
pulse
ABSTRACT: The differential equation for the intensity of laser
emission, which In the
case of solid-state lasers reduces to an equation whose stable
limiting cycle cor-
responds to undamped oscillations of t 'lie laser emission
intensity, is solved analyti-
cally. It is shown that the solutions obtained approximate
quite closely the phase
trajectories of the system in a case of large depth of
modulation. The solution con-
sists of two parts. 7he first corresponds to a slow motion when
the active particles
accumulate and the amplitude Increases relatively slowly. The
second represents an
increase in amplitude followed by a release of the stored
energy by radiation during
a short pulse. The analytic relations obtained are used to
calculate the parameters
of a scheme proposed by the authors (Paper at Scientific
Congress in Leipzig, March
1965) to obtain short light pulses (Fig. 1). The periodic
solution of the equations
Card -1/2 imni 621.378.325

L 29555-66
ACC NRs AP6018052
Fig. 1. Diagram of equipment for generation
of short light flashes
L Laser; A - amplifier.
Is obtained ahd a numeiical example is presented. It is shown that
radiation pulses
of 5.6 x 10-11 at half-power points with depth of modulation almost
100% are
feasible in.auch a scheme. Orig. art. has: 1 figure and 19,formulas.
(021
SUB COM '20/ SUBM DATE: 23Feb66/, ORIG RED 003/ ATD PRESS
Card 2/2

C' - (-)
L 397S -66- m)fEFQk-)-,2TFBA/-Y)E1dP (k) /&A (h) 1WP (t)
an 1)TW( Tip
ACC NRt AP6015476 SOURCE CODE: us/olft/66/008/065/15WI538
JD/GD-2
AUTHOR: Basov, N. .; Bogdankevich, 0. V.; Devyatkov, A. G.
ORG: Physics Institute im. P. N. Lebedev, Academy of Sciences
SSSR, Moscow
(Fizicheskiy institut AN SSSR)
TITLE: Certain characteristics of emission generated in CdS by
electron excitation
SOURCE: Fizika tverdogo tela, v. 8, no. 5, 1966, 1536-1538
TOPIC TAGS: laser, semiconductor laser, cadmium sulfide, coherent
emission
ABS"1!RACT: The present paper is an extension of an earlier work
(N. G. Basov, et al.
Zhurnal ekspyrimental'noy i teoreticheskoy; fiziki, v. 47, no.
4(10), 1964, 1588) in
which laseA~%ction was_ reported ii~ QdS excited by a. beam
of.electrons. The
0.5 x 0.85 x 1.5 mm sample was prepared by polishing. The
Fabry-Perot cavity was formed
by the 0.85 x 1.5 mm faces. The beam of 50-kev electrons was
incident bntheO.5 x 151M
face of the crystal cooled to the liquid nitrogen temperature. The
pulse duration and
the repetition frequency were 1-2 usee and 50 cps, respectively.
Fig. 1 shows the
emission spectrum of CdS at different current densities (J). Al j
= 100 mamp/cm2
recombinatiun radiation with a half-width ~10 1 peaked at 4960 A.
Although line
na,3~rowing was observed at j = 1.5 amp/cm2' the oscillation
threshold was at .5 amp/cm-2a
The divergence at the threshold was 13* in the plane of the beam
and,9* in the plane

ACC NR3
Fig. 1. The emission spectrum ot US at-
different current densities
43
i in amp/CM2* 1 0.18; 2 0.52; 3 8.56-
(T 80K).
k~W 5M 5M
- V 4IX
perpendiculir'to it. Me quantum efficiency, defined as the ratio of
the radiated
power to the power of the electron beam, exceeded 1%. Orig. art.
has: 4 fi'gureso
Jes
SUB CODE:
Card 212
SUBM DPLLT- Il5Nov65/ ORIG REFI 001/ ATD PM3;~

-WO/JD
-r.- 28449-66 IJP(c) r
_:_-ACC: NRvAP60l8703,---- --SOURCE- CODE:--- uiVOT&1661003101VO4l1043,
AUTHOR: No Gop Zakharw, YU 'P.'* NlIdtinas To .7o; Popov# 7U* Mo_�~
Go Mat. Tat No; MivoshcbLp A! N,
ACOAM of Balances SSSR (FIZICbeekly
OFG: ftnics"Inatitute Im* Pa No waaff,
ad 3 ME SOMO
IrAtItut Ak".
im at. room teolpersture
OS 11-a arsenide UserAperat
IMW I'teoreticheabW Miki, Pism v radakbBiVo
3" noo:' Up 2$"
.um arsenide,. semiconductor laserp junction, junction diodep
A;i spectrum .A
PIZ',
AMMUT: Mle authwe imatigsta the performance a semiconductor lasers
bued on
diffusion p-n junctiomB operating at 300Ko The diodes vere excited
eithir_~vith
pulse generator (current up to, 4000 amp, pulze duration 2D nsec) or
with a generator.
,vltb discharge capacitor and mechanical discharge with current up to
15W ej* an&
nsee. 'e-The diode emissi had atilow crtrents a:brOO& spectrum
T PABS duration 30
mri-oved'dinwgradual3y fX*3.W t~6 Mal vith increasing currento At.'4L
tbrishm.
(ad Current density that Varied from diode to -diode (105. - 5 x 205
a', single
generation line vas produced at 1 -9000, A, vbidh~ is of longer
wavelength than the max-
Pbe spontaneous emission spectruis. -With increase in currentp ada'
-ional t1
lima appear in the spectrump corresponding to different resonator
modes and the
2/2.

-V
r
;1P(t)jE!! - WG/JD
ACC NRs
AP6030959 SOURCE CODE: UR/0181/66/008/009/2610/2615
AUTHOR: -Basov, N. G Yeliseyev, P. G.: Ismailov. I.; Yakobson, S.
V.; Nashel'skiy,
A. Ya.; Finsker, 1. Z__
ORG: Physics Institute im. P. N. Lebedev, AN SSSR, Moscow
(Fizicheskiy institut
AN SSSR)
TITLE: Certain properties of lnP lasers
SOURCE: Fizika tverdogo tela, v. 8, no. 9, 1966, 2610-2615
70PIC TAGS: solid state laser, semiconductor laser, indium
phosphide laser, infrared
laser , lAtO.-0M COMPOUA.J0
ABSTRACT: Stimulated emission of InP diodes in the 9060-9080 i
region was compared
with that of their GaAs counterparts (see Table 1). InP bars were
prepared by the
directed crystallization method in the form of large-size
polycrystals grained in the
direction of the bar axis. The bars were tellurium-doped with
electron concentrations
of 5-1017 Cm-1. The diffusion of zinc from the gas phase into
polished plates each
containing 2-3 seeds took placd at 750C over a 30-min period. The
depth of the p-n
junction was 35 V. The electrical contacts were made of gold which
was sputtered on
plates at 400C. The bar ends were polished and the sides were
roughly worked. The
GaAs diodes were prepared in a similar manner with the following
exceptions: diffusion-
of zinc into GaAs lasted 4 hr at 850C under excess As pressure, and
the resonator
Card

4 44600-66
ACC NRt AP6030959
Table. l.' Basic characteristics of InP and GaAs lasers
InP I GaAs
~ctron concentration in the n-region, cm-3 5.1017 5..1017
ctron mobility in the n-region, cm2/v-sec 2000 3200
centration of zinc in the gaseous phase during diffusion, cm73
3-1018 7-1018
fusion temperature, OC 750 850
fusion time, hours 0.5 4
gth of Fabry-Perot resonator, mm, 0.8 0.9
elength of stinulated emission A 9070 8480
~eshold current density, amp/cmI 72D0 940
-eshold current density after one surface is silvered, amp/CM2
4700 630
a factor a, cm-1 8 8
.n divided by current.density, 0, cm-aml) h.7-10 .2.5-10-2
surfaces and diffusion plane were produced by cleavage along the
contact plane. The
diffusion depth in both cases was almost identical. As regards
the width of directi-
vity,. InP lasers (5-7*) were shown to be superior to GaAs lasers
(14-19') by a
factor of 3 or 4. InP laser diodes were characterized by a low
loss factor (q,7 cm-1)
Card 2/3

-L-44600-66- -
ACC NRt AP6030959
and a gain relativelT lower than that of GaAs, expressed in a
linear approximation
k - 3.4 x 10-3 j cm7 , where j (amp/CDC2) is the current density.
The latter can be
due to a lower (than GaAs) quantum yield and to a thick active
layer (8-10 P).
7be differential efficiencies of the InP laser made it possible to
deliver pulsed
power of 7 watts at 75 amp at the liquid N temperature. Orig. art.
has: 2 tables,
2 figures, and 3 formulas. JYKJ
SUB CODE: 20/ SUBM DATE: 17jan66/ OTH REF: 012/ ATD.PRESS: 5078
3/3 421

L ul-L66 __EWT(l_)/EWT_(m_)/EEC(k)-2/'
(t)JE I I.7P vJr4]D4JG
_ACC7MC_AP603096O SOURCE CODE: UR/0181/66/008/009/261612622
AUTHOR: Basov,_&__Qli Yeliseyey, P. G.; Zakharov, S. D.; Zakharovq
Yu. P.;
Orayevskiy, I. N.; Pinsker, I. Z.; itrakhov, V. P.
ORG, Ph 8i s Institute im. P. N. Lebedev AN SSSR* Moscow
(Fizicheakiy institut
AN SSS
TITLE: Certain properties of GaAellaser diodes
S07JRCE: Fimika tverdogo telal v. 8g noA 1966, 2616-2622
TOPIC TAGS: solid state laser,-semiconductor laser, gallium
arsenide$laserg
-SPMJ'e*A)004!rV1C 01613E
ABSTRACT: Phenomenological methods were used in an experimental
study of certain
properties of GaAs laser diodes (loss factor, quantum yield,
differential
efficiency, gain). The specimens were prepared by the diffusion of
zinc into n-type
GaAs crystals with electron concentrations of 2 x 1018 cm-3. The
cavities consisted
of silver mirrors sputtered on polished crystalline surfaces
pre-coated with a thin
layer of SiO, and the electrical contacts consisted of sputtered
metal (Au, Ni, In,
SO films and fuse4-in electrodes. T~e measurements were carried
out at 77K and the
pulsed output was recorded by a calibrated silicon photodiode. The
lowest threshold
currents occurred in diodes,which were cleaved on all four sides.
A threshold current
of 25 mamp was attained at the liquid He temperature and at a
density of 75 amp/CM2,
C-w operation was observed from diodes with I thr " 0.5 amp at
4.2K. The results

L 44603-66 EWT LEEM) Z-I-,'P Ct)/ET
(1)/EWT(m) - J~A
nv-TA I lip
A C NR, APO'369Fff- SOURCE CODE: UR/0116~-lt66/ 8/009/2B16/2818
AUTHOR; 'Baqg-y.- III,- ii-Drozhbin, Yu. A.: Zakharov. Yu. P.:
Nikitin, V. V.P-
Semenov, A. S.; Stepanov, B. M.; Tolmachev, A. M.; Yakovlev, V. A.
ORG: Physics Institute im. P.-N. Lebedev, AN SSSR, Moscow
(Fizicheakiy institut
AN SSSR)
TITLE: The effect of injection current on the temporal
characteristics of a GaAs
laser
SOURCEz Fizika tverdogo tela, v. 8, no. 9, 1966, 2816-2818
TOPIC TAGS; solid state laser, semiconductor laser, gallium
arsenidellaser, injection
laser> P4 Fe'r-el'c 0- ue4e F 4-.#,r, wrF- C ciie oe IAOr 2~
ABSTRACT: In an investigation of the temporal characteristics of a
GaAs laser the
radiative delay tim:P(T,) was determined as a function of the
injection current.
Ordinary diodes, pr ar d by means of the diffusion process, were
placed in a dewar
at the liquid N temperature. The laser was excited by a current
oscillator with pulse
amplitudes from 4 to 40 amp and a duration of 40 nanosec. Several
diodes were investi
gated at threshold currents from 1.8 to 4 amp. The dependence of T
on injection
current indicates that the value Of T9 approaches 1.8 x 10-9 see.
this corresponds
approximately to the spontaneous radiative lifetimes for electrons
and holes calculatec
theoretically elsewhere (W. P. Dumke, Phys. Rev., 132, 1998, 1963).
With a 16-fold
Card

L 44603-66
-A-P 6-0 3 -0 9-8 3-
C NR:
I
increase of Ithr, Tg increases to 0.9 nanosec; this is explained
by the time increase
necessary to achieve population inversion. To eliminate delay due
to spontaneous
emission and to achieve stimulated emission, the diode was pulsed
by currents from an
auxilliary oscillator with amplitudes of 1.5 Ithr and durations of
approximately
200 nanosec. Some 50 nanosec after the onset of the auxilliary
pulse, the diode was
pulsed by a positive current from the master oscillator. The delay
time between the
onset of the injection current from the master oscillator and the
radiation inducedby
it was measured, and at 17 Ithr was reduced to 6 x 10-11 sec. A
further decrease in
T calls for considerably increased injection currents. The
experimental data indicate
tRat GaAs lasers can be used as radiation modulators in the
centimeter band and as
high-speed (10-10-1011 see) optical switches. Orig. art. has: 1
figure. '[YKI
SUB CODE: 20/ SUBM DATE: 13Apr66/ ORIG REF: 001/ OTH REF: 002/ ATD
PRESS:
5078

L 32209-66 FBD/EWT(1)/ZECW-Z/T/EWP(k) IJP(c,) WG
,/O.WO40/0471-
ACC NR: Ap6o20791 SOURCE CODE: MVO391661N~
AUTHOR:
Basovi N. rayevskin A. N..; Stiakhovskiy, 0. M.; Uspenskiyo A, V.
Lebedev, AcadgZ of Sciences SSSR (Flzlcheakly
im.
ORG: Plwsica Institute
P. N,
instit Akademii nauk SSP)
TITLE: Two-cavity laseAss Idgh-resolution spectroscope
SOURCE: Zhurnal eksperimentalllioy I teoreticheskoy fiziki. Pialma
81yu.
Prilozheniye) v. 3p no. l2p iW,, 468-471
TOPIC TAGS: laser application.. laser radiation spectrum,,
molecular spectroscopyi,
receiver resolution, bWperfine structure
ABSTRACT: The authors show that in a laser it is possible to
resolve spectral
i; components within the limits of a homogeneously broadened line,
so that a spectro-!
scope based on the use of such a laser can have a resolution limit
determined.by-.-I,
the width*connected with the monochromaticity and stability of the
radiation.
source* The spectroscope consists of a previously-described laser
with two cavi-
ties in tandem (Pis'ma ZhM v. 2p 77, 196.5). Modulation of the
distance between
the two cavities normaaly modulates the signal In the second
cavity, but if the
signal frequency coincides exact3,v with the peak of the spectral
line, then the
Card
V2

L 32209-66
AGG NR: AP6020791 0
distance modulation does not cause phase modulation. Since the
position of the
line peak changes with the magnitude of the signal in the first
cavity, it is
possible, by measuring the generation frequency at which the phase
of the second
cavity does not depend on the modulation of the distance between
cavities, to ob-
tain at different signal values as many independent equations as
there are hyper-
fine structure components in the line. Simultaneous solution of
these equations
determines the positions of the hyperfine components. A sample
calculation is
given for a line with two components, and it is shown that for
cavities 10 cm
long spaced 10 cm apart$ a mean beam velocity 6 x 10 cm/sec, a
modulation frequen-I
cy 10 cps,* and a detection time of 1 see it is possible to resolve
spectral com-
ponents separated by several cps. Orig. art. has: 2 formulas.
SUB CODE: 20/ SUM DAM 09AI)r&/ ORIG REF: 002/ OTH REF: 001
Card 2/2

ACC NR: AP701-1022 SOURCE CODEj UR/0053/66/089/003/Cj520/0525
AUTHORS Barchukov, A. I.; Basov, N. G.; Bunkin, F. V.; Veselago, V.
C.;
Irlsova, N. A.; Xarlov, N. 7.77,11anenkov, A. A.
ORG: none
TITLE: Alaksindr M)dialovich rrokhorov
SOURCE: Uspol:hi fizichaskikh naukp v. 89, no. 3, 1966, 520-525
=11C TAGS: physics personnel, radio wave propagation, maser, quantwri
generator, academic personnel
ABSTRACT:
Aleksandr Mikhaylovich Prokhorov is one of the leading Soviet
physicists, a corresponding member of the Academy of Sciences USSR,
and
a winner of the Lenin and Nobel prizes. He is associated with the
development of
quantum radiophysics and belongs to the widely known school of
academicians
L. 1. Mandell shtarn and N. D. Papaleksi. Prokhorov has successfully
combined physical investigations with the development of working
devices
I employing new physical principles and phenomena.
Prokhorov was born on 11 July 1916 in Atherton, Australia. His
fiather
was a polftical refugee who had- migrated to Australia in 1911.
Thefamily
returned to Russia in 1923. In 1939 Prokhorov graduated with honors
frorn
the Physics Department of Leningrad University and entered the
0scilla"ions
Laboratory of the Physics Institute imeni P. N. Lebedev for
posigraduate
work. Prokhorov was in the army from 1941 until 1944. when after
being
-Card 1/6 UDC: 92:53

'-ACC NR: AP7011-022
wounded for the second time he was rildeased. Prokhorov I s
scientific
activity began in 1939 under the guidance of M. A. Leontovich and
V. V.
Migulin with the study of radiowave propagation along the earth' s
surface.
From this study Prokhorov and Migulin developed an original way to
observe
the ionosphere by means of the radio interference method. In 1944
Prokhorov
investigated the frequency stabilization of tube oscillators in the
Oscillattions
Laboratory.of the Lebedev Physics Institute. His first dissertation
work
was accomplished under the guidance of S. M1 Rytov and was devoted
to the
theory of nonlinear oscillations. Prokhorov, Rytov, and M. Ye.
Zhabotin-
skiy received the Mandell shtam Prize for the development of the
theory of
frequency stabilization.
After defending his dissertation, Prokhorov proceeded with his work
in
radiophysics. In 1948 he began a study of coherent radiation in a
synchrotron.
From this investigation Prokhorov developed a method for
determining the
size of electron bunches and showed experimentally that a
synchrotron
generates coherertt radiation in the centimeter range. He presented
his
'results in the form of a doctoral thesis, which he defended
successfully
in 1951.
bard
~2/6

ACC NR. A117011022
Simultanerusly with his work in accelerator physics, Prokhorov,
at -the invitation of ac a~demician D. V. Skobel I tsyn, began
working in the
field of radio spe ctr os copy. Prokhorovl s interest in
radiospectroscopy was
t, encouraged by the fact that well developed methods of
radiolocation and
radioengineering were being employed at that time.' These methods
were
soon to find application in the now field of radiophysics,
principally in the
spectroscopy of the rotational and vibrational spectra of
molecules. Besides
investigating purely spectro~coplc problems, Prokho~ov also studied
the
employment oil t1-e absorption spectra in the uhf range for the
construction
of frequency and time standards. As a result of theoretical
examinations
of ways to raise the stability of molecular frequency and time
standards$
Prokhorov together with N. G. Basov wrote a series of classical
works on
the development of masers, It was at this point that Prokhorov
became
one of the founders of quantum electronics.
Prok:horov and Basov soon offered a new method for obtaining a
system
with negative temperature, the so-called "three levels method, "
which
later became the basic method for developing paramagnetic as well as
optical quantum generators and amplifiers. During the period from
1955 to
1960, Prokhorov concentrated on the development of quantum
paramagnetic
amplifiers in the uhf range, giving special attention to new
crystals' for
Card 3/6

ACC NR: AP7011022
paramagnetic amplifiers and to the investigation of their spectra
and relaxa-
tion characteristics. The ruby was investigated in Prokhorov' s
laboratory
and was proposed for use in quantum paramagnetic amplifiers.
Prokhorovt s works in quantum radiophysics were highly regarded. In
1959 Prolshorov and Basov were co-recipients of the Lenin Prim for
developing a
new method for the amplification and generation of electromagnetic
waves.
Prokhorov in 1954 became supervisor of the Oscillations Laboratory,
which under his supervision developed into two new laboratories of
the
Lebedev Physics Institute: the Radioastronomy Laboratory and the
Quantum
Radiophysics Laboratory. A professor at Moscow State University
since
1957, Prokhorov there organized the Laboratory of Radiospe ctr os
copy at
the Scientific Research Institute of Nuclear Physics. One of the
paramagnetic
amDlifiers for 21-cm waves constructed under Prokhorovl s guidance
was
insialled on the 22-m parabolic mirror antenna operating at the
Lebedev
Institute' s Radioastronoxny~ Station at Pushchino (near Serpukhov)
for use
in observing hydrogen emissions from space.
During this period Prokhor ov directed a great deal of attention to
the
search for new crystals for amplifiers and generators in the range
of
millimeter and submillimeter wavelengths.. His greatest attention
was given to
,,C.ard 4/6

ACC NR. A7703-1022
Insers. In 1958, Prokhorov proposed a new type of resonator for
submilli-
meter waves, the so-called open resonator in the form of two parallel
mirror surfaces.
in 1960 Prokhorov was elected a corresponding member of the Ac_Wemy
of Sciences USSR in the Department of General and A plied Physics.
Since
P
then he has concentrated primarily on the study of processes in
cryi~tal
lasers. Prok-horov has investigated and prepared cryi;tals from
fluorite with .
dysprosiurn and other impurities and has succeeded in using solar
radiation
punip fluorite crystals.
A new principle for the operation of quantum irererators b utilizing
y
the two-quantum transitions was developed in 1963 under Prokhorov' s
super-
vision. The construction of multi-photon (in particular two-photon)
transi-
tion lasers is the future of quantum electronics.
In 1964 Prokhorov along with. Basov and Charles Townes was awarded
the Nobel Prize in physics. Prokhorov has since achieved significant
results
in developing continuously operatine lasers for use in
radiocommunications
and technological operations.
16Card 5/6

'-ACC NR. A71011022
Under ProkhorovI s guiaance investigations have been
proceeding in
solid-state physics, particularly in the area of the
behavior of superhigh
I frequency solid-state plasma. This trend should open up
possibilities for
the construction of new physical devices and a new type of
solid-state
amplifier.
Through the initiative and under the scientific guidance of
Prokhorov,
a special system for obtaining continuous superstrong
magnetic fields with
intensities of the order of hundreds of kilooersteds has
been developed.
This will be the first such installation in the USSR.
A. M. Prokhorov has conducted investigations ranging over
various
fields of physics. Them results of his investigations
ha-.re been published in
more than 160 scientific reports. A member of the
Department of General
and Applied Physics, Prokhorov is also Vice-Presiderit of
the International
Radio Association (URSI) and is Chairman of its Soviet
committee.
Prokhorovt s wor"- have influenced considerably the
development. of
modern physics. His scientific and organizational
activities have greatly
affected the whole comolex of works in quantum radiophysics
carried o
jit in
USSR. OrIj. art. has; I f Igure* EFSB: v. 2 no#
,I SUB CODFr 20 SMI DATE: none
A Card
6/6._

35386 Isspollzovanie Zinml:h PaSt[~4-hch Diya Dalt
ney--heFo Pod'-a7,a Crvtscvodst,,ra.
Sov. Zootekhniya, 1949,, I-loo 7s S. 81-88-Bibliogn. 5 HU7.
SO: Letopis' Zhurnallr,:.,kh Statey Vol. 34, 'I'losIlwa,
1949

BASOVI N. I.
"The Utilization of Chernotem Pasture Lands by Fine-Wool
Sheep."
CaM Agr Sei, All-Urxion Sci Res Inst of Shaep and Goat Raising,
Stavropol', 1953. (RZhBiol.,.No 2, Sep 5h)
. Survey of Scientific and Technical Dissertations Defended at
USSR
Higher Educational Institutions (10)
Sos Sum. No. h81, 5 May 55

BASOV, N. 1.
Chernye Zemli - Soils
Plowing methods for sandy and sandy loam soils of Chernye Ze.-,di.
Kom. baza 4, No. 2,
1953.
9. Monthly List of Russian Accessions, Library of Congress, june
-1953. Unclassified.

BASOVI N. 1.
BASOV, N. I. - "Investigation of the forces in a caating cold in
casting
polystryene under pressure". Moscow, 1953. Min Higher Education USSR.
Moscow InEt of Chemical Machine building. (Dissertation for the
Degree of Candidate
Technical Sciences),
SO; Knishnavii Letcols' No. 46, 12 November 1955- Moscow

67094
/,57 P,3 0 0 SOV/123-59-13-54211
Translation from: Referativnyy zhurnal. Mashinostroyeniye, 1959,
Nr 13, p 520 (USSR)
AUTHORS: Basov; N.I., Levin, A.N.
TTMES. Investigation of--the Effects of Several Technological
Factors on the
Pressure in the Press-Mold of Casting Machines in the
Pressure-Citstifig
of Polystyrene~4
-lbaODICAL; Tr. Moak. in-ta. khim. mashinostr., 1957, Vol 13, pp
97 - 109
ABSTRACT: The distribution of pressiire.in the test press-mold
in dependence on the
temperature of material, specific casting pressure, and mold
design was
investigated. As a test specimen a plate 155 mm long, 20 mm wide
and
2.4- 2.6 mm thick, was used. The pressure was measured in six
plac es,
located over the length of the specimen in a 25-mm distance. The
pressure of the plastic on the walls of the mold was recorded on
a film
of a MPO-2 electromagnetic oscillograph through a 6-channel
tensometer
amplifier. The investigations were carried out on a mechanical
casting
machine of a capacity of 30 - 50 g per cycle, with a variation
in pressure
of from 400 to 1,300 kg/cm2, at a temperature of 170 - 2100C in
intervals
Oard 1/2 of 100C. The distance of the pressure measuring points
from the inlet

SOVPM59-13-54211
Investigation of-the Effects of Several Technological Factors on
the Pressure in the
Press-Mold of Casting Machines in the Pressure-Casting of
Polystyrene
amounted to 2, 27, 52, 77, 102, 127, 152 mm. Oranulated
transparent polystyrene, ob-
tained by the cut-sbeet methodo was used. The relation between
the maximum pressure
in the mold (P ), the specific pressure (P.) and the temperature
of the heating cylinder
obtained &m the curves-by the method of least squares, looks as
foolows:
P
Pm a + 0.00626 to
0
where a is the coefficient dependent on the thicknega of the
manufactured object. The
quantity a depends on the perimeter of the plate, according to
the equation: a -
~ -1.016 + 0.90056 rl , where n is the perimeter. The
investigation of the character
of pressure variation in the mold under different casting
conditions showed that the
relative pressure drop P/Pm over the length of the manufactured
object is the higher,
the lower the temperature of the material to be pressed and the
thinner the specimen.
The relations obtained are expressed in the form of the
empirical formula:
- P - 0.72 . e-0.134K + 0.28e -3,98K
X 170 4 m
where K X Is the variable length of the manufactured object.
Card ~/2 M.L.P.

AFARASINT, A.N., kaind.tekhn.nouk; RA&Z- N-1 -W
kand.tekhn.nauk; BELO-
VITSKIT, A.A., insh.; TXSBLOYSKIY. V.S., doktor tokhn.nauk.
prof.;
OORNLIX. B.L. kand.takhn.nauk; DOROWOKOV, I.M., inxh.; ZAK,
D.L.,
iush.; ITORI11, T.1,9 Ingh, Edooeasedj; KLINOT, I,Ta.9
daktor tekhn.
namk, prof.; LSTIN, A.N.. daktor tekhn.nau , prof.; LWIN,
S.1.8'
kand.takhn.nauk; ' OV, V.A., kana.takhn.nauk: LION11W, N.L.,
doktor takhn.nauk. prof.: LOXHINA. P.L. kand.tekbn.nouk;
MffT=VA.
L*T.. insh.; WIKHA , A.Z., doktor takhn.nauko prof.; NUIMIX,
lhelee
kand.takhn.nank; PN=, S.M., Inih,; SALAZICIN, K.A.,
kand.takhn.nauko,
SILITUMVICH. S.I., kand.tekhn.nauk; SOKMMSUU. S.L. kand.
tekhu.nauk; EMWIX, A.A,s inih.; IMMUNSKITO P.N.~ doktor
takhn.
nauk. prof.; SMn3MM. I.Tu., kand.tokhn.nauk; TASHUNSKATA.
7.L.
kand.tekhn.nauk; POGODIX-ALWESEW, G.1,v doktor takhn.nauk,
profee
red.; ND OVA, V.I., insh., rod.isd-va; SOKOWTA, T.F..
takhn.red,
Ezandbook on materials used in the samifacture of machinery)
Spra-
vochnik po mashinostroitellnym materialam; v chetyrekh
tomakh. Pod
red.G.I.Pogodins-Alskseeva. Moskva, Goo.nauchno-tokhn.isa-vo
us-
shinostroit.lit-ry. Vol.4. ENonmetallic materials] Nemetalli-
chwakle materialy. Red.tome A.N.Levin. 1960. 723 p.
(MIRA 13:7)
(Machinery industry) (Nonmetallic materials)

46

ILI
u,

Handbook on Machine-Building Materials (Cont.) SOV/4419
Dielectric properties
no
Methods of determining the main
physical, mechanical,and dielectric

properties
110
Technical
properties of compression-molding and casting materials
U2
Campression-mol4ing and dasting materials based on
high-molecular

compounds prepared by polycondensation and,
addition polymerization
3-14
Coppression-molding pwders
based on phenol-aldehyde resins
3-15
General-purpose
campression-molding powders
3.16
Compression-molding powders
with high electric-insulating properties
3-19
Special-purpose compression-molding powders
121
Campression-molding materials with improved mechanical
strength,

heat-resistance~and friction properties
124
Ccmpression-molding powders based on phenol-aldehyde
resins and

-fibrous fillers '
125
Water- and acid-resistant
electric-insulating compression-

molding materials:
"renout" and I'dekorrozit" (phenol-formaldehyde

resin with
polyvinyl-chloride and hydrophobic organic and mineral

fillers)
129
Materials of the fsolite type with high
chemical resistancebased

on phenol-formaldehyde resins and
asbestos
132
_C&V64A5

Handbook on Machine-Building Materials (Coat.) SOV/4419

Laminated
p:Uwties
133
Compressed molding materials based on urea- and malamine-

formaldehyde resins and cellulose filler
156
Decorative laminated
plastics
157
Casting materials based on polyamide resins
15.8
Heat-insulating plastics
161
Foam plastics
161
RMIporn [thermosetting
urea-formaldehyde resins vith foaming

agent~containing catalyst for
hardening]
162
Porous materials aade from.-polyester resins and
isocyanatee

"Porolon"
163
Polyethylene materials
163,
"Ftoro.plasts"
(halogenated ethylene plastics]
165
Materials based on polyvinyl
chloride
168
Polystyrene and polyacrylic materials and their
copolymers
17~
Application of polystyrene
M
The effect of various
factors on the properties of polystyrene
173
Polyacrylic -materials
177
The effect of various factors on the properties of methyl

methacrylate
cft"/~
177

Handbook on Machine-Building Materials (Coat.)
SOV/4419
Albuninous [polypeptidel materials and materials made from
cellulose

esters
182
Materials mad from ceUu3.ose esters
182
Polyisobutylene and its compositions
188
Applications
and,methods of working polylsobutylenes
191
Polyurethanes
191
EpcoW resins
198
.Polypropylene
2D0
Film
200
Films obtained frm
polymers and copolymers of viuyl chloride
200
kilms obtained
frcm polyolefins
201
-Organosilicon compounds
206
High molecular
organosilicon compounds
2DT
Polyester resins
207,
Asb3stos'vinyl
219
General infomation
219
Physical and m6cbmwical properties
of asibestos vinyl
220
The production of asbestos vinyl
222
The
tecbidqae of applying asbestos vinyl
222
Safety.precaixtions
and fire-prevention measures
223
1

BASOY, Nikolay Ivanovich; KARDEYEV., Vitally
Vadllyevich;
losifovich; SKURATOV, Vladimir
Kirillovich
[Present-day status of the processing of
thermoplastic
materials; reviev of foreign equipment and
techniques]
Sovremennoe sosthianie pererabotki
temoplastichnykh ma-
terialov; obzor zarubezhnoi tekbniki. Moskva.,
TSentr.
in-t tekhniko-okon. informatsii, 1961. 139 p.
(MIRA 17:11)

BACHURIN, Dmitriy GrIgorlyevich; 'YERDKHIN, A.F..,
vedushchiy red.; -o~vv
1,.~redq LAWNINA, L.V., tekbn. red,
(Study and uses of polymers in industry; a survey of
foreign
tecbniques]Issledovanie i primenenie polimerov v
promyshlen sti.
Moskva,, GOSINTI, 1962. 111 p. (Obzor sarabezhnoi
tekhniki. To-
ma 10) (NIPA 16; 1)
(Polyners)

BASOV N.I,- KAZANKOV, Yu.V.; FELIPCHUK, I.I.
a
Investigation of.tha.basic.technclogical parameters of.polystyrene
injeotion-molding with preoompreesion of a molten material*
Plast. massy no,11:23-29 163o (MIRA 16:12)

N.I.- ULANKOVY Y,-,.V.; FELIKOK, 1.1.
-StadyIng t-bA pressure distrib,.iti.on. in a mold for
1I-ijection molding
of polyalyrene. In 6L hydraulic muchivie. Ti-LLdy M1KIN 27* 16t.
SWdying the Oxesiser. in the moid. of an molding press.
ibid.:305-115 tMRA 18t8

BASOV P.I., V11PROVA, L.K.; V.i(.
Effect of the tvhrjological Wameters on the -iuality of
hoJlow
goods made from po3yathylene. Trudy MIKIN 27:138-151 161.
MIRA 18:8)

~1 W'3 .1% R.A -", 0-0' 11014
Au4'~rneLla !~n!t fcr t.~e mnml'a-~tve or hollow p2ast-o products from
p~;*~Yetle~tm:a wlth thu blovirg extrusion method, Trikdy 141KHN 27:152-
-5. (MIRA 1838)

I--BASOV, NoNe, kend,telchn.nank
Determining of bout parts made of sheet metal and of
working
parts in banding diss.'Sbor. MOSMANZIR no.4.-150-182
'58-
(Shoot-metal work) (MIRA 12:4)

BASOVA N.N - CHERNIKOVA,, T,M.j SUCHKOVp Yu.G.,- RUDNEV,
M.M.
Q favor and ornithasix ih vild birds. Vop.virus.
6,no.5t586-591
8-0 160, (MIFA 14:7)
Is Viruadlogichookly Qt4ol Hanchno-ioale0avatellekogo
protivoehmmp
instituta Tatkaza L Wmvkaslyaj SUM Jim
(Q PM) (OHNITHOSIT

LEVI, M.I.; BATUROVA,, R.S.; WOVA.,-.N.N.; GERASYUK,
L.G.
Reaction of erythrocyte disagg2utination. Acta
viro2. 6:556-557
162,
1. Scientific Research Institute of. Plaoie Conj~ol
and Municipal
Sanitary Epidemiological Station, Rostov on Dc4L
U.S.S.R.
(M%GGLUTINATION INHIBITION TFZTS) (IKFLUENZA VIRUSES)

KANCMKH, A.A.; ZAPIATINA, S.I.; BASOVA. N,N,
Nucdeoproteins of a viralent strain of the plague microbe,
Mr. biokbim. zhur. 34 no.2:176-186 162 (MMA 16211)
1. Rostovokiy-na-Donu nauabno-iosladovatellskiy protivo-
chunnyy institut,

ACCESUM NRt AP4021*72 9/0111VU/007/00twom
AUMORs 1. M.
Allawence fm da"a In the watberh sdainy
iTrUZ. q of wAs by a MAW
surface
SOURCE: IVUZ. 9 v9 79 no. 19 1964, 101-112
TOPIC TAM: MMM surfaceg statisticolly uneven surface, scattedag by
b*=K).-
geneities,, shadow effect, scund wave reflectien reflectim
coefficient, avw%p
field intensity, average field potential. Z;IZZ density
ABSTRAM 7he reMcticn of sound waves fram a statistically ro* surface
is
pralmed. by the projections on the
oonsidemd with allowance for the shadows sur-
face. Fcvwjlas are derived in the Kirchhoff aplx-- for the reflection
and for-the average intensity Of the scattered field. 7he avmp
determined under the assumpticn that the sur-
potential of the softtered field is
iface is descrIbed by a rerAm functian f br which the jadnt densitim
of the functian and its fint.derbutive am known. bay cns-46wnsicnal
btMo.
Was an the surfam an awaiduado but-tia remats am be wtwAsd a1w tD
'M&MI *010sities. MW moats Mply aim to wavese
i.cwd

BkSS FG-.-- FUKS., I.M.
-==a- . .9 ~
Making allowance for shading in the scattering of vaves
on a
statistically rough surface. Izv. vys. ucheb. zav.;
radiofit.
7 rio.1:101-112- 164. (MIRA 17713)
1. Institut radiofisiki i elektroniki AN UkrSSR.

BASOV, N.-T., and VITKEVIICH. V. V.
won the Probable Mechanism of GenerqUon of Nonequilibrium
Radioemission
of the Sun by Beta-electrons,"
ppper submitted for the Symposium on Radio Astronoqr, 30
Jul - 6 Aug 58 Paris

BMV P.S. agronom.
gii~~
Dusting seed oat$ with benzens boxachloride.
Zemledells, 4 no.5:
120 My 156. . Mm 9; 8)
(Benzene hexachloride) (Oats)

xoma, 7v.ya. , Bmv, S.A.
Interaction of an electromagnetic vibrator with a source of
sinusoidal strain. ?is,-tokh. probl. razrab. pol. ilkop. no.4i
66-75 165. KM 19:1)
1. Tomohy politekbnichookiy institut. Submitted March 10, 1965.

"The S,=etory Function of a Horso's Stomach Under Normal and
Pathological
Conditions. " Cand Vet Sci, Alma-Ata Zooveterinary Inst, Yin
Higher Education
TISSR, Alma-Ata, 1954. M, No 8, Feb 55)
SO: Sum. No. 631, 26 Aug 55 - Survey of Scientific and
Technical Dissertations
Defanded at USSR Nigher Educational inst-Ittutions (14)

USSR/Hw= and Animal Physiology. Digestion. The Stomach. T-7
Abs Jour; ~ef zhur-Diol., No 12, 19A 55722.
Author LJXLQY.._~_m-
Inst Alma-Ata Institute of Zoology and Veterinary Scieaces.
Title Normal and Pathologic Secretive Stomach Functions in
Horses.
Orig Pub: Tr. Pama-Atinsk. zoovet. in-ta, 1956, 9, 145-151.
Abstract: In 12 healthy and 32 sick horses the amount of
general
N was determined, of protein N and of globulins, of
the residual N, of the amunts of urea (I) and of
creatinine in the gastric juice (W) before the feed-
ing of the aninals. Also determined were for the
blood serum the amount of protein, the protein coef-
ficient, residual N, I and creatinine before and after
Card 1/3