SCIENTIFIC ABSTRACT KLINGER, M.I. - KLINKOVA, L.A.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000723130008-7
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: September 18, 2001
• Sequence Number: 8
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

8/181j61/003/005/00/042
Dorilvation of a kiltio
DIOI/B214
Thii equation *an be #xpreased by,greens tesperMire functions of the
complex time t + 101, A different method.is-p however, followed in tho'fol-
loving: When us* is made of the cyclic property of the spur and the identi-
ty:
19 1XI - IQ to B - f I(X,rB)t where X Is th
complete Hamiltonian of thb sle.test tqo (20) Is transformed to.,
(x. - y1wexy- YX
In the second 4uantlsation and oonsiderin# that the electron photon Inter-
action in the principal m*AanIsA of scattering the following holds:
I
X + X +AVI A I ob+obo I
0 r a Evc, % r " ~Uq q q
q
at
AV at a (b; -'~b+j)j a C,*(aj$xp(i*;)ja'). For,f;vs
at q q
Zi
Card 2/ 13

A, ?I
23103
08119OW03/005/008/042
Derivation, of a kinotic,666, BIOI/B214
electrons Lj, C&-lexp(ly) nt)' 17 6(k k -P qj). The current
4oratore are A A a
au, a -Iron this follows:
ag,
V A
1112 %N ef
whore
44; 04
tl (3.1) takes the form:
Card 9/13

23203
Derivation of a kinetic
BIOI/B214
where a Hence for the .~ilectrlc
qo qnmOI Zo % ZnaO#ntmO o n-O', 2
conductivity of free elictrona an* 'Obtains: Red..('J) - 0 Im,g(E) - g(-EY1
, _Ef I Irea(a)(ej) . *2R*~,
02 ;9(z) + g(-F-) t
xy Im;g(S) +
2R9 f-
-9 19(E) - 9(~E),I (3-4)t where a (dk,/2r.
Ina xx L: ) I'n +1
h-. 0 Aco
I ;nk2n+1kz(E) (Cjo~/qo) (3.5)1 and for Pcjo~-,1: g(E) g0( S
(dk,/2%-M, Ok (E) ((.)Q/qo) 0 E + 0 For the caie o4 elastic
0 0 pik
scattering,at acoustic phonons sq.< kTt Zo 0 and for g 0(Ef one obtainsi
0)2
W a + (dk,/2 Waq,,p,-' (k, (k, k
Img0 Y 10 Z) W
-CO
* (Q (k Reg
0 1 - 0(E) (dkz/2 0)
z 0~)o
_0 0 z 0
)2]-l (3'
* (Q (k 914 By Z*ans of Eqs. 6-4)-(3-6)t (Ixx, cy XY are
Card?O/Z,3

ZJU03
/1 SL1/6 1 /CC I
S /CC5/CCB/042
DerIvation of a kinetic 310112214
calculated in the case investigated. -A) Whe n for re.&'. ;CZ ;?/3 -the following
holds: (&j - w0) 2 2 1 one obtains the ittrition equations of
Ref. 1. B) por (t., 2 in the neighborhood of resonance
4
-,A is neglected and the lines of cyclotron resonance for oath k
0 0 2
are a superposition of th" uasi Lorenz lines for whose width the following
holds: Q 0(k9"W) WiN #W), where
W, (k, (n.4- 1- 1) (-IYA:t sq),
ewe
C is the constant of the dofmation potential, 34 the donsit7 of the sub-
0
stance, and A8 (k 2)2m) (k + 4 2/2m. In the quantuz 11=1t investigated
2 z z
-the.following o1 4 .I
h dg.,
Card 11/13

23103
S/181/61/003/OC5/008/042
Derivation of a kinetic B100214
to
Wme t Ops
Q# (k,,' a) w
*W.' VkT-4- 2-r9m# CPU 0 0-16
Q0 - (ki,
It follows from Eqn. that f or f., 0 the logarithmic divergence
tdk /k of the scattering is removed *Yen without taking into consideration
J 2 z -1 4
the a'mall inelasticity. If eq 9,, (2)
2
B abd A denote the fluxes of charge, snorgyO oto. The Hamiltonian Af the
syn tem under review to H ITO + hoff' with
M, (Snto) I Ve I eft,(el);
(3)
I Sn"') 0" 4V
4), a Sp GXP Py OR) I It's to the carrier concentration; $a i/kT.
n(a) to the number of pbonon:# (:hIch,msy)v&ry In an a -+ s' transition
(o,ol ore lattice nodes)# n ), o -6881bnnj. The term A R, Is
0
Card 2/3
Card 3/3

h3936
0/0~02/=/000/bwoos
1046/1246
AWHORt
Klinctrp Hot,
TITLZ% %,he thoory of trt-rAport'phimmus, In lov-mbility sanicooductorm
(Derivatinn of fonvulon for fundammW kinetic coefficients)
P"*Lca at..!tu* tiolidit yo 2, no. 8p 1962 g 1062-IMI
TINT s Thin work ia a acqual to It.
L""limer's Previous papors (Ref.ls Izv. AX $=,
phy3ioal aori*ot no# llo 1342t Mi Rof.2s ALI S3`Jll# 142o 10651 1962
who re t~b
emor-al th-iory of transpxirl. rhenomn. in low-mobility aemicanductora In developed
vithout refer-nou to my concr-tn &w1el. It In shIrm that tlrwwport involves Wlti-
phounn trunnitions of po1.#run-t,/L-j. carrisiro betw-3,;* nArhborinC lAttico cuillo. A-no
General methoda of Rnf. 2 are wad lit detomining- the electric coAdu,:tivltjr And
T y raw
thormoolactrio azd therwomigiatic cootticV.-nUe Aho snare t port due to polarosts
ia found to be zaellCiblo* It iz ulna ahown that drift inVolveo independent transitions
whereas the Wl affect to dotemim'd try phao-carrclAtad transitiona. All th* mults
,.aro obtalhad for ai-yqtalo ulterii the cencentration of lattice cells is ouch hi(;her then
1/2

The'theory of tkmo,-vrt ritonomimn,,
--the concentration of carrier and 1wuritye
AS=IATIW
Inotitut polu;rovolrdkov Akudoxii Xau:e-MM UnInMd ("The bAituto
of Jitaicondu*toras Acadocq of ZkLemes V=0 Leniners4
summ )w 29, 1%2
CaM 2/2
_FE2'11,p~_h," NN.
wo maNk

3/181J62/004/011/009/049
BiO218104
AUTHORs Klinger, M, to
TITLEs Theory of tmefer effects In semiconductors with low mobility
(the characteristics of the electric spectrum of the system
,PERIODICALs Fizika tyerdogo telas' Y. 4, no. 11 , 1962, 3075 - 3W5
TEXTs A theoretical investigation of the energy spectrum of ordered and
disordered semiconductors with low mobility is described, u4clal
a2 / b cm2/y.see where leis 2 / 1, k, cs2/v. fee _at &POOO'e cut a is the
lattice constant or in general the distance of adjacent tons. Starting
from a system of interactinf pbonons and stripped carriers (electrons$
holes, or Frankel' excitons) located in the static field of a s*micoviducto4
the general properties are investigated for an unperturbed system and for
.& system perturbed in its r3n) base, Any anha i b non characteristic
to neglected. A representation of the orthonormlallsoodplih) bans, to obtained
for localized carrier functions and for the spective, The complete per-
turbance matrix differs from that given in Phile gage 3s 1561v 19561 J, Phis,
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spei/62/004/01i/009/049
Theory of transfer effects B1026/9104
Chem@ Solo',50 34, 19581 Anna Vf Phys. 0, 3430 1952. The singularitles are
studied4 The genoral oase for n.n' yields t :
-2Xa (I -t- Njj)J Vtmj*'-t-
N
Ii
(2.30).
(R*
For H O'gives f , and
(Ira
(2
V1i (x) In the interaction cipefficient of dros sod carrier with phonons
with the quasi-momentum rof the J-th branch and with a frequency
i '; I
Rb is the number of phononqjIS V the potential fluctuation,
. If
Ve.410MIS i~ Is 7 V18.1
The Investigation of an unpdrturbed system and of Is perturbation In the
(N) base fdllows. The intOrtelation of the syttes characteristics in the
Card 2/4
77

SP81162/004/01i/009/049
Theory of transfer effects too B102/B104
andf;n) bases is studied* The orthonormallsed 13) bone of non-local"
ised carrier functions to representedl In taking the translation symmetry
of the crystal into account. The exprearions-obtained for the carrier
energy in the bands differ by a pro-exponential-factor from those given in
Ahe papers mentioned above* Tho follo*ing expressions are derivedt
(306)
(3s7)
Ow W
'k=1k-;fjV1j_ carker quasi-somen'tum
(kn 10 1 Vie) SbwN# W., on, ale. (3-17)
re (kn leie ~`Iw)N--A
Card 5/4
f

S/181/62/004/Oii/009/049
Theory of transfer effects
(on iftl = 11P910 (Roll n,n-+-; [v/,., (A*,l cool NW)-4-
-+- (V164f (A"' I C4. I n,%,io eXP1,(vs-")1-
bu X
1(s I&VI ION411 jy0ori fwlefr (2.23).
J10f
0) (VINJO)"Y I I
Pol(~ro) (Tr*,d+Njrr,,,r(Wr)"O9. X
X exp [I (S.8 - x.Ae)],
Finally the relation of 11n),ok"d 11n) functions and expressions for complex
term shifts in both bases are:examined, R
ASSOCIATIM Institut poluprovadnikov AN OSSRO Leningrad (Institute of
Semiconductors AS USSRg Leningrad)
SUBMITTEDs March 12# 1962 (4nitially)
June 29 1962 (AMerrevision)
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a;/181/62/004/011/010/049
B102/B104
AUTHORo Xltngerf Me I#
TITLEs Theory of transfer effects In semiconductors with low mobility
(general approach In ths theory ottransfer processes and
criteria of this theory)
PERIODICALt Fitika tverdago talas v. 4. no. 11, 1962, 3086 3103
TEXTv The theory of transfer effects to extendedg and Its limits detomin0%
in continuation of earlier investigations (M, 4, lit 3075* DAN GSSR# 140t
no. 5. 1065, 19621 Izv, AN SSSRO ser, fiss go, lit 1542t 1961)o The object
was to arrive at general basic relations enabling any kinetic coefficient
to be calculated and also d9t*mIn* the criteria for applicability of this
thearyi, The basic equations for calculating the kinetic coefficients are
derivedv and for the zeroth approximation.th* follouing expression Is ob-
tainedo
d, 01'r*eRe (#~e(a,'JMJaj-#-4f.,,(a;JNJIal)), (2,36)
where
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S/181/6i/004/011/010/049
Theory of transfer effects in,*,,,, 8100104
(2.37).
I OR I X, I ifile P.. (XV1. (IeWrl
An example is given showing how to obtain the first and second orier
correction formulas, The first-order correction is of the following type
(2-40).
The limits of applicatidn are investleated for semiconductors with a strong
,electron-phonon coupling 1 0%,Ni) and with a small rallue of the polaron-
type carriers, The contribution of each approximation to various special
cases is estimated. Two appendices deal with problems &rising in these
approximation#* Conclusionst In order to realize the transfer offects.it
in necessary to have a high enough temperature, i* so T> T 0* *her* T0#Rv;
and 0 is thq characteristic pbonon frequency. Another necessary condition
is. p
Ae/4 wherebe is the electron band width* It follows from the
criteria that at T> T0 a new transfer type will occur, caused by transitkna
of localized carriers between lattices* Uneven effects with respect to the
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3,/181/62/004/011/010/049
Theory of transfer effects in B100104
Magnetic fi*ld# such as the Hall offset. are determined by the contribution
of phase-correlat*4 transitions, In this respect the transfer shows a quan.
tum-type character.
ASSOCI ATIONt Institut poluprovodaikov AN SSSR$ Leningrad (Institute of
Semiconductor* AS USSR, Leningrad)
SUBMITTEM March i2s 1962 (initially)
June 2# 1962 (aftei revision)
Card

01823
3/020/62/142/005/014/022
B104/BiO2
AUTHORt Klinger, U#
TITLEt Theory of kinetic effects for low carrier mobility
PERIODICALt Akademiya nauk 3SSRo Doklsdyg Y. 142, no. 5, 1962.,
1065 - 1068
TEXTs A. 7, lofte, (Canad, Je Phye.v 3A# no. 12 A, 1393 (1956))
showed the carrier mobility of some semiconductor* to be anomalously
love The transport mechanism In these Semiconductors was shown to differ
largely from the usual one. The author formulates a theory free of
limitations and certain difficulties for transport effects In an ideal
Metal with small polarons or other small polarizable carriers,
Electron-phonon interaction is assumed and an electron (hole) in the
field of vibrating ions of a three-dimensional Ionic lattice to studied,
The total Hamiltonian is given an the sun of the Hamiltonian of the
undisturbed system and that of small disturbances. The transport effects
are studied in a system with strong elsotron-phonon coupling. The kinetic
Card 1/ 3

j/02 62/1,12/005/014/022
8104Y,3102
Theory of kinetio,to
coefficients are calculated by expressions from preliminary studios
(M. 1* Klinger# ?is, Tyerd. tels, U, no. 12, 1342 (1960)t Be Xubo,
J. Phys. Boo, Japan, 12, no, 1, 570 (1957)). The conditlony'IM
9.,1? and are the small parameters of the
theory) is a criterion of the applIcability of the perturbation theory.to
the calculation ofJO bstraoterfs notesh not defined"i
AM AB mean c
Oxp (T)), where Ac is the carrier band width v w0 the characteristic
i means that the migration occurs due to transitions
frequency phonon, 5) \
of localized polaron-type save packets between the colls# This takes
place only if the lifetime of a packet in a cell is shorter than Its
Card 2/3

5/02
4y62/142/005/014/022.
Theory of kinetic... B10 131 02
leakage time. I is the condition of quasisteadiness of the state of
polarization of the latties around the o&rri*rs, This paper was the
subject of a report given at the Soveshchaniye po forro- I
antiferromagnetizmu (Conference on Forro- and Antiferromagnoties) in
Leningrad on Ifty 6v 1961 There are 11 reforencest 4 Soviet and 9 non-
S&rL4V,. The four most ;ecent references to English-language
publications read as follows. As Millorl E. Abrahams, Phys, Rev.#
no* 3 45 (1960)o C. Ho Jonkerp J& Phys* Chem. Sol., q# no, 27,
1 9)1 L6 van Houton# Phys, Chem. Sol "q no.
165 ( ;5, 1/2, 7 (1960)1
T. Holstein, Ann. of Physep not 3. 345 (195;1.
ASSOCIATIONt Institut poluproyodnikov Akadeaii nauk SSSR (Institute of
Semiconductors of the Academy of Sciences USSR)
PRESENTEDg July 24o 1961, by A. A, Lobodov, Academician
SUBMITTEDt June 28# 1961
Card 3/3

ACCESSION KRs AP4042709 B/0020/64/157/003/0566/0569
AUTHORs Klinger* go 1.
TITLEs Theory of n~ons tionary conductivity of semiconductors
with low mobility
SOVRCEs AN SSSR. Doklady*o, v. 157,.no. 3, 1964, S66-569
70PIC TAGSs semiganductor carrier. carrier inobilityt semiconductor
conductivity, polaron* crystal lattice
ADSTRACTs The theory developed by the author,elsewhere (Phys.
tvard. tela, a) v. 4# 3075# 19621 b) 4, 386, 19621 Phys. Stat. Sol.
V* 2, 1062, 19621 DAN v. 142o 1065# 1962; Izv, AN SSSR nor. fiz.,
no. 11, 1342# 1961) is used to calculate the tensor of nonstationary,
conductivity a (w) and mobility u (0) for a semiconductor with low
JAY JLV
mobility, in which a cartior such an a small,polaron is described
Card 1/2

'ACCESSION URt AP4042789
essentially by a local-typo function. Approximations are given for
the ohmic mobility and for the contributions made to it by the *jumps*
:of the polaron packet and its "diffusion." It is deduced that the
mobility ban a noticeable maximum as a function of the frequency*
'The Paraday angleand the mobilitIy are determined for a magnetic
field parallel to the OZ axis in a similar fashion for not too small
frequencies, for crystals in which three suitable sites can be
mutually nearest neigbbors. it is shown that usually the raraday
angle decreases with increasing frequency and with increasing tem-
perature. Orig, art* bass 11 formulas. Repmt presented by A* As Lebedeve
ASSOCIATIONs Institut poluprovodnikov Akadmii nauk SSSR (Institute
of Semiconductors# Academy of Sciences SGSR)
O7May63 ENCLs 00
SUB CDDEs 08 NR REP SOVt 005
OTHBRi 005
cot-d
2/2.

--7-7-7
ACC'
W AP6002041' -011/ 0030/ 65/012100210765/0774,11,
AUTHORs Mildra, z
010.1 36stitsits- of% Safi Ila Utbo -Aeaden of sciences of the
USSR,
TITLIt Theory of trgssvort:~,, Aisomeson to lov nobility crystals, 114--,
Relaxation and soolareas as a stochastic
jumping process
SOURCIS Physics st,stue'salidt. vt t2v a*$ 26 19639 763-774
TOM TAOSS GOS46066 A, conductor crystals crystal
transpqVt 1he out
propertyl crystal -thdoty.0 pol-arout stochastic process$ Uses awairgy.
relationg physical diffusion boltutans Aistributiang, Markov process
AISTRACTs A stochastic theory of high' temp's ratuts, of small polaron
transport wavAevelop-sid, 'is saarallsiftj on Savellos model (a., sevalli
Phys"Revo 1290 597; of, local small Polarons, Is:
Alsolusseds gad A quantitative- cturo'-of-this no*-Daltansualtype of
-transport to given, Th.&-,tr4ftsv~Ort,&nd relation of sueb-carriers can.
be considered &s:& stoahsitlity0a 6f.hopving aiffusione but Its main
equation to son-Markdviss (Vtth ms4ory")* Ovils artotast It tormia
W2/ M Nw, Ow

KLINM "0 16
Charnateristiom of the transfer and relaxation of mall-radius
polarow. DoU a AN SM 165 no. 3s520-523 N 165.
(WA 18111)
1e Institut poluprovadnikov AM SSSR, Subaitted Yobroary 16p
1965.

S%rengthaning a metallio railroad "ratru*ture with a
prestressed tie rod by beating. Rey efillmr f*r 12 no. 61
322-326 Js 164.
1, Planning Institute for Transport and Telsoommundoationse

K1.111GER, P.
*~-'echwdr'gtiOn Of ft"MAing CO*r" Todder. 353 (jp_Wkj-j
Vol 0 ij zr OEM
Ito. 12, Doe 19541 Dud"atsffiuWary.)
Sot Honthly List of East Duropean Acca3z;jons (=AL), ZZ, vol. h. 110. 11,
April 1955s uncl..

CategDry USS/Optles -~ Physical Optics
Abe Jour Ref Zhur - Filikup No 2p 19579 No 4M
Author Vulisp L.A.p jQjW, VIO
Title Concerning the BTU V! M Calculation and 81milation of Radiant
seat ftchangs.
Orig Pub U. tekhn. flilki, 19540 24, No 11, 2070-2078
Abstract 7he eqxwtions for %be radiant best excMage betveen V%y bodies,, soptr-
ated,by a a9dium that is transparent to myv, ate, considered. A compu-
Ution procedure is proposedp besed on the direct tonnection bet"m the
Intrinsic and resultant radiation. The possi%W*es of using a liAt-
ray analogue of the radiation beat exchange are evauated.
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