SCIENTIFIC ABSTRACT KARAGEBAKYAN, G.A. - KARAGIN, B.A.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000720520018-6
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: June 13, 2000
• Sequence Number: 18
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

TER-STEPANYAN, Georgii Is-ayevich, prof., doktor tekhn. nauk;
KARAGEBAKYAN, G~jk , otv. red.
(Engineering chain nomograms with rectilinear scales;
theory, calculation, and construction] Inzhenernye tsep-
nye nomogrammy s priamolineinymi shkalami; teoriia,
raschet, postroenie. Erevan, Izd-vo AN Arm.SSR, 1965.
271 p. (MIRA 18:12)

~ XARAGODY, Ro, skonamist
Imorove the procedure for entering deductions from profits in the
budget. Fin. SSSR 19 no- 7:60-64 Jl '58. (MIRA 11:8)
1. Upravlentya rybnoy prowyehlonnosti sovnarkhoza AzerSSR.
(Amerbaijan-Budget)

KARAGFDOV, R. (Yerevan)
-
Increasing the stimu3ating role of profit in industry. Vop. ekon.
no.8!64-75 Ag 163. (KRA 16:9)
(profit)

MOVSIEPSYAN, lur--iy P~Gp vl'v~
[Ecan-)mic- afft..-~.Ienc-y of automation in Uz chemi,-.Ell
industries-. me-rhods and pracUce In detcrmii)ii~gj
Ekanomlche.;kaia effektivnosO av+omv-LJ.za!.qll
skikb proizvc;-dqt,-7,. motcdy A prak"Ala
Erevan, *lzd-.-vn AN ArmMRp 1963,, 17-.'~
vitAia'nnr3dn,:igo khoziaistva Arrr~anekcf SS

KARAGEDOVY R.G.
Coal pripes and business accounting. Izv. Sib. otd. AN SSSR
no.62111-114 262 (MIRA 1717)

ISMAILDV,,, R.G.; KCMYRV,, M.I. I -A4444P?~".T.
Combined operation of the reforming of ligroine with the light
cracking of fuel oils in a double-chamber furnace of thermal
cracking proosones. Khin.i tekh.toplA masel 7 n0.40-5 Ap
162. (MMA 154)
1. Sovet.narodr~ogo khoxytystya Azarbaydahanskoy SSR.
(Baku--Cracking process) (Ligroine) (Gasoline)

XARAGBMGIY-ALXALAYEVo P.M.
W"Mw
Negative pho. 8 1ric affect in semiconductors. rzv. AN uz. So.
Ser.fiz,-matenauk no.6tl3-26 158- (MM 12:2)
1. Fiziko-tekhnicheekly inatitut AN UzSSR.
(Semiconductors) (Photoelectricity)

240) SOV/166-59-6-8/11
AUTHORSt Leyderman, A.Yu., Karageorgiy-Alkalayev, P.'K
` "1-1 With an Impurity
TITLE: On the Application of a sem,66fiaub
Level for the Explanat on of the Effects of Cancellation of
the Photoconductivity*~and of the Photoactivation
PERIODICAL: Izvestiya Akademii nauk Uzbekskoy SSR, Seriya fiziko-materaa-
ticheskikh nauk, 1959, Nr 6, pp 60 - 71 (USSR)
ABSTRACT: With the aid of a semiconductor scheme with an impurity level
the authors try to give a qualitative explanation for the
cancellation of the photoconductivity and the photoactivation.
They conjecture that the cancellation is an appearance iden-
tical to the negative photoelectric effect. The consideration
is essentially carried out with the aid of the investigations
of A.D. Shneyder Z_Ref 1,2_7 -
The-re-FT-66-71-g-ures, and 9 references, 4 of which are Soviet,
and 5 American.
ASSOCIATION: Fiziko tekhnicheski institut AN Uz SSR (Physico-Technical ,z
Institute AS Uz SS
SUBMITTED: January 23, 1959
Card 1/1

83891
3Y, // VI) S/166/60/000/004/006/008
C111/C222
1410
AUTHORSv Aronov, D.A*~ and,Karageorgiz-Alkal LYGVI P.M.,
TITLEt On the Theory of the Inverse Volt-Ampere OharacteriBtiC Of
-Semiconductor DiodesO
PERIODICALs Izvestiya Akademii nauk Uzbekskoy SSR. Seriya, fiziko-
matematicheskikh nauk, 1960, RO-4,PP- 75-88
TEXTs The authors obtain an expression for the volt-ampere characteristic
of a diode with a crass p-n junction and a finite thickness of a region
of diodes. In presence of-an anti-depletion layer at the contact with
the metal there holds a saturation of the back current. The strength of
the saturation currents is small. Therefore the authors recom nd a
use of contacts w1th anti-depletion layers. In the case of good ohmic
contacts and contacts with depletion layer the back current in the
region of saturation increases with the voltage as
(wl-x + 1 G)-1,
1 Al
where w2 is the right boundary of the quasineutral n-region, x, is the
width of the volume charge in the electronic semiconductor and 0 is a
Card 1/2

83891
S/16 60/000/004/006/008
C1 1 1YC222
On the Theory of the Inverse Volt-Ampere Characteristic if Semiconductor
Diodes
constant. It is state& that such an increase is in no connection with
the generation of carriers in the region of the volume charge. For
voltages for which the volume charge is extended up to the contact, the
back current changes in dependence on the voltage in agreement with the
model of the "chemical" depletion layer (Ref.13)- It is shown that in the
case of thin diodes the differential resistance has a maximum. The
situation of the maximum depends weakly on the temperature. A comparison
with the experiment (Ref.6) showed a good agreement. The authors mention
K.B.Topygo E.I.Rashba and A.I.Gubanov. There are 3 figures and
16 referencess 12 Sovietq 3 English, 1 American and 2 German,
ASSOCIATIONs Fiziko-.tekhn--cheskiy institut AN Uz SSR (1~hysical-Technical
Institute of the Academy of Sciences Uzbekskaya SSR)
SUBMITTEDs May 5, 1960
Card 2/2

87,16
416o (3.xol) 100.3j //-37)
S/166/60/000/005/003/008
430 0 ~32e_') , 16111.'? C111/0222
AUTHORt Karageorgiy-Alkalayev, P.M.
TITLE: The Negative PFo_V6-e1Vutrtu-fffect on the Minority Carriers in
the p-n Junction
PERIODICAL: Izvestiya Akademii nauk Uzbekskoy SSR, Seriya fiziko-
matematicheskikh nauk, 1960, No.5, PP-35-47
TEXT: The paper is written under the leading of Professor G.M.Avaklyants.
By investigating the system of.equations given in (Ref.13) which describes
the state of the n-region of a p-n-junction, the author states: For
return currents by a p-n-junction a negative photoelectric effect can be
reached at the expense of a concentration lowering of the minority
carriers by an action of light, A necessary assumption for the appearance
of the negative photoelectric effect is that the photo-sensitive region
in small compared with the length of diffusion of the minority carriers.
If the volume charge in this photo-seneitive region is sufficiently broad
then for voltages being greater than a certain critical one, a negative
photoelectric effect is considered. If, however, the region of the volume
charge is narrow then the negative photoelectric effect appears for
voltages being smaller than the critical one. The negative photoelectric
bard 1/2

87-, 16
S/166/60/000/005/003/008
C111/C222
The.Negative Photoelectric Effect on the Minority Carriers in the p-n
Junction
effect as well as its critical voltage are dependent on the temperature.
If the critical voltage equals zero then there must exist a photo-
electromotive force and a short-circuit current with anomalous signs.
The described negative photoelectric effect has the characteristic
property that it may appear if in the depth of the semiconductor (in
consequence of an essential concentration growth of the majority carriers
by an action of light) the photoelectric effect is positive.
There is 1 figure and 14 references: 11 Soviet, 2 American and 1 German.
[&bstractWs notet Ref.13) concerns K.B,TolDv o and I.G.Zaalavskaya,
Zh- TF, 1955, XXV, ~i
ASSOCIATION: Fiziko-tekhnicheskiy institut AN UzSSR (Physical-Technical
Institute of the Academy of Sciences Uzbekskaya SSR)
SUBMITTED: January 219 1960
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.22971
S11661611000100210021COr
B112/B217
AUTHOR: Kara eorgiy-Alkalayev, P. M....
TITLE: Eff eat of. "deep!' impurities on the volt-ampere oharao -1--tic
of semioo.nductor diodes
Pr RIODICAL: Izve3tiya Akademii nauk UzSSR. Sepiya fiziko-ratenatichoskikh
nauk, no. 21 loo61, 12-28
TEXT:. The au,thor studie's-the influence of "deep" donor- and uccepto-type
impurities,on the volt-ampere characteristic of a semiconductbor,- the
band scheme of which is shown in Fig. 2. The syster. of the equations for
the conservation of carriers has the folloving form in the steady case:
a nl,-:Pln(Nl n n n n .. + a Pnp.. dj /dx,
1 1 + 72(N2 2) - 62'2 n
P 1n (N 1 -n1) a1ni *+ ii(Ni - n1) - 6 1nl'p - 0,
P2p(N2 - n2) a2n2 +-1 (N2 - n2).- 62n2n - 0.
The author obtains t.he following volt-ampere' characteristic:
qard.1/6

22971
S/166J61/000/002/002/006
Effect of "deep" impurities on'the..'.' B112/B217
r th
Px OP )2+ X1 r,( w"w# r,+s, +
LP
&P X, +
r. + r. + S,
+ ,, 7, + S,
W- a, da) th wp-xl +
S; I IT
Lp r.
x'
V. OP +X, I 7Ttudu] +
TP- I + + s, -r e
TO ,p P
X2 bpi
+ -
Ell IV
+ nP ky
-.%' 9r e
1.4- L 1"M Ed. du,").(
kT _-X
Card 2/-6

.22971
S/166~61/000/002/002/06
Ef f ect of "deep" impurities on the. . B 11.2/ B217
Here, t~ denotes"the lifetime.of minority carriers, ~ p ratio of the life-
time of minority carriers in the quasi-neutral regiop to the lifetime-of-
minority carriers in the region of spAce charge, and skeffectiv.0 Surface
p
Acombination rate. The author obtains the foll6wing expressions for 71
and X2 aNPIBPI V_ Vx
XI_ ~-eNml B. QVIO B,, + NIP Bp (17)
X. tNxI B. J.v - V. 1 (18)
2-eNII B,, (NI4 B. + NIF Bp
ahere V denotes the contact potential of the p-n junction:
k 2
n i
v -hZ ln
k e r in n lip -(."qp
(N
L 1 2 1 PI
Card 3/6

22971
S11661611000100210021006
Effect of "deep" impurities on the... B112/3217
The author discusses in detail the volt-ampere characteristics obtained
'for the semiconductor, and compares his results with those of other
authors, especially A. I. Gubanov, I. Kh. Geller, P. V. Sharavskiy, and
T. iozyrev. Fig. 3 shows the influence of 'Iddep" impurities on the
volt-am?ere characteristio. Prof6asor 0. M. ~vaklyants is mentioned.
There are 3 figures and 25 references: 11 Soviet-bloc'and 12 non-Soviet-
bloc. The most important referencesto English-language publications read
as follows: Shockley W.,'R;ad W., Phys. Rev., 87, 835, 1952. Sah C. T.,
Noyce R., Sbockley W., Proo. IRE, 45, 1228, 1957.
ASSOCIATION: Fiziko-tekhniches%iy institut AN UzSSR (Institute of Physics
and Technology, Academy o-f Sciences Uzbe'lskalya SSR)
SUB114TT 20, V160
TED: N
Card 4/6

S129056
166/61/000/005/002/004
4t, 96 00 3 7/ B125/B102
AUTHORS: Karageorgii-Alkalayev, P. L.1., Leyderman, A. Yu.
TITLE: Contribution to the theory of negative Dhotodiode effect
PERIODICAL; Akademiya nauk Uzbekskoy SSR. Izvestiya. Seriya fiziko-
matematicheskikh nauk, no. 1961, 68 - 77
TEXT: 7"he authors have investigated a sharp p-n junction, the n-region
of which is bounded by a contact with a metal. In addition to strongly
ionized impurities, the p- and n-reeions contain "deep" impurities. If
light is allowed to act only on the deep impurity levels, the system
d
4-
jLA ~1~~Q,
P,n (N, - nJ - -.n. + -t. (,V1 - it,) - &,n.p = o, (2)
Ap (Alj Q CE242 + Tt VV2 62n2n + A (lVl n2) Cn3 0, (3)
Card 1/7,
...............
Q:Po
gp~
M
M~
WIN Al PP;
1111" PROIR11-

29056 S/166 61/000/005/002/004
Contribution to the theory... B125 B102
dE 4ffe
dx 1P - n + VVI - nO ((V2) (4)
dn eE
iiT n i-T
dp iE_ j /a (6)
,aT P R T P P
describes the behavior-of semiconductor carriers, and therefrom one finds
the hole concentration on the deep impurity levels. Low concentrations
of free carriers in the region of volume charge are given by the Poisson
equation dE 4we B.
ldx - 9 N, M
B.=I + N21N, +
I+ f6B+ ekr
with
Card 2A

Contribution to the theory...
29056 S/166/61/000/005/002/004
B125/B102
a-2a, 9 _9
PIB+ TV I
A U f C ~ WNIIAII
+ ( b 7 - )Vic (9)
+ p2B+ 3-23t 32B :~._1.9. A+C 3-3,
e kT + ~6 + e kT +_ _e &T
4B_ B,B-
for deep donor-type impurities and wiih
B. = I N21N,
I+ t,B-
Cis!=-e- k' -A k T NIV,
P2B+ * ) PIB+ (10)
.9-23.)(1 + 810 _ 2=!:!! A+ C
b'B- - i__ _ e
T kT + e
P2B+ +
for deep acceptor-type impurities. A quasineutral region is assumed to
exist for the recombination coefficients a) a2> 02P> Y2 I a2 > b 2n and
b) b 2n >a2> P2P~'Y,* The lifetime of the minority carriers is greater if
Card A
6

(i/166/61/000/005/002/004
Contribution to the theory... 29056 ~125/B102
the deep impurities are illuminated than it is in the case of darkness.
The boundary condition valid on the contact is given. The n-region is
assumed to be about as large as, or smaller than, the diffusion length of
"lie minority carriers and the dimensions of the p-region are assumed to be
much larger than the diffusion length. Then, the total current passing
through the p-n-junction is practically __e_pp,~_to the hole current.
V
X, (20)
e
w - AO, + exp kr Edx) du
is valid for w