SCIENTIFIC ABSTRACT KHLUDKOV, S. S. - KHLYBOV, B. M.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000722110007-1
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: September 17, 2001
• Sequence Number: 7
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

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89695
J
S/139/61/000/001/003/018
Methods of Obtaining p- ii Junctions E036/E435
potassium ow 90 V, Li 30 V, As ~ 20 V. These differences
cannot be,explained by-,differences in the initial resintivitiei'l
of the germanium. The'growth of current is attributed to:
1. tunnelling by a Zenek mechanism; 2. impact ionization of atoms
within the junction by -the current carriers in the strong electric
fields of the Junctions;, In di odes prepared from material of
greater than 0.5SI cm the current growth is by impact ionization.
Tfie differing critical yoltages are due to the differing depths; of
the energy levels associated with the impurity atoms. This dopth
determines the field at~,which ionization occurs. The dynamic
characteristics of diffused Go diodes and alloyed Si diodes are,
shown in Fig.4; the stAitic characteristics are plotted in Fig,,5,
I mA cm-2 vs V in volts. Ga-As diodes of the p-type have :
characteristics resemblAng those plotted in Fig.4. The method of
producing alloyed Si diodes is not detailed, reference being ma,de
to work by M.P.YakubenyAk (Ref-3) where the wetting propertiesof
titanitun alloyed with Aj~, Ni, Cu etc ( the "active phase") are
discussed. In earlier~;work of the author (Ref.1) this system had
been applied to Si and the nature of the bond between Si, the
active phase and the Ti~was investigated.- The system has
Card 5/8

89695
S/139/61/000/001/003/018~
Methods of Obtaining P-mi Junctions 9036/E435
rectifying properties 'the Ti apparently behaving as an accepto r.
There are 5 figures and;3 Soviet references.
ASSOCIATION: Sibirskiy fiziko-tekhnicheskiy institut pri Tomakom
gosuniversitete imeni V.V.Kuybysheva (Siberian
~Physicotechmical Institute of Tomsk State University
imeni V,V.K~ybyshev)
SUBMITTED., September 2!2, 1959 (initially)
June 20, 1960 (after revision)
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Investigation of the kib.;etic characteristics of highly doped ndiu.
antimonide. V. A. Kokoshkin (10 minutes).
Synthesis, doping, and p reparation of single crystals of gallium arsenU a.
A. P. Izergin, A. G. Orizorlyevao V. N. Chernigovskayao G. 8. Ikonnikova.
Crystallization of gallt 6m arsenide under different pressures of arsehic:
vapor. S. S. Khlubkov, V. A. Celivanovap G. M. Ikonnikova-
Influence of impur ities on the electrical properties of gallium arsenide.
M. A. Krivov, Ye. V. Malisova, C. V. Malyanov.
(Presentad by M. A. Krivpv--l.5 minutes).
Report presented at the 3rdifttional Conference on Somiconductor Conn
bounds,
KisUnov, 16-21 Sept 1963 i

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ARTj'U40NOVY KOIO; LEBEDDr, Nelo; TE11GALIIEV, E*Ye*; LESBICHN09 A.K.;
YAKUSHINp M.Ve; ILAZAKOV, V.N.; BRYUKWOV# N.G.; NIKITDIP, L.I.;
KHVESYUKp F.Io; Trinima" uchastiya-, MAIU-Mg A.T.; KOVALEV9 3.1~*;
ROMkNOVP V.S.j MkRCHENKO, B.P.; ZIODUVA, T.I.1 OWROV, M.N.;
PECHENKINP S#No;;LUKIN# Xe*G; KHLUDKOVF V*I*
Shaft-furnade copper-amelting with an oxygen-enriched blow,
TSvet, mete 34 no,302-39 Hr 163.9 (,x9RA .14:3)
11 Irtyphakiy polimetallicheskiy kombinat (for Artamonov*j Lebedwrp
Tergaliyevs, Lesechkop Matveysvp Kovalevp Romanov, Marchenkol Ziidovap
Omarov). 2. VeeOoyaznyy nauchnoiseledovateltakiy institut tovetiVkh
metallov (for Yakushing Kazakovj Bryakhanovi Nikitinap Khvesyukp
Peohenkin, TmUnp Khludkov).
(Copper-Matillurgy) (Ox-ygen-Industrial applications)

SAVITSKIY, K.V.;_y
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Effict of thermocyalle treatment on the mechanical propertiep of
aluminum. Izv. vyso, uoheb. zav.; fis. no. 31158-160 164.
(HIRkl7s9)
11 Sibirskiy fiziXo--tekhnicheskiy institut, pri Tomskom
gnsudarstvenn~m~uniirersitete imeni Kuybyehova.

XHLUDKOVA, A.N.; SAVITSKIY, X.Y.
Effect of the':quenching temperature on pore formation in
cyclic thermaltreatment of aluminum* Izv. vys. ucheb.
zav.; fiz. 8 no.605-38 165. (MIRA 19:1)-
1. Sibirokly fIziko-tekhnieheskiy institut imeni V.D. Kuznetsova.
Submitted Julj;28, 1964.

KHLUDNEVA, K. 1.
D. V. Sokolov,' G. S. Litv1nenkoj and X. 1. Maudnevap "Conformation of
stereoisomers of 2-Methyl-4-ketodekahydroquinoline and 2-Methyl-4-oVdekahydr,DquinolJ-ne
and Some of Their Derivatives.11
report presented at the Symposium on Concepts of Conformation in Organic
Chemistry vhich took place iwMoscow tit the IOKh AN SSSR (Institute of Organie,
Chemistr7, AS USSR) from SeptBmber 30 to October 2, 1958.
Izvestiya. Akademii nauk SSSR) Otdoleni.le khimicheskikh nauk, 1959, No, 3) 561-.564,

50)
AUTHORSi
TITLE3
Sokolov lo Ve Litvi 9-29.4-IV77
,#i nenkoq 0. S., SOV/7
Xhludnevaj
XILSbuxochmlistry of NitrTn Heterocycles (III. Ster~ok6imiya
azotistykh geterotaiklov III. Stereoisomers of
2-Methy-1-4~-ketodecahydroquinoline (III. stereoizomeriya
2-metil-4-ketodekagidrokhinolina)
PERIODICALs Zhurnal Oahchey khimii' 1959, Vol 29, Nr 49 PP "12-1122
(USSR)
ABSTRACT%
Card 1/3
Upon suggestion of the late Academician I. N. Nazarov";~
the authoxis chose in continuation of their previous pa .pers
(Refs 1p 2.) the easily accessible 2-methyl-4-
ketodeoahy'droquirioline (I) as subject of stereochemi-al
investigations, which in synthesized from the acetylenp
derivatives (Ref 3) aooord,~ng to scheme 1~ It has threo
asymmetri&carbon atome and can theoretically occur in'the
form of four racematee. From among the four possible .
racemates the racemates (II), (III) and (IV), denoted in
scheme 2 Q,-- , ", and e~isomer,were obtained, The fourth
one, the