SCIENTIFIC ABSTRACT KHAIMOV, Z.S. - KHAIN, V.YA.
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CIA-RDP86-00513R000721710003-0
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RIF
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S
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100
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November 2, 2016
Document Release Date:
September 17, 2001
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3
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Publication Date:
December 31, 1967
Content Type:
SCIENTIFIC ABSTRACT
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On Use of Portable P~raaida for S/00 60/000/'C-_-, -4/1-i24
Points of Second- and Third-order Triangulation B007YB123
truck of the type ZIS-5. Angular measurements made from the:3r,
pyramids in 1959 proved to be as exact as observations made from
signals. The best observers are mentionedt Comrade V. N. Sudarikov and
V. D. Madakalov. The pyramidg described here are far more useful than
simple signals. This fact is illustrated by a calculation of savings.
At the same time the necessary modifications of the construction of those
outer pyramids are pointed out, and a few recommendations are given.
There are 3 figures and 1 table.
Card 2/1,
KRAIMDV, Z.S., assistent
Analysis of triangulation data by methods of mathematical
statistics. Izv. vys. ucheb. zav.; geod. i aerof. no.3:
37-52 '63. (MRA 17:1)
1. Moskovskiy institut inzhenerov geodezii, aerdfotos"yemki i
kartografii.
(Y) ( -V- T F Ft -)-E
USSR / Mechanical Properties of Crystals and Polycrystallic E-9
Compounds.
Ab5 Jour Ref Zhur - Fizika, No 4, 1957, No 94og
Author Aleksandrov, K.S., Khaimoy-Mallkov, V,Ya.
"I
Inst Institute of Cryat&Uo-g-r-aTEv-,-Xc-aU~.my~of Sciences USSR
Title Rotation of Plane of Polarization of Elastic Shear Waves
Orig Pub : Kristallografiya, 1956, 1, No 3P 373-374
Abstract : In a crystal specimen of rock salt, appro)d tely 100 mm long,
cut in the E110] direction and twisted about this direction
by 90P, there was sent a short t1trasonic pulse of shear wa-
ves at a frequency of 1.67 Mc. The receiver of a Y-section
from the other end of the specimen received the ultrasonic
vibrations passing through the crystal, which after amplifi-
cation were applied to the plates of an oscillograph. It
was shown that the twisted crystal of rock salt rotates the
plane of oscillations of the particles '-n the shear wave
(plane of polarization) by an angle that equals approidma-
Card 1/2
USSR / Mechanical Properties of Crystals and Polycrystalic E-9
Compounds.
Abs Jour : Ref Zhur - Fizika, No 4, 1957, No 94o9
Abstract : tely the angle of twist of the specimen. This phenomenon
was observed only for those directions of propagation twist
axis), where there is a difference in the velocities of the
two shear waves and where the directions of their displace-
ment are fixed. Similar investigations with rock-salt crys-
tals, beaten out along the cleavages, did not produce the
above effect.
Card 2/2
19 11)12 elab v, - ";~) // /' /~, e* ~/ 1"" ~ w I
AKULRNDr, Ye.M.; BAGDASAROV, Kh.S.; KHAIMOV-RALIKOV. Y.Yr-, _
Effect of mechanical stirring and ultrasonic vibrAtions on the
. -1 process of adsorption of Impurities by monocrystmir. Kristpllo-
graftia 2 n0-1:197-199 '57. . (MW 1(1:7)
1. Institut kristallografti Akademii nauk SSSR.
(Grystmls--Growth)
V,
USSR/Physical Chemistry - Crystals. B-,';
Abs Jour : Referat Zhur - Khimiya, No 1, 1958, 272
Author : Kh.S. Bagdasarov, V.Ya. Khaimov-Mal'kov.
Inst e-
Title Some Experimental Data ConcerninG Formation Natwe of
Etching Figures in Ultrasonic Field.
Orig Pub Kristallografiya, ?Qj7, 2, No 2, 309-3010
Abstract Whiel studying the ca ..'0.
. A,.e formation of etching fi-
gures on the NaCl cr~ ur.ace during ultrasonic irra-
diation, the authors ~-.,& .,rAi a sharp drop of the tensil
strength of NaCl crystals in solution (aic!) at an ultra-
sonic irradiation of the frequency of 22 kilocycles, and
the absence of this effect, if the frequency had been
717 kilocycles. Both these phenomena are explained by
the formation of microfissures, called cavitation, on
the crystal surface, which serve as "germs" of etching
fi,-ures.
Card 1/1
AUTHOR: Khaimov-!jal'kov V.Ya. SOV/-/0-3-4-14/'26
-------------
TITIE: On the Question of the Growth of Crystals in Porous Media
(K Yoprosu o roste kristalloy v poristykh sredakh)
PERIODICAL: Kristallogafiya, 1958, Vol 3, Nr 47 pp 488-493 (USSR)
ABSTRACT: The growth of crystals in porous media is of,,ary great
practical importance in, for example, the freezing of
soil, the formation of gypsum in clay, the setting of
cement, etc. The crystallisation pressure for growth from
solution is given by:
V = kT v__l log t/Co
andft,om a melt by:
-W = dT Q/ToV
where Q is the heat of or7stallisation, T 0 is the
melting point, dT is the super-cooling, CIC 0 is the
supersaturation, v is the specific volume. These
derive from Thomson's expression. Experiments were
Cardl/3 carried out in silica gel where the pore size is about
SOV/70-3-4-14/26
On the Question of the Growth of Crystals in Porous Media
4. 10-7 c. Chrome alum arlstals were grown in the gel and
exainination showed that the crystals do not ac*,6,ually
penetrate the gel; secondly, that the crystal13 push the
gel away, straining it and sometimes producing cracks and,
thirdly, that these cracks indicate the maximum strains
to occur at the points of the crystals. Pyramidal forms
of the crystals tend to predominate. Na--! crystals growing
on the surface of a gel were also examinett. Thej appeared
to be columnar with piles of platy crystals growing
mushroomwise on their tops. The crystallisation pressure
was measured. It is concluded that the growth of crystals
in a porous medium is satisfactorily explained by the
formulae quoted.
Acknowledgments to Academician A.V. Shubnikov, N.N.Sheftall
Oard 2/3
SOMO-3-4-14,126
On the Question of the Growth of Crystals in Porous Media.
and to A.A. Chernov.
There are 14 figures and 10 references, 8 of which are
Soviet and 2 German.
ASSOCIATION: Institut kristallografii AN SSSR
(Institute of Crystallography of the Ac.Sc.USSR)
SUBMITTED: April 25, 1958
Card 3/3
)a 'ALIF , V.ya., Cand Phys Math SCi -- (diSs) "Study , . I
KRAII,J011-11, OV 4-0, - Ij
\! iid- _- ' - - - ---i-
of crystallization pressure. (pressure of tine crystal,#,
the phenonenon of self-purifying)-" mos, 19593 12" ',)P Unst
of Crystallography c;f Acad Sci USSR). 150 cO.'es
(KL 35-593 112)
- 11 -
14
0- , 73o 0
I r; I ~ ,I
J _0 -
3/058/62/001)/005/069/119
A061/A101
AUTHOR: Khaimov-Mallkov,_V. Ya.
TITIZ: A contribution to the thermodynamics of crystallization pressure
PERIODICAL: fleferativnyy zhurnal, Fizika, no. 5, 1962, 10, abstract 5E83 (V ob.
"Rost kristallov. T. 2", Mosoow, AN SSSR, 1959, 5 - 16)
=T-. Conclusions from and an evaluation of the thermodynamic conditions
of phase transition accompanied by the repulsion of foreign particles due to crys-
tallization pressure are presented. A thermodynamic analysis of phase-transfor-
mation has been made on models to which single-phase preszure has been appli.~d ad-
ditionally. Prom the conditions of equilibrium in sIngle-component sy6tems it iz
concluded that crystallizatiori pressure must rise with the degree of' supercooling,
practically regardless of the symbol of the repelling crystal face. Under othar-
wise equal conditions, crystals subjected to elastic stresses displev a melting
temperature lower thLn that of unstressed crystals. However, the change of this
temperature is independent of the sign of elastic deformation. In dilute solu-
tions, crystallization pressure is independent of the properties of both the sol-
Card 1VP
A contribution to the ...
S/058/6Z/O()0/005/06.9/119
A061/A101
vent and the substance. Crystallization pressure rises with supersaturation. It
provides an explanation of the repulsion of foreign particles from the faces of
a growing single crystal.
A. M-akarevich
[Abstracter's note: Complete translation]
III
Card 2/2
S/058/6P/000/009/017/009
A006/A101
AUTHOR: Khaimov-Mallkov, V. Ya.
TITM: On the problem of experimentally determining the magnitude of
crystallization pressure
PEMODICAL.- Referativnyy zhurnal, Fizika, no. 9, 1962, 8, abstract SE59
(In collection: "Host'kris.tallov. T. 2", Moscow, AN S~ZR, 1959,
17 - 25) Coe
TEXT: The author reproduced experiments to determine crystallization
pressure with the aid of various methods, for the purpose of discovering the
causes of sharp discrepancies in experimental results obtained preViousiy. The
conclusion is drawn that experiments made by the Correi..; method (G. Correns,
W. Stbinborn, '1Z. Kristallogr.11, 1939, v. A101, 117) yield correct results,in
respect to the order of magnitude. The magnitude of crystallization pre5sure
can not be evaluated from the capture or repulsion of obstacles by growing crys-
tals,since in these phenomena conditions of crystal,feed play the decisive
part. -
(Abstracter's notel Complete translation] Yu. Krishtal
Card 1/1
SQ170-4-1-20126
AtTHOR: Khaiqqy7Mq1'.koY.-.V..,'Ta.
TITLE: On the Question of the Growth of Crystals From Systems
Containing Impurities (K voprosu o roste kristallov iz
sistem7 soderzhashchikh primesi)
PERIODICAL: Kristallografiya, 1959, Vol 4, Nr 1, pp 114 - 118 (USSR)
ABSTRACT. It is shown experimentally and theoretically that the
action of impurities on the change of crystallisation
parameters can lead to the operation of a single-phase
(crystallisation) pressure equal in magnitude to the
osmotic pressure which these impurities set up.
According to Raoult's law, the change in boillng or
melting point of a solution containing impurities is
given by:
16T ~ kT 2(C I -CII )/q
0
For the growth of crystals it can be put into the form:
~e4T =-kT2(C I - CII )/q
i
where-
Cardl/4
SOV/70-4-1-20/26
On the question of the Grovith of Crystals From Systems Containing
Impurities
CTI is the concentraticn of impurities in the i-th
I growth pyramid;
q is the heat of crystallisation;
,A~T is the change in the melting point;
T is the melting point of the solvent,
k is Boltzmann's constant and
01 and 0 11 are the concentrations of imDuritir in the
liquid and solid phases.
The crystallisation of alum in the presence of a blue dye
(Col.Ind. ql-8) has been studied. Octahedral growth pyramids
contain almost no impurities and remain transparent while
the cube-fa!,p pyramids have substantially the same
concentration of dye as the solution. A pressure can be
defined by kT
(C VII
Card2/4
SOV/70-4-1-20/26
On the Question of the Growth of Crystals From Systems Containing
Impurities
for an osmotic pressure across a partition whefe vii
is the molecular volume of the pure solvent. If there
is a pure solvent on one side then:
CkT/v
By a thermo-dynamic argument:
AP - kT(OI - CII)/(vi - vIi
which is to be compared with Raoult's law. This was
experimentally verified by measuring the rate of growth
of alq crystals at various temperatures (from 1?.?5 -
18.55 0). The osmotic pressure of the dye was actually
measured by the pressure exerted on a mirror of a Michaelson
interferometer which caused a slight displacement of the
mirror, It is concluded that the p:ressure should be con-
sidered as real. AcknowledgmentG are made to Academician
A.V. Shubnikov and Doctor N.N. Sheftall for their advice
and to A.A. Fotchenkov and Kh.S. Bagdasarov for their help
Card3/4 in experiments.
SOV/70-4-1-20/26
.0n ~he Question of the Growth of Crystals From Systems Containing
Impurities
There are two tables and 6 Soviet references.
ASSOCIATION: Institut kristallografii AN SSSR (Instit--,te of
Crystallography of the Ac.Sc.. USSR)
SUBMITTED. October 13, 1-958
Card 4/4
'-)4.7100
771-15
sov/~(O-4-6-16/3i
AUTHORS: Perl'shteyn, V. A.
TITLE: c)ncerning the Effect of yarnace Temperature Gradient
ot, the Distribution of an Impurity In a Growing
Crystal
PERIODICAL: Kristallografiya, 1959, Vol 4, Nr 6, pp 9011-907
(USSR)
ABSTRACT: This work was presented at the second conference on
scintillators in 1957, at Kharlicov. If a molten
cylindrical sam 1e is cooled at one end (directed
crystallization5, a divisive effect is possible
leading to the concentration of the impurity at one
or the other end. The concentration CS of the
impurity along a length Zo of the crystal may be
represented by Eq. (1) If the migration is by con--
vection and by hq. (2) If by diffusion.
Card 1/8
Concerning the Effect of Furnace Temperature 77115
'Gradient on the Distribution of an Impurity sov/70-4-6-16/31
in a Growing Crystal
Z,
C. kc"( 7;
C,=Xt Coll +or[jrr-(t-2k)oxpj-1jk(1-k)-Jx
x (1 +orf 1(i -2k) (2)
Here Co is the initial concentration of.the impurity;
k is the coefficient of trapping, equal to CB/Cz
0
(CZ 0being the concentration of the impurity at
point Z.); L. is the crystal's length; -C - VZOAD;
V is the rate of crystallizationi and D lo the dif-
fusion coefficient. Figuro I represents the above
rela'tions for k