SCIENTIFIC ABSTRACT GALKIN, B.I. - GALKIN, I.

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• Collection: Scientific Abstracts
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• Release Decision: RIF
• Original Classification: S
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• Document Creation Date: November 2, 2016
• Document Release Date: July 19, 2001
• Sequence Number: 1
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

071,
GALKIN/-4r. Cand Geolog-Mineralog Sci
Dissertatlon: "Analysis of Varinbility of Hinoralo Propertlen and
its Application to Solution of Certain ProspectIng Problems." All-
Union Set Res Inst of Mineral Paw Materials. 2q Jan 47
SO: Vechernyaya Moskva Jan 47 (Proj #17816)

.11 --p
GALKIN, 11. 1.
Galkin, B. L - "On the method of revealing quantitative interrelationships airong
the components of useful minerals", Trudy Vsesoyuz. nauch.-Issled. In-ta mineral.
Syr lye, Novaya seriya, Issue 1, 1949, p. 22-31.
SO: U-4631, 16 Sert. 53, (Letopis Inykh Statey, No. 24, 1949).

,GALKINq B.Ij. BIRYUKOVY V.I.; KREYTER, V.M.; KULICHIKHIN, S.N.;
MAMA, Ye.V.; POMERANTSEV, V.V.; RUSETSKAYA, G.G.;
YARMOLOVICH, N.V.; MAKEYEV, V.I., red. izd-va; TJYKOVA,
V.V.,, tekhn. red.
[Prospecting for stockwork deposits of nonferrous and rare
metal ores] PA2vedka shtokverkovykh meatoroOdenli tsvquykh i
redRikh metallov. (By] B.I.Galkin i dr. Moskva, Goageoltekh-
izdat, 1962. 233 P. (MIRA 16:6)
1. Moscow. Vsesoyuznyy nauchno-iseledovatellskiy institut mine--
rallnogo syrlya.
(Prospecting)

qALKIN,_ B.I..; GRIGORIYEV, V.M.; KALIK, A.M.; KARPOV, L.N.; Ln. IYE,
A.M.; MOMDZBI, G.S.; %:lPJiOV, I.A.; IWZHAIIGVSKIY, V.A.,
red.izd-va; PINIKOVA) S.A., tekhn. red.
[MetWs of testing iron ore deposits for germanium and
other disseminated elements and the calculation of their
resources] Metodika oprobovaniia zhelezorudnykh mesto-
rozhdenii na germanii i drugie rasseiannye elementy i
pododheta ikh zapasov. [By] B.I.Galkin i dr. Moskvap Gos-
geoltekhizdat, 1963. 58 P. (MIRA 17:2)

LIFSHITS, M.I.; GALKIN. B.Ye.
The C-1 automatic photoelectric pyrometer. Biul.tekh.-ekon.
inform. no.1:9-10 159. (MIRA 3.2:2)
(Photoelectric measurementO (Pyrometers)

in I tioi:;. ~'-..rt 5:
--ctit'll of nit.-Au, J."
nodj.:Ij,'.~"-454 f6i.
(Cc'..Iplax cov.~(171-11 '~S)
(Aiaines)

HO)BRAI-~fENSKIY, Leon,d Nikclayevich.; AL",;KSANIUH,
GA:LKIN, Boris Yevurafo,.rich; FLIS~ 111ya Yev-,eyeviCh
'-[d*6-Cdis'6dj--" MrOHC'MNK6, ki,P.r, red,
:1
[ElectromeLrie control. method in the woodpulp and paper
indus-rryl Elskirome-tricheskle met,--iy kontrolia tse1IivI-izn--
bumazhnogo proizvodstva. 'Moskva, Lesnaia prorrvsh!eiuiof3t.',
1965. 255 p. (1, .'1 R A .18.! ' " ",

GALKIN David Isayevich- KONONOVICII, Lev Mironovich; KOROLIKOV, Vadim
~IMINOV,A.I., red.; LARIONOV, G.Ye., tekhn. red.
(Ctereoplionic broadcasting and sound recording] Steraofonichaskoe,
radiovenhohanie i zvukozapial. Moskvap Gosenergoizdat, 1962. 126 p.
(Massovaia radiobiblioteka, no.436) (MIRA 15:6)
(Radiobroadcasting) (Acoustical engineering)
(ma~etic recorders and recording)

I'
6, 5000
7 -1"; 3 3
:30V/1 -'o-CA-1-26122
AUTHGRS: G, a 1 k I n.) D. P., PratusewlLch, A. Ye.
TITLE: Performance of' Poli ing Mill on SIL-J-111ri, Si-~-Tace Bearings

PERIODICAL:
1950, Nr 1, PP -"'-39 (USSR)
0 1 0
Metallurg
,
A BS TRA C T The wear and frequent breaI,,di--,qns Of ro].1 jcurllals
of sheet metal hot rolling m-411, gave reasons for chang-inE
the bearings of roi2s of st--ands f~ron,
four-row tapered r-cller bearings 'T-5KB--"4~~' zo x
_1 j L
-,e dlameter, of tapered
mm s liding- surf a.-,e bear-.-ngs. 'I"i. kl I
Journal was chang,-2J Crom ~~120, to 7110 mil-n t,hie critlcal
section). ThIs Ir,.~ 'Oendin?~ Sr-,:,eng~-h -:::.5 time34
The bearinp-,s wor;r -r !7,ft', "Ir-Ight stock)
suo In z3uite o'
. plied uridev JI I
the general qua2tty -,-f e ,neeL
metal was not satisraztory due t--c- vjarpi~ig and buck-lin'g.
Dur'Lng further lriveo~tji~rat it wlju-, uot,A',~I lst,,ed 1, h~~7j~
Cavd 1-11/2 the cause of the deCeCtO Wa:3 'M~- inc-e~is;~J ~,vear-of' ti,.e

Perf ormance of Rolling Mill on Sliding Surface 77 43 31
Bearin,3s SO %rI/l 30 - 6 3 - I - 106 /22'
ASSOCIATION,
roll barrel, which occurl-ed 1-:e~cv,I:;e of' heating of t1re
barrel ends adjaoent to the WICI I-_t beari?-rs.
The thermal wear of uhe ro-1-10 -e;:P-lited -In a concave
surface of the barrel. To de3rease the xac- '.,nt of'
roll changes and tc inpr(:),-re the quality of the sheet,
the following improvements were vntade: application ot'
a special collector for coo.I.Ang the en,11s (200 am 'Leri,-th,
of the backing roll barrel; (2.) ii~rindlng 0,-3 irm camber for
uppe~r backing roll and 0.2 mm camber fcr lower (work)
roIl. The use of sliding-surface bearing decreases -Ins
g I
number of breakdowns arid the axial load cri the wori,:ii-
--Is and Improves the qual.1ty of roi~z?--,
r
,cl L L
Ma.cr nit --gors k Me 41,- al lu -r,4g i c a I C'nri't) i ne ( M-~i.~~ n '_ tJ-,_- -~ rS k, IITer,
lurgicheskly komb-Inat)
Card 2/2

GALKIN, D.P.; PRATUSEVICH. A.Te.
Operation of a three-zone beating furnace. Metallurg 5
no.9:24-26 s l6o. (KIRA 13:8)
1. LimtoproimtMy teekh lo.1 *gnitogorskop metallurgicheakogo
kombinsts.
0krusces, Heating)

GALKIN, D.Ye.
Potentiometric determination of sulfur in coals. Trudy TGU
145:67-68 '57. (FIRA 12:3)
l.Kafedra analiticheskey khimii Tomskogo gosudaretvennoge universitets
imeni V.V. Kuybywhevs.
(Sulf"r-Analyvis) (Goal-Analysis)
(potentiometric analysis)

GALKIN, D.Ye.
rotentiometric determination of water-soluble sulfates.
Trudy TGV 145;69-7z '57. kMIRA 12:3)
l.Kafedra analitichookoy khimii Tomkogo goeudaretyannoge uni-
versiteta imeni V.V. Kuybyshev&.
tSulfates) kPbtantionetric malysts)

GALKIN, D.Ye.
Electrometric method for determining sulfate ions. Trudy TGU
145:163-172 157. (MIRA 120)
(Sulfates) (Potentiometric analysis)

~',ALFTNI n.Tc., Cand Chem ~Ici - (dis:-)
for detecf-ing stilfit,p ion.S." Forsk,
("in of Mrher tdlic.::ition ',Ts
)SR. ro:!,.r,' i1niv im V."!. Fulybylihev)
100 conies (KL, ?7-~~, 100
- 35 -

SOVI/ I 37-58-10-Z 1818
Translation from-. Referativnyy zhurnal, Metallurgiya, 1958, NY 10, p 194 (USSR)
AUTHOR: Galkin, D. Ye.
TITLE: Electromechanical Method for the Determination of Sulfate Ions
in tile Electrolytes of Nickel --plating Baths (Elektromekhani-
cheskiy metod opredeleniya sullfat--ionol.- v elektrolitakh
nikelevykh gal'vanicheskikh varin)
PERIODICAL- Dokl. 7-y NaLlchn. konferentsii., posvyashch. 40--letiyu
Velikoy Oktyabrlsk. sots. revolyutsii. Nr 2. Tomsk, Tomskiy
un-t, 1957, pp 177--178
ABSTRACT: For the determ'ination of S042 - contained in the electrolytes
(E) of Ni plating baths the author proposes to use the noncom-
pensating electrometric method of titration employing a Pt-Ag
pair of electrodes and a ferri-ferrocVanide indicator electrode.
The variation in the emf of the galvanic cell in the process of
titration is registered with the aid of a galvanometer with a
sensiti-vity of _10 6amp. For the analysis E :s transferred
into a volumetric flask and diluted 25 -- W times with water.
25 - 30 cc of the solution are taken for each titrat"on and
Card 1/2 added thereto are 5 - 7 cc of 0. 1 -M 5olution of K Fef'SCN),'-
3

SOV/137-58-10-21818
Electromechanical Method for the Determination of Sulfate Ions (cont. )
0. 1 cc of 0. 005-M solution of K4Fe(CN )6 and 25 - 30 cc of 960/o alcohol. The
Pt-Ag electrodes connected to the galvanometer through a 30, 000-ohm resis-
tance are placed into the titration vessel. The titration is carried out with a
0. IN solution of Pb(N03), which is standardized by the same method with
Na,SO 4* The point of equivalence is determined by the first deviation of the
hand of the galvanometer or by the titration curve. Tile maximuni error of
the method compared to the gravimetric method is < 10/6; upon the standard-
ization on the F, it is 0. 50/0.
V. N.
1. Sulfate ions--Determination 2. Electrolytes--Analysis 3. Titration
Card 2/2

GAL,Ua`) D.Ya.; RCIZA.'-,'OVII, L.N.; PBULYLVA, 11-.,B.; AU;K3ArO)RcjV-,. L.Y.
.juick and simple electrometric method of determining t~-e
sul-fate salinization of soils. Pochvovedenie no.2:97-100
F 160. (MIU 15:7)
1. Tomskiy gosudarstvonnyy universitet.
(Saline and alkali soils)
(Soils-Analysis)

GALK -X&,wf-,kand.tekhn.nauk-; IVANOV, M.11.0 starshiy inzli.
Rapid evolution of square roots br electronic calculating machines.
Izv. vy-s. uchob.-av.; prib. no.2:44-51 '58. (MM 11:7)
l.Leningradakiy inGtitut tochnoy mekhaniki i optiki.
(Electronic digital computors) (Sauare root)

?8(1,2) SO'V/146-59-2-14/23
AUTTIORS: Galkin, F.Ya., Docent, and Ivanov, M.N., Engineer
'TITLE: Eliminations of Correcting Additions at the Extrac-
tion of Square Root in Binary Computing System
PERIODICAL: Izvestiya vysshikh uchebnykh zavedeniy - priborostroy-
eniye, 1959, Nr 2, pp 83-91 (USSR)
ABSTRACT: The process of arithmetical extraction of the square
root in a binary computing system resembles in many
ways the process of division. Both processes go from
higher to lower orders. In both cases, the subtra-
hend value contained in the counter is subtracted
from the next remainder. In both cases, the next
digit of the result is noted; if the remainder is
positive - the digit is 11111, if negative - it is 11011~
In both proce8seso the positive remainder is shifted
after each substraction by one order to the left, or
the following subtrahend is shifted by one order to
the right, that is, the subtrahend is decreased two
times in respect to the minuend. If the remainder
Card 1/2 is negative, correcting addition is performed before

SOV/146-59-2-14/23
Elimination of Correcting Additions at the Extraction of Squake
Root in Binary Computing System
the shift. Having done the necessary research, the
author deduces how to extract the square root with-
out recurring to correcting additions: "In the case
where the remainders are positive, the next digit
of the root 11111 is noted,"0111 is added to the deter-
mined value of the root, and the shift and subtrac-
tion are performed. If the remainders are negative,
the next digit of the root 11011 is noted, '111" is
added to the determined root value, and the shift
and addition are made". For extraction of square
root without correcting additions, a layout shown in
Fig 1 is applied. Recommended by the Kafedra schetno-
reshayushchikh priborov (Chair of Computing-Solving
Devices). There are 3 tables, 2 diagrams and 1 Sov-
iet reference.
A330CIATION: Leningradskiy institut tochnoy mekhaniki i optiki
(Leningrad Institutey6f Precision Mechanics and Optics)
SUBMITTED: March 10, 1959
Card 2/2 1-1~

67470
-2f~ 16- 6 goo SOV/146-2-4-12/19
AUTHOR: didate of Technical Sciences, Do-
Can
cent, lvanov, M.N., Engineer
TITLE: Decimal Translator Circuits (Decades)
1~h_
PERIODICAL: Izvestiya vysshikh uchebnykh zavedeniy. Priborostroye-
niye, 1959, Nr 4, pp 91-96 (USSR)
ABSTRACT: Decimal translators or decades are widely used as
pulse counters. Such a decade circuit (Figure 1) was
already described in a previous article /-Reference
1 7. At the Laboratory of the Leningrad-Institute
ol Precision Mechanics and Optics, -the authors of
the Dresent article developed and -tested two new im-
proved decade circuits (Figures 2 and 3) with capa-
citative coupling whose design and performance are
described in detail. The principal advantage of
these instruments is that they can be connected UP
Card 112 with any triggers, without additional calculations

67470
SOV/146-2-4-12/19
Decimal Translator Circuits (Decades)
or investigations, and are very reliable and quick-
acting. This article was recommended by the Kafedra
schetno-reshayushchikh priborov i ustroystv (The
Chair of Computing and Counter Instruments and De-
vices). There are 3 diagrams and 1 Soviet reference.
ASSOCIATION: Leningradskiy institut tochnoy mekhaniki i optiki
(The Lenin~rad Institute of Precision Mechanics
--A r%--1-4 - -
SUBMITTED: June 26, 1959
Card 212

L. 2952-66 FWT(d)/E ED-2/Ee(l) IJP(c) GG/13B
ACCESSION NR: AP5021441 6ij0146/65/008/004/0067/0070
510.5
'AUTHOR.-- Ga
Ikin F. Ya.
,TITLE: Rounding off decimal fractions on binary digital computers
,SOURCE: IVUZ. Priborostroyeniye, v. 8,.no.4, 1965, 67-70
,:TOPIC TAGS: digital computer, computer theory
'ABSTRACT: An extremely simple method is proposed for rounding off decimal fractionq'
.on digital computers which operate in the binary system of notation. The conclu-
.sions are confirmed by specific examples. Some constants used for rounding off are
igiven.
!ASSOCIATION: Leningradtskiy institut tochnoy mekhaniki i optiki (Leningrad Institute
!of Precision Mechanics and Ovtics)
~SUBMITTED: loFeb64 ENCb:* 00 SUB CODE: DP'
~NO REr sov: on OTHER: 000

TIP
AU- NKI AP6002,174. SOURCE CODE- UR/13146/651008/00610073/0076
3
AUTHOR: Galkin F. Ya.
ORG: Leningi~ad Institute of Fine Mechanics arid Optics (Leningradskiy institut
tochnoy Mekhaniki i optiki)
TITLE: Arithmetic potentialities of the "Z out of 5" code
SOURCE: IVUZ. Priborostroyeniye, v. 8, no. 6, 1965, 73-76
TOPIC TAGS: error detecting code, 'binary code
ABSTRACT: The formation is considex-ed of "circular" coding systems ~vhich:* can, be,
1- " - mask
obtained from the "2 outof 5"'c~='b'y1means of successive shifts.- A code
fastened to a decimal count wheel and moving against five brushes may realized the,
shifts. This method yields 100 practical "Z out of 5" systems out of 101 theoretically?
possible. Any system can be realized either by a count wheel or by an electronic
device. A register is possible which would permit counting by the shifting technique
directly in the "Z out of 51' code. Hence, all 4 arithmetic operations are possible in
the "Z out of 511 code, without conversions. Orig. art. has: I table.
SUB CODE: 12, 09 SUBM DATE: 07Jul64 ORIG REF: 003 OTH REF: 002
Card 681.177

GALKIN, G.A.; KISELEV, A.V.; LYGIN, V.I.
Infrared spectrum of benzene adsorbed on a silica Burface. Zhur.
fiz.khim. 36 no.8:1764-1768 Ag 162. (MA 15:8)
1. Institut fizieheskoy khimii AN SSER i Moskovskiy gosudarstvennyy
universitet imeni Lomonosova, khimicheskiy fakulltet.
(Benzene-Spectra) (Silica)

GALKIN, G.A.; KISELET, A.V.~ LYGIN, V.I.
Y
Infrared spectra and energy of interaction in the adsorption
of aromatic compounds on aerosil. Kin. i kat. 5 no.5:935-
938 S-0 164. (MMA 17:12)
1. Institut fizicheskoy klilmi AN SSISM i Moskovskiy gosudarstiennyy
universitet imeni Lomonosova, ichimichoskiy fakiilltet.

-GALKIN, G.A.; A.V.; LYG-.rN, V.I.
Irariations in the infrared opectrum of benzene acisorbed on aerosil
as a function of coverage and dehydration of the surface. Kin.i
kat. 5 no.6:1040-1048 N-D 164. (MIRA 18--3)
1. Moskovskiy gosudarstvennyf universitet imeni Lomonosova,
khimicheskiy fakulltet i Institut l'izicheskoy khimii AN SSSR.

BORTSOVA, F.K. (Moslkva); GALKIN, G.A. (Moalwa); Kl,'.'EI,EV, A.V.
KORnLFV, A.Ya. (bf,~~kva); LYGIN, V.I.
infrared spectroncopy in the study cf the nature of the adhesive
layer on the surface of polytetrafluorethylene. Koll.zhur. 27
no.3.*320-325 W-Je 165. (MIRA 18:12)
1. Submitted Dec. 9, 1963.

GALK-IN, F.Ya.. KAIUMOV~A~M.
Binary-to-,Aci~lwd canverialons In Jntag.-al digital -2(xnputl-,ra.
Two ryv. uohnb. zav.; prib, 7 iiool+.,86-89 lf~4 (ITIRA 18-61)
1. T-anipgradekly ins titut, tochnoy mekhaniki i opt~kl . ILAk.--
mendovana ka-Ife-L-oy ao-heLnc~-~sha3mahchikh priborur.

GALKIN, G. T. , Cand Biol Sci -- (diss) "Beeties in the pinewoods of the
TuViM-,kaya Autonomous Oblast' and menwires in tht,
Krasnoyarsk, 1960. 22 pp; (Ministry of Higher an(] Secczdary Speci~~Iist
Education RSFSR, Moscow Forestry Engineeriw7 Inst); 150- copies; price
not given; (KL, 51-601 11?)

GAIAINO G.I.
Biology and ecology of Rhombomyx holosericea. F. in Tuvae Zool.zhur.
40 n*44039-1045 J3. 161* (MM 14:7)
I* SiberUn Research Institute of Forest Nuwgewut and Exploitations
Krasnoyarsk
(Tuva Zt;wm= Province-Alcarabasid") (Forest insects)

G LINj .. P,j..-,_kand.biolog.nauk
Siberian green scarab (subfamily Rutelinae, tribe Rutelini) in pine
forests of the Tuva A.S.S.R. Trudy VSNIPILesdrev no.5;76-92 162.
(NIERA 16:5)
1. Nachallnik laboratorii zashchity less, ot vrediteley i boleaney
Vr,stochno-Sibirskogo nauchno-issledovatellskogo i proyektnogo
institute, lesnoy i derevoobrabatyvayushchey promyshlennosti.
(Tuva A.S.q,.R.--Searabasidae--"rmination)
(Tuva A.S. S.R. -Forest-I~'Insects)

GALKIN,D," kand.biolog.nauk
Ecologically favorable sections'for the development of the,tent
caterpillar DendrQlimus sibiripus in forests of Krasnoyarsk
Territory.' Trudy VSNIPILesdx#,'v no.503-97 162. (MIRA 16:5)
1. Nachallnik laboratorii zashchity lBsa ot vrediteley i bolezney
Vostochno-Sibirskogo nauchno-issledoVatellskogo i. proyektnogo
instituta. lesnoy i derevoobrabatyvayushchey promyshlennosti;
(Krasnoyarsk Territory--Tent caterpillare-Extermination)

- - .-GAILTN,_ Gtl,__ . f
Ecology of tent caterpillars in the reservations of Kra~noyarsk
Territory. Vop. ekol. 705-37 162. 1 (m14 16:5)
1. Sibirskiy na'uchno-issledovatel'skiy institut lesnogo khozyayatva
i ekspluatataii, Krasnoyarsk.
(Krasnoyarsk Territory--Tent caterpillaTs)
I

GALKIN9 G.I., kand. biolog. nauk
The tent caterpillar Dendrolimus sibiricus in the forests of
Krasnoyarsk Territory. Trudy VSNIPILesdrev no.704-107 163.
(MIRA 17:21,
I%r " -

CIALKIN, G.I., kand. biolog. nauk; GREBEN-SHCHIKOVA, V.P., nauchnyy
sotrudnik
Primary pests of pine stands in Krasnoyarsk Territory. Trudy
VSNIPILesdrov no.11:57-67 164. (MIRA 18:11)

USSR/Physier. - Senicanductivity Oct.52
"Electric Properties of Sb2S3 and B G. Galkin)..
G. Dolgikh and V. Yurkov '2S3,
"Zhur Tekh Fiz" Vol 22, No 10, pp, 1533-1539
Thermal relations of electric conductivity of swvles
-o Sb2S3 and B12S3 were studied. Mgnitude and sign
of tamp coeff of electric conductivity of sulfides
:--c and thermo-emf of a metal and semiconductor paired
essentially depend on thermal treatment of samples
236T69
and on range of tenp. Results of tests are inter-
preted within frames of zone theory of semiconductors.~'
Indebted to Z. I. Kirlyashkina and L. I. Baranova.
Received 4 Jun 52.
236T89

L-M/Electricity - Semiconductors G-3
Abs Jour : Referat Zhur - FJ.zika, No 5, 1957: 12183
Author : Vavilov, V.S., Smirnov, L.S., Galkin, G.N., Spit,_,yn, A.V.,
Patskevich, V.M.
Inst : Physics Thstitute, Academy of Sciences, USSR, lbscow.
Title : Formation of Defects or Crystalline Lattice in Germanium
Upon Bombardment by Fast Electrons.
Orig Pub : Zh. tekhn. fiziki, 1956, 26, no 9, 186cw;-1869
Abstract : Thin (50 microns) platelets of single-crystal n-germaaium
with bombardment of monoenergetic electrons with energies
from 4W to 1000 kev. The concentration of the lattice
defects arising thereby was calculated from the variation
in the specific resistivity ~ of the specimens before
and after the irradiation. The threshold value of the
, starting with which q increases upon
energy Wmin
Card 1/2

AUTHOR VUL,, B. VATI LOT, T. S. , SMIRNOY, L. S
GALKIN G 11.9 PATSKETICH.T.M.~
-
,
~
E
!
YN~N,
SPIT
TITLE On the transformation of the energy of P-particles int--~
electric energy in germarium crystals with P-N transitions.
(0 p.raobrazovanii energii P-chastils v eleotroenergiy*u -v
kristal.lakh germanlya s P-N-perek~cdxil, - Russian)
PERIODICAL Atomnaja Energkya 1957, Tol 2, Nr 6~ PP 533-537 (USSR).
ABSTRACT ID. 1955 the authore carried out experimonts in the deter-
minatiou of the de6ree of' efficiency of the transformation
mentioned in the title. The P-N transitions were obtained
by the melting of indium. Sr90 - Y90 preparations served as
sources of P-partiolea. The total activity of the prima--y
radloa~,-tive preparations amounted to 50,1100, and 200 milli-
ouries. As source Of P-PELrticles strontil,!m sulphate tablets
with 50 and 100 millicurie and stroatium carboua.te.tablets
.
with 200 millicurie were used. A diagram shows the P-spectra
of these sources. Also measurements during irradiation of
a semiconductcr with artificially accelerated electrons (400
to 1150 keV) were carried out-, The dqgree of efficiency
CARD 1/3

On t he transformation of the energy of P-partioles i1to"
electric energy in germanium crystals with P-B transitions.
of the transformation of radiation energX depends on the
following quantities: energy F_ which must on the average be
ueed foz the production of a surplus pair of charge carriers;
share of the a-carriers reaohiug the P-N transition-i a reac-
tor which takes the reflection and absorption of P-partioles
and the geometric sonditions of the trannformer into acocunt.
& was determined by a special experiment (3,7.t 0,4) eV
was found,, The amount of a (the significance of a is not
given) attained 0,65 in the transformers used. A diagram
shows the ionization curves for electrons with from 420 to
920 keV. The degree of efficiency of the transformation was
determined from the load characteristics! at the source with
200 millicurie it attained the value of 0,06 % with an
electromotoric force of 13 millivolts and a short-eircuit
amperage of 444 microampgres. The experimentally ascertained
ceasing of the growth of the degree of efficiency of the
transformation in the case of strong electron currents
( -1 Ovi watts/cm2) is apparently connected with increased
recombination. Defects in the crystal influence the motion
of the electrons. With increasing duration of irradiation
CARD 2/3

On the transformation of the energy of P-partioles
into electric energy in germanium crystals with p-1 transi-
tious~
the degree of efflolemoy of Us transformer d1mlidskes.
Further details are mentioned.
(Witk 6 Illustrations).
ASSOCIATION: not giTex.
PASSESTED BY; -
SUMITTn: 18.1- 195T-
LVAIL&BU; Library of Congress..
CaD 3/3

AUTHORS: Galkin, G.N. and Vavilov, V.S. 120-4-14/35
TITLE: Measurement of the lifetime of Charge Carriors and their
Drift Mlobility in Silicon. (Izmereniye vremeni zhizni
nositeley zaryada. i ikh dreyfovoy podvizhnosti v kremnii)
PERIODICAL: Pribory i Tekhnika. Ek-sperimenta, 1957, No.4,
pp. 52 - 56 (USSR)
ABSTRACT: Apparatus is described by which the lifetime and mobility
of electrons and holes in mono-crystallic silicon can be
Cardl/4
measured. The pulse method is used and traps are filled by
illumination of the crystal. The apparatus can be used for
measurement of lifetimes from 1 jisec.
The method is based on the drift under the action of an
applied electric field, of minority carriers introduced into
the semi-conductor by a point contact (emitter) to which is
applied s short pulse (0.3 4sec). After a time lag, a rect-
angular pulsed electric field is applied to the specimen.
The introduced non-base carriers move along the specimen and
on passing the collector, create an opposition pulse
(collector response) whicl.l is displayed on an o-scillograph.
The block diagram is L~iven in Fig.l and the oscillogra-ph
display in Fig. 2. By clian6inF, the time lag, a dif-ferent
height of the collector response H can be obtained,

120-4-14/35
Measurement of the Lifetime of Charge Carriers and their Drift
Mobility in Silicon.
depending on the maximum concentration of -te non-base
carriers at the instant they pass near the collector. For
a short emitter -ulse and with small deviation from equi-
librium concentrz-.itl'on, H is siven b,.,:
H ex-.o t/V
The first factor corresponds to diffusion and the second
to recombination. Here, -t is the lifetime of the minority
carriers. Log (HV~T) is plotted against t giving a
straight line with a slope equal to -1/7t. The presence of
traps can be detected by the shape of the collector response
(Fig.3). The specimen is illurl"nated until asy=-etry of the
collector response is eliminated.
The injection level can also be Judged by the shape of the
collector response, since a large quantity of mlinori-It-j-dy
carriers changes the conductivity of the material and causes
asymmetrical distortion of the pulse (Fig.4). Thus the
method indicates wlien the 'traps are filled and when the
concentration of the minority carriers is sufficiently low.
Card2/4 To avoid non-linearity of the collector, contact with small

120-4-14/35
IJeasurement of the Lifetime of Charge Carriers and their Drift
Mobility in Silicon.
concentrations of the non-base carriers near the collector,
-the intensity is increased by illumination of the surface near
the collector by white light (Granville and Gibson method,
Ref~- 7 and 13).
The mobility ud was determined by the formula:
Ua = L/t . B
where L is the distance between the emitter and the collector,
t is the time between the application of the pulse and the
reception of the response, E is the applied field.
The time t is found by extrapolation of the graph of H
against t to H= 0 (Fig.?). L is measured by a measuring
microscope, and E is found by backing off an oscillograph
displaying the voltage.
The table shows that for measurements t > 3 Itsec., the error
does not exceed 10116, and down to 0.2 4see. 100%. The errors of
Ud do not exceed 101% and compare well with values given in
the literature. There are 9 figures and 13 references, 5 of
Card3/4'hich are Slavic.

120-4-14/35
Measurement of the Likbime of Charge Carriers and their Drift
h,1obility in Silicon.
ASSOCIATION:
SUB11ITTED:
AVAILABLE:
Card 4/4
Physics Ir--stitute imeni P.N. Lebedev Ac.Sc. USSR.
(Fizicheskiy iftstitut im. P.N. Lebedeva AN SSSR)
March 2, 19/5?.
Library of Congress

53-la-8/18
AUTHOR VAVIIDV, V.S.,q MLOVETSKAYAo V.M., GALKIN, G.N., LODSMAlls A.F.
TITIE Silicon Solar Batteries as Sources of -e-z"Ti-etric Feeding of Art1ficial
Earth Satell'+o~.-g
'Kranniyevyye soinedzWe batarei kak istochniki elektrichaskogo pitaniya
iskusstvennykh sputnikov zemlic Russian).
PERIODICAL Uspekhi Fizz. Nauk, 1957., Vol 63, Nr la, pp 123 129 (U.S.S.R.)
ABSTRACT For artificial earth satellites it is of advantage to use solar batte-
ries in connection with buffer accumulators because they are effective
during the whole time of flight of the satellite (outside of the earthts
shadow).
The principle of the effect of a semiconductor transformer with P-N-
-transitsionse Ln the course of this process the energy of soUr =ra-
tion IB -CiFxaformed into electric energy as follows: A photon is ab-
sorbed and an'lelectron-hole" pair is produced. In the case of lacking
P-M-transition, howeverq the concentration of the electrons and holes
In the semiconductor would increase in the vicinity of the absorption
domain of light. The authors here investigated the diagram of the ener-
gy states of the electrons and holes in the semiconductor in the vici-
nity of the artificial produced P-N-transition. This diagram then supp-
lies information concerning the mode of operation of the photoelement.
Card 1/4 Within the domain of the, P-N-transition there exists a potential barrier,

Silicon Solar Batteries as Sourdes'of the Electric Feedinp. of Artificial
Earth Satellites --a
5_- - 4 -8/18
the height Vk of which can be nearly'as great as the width E 9 of the
forbidden zone (in the case of silicol 131 The electrons and holes
produced on the occasion of the absorption of light diffuse to P_M_
-transition.' The potential barrier bf the P-N-transition then probably
"separates" the electrons and holes so that the electrons ady.-imce free-
ly to the domain of the electronic (N)-conduction of the cqstal to
which they then give a negative charge, On the occasion of trang"Ition
into the domain of the hole-conditioned conduction line the holio charge
the crystal positively. 40 a result of the change of the concentrations
of the charge carrier the height of the potential barrier decreaseso A
diagram shows the dependence of the effective coefficient of a perfect
semiconductor transformer with P-14-transition upon the width of the for-
bidden zone. The effective coefficient at first increases considerably)
attains its maximum value at a width of 1,3 eV, and then graduaUy de-
creases again. In none of the known cases was the i4eal effective use-
ful coefficient of about 22 0/0 attained. The'auth6rs developed a me-
tbod for obtaining P-N-transitions in monocrystals of P-silicon by the
Card 2/4 thermal diffusion of phosphorus from the gaseous phase. Various'details

53-1a-8/18
Silicon Solar Batteries as Sources of the Electric Feeding of Artificial
Eartb Satellites
of this method are discussed. The conbtruction of an experimental 31li-
con photoelement is shown in an Slustration.
The Volt-ampe're characteristics and the charge characteristics:
TM volt-amp6re characteristic o? a hotoelement with a surr-ace of
0.95 eml irradiated by sunlight is shown In a diagram. For the darkness
volt-ampere characteristie in the domain of the direct current a formula
is written down. The optimum load resistance R can be determined from
the load characteristic as well as by computattSn. Thb authors here
point to the following means of furthlar lncreas~ng the effective coeffi-
cient of transformation.*
1.) Increase of the effective useful coefficient a to one,
2.) Decrease of the resistance '