SCIENTIFIC ABSTRACT FEDODTOV, V.S. - FEDOTOV, YEKATERINA DMITRIYEVNA

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000412810001-4
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: January 3, 2017
• Document Release Date: July 31, 2000
• Sequence Number: 1
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

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Dissertation: "Geonorpholok and Cointemporary Processes of Relief Formation of the Central
- I
Part of the Kuznets Ala-Tau.' Cand Geog Sci, Moscow Stato PedagogL;al Innt, 11.1loscow, 1953,
Referativrjyy Zhurnal--.Geologi-/ap Geografiya, Moscow, Jul 54,,
SO: SUM No. 35b, 25 Jan 1955

OVI
USSR/Geology
Card 1/1
Authors Krigers N. Lj and Fedotuv, V. S.
Title I Loess (rocks) found at the Oka river basin
-Periodical s Doklo.AN SSSRt 96, Ed. 2,, 367 370., May 1954
Abstract s Judging by the stratification the loess discovered at the Oka
river basin can,be divided into the following categoriest water-
Institution
Presented by
separating loesss,beam type loess and loess of river beds. Basic
data regarding the properties of fluvio6lacial loess of water
separating section3 (terrace-like plateau) are included. Tvivnty
three references; 1 USSR dating 1892. Table.
Academician V. A. Obruchev) December 29, 1953

7& V
Country USSR M
Category: Cultivated Plants. Fruits. Berries.
Abs Jour: lZhBiol., No.22, 1958, No 100477
Author Fedotov, V.S.
Inst . ..............
Title Terracing of the Slopes for Vineyards.
Orig Pub: Sadovodstvo, vinoFradarstvo I vinodeliye Moldavii,
1957, No 6, 37-39
Abstract: The effect of terracing, carried out In 1953
according to P. V. Ivanov method, on the pheno-
manon of erosion Is charaoterizied. It Is noted
that with precipitation of 25-35 millimeters,
a longitudinal run-off causing wash-outs Is
observed. It to recommended to impart to the

Tum M_
CATEGORY GlAtiviAted 111antz. Fraits. Berries. Y.
APS. JOUR. RZY011ol.) Poll 2? 1956, No, IC4809
AUTHOR 1".redotov, V. "
_
A,r ;,

DJST.
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TITLE Prelimin!ivy of tno Stubjes on the Terracine, of
E%lol
t;s 1'r-c Vincytirda.
ORIG. PUS9. IZV. V.0L6. fil. j- L..;Lli, 15~'_7, Vu. 5 (42), 8.~-lu_l
A;?STRACT In cop:,.nially in Jt.% certtr)tl vciiojis. thar,! #Ara
coni;icerabje of 6ecAlle aric, .31,eej, which itro
eitltcr Jna,ifficicntlly utillze6z .4a tj6riciilturc or are not
utili,zvd at ali. The uauol cultivqtiori of these sioroas
for vineyarab to it strong ct:veloij-utitit of erosion
processes. In 155'3, tvrrbcinx_ of a ij-hactere sloj~e with
the Grtide of 250 wt:z doue., in bullboicskJy rn~cii ~iccorcalrj,,
To ~ac Byste-ji clevc-lol.ed at. the Soil It.stitut-ti fif the af-
f iliote of the oc-fciewy of icienceii. In Vic sprinc of
I
the jj~jntltig of t~e grapevines was carried out. In
tile summer of there were hobvy ctownpours (up to 2~,
CATID: 1/2
CM-TRY
CAT S.-OPY
ApS. JOUR. KhBiol.., 10
A U T,. 0 R
DJST.
T ITLE.
OPTG. FUJI.
It Ijr T! CT
!CAmt 2/2
-,oa) ono i n ttic Fnim.,vr of
Ila
(if firi..
t,;!rj,ucus of aivrs in width mic: V PrOv%;C, to
I I i tl 1 .I crtirmetvri5tic of tile wlitt:r unQ
,,Atl,jtjo,j,jj c:n1juito.,:j or tho t#jrrucef) ia itea- TA I le
avera_iu r,:servf3 or uv)istura in oiie-mot,;r Ijyer of the
tex-ract, soil was ctuout 1CO AM anr, tile `JJxil`11J` 168 ra;.
K. :,crtul:I~Itov
124

SMIINOVA, I.N.; BALEZIN, S.A.; GOLUANOV, K.N.; Prinimali uOmstlye:
DEROYANOV, L.A.; 11IRYEVICH, A.I.; WHO8,1YFV, P.1,; F~"XTCV, V.3.;
CHURILOV, Ye.M.
Effect of organic additives In fuel on the corrosion and wear
of internal combustion engines. Uct,. zap. MGPI no.146:127-146
160. (MIRA 15:4)
(Gas and oil enginec-Corrosion) (Addition reactions)

FFDOTOV, V.S.
Pemote hybridization in the vetch tribe of the Leguminossa
family. Biul. Glav. bot. sada no.53:23-27 164.
- (AURA 17:6)'
1. Nauchno-issledovatellskiy institut sel'skogo khozyaystva
tsentralInykh rayonov nechernozemnoy zony Nenchinovka,
Moskovskoy oblasti.

11t

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jlft~tFKV %it lallialkikis In MiLms slitvicx t lupines and the dvgrx-r if thrir rtm"
aft
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det.l. from tin. Evotthtenty of the Plat. UbWaftl thr"Milh the Kikill of wwral 'Ir'n.

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%114*w A
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ew -lietirs MnY ftwnkx wrte hund lwwtk-*Uv Irre firmil alkiah4d 41"1 thu.
ultable fur hwage
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-Yv- so
The production of lupine seeds Mookwat Goa. izd-vo selkhos lit-ry, 1954. 87 pa
(V pomoshch' agronomu n& proizvodatva)

/?- "-, Z 'I ~ I ". ., ,,/
_/ "-, 11 - / ~V ) Y _-
I
ISDUWV, V.S.
Oft MMOMMO mmmu"WAS"2W.11".
Crop fellow on sandy soils.
Zealedelie 5 ao..5:49-51 My '57.
NMA 10:7)
(Latvia--Fallowing)

Country : USSn
Category: Cultivated PLants. Fodders.
Abs Jour: I=iol., No 11, 1958, No 4W
Author Pedotov, V.S.
Inst
Title On Seed Grow*-'n[; of Fodder Lupine
Oria Pub: Selektaiya i oemanovodstvo, 1957, No 6, 43-47
Abstract: No abstract.
Card Vi
14
M-93

the of
FEDOTOV, Vo S. Cand Agr Soi -- "Study of problems of. ~terraoing,slopes Aid- a,.dk
vineyards in Moldaviya." Voronezh, 1960 (Min of Agr RSFER. Vorobeth Agr Inst).
M, 1-61, 203)
-322-

fftai] Gorokh. Moskyao Gov. izd-vo nellkhoz. lit-rjo 1960o
257 P. (Peas) (Mnu 14, 10)

FEDOTOV~ V.S.; PAPIIO~ L.I., red.; TARAKANOVA, V.N.., tekhn. red.
(Terracing alpes for orchards and vineyards in Holdav'Aal
Torrasirovan!e sklonov pod sady i vinogradniki v Moldirvii.
Kishinev, GOO. 12d-vo "Kartia moldoveniaske) 1960, 69 P.
~MIRA 15-4)
(Moldavia-Terracing) (Moldavia-Fruit culture)
(Moldavia-Grapes)

_'FEDOMV._Y_iktor_Sem&n*mi*h; PANIN, V.Ya., red.; MUGINA, L.P., red.;
POLONSKIY, S.A., tekhn. red.
(Terracing slopes for orchards and vineyards in Moldavir.]Ter-
rasirovanie sklonov pod sady i vinogradniki v Moldavii. Kishi-
nev, !zd-vo "Shtiintsa * 1961. 174 p. (MIRA 16:2)
(Holdavia-Terracingi (Moldavia-Frait culture)

-F-EDQ-TQ,V Vasiliy Stepanovich kand. veter. nauk; FEDOTOVSKIY,
A.P., red.; SYCWV-A-. V.A., tekhn. red.
[The "Tundra" Collective Farm in the seven-year plan] Kol-
khoz "Tundra" v semiletke. Murmanak, Murmanskoe knizhnoe
izd-vo, 1961. 28 p. (MIRA 16s6)
(Murmansk Province-Stock and stockbreeding)

.Z~DOTOV, Vaailiy Steparovich, kand. veter. nauk; SOKOLOVA, R.K.,
tekhn. red.
(Antibiotics and biogenic stimulatore in animal husbandry)
Antibiotiki i bioistimullatory v zhlvotnovodBtve. Murmansk,
Murmanskoe knizhnoe izd-vo 1961. 28 P. (MIRA 16:6)
(Stock and stockbreedingi (Antibiotics)
(Tissue extracts)

YBDOTOY, V.S.. k-ndidat veterinarnykh nauk.
- "rJ"A~Ijfjj"
Sheds as a measure for controlling nacrobacillosis in reWeer.
Veterinariia 30 no.8:50-53 Ag 153. (MLRA 6:8)
1. llauchno-inaledovatellakiy institut polyarnogo xemledeliya.
shivotnovodetva i prowlslovogo khozyaystva.

FICDOTOVO VIISI, kand. vat. nauk.
collective farm beyond the Arctic Circle. Neuka i pered. op.
Y sellkhos. 7 no.12:59-60 D 157. (KIIA 11:1)
(Arctic regions--Colleotive farms)

FAMOVO V4 kand. vet. vauk (HarrwLnskaya olerevedcheskfva stantstya),
On a collective door farm. Hauka I pored, op, v sellkhoz, 13 nojr
28-29 Mr 158. (MM 110)
(Murmansk Province-Deor)

FEDOTOVS V. S.
Opyt vypasa olenei v izgorodiakh I mery bor'by a zwkro-
batsillezom (Tending deer In Tenced-in areanj, and control measures of
necrobacillosis). Murriansk. Kn* izd.p 1959P 42 pages with illustrations,
Price 815 k,,j 3000 copies,

O.TGV V 3. kand. vetor. nauk; FTDOTOVSKIY, A.P., red.;
. j N,F.j tekhn. red.
(pacturing reindeer in enclosures and measures for necro-
bacillovio control] OpIt vypasa olanei v izgorodiakh i
mery borlby s nakrobataillozoin. Fnmansk, Humanskoe
knizhnoe izd-vo, 1959. 40 P. (MIRA 17:1)

1. TAOMROV, Yes 14. and FEDOTOV, V. V.
2. ussit (m))
4. Sand - Zhitomir ProvinO3
7. Geological report of the Dnepropetrovsk party for vitreous sands (on the activities
of 194'0. (Abstract.) Izv.Glav.upr.gool.fon. no. 3, 1947.
9. Monthly LiRts of Russion Aobistidnap Library of Congress, !!arch 1953, Unclassified.

YUMOLATIVs P.V.; TEDOTOV. V.V.; SHCHICRBAKOV-, N.P.; GATTANIDI, L.Dep
takhn.r"v---"--------
(Decrees and Instruction@ on labor for agricultural workers]
Gabornik postanoylonli I rasporiashanii po trudu dlia rabot-
nikov sel'skogo khosisistya. Moskva, Ind-TO X-Ta sellskogo
khos. RSFSR. 1958. 252 p. (MIRA 12:6)
1. Russia (1917- R.S.F.S.R.) Upravleniya normirovaniya truda
i sarabotnoy platy.
(Agricultural law* and legislation)

14 F3W222j,.Lj,, mayor meditsinskoy clitzhbY
Ratimation of the number of litter bearers for evacuation of
the wounded. Voon.-med.zhur. no,6:18-19 Je '59.
(M1RA 12:9)
(WOUNMW AND SICK
evacuation, estimation of number of litter
bearers (Rua))

JEDOTOV, V.V.; mayor meditsinskoy sluzhby
Controlling unreal attitudes in carrying out instruction in naval
medicina. Voen.-med. zhur. no.8:14-17 Ag 160. (MIR& 3-4:7)
(MEDICIEN, XAVAI.-STUDY AND TEACHING)

L 209611-66 EWT(l) SUB DD
SION NR: AP5022850
UR/0375/65/O0O/o0q/oo6O/oo6l
0v.
~AUTHOR- Wasnikov, A. *P. (Docent) (Lieutenant Colonel of ir.-dical service); Fedot
JV. V. (Candidate of medical sciences) (Lieutenant Colonel of medical servl~e_T-7`-
iTITLE: Evaluation of conditions in compartments of a sunken submarine by, a physician-
lphysiologist
SOURCE: Morskoy sbornik, no. 9, 1965, 6o-61
TOPIC TAGS: human physiology,,oubmarine, rescue operation, survival training, dub-
marine training
ABSTRACT: The authors propose a graphic presentation of tescue operations In a sunken
submarine, stating that existing tables are not sufficiently descriptive and are in-
'complete in their evaluation of an emergency situation (see Fig. 1 of the Enclosure).
~,Such a graphic system could be put on a form 50 x 100 cm. The authors go on to pro-
,pose hypothetical situations which could occur in a sunken submaxiine, for the bene-
:fit of a physician-physiologist involved in rescue operations. The benefit of a
graphic approach to submarine rescue operations is.that it aids in developing clear-
cut habit patterns in officers and.savea decision-making time. The authors' approach
has been incorporated into the training practice in the' Soviet Navy and at the Mili-~
tary Medical Academy imeni Kirov.--Orig.-art. has: 2 figures. [CDj_
__~Jpcrd, 1/~~

ASSOCIATION: none
SUBMITTED: 00 ENCL., 01
NO REF SOV: ~000 OTHER: 000
SUB CODE.- LS Ms
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res"WratIms

Fn--Fkmp 'r'. Y&.
Dissertation: "Investigaticn of the Work of a Wind Motor With the Impeller %hind the
Tower." Cand Tech Scit Power Engineering Inst Imeni 0. M. Krzhizhanovsklyt Acad Sci
USSR, Moscow, Oct-Dee 53. (Veatnik Akademi-i 11auk, Moscow, Jun 54)
SO: SUM 318p 23 Dec 1954

FATBUY, Yefim Mikhaylovich, doktor takhnichookikh nauk,professor; ZHXLI-
GOVSKIT, A.T., kandidat takhnichookikh nauk, doteent, radaktorl
IMKTU4.xjA*,, kandidat takhnicheskikh nauk, retsenzent; MOIRLI,
B.I., tekhnichankly redaktor; SHIKIN, S.T., takhnichaskiy redaktor.
(Wind motors and their use in agriculture) Vetrodvigatell i ikh
primenente y sellskom khosiaistve. Isd.2-os, dop. i perer. Moskva,
Gos.nauchno-tekhnAzd-vo mashinostrolt.lit-ry, 1957. 322 P,
(MIRA 10:6)
1. Chles-korrespondent Akadenii sel'skokhozyaystyennykh nauk iment.
V.I.Ionina(for Fateyev)
(Wind-mills)

YATJYBV. U.N., prof., oty.red.; BTSTRITSKIT, D.E.. red.; YASHMICH,
K.P., red.; KARKISHIN, A.T., red.; SMOROV, T.R.. red.;
YKDOTOV. T.Ya., rad.1 IRANUMC, K.O., red.; SHCUKOVICH,
rGOWVKO. T.N., red.izd-yo; GUSIVA, I.N., takhn.red.
tProbleiss in wind power] Voprosy vatroonergatiki. Koskma.
Ixd-vo Akad.u4uk SSSR, 1959. 135 P. MRA lzt6)
1. Akademiya sank SSSR. Inergeticheekly Institut. 2. Chlen-
korrespondent Tsesoyuxuoy akademii sallskokhozyaystvannyk%
nauk in. V.I..Lonina (for Fateyev).
(Wind power)

FEDOTOV, Ya., kand.tekhn.nauk
Parameters and equivalent circuits of transistors.
33-36 3 '62.
(Transistors)
Radio no.9s
(MIRA 15:9)

FMOTOVp Ya., kands takhn, nauk
C.L
Parameters and equivalent networks of transistors. Radio no.10:
37-40 0 '62. (MIRA 15:10)
(Transistors)

FEDOTOV, ra.,.kand.tekhn.nauk
Transistor technology and miniature electronic equipment. Radio
no.11:29-32 N 163. (MIRA 16t12)

Card 1/1 Pub. 90-4/11
Author : Fedotov, Ya. A.
Title : Methods for Calculating Amplifier Circuits Using Transistors
Periodical : Radlotekhnika, 10, 37-43, Aug 1955
Abstract : The author in a general discussion examines the fundamental
principles of the control of collector current in a transistor
triode and makes observations on the choice of systems of pa-
rameters which will characterize transistors and be of value to
practical utilization of transistors. He delineates the fields
of utilization of junction and point-contact zypes and discourses
on the need for a unified theory of amplifiers (to encompas*s
tube, transistor, dielectric, and magnetic types).
Institution
Submitted July U,.1955

YNDOTOY
A9-y,,,Aud?rey&vich; KULIKOVSKIT, A;A., redaktor; BIM, A. L,
.,~Jf
"'"'~r;"itor:DZHIGIT I.S.. reda:ctor;TELIN, O.G.. redaktor; MDZH-
Zfl3V=V, B.N.. redaktor; SHIMY, A.D.. redaktor; TARABOT. 7.I.,
redaktor; TRAMM, B.F.. redAktor; CHICHIK, P.O.. redaktor;
SHASHMUR. V.1., reduktor.; LARIONOV. G.Ts.. tekhnicheskly redaktor
(Crystal triodes] Kristallichemkie triody. Moskva, Gos.energ.
isd-vo, 1955 94 p. (Massovaia radiobiblioteka no.216)
(Eleciron tubes) (MIRA 8:9)

redaktor- SATANOVSKAYA, B.G., redaktor;
KORUa - Nflf.,44tetifil~hesk'iy r#edaktor
[Transistorm and their use; collected articles] Poluproyodnikovye
pribory i ikh priatinenie; obornik statei. Moskva, Izd-vo "Sovetakoe
radio*" No-l- 1956. 622 p. (mLRA 10:4)
(Tratisistorm)

Call Nr: TK7872.773T42
AUTHOR: Fedotov, Ya. A.
. .................,
TITLE: Instead of Radio Tubes (Vmesto radiolampy)
PUB. DATA: Izdatelletvo "Sovetskoye Radio", Moscow, 1957,
63 pp. Number of copies not given
ORIG. AGENCY: None given
EDITOR: Ed. in Chief: Volkova, E. M.
PURPOSE: The pamphlet is intended for large groups of readers
unfamill-sir with.radio engipqering and radio electronics.
COVERAGE: The pamphlet represents a popular exppsition of basic
semiconductor matirials used in the manufacture of semi-
conductor devices. It describes the diverse fields in
which radio tubes can be used, mentions their short-
comings, anti the possibilities emerging in radio elec-
tronics by.substituting semiconductor devices for radio
tubes. There! are no references and no personaliti6s.
Card 1/2,

Instead of Radio.Tubes (Cont.)
TABLE OF CONTENTS
Introduction
What are Semiconductors?
"Attention! Moscow Speaks"
"You will Now Speak with Vladivostok"
In Any Weather
"Mechanical Brains"
Radio Tubes and Their Shortcomings
Instead of a Radio Tube
Semiconductor Devices Today and Tomorrow
AVAILABLE: Library of Congress
Card 2/2
Call Nr-. I'K7872.773T42
3
5
16
24
30
34
41
4t
54

PHASE I BOOK EXPLOITATION 1185
Poluprovodnikovyye pribory i ikh primenenlye; abornik statey, vyp.
II (Semiconductor Devices and Their Uses; Collection of
Articles) no. 2) Moscow, Izd-vo "Sovetskoye radio," 1957. 398 P.
No. of copies printed[ not given. '
Ed. (title page): FedQtiv, Yakov Andreyevich; Ed. (inside book):
Ivanushko, N.D.; Tech'a Ed.: Sveshnikovp A.A.
PURPOSE: This book is addressed to physicists and electronics
engineers interested in semiconductor devices and their applica-
tionsin electronics.
COVERAGE: This is a col.lection of articles on semiconductor devices
and their applications. There is an insert containing a circuit
diagram of the measuring instrument deicribed in t1he article on
P. 331. No personalities are mentioned. There are 84 references)
of which 33 are Soviet (including 3 trans,-ations), 1 Swiss, 6
German, 42 English, imd 2 French.
Card 1/5

Semiconductor Devices and Their Uses (Cont.) 1185
TABLE OF CONTENTS:
Shmartsev, Yu.V. Producing Germanium for Semiconductor Devices 3
Artyukhova, O.A., Vaksenburg, V.Ya., Petrov, L.A., Saltykovao Ye.S.,
and Samokhvalov, M.N. New Types of Germanium P-n-P Junction
Transistors 46
Kamenetskiy, Yu.A. Equivalent Circuits of Transistors 78
Kozlov, V.A. Obtaining a Family of Volt-Ampere Characteristics
for Transistors on IM Oscillograph Screen 142
Petrov, L.A., and Sytt3ry, G.F. Variations In the Parameters of
P-a-P Alloy-type Germanium Transistors as a Function of the
Material and Quiescont Point 149
Card 2/5

Semiconductor Devices and Their Uses (cont.) 1185
Petrov, L.A., and Sytyy, G.F. Effect of Resistivity of Germanium
on the Temperature D3pendence of Parameters of Jiinction Tran-
sistors 161
Borisov, A.I. Ambient remperature Dependence of Static Volt-
Ampere Characteristics of Junction Transistors 169
Popov, I.A. Transient Processes in Junction Transistors During
Application of Step*Toltage,,3 18T
Zakharov, V.N. Methods of Determining Maximum Power Amplifica-
tion Frequency and Kaxinum Generated Frequency of Transistors 205
Sherov-Ignatyev, G.P. Selecting Conditions of Power Supply for
Type SlD Transistors Used for Amplification of Small Signals 223
Voroblyeva, Ye.F. Input Impedance of a Point-contact Transistor
HF Amplifier With Grounded Base And Detuned Output Circuit 242
Card 3/5

Semiconductor Devices and Their Uses (Cont.) l185
Garyainov, S.A., and Pripolov, E.Ya. Investigation of a Point-
contact Transistor Video Amplifier 263
Kobzev, V.V., and Berestnev, P.D. Problem of Designing High-
frequency Self-excited Oscillators Equipped With Junction
Transistors 288
Tarasov, V.L., and Shev;yrtalov, Yu.B. Investigation of Tran-
sistor Detectors 298
Konev, Yu.I.. Phase-sensitive Transistor Amplifiers 317
KopylOVBkiy, B.D., and Sytyy, 0. F. Measurement of Modulus
and Phase of Current Amplification Factor in Transistors
at High Frequency 331
Gallperin, Ye.I., Oordonov, A.Yu., and Fomchenkov, V.M. Design
of Point-contact Transistor Trigger Circuits Ensuring Inter-
changeability 340
Card 4/5

Semiconductor Devices and Their Uses (cont.) 1185
Zalkind, A.B., Matyukhin,, N.Ya.p and Hoonitskiy, O.V. Current
Pulse Switching With Transistors 353
Valitov, R.A.., Aleksandrov, A.I., and Akulov, I.I. Transistoriz-
ed Measuring Instruments 366
Selivanov, S.A., and Selivanov, A.S. Transistorized Radivnega-
phone 377
Valitov, R.A., and Simonov, Yu.L. Frequency Stabilization of
Transistorized Oscillators With ;he Aid of Ticon[trad-s name]
ind Varicond(barium titanate] Capacitors 383
Voinov, B.S. Miniature Wide--band Tank Circuit 386
AVAILABLE: Library of Congress
JP/mfd
Card 5/5 2-12-59

FC-'DC)T(j~J1, 109-9-12/15
AUTHOR: Fedotov, Ya'. A.
TITLE: Frequency Characteristics of Junction Transistors.
(Chastotnyye svoyetva ploskostmykh triodov)
PERIODICAL: Radiotekhnika i Elektronika, 1957t Vol*.II9 Nr 9,
pp'.1189 - 1199 (USSR)
ABSTRACT: One of the very important parameters of a Junction trans-
istor is its current amplification factor, a and its
limiting frequency, f. 0 which is the frequency at which a
irops to 70% of its low frequency value. The factor at 'aB
a function of frequencyt is normally measuredin a grounded-
base circuit (see Fig'.1) in which the variable frequency
input voltage, E,, is applied to the emitter through a large
resistancep R9 alLd the output signal is measured across a
small resistance R. connected in the collector circuit.
The current flowing into the transistor is first determined
by disconnecting the transistor from the circuit and connect-
img R and R H in series. The transistor is then inserted
into the-circuit and its collector current is determined by
I
card 1A measuring the voltage across R It is shownt however#

109-9-12/15
Frequency Characteristics of Junction Transistors.
that the measurement of a in the above circuit-is in-
accurate, especially at higher frequencies due to the pres-
ence of stray capacitances between the emitter and collectorg
emitter and ground, and collector and ground. The error is
also a function of the input resistance of the transistor.
It is concluded by examining some high frequenc transistors
that at frequencies of the order of 30 - 40 ic7s the errir
in the measurement of a may be as high as 20% (see Fig.4).
Furthermore, it is found that au indirect measurement of a
and f(, by measu3ring the limiting frequency fb of a
grounded emitter circuit and evaluating f a from
fb = fR(1 - ao) (Sq. (7)) is also inaccurate (see Fig.6). It
is concluded therefore that the frequency characteristic of
a transistor can better be represented by its maximum power
amplif icatiohi I K~ tiav
,P . This is an invariant for a given
transistor dnd it is expressed by-:
K? MeLKC ~w 0.22 (Eq.(11)) or by
02
Card ~A
109-9-12/15
Frequency Characteristics of Junction Transistors.
K (Eq a (l 2 where ex = 0.22WOWs
P V1SKr_ fz rdUK
where rW is the base resistance and 0. is the collector
capacitance of the transistor. Parexieter N in Eq.(12) can
be regarded as a rigure of merit for the transistor. From
the above it should be clear that a frequency at which the
maxiTm, powsr amplification of the transistor becomes unity
can be regarded as a limiting frequency. This frequency
would also be equa3. to the transistor maximum oscillE,ion
frequency'. In this manner it would algo,be possible to de-
termine f . indirectly ( fmax = _/M ). Maximum amplifi-
cation of a large mmber of transistors as a function of
frequency was measured and it was found to obey the law as
given by Eq. (12) (see Fig.8). This law is valid only at
comparatively high frequencies. The limiting frequency was
also determined by means of an oscillator (see Fig.9) and
was found to.be almost coincident *ith the frequency at which
Card 3A the maxirm, gain,, becomes unity I.

109-9-12/15
Frequency Characteristics of Junction Transistors.
There are 9 figures, 7 references, 3 of which are Slavic.
SUBMITTED: October 11, 1956..
AVAITART- - Library of Congress.
Card 4/4

AUTHOR: ', FEDOTOV, Ya.k.
TITLE: A-U Sci Conf dedicated to "Radio Day," Moscow, 20-25 May 1957.
"Frequency Propertiea of Drift TTiodes,"
PERIODICAL: Radiotekhnike i KLektronika, Vol. 2, Not. 9, pp. 1221-1224,
1957, (USSR)
For abstract see L.G. Stolyaroir

r
AUTHOR: Fedotov, Ya.A. 109-10-5/19
TITLE: Influence of the Distribution of Impurities in the Base
of Drift Transistors on Their Frequency Characteristics
(Vliyaniye raspredeleniya primesey v baze dreyfovykh
triodov na ikh ehastoti.we ovoystva)
PERIODICAL: Radiotekhnika i Elektronika, 1957, Vol.II No.101
pp. 1261 - 1370 (USSR).
ABSTRACT: It has been shown by a number of authors (Refs. 1$ 2, 3)
that by changing the concentration of the impurities in the
base region of a transistor, it is possible to increase the
frequency response 037 the useful operating bandwidth of the
device. It appears, however, that no satisfactory treatment
of the frequency characteristics of this type of transistor
(which is known as the drift transistor) has been given. An
attempt is made, therefore, to derive some useful expressions
which would provide the basis for the comparison of the drift
transistors with similar alloy-junction or grown-junction
transistors. xiormally, the distribution of impur~ities in a
drift transistor obeys the error function law, but for the
purpose of analysis, it can be approximated by an exponential
function. The base of a drift transistor is assumed to be in
Oardl/4 the form of a plate having an overall thickness a with the

109-10-5/19
Influence of the Distribution of Impurities in the Base of Drift
Transistors on Their 'Frequency Characteristics.
maximum impurity concentration N a and a minimum concentration
N0 ; a portion b of the plate is etched and the emitter
junction is alloyed to the base at the point where the con-
centration of the iikpurities drops to a value N b (see Fig.2).
The collector junction is alloyed to the opposite side of the
plate and its position during the operation of the transistor
extends from Point 4 (see Fig.2) to Point 3. It is also
assumed that the collector and the emitter are parallel to
each other and that the concentration of the accepl5rs 13 the
collector and emitter region is,of the order of 10 cm7 .
The analysis is based on the standard uni-dimensional diffusion
equation which for the drift transistor is written:
KDp ap PD 2P ap - 1 CP - Pb e-KY
a yo & I- at t
where -the term e-Ky' takes into account the variable concen-
tration of the impurities in the base. Solution of the above
Card 2/4

109-10-5/19
Influence of the Distribution of Impurities in the Base of Drift
Transistors on Their Frequency Characteristics.
.-equation gives an expression for the current amplification
factor 0 of the transistor (see the equation for 0 on
P.1266). It is shown that when the concentration of the
impurities in the base is uniform, the expression for 0 leads
to the standard equation representing the gain of an ordinary
junction transistor. 0 is plotted as a function of frequency
for various values of N IN (see Fig.4); similarly, the cut-off
frequency for 0 is plotted against N b/N1 for N b/Nl ranging
from 1 - 1 000. From the above, it is found that the useful
bandwidth of the drift transistor can be 7 to 10 tires Irger
than that of a corresponding alloy-junction transistor. )OT~ is
also concluded that for "b/N1 < 200, wp/Woo = (NbIN,
where wo and woo are the cut-off frequencies of the drift
andtivnormal transistoiri respectively. Similarly, it is shown
that the relationship between the maximum amplification frequ-
encies of the two types of transistors, f max and f max 0
is expressed by:
Card 3/4

109-10-5/19
Influence of the Distribution of Impurities in the Base of Drift
Transistors on Their Frequency Characteristics.
0-5
fMaX N (5)
fmax 0 2N 0
The author acknowledges the help extended to him by V.I. Baranov
and G. A. Kubetskoy B. D. Tazulakhov, Yu. A. Galuahkin and
L.S. Yermakova. .-- C:-- . .1.1
r
Thare are 4 figures, I table and 14 references, 2 of which are
Slavic.
SUBMITTED: February 28, 1957.
AVAILABLE: Library of Congress
Card 4/4

YNMOV, Ya. A
, I I
Semiconductor electronics. Radio no-11:34-35 N 057. (MIRA 10:10)
(Semicondnetors)

9(4) PHASE I BOOK EXPLOITATION sov/1488
Pol rovodnikovyye pribory i 1kh primeneniye; sbornik statey, vyp. 3
Isemiconductor Devices and Their Application; Collection of Articless
Nr 3) Moscow, Izd-vo "Sovetzkoye radio," 1958. 350 p. No. of copies
printed not given.
Ed. (Title page): Ya.A. Fedotov; Ed.: (inside book): E.M. Volkova;
Tech. Ed.: A.A.-3veshn1koV7.
PURPOSE:. This collection of articles is intended for radio engineers,
students of vuzes and qualified radio amateurs.
COVERAGE: The articles cover the following subjects: semiconductor
materials, physical processes in semiconductor deviceso parameters
and characteristics of semiconductors, manufacture of semiconductor
devices, test equipment and methods, operation of semiconductor de-
vices in amplifier, oscillator and other electronic circuits, various
circuits using semiconductor devices, and radio components for these
circuits. References appear separately after each article.
TABLE OF CONTENTS:
Card 1/ 12

Sem1conductor Devices (Cont.) sov/1488
Tuchkevich, V.M. Some Properties and Applications of Silicon 3
The author compares the properties of silicon crystals with those
of germanium and enumerates the superior qualities of silicon in
semiconductor devices. He discusses the theory of semiconductors
and their practical applications. He also explains several methods
of growing silicon monocrystals. There are no references.
Rusin, F.S., N.Ye. Skvortsova, and Yu.F. Sokolov. Methods of Deter-
mining the Parameters of the Rectifying Contact of Point-Contact
Detectors at Super-high Frequencies 13
The aathors describe several methods of determining the basic
parameters of point-contact detectors. They determine the ma-Xi-
mum permissible shf power from parameters obtained by the above
methods. They describe methods of measuring the impedance Z and,
from its relation to the bias ourrento derive values for Com rd
andT. They also explain a method based on the relation between
the sensitivity (with respect to the voltage Au) and the positive
bias current. There are 4 references, of which 3 are Soviet and
1 English.
Card 2/12

Semiconductor Devices (Cont.)
SOV/1488
Ul&ianov, Yu.I. The Germanium Diode - a Modulator of Infrared Rays 31
The author describes the results of investigations on the modula-
tion of infrared rays by a germanium diode through variation of
the concentration of free electric charges in it. He finds that
the transparency of germanium diodes decreases with an Increase
of direct current passing through the diode. The decrease of
transparency reaches its maximum in the junction region and de-
pends on the quality of the junction. It is independent of cur-
rent frequency change in the range 20 ape - 200 ko. The author
presents data from an investigation of the recombination glow and
photo-emf of the diode at a temperature of 2930 K. A lead-sul-
fite photoresistor was used as a sensor. The author illustrates
the modulation effect using a model of a telephone based on the
application of infrared rays. There are 8 references, of which 5
are Englisho and 3 Soviet,
SamcWvalov, M.M,, and N.A. Spiridonov. Frequency Properties of
Transistors Produced by the Alloy-diffusion Method 47
The author discuss the dependence of cutoff frequency on emit-
ter current in a P-403 type transistor. They also explain the
Jnfluema-of junction capacitances and the resistances of collector
Card 3/12

Semiconductor Devices (Cont.)
SOV/1488
and base circuits on the cutoff frequency. The authoru'thank
Ya.A. Fedotov, Yu.A. Kamemetskiy and Yu.A. Sher for their help.
There are 12 referencesp of which 6 are English, 5 Soviet and
1 German.
Aronov, V.L., and Yu.A. Sher. Frequency Properties of Transistors
With Distributed Parameters 75
.The authors analyze several variant models of transistors with
distributed parameters. They propose a method for investigating
various constructions of triodes and present an equivalent cir-
cuit of a triode with distributed parameters at high frequency.
They also provide numerical examples which illustrate the effect
of frequency on the elements of a T-shaped equivalent circuit.
There are 7 references, of which 5 are English and 2 Soviet.
Madoyan, S.G., and Yu.I. Konev. Some Problems of Using High Power
Transistors 92
The authors discuss some problems connected with the use of
P201-P203 type high-power transistor amplifiers with input vol-
tages higher than the maximum rated voltages in the common emit-
ter circuit. There is I English reference.
Card 4/12

Semiconductor Devices (Cont.) sov/1488
bandura, V.Ye. Universal Instrument for Measuring h-Parameters of
Junction Transistors 96
The author explains the circuit and operation of this instru-
ment. The instrument measures the h-parameters of Junction tran-
sistors working in a common-emitter circuit. The author pro-
vides various examples of measurement. There are no references.
Pershakov, B.N.,and P.A.-Popov.. Instrument for Measuring Alpha
in Junction Transistors 104
The authors explain a d-c method of measuring the current am-
plification factor (a) of a Junction transistor. They describe
the instrument used.for measuring a at low frequencies and the
reverse current of the collector. There are no references.
Kulyas V.I. Developing a.Pulse Forming Unit Equipped With Junction
Transistors for Cathode,-Ray Curve Tracer lio
The author desoxibes the results-obtained In developing the unit.
The unit in used in forming families of charaoteriatice of non-
linear pulses (the step and saw-tooth types). Such a family
should contain 5 to 14 characteristics. This pulse forming unit
was developed, assembled and put Into operation by the radio en-
Card 5/12

Semiconductor Devices (Cont.)
SOV/1488
Kozlov, V.A. Determining the Cutoff Frequericy of 3.1ransistors With
an Oscilloscope 148
The author denoribee in detail an adapter for the IChXh in-
strumentP which makes it possible to measure the cutoff frequen-
cies of transistors. He also describes an apparatus for grading
of transistors with respect to their cutoff frequencies. Both
instruments give direct readings and are suitable for transis-
tors with any value ofafe. This apparatus is based on a method
proposed by V.A. Shohigoll, which applies two simultaneous input
pulses of high and low frequency. There are no references.
Pavlov, V.V. Practical Calculation of Set Noises in Radio Equip-
ment Using Junction Transistors 162
The author explains a praotioal method of calculating the noise
factor of radio equipment using germanium Junction transistors.
He also discusses methods for reducing set noise. There are 4
references, all English.
Ukhin, N.A. Voltage Regulators Using'.Transistors 175
The author describes In detail the operating principle of semi-
conductor voltage regulators. He provides formulas for prheti-
Card 7/ 12

Semiconductor Devices (Cont.) sov/1488
cal calculation and evaluation of basic parameters of the cir-
cuits shown. There are 10 references, of which 0 are English,
3 Soviet and 1 French.
Novit8kiy, P.V., G.N. Novopashennyy, I.A. Zografand Ye.P. Osad-
chyy. Measuring Amplifiers Equipped With Transistors 196
The authors describe methods of designing high-stability meas-
uring amplifiers equipped with transistors. They were developed
in the Laboratoria, fiziko-tekhniche5kikh izmereniy under Profes-
sor Ye.G. Shramkov (LPI). The authors discuss the results of
investigations on the pre-amp and output stages of these ampli-
fiers, cm amplifiers with a high input reai6tancei,and on.:fil-
tere equipped with transistors instead of reactance tubes. There
are 2 references, of which I is Soviet and 1 English.
Konev, YU.I. Semiconductor Amplifiers for Servomechanisms 209
The author discusses several systems of amplifier circuits with
junction transistors used in the most common types of servo-
mechanisms. He explains the design of such an amplifier and in-
dicates its various applications. He thanks B.A. Tonakanov for
his help In developing one of the stages. There are 6 references,
Card 8/ 12

Semiconductor Devices (Cont.) sov/1488
all Soviet (including 1 translation).
Nikolayenko, N.S. Semiconductor Signal Amplifier 227
The author describes the circuit and construction of this am-
plifier and describes the results of tests on several models of
the amplifier under various operating conditions. The apparatus
contains an a-c three-stage directly coupled power amplifier, a
pulse phasing stage, a trigger and an output switching stage.
There is 1 Soviet reference.
Nikolayenko, N.S., and G.V. Kalliopin. An Amplifier With Output
to a Reversible Motor 237
The author describes a transistor amplifier with its output
to an RD-09 type reversible motor and designed for operation
in automatic devices. He discusses the selection of circuits
and operating condItions of the various stages anddescrIbes the re-
su3ts of tests on the anpl=er alm and together with the egiUment. it also
briefly explains the construction of the ampiifier. There is I
English reference.,
Card 9/ 12

Semiconductor Devices (Cont.)
sov/1488
Sevbo, G.S., and L.A. Volkov. Low-rrequency Amplifier With P-4
Type Transistors for Servomechanisms 247
The authors describe a high-power low-fraquency amplifier em-
ployed in servo systems. They also present a practical calcu-
lation of parameters of the output stage. There are 2 refer-
ences, of which 1 is Soviet and 1 English.
Gavra, T.D., and V.I. Biryukov. Frequency Stability of L-F Os-
cillators With Junction Transistors 253
The authors discuss the frequency stability of oscillators
using Junction transistors and explair the changes of transis-
tor parameters caused by temperature changes in the range 200-
600c. They also discuss the possibilities of compensation for
frequency drift in this temperature range. There are 4 refer-
enoeE, of which 2 are Soviet and 2 English.
Abzianidze, K.M. Triggering and Dynamic Characteristics of Tran-
sistorized Triggers 271
The author analyzes the operation of a trigger by Investiga-
ting its dynamic and triggering characteristics. He presents
formulas which make possible the design of triggers for opera-
Card 10/ 12

Semiconductor Devices (Cont.)
sov/1488
tion throughout a wide range of ambient temperatures. An ex-
ample of the design of a trigger is ineluded. There are 5
references, of which 3 ana'Soviet and 2 English.
Garmash, V.P. Frequency Division by Means of Transistorized
Blocking Oscillators 29!i
The author describes the operation of transistorized blocking
oscillators used for frequency division. He makes recommenda-
tions on the calculation and selection of parameters and pro-
vides several practical o1rcuit diagrams. There are 3 refer-
ences, of which 2 are English and 1 Soviet.
Konev, Yu.I. Semioonduotor'ftnotional Pulse Converters 306
The author desoribesan inductively coupled transistor relaxa-
tion oscillator and discuisses its possible applications in auto-
mation. There are no r6forences.
Oliferenko, G.I. TransistorIzed Television Sweep Oscillator 322
The author describes a sweep oscillator comprising three tran-
sistors and one semiconductor diode for feeding an LI-18 pick-
up tube. The circuit contitins a saw-tooth generator and a
Card 11/12

b C!Tv 14 e, - -P-1
9(4) 24(6) PHASE I BOOKAXPLOITATION SOV/1765
Vsesoyuznoye nauohno-tekhnicheskoye obshchestvo radiotekhniki i elek-
troavyazi
.Poluprovodnikovaya e'lektronika (Semiconductor Electronics) Moscow,
Gosenergoizdat, 1959. 222 p. 13,950 copies printed.
Ed-. :
V.I. Shamshur; Tech. Ed.: K.P. Voronin,
PURPOSE: The book is intended for engineering and technical personnel
. working with semiconductor devices.
COVERAGE: The book is a collection of lectures delivered at the All-
Union Seminar on Semiconductor Electronics in March 1957. The
seminar was 'organized by the Scientific and Technical Society of
.Radio Engineering and Electrical Communications imeni A.S. Popov.
The authors of the lectures have attempted to systematize the basic
information on the operation of semiconductor devices. The articles
describe the operation and characteristics,-of crystal diodes and
transistors and discuso their application in various low-frequency,
high-frequency and puDie circuits. No personalities are mentioned.
References appear at the end of each article.
Card 1/7

'vemiconductor Electronics
TABLE OF CONTENTS:
Foreword
SOV/1765
3
Ye.I. Gallperin. Basic Physical Concepts 5
The author discusses the physical aspects of semiconductor ma-
terials. He describes the atomic structure of the various ele-
ments and presents a discussion of energy levels in metals*and
dielectrics. There are 13 Soviet references (including 4 trans-
lations). I
N.A. Penin. Electrical Properties of Semiconductors 25
The author gives a brief description of semiconductors, such
as seleniwa, tellurium., and germanium. Particular attention is
paid to the atomic structure of germanium crystals and to con-
duotion in crystals with and without impurities.
N.Ye. Skvortsova. Semiconductor Crystal Diodes 32
The author discusses the construction and operation of point-
contact and junction-type crystal diodes. She also presents
methods of making rectifying contacts and describes the effect
Card 2/7

Semiconductor Electronic;B
SOV/1765
of temperature on diode operation. There are 2 Soviet references
(including 1 translation).
Ya.A. Fedotov. Triode Transistors 42
TFe- author briefly di;30UBBes the theory of junction-type and
point-contact transistors. Chief attention is given to the
theoretical and operational aspects of junction-type transistors.
The author discusses -the characteristic3 of junction-type triode
transistors and describes the effect of frequency on transistor
parameters. He also describes transistor power amplification and
discusses methods of obtaining high operating frequencies. A
brief description of junction-type tetrode transistors is also
presented. There are 7 Soviet references (Including 5 transla-
tions).
Ye.I. Gallperin. Triode Transistor as an Amplification Circuit
Element 87
The author discusses 'the constructionj operation and applica-
tion of triode transistors. He describes various methods of
transistor connection and gives expressions for equivalent cir-
cuits and transistor parameters. There are 6 Soviet references
Card 3/7

Semiconductor Electronics
(including I translation).
SOV/1765
V.I. Gevorkyan. Stabilization of Power Supply Circuits of Triode
Transistor Amplifiers 105
The author discusses methods of stabilizing the operation of
bias circuits and describes an analytical method of calcula-
ting transistor perfo:nnance. He also presents a graphical
method of determining the quiescent point and discusses tran-
sistor circuits with automatic bias. There are no references.
A.G. Fillipov. Direot-coupled Amplifiers 117
The author describes the operation of d-c transistor amplifiers
and discusses their operating characteristics. He also describes
methods of stabilizing transistor operation by using negative
feedback, balanced and bridge circuits. There are 10 references
of which 1 is Soviet and 9 English.
Yu.I. Konev. Triode Transistors in Amplification Circuits of Servo-
mechanism Systems 132
The author discusses 'the application and operation of transis.-
tors in servomechanism circuits. Emphasis is placed on a dis-
Card 4/7

Semiconductor Electronics
SOV/1765
cussion of servomechanism transistor components, such as a-c
amplifiers, modulators, and phase-spneitive amplifiers. There
are 7 references of which 6 are Sovi, et (Including 1 transla-
tion), and 1 English.
A.A. halikovskiy-High-frequency Transistor Amplifiers 151
The author discusses equivalent circuits of high-frequency
transistor amplifiers and describes methods of calculatIng
their parameters. He describes the operation of Interstage
resonant circuits and examines the effect of feedback In tran-
sistor circuits. He also discusses transistor stability, sta-
bilizing networks for the internal feedback in transistor' cir-
cuits and the noise factor. There are 15 references of which 3
are Soviet, 1 German and 11 English.
I
is
T.M. Agakhanyan. Transient and Frequency-Fhase Charactqriatics of
a Junction-type Triode Transistor 173
The author discusses traisient, frequency and phase character-
istics of junction-type triode transistors. He also derives
expressions for transfer functions for various types of tran-
sistor connections and describes the equivalent circuit for high
Card 5/7

Semiconductor Electronic:3
SOV/1765
frequencies for a junation-type triode transistor. There are 8
references of which 2 are Soviet (including I translation), and
6 English.
T.M. Agakhanyan. Triode Transistor VideoAmplifiers 187
The'author discusses 'linear and nonlinear distortions in tran-
sistor video amplifiers and describes circuits with complex
feedback and current distributing networks. A brief discus-
sion of multistage amplifierE is also presented. There are, 2
references, both Soviet.
B.N. Kongnov. Trigger and Relaxation Circuita Using Junetion-type
Triode Transistors 197
The author describes the operation and characteristics of sym-
metrical triggers and multivibrators-uning junction-type tran-
sistors. He also discusses their stability and derives expres-
sions for calculating transistor bircuit performance. There are
4 references of which 3 are Soviet and 1 English.
G.S. Tsykin. Transistor Inverter of D-C Voltages 208
The author discusses the operation and characteristics of in-
card 6/7

Semiconductor Electronics
SOV/1765
verter circuits using transistors. -.Special attention is'given
to the operation and design of inve *rter circuits with a signal
generator. There are no references.
B.N. Kononov. Voltage Stabilizers Using Semiconductor Devices 215
The author discusses voltage stabilizing circuits using sili-
con crystal diodes and transistors. He also explains equations
for series and feedback stabilization and discusses transistor
stabilizing circuits with temperature compensation. There are
4 references of which I is Soviet and 3 English.
AVAILABLE: Library of Congress
iplofm
5-26-59
Card 7/1

AUTHOR: Fedotov, Ya.A. sov/log-4-4-18/24
TITLE: Investigatl'o'no 'Certain Characteristics of the Drift
Transistors with a Wide Collector Junction (Isslodovaniye
nekotorykh avoystv dreyfovykh triodov s shirokim kollektornym
perekhodom)
PERIODICAL: Radiotelchnika. i olektronika, 1959, Vol 4, Nr 4,
pp 710 - 717 (USSR)
ABST11ACT: The base region of the investigated transistors was
obtained by the diffusion of antimony into germanium. The
impurity distribution could be sufficiently accurately
approximated by the exponential law. First, the current
amplification factor a was investigated. The curves of
a as a function of frequency are shown in Figures 1 and 21
for various values of the emitter current. The curves of
Figure 1 were taken at the collector voltage of 30 V, while
those of Figure '2 were taken at a voltage of lo V. Figure 3
shows the cut-off' frequency, f a 1 as a function of the
collector voltage u k for various transistor samples;
C,rdl/3 these curves werc! taken at the emitter current of 0.6 mA.

sov/log-4-4-i8/24
Investigation of Certain Characteristics of the Drift Transistors
with a Wide Collector Junction
Also, it was found that at u,, of the order of 20 V, the
collector capacitance was of the order of 0.5 to 1.0 pFj
at collector voltages of the order of 5 V, the capacitance
increased to about 10 pF and at voltages of 1 V, it was
about 20 pF. The total!base resistance of the transistor
-was measured as a function of frequency and the collector
voltage. The results arc shown in Figures 4 and 5 for two
different transistors. The base resistance in the figures
is plotted against frequency with the collector voltage as
a parameter. The transistors were also investigated in
resonant amRllflers. The results aru -illustrated in
Fi&ure 7, where the maximum available amplification is
plotted as a function of frequency. The results are in good
agreement with the Pritchard formulae (Refs 7,8).
Card2/3

Investigation of Certain Characteristics opqdPwl?~'Oiz &Istors
with a Wide Collector Junction
There are 7 figuros, I table and 12 references, 11 of
which are English and 1 Soviet.
SUBMITTED: September 26, 1957
Card 3/3

KOBZgV, V.V.; SHISHMA OV, V.N., FXDOTOV Ye.A., kand.tekhn.nauk, red.;
0 '--
LARIONOV, G.Ya., teb:hn.red.
(Tranoistorized radio receiver il'tages] Kaskedy rediopriemnikov
na tranzistorakh. bloskva, Goo.onerg.izd-vo, 1960. 271 p.
(KIRA 13:12)
(Transistor circuits) (Transistor radios)

MOTOV, Ya A otv,red.; BARKANOV, N.A., red.; BERGKLISCN, I.G., red.;
A.M., red.; WiLIFERIN, Te.I., red.; KAMERTSKIY, Yu.A.,
red.; KAUSOV, S.F., rad.; KON3V, Tu.I., red.; KRASILOV, A.V.,
red.; XULIKOVSKIY, A.A., red.; HIKOLAYICVSXIY, I.F., red.;
STAPANIUMO. I.P., red,,; VOLKOVA, I.M.. red.; SHUROV, B.V..
tekhn.red.
[Semiconductor devicso and their applications] Poluprovodni-
kovye pribory i ikh primenenie; abornik statel. Koskva, Izd-vo
OSovetskoe radioO. No.6. 1960. 333 P. (KLU 13:12)
(Semiconductors) (Transistors)

QL,ja.A., otv.red "G&OPLUN, Te.I., zamestitell otv.red.; BARKANOT,
N.A., red.: BHRG]kL'S)N, I.G.. red.; BROTDH, A.M., red.; KAW1,22-TSKIT.
TV.A., red.; KAUSOY. S.7., red.; KRASILOV. A.T., red.; KUIKOVSKrT,
A.A., red.; NIKOLATIVSKIT, I.F.. red.; PSHIN, N.A., red.; b"MA-
HMO, I.P., red.; VOLKOVA, I.M., red.; SVESHNIKOV, A.A., takhn.red.
[Transistor devices and their applications; colloction of articles]
Poluprovodnikovye pribory i ikh primanenis; abornik statei. Moskva.
Izd-vo "Sovetskoe radio." No,4. 1960. 423 p. (MIRA 13:3)
(Transistor@) (Blectronic circuits)

PHASE I BOOK EXPLOITATION SOV/4817
Fedotov, Yakov Andreyevich and Yuriy Vasillyevich Shmartsev
Tranzistory (Transistors) Moscowp Izd-vo "Sovetskoye radio," 1960. 429 p. No.
of copies printed not given.
Ed.s N.Ya. Arenberg; Tech. Ed.: B.V. Smurov.
PURPOSE: This book is intended for students of advanced couraes at radio-engineer-
ing departments of schools of higher education and for engineers concerned with
developing and designing transistorized circuits.
COVERAGE: The authors discuss basic physical processes connected with transistors)
analyze problems of semiconductor conductivity, and describe the technology of
semiconductor materials such as germanium and silicon. Consideration is given
to the measurement of semiconductor parameters which are important in the man-
ufacturing processes of semiconductor devices. The book contains detailed in-
fG-mation relating to contact phenomena in semiconductors, principles of Pimi-
conductor-device operation in radio-engineering equipment, and the relationships
between basic parameters of a device with physical magnitudes determining the
electronic processes in the device. The book includes discussions on equiva-
lent transistor circulto operated at low and high frequency. The dependence of
C.M6~

Transistors
SOV/4817
the parameters of the transistors on frequency is evaluated and methods of
measuring these parameters at low and high frequencies are analyzed. The
technology of manufacturing various types of transistors is described. Para-
meters of Soviet and non-Soviet semiconductor devices are listed in tabular
form. Chapters II and IlIp and Sections 1 and 2 of Chapter VIII were written
by Yu.V. Shmartsev. Ya.A. Fedotov wrote the remaining chapters. The authors
thank A.A. Kulikovskiy, Docent, Candidate of Technical Sciences,;or his help
in editing the book. References accompany each chapter.
TABLE OF CONTENTS:
Ch. I. Fields of Application and Prospects for Development of Semiconductor
Devices
1. History of the development of semiconductor techniques 5
2. Prospects for the technical application of transistors 10
Ch. II. Conductivity of Semicon-luctors 19
1. Classification of solids according to their conductivity 19
2. Semiconductors 31
3. Model of valence bonds 33
4. Effect of impurities on semiconductor conductivity 37
CIWA-24.

- FEDQTPV!__j! A. red,,- VOLKOVA., I.M... red.; SWROV, B.V-, B.V., tekhn. red.
t~
(Semiconductor devicen and their application; collected articleal
Poluproyodnikovye pribory i ikh primenenial Bbornik otatei. No-
okya, Izd-vo "Soystokoe radio," No.7* 1961* 358 P. (-M-TRA-14,10)
(Transistors) (Semiconductore)

FEDOTCVp Ya,, kand,tekhnnauk
Physioal prinoiplee of the operation of semioonduotor devioes,
Radio no.406-39 AV 162. (KUU 15W
(Sesiconduotors) (Transistors)

FEDOTOV, Ya,, kand,tekhn.naul:
Physical principles of the operation of semiconductor devices.
Radio no.5333-37 Ify 162. (KRJk 15: 5)
(Transistors)

FEDOTOV, Ya.A., otv. red.; BEIGELISOllp I.G.,, red.; GALIFE.-Ill, Te.l..'
, otv. red.; RAIMrETSKIY, Yu.A.p red.; KAUSCV, S.F., red.;
KOITEV, Yu.I.., red.; WSILOV, A.V., red.; XULIKOVSKIY, A.A.,
red.; NIKOLAYEVSKIY, I.F., red.; STEPANMIKO, I.P., red.;
VOLKOVAj I.M., red.; BELYAYEVA, V.V.j tekhn. red.
(Semiconductor devices and their applicationslPoluprovodnikove
pribory i ikh primenenie; sbornik statei. Pod red. IA.A.Fe-
datow.. Moskva.. Izd-w "Sovetakoe radio." flo.8. 1962. 332 p.
WIRA 15:10)
(Transintors)

FEDOTOV, yS,, L kVd. tekhn, flauk
Transistor devices vkth many applications, Radio n~,12138-43 D 162,
(Transistors) (MIRL 1613)

FEDOTOV Takov Andreyevich, kand. teklin. nauk; IVANOV, S., red.;
red.
(Towards microolectronic-,n] Na puti k mikroelektronike.
Moskva# Isd-yo "Znarle," 1963. 45 p. (Yovoe v shizni,
nauke, tekknike. IV Seriia: Tekhnika, no.7) (MIRA, 16:4)
(Miniature clectronio equipment)

DO Yakov 4dreyevich, dote., kand. tekhn. nauk; VOLKOVA, I.M. v
4'rl
-E'~~re4. 1 =ELZ
- ya~v YEVA, V.V., tekhn. red.
[Physical principles of semiconductor devices] Oenovy fiziki
poluprovodnikovykh priborov. Moskva, Sovetakoe radio, 1963.
653 P. (Semiconductors) (Transistors) (MRA 16:7)

16
-n?Ha-v-Y-A-
Reply to M.Andronov's letter. Radio no.100-51 Ja 163.
(KERA 1631)
(Transistors--Standards)

BDOTOV,-Ya-A,, red.; VOLKOVA, I.M., red.; BELYAYEVA, V.Vp.-
tekhn. red.
(Transistor devioss and their applicational Polupro, dniko-
vye pribory I ikh primenenie; aborixik statei. Pod i.
IA.A.Fedotova. Mos).va, Sovetakoe radio. No.9. 1963. 269 p.
(MIRA 160)
(Transintors)

FEDOTOV, Ya.A., red.; VOLKOVA, I.M.9 red.
-.1 ........I ~,
(Transistor devices and their application; a collection of
articles] Poluprovodnikovye pribory i ikh primenenie; 61bur-
nik statei. Moskvaj Izd-vo, "Sovetskoe radio." Ro.11. 1964.
296 p. (MIRA 17:7)

SFlRIDONOV, NJkolay Spiridona-vich; MtTOGRADOV, Vladimir Ivanovich;
KA141,21ETSKJY, Yu.A., kanu. telkhn. nauk, retsenzent;
FEXTOV, Ya.A.1-retoenzent; VOLY.OVA, I.M., rod.
(Drift transistors] Drelfovye tranzistory. Moskva, Sovet-
skoe radioy 1964- 304 p. (MIFA 27.10)

FEDOTOV Ya.A., red.; VOLKOVA, I.M.) red.
-~- P I.--
(Semiconductor devlcea and their applications) Polu-
provodrilkavye pribory i ikh primenenie; sbornik statei.
Moskvap Sovetskas radlo. Nu.12. 1964. 263 p.
(MIRA 17:12)

FEDOTOV, Ya.A.., otv. red.; VOLKOVA, I.M., red.
(Semiconductor devlcos and their applications] Folu-
provodnlkovye pribory I lkh primenenlei 3bornik statei.
Moskva2 Sovetskoe radlo. No.12. 1964. 203 p.
(,! 1HA is " 1 )

ed.,j--. rev -and,-en14-or, 0
r
9().- 001
i _ze
or--dev-
PN-TAM- samiconduct 41 ner-diode.-transistor, electric
TO _pr9
semit:onductiiity, pn-junotion,, 41ectronic circuit
~4
PURPOSE AND COVEMOSt This_=no;;raph examiRes physical processes in semiconductor
Idevi~;es which determine their pwrnmeters and chaencteristics, peculiarities of
circait application, stability o.: parameters of somicondustor devices, and V eir
reliabilitye.A short, description of the prInciple olectrophynical properties or
1semiconductoi, materiAls-is -givewialong with-basic- information about the constr=tion--,--.-
and technololor of semiconductor-devices and perspectives for the development of
----i-semiconductoj*-teahnology& The W*-is intended-for students of higher -learning, -
iw use eniconductor devices.:'

-----------
CCES310N NR kM5OO5929
A TABU'OF CONTUTS (abridged),
I From the authDr --:3
OrY -Of the d 1'
6-
Introduction.~ A -hist dyel nt
OPMO 6f semiconductor technology
Ch. I. Electrophysical propeeti6g of demic
onductora 13
Ch. 11. Conta
ct phenomena in semiconductors 65
Ch. 1116 PN Junction - 93
III - Power supply diodes.-Zener diodes; pulse diodes
Ch. V~, Special diodes 16L
PO transistors -- 200
Ch* V.I.' Junction and int-contoot
aristio&-or-the operation of transistors in circuits
Ch. V11. Basic.oharact 270
Ch. V111. Equivalent circuits and iow-frequency trpnsistor parameters. Methods of
measuring pnrometers -- 338
Ch. IN. Dependence of Junction trlode parameters on frequency - 376
Ch. X. Operation of high-frequenqf'junction transistors - 410
Ch. K. 4ethola of increasing operational frequencies. High-frequency
transistors - h4l
Ch* r1o 497
Ch. XXII, Tea hnology and construction of semiconductor devices 527
:Card

_,FE--DO-T.O-V.,-Ya ARand* tekhn. nauk, otv. red.
(semiconductor devicei3l torminology] Poluproyodnikovye
pribory; terminologila. Moskva, Nauka, 1965. 49 p.
(Sborniki rekomenduerqrkh terminov, no.691 (FURA 18:8)
I. Akademiya nauk -13,05S11. Komitet nauchno-tekhnicheskoy
terminolog-A,

GWNISMAN, G.V., insh.; IrXDOTOV, Ta.V. , inzh.
Stability of polymetal rods. Sudestreenis 25 no.4:13-15 AP '59-
(11a;tic reds and wires) (KIRA 12:6)
1 -:'. --LLLt:~-~-' I

13EL-YAYEV, L.N.., kand. tekhn.
NEWIREV,
-;
nauk, nauchn. red.
[Use of plastics for waterproofing buildings) Primenenie
pInsticheskikh mass dlia gidroizollatail zdanil. Lenin-
grad, Strolizdat, 1965. 175 (MIRA 18:7)
F77~

,F
'ROVA, R.I.p dctB., red.;
pA; GUML
KUSURGASHEVO I.M.p red.
[Seasonal freezing of the soil In the Tatar A.S.S.H. and
adjacent areas In the middle Vo!ga Valleyl Sezonnoe pro-
merzanie pochvy v latarskol ASSR I I7;mezhnykh ablastiakh
Srednego Povolzblia. Kazan', Izd-vo Kazanskogo univ.v 1965.
198 P. (MIRA 18312)