# SCIENTIFIC ABSTRACT GUBANOV, A.I. - GUBANOV, E.P.

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CIA-RDP86-00513R000617210013-0

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RIF

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S

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100

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November 2, 2016

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13

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Publication Date:

December 31, 1967

Content Type:

SCIENTIFIC ABSTRACT

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GUBANOV, A.I.; KRIVKO, N.I.; REYNOV, N.M.
Experimental determination of polaron mass in cuprous oxide. Zhur.
eksp,i teor,fise 38 no*2:341-344 F 160. (KM 14:5)
1. Leningradskiy fisiko-tekbnicheakiy institut, Akademil nauk SSSR.
(copper oxide) (Semiconductors)
GUBANOV, A.I.
e__ - ---
r
. Bam theory of partially ordered system. Fiz.tver.tela 3
no*7:2154-2159 J1 161. (MMA 14:8)
1. Fikiko-tekhnicheakiy institut AN SSSR imeni A.F.Ioffel,
Leningrade
tsyntams (chemintry)) (Energy-band theory of solids)
P72084
s/lal/61/003/008/014/034
B102/B202
AUTHOR: Gubanov, A. I.
---------------
TITLE: Theory of impurity levels in amorphous semiconductors
PARIODICALs Fizika tverdogo tela, v. 3, no. 8, 1961, 2336 - 2341
TEM B. T. Kolomiyets et al. studied the effect of impurities on the
conductivity of vitreous semiconductors (As2 Se 3-As2Te3). They-found
that in vitreous state, d remains unaffected while in crystalline state
it is considerably influenced. In the vitreous state lnd - f(l/T) does
not show the characteristic salient point of impurity semiconductors.
I. Z. Fisher (FTT, 1, 192, 1959) attempted to explain theoretically the
lack of impurity conductivity in amorphous bodf-es. His concepts are,
however, refuted in the present paper. The author assumes that the lack
of an impurity conductivity is related to a considerable shift of the
impurity levels, especially to a lowering of the donor level. This level
shift can be explained by various hypotheses. One of them is analyzed
here; it is the assumption that the impurity atoms in the amorphous body
have about the same potential as in the crystal, that the locallevels on
Card 1/3
.- I A
Theory of impurity...
97284
B/181/61/003/008/014/034
B102/B202
the background of the quasiperiodic potential occupy, however, another
position than in the crystal. A theoretical study shows that this
hypothesis is impractical. The author then discusses a second hypothesis
in which the following assumption is mades In the amorphous body the
impurity atoms occupy about the same position as in a crystal, however,
they cause a rearrangement of the surrounding atoms such that the donor
levels approach the filled band, the acceptor levels approach the con-
duQtion band, The levels of the interstitial atoms were calculated by
the method of the effective mass (according to H. Reiss). The method of
the strongly bound electrons (F. E. Williams) leads to the same results
In an amorphous body, the impurity levels lie considerably lower. If such
an atom acts as donor in the crystal it exerts the same function also in
the amorphous body. Here, this lowering of the level is considerably
stronger than the heightening with unchanged potential in the hypothesis
discussed first. This hypothesis seems to be suitable to explain the
non-existence of impurity conductivity in vitreous semiconductors. A
third hypothesis, which is basically possibleand according to which the
impurity atoms in the amorphous body have other positions than in the
crystal, is not specially dealt with, since it cannot iully explain the
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97284 S/181/61/003/008/014/034
Theory of impurity... B102/B202
effect. I. M. Lifshits and N. D. Potekhina are mentioned. There are
15 referencess 12 Soviet-bloc and 3 non-Soviet-bloo. The three refer-
ences'to English-language publications read as followai 0. T. Koster
and J. C. Slater. Phys. Rev., 21, 1167, 19541 P. E. Williams. J. Chem.
Phys., i1, 457, 19511 H. Reiss. J. Chem. Phys., Zj, 681, 1956.
ASSOCIATIONs Fiziko-tekhnicheskiy institut im. A. F. Ioffe AN SSSR
Leningrad (Institute of Physics and Technology imeni
A. F. Ioffe AS USSR, Leningrad)
SUBMITTEDs February 6,. 1961 (initially) and
March ~, 1961 (after revision)
Pard 3/3
2 3 B104/'B205
AUTHORSt Gubanov, A. I. and Pushkarev, 0. Ye.
TITLE. The Hartmann problem in magnetoplasmadynamics
PERIODICAL: Zhurnal tekhnicheakoy fiziki, V.-31, no. 5, 1961, 621-623
TEXT: In magne~ohydrocVnami'cs, ' Hartian''n et al. (Mat. -fys. Medd. t a, - 6
and 7, 1937) studied the motion of plasma between tw'o immobile plates.
The plasma was assumed to have isotropic vi scosity. The present authors
have studied the case where the'magnetic field is directed along the
x-axis and perpendicular to.the plates. A similar investigation has been
carried out by Gubanov et al. (ZhTP,.Xxv, 1053, 196o). The symbols and
equations introduced in this paper are also used here. These equations
differ from those presented here:
Card 1/4
The Hartmann pr4lem in...
S/057/91/103 1 /005/0 17/
B104/B205
H,
d?
'1b' d2vo
-#--
(Ve Q
HO -I.
HI
at
-;
qlb,l T:, 'T'
He E*-1L4
T:;-.&T -rx
only in the terms with dp/dx (the x-axis is directed parallel to the,
pressure gradient). In addition, ri 1 T1H0/H - X, is valid. The boundary
conditions for the veloLtieq aret V. a v y -.0 at z - 0 and z - h (2);
h is *the spacing of the plates. Two cases are to be distinguished;
1) E and E are given; if the plates are conducting, E - E = 0.
x Y x y
2) Hx 7 .HY - 0 at z - 0 and z - h. From the system *(1) and (2).the
following solutions are obtained for the first case:
Card 2/4.
ilj~i f:AV 'till! t41!1,MjM;r!W V.
The Hartmann problem in... 3104/ / 32C5
ch ki h
V,-#--IV,, (VO t
(3)
chk
dp as
.O d
E.. 4)
E,,
,
2 2
dX
x H
0
'HO
In analogy to the previous,papel-, the following expression is then
obtained: ch*kl
1 (.9 - -7)
H
s, X -
-#- i * (5)
h dx
chk,
wherefrom it follows that
H. W, = (H. -#- iH,),...* f U. -4- ij,) dr (H. iH,),-, -+-
-4-2h k,
A k, d
p
41m f0 L z. (6)
02 r:;-Xt(v-o h HO dX
k, ch k, -y
By eliminating R X and E from.(3), (4)?.and (6), the solutions
39
Card 3 4
22786
5t'057111611`003, 0 1 T/ 020
The Hartmann pro8lem in... B104/B205
d A (I m ch kj.-y - ahf~
2
I 'U JV
2
sh.ki
A4% ph kj
('-A
(z (8)
sh ki
are obtained for the.sooond case. If the magpetic field is parallel to
the plAtes, the.ilasma will move like in hydrbdynamice but with varying
viscosity. If the direction of the magnetic field and the direct,ion of
the moving plasma form.& iight angle, a' pressure gradient will appear.
Yu P. Lun1kin is thanked for discussions. Thdre are 3 referencess
2 ~oviet-bloc and 1 non-Boviet-bloc.
ASSOCIATIONi Fiziko-tekhhicheskiy institut im. A. F. Ioffe AN SSSR
Leningrad (Institute of.Physics a~d Technology imeni
A. F. loffe, AS USSR, Leningrad)
SUBMITTED: December 7, 1960
Card 4/4
GHEVfCHEWV, A.D. 0 2T99-A-A-I--
Precise formillstion of the kinetic theory of polywr strength*
Bond and cohesive erwra in po2ymrs.
FA"rt .presented at the 13th Conference on High-mlecular compowds,
mumov, 8-n oct 62
41 tj 1.
S' s/ial/062/064/004/01 3/042
B 104/~ 108
m-.ro~~S: GUI,anoV, A. 1., and Chevychelov, D.
T 1'2 Tlheory o-f the breaking streneth of oo1i:l polyners
P""11TODICAL: Fizila tverdo,--o tela, v. 4, no. 4, 1962, 928 - 933
TE'XT: This is a critical comment of T-. Buechelc; theory (J. Appl. Phys.,
28, 764, Ic)57)- 'Phe tneoretical strength of a polymc~~ 13 calculated on
Tne asswi-lption that the botential energy of interuczion between neighboring
ato-is of polymer chains ~ar, be descri.bed by a 'o.orse func '.ion
U(r) = D, exp(-2(r-R)/a) - 2exp(-(r-R)/a)~.
D is the maxijxam d,~~Fth of tht Potential -.-,,ell; a chara~te-,1".--~z the. carvatu-re
' - L'
of U(r) near its minimam, &,nd E is the equi21br.1u.a interatomic distance.
For the time -until a sample breaks under a Given load, the following
relaLion is obtained:
ln(';-/z D/kT - In exp (acre/kTN)(1 + ln(2DN/aa' 1j , vihlere 11A),
0 0
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S/181/62/004/0011/0 13/042
Theory of the breakin.- strength ... B'1CM,/'_q1O8
is the toz;a! number of chains pa.-3sin~~ throu,-h unit cross section.
1, In the
case of polyvinyl chloride, polypropylenta, and polvethylene, the calculated
*tr,:ncth i.s conoiderc-bly Ivreater than the experimental one. Canrone is an
excent~_ on. These results diverge from cixpc'ri-.ionta1 data less than Bueche's
results. Explanat ion : (1) Since pol%mer chains have finite dimensions,the
effeclVive value of 11 is influenced thereby; (2) irro!.7-,Ala_~ity viLs
considt_~!red throu~,h the factor 1/3 in the calcul%tion. Viis factor may be
6 -he sa--:T)le displays inhomoCeneities.
lower in an exact calculation. '3)
A fluctuation mechanism. is assui,.ied to be the principal cause of polymer
destruction . T n these calculations, intermolecular forres were assumed
~ U
to be small. S. Zhurkov, Corresponding 1sember AS USS'R, is thanked for
having su:~gested the subject and for discussions. There are fioures and
1 table.
A S S 0 C 1j.', T; 1 ON :Fiziko-teknnicheskiy institut im. A. z. 1--offle ZI: SSSR
Leninrrad (Physicotechnical Institute imeni A. F. Ioffe~
AS USSR, Lenine;rad)
SUL4;'."ITT-D: 11ovember 23, 1961
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S/181/62/004/oo6/020/051
B104/B112
7
AUTHOR: Gubanov, A: 1.
TITLE: Electron spectrum in one- and three-dimensional models of
a liquid
PERIODICAL: Fizika tverdogo tela, v- 4, no. 6, 1962, 1510-1513
TEXT: In a previous paper (FTT, 3, 2164, 1961), the author derived the
system
r
E=
E, E, -t-- 62W kki
IC.k'l'(IUkk'l'- urkuw)
A=j E- Ek W~
gc:klukkl
B=
'r- (4)
c:. - -5 1 .4, ).
k, (C.N
Card 1/2
jr Akr 'Saraff-0 Fuiz -rP.,qP6LAr10A)
3/181/62/004/006/020 /051
Electron spectrum in... B104/BJ12
for the n-th energy state of a disordered system,using the band theory of
liquid and amorphous conductors. Cnk are the expansion coefficients of the
*ave functions of the n-th state; 0 is the energy of the n-th eigenstate of
1~
a crystal; F_ is a parameter characterizing the degree of short-range
perturbation; w and U are matrix elements of the perturbation operators.
kk ~k
-a.4.~_n4ng of the allowed bands in one- and three-dimensional liauids
is s--udied from (3). In a one-dimensional liquid, the mean broadening E
of the allowed band is a linear function of E. In a three-dimensional
liquid, Z is proportional to e2. For small E, the band broadening in a
three-dimensional liquid is considerably smaller than in a one-dimensional
liquid. The model of a dimensional liquid cannot be used for investigating
a three-dimensional body.
ASSOCIATION:. Fiziko-tekhnioheskiy institut im. A. P. Ioffe AN SSSR
Leningrad (Physicotechnical Institute imeni A. F. Ioffe
AS USSR, Leningrad)
SUBMITTED: January 25, 1962
Card 2/2
5/181/62/004/010/036/063
B102/B112
AUrHORt Gubanov, A. I.
TITLEs Local fluctuation levels in amorphous semiconductors
PERIODICAL& Fizika tverdogo tela, v. 41, no. 10, 1962, 28T3 - 2879
TEM Earlier (ZhETF, 26, 139, 1954; 28, 401, 1955; FTT, 2, 60, 1960;
3, 2164, 1961), the author showed that als6 amorphous bodies and liquids
may have an electronic band structure. Here it is shown that these energy
bands also have local levels. The occurrence of such levels is attributed
to atom fluctuations and is dealt with theoretically. These "fluctuation&l
local levels" are studied in the same way Thai Koster and Slater (Phys.
Rev. 95, 11679 1954) studied the impurity-levels of crystals (see Gubanovt
--.FTT, 3, 2336, 1961). If the perturbing potential acts only on a small
number z of localized wave functions Ti the enorgy of the local level is
determined by. I , .
A L., V,, 4.,j 09 as q 7-= It z;
V,1= Los dU (2)
-E--- Y,- W.
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3/101/62/004/010/036/063
Local fluctuation levels... B102/B112
G is the number of cello in the basic region, E or El(-k) the energy of
p
levels of tKe unperturbed system, a ps are the eipansion coefficients of
the wave function y with respect to the local
upetions Ti, and 11 is the
fp
volume of the Brillouin zone., Eq. (1) is studiqd-only for two extreme
ca,sest semiconductors with's purely ionic bond and semiconductors with a
TiFely covalent bond. In the former case
Ar, > b -!o _~o _e m -ber? 4van-
er -'W (5)
r0
QA3 (7)
1 Vil I > 8WM"19
with E