SCIENTIFIC ABSTRACT DVORYANKIN, V.F. - DVORYANSKAYA, N.V.

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SCIENTIFIC ABSTRACT
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? 9 --.rie -alle a maximum at 0, 2 n --f; T SOV/70-3-4-20/26 AtJTHORS: D y o zy V-F. and Vaynshteyn, B.K. ADU 4..L~ TITLE: A Low-temperature 6iystal Holder for the Electronograph'EG (Nizkotemperaturnyy kristalloderzhatell dlya elektronografa EG) PERIODICAL: Kristallografiya, 1958, Vol 3, Nr 4, PP 504-506 (USSR) ABSTRACT: A crystal holder attachment for the.standard EUG horizontal- beam electronograph of the Institute of Crystallography is described which can enable a specimen grid to be cooled to liquid temperature (with drawing). The grid holder is at the eld of a tubei'which can be filled with liquid 142, protruding into the specimen space. The channel through which the beam passes along the axis of the instru- ment can be rotated about the cooling tube to cut off the beam which may heat the specimen very noticeably. The cooling tube entering the camera is surrounded by a double- walled screen also entering the camera which'can also be filled with liquid N2 to act as a guard tube. The copper crystal holder is itself surrounded, except for-entrance and outlet -apertures, with a copper box connected to the cooled guard tube. Operation without a guard tul)e proved Card 1/2 SOV/70-3-4-20/26 1, Low-temperature Crystal Holder for the Blectronograph EG unsatisfactory. A Cu-constantan thermocouple is provided to measure the specimen temperature. The mechanism by which the specimen carrier can be moved is, except for rotation about the tube, mentioned but not described. It is recommended that a cold trap immediately above them' pump should also be fitted as otherwise any condensible vapours will contaminate the specimen slightly in spite of the guard chamber. Specimen pictures from NH,,Pr phases (II) and (111) are reproduced. There are 7 references, 3 of which are Soviet, 1 in English and 3 Scandinavian. ASSOCIATION: Institut kristallografii Aii SSSR (Institute of Crystallography of the AC.L9C-USSR) SUBMITTED: May 12, 1958 Card 2/2 AUTHOR: D=o~~ -vap. sov/70-4-3-32/32 1 1~10 ~ TITLE: Low-temperature Methods in Electronography PERIODICAL: Kristallografiya, 1959t Vol 4, Nr 3, pp 441-459 (USSR) ABSTRACT: Comprehensive review of foreign and Soviet work. Various experimental arrangements for examining specimens at low temperatures (liquid air) are described and illustrated. The examination of thin metal films evaporated onto a cold substrate is described. Super- conductors examined at liquid helium temperature are discussed and work on the structure of hexagonal and cubic ice is reviewed at length. It is concluded that the use of low temperatures in clectronography signifi- cantly widens the region susceptible to electron diffraction techniques and is suitable for the solution of the following problems: 1) Study of first- and second-order phase transitions in th--*n films at low temperatures. 2) Determination of the structure-s of thin metallic and non-metallic layers obtained by condensation on a cooled- CarCU/3 substrate. SOV/70-4-3-32/32 Low-'temporature Methods in Electronography 3) Elucidation of the dependence of the phYsical properties of thin films~ on their structures, which may change with changes in the temperature of the condensation surface. 4) Investigation of the structures of super-conducting films of metals and alloys. 5) Determination of the structure of ice, obtained by condensation of water vapour on a cooled substrate, and also the investigation of the character of ice deposita as they depend on the tot;iperature and nature of the substrate. Probably it will be possible to study the crystal structures of other liquids by condensing their vapVrs onto cold substrata. 6) Study of the thermal vibrations of atoms. 7) Studies of the influence of temperature on the structures of polymers. Card 2/3 SOV/70-4-3-32/32 Low-temperature Methods in Electronography There are 13 figures, 6 tables and 105 references, 18 of which are Soviet, 7 international, 56 English, 1 Japanese, 2 Dutch, I Swedish, 1 Nonfegian, 1 Czech, 17 German and 1 Swiss. ASSOCIATIONS: Institut kristallografil AN SSSR (Institute of Crystallography of the Ac.Sc., USSR) Sibirskoye otdelenlye AN SSSR (Siberian Branch of the Ae.Sc., USSR) Institut neorganicheskoy khimii(Institute of Inorganic Chemistry) SUBMITTED: February 19, 1958 Card 3/3. 24.2000 77123 SOV/70-4-6-24/31 AUTHOR: Dvoryankin, V. F. TITLE: Electron Diffractional Detection of Phase Transition in Thiourea at Low Temperatures. Brief Communications PERIODICAL: Kristallografiya, 1959, vol 4, Nr 6, pp 925-926 (USSR) ABSTRACT: Electron diffraction photographs of oblique texture type from a thin thiourea specimen were taken at different temperatures and compared in order to study a phase transition from paraelectric to ferroelectric in thiourea atu different temperatures. A low-temperature crystal holder was used. (V. F. Dvoryankin, B. K. Vaynshteyn, Kristallografiya, 3, 5, 504, 1958). The electron dif- fraction pictures of thiourea specimens at room tempera- ture (before cooling) and at low temperature, -14o0 c (after cooling) were taken on the same photographic plate. For the unit cell of thiourea at +200 C, the following measurements were obtained: a = 5.52 A, b = 7.65 A, c = 8.53 A; the space group D10 = Fbnn. Card 11,11-2 2h Electron Diffractional Detection of Phase 77123 Transition in Thiourea at Low Temperatures. sov/70-4-6-24/31 Brief Communications For the low-temperature phase of thiourea (-140' C) the measurements of unit cell are: a 5.4 ~ .9 A, b = 7.58 A, c = 8.58 A; space group C.2 It can be 2v assumed that the phase transition from paraelectric into the ferroeledtric in thiourea Is determined ether by the molecules' displacement, by rotation of amino groups, or by both. The author expresses his gratitude to B. K. Vaynshteyn for the supervision of this work. There is 1 figure; and 7 references, 1 U.S., 2 U.K., 1 German, 3 Soviet. The U.S. and U.K. references are: N. R. Kunchur, M. R. T'ruter, J. Chem. Soc., 2551-2557, 1958; A. L. Solomon, Phys. Rev., 104, 1191, 1956; J. W. Ensley, A. S. Smith, Proc. Chem. Soc., 53, 1958. ASSOCIATION: Institute of Crystallography of the Academy of Sciences USSR and Institute of Inorganic Chemistry of the Siberian Branch of the Academy of Sciences USSR (Insti- tut kristallografii AN SSSR i Institut neorganicheskoy khimii Sibirskogo otdeleniya AN SSSR) SUBMITTED: July 19, 1959 Card 2/12 DvoraMM) V. P. VAINSHTEIN,, B. K. "ifsQW3. Electron Diffraction Investigation of Thiourea at 200 C. and --140'c." paper submitted for 5th Gen. Assembly, Symposium on Lattice Defects, Intl. Union of Crystallography, Cambridge 'U.K. Aug 196o. DVORYAFMN. V.F.- VAYN&PfArN. B,K, Rectron diffraction study of thiourea. Aristallograftia 5 no.4: 589-599 ii-Ag 160. (MIRA 13:9) 1., Institut kristallografii AN SSSR i Institut neorganicheskoy khimii SAbirskogo otdeleniya AN SSSR. (Urew;-Diffraction) DVORYANKIN, V.F. . SOPMA conference on the use of electronic calculating machines"In the structural analysis of crystals. Zhur.strukt khim. 2 ho-4:518 Jl-Ag 161. WMA 14:9) (Electronic calculating machines-Congresses) 4 14.22_DZ) 116o 11164 11'~7 30174 151091 S/07o/6i/oo6/oo6/oo6/oo8 E132/E135 AUTHORS: Dvoryankin V F and Vaynshteyn, B.K. TITLE: An electron diffraction study of the structure of the low-temperature ferroelectric phase of thiourea PERIODICAL-. Kristallografiya, v 6, no.6, 1961, 949-959 TEXT: G.J. Goldsmith and J.G. White (Ref-73 J. Chem. Phys., Vol-31, 1175-1187, 1959) have shown that there are 5 phases of thiourea: I ferroelectric (f.e.) up to 169 OK; II anti- ferroelectric (a.f.e.) 169-176 OK; III f.e. 176-18o OK; IV a.f.e. 180-202 OK; V a.f.e. above 202 OK. They also found the positions of the heavy atoms in phase I by X-ray methods simultaneously with the present authors who used electron diffraction methods. A detailed structural study at 133 OK has now been made, (Ref.6: Kristallografiya I Vol 4, 6, 925, 1959). The unit cell has th -oup Pb2 m e space gr C Z =_4 I 2v wl and much the same dimensions as at room temperature, although the space group then is D16 Oblique texture photographs were taken at ft 133 OK and spo intensitieswere measured to about 15% Card 1/3 30174 An electron diffraction study of the ... S/07o/61/oo6/oo6/oo6/oo8 E132/E135 for 6 layer lines. 250 reflexions were measured (188 at room temperature). Phases were calculated for a trial structure including H atoms. Corrections for dynamic effects were necessary. An anisotropic temperature factor was introduced and a reliability factor of 18% was finally obtained. Various Fourier sections, projections and difference syntheses were constructed. Coordinates of the atoms were found from these and are compared with those of Goldsmith and White who only estimated the H positions from standard,bond lengths and angles. The correspondence is very close. The H-bonding system and the nature of the ferroelectric transition are discussed. on the basis of the non-planarity of the molecules when ferroelectric mechanisms are suggested for the phases II, III and IV. Acknowledgments are expressed to F.A. Brusentsov for his - assistance. Z.V. Zvonkova and Yu. Tashpulatov are mentioned in connection with their contributions to the study of the structure of thiourea, There are 7 figures, 2 tables and 23 references: 11 Soviet-bloc and 12 non-Soviet-bloc. The four most recent English language Card 2/3 30174 An electron diffraction study of the... S/07o/61/oo6/oo6/oo6/oo8 E132/E135 references read as follows: Ref- 7: as in text above. Ref.13: G.A. Jeffrey, R. Shino. Acta crystallogr., Vol.121 447-455, 1959- Ref.19: Costain, Downing. J. Chem. Phys.9 Vol-329 158, 196o. Ref.23: Chlbas M. Toyama, I. Morino. J. Phys. Soc. Japan, Vol. 14, 379-380, 1959. ASSOCIATION: Institut neorganicheskoy khimii Sibirskogo otdeleniya AN SSSR (Institute of Inorganic Chemistry, Siberian Filial AS USSR) Institut kristallografii AN SSSR (Institute of Crystallography, AS USSR) SUBMITTED: August 18, 1961 Card 3/3 1:1,tto lilt kigqv 27877 S/020/61/140/001/013/024 ~104/B109 AUTHORS. Vaynshteyn, B. K., and Dvoryankin, V. F. TITLEt Mechanism of a ferroelectric phase transformation in thiocarbamide at 1330 K PERIODICALt Akademiya nauk SSSR. Doklady, v. 140, no. 1, 1961, 111-114 TEXT: The character of C - S bond in thiocarbamide (Vq~(NH 2)2 ) has been studied repeatedly. In previous papers the authors described structural analyses of thiocarbamid6 by means of electron diffraction studies. (Kristallografiyaq A, 925, (1959); ~, 589 (1960); .~~ 504 0958)). Similar studies were made by G. J. Goldsmith et al. (J. Chem. Phys., 31, 1175 (1959)) who proved the existence of five phases. Using the terminology introduced by Goldsmithq the authors proved a phase transition at 1330 K in the ferroelectric phase I which exists below 1690 K. In the anti- ferroelectrie phase V which exists above 2010 K they electronographically localized the position of a hydrogen atom. The structural formula of Carcl 1/4. 27877 S/020/61/140/001/013/024 Mechanism of a ferroelectric ... B100109 phase V of thiocar'baTicle which is shown in Fig. 1 is discussed at length. A threedimensional representation of the potential levels is made for exactly determining the hydrogen atoms.in the phases I and V. It could be proved for both phases that the HII atom does not lie in the same plane as the other heavy atoms. It is suspected that in all five phases of - /I thiocarbamide this hydrogen atom does not lie in the plane of the other atoms. In a detailed study of the structural change of thiocarbamide in a ferroelectric phase transition it is demonstrated that the ferroelectric properties of phase I result from the unevenness of its molecule and from the formation of strong hydrogen bonds at low temperatures. The molecules of phase I are less symmetric than those of phase V. Finally, the authors discuss possible variants of the structure of the phases II, IIIp and IV of thiocarbamide. Z. V. -Zvonkova and Yu. Tashpulatov (Kristallografiya, 1, 'j53 (1958)) are mentioned. There are 3 figures and 16 referencest 7 Soviet and 9 non-Soviet. The references to English-language publications real as.follows: Card 2/4 27877 3/020/61/140/001/013/624 Mechanism of a ferroelectric ... B104/B109 N. R. Kunchur at al., J. Chem. Soc., 1958, JulY (517), 2551; P- Vaughan, et al., Acts, CrYst- i ~, 532 0954); H- J. Grenvill--,.-,Iells, Acta* Cryst., 709 (1956); J.vl. Emsley*at al., Arch. Sci.j 12f 122 (1959)- ASSOCIATION: Institut kristallografii Akademii nauk SSSR (Institute of Orystallography of the Academy of Sciences USSR) Institut neorganicheskoy khimii Sibirskogo otdeleniya Akademii nauk SSSR (Institute of Inorganic Chemistry of the Siberian Department of the Academy of ScienGes USSR) DVORYANKIN, V.F 0 I Diseartati*n defended for the degree of Candidate of PhysicomtLexattrAl Sciences at the Institute of Crys W lography In 1962: "Blectronographic Structual Investigation of Sigh-Temperature and Low-Temperature Thiourea Phases." Vest. Akad. Nauk:5SSR. No. 4, Moscow, 1963, pages 119-145 Iff OMMIfir V.F.; BRUSENTSX7. F.A. .iCorrectiono to normal equations in the least squares metbod for more accurate definition of crystalline structures. Kristallografiia 7 n%6.*954-956 N-D 1~2. (MIRA 16-4) 1. Institut noorganicbeskoy khimii Sibirskogo otdeleniya AN SSSR* (Least squares) (Differential equations) BRUSENTSEVp F,A*; DVORYANKINg. V.F. Analytical repreaentzition of the atomic factors of scattering for electrons. Kristallograftia, 8 no.2:260--263 Mr-Ap 163. (MIRA 17:8) 1. Institut neorganicheskoy khimii Sibirskogo otdeleniya AN SSSR. . - :~ U - v I i I P!,L p L ~ U~ ~- - , , -..- . .- - - - - - - - - - f~- f I m t r - , .~ . I I - -- I . i ACCESSION M 04012272 S/0070/64/009/00110020/00'25 KUTHOR: Dvqryankin., V. F. TITLEt The effect of thermal movefiient of atom3 on the distribution of the atomic potential L SOURCE: Kristanografiya, ve 9j, no. 1. 1964j, 20-25 TOPIC TAGS: . thermal movement, atomic the=4 movement., atomic p#ential., potential distribution, Fourier transformatign,, hydrogen ABSTRACT : Strong thermal movement of atoms sometimes makes it impossible to locate precisely the position of atops or, qven more, to determine their electron states. Because of this an investigator is irorced to use a low-tgmperature technique. In knowing how thermal dovement 'iffects the potential'distributioa of an atom, however, one may define the approximate optimal experimental levels at which the position of the atom may ~e determined and its electronstate ascertained. To compare theoretically computed with experimental distribution, it is necessary to consider the effect of a break i~'the Fo~rier series* In this study the author -h.as examined the effect of thermal movement on distribution of potential both with Card 1/2 A L ACCESSION NR: AP4012272 consideration of the break in the Fourier sepies and without consideration of the break. The first, which is found td be essAntial, yields a distribution function that may be written IT, (0) 1br == (D (X=ab00 bit D w exp 2 87r2 where D(t) - 4 71r (r), r to b ~ I and X sin 0 The author then applies this function to the speci.fieBexample of the hy%rogen atom* Origo art-* hass 35 formulas. ASSOCIATION: Institut neorganicheskoy khimii Sibirskogo otdoleniya AN SSSR (In3ti- tute of Inorganic Chemistry Siberian Department AN SSSR) SUB11-UTTED % 15Apr63 DATE AGQ2 lqFeb64 E14CL: 00 SUB CODE: PH NO REF SOV 1 005 OTHER: 003 Card 2/2 ACCES67W N01 AW,012'273 8/0070/6tt/009/001/0026/0031 AM-110,:S: lhwryrtnki~r~i. F.; Kolorniychuk#'.V. Hf, '2111'Pj: The affect of thermal movement of the hydrogen atom on the distribution of its pot~rxtial SOUAC'2j: Kristallodraf iya, v. 9, no. 1, 1964p 26-31 TOPIC TAGS- thermal movement, potential distribution, atouio thermal movement, hydrogaii thermal movement, hydrogen potential ABSTRACT: This is a completion of V. P. Dvoryankin's immediately preceding article (Kris tallograf Iya, 9, 1, p. 20, 1964). - The authors have used the:.Vunction for distribution of potential for the hydrogen atom derived,in the indicated paper, and they have made computations for different values of the isotropic temperature factor and different values.of tsin 01 The results are presented in several long tables. Prom these results thb authors conclude that isotropic thermal move- ment of a hydro-en atom clearly affects its distribution of potential. With 01 increase in the temperature factor, there occurs, first, a decline in the distri- bution function and, secondly, a "smearing" of the potential. Concerning the Card 1/2 AUCSSSION NOt AP4012273 break in the Pourier series, this clearly affects the distribution of potential also. Vith increase in the temperature factor# the effect of this break declines.. Decrease in temperature factor leads to increased distortion of the potential distribution, and diminution.in the break may occur at lower temperatures. Cooling a sample, therefore, causes decrease in value of the temperature factor and incree-cle -in the value of (S The problem lies in 3electing the optimal conditions. Orig. art. has: 2 filsureso 4 tables, and 7 formulas. ASSOCIATION: Institut neorganicheskoy khimii.Sibirskogo otdeleniya AN SSSR (Institute of Inorganic Chemistry Siberian Department AN SSSR) SUBMITTED: 15Jun63 DATE ACQ: 19M& ad, 00 SUB CODEx PH NO REP SOTs 004 OTMI 004 Card 2/2 KOIA)MIYOMI V.N.,-_RVORTL Electron diffractiod deternination of,the position of hydrogen atoms in HH4Br. Kristallograftia 9 no.1:50-56 Ja-P 164. f I (MIRAL 17:3) 1, Institut neorganicheskoy khimii Sibirskoga otdolenlys, AN SSSR. ACCESSION NR-. AP4024984 S/0070/64/009/002/m67/017() AUTHORt Dv-3ryankin, V,, TITLE: Analytical representation of 'the integral character'isties foe distribution. of electron density and potential in atoms SOURCE: Kristallografiyas V. 9, no. 2p 1964, i67-17o TOPIC TAGS: atomic factorp atomic factor curvej, analytical representation, elec- tron densityp distribution density,, potential distribution) integral characteris- tic s cattetirg ABSTRACT: The author begins with two basic expressions for analytical representa-, tion of.curves for atomic factors in scattering: (x) Tj At ex~ 6i;;7 Av k (z) a,. e. (2) Cam 1/2 ACCESSION NRt AP4024984, In these formulas, x - An G/A and tfie corresponding coefficiints are comiated by the method of least 6quares. On thi basis of these formulas and on the basis formulas for computing integral charac~eriatics., the author has obtained analyt4- Cal representation for the integral characteristics. These characteristics for scattered material.in atoms and for continuous and discontinuous Fouiier series are designated 0 Ekpre4sions are then obtained for these two for n ;60 and on dis all values of n from 1 to B. Orig. art'* bass 19 formulas* n ASSOCIATION: Institut neorganicheskoy khim:Li Sibirskogo, oltdalaniya AN SSSR (Institute of InorganiorMemistrys Siberian 'Divislon',AH SSSR, sumiTTED: 15Apr63 DATE AcQ:. iapr64 ENCL: 00 SUB CODE: PH NO Ra SOV: 003 OTM: 006 2,12 Card DVORYANKINJ, V.F.; BRUSE11TSEV, F.A. Modification of the method of least squares in the structural .analysis of crystals. Kristallografiia 9 no-4:548-550 JI-Ag 164. (MIRA 17:11) 1. Institut neorganicheakoy kbimii Sibirskogo otdeleniya AN SSSR. ~ -; -1~- -, - 1 1 ~. - - * . . . . - : * ~ I " ! --- ---- -- - SOBOLEV, Ya.V.; BOKIYI GB,; LISOrVAN, VI.,- DVORYANKIN, V.F. Natura of extra refled;ttons of the "tericail ty-pe on laus diffraWon patternB of natural diamonds. Zhur, struke khims 6 no,33468-40 My-Te f65. (KMA IM) 1, Irstitut neorganIchaskoy khImli Sibir.4kogo otdolenlya AN SSSR I institut radlotakhniki AN SSSR, K.I.; IWORYMIXIN, v4F. Dc--a-maination ol" the ru'rztz-ucruro rZ. t;_.--j.-1. fA-21-1- ir, ii'.frractoion ipmthod, lava zlO AN b"il-11 vo*7 iti~mo t~~ !-Ina:?;6~-70 165a k ~;~, i -,,~ -. *...