SCIENTIFIC ABSTRACT GUREVICH, V.L. - GUREVICH, V.Z.

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December 31, 1967
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SCIENTIFIC ABSTRACT
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ACCESSION NR: -AP4019226 small changes in amplitude. it is fouA~ that the nonlinearity of electronic origin appears as a rule much earlier than the nonlinear- ity of the ela'stic,properties of1the crystal. The nonlinear effects lead to the existence of stationary waves which propagate in the crystal without amplification or.dampirig. An expression is derived for the amplitude of the waves as a function of the stationary elec- tric field.strength. The damping or growth of waves that differ little from stationary waves is studied. It is shown that both os- cillation modes are stable at high viscosity, so that a critical value of viscosity exists in the case of the second mode. Orig. art.. has: 68-formulas. ASSOCIATION: Institut, poluprovodnikolr AN SSSR (Institut:e of Semi- conductors, AN SSSR). SUBMITTED: 27Junq'3 DATE ACQ: 27Mar64 ENCLt 00 "4U13 CODE-- P11 NO 1110P AW11. 006 6q1111R1 005 Card 2/2 GUREVICHP V.L.; KIRSOV, YU.A~. New oscillation mode of the longitudinal magne tore, I sltance in semi- conductors. Zhur. eksp. I teor. fiz. 47 no.2034-743 Ag 164, (MIRA 17~-10) 1. Inatitut poluprovodnikov A14 SSSR. ~T L-15013-65- -Y-4.,T jP ACCESS1014 NR: AP4047897, 60 /64104i/60,4411t/1301. AUTHOR: Gurevich V. - L. r TITLE: -Buildup of oscillationg, In an utistable system, 51 SOURCE: Zhurnal eksperimeentallnoy i teqretfch0dk.o5F, f iziNi'l 0,47t no, 4#' `.~964~1 V TOVICTAGS: piezoelectric semiconductor.~ acouitic 1~ave,:~ it-lastIc~4ibratioil, electron density fluctuation, acoustic iust6illty -ABSTRACT: The first part of the article:,Was -published i I i E TT.~;, 1 354'' (1964) The buildup of acoustic-fluctuations in a~. piezoelectric: 46r the case of a sonic instability induced by; 6~ constanC A.ectgiic field and f oil ~the case where semiconductor dimensions limit: tbe I growth of the'~f T.Urtuitioill"; tol a level such that the nonlinear effects haveno' opportunity. it .o a major rldle~.An: ~equation is derived for the fluctuation inteisi over a fgeiquenity interVallauac~ broader than that involved in the analogous equation in tlie firil t, part- of ~~e P~jPer. It is sh(rwn that the acoustic fluctuations in a piezoelectric sexitconductor can described in luerms of the equations of eliasticity theory urith rarldom forcea, all& a method is indicated for calculating the correlation fuuctloijitri between the raiia6st` a rd C C L 161o.2 65 ACCESSION NR: AP5000331 the linear theory can be errployed for th6:deocri~4on- ~It'is C 1: shown that as. the dantping? factor.dtecreases.and tehds 66!',zero, the line loses the Lorentz shape and lts~ form, is 4ffeO' dit ;ed 6ji tite mensions of the semiconductor in the direction i3v'*:hiCA-t ~~the~ flue- tuations increase. tt uat~bn pL-verses ap'pl When the sign of the a en ntzi its absolute value increases again, the line resur~es t1id, Ltire shape. In order to determine ~the line shapet, the '~-auth 'constrlict; a phenomenological theory of the time coirelAion~!tof the sound fluctuations. This is a continuation of ea~irlier:ybrk by 64e of the authors (Gurevich, ZhUP. v.:.146#' 354, 1964 a~d' v,,-~. 47, 1291,~ t 0 'o 1964)., Expressions are tben:deriwid for,~.the exti# i n. c ej~-ficxontir which can be compared with, experiment.- Such.a compi~risori would when the nonlinear effects, whi6h.the theory can* aC;pres3ent not 6%- plain, begin. ~It is shown that evdn in' the,lihearliao 'icj~ in ther' the intensity of the scattering can exceed that occl~irli modynamic equilibrium by two or three orders of naghitu&. The theory oE growing fluctuations conistructed iw the Da pdra 2/3 rd L 14031-65 ACCESSION-NR: AP40436 2 ........ f v6drdkov, Akad6mii~ 6auk; S$SR Institut polupro n6tiLl~ te ndt-ic-tors, )Of Semico MarG4 j, ENCL.&~i SUB CODE: Sd 'No Pjso zov.. '~00?1 . OMMRi 1001 C . Card V3, 77z,l L 6452-66 EWT(l)/EWT(m)/EP?(n) -'2)'T/E'dP (t)/BWP(b)/Ef;D(b) --3/EWA(h)/ATC(m) A(MIN-STON NR- AP5019857 IJP(c)/ JD/Vgl/AT UR/0181/65/007/008/2400/2412 AUTHO~: -- -1jantseVich, S. 1,V 1.jGurevichy. V. L. ~-i 1; A - TITLE: Theory of the acoustoelectric effect in type n-Ge and n.-Si-semiconductors v t7 SOURCE: Fizikatverdogotela, If- 7p noo 6,;TA 2400-2412 TOPIC TAGS: --~jilicon`gemiconductor# germanium"lemiconductor, acoustic effecty acoustoelectric effect, kinetic equation, impurity scattering, phonon, relaxation process ABSTRACT: The authors construct 0. microscopic theory of the acoustoelectric effect first observed in marq-valley semiconductors by Ifeinreich et al.,(fts. Rev,, V. 114, 33Y 1959). They show that the earlier phenomenological theories of this ef- fect are applicable only in a narrow region, outside of which the expressions oll- tained for the acountoolectric cinf differ from experimental results attainable by contemporary experimental techniques. 1~y solving the kinetic equation, they obtain expressions for the electroacoustic cu=ent, valid also vhon the relaxation times for the transition between valleys is of the same order as the time of establish- ment of equilibrium within a given vallt7.. Two cases of intervalley relaxation are considered: elastic transitionaj, due tciscattering by impurities, and inelastic transition with absorption or emission of a phonon with wuve vectar equal to the Card -1/2 L6452-66 ACCESSION WR: AP5019857 distance between the valley centers. Expressions for the current in the case when the two relaxation times differ greatly are also obtained. In noxy cases the ex- pressions differ appreciably from those obtained by Weinrelch et al. and those ob- tained in the phenomenological theory of V, L. Gurevich and A. L. Efros (Zhl'.17 v. 44, 2131,, 1963). The calculation does not tako into account, electron- electron in- teraction, and is therefore valid only :Lf BCat4mrlng of the electrons by plionons predominates, or in the case of impurity scattering., when the density of the acat- tering centers exceeds the density of the conduction electrons. (trig. art. has: 55 formulas. !/T/, cl~'- ASSOCIATION: Institut -poluprovodn1kov Jff SSSR# Leningrad (Institute of Semicon- ductors AN BSSR) suBmiTTED: o6VAA5 EML: 00 SO CODE SS NR REP SOV: 007 OWR t 003 UW Card 2/2 .... ......... L 403 -66 a1T(1)/EPF (n) -2/T/I=(b -3/1-MA (h)/ET0 (m) 1JF(c) VW/AT ACC NR: APS027397 SOURCE CODE: UR/0181/65/OQ7/01113218/3226 1"2 AUT110R: Gurevich. V. L.; Payk_bjjqpn,_ B.A., ORG: Institute of Semiconductors. AN SSSR. Leningrad Unstitut poluprovodnikov AN SSSR) TITLE: Theory of sonic emission jn pie SOURCE: rizika tverdogo tela, v, 7, no. 11, 1965, 3218-3226 TOPIC TAGS: sound, semiconductor theory, piezoelectric effect ABSTRACT: The paper is a direct continuation of a previous article by these auth- ors U. L. Gurevich, B. D. Daykhtman, Zhbl'F, 49, 960, 1965). A doped semiconductor with current carriers of a single sign assumed to be electrons is considered, or alternatively a photoconductor with a short hole lifetime, e. g. CdS. A theory is proposed to explain the mechanism responsible for generation of standing sound waves of low intensity in piezoelectric semiconductors in a steady electric field. Orig. art. 48 formulas. SUP I-OUL: SS/ SUBM DATE: 03HaY65/ ORIG REF: 008/ GTH RM 006 Card 111 L 1~1-jo_b% t~kl ACC AP5024719 'SOURCE (,,ODVo UP/()056/65/049/003/0960/09711 AUTHORS: Gul,evich, V. LJA'_'L_"aykhttian, B. D. ORG: Institute of Semiconduc. tors - Academy-of Sciences SSSR (Inatitu't P01UProVodnikov Akademii nauk Msh) Vj(~5 ILI TITLE: Nonlinear theory ofLsound Instabilit In Piozoelectrics SOURCE: Zhurnal eksperimentallnoy t teoreticbeskoy fizikt, v. 49, no. 3, 1965, 960-9711 TOPIC TAGS: sound wave, piezoelectlic crystal, semiconductor cryntall acoustic transducer ABTR.ACT: This is a continuation of an earlier study of the role of nonlinear effects in the propagation of traveling waves (ZhETF v. 46., 5981 1964). In the present article, a nonlinear theory Is constructeJ,-,,,, for small-amplitude nonstationary waves traveling in piezoelectric semi- 1. conductors situated in a constant magnetic field. TIZ -queg-tionof hoW__1 the stationary waves are formed Is discussed. It is shown that a trav- eling sound wave goes over when amplified into a stationary wave pro- vided the nonlinear correction to the damping coefficient of sound Is greatr-, tbah zero. A calculation of this correction is performed by th~- laN L 12179-66 ACC NR, AP5024719 method of amplitude iteration, and the conditions under which the correction is positive are determined6 The law governing the transi- tion of the small-amplitude traveling wave Into the stationary wave is determined for waves whose amplification coefficient and phase velocity depend on the amplitude. It is shown that the method should be applied differently in cases of strong and weak decay (or buildup) of sound waves. Orig. art. has: 85 formulas. SUB CODE: 20/ SUBM DATE: 20Apr65/ NR REF SOV: 009/ OTH REF:010 2/2 EW(l) /EWA(M) -2 ACC NR, AP5026607 SOURCE COM. UP/0056/05/049/0011/1145/1156 MHORS: Gurevich, V. L.; Katilyup, R. IRG: Institute of Semiconductors'Academy of Sciene.8 SSSH ftnstltut- ioluprovodnikov Akademii nauk SSSHr;'- Institute of' 1112yoles and M,,fl-,he--4 tatics, Academy of Sciences Lithnnnian SSH iz- 1-1--m-at4inatiki kademii nauk Litovskoy-SSRJ -LInstituF fi j 1ITLE4. Contribution to the theory of hot electrons in an anlsotropic~ semiconductor VJRGB:~ Zburnal eksperimentallnoy i teoreticheakoy.fizila, v. 49,1 to. 4, 1965., 1145-1156 OPIC TAGS: semiconductor,6rystal, crystal anisotropy, electron energy,, honon scattering, electron scattering, electric (3onluctivity MSTRACT: The authors propose to calculate within the frzi m-awork of the .eformation potential the stationary atate and the fluctuations of,,a system of electrons in an anisotropic semiconductor situated in a strong leetric field, for the case of scattering by acoustical phonons idthin ~ single energy valley with a nondegenerate bottom. No relaxation timB .s taken into account. It is shown that owing to the quasielastic 2/2 ACC NR1 APT003211 SOURCE COD 5 02 AUTHOR: Gurcvich, V. L.; Efrost A. L. ORG: Institute of Semiconductorap Academy of Sciences, SSSR (Institut poluprovodniko1v Akademii nauk SSSR) TITLE: Second sound and absorption of ordinary sound in dielectrics SOURCE: Zh eksper i tedr fiz, v- 51, no. 6, 15,66, 1693-1702 TOPIC TAGS: sound absorption, dielectric material, acoustic effect, acoustic damping! ABSTRACT: The authors derive a set of microscopic equations describing the transpo~l of hent in dielectrics in low temperatures, when the characteristic time of the normal processes is short compared with the characteristic time of uHtlapp processes. The purpose of the calculation is to indicate a new method of investigating second sound and phenomena related to it. This method is based on the interaction between the second sound and ordinary sound.. It is shown that measurement of the absorption co- efficient (and of the velocity) of ordinary sound at sufficiently high frequencies 11 I makes it possible to investigate the region of existence of second sound and various quantitatire characteristics of the second sound. New data obtained as a result of this investigation are a quantitative thoery of the damping of second sound, a theory for the interaction of first and second nound, and a theory for the damping f first sound in the region of frequencies vhere dispersion o,f thermal conductivity comes n-; to play. Orig. art. has: 1 figure and 50 formulas. SUB CODE: 20/ Sum DATE: liApr,66/ ORIG REF: 0021 OTH REF: 008 Card 1/1 - - - ----------- ACC NR, AT7004422 souRcE_'coaz: Wbooo/66/ooo/000/0130/02L~_ AUTHOR: Gurevich, Ya. B,;- Ushakov, Ye. V.; Drobysheva, Ye. K,; Osipov, N. G.; OrzT_e_1X0_v_3ZfY_,_V_.L L. :;ORG: none TITLE: Plasticity of tungsten in vacuum rolling 'SOURCE: AN SSSR. Institut metallurgii. Napryazhennoye sostoyaniye i plastichnost' pro deformirovanii matallov (Stres3 condition and !plasticity during metal deformation). Moscow, Izd-vo Nauka, 1966, 130- i134 !TOPIC TAGS: -&I-P~d tungsten, sinte e4 t%ngate rolling, I property, &i*4e*~ed b-, *&n. TRA jABS CT: The plastic properties of hydrogen-or vacuum-sintered tungsten and vacuum-arc melted tungsten have been investigated. Specimens 12 x 12 mm were sintered at 1200*C for 2 hr in a hydrogen atmosphere and then in vacuum. An.ingot 50 mm in diameter was vacuum-arc melted with a con- aumable electrode'from hydrogen-sintered tungsten. Hydiogen-sintered tungsten failed at a bendmV;eof 35 degrees, even at temperatures up to L5C d UDC: none AC.CNR:AT7004422 1100%, and remained brittle at room temperature. Cast tungsten has an elongation of 1% and reduction of area 3.5%. The respective elongation and reduction of'area at 400% were 2 -and 6% for-hydrogen-sintered tungsten and 3 and 5% for vacuum-sintered.tungsten. The latter has the highest plasticity and can be vacuum rolled with a 61% reduction at 1300% without failure, compared to 45% for hydrogen-sintered tungsten. Origo art. has: 2 figures. (AZ) SUB CODE: 11,13/ SUM DATE: 27SeP66/ ORIG REF: 002/ ATD PRESS:5117 WIN 5 - TIM 6 1 SOV/y9-70-2-12/1'1(8 AUTHORS: YLIt"yev, Yu. K., Zef lcov, N.S Shteynman, A. A. , Gurevich, V. M. TITLE: Study of the F"Livan Serie.3. III. Reaction of 2-Methyl- and 2-Ethylfur-an with MesItyl Oxide PERIODICAL: Zhurnal obshchei khimil, 196o, Vol 30, Nr 2, pp 411- 415 (USSR) ABSTRACT: The authors synthesized 1,1-dimethyl-l-(5-methylfuryl-2) butanone-3 I) and l,l-d1methyl-l-(5-ethy1furyl-2) butanone-3 W) by reacting mesityl oxide with 2-methyl- and 2-ethylfuran, respectively, demonstrating that the furan ring can react with/_~, P-dimethylvinyl group of' unsaturai- t he ted ket Ss (see scheme A), Card 1/5 Study of'the Furan Series. III. Re- action of 2-Methyl- and 2-Ethylfuran with Mesityl Oxide 77861 SOV/79-50-2-12/78 :0: C11" + C=N-C-03 + it G=6~N-CI13 + 9 CH3`/ Of I R R . _U - NZ-_ CO CH3 + It' 0 C(CHJ)f-CH=C-CH3 I CH3 I R-CHS(O, CZ"s (11) Card 2/5 .qcheme A This reaction was conducted in a round-bottom flask provided with a mixer, and a reflex condenser. The reaction mixture (the veagetAs wei,e dIssolved In hydro- quinone) was heated for 8 hr on the water bath. The reaction mass was then diluted with ether, washed with sodium carbonate and water, and dried over CaClo. *The best catalysts weve found to be concentrated sulfuric acid and boron trifluoride etherate. Repeated dist111- Study of the Pur-an SecLen,. 111. lie - action of 2-Methyl- and 2-Ethyl.fuvan with Mesityl Oxide Card 3/5 y'(86 1. 1SOV/[9_.~0_2-12/-(8 ~Ltioti yieldetl the adtlition pvoduct~;. Characteristics of (I): bp io6- 20 "0 -10-(o (1~ D _1.11,(oo; (1,,c' 0.()'(213; lt,_t "ernicarba, - 0 1 zone, white icat'IcL-., inp -gin Lt vopi,ieny I - hydrazone, yellow needles; trip 109.5-110 , wa3 charac- terized. by infrared spectvum. The 1,1-gimethyl-l- (5-ethylfuryl-2)butanone-1 (II): bp 1111 (13 mm); 20 20 11D 1 .468,2; (ij[ .0.9577; 2,4-clinitr,opi-ieny'lhydrazone, orange needles; RIP 90.5-91 0, characterized by Inrra- red spectrum. Reactions of prepared ketones were studied on example of 1,1-dimethyl-l-(5-niethylfuryl-2)butanone-3. Scheme B shows the reactants and the products of the five reactions studied. Study of the Furan Series. III. Re- action of 2-Methyl- and 2-Ethyl-furan ,1,1ith Mesityl Oxide Card 4/5 W861 SOV-79-30-2-12/78 C113 C0,^1lZQCHj)Zf,09H fill) Pit CH 11, IF I C 14 H-CH3 W W) C, If- rffCH,rJl' 4~~, I; 0*~ 013 ~~ 0 2-11, D I V*. CIH3 all N3 '?, C', CH C, 13 13 (VII) CH -C -CHZ7 C113 clirn~ -C-CHI-CH-011 w) 0 1 Cq3 OH Clis Nilt Scheme B The constants of the derived compounds6 (1) 0(,, (X, di- methyllevulinic acid (III): MP 76-76.5 ;,~2~ 1,1-dime%l- 145-methylfuryl-2)butanol-3 (IV), bp 1o6 10 mm), n D 2 1.4770, dj~ 20 0.9690, characterized by infrared spectrum; (3) 1,1-diniettiyl-l-(5-nieti-iylfuvyl-'~-')-3-aiiiitiobutane (V), bp 1OL-1050 (10 mm', n 20 1.458o, d 20 o.8814; (4) i,l- j D 4 Study ot the Furan Series,. III. Re- action of 2-Methyl- and 2-Ethylfuran with Mesityl Oxide ASSOCIATION: SUBMITTED-. ,'-(861 SOV/79-30-2-12/78 -dimethyl -1 -( 5-methylf uryl -2) but ane (Vl)-. bi) 75-760 (2o mrr,), n 20 1.4529, d 20 0-87`~8; (5) D 4 20 furyl-2)butanol-3 (VIV: bp 89-900 (6.mm), n i.48oo, 20 d4 0.9703. The authors thank L. A. Kazitsyna for measurement of spectra. There are 8 references, 3 Soviet, 3 German, 1 French, 1 U.S. The TJ,,S. reference is Ch. A., 47, 1744 (1953). Moscow State Unlversl.ty (MosKovslciy gosudarstuvennyy universitet) February 4, 1959 Card 5/5 YURIYEV, Yu.K.11; ZBFIROV, N.S.; GUREVICH, V.M. Furan serico. Part 19: Reactions of alkylfurans with -unsaturated ketones. Zhur. ob. khim. 31 no. 11:3531-3534 N 161. (mim i4m) 1. Moskoir5kiy gosudarstvannyy universitet imeni M.V. Lomonosova. (Furan) (Ketones) GUREVICH, V,M. Conference on the problems of the petrochomica.-L and oll-1- and gas- industries in t'.he light, of the de,~isionz of IJe 22A Oongress of the OPSU. Izv.Vs.uchPb.zav.- neft' i gaz 5 no.&116-120 162. -(MIRA 17:3) I, " -... 67025 7700 SOV/137-59-10-22149 Translation from: Referativnyy zhurnal, Metallurgiya, 1959, Nr 10, p 125 (USSR) AUTHORS: Smolyanskiy, R.Ye., Lukasevich, M.I., GurevLah, VA TITLE: The Importance of Treating Germanium Surfaces Prior to Obtaining Alloying Indium-Germanium p-n-Transitionll;'~ PERIODICAL: Tyazh. prom-st' Podmoskov'ya (Mosk. obl. sovnarkhoz),, 1958, Nr 8, pp 11-17 ABSTRACT: It was found out by electronographical and metallographical analyses that the layer with a distorted crystalline lattice on the Ge surface after mechanical treatment (cutting, polishing) was 60 - 90p . The optimum proportion of components in the etching agent H.0 2: NaOH was found which ensures maximum effect of Ge solution: 9 - lo cm 3 (25%) NaOH per 1 liter (30%) H202- It was stated that the Ge layer, distorted due to mechanical treatment, was fully eliminated by triple etching with the indicated agent, Oxalate agent is recommended for Ge as most efficient. The author stated Card 1/2 that one of the causes of short-circuit p-n-transitions in welding-in In I 67025 SOV/137-59-10-22149 The Importance of Treating Germanium Surfaces Prior to Obtaining Alloying Indium-Germanium p-n-Transition into Ge was the formation of "blank spots", i.e. areas where fusion of In and Ge did not take place. The author supposes that the formation of such "blank spots" can be ex- plained by insufficient preliminary treatment of Ge surface, prior to welding-in. E.T. Card 2/2 24~6) S07 '57-28-io-6/,;o ~U HORD: Smolyanskiy, R. Ye., Gurevich, V. M., Raykhlin, ;%. M., Lukasevich, M. I. TITLE: Investigation of the Industrial Etching of the Surface of Mono- crystalline Germanium Previous to Fusing With Indium (Issledovaniye promyshlennogo travleniya poverkhnosti mono- kristallicheskogo germaniya pered vplavleniyem v nego indiya) PERIODICAL: Zhurnal tekhnicheskoy f izi'v i . Vol 28, ';-r- -10, pp 2135-2141 (USSAI ABSTRACT: This is an investigation of the inaustrial etching of germanium after cutting and polishing. It was carried out by means of electron diffraction analyses (as suggested by the authors of reference 1) and by means of micrographs: The results are as follows: 1) It is possible to advance an eventual mechanism of' the etching of germanium in an alkaline agent, for which an optimum composition is given: 8 10 cm5 25~; NaOH per 1000 cm5 30-/, H202- 2) It was found that a film of Ge02 remains on the germanium surface after etching in an alkaline agent, which does not dissolve. It is, however, easily removable by rinsing Card 11/3 the etched germanium in hot distilled water. 3) In order to in- SOV/57- 2 1- 10-6/40 nvtsLigation of the Industrial Etching of the Surface of Mono -- tall ine :'-rm%nium Previous to Fasing With Indium crease the efficiency of the etching process it is recommended to rinse the germanium samples between subsequent etching treatments. 4) When germanium is saved t.hrough with steel saw blades a disturbed layer results with a thickness of 90~k. 5) Considerations are presented bearing on the difference in the absorption capability of germanium surfaces etched with alkaline agents and of such etched with adhesive agents. A treatment with the latter results in an increase of the proba- bility of a physical sorption of gases. The existence of ions promotes the sorption of moisture. 6) Recommendations are pre- sented concerning the choice and the -uniformity of etching processes of the source germanium and of the finished p-n junc- tions with respect to the type of apparatus which is to in- corporate the transistors. The electron diffraction unit of the Institut kristallografii AN SSIR (Institute of Crystallography AS USSR) in the laborato- ry if Professor Z. G. Pinsker was used for the electron diffrac- tion analyses. There are 10 figures, I table, and '-) references, Cara 2/5 4 of which are Soviet. ,07' 4,1) I i Ave.,; t i6ra t j an Ln(., I ii a w,j t.ria Iing o I' &he ;uz-: ace of' Motlocry.- ut , t 1 !1#-.. i Gc-rmanium "revious to 'Fusing itti Tnaium ':~' UIRM ITT ED :Decomber 17, 1957 Gara 5/ 3 :-J0V/'((j-4 -5 -1506 AUTHORS: Gurevich, V. M., Zheludev, I. IS., Rez, 1. 03. TITLE: Some of the Electric Conductivity Characteristics of Guanidine Aluminum Sulfate Hexahydrate PERIODICAL: Kristallogvafiya, Vol. 4, NP 5, Pp T18-722 (USSR) ABSTRACT: The author2 deocribe the meLhoLd Ifind rosult-, of the re- sistivity measurements condUCted by the use of direct current, applied to the ilngle-crystal plates of guanidine z.-tl'Luii1num sulfate hexahydrate, whose ferro- elec~ricity has been known since 1955. The plates, I cme- and 1-2 im~i thick, Cut Off transverse to the Z axis from different pyrainids of growth of an artificial single crystal of the compound, were silvered sublimating thin Ag films under vacuum, dried, some polarized by an applied field above the coercive field, and the susceptibilities of both polarized and natural (nonpolarized) plates were Card 1/4 measured by In dry air (above H2SO4). No Some of the Electric Conduct-Lvllty of Guanidine Aluminum Sulfa~e He.,-.,ahydrate dehydration occurred. The reslstivlty changes in the course of oolartzation at 3 different fields (a-curves~ and the required time for the complete polarization at va-71ous fields, E, (b-curve), are 111ustrLated in Fig. 1. The measurements at vavious tempeuitures disclosed anomalou,,, (h-1.1gher) at the moment of polarization at- about 500 "1 except In the case of existence o" a residual oolariza~ion. In the vici- n1ty of 500 C the spontaneous polarization also 'takes place, an abrupt changre of ~,he piezoelectric effect 10, ratio see(Piig. 11). P, means re- and of the -r3 sistivity at, the moment of complete polarization of natural plates; 0 31 the of plates that have been polarized previously. It- is still not known whether the temperature interval of anoinalies is related to the temperature of i-rov:th, which in this case was 4oO-6orj C. Therce~' are b figures; and 4 references, 2 Soviet, 2 U.S., The U.S. references Card 2/4 are A. N. Holden, et aj., Phys. Rev., 98, 5406 (1955), Some of the Electric CondLICLI!flty Ch,-LP~M,- te-L.- tics 9 3 of Guanidine Alwiiinum L>'uifate llexaIlydt."Ite --,'0 V /~ T 0 - 4 - 5 - 15 /.30" and 102, 962 (1956). SUBMITTED: March 10, 1959 Card 3/4 Some of the Electric Conductivity Characteristics 75993 of Guanidine Aluminum Sulfate Hexahydrate SOV/70-4-5-15/36 P1. OM. C M 7 8 13 3- E. VIC rn 1000 501111 WON) 3 5 6 F~p Card 4/4 PC VIC rY7 3 ID 20 317 /,[1 F 7 &Lin - GUREVICH9 V.M.; ZHELUDEVt I.Se Seignettoeleotric properties of single crystals of triglycine sulfate in a frequency band from 0.01 to 50 cop.se Izve AN SM Ser. fiz. 1342-1346 N 160. (MIRA 13:3.2) 1. Institut kristallografii AN SM9 (Forroelectric substances) S/181/60 W18621/04/21/034 4.7 10 0 B002/?BM 3 AUTHORS: Gurevi2hj__V. Mj Rez, 1. S. TITLE: Transitional Processes of Conductivity"Fin BaTiO at Constant Current Ceramics PERIODICAL: Fizika tverdogo tela, 1960p Vol. 2, No. 4-2 pp 673-678 - TEXT: The resistivity of polycrystalline barium titanate 'through which a constant current passes was measured b~ means of an RPT tera-. .ohmmeter of the type 1001 and an (~ -57 F57) tera-ohmmater. The authors measured the'temperature dependence of a (;ig. 1), the transitional proces- ses occurring in volume- and surface conduction (Fig. 2), the field de- pendence of the transitional processesp (Fig. 3), and the transitional processes of conductivity in polarized and unpolarized barium titanate (Fig. 4). The transitional processes of conductivity have a ferroelectric nature. They may be used to study ferroelectric polarization, polarization energy, coercive fields, and to obtain new ferroeleGtric materials. The percentage of domains (13~9 to which the occurrence of residual polariza- tion in polarized material is ascribed, was calculated from the difference Card 1/2 0 Transitional Processes of Conductivity in S11 a 1 /601%21/04/21/034 BaTiO Ceramics at Constant Current B002/B063 3 between the electrical conductivity of polarized and unpolarized barium titanate. An effect of the transverse electric field upon conductivity was observed. It has apparently a ferroeleatric nature. The authors thank I. S. Zheludev and L. Z. Rusakov for their interest in this work. There are 4 figures and 4 references: 1 Soviet, 1 American, I German, and I Japanese. SUBMITTED: October 7, 1958 Card 2/2 & S/ 1 a 1J601002AW41034 B002/Bo63 AUTHORS: Gurevicho V. M.. Zheludev, I. S., Rez, I. S._ TITLE: The Problem of the Nature of Transitional Processes of Conductivity in Seignottoelectrics'kl PERIODICAL: Fizika tverdogo telaq 1960, Vol. 2p No. 4, pp. 691-696 T TEXT: In a preceding paper (Ref. 1), the authors at died the transitional A processes of conductivity in ceramic barium titanate and showed the Inter- relation between them and seignettoelectrio polarization. In the present paper, they attempt to clarify the nature and mechanism of transitional procenaes of conductivity by comparing the properties of polycrystalline barium titanate, single crystals of Rochelle salt, guanidine-aluminum- sulfate hexahydrate (GAS)and triglycine sulfate. A comparison between the curves drawn and those of polarity reversal in BaTiO and GAS (Figs. 3 and 4) shows the similarity of the two processes; th~ former, however, takes several minutes, and the latter only microseconds. The curves re- presenting the transitional processes of conductivity and the motion of the domain malls in a Rochelle salt single crystal are shown in Fig- 5. The curves are identical, and the relationship between the transitional Card 1/2 I 0 ~e 6~/ The Problem of the Nature of Transitional 3/181/6 0 04/24/034 Processes of Conductivity in Seignetto- B002/BO63 eleotrios processes of conductivity and the orientation of the domains ia thus con- firmed. However, this contradicts the observation made on triglycine sul- fate (Fig. 7). Mention is made of papers by A. F. Ioffe, Ye. V. Sinyakov, D. L Prokopalo, V. N. Lozovskiyq M. D. Mashkovich, and S. L Gorelik. The authors thank L. Z. Rusakov for interest in this work. There are 7 figares and 23 references: 15 Soviett 3 American, 3 British, I Japanese, and 1 Hungarian. SUBMITTED: February 26, 1959 Card 2/2 24.2130 AUTHORS: TITLE: PERIODICAL: ABSTRACT: Card 1/4 M14 SOV/70-5-1-23/30 Gurevich, V. M., Zheludev, I. S., Rez, I. S. Electric Cond-~.dtivity of Triglycinesulfate Single Crystals. Brief Communication. Kristallo$rafiya. 1960, Vol 5, Dir 1, pp 142- 145 (USSR) The electric conductivity of-triglycinesulfate, whose other properties have become well known because of numerous studies since 11056, was examined at 20-780 c and the dielectric constant determined on the basis of obtained data. The method is described in the authors' earlier paper (Ab3tract 75998). Direct current was applied (to 10 x 10 x 0.3, 10 x 10 x 0.5, and 10 x 10 x I mm plates, cut off normal to X) Y, Z axes of the crystals) at different steady- state tem eratures both below and above the Curie point (499 C). The plates normal to Y showed Electric Conductivity of Triglycinesulfate 78114 Single Crystals. Brief Communication. SOV/70-5-1-23/30 1) 2.4 microcoulomb per, cm -and 240 v/cm coevelve field at 240 C and 50 cycles. The plates normal to X and Z did not show hysteresis loops. The electric resistance 00, um cm of the plates normal to Y and the temperature dependence of conductivity& and dielectric conoUant C are- -1.11ustrated in Figs. 1 and 3, resDectively. ConductIvity vr, temperature curves for the plate,.- normal to X and Z show abrupt turns at 500 C (Just above the Curl(a point). The resistance of plates, does nat change lt~3 value with the duration of e,,,periment~; above the Curie point, and at any tem.- erature ulot-ic~ 'X- There. "LI-0 I-) 1.'Lgu.re~3 and 7 references; Soviet, I U.S. The U. S. vei'oi.,ence is: B. T. Matthias, C. E. P11.1ler, J. P. Remeika, Phys. Rev., lo4, 849, (1956). rectangular symmetric hyotercsI8 loops, Pa was SUBMITTED: July 11, 1959 C a r d 0" //4 Electric Conductivity of 781 1 L: Single Crystals. BrIef COMMUnIcation. SOV//70-5-1-23/30 0 1 2 3 4 5 6 7 8 9 r, mlAr,,rp-S plig. 1. Changing conductivity of the triglycine- sulfate plates normal to Y at various field strengths ~v/cm). (1)10.2; (2)200; M400; (4)800; (5)1,200.-, 6)2)too. Card 3/4 19 /0, i3 10' 14 10 j~l IL -L 23 30 J/ R 33 A 10' M14 ISJOV/70 -5-1-23/30 F-I.g. 3. The dependence of' lgc-v and E on I/f (T,degree absolute) of' triglycinesilfate plates normal to Y. (1) ig (5-V f (1/T), 6 2,400 v/CM. Card 4/4 no- 5/07o/60/005/005/011/017 E132/E36o AUTHORS: Gurevich, V.M. and Zheludev, I.S. N L TITLE: The Anisotropy of the El-qctrical ConductivitXf .\Single Crystals of Lit ium Sulphate, o 1 2 4 2 PERIODICAL: Kristallograflya, 1960, Vol. 5, No. 5, pp. 805 - W TEXT: The conductivity of single crystals of Li2so 4'H20 has been measured in fields of 0.5 to 12,000 V/cm in the range 15 to 80 0C in a dry atmosphere with pre--dried specimens. No loss of vater was detected. Measurements were made in the X, Y and Z crystallographic directions on specimens appropriately cut into cubes. The temperature dependence of conductivity was found to be s = s exp( -W / kT) where W , the dissociation energy, took 0 values WX = 1.25, Wy = 1.12 and W z = 1,04 eV for the corresponding axes. No deviation from Ohm's law was found for the temperature range studied. When the air was moist (60-70% humidity) the surface conductivity was 6-1.0 times greater than the volume conductivity. The anisotropy found is Card 1/3 5/07o/60/005/005/011/017 E132/s36o The Anisotropy of the Electrical Conductivity of Single Crystals of Lithium Sulphate. Li SO H 0 2 4* 2 in full conformity with the crystal symmetry. The microhardnep was measured by the Khrushchev-.Berkovich method as 17-55 kg/mm in the X direction, 48.90 in the Y and 26.4o in the Z . This correlation of hardness with conductivity (maximum hardness with maximum conductivity and vice versa) is the opposite of that usually found for metals. The electrical strength in all V/ directions is above 100 kV/cm. The effer;t of the spontaneous polarisation on the longitudinal conductivity couLd be observed; measuring along the pyroelectric axis (Y) the electrical conductivity in one direction was found to be 100/0' different from that in the other (e.g. resistivity = 12.00 + 0.011X 10' 10 ohm cm one way and [1.80 + 0.013X 10l) the other). This kind of measurement can onl3~ be made on pyroelectric crystals wh3.ch are not ferroelectric because in the latter case the spontaneous Card 2/3 The Anisotropy of the Electrical of Lithium Sulphate, Li2soV H20 S/07o/6o/oo5/005/011/017 E132/E36o Conductivity of Single Crystals polarisation will have its sign changed by the measuring field. Acknowledgments are expressed to I.V. Gavrilova and I.S. Rez. There are I figure and 5 references: 3 Soviet and 2 English. SUBMITTED.~ February 27, 1960 Card 3/3 ~7, Y36U 85012 S/048/60/024/010/021'033 B013/BO63 AUTHORS: Gurevich, V. 11. and Rez, I. S. TITLE: -Inve-stiga~tion oYfjthe P~ssibilit y f Regulating the Electri- cal Conductivitylof PiezoelectricKead Metaniobate by Introducing Slight Admixtures I/I PERIODICAL: Izvestiya Akademii nauk-SSSR. Seriya fi--icheskaya, 19060, Vol. 24, No. 10, pp. 1259-1260 TEXT: The author studied the possibility of regulating the electrical conductivity of PbNb206 by doping in much the same way as in the case of semiconductor alloys. The authors used particularly pure PbNb206 which had a Curie point of ---, 560 -* 5800C and showed no piezoelectricity. They studied the effect of L~+, K+, and La3+ in quantities of 0.01 -*- 0.4 atom% of the ion to be substituted. A Fig. shows the effect of !a3+ and Li+. K+ had no effect upon the electrical conductivity. It was found that PbNb206 samples synthesized from various materials exhibited a largely differing electrical conductivity. This is another proof of the fact that Card 1/2 Investigation of the Possibility of ~5)~4/60/02,t/010/021/033 Regulating the Electrical Conductivity of B013/BO63 Piezoelectric Lead Metaniobate by Introducing Slight Admixtures the electrical conductivity can be reL.,ulated by doping. The classification of the admixtures used indicated that the abGve-mentioned sample of PbNb 206 had a p-type conductivity. This was confirmed by preliminary determinations of the sign of the thermo-emf made on an undoped standard sample. The authors' recommendations were successfully used in Ref. 1 for piezoelectric substances which were synthesized on the basis of PbNb206 and had high Curie points. The authors thank R,. M. Lerman for specifying the conditions for the thermal traating o-f fhe subst es. The present paper was read at the Third - Conf-erence on Piezoelectricity, which took place in Moscow from January 25 to 30, 1960. There are I figure and 1 Soviet reference. Card 2/2 2 *0 0 (// ~(V" 6 r,2303,37o 2) AUTHORS: TITLE: PERIODICAL; 85874 8/048/60/024/011/010/036 BOo6/BO56 Gurevich, V. M. and Zheludev~ 1. S. The Ferroelectric Propertie_qij~of Triglycine Monocrystals in the Freqpency Range of 0.01 - 50 cps Izvestiya Akademii nauk SSSR. Seriya fizicheskaya, 1960s Vol. 24, No- 11, PP. 1342 - 1346 TEXT: The present paper is a reproduction of a lecture delivered on the 3rd Conference on Ferroelectricity, which took place in Moscow from January 25 to 30, 1960. In an earlier paper (Ref.1) the authors investi- gated triglycine sulfate (TGS) monocrystals at very low frequencies, es- pecially 0.01 cps, and found anomalous hysteresis loops. Now investiga- tions are being continued on an improved apparatus with photographic re- cording of the hysteresis loops, and the range was extended to 50 cps- It was possible to show that the anomalies may be observed. not only at very low frequencies, but in the entire range investigated. A block dia- gram of the experimental arrangement is shown in Fig.l. The arrangement differs from the usual types by the fact that an alternating sinusoidal Card 1/5 The Ferroelectric Properties of Triglycine 601024101110101036 Sulfate Monocrystals in the Frequency Range tBoM6/BBO5 of 0-01 - 50 CPS voltage had been applied to the sample and that an inertialess oscillo- scope was used as an indicator. The hysteresis loops (Pil,.2) confirmed the frequenoy and E-dependency of the coercive force of TGS crystals, which had already been found to exist in Ref-1. The quantitative oondi- tions may be seen from Fig.3. As the hysteresis loops become broader with Increasing voltage, this means that also the losses increase with E. Fig-4 shows this (tan 6 is shown as a function of E and temperature). Fig.6 shows the temperature dependence of E and the polarization PS at 106 cps~ of the latter measurements are compared with the values from Ref.6 (Curve 3). Fig.7 shows the influence exerted by frequency and field strength upon the shape of the hysteresis loops. The authors thank I. V. Gavrilova and M. F. Koldobskaya for the TGS crystals and I. S. Rel for discussions. There are 7 figures and 6 references: 3 Soviet and 3 US. ASSOCIATION: Institut kristallografii Akademii nauk SSSR (Institute of CrystalloRraDh.v of the Academy of Sciences USSR) 85874 S/048/60/024/011/010/036 B006/BO56 7 Fig.1 4 Legeind to Fig.l: 1) crystal, 2) thermostat (+0-010C), 3) low frequency genbrator of the type HPnIK-2 (NGPK-2), 4) r~-eostat, 5) standard X` capacitor, 6) el6etrometer-voltmeter, type )MY-3 (IMU-3), 7) d.c. oscil-~ los-cope of the type (ENO-1), 8) outer d.c. amplifier of the type' 'I1V','IP-2 (UIIP-2), 9) inner d.c. amplifier., Card IHM 3/046/60/02'4/oll/olo/?36 Boo6/BO56 4.1 .2 Fig JL_ -Card. 4/5-4- za 49 Pro. 6 Fig.6 Car~ 5/5 85874 S/048/60/024/011/010/036 Boo6/ 056 ac v I&V 4 ZOMO 0 w0 OT Soo go/ '10 Im E VZO f F19 - 7 Pue. 7 Figv-7 GUREVIGH, V.M.; ZHELUDEV, I.S. Anomalous conductance in the phase transition region and anisotropic conductance of triglycinefluoberyllate sing-le crystals. Kristallograftia 6 no.5:778-779 S-0 261q, (I'AIFA 14--10) (FluoberyUate--Electric properties) (Glycine) SMIY, A.G., redaktor;ST3TjdJTANTS, A.K., professor, redaktor: TIKHO- !41R()V, A.A., kandidat okonamicheakikh nauk, redaktor; VIDOGRADDY, V.N., redaktor; GHFMZHTJKOV. N.I., professor,rodaktor; SHCH3L'- KACHW, V.N., professor, redal-tor; CHARTGIN, M.M., professor, redaktor; DUNATLT, 1O.F., professor, redaktor; KUZKAK,Te.M., professor, redaktor; MOAVITIT, I.H. professor, redaktor; GURAVICH, V.M., redaktor; MURANOVA, V.H., redaktor. POIDSIBA, skiy redaktor. (Sixth scientific and technical conference. 19511 Sbestals nauchnn-tekbnlcheakata konferentolia, 1951. Moskva, Gos.nauchno tekhn.Izd-vo neftianoi i gorno-toplivnoi lit-ry, 1952, 214 p. (WaA 8:10) 1. Moscow. Moskovskly neftlanoy institut. Fauchnoye studencheakoye obahchestvo. (Petroleum geologr) SM-4WIY, A.G.. redaktor; TIELKIROV, A.A., kandidat ekonomicbeskikh nauk, redaktor: STIPANTANTS, A.K., professor, rodalctor: VINOGRADDY, VA. redaktor; CBEM-ZffUKOV, N.I., professor. redaktor: SHCHELIACHIff V.N.. professor, redaktor; CHARYGIN, N.M. professor, redaktor; KTJZffAK, Ye.M., professor, redaktor; KURAVITXV, I.M. professor, redaktor; GUREVICH, V.M., redaktor; KUATOVA, T.M., redaktor; TRDFIMOV, akiy redaktor. [Seventh scientific nnd technical conference, 19521 SedIm!iia nauchno-tekhnicheakata konferentsita, 1952. Moskva. Goa.wmchno tekhn.izd-vo neftianoi i gorno-toplivnot lit-ry. 1953. 171 P. (MLRA 8:10) 1. Moscow. Moakovakiy neftianoy institut. Nauchnoye etudencheaboys obshchestvo. (Petroleum Geology) ZHIGACH, K.F.. professor, redrktor; STEPANYABTS, A.K., professor, redak- tor; TIIGfOMIWV, A.A.. kandidat okemomichookikh nauk. rodaktor; KARAPMCAN, R. 0. . kandidat filosof tobeekikh muk, rodaktor-. CHXMZHMV, N.I., professor; TIRSHOV, P.R., rodaktor; G-UE-xFMH,. V.M redaktor; HURAVOTIff, I.M., professor, redaktor;-,SHCHRIKA- -ff,r, V.N., professor, redaktor; CHARYGIN, M.M..,pr'ofessor, redaktor; DUNATW, F.F.. nrefessor. rodaktor: KUZMA, Te.K., professor, redaktor; POWSINA, A.S., tekhnicheskiy redaktar. [Ninth scientific and technological conference of 1954]Devia- tat& rtauchno-takhnichookaia konforentaiia 1954. g. Moskva, Gos. nauchno-tekhn.izd-v* neftianot i gorno-toplivnol Ilt-ry. 1955. 205 p. [Microfilm] KRA 8:9) 1. Moscow. Moskovskly neftianoy institut. Nauchnoye studenchookeye obahchestvo. (Geology) (Petroleum) j \/I IV) I KUZMAK, Ye.M., prof. doktor tekhri. nauk, red.; TARAN , V.D.,prof.; dcktor tekhn. nauk, red.; ZHIGAOH, K.F., prof.,red.; KMAVIYIV, I.M., prof.,red.; TIKHOHrROY.A.A., kand. ekon. aaak, red.; TEGOROY, V.I., kand. ekon. nauk, red.; GRARYGIN, M.N., arof.. red.; WNATIT, F.F., prof., red.; CHERNOZHUKOV. N.I., prof., red.; CHM-ITY.I.A., prof.. red.; PANCHWOV. G.K.. prof.. red.; DAKHNOV, T.H.. prof.. NAMETKIN. N.B.. doktor khim. nauk. red.; ALMA OV. N.A.. dots.. VINOGRAMV. V.N., kand.tekhn. nauk. red.; BIRWKOV. V.I., kand. tekhn. nauk, red.; TAGITXV, X.I., red..-.-GJJW1GH.--.T.K! _red.; GORIKOVA. A.A., ved. red.; YEDOTOYA, I.G.. tekhn. red. [Proceedings of the conference of technical schools on the problems of new equipment for the petroleum industry] Nezhvuzovskoe soveshchante po voprosam novoi tekhniki v neftianoi promrshleanosti. 1958. materialy... Moskva, Goa. nauchno-tekhn. ird-vo neft. i gorno- toplivnoi lit-ry. vol. 3. [Manufacture of petroleum industry equipiqentl Neftianoe mashinostroonie. 1958. 222 p. (MERA 11:11) (Petroleum industry-Rquipment and supplies) v CHER OZHUKOV, N.J., prof., doktor tekhn.nauk, red.; ZHIGACH, X.F., prof, red.; HURAVIYEV, I.M., prof.,red.; TIKHOWIROV, A.A., kand.ekon. nauk. red.; YEGOROV, Vele, kand.ekon.nauk. red.; CHAMIN, K.M., prof., red.; DUNAYEV, F.F., prof., red.; KUZk&. Ye.K., prof., red.; CHARM, I.A., prof., red.; PANCHENKOV, G.M., prof., reds; DAMOV. V.N., prof., red.; WAMETKIN, N.S., doktor khim.nauk, red.; AIXUOV, N.A., dotsent. red.; VINOGRAWV, V.N., kand.takhn.nauk, red.; BIRYUKOV, V.I., kand.tekhn.nauk, red.; TAGITEV, B.I., red.; GURIVICH, V.K... red.; ZAKARAYETA, K.M., vedushchiy red.; WMIKA, B.A.-O-- ii~6:. red. (Petroleum refining; articles] Pererabotka nafti; materialy. Koskys, Gos.nBuchno-tekhn.1zd-ve no.ft. i gorno-topliTnoi lit-ry, Tel.2. 1958. 289 p. (KIBA 12:1) 1. Nezhvuzovskoye soveshchaniye -no voprosam novei tekhniki v neftyaney promyshlennosti, Moscow, 1956, 2. Moskovskiy neftyanoy institut (for" Chernozhnkov, Fanchenkov). (Petroleum--Refining) GIMNOZHUKOV. N.I,, prof., doktor tekhn.nauk, red.; ZHIGACH, K.F., prof., otvetstvenny7 red.; HURAVIYXV, I.M., prof., red.; TIMOKIROT, A.A., kand.okon.nauk,-red.; YWrOROV, Y.I.,.kand.ekon.nauk, red.; CHARYGIN. H.M., prof., reds; DURATEV, Y.Y., prof.. red.; KUZMAK, Yel.M.. prof., red.; CHARNYY, I.A.. prof., red.; PANOHENNOV, G.M., profi., red.; : DAKMOV, V.11., prof., red.; NAWTKIII, N.S., doktor khim.nauk, red.; ALHAZOV. N.A., dote.0 red.; YINOGRADOV, V.N., lmnd.tekhn.nauk, red.; BIRYUKOV, V.L. kand.t,ekhn.nauk, red.; TAGITXV, E.I.,red.; GURRVICH, Y.H., rod.; ZAMARAYEVA, K.H., vedushchiy red.; MUKHINA, ren- [Materials of the Interaniversity Conference on Problems of Nev Practices in the Petroleum Industry] Materialy mezhvuzovskogo sovoshchaniya po voprosam novoy tekhniki v neftyanoy promyeblen- nosti. Moskva, Goo. nauchno-tekhn. Izd-vo neft. I gorno-toplivnol lit-ry. Vol.2. [Petroleum refining] PererabotIm nefti. 1958. 289 p, (MIRA 11:6) 1. Mezhvuzovskoye soveshchaniye oo voprosam novoy tekhniki v neftyanoy promyshlonnosti. 1956. (Petroleum-Refining) ZHIGACH. X.F., z prof. red.; MURAY'Ylff. I.K., prof. doktor tekhn.nauk, red.; TIKHOMIROV. A.A.. kand.ekon.nauk. red*; YWOROV, V.I., kand.ekon. nauk. red.; CHARYGIN. M.M., prof.. red.; DURAYBY. F.F.. prof.. red.; GHWNOZRUKOV,'N.I.. prof.. red.; KUZMAK, Ye.Ma, prof.. red%; CURNY-Y, I.A., prof., red.% FANGHINKOV. G.M., prof.. red.1-DAKMOV, V.H., prof, doktor goologg-stuaralogicheakikh nauk. red.; NAMNIKIN, N.S., doktor khim.nank- red.1 AJXAZOV, N.A..,tiots., red.; VINGRADOT, V.N., kand.tekhn.nauk, red.; BIRYUKOV, V.I., kand.tekhn.nauk, red.; TAGIYEV.,B.I., red.;' 9 Me, red.; DC[BRYNINA. H.P., vedushchiy red,; MMINA, B.A.,'tekhn.red. (Proceedings of an interachool conference on problems of new techniques in the petrollum industry] Materialy )(ezhvuzovskogo saveshchaniya po voprosam novay tekbniki v neftyanoy promyshlennosti. Moskva. Goo. nauchno-tekha.izd-vo neft. i gorno-toplivaol lit-ry. Vo.l. CProspecting and exploitation of oil and gas fields] Razvedka i rasrabotka neftianykh i gazovykh meE;torozhdenit. 1958. 311 P- (MIRA 11:4) 1. MezhvuzovskvVe soveshchaniye po voprosam novqy tekhniki v neftyancW prozywhlannosti. (Petroleum engineering) (Gas, Natural--Geolog7) MGACH, K.F., prof., otv.red.; HURAVInW, I-K-, Frof., red.; TIXHOMIROY, A.A., ~cand.ekonom.naukj red.; VIROGRADOV, V.N., kand.teknn.nauk, rod.; SIDORMMO, N.V.. red.; BUNTS, A.D.. red.; CHARTGIN, M.N., prof., red.; DUNATEV, F.F., prof., red.; CHARNTY, I.A., prof., red.; CHERNOZHUKOV, N.I., prof., red.; KUZM, Te.M., prof., red.; DAMOV, Y.N.. prof., red.; PANCHINKOV,'G.M.. prof., red.; NAKSMIN, H.S., prof., red.; TAGIUV, E.I., prof., red.; BIRYUKOV, V.L. kand. tekhn.nauk, red.; TEGOROV, V.I., kand.teklin.nauk, red.; ALKAZOT, N.A., dotsent, red.;,.GURIVICH, V.M., red.; ISAYEVA, Y.V.. vedushchiy red.; PCLOSINA, A.S.,- ekhn.red. EDevelopment of the gas industry of the U.S.S.R.; from the pro- ceedings of the Interuniversity Scientific Conference on the Problems of the Ges Industry] Kezhvuzovsksia nauchnaia konferenteiia po voprosam gazovoi promyshlennosti. Razvitie gazovoi promyshlennosti SSSR; materiely. Moskva. Goa.nauchno-tekhn.i2d-vo neft. I gorno- toplivnoi lit-ry, 1960. 405 P. (MIRA 13:11) 1. Mezhvuzovskaya nauchnaya konferentsiya po, voprosam g820VOY pro- myshlennosti. 2. Glavgaz SSO (for Brents). 3. Moskovskiy institut neftekhimicheskoi i gazovoi promyshlennosti im. akad.Gubkina (for Charygin, Charnyy). Was Industry) GUILLVIGH, VJI.;;AEWDEV, I.S.; REZ, I.S. Characteristics of the electrical propertion of triglycine sulfate crystals in the subsonic frequency range. Kristallo- graftis 5 no-5:80?-805 S-0160. (KIRA 13:10) Olycine) GUREVIGII, V.14.; ZfU,LUDEV, I.S. Anisotrory of the electric conductivity of a lithium sulfate , 7j uY. Kristallograftia 5 no.5:805-806 single crystal " 2s04 S-0 160. (Him 13:10) (Lithium sulfate--Blectric properties) S/079/61/031/011/003/015 1)202/D.305 AUTHOM, Yurlyev~ Yu. K., Zefirov, N. S., and Gurevich, V. MI. TITLE: Investigation of the furan series XJX. The renction unsaturated hetones o f 2- vi nyl fu rans wi th c~ PERIODICAL: Zhurnal obshchey khimli, v. 31, no. 11, 1961, 3531-3534 MXT: In this work, the authors found that 2-vinyl furan reacts with 0C , P -unsaturated ketones which have a substituted methyl group, in the presence of traces of H 2s0 4 as a catalyst, according to the achemet RI I R-CH=C11-O ~O) + U112=G-L;vc 113 R-C11=C11-1 _C112-CII-COCII, \0/ (1) 1A R - R'-11: 10 R = C,11,, R'= 11; ID R = 11, It'= C113 Card 1/5 S/079/61/031/011/003/015 Investigation of... D202/D303 where R = H, or C 3HT , Rl = 11 o r CH3 Similar furan derivatives react in the same way; as these reactions proceed with tile formation of resinous sido-prodLICU, the yield Is low, but the method is considered an easy way of preparing furan ketones. Ketones sub.-3-Lituted with 2-fuiTl acetylene were not prepared. The ketones obtained react ivith maleic anhydride giving additional products. Hydration of the vinyl side chain of furan proceeds smoothly when palladium or BaSO 4 are used as a catal yst, and it is easy to obtain an additional product linked to the furan vinyl double bond. Preparation of the following compounds is given: 2-vinyl furan, by a previously knoim method. Reaction of viziyl furan irith thiophenol: a mixture of 4.2 g of thiophenol and 3.8 g of vinyl furan was left in a closed vessel for a few days; the product distilled in vacuo yielded 7.5 g of sulfide (92%); b.p. 146 - 14S 0C (6 mm); /0 nD20 1.5811; d420 1.0017; tiltD60.88,1 calcul. 60.22 C12 11 12 OS F- 5 fAbstracter's note; "F" probably means fraction 1-(a--vinyl furyl- ,,O)-butanone-3 (cpd. Ia). To a flask containing 0.2 g of hydroquinore, Card 2/5 S/0791/61 /031/011/003/m5 Investigation of- 1~2022/D305 14 g of methyl vinyl acetone and 2 dropF of cone. 11,S0 4' 1.1"' 9 of 0 2-vinyl furan was added (at 10 kg - .~.j cm/CM2; strength 0limit of static bending > 500 kg/cm ; Martens heat- Vi resistance > 200 C; electric strength 4 - 5 kv/mm; fluidity > 80 mm; are resistance at 10 ma 3 min. For the preping of parts of MFK-20 a specific pressure of 300 - 400 kg/cm is required; the time under the press is 30 See per 1 mm of thickness. An additional heat treatment at 150 - 160 C during 3 - 5 hours stabilizes the electric characteristics and raises the heat-resistance of the parts. A.O.M. Card 1/1 AUTHOR: Gurevic ' Z.,vEngineer BOV/122-58-12-22/32 TITLE: eat Resisting Enamel (Zharostoykiye Emali) PERIODICALs Vestnik Mashinostroyeniyal 1958,Nr 12, p 61 (USSR) ABSTRACT: Few organic heat-resisting, decorative enamels are available for continuous use at temperatures above 70 - 800C. An enamel designated FG-9, based on silica and organic lacquer with addition of aluminium powderg will give resistance and protection to metals at 400-4500C, but does not have decorative properties. Thus vitreous enamels are normally used, despite their rather low mechanical properties and poor adhesion to metals. A new, coloured, organic enamel has been produced which is based on the FG-9 lacquer in solution in toluol or xylol. Green enamels contain 5 to 10% of Cr021 and light green enamels 1 to 2% Cr02 and 4 to 9% T102* The enamel is applied to phosphated steel by ordinary spray techniques. Drying should be effected first for half to one hour at room temperature to evaporate solventq Card 1/2 and then the enamel should be stoved for 1 to 2 hours at 150 - 2000C. Although the enamel hardens in only Heat-Resist-ing Enamel SOV/122-58-12-22/32 six minutes at this temperature, f~~,dhesiveness is not exhibited until about a day af r pplication. % Tests show that colour is stable after repe~iied.exposure at 170 - 1800C and that the adhesiveness will withstand bend through 900 round a 15 mm radius, repeated five times. Card 2/2 TSMIN, M.I.; GURMCH, V.Z. Thermal-radiation dr7ing of car bodies. Avt.prem. no.2:3&-40 F '60. (MIRA 13:5) 1. Gortkovskiv avtozavod. (Automobiles--Painting) TSYRLIN, M.I.; , G-UREVIC H, V.Z.- Automation of thedrying of ooatings at the Gorkiy Automobile Plant. Mashinostroitel' noo5il9-20 M 161 (MIRA 14:5) (Gorkiy--Motor vehicles-Plinti;g) (Automation) UOUREVICH, V.Z., inzh. Reflector-type radiators. Veet. elektropron. 32 no.9:63-65 s 161. (MIRA 14:8) (Beat--Transmission) (Infrared rays) S/196/62/000/010/013/035 E073/E155 AUTMOR: Gurevich. V-Z- TITLE; Reflector type radiators PERIODICAL: Referativnyy zhurnal, Elektrotekhnika i energ*etika, no.10, 1962, 18, abstract 10 V118. (Vestn. elelttroprom-sti, no.9, 1961, 63-65) T,EXT: For heating most engineering materials low-temperature radiators with an operating temperature of about 400 OC can be used. The design is described of newly developed low-temperature infrared radiators with hermetic tubular electric heating elements. It is shown that for drying varnish coatings', paper, windings after impregnation, casting moulds and'cores, and in numerous other processes, such radiators have notable technical and economic advantages. The factors governing the temperature distribution along the radiator for various specific loads, and the intensity of the radiation heating as a function of the distance from the radiator, are given. 5 illustrations. ~Abstractor's note: Complete translation Card 1/1 GUREVICH, Vikto-r Zalman9yich; GUTTERMAN, K.D., red.; BULIDYATEV, N. A., tekhn.~ 'red. (Electrical infrared radiators] Elektricheskie infrakrasnye izluchateli. Moskva, Gosenergoizdat, 1963, 53 P. (Biblio- teka elektrotermista, no.15) (MIRA 16:10) (1,nfrared apparatus and appliances) GUREVICH,_Yik,tor, Zalm.an vich; DEMIDOV, Eikolay Alekseyevich; CHMOVA, V.G., inzh., retsenzent, I-MD-M. kand. tekhn. nauk, nauchn. red. Ag.SHIN,N.I,,inzh.,,y_ed.;ChTAS,M..A, red. [Electric heating installations of ships) Sudovye elektro- nagrevatellriye ustraistva. Leningrad, Sudostroenie, 1965. 243 P. (KTRA 18:8) NR& AM5027755 Monograph Alekseyevich Demidov, Nikolay Electric heating'units fbr -ships (Sudovyye elektronagrevatel'nyye ustroystva) Leningrad, 12;d-vo "Sudostrayeniy%" 1965. 243 p. illus., biblio. 2700 copies printed. ~q TOPIC TAGS: marine engineerin , ship component, heat, air heater,-heating engineer- ing, shipbjlding engineering PURPOSE AND COVERAGE: This book is intended for engineers and technicians in ship- yards and planning organizations, as well as for qualified workers and students in schools of higher education and tekhnikums. In the book, material on the design, technical characteristics, and manufacturing technology of the basic elements of shipboard electric heating units is presented in systematized and generalized ford Electric heating units using tubular heaters are described, and requirements per- taining to shipboard heating units are given, along with the fundamentals of elect ro thermy. Various types of shipla galley ranges, heating elements, ther sta oil and water heaters are also described. A method for making beat CiLlculations fi electric heaters is shown. The~author acknowledges the assistancd of engineers, V. 1. Zalyukshnya, V. P. Fedina, G. A. WyMhkin, B. A. Serov, and A. F. Denisov in compila-g-tKe b-o-oY. TABLE OF CONTENTS (abridged): Card 1/3 UDC: 629.12.02-83 ACC NNs AM5027755 Author's preface - 3 Ch. 1. Requirements for shipboard electric heating units Ch. II. Tubular electric heating elements -- 12 Ch. III. Manufacturing process for tubular electric heat~re 27 Ch. IV. Designing tubular electric heaters - 48 Ch. V. Materials used in ihipboard electric heating units, 82 Ch. VI. Electric galley ranges - 94 M VII. Electric heating units for heating compartments, equipment, and machinery - 135 Ch~:-,VIII. Heaters for liquids -'154 Ch. IX. Development prospects for shipboard electric beating equipment LOO Ch. X. Tubular heaters in shipbuilding and ship-machinery building 206