SCIENTIFIC ABSTRACT BERKOVSKIY, B. S. - BERKUTOV, A.N.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000204930003-0
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: June 8, 2000
• Sequence Number: 3
• Publication Date: December 31, 1967
• Content Type: SCIENCEAB

ACC NRI AM6026923 Monograph URI
Yukhimenko, An'at-oliy Ivanovich; Hirabell,
Petr Petrovich;* Yefremov.-Ion Ivanovich; Panchenkov,_
A-fi-a-toliy Nikola-
yevich; Belinskiy, Vissarion Grigorlyevich;' Kovalic"k, Sergey Vik-
torovich; Put.ilitv, Svetoxar Ivanovich; Roman, Vasiliy
Mikhaylovich;
Hiodushevskaya, Alla Vladinirovna; Tkachenko, Iri.na retrovna;
Ivchenko,
Vladimi'r Moiseyevich
Problems and methods of hydrodynamics of underwater wings and
propel-
lers (Zadachi i metody.girdodinamiki podvodnykh kryl'yev i vintov)
Kiev, Izd-.vo "Naukova dumka". 1966. 158 p. illus., biblio. (At
head
of title: Akademiya nauk Ukrainskoy SSR. Institut gidromekhaniki)
1,2000 copies printed.
TOPIC TAGS: dimension 1 flow, flow measurement, cavitation,.;--I
aMation, fluid mechanic:
PUR OSE AND COVERAGE: This book is intended for scientific and en-
.neering personnel of research and design organizations
specializing
in high-speed hydrodynanics. The book discusses the hydrodynamics
of
bodies moving near an open surface, the discontinuity between
liquids
of different densitites, and the.development of cavitation. There
are
.Car6 1! 2

NRI AM6028923 -
74 references, 43 of which are Soviet.
TABLE OF CONTENTS jabr*idgedli
Forewo rd -- 3
Ch, 1. Two-dimensional flow 6
Ch..11.. Three-dia'aniional flow -- 46
Ch. III. Numerical method of calculating the hydronechanical
charac-
teristics of a foil:.on a digital computer -- 81
Ch. IV.. Fundamentals of the~hydrodynamica of supereavitating
propul-
Sion systems "- 107
References "'57
suil. CODE: .10 071 SUBM DATRt OlMar66/ ORIG REF: 044/ OTH REF:
030
2/Z

L 36471-M ae(m)/Sn(l) W/GD
ACC NR' AT6016715 (tj SOURCE CODE: UR/0000/65/000/000/0021/0032
AUTHOR: Barkovskiy, B. S.: Koshavol, V. I.;
Z/O
ORG: Institute of lRydromeebanics AN UkrSSR Institut
gidromekbaniki
AN UkrdSR)
TITLE: Motion of a thin shape at arbitrary distances from solid
and
liquid boundaries
SOURCE: AN UkrSSR, Gidrodinamika bollabikb skorostey (High speed
hydrodynamics),, no. 1. Kiev,, Izd-vo Naukova dumka,, 1965,,
21-32
TOPIC TAGS: fluid fl2y, boundary layer tbeorys hydrodynamic
theory
ABSTRACT: The plane linear problem of the motion of a thin shape
reduces to a singular integral equation of the form
+1
k'(x-s)j(s)ds=-2UF(x)-.
where
T
k(x)-Re + e, C
4Fh 2 E-4rh
Card 1/2

L 36471-M
ACC NR. AT6oi6715
0
The. article considers the cases where
Fr-co; Fr-O.
Equation (1) than asaumes the form
7(s) -+slpFr
x 8
The remainder of the article in devoted to the imatbomatical
development of the problem in these terms* Orige arite bant. 4,5
formulas
SUB CODE: 209 12/SUBM DATE: 30SOP65/ ORIG REF: 004
2/2

83020
S/181/60/002/008/039/045
A+,11701D B006/BO63
AUTHORS: Berkovskiy, F. M., Ryvkin, S. W., Strokan, N. B.
TITLEt The Current-voltage Characteristics of the Blocking Layer
of
a Germanium ~-n Junction in the Permeable Direction
7A 1A
PERIODICALs Fizika tverdogo tela, 1960, Vol. 2, No. 8, pp. 1956 -
1961
TEXTs The purpose of the present paper was to verify Shockley's
relation
for the current-voltage characteristic of a planar p-n junction:
I - PIs Eexp(q~/kT)-lj , where - I + p(O)/(p(O)+no); denotes the
voltage
applied to this junction, I a saturation current, q elbetron
charge,
p(0) - hole concent'riat-ion in the base on the p-n j.unction,
and n0
equilibrium concentration of electrons iij the base.' The
correction factor
A considers the voltage drop occurring in the semiconductor. The
authors
first discuss the theory'and the method of measurement, and
describe the
apparatus that is-schematically represented in Fig. 2. The
square-T)ulse
generator7lused was designed by Engineer G. V. Khozov. The
current-voltage
Card 1/3

83020
The Current-voltage Characteristics of the
S/181/60/002/008/039/045
Blocking Layer of a Germanium p-n Junction in B006/BO63
.the Permeable Direction
characteristics of the p-n junctions were taken in forward
direction and
at current densities of up to 800 - 1000 a/CM2. For this
purpose, the'
authors used the method of dividing the voltages into those
in the semi-
conductor and the Volume charge region according to their
relaxation
rates. A correction for the Dember emf ip carried out (it
takes into
account the different mobilities of electrons and holes).
The voltage-
current charaoteriatics-measured on diodes and intrinsic p-n
junctions
are shown in diagrams. Furthermore, the authors examined
molten germanium
diodes with a high-resistivity'starting material (n 0-w4.-'
6.1013CM-3
for which P - 2 at a voltage of-100 - 150 mv on the p-n
Junction.
Theoretical studies have shown that the functions ln I .
f(~) should be
straight lines, and that the cotangent of their angle of
slope should be N/
equal to kT/q; thus a voltage of 25.6 mv is obtained for t -
20 C. The V
theory is well confirmed by experimentst 26.5 0-5 mv was
obtained,
Fig. 4 shows the characteristics obta ned for sample of n -
4.10 13CM-3
at different temperatures between -77 and +70 C. The
numerical values
Card 2/3

The Current-voltage Characteristics of the
Blocking Layer of a Germanium p-n Junction in
the Permeable Direction
83020
S/181/60/002/008/039/045
B006/.BO63
pertaining to this diagram are compiled in a table.
Shockley's formula is
well satisfied in this temperature range at current densities
of
2 2
0.1 - 100 a/cm . From " 100 a/cm onward, the voltage on the
p-n
junctions is saturated. Its maximum value is 60 - 70 mv lower
than the
contact potential difference. The authors thank V. 1.
Stafeyev for his,
discussions. Yu. A. Kontsevyy is also mentioned. There are 5
figures,
I table, and.13 referencest 6 Soviet and 5 US.
ASSOCIATION: Fiziko-t6khnicheskiy,institut AN SSSR Leningrad
'Institute of
Physics and Technology of the AS USSR. Leningrad,,).'
SUBMITTEDa February 1, 1960
Card 3/3

89294
9, (14 &o // 3 21 3 f g) S/181/61/003/001/033/042
V, V1 77 B102/B204
AUTHORSt Berkovskiy, P. M., Ryvkin, S. M., and Strokan, N. B.
TITLEs The effect of adhosion levels upon the relaxation of a
ctxrrent pusaing through an n-p function
PERIODICALs Fizaka vverdogo tela, v,. 5, no. 1, !961, 230-255
TEXTa The i~nergy levels in the 'forbidden band of' a
semiconductor, which
trap free oarriers, are divided into two typesy recombination
levels and
adhesion levels; in the latter, the carriers are held back for
some time,
after which they may earape into the band,. A atudy of'
relaxation curves
furnishes dat'a oil the adnf-aion-eenter parameters, suoh as
trapping cross ~Y
section, concentration, pos,ition in the forbiddon band, and
duration of
the entablichment, of thermal equilibrium in the band. Tn tile
present
paper, tne effect produced by a(illesion lovels upon Lhe
kinetics of a
current pasaing throagh the p-n jimetion is studied,.
Investigations were
carried out for the short-cirouit current of a pfloto-diode4
the results
obtained, however. hold also for other devicea conta.,ning a
p-n junction.
L photo-42.ode with n-ty-pe bacie ras studied; the
electron-bole pairs formed
Card, 1/6

SAY,,% 1/003/001/03 3/04 2
The effect of adhesion... B102/B204
during irrada.ation diffused to the junction, where they wore
separated by
the contact field and thus generated a current in the outer
circuit. In
germanium, adheaion usually occurs at t 0C, and therefore the
"tails"
characteristic of adhesion ehould be expected at low
temperatures also
for the relaxation curves of the photo-diode current,, Howtver,
no
diminished relax&tlon rate could be obs-~rvad either on Ge or
91 photo-
diodes down to nitrogen temperatures. PhDtoconduction and
short-circuit
current of the photo-diode were measured simultaneously on the
same
specimenj the experimental arrangement ia chown in Fig. 1. The
n-type
ge7manium specimens (3-5-15 mm) had two ohmic and one indium
contact
(p-n Junction). The signals coming from the resistor were
observed on an
oscilloscope. Fig. 2 shows a typical osaillogram recorded at
nitrogen
temperature (duration of pulses,~-_i5O j6seo),, The
photoconduction relaxation
curve contains a "quick" and a marked "slow" part. The latter
is related
to the adhesion of carriers (Fig. 2a)~ The short-circuit
current had a
constant relaxation time approximately equaling the life-time
(2b); none of
the seven specimens of different sensitivity showed a
relaxation that was
characteristic of adhesion (i.e., long tails)., A theoretical
study of
relaxation due to adhesion was carried out proceeding from the
Card 2/6

89294
3/181/61/003/001/033/04?
The effect of adhesion..'. P_102/B204
Af
fundament*al relatio'ne
kT
V Pe
A
dlp
-=PkIl- 7,. (APM-
dt
dApAr
77~-F = TJ, (APM7'A~AX)i
an = AP
'with the denotations to-be seen from Pig. 3, on the assumption that
the
f illing of the adhesion centers with minority carriers (holes) is in-
If only minority carriers participate in the current
of the photo-diode, it suffices to determine Ap(t). The following is
found.
I Ap-f)kI-r[l-,rm-rexp(-(t--r)-~- 3~v
for.the hole concentration in the band p
p M
and for the amplitude of the slow component one obtains:
Ap(t-OD )-AP(t "r)
&p r~Mr ~C 1 . For the case of bipolar photoconduction,
L\P(t-OD
-a nd for
and in the presence of A-typeladhesion levels, formulas are also fo
Card 3/6

89294
S/181/61/003/001/03-3/04?
The effect of adhesion... B102/B204
An -~Ap.+Ap and a At sufficiently low temperatures,
n
U P and 8 and the slow component of the relaxation curve of
vu n
majority carriers makes the main contribution toward steady
ooncentration.
Investigations showed that A-type adhesion levels practically do not
influence the relaxation of the current passing through the p-n
junction.
The circumstance is important when selecting the material for'devices
I supposed to conserve inertia-at low temperatures-. The
adhesion-level
type may be determined in a simple manner by means of a p-n
junction: If
the short-circuit current relaxation has no slow component, the
adhesion
level is of the P-type, and, conversely, of the a-type. A. A.
Mamontova
1 is mentioned. There are 4 figures and 8 references: 2 Soviet-bloc
and
non-Soviet-bloo.
ASSOCIATIONt Leningradskiy fiziko-tekhnicheskiy institut AN SSSR
imeni
akad. A. F. Ioffe (Leningrad institute of Physics and
Technology AS -USSR imeni Academician A. F. Ioffe)
SUBMITTEDs July 11 1960
Card 4/6

8/181/61/003/001/033/042
The effeot of adhesion... B102/B204*

S/1610 16010/,003/011/047/056
(11Y3, HS-O) 310 4713 8
AUTHORSs Berkovskiy, P. Moo Ryvkinq So Moo and Strokan, N. B.
TITLEs Effect of adhesion levels on current relaxation in
instruments with n-p junctions
PERIODICALt Fizika tverdogo tela, v. 3j no. 11t 19611
3535-3537
TEXTs Using the results of another work (ITT, 3, 1, 230,
1961) the
authors study the effeot of &~- and ~ adhesions on the
relaxation of a
current flowing in a junction with a thin base. This case
corresponds
to real conditions# and is treated by the example of a
photo-diode. Only
in the case ofo(-adhesions and to)> 8 is If, the relaxation
of the photo-
currentp retarded by 0 + M/Pv.). to - w2/2Dt where w is the
thickness
of the base and D the diffusion coefficient; 9 - 1/1-0 vm +
M). Por any
marked retardation the concentration of adhesion levels M
must satisfy
the conditions X~ t t
/P 0 >/ it(m + P i. so 9 > 1/3,*M. On the basis
vm; vM 0 Ff -
of published data an estimate for germanium and silicon gives

0 00
S/I 1 61/003/011/047/056
4 JB!
Effect of adhesion levels on current B104 B138
8
M>1015 cm-13. This shows that,although important to the
kinetics of
photo-oonductivity, in most oases adhesion levels do not
affect the
inertia of germanium or silicon instruments with n-p
junctions.
Adhesion through the depth of the base will affect the
kinetics if the
resistance affects the current flowing through it. In these
cases
inertia 11W.1911 could be detected in silicon at 3000X, and
in germanium
at 770K. Adhesion levels can also affect other properties of
instruments
with n-p junctiozBin which there is resistance across the
base. There
are 2 Soviet references.
ASSOCIATIONt Fiziko-tekhnicheskiy institut im. A. F. Ioffe AN
SSSR
Leningrad (Physicotechnical Institute imeni A. F. Ioffe
AS USSR, Leningrad)
SUBMITTEDs July 12, 1961

AUTHORS: Berkovskiy, F. ](,, and Ryvkin,
34226
3/181/62/004/002/009/051
B102/B138
S. M.
TITLE: Sensitivity of germanium and silicon photoelements in
the
range of impurity excitation
PERIODICAL: Fizika tverdogo tela, v. 4, no. 2, !962, 366-375
TEXT: The authors study the possibility of the occurrence of
a photo-emf
in the p-n junction in the long-wave range behind the
intrinsic
absorption band. The theoretical results were checked by an
experimental
investigation of gold-doped Ge and Si elements. It is shown
that
photo-emf may arise with impurity excitation in conditions
where minority
carriers are generated in sufficient quantity. Fig, 1 shows
the
transitions possible when the semiconductor contains only one
kind of
impurity and is irradiated with photons whose energy is less
than the
forbidden-band width. It is demonstrated theoretically that
with impurity
excitation in general, minority as well as majority carriers
are produced
if the quantum energy is greater than the half-width of the
forbidden band,
If it is less, however, only majority carriers are produced.
Photo-emf
Card

3~ 12 26
S 81/62/004/002/009/051
Sensitivity of germanium and silicon... B102/B138
was observed on Ge p-n Junctions obtained by diffusion of
antimony into
P-type Ge with a gold concentration of 1015 em-3. From the
X-dependence of
photoconductivity and photocurrent it can be seen that both
cover the
region of impurity excitation, Photoconductivity extends
farther than
photo-emf into the long-wave range. Photoconductivity and
photo-emf at t4
A> 2 It are due to the deep acceptor levels of gold, 0.2 ev
from the
conduction band and 0.15 ev from the valence band. The
voltages obtained
experimentally are less than the calculated value, but may
reach
considerable values. For aload resistance of 10 8 ohms at X =
2.3 ~ the
emf reaches 150 Mv- For an incident energy of 3-10-5 w, this
corresponds
to a sensltiv~.ty of 5000 V/w. The p-n junction in gold-doped
n-type
silicon was obtained by electrodeposition of nickel,
Photocurrent and
photoconductivity have very similar spectral distribution and
occur
between 1.5 and 2.5 IL. They are ascribed to the level, 0.54
ev off the
c-band which is near to the middle of the forbidden band. As
compared with
photoresistors, photoelectric signal transformers on the
basis of
p-n jVnctions have several advantages: low dark current,
insensitivity to
adhesion levels, independence of external voltage sources.
The design of
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34226
S/16IJ62/004/002/009/051
Sensitivity of germanium and silicon... 3102/B138
a photoresistor (Fig. 7a) and of a photocell with p-n junction
are compared
in an, appendix to the paper. W. B. Strokan and L. G. Paritskiy
are thanked
for discussion and D. V. Tarkhin and Yu. V. ShmartBev for the
specimens,
V. Ye. Lashkarev, K. M. Kosonogova (Izv. AN SSSR, ser. fiz. No,.
5-6v
1941), G, M, Avakyants and Yu. L. Ivanov are mentioned. There
are
7 figures and 7 references: 5 Soviet and 2 non-Soviet. The
reference to
the English-language publication.reads as follows: J. M, Waddel
et al.
Proc~ IRE, LO2, part H, 757, 1955.
ASSOCIATION: Fiziko-tekhnicheakiy institut im. A. F. Ioffe AN
SSSR
Leningrad (Physicotechnical Institute imeni A. F~ loffe
AS USSR, Leningrad)
SUBMITTED: July 29, 1961
Fig. 1, Band scheme with possible transitions.
Fig. 7. Photoresistance and photo cell.
Card 34 '~'

V12 2 (103
34 227
S/18 62/004/002/010/051
B102YI3138
AUTHORS: Berkovskiy, F. M., and Ryvkin, S. M.
TITLE: Nonstoady photo-emf at an n-p junction due to majority
carriers
PERIODICAL: Fizika tverdogo tela, v- 4, no. 2, 1962, 376-378
TEXT: Steady photo-emf in semiconductors is only observed if a
po'tential
bairier exists and if minority carriers are Cenerated. However,
since the
periods required to establish the photo-emf of an inhomogeneous
semi-
conductor may be different, a nonsteady photo-emf may also be
observed when
only majority, carriers are'generated. The time required for
establishment
in this kind 'of semiconductor will depend on the lifetime -r
and the time
for establishment of diffusion-migration equilibrium t/06,
which are
different. A nonoteady-phot6-emf due to majority-carrier
generation was
observed at n-p junctions produced by diffusion of antimony
into gold-doped
15 -3
P-type Go, with an Au obnoentration of -10 0m . The a~ectral
photo-emf
distribution is shown in Fig. 2 for steady illumination (a and
pulded
Card 0

342 27
S/181/62/004/002/010/051
Nonsteady photo-emf at an... B102/BI38
illumination of 10 cps (b). Steady photo-emf stops at ?.8 p. At
X> 2.8 ~t., only majority carriers are generated. There are 2
figures and
6 Soviet references.
ASSOCIAMON: Fiziko-tekhnicheakiy institut im. A. F. loffe AN
SSSR
Leningrad (Physicotechnical Institute imeni A. F. Ioffe
AS USSR, Leningrad
SUBMITTED: July 29, 1961
Fig.' 2
Card 2/2

37808
S/120/62/000/002/039/047
14, 4o/E163.
AUTHORS: Berkovskiy, F.M., Strokan, N.B., and Khozov, G.V.
TITLE: 7tudy of-the possibility of measurin semiconductor
relaxation times of the order of 10-9 see by the
phase method
PERIODICAL: Pribory i tekhnika eksperimenta,lno.2, 1962, 165-~168
TEXT: A Kerr-cell modulator with sinusoidal I Mcs control
signal was used to determine the lag of a fast photot4ode on
the basis of phase shift measurements. Two methods 4c~f obtaining
the referencewere examined; a photomultlpller detects the same
light signal; the voltage applied to the Kerr cell is itself
taken as the reference. It is considered that the delay in the
photomultiplier itself is not negligible at the valuew-used in
the present measurements, whereas the phase shifts In the
modulator are negligible.. A constant difference was observed
between.the results obtained with the photomultiplier and Ihose
based on the Kerr-cell control voltage.of the order of 10-0 sec*
..Pard 1/2

S/120/62/000/002/039/047
Study of the.possibility of ... E140/E163
The precision of the latter methodlis slightly higher and
superior for measurements of time intervals shorter than
10"o sec.
There are 3 figures.
ASSOCIATION: Fiziko-tekhnicheakiy institut AN SSSR
(Physicotechnical Institute, AS USSR)
SUBMITTED: July 59,1961
Card 2

BMOVSM- 1, F. M. AYMN, S.M.
Effect'of the optical racbarging of impurity centere on
the kinetics of a phot"Mrs" in germanium,, Fiz,, tver,, tela
5 no.2-.381-385 F 163. - (MIM 16; 5)
1. Fisiko-tokhuicheakiy inatitat imeni A.F.Ioffe AN SSSR,
Leningrad.
(Photoolectricity) (Germanium)

BERKOVSKI
12 P.M.; KASYMOVA, R.S.; RYVKIN, S.M.
x
Sensitization of photodiodes resulting from optical recharging
of impurities. Fis. tver. tela 'no,2024-533 F 163.
f. (MIRA 1615)
19 Fiziko-tekhnicheski institut imeni A.F.Ioffe AN SSSR.,
Leningrad.
(Diodes~ (Photoconductivity)

L 18718-63 EWP(q)/Wf(m~/Bb~' D JD
ACCESSION NR: AP3003910 S/0181/63/005/007/2023/2025
AUTHORSi Berkovskiy. F. M.; "kin, S. M..
TITIE. Impuri toelectromotive force induced by a current
ty pho
SOURCE: Fizika tverdogo tela, v. 5, no. 7, 1963, 2023-2025
TOPIC TAGS: photoelectromotive force, impurity, induction, absorption
band,
radiation defect, recharge, electron, hole,;-injection
ABSTRACT: A new effect has been discovered at illuminated silicon
photodiodes:
after passage of a current pulse through the n-p Jtmction in the
permissive direc-!
tion, the photodiodes prove to be sensitive in a new spectral region
for the
fundamental absorption band. This relationship is shown,in Fig. 1
(see enclosures
The photoelectromotive force has the character of a flash, the
amplitude and
'duration of which are determined by the intensity of current or
light.
Electri-
Cal recharging (of electron-hole pairs) is better than optical
because the in.
jection takes place at a distance from the n-p junction representing
the layer
Jn which the photoelectromotive force is generated and because
nonequilibrium
Card 1/: 92V

T L 18718-;~63
-ACCESSION NR: "3003910
concentrations can be injected at higher values, the time for
c~prginga sample
thus being very small. In their work the authors uzed
silicoiPphotodiodes with
radiation defects formed by gama radiation from C060. M-charge of the
levels
of radiation defects consequently took place. It is clear that a
similar affect'
must be observed in other materials with impurities corresponding to
deep levels:_!
iftellminary experiments have shown that the effect is observed also
in Ge photO7
.;diodes that have been exposed to fast electrons. It is felt that
the Fesen
:need is for more detailed investigation on various materials. "The
authors thank:
'Ye. V. Ostroumova and R. S. Kasy*mo for their help in carrying out
the experi-
"ments. orig. art. has; 2 figures.
ASSOCIATION: Fiziko-tekhniebeskiy institut im. A. P. Ioffe AN SSSR,
Leningrad
(Pbysical and Technical Institute, Academy of Sciences, SSSR)
SUMITTED: O9Mar63 DATE ACQ: 15Aug63 ENCL: 01
SUB CODE: PH NO REF SOV: 005 OTHER: 001
1. 6rd 2

BERKMSKIYj, F.M.; KASYMOVA,, R.S.
Negative resistanee of irradiated Ge and Si diodes.
Radiotekh.
i elektron. 9 no.5:SW-901 My 164. (MIRA 17:7)
1, Fiziko-tokhnicheskiy institut imeni A.F. Ioffe
AN SSSR.

EWT (C A PF -;;2/EW P (q) IEWP b)
SD-, -5/AML/L-~D(f ~/P A WO fft ICr-
~7 v;
resistance
i zA~ neuLrons -an(--. e I PC! T. w

L 2132-65
1 "'F A ~ v- ,

C
~rt
i

A c, c rr Ti 7) *,r, o, 111, 6
~E4

L 4(,192-556 Err (Q-Z/_D~Tl ( I )/FWT(m)/T/EWP(-t)/"T1 T,T(c t)
I ACC Wt AP6027247
AUTHOR: Berkovskya, K. F.; Berkovaltiv, F. M.
ORG: none
TITLE: Investigation of a scannistor on a base of compensated
germanium
SOURCE:. Radiotekhnika I elektronika, v. 11, no. 8, 1966, 1530-1532
TOPIC TAGS: scannistor, ph transition, circuit design, germanium
semiconductor, sensi-
tivity increase, emission threshold , ilnI966 t70AJWfR?-P-e,
ABSTRACT: Recent publications contain informntion on the
development of a new semicon-
ductive devfte with two n-p transitionry a scannistor, which is a
one-line television ima
ge
-converter'.',' Data have also been published on scannistors made
on the base of n-p transitions
in silicon. In order to improve the threshold characteristics of
the device and to lengthen its
spectral sensitivity region, the present authors investigated a
scannfstor made on a germaniurn';
base. The increase In the specific resistivity of germanium by the
introduction of compen-
sating impurities and by lowering the temperature made It possible
to develop a germanium
scannistor -which, compared to the silicon solid scannistor, has a
higher resolving capacity
and sensitivity. The device, shown In Fig. 1, consists of a linear
n-p-n structure with
Card 1/3 UDC: 621, 397. 613 + 621-382.333-33

L 46192-66
1- Add--WR--,)
Svc
Fig. 1. Scannistor switching circuit (SVG: sawtooth voltage
generator;
DA: differentiating amplifier)
photosensitive n-p transitions. One of the n-layers performs the
function of a voltage divider
of the battery E0. Upon application of the sawtooth voltage, the
triode structure of the scan-
nistor achieves commutation of the contour of the injected
carriers, generated by the Image
contour. Figure 2(a) shows an osofflogram of a signal from a Ge
scannistor 1 cm long, on
2/3

t 4619"-66
ACC W AP6027247
which a light strip 0. 1 mm wide Is projected. The motion of the
light strip along the scan
nistor corresponds to the shift of the pulse along the
oscillogram; and Fig. 2(b) shows the oB-
cillogram. of a threshold signal subjected to illumination by a
flux of 10-3 1u. Orig. art. has:
5 formulas, and 2 figure's.- [26]
SU-4)CODE:
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The properties of tionel Metal
COntainiDg Additions Of BerYliums,

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Silicon, and Cobalt. T.J.
ad F. W. Stapanav (Metallurg (
a
0
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HOtAllUrgl9t), 1939, (2), PN9
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of 160-190 kg./w.

09 #1;

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It
00 a I-Iwrti- was studitd. The suitability of vpAmv also." for
the pWjjvUw
4)f mmPo'n"I'm wit" MW Ow M16"m bPt"-"l the awfUnIcal. okil"I.
as&
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1. 13ERKOVSKIY, 111. Ye
2. USSR (600)
4. Brucellosis
7. Morphology of the oral mucosa and of the dental pulp in
experimental
brucellosis in gunea pigs., Stomatologiia, No.4, 1952
9. Monthly List of Russian Accessions, Library of Congress,
February- .1953. Unclassified.

AUTHORS: Loba2ev, M.I., and Berkovskiy, V.S. 130-58-4-11/20
TITLE: Rolling Spring Strip with Parabolic Edges (Prokatka
ressornoy polosy s parabolicheskimi kromkami)
PMIODICAL: Metallurg, 1958, Nr 41 pp 20 - 22 (USSR).
ABSTRACT: Spring strip with parabolic edges is used in the "Volga",
'Pobeda" and GAZ-69 cars: in spite of its production having
started in 1%.?, many technological problems remain unsolved.
A major difficulty is the tendency of the strip to be non-
symmetrical and the authors discuss the two variants of
lateral reduction distribution in existing roll-pass designs
(Figure 3). At the Stalin.o- Works, a considerable amount of
rejects is due to this cause and when a similar system was
adopted at the "Dneprospetsstall" Works the reject proportion
exceeded 25%. From an analysis of,the causes of these defects,
a satisfactory system was developed (Figure 5) in which the
large lateral horizontal components of the roll pressure on
the metal centre the strip in the pass and maintain symmetry.
The authors give an equation for calculating. the finishing-
pass design and describe a simplified system for specifications
omitting the edge curvature: in September - November, 1957,
568 tons of spring were rolled on the 325 mill at the
Cardl/2"Dneprospetastall" Works with a total reject rate of 2.6%.

Rolling Spring Strip with Parabolic EdgeB 130-58-4-11/20
An automatic guide assembly (Figure 8) designed at the
Stalinskiy metallurgicheskiy zavod (Stalino- Metallurgical
Works) is said to have facilitated parabolic-edge spring-
strip rolling: the guides are in the open position except
when the top roll of the stand is lifted by the presence of
the strip. Finally, the authors criticise the standard
specification, GOST 7419-55 (Figure 1). There are 8 figures.
ASSOCIATION: Zavod "Dneprospetsstall" ("Dneprospetsstal"'
Wom-ks)
Card 2/2

18-5X00, 28,1000 77431
SOVIN-6o-i-i4/22
AUTHORS: Lobarev, M. 1. (Chief.of Rclling-Shop), Berkovskiy,
V. nior Roll-Pa3s Designer)
TITLE:
Measures or Improving
Technical and Economical

Performance Figures of
Section M111s
PERIODICAL:
Metallurg,
1960, Nr 1,
PP 30-32 (USSR)
ABSTRACT:
Reducing mill 825 and
section mills 550, 325, and

280 were modernized at
"Dneprospetsstall" Plant

(zavod "Dneprospetasta
1l"). The
plant produces

high-speed steel R-18
(similar In composition
to U.

S. high-speed steel 18
-4-1), Knl2-steel (composition

(%): C, 2.00 to 2.30,
Mn
, 0.35; Si, 0.40; Cr,11.0

to 12.5; Ni,0-15 to 0.
.
30; Mo, 0.50 to 0.80; 3 and P,

traces), 3Kh2V8-steel
(Composition (%): C, 0.30-

0.50; Mn, 0.2-0.4; Si.#
,