SCIENTIFIC ABSTRACT KOLOMIYETS, B.T. - KOLOMIYETS, M.F.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000823920007-0
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: September 18, 2001
• Sequence Number: 7
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

j
ACCESS ION XR: AP404IL377 SA)04618410231006AWTAOGC~
IAVMOR: jv4n0v4Wkly~ V. 10 KolcAjyetjp,B.T.,; Mml*kova,jk.A.; Ogorcdn1b0W*V.K.;
~Suekalovap K. P.
TITLE: Electric properties of slugs crystals of p-type K&Te and Its alloys With
CdTe OUport, Third Conference on loijiconductor'Coupowds held In xisfilnew Is to
21 Sep 196V
SOURCE: AN SSSR. Investlysi4eriya flsldwskays~ y.28,'no.6, 1964, 195,41-10"
TOPIC TAM menlisonductor property# Hall constant,' limircury
telluride, cadalum tollUrld.e.
.'ABSTRACT: Single irystals of Ngft and MigTo-OdTa-solid solutions wore-prepared by
i.Br1dgvAn*s nothad and annealed In'norcury vapor. Electric conductivities, Hall con-
stuts, and meWtorealstances wire wasured, in acme- cases at temperatures as low
as 20K. -The relation between the Hall constant of HgTs aid the i~"tlla f lold was
deteradned at.4.20K. rm relation' betwees%,the Hall constant and the- swrosto aim'-
re
tance was deteralned for new at several - temperatures' and was fomd to be limar.,
The.behavior of t~~ Mall ocastant'of ffgft 'at lo!jr temperatures varied from sapplo
2

j
I AOMBSION Us AP4041377
7r
sample, and in . am cases It changed sign at about SOOK. Infrared abs"Ptloo'conf-,
ficients and photosensitivity spectral distributions were also measured. Many of
the data obtained are presented graphically. The concentration of current carriers!
In HgTW at low temperatures, as determined from the Hall and magnetorsolutLve of-
1016 am-3
facts, was found to be large~(about-2 at 4.20K) aAO to Increase only
A~ !
slowly with increasing tem"ratur4. It In concluded that 'there can be no energy gap
between the valence and,canductlim hands, and therefore, in agrooment with Strauss
al. (A.J.8trauss, T.C.Hormon,,A.G.Mayroldes, D;H;Dlckoy and U.B.Dress
Intiirn.Conf.Senicond.Phys.Exeier,1962), that HgTe is a seninotal rather than a se#Ao
conductor.. The data are'analysed ~n term of the band structure found by Strauss at: IJ
al. (Loc.cit.) for solid solutions containing 14 to 17% OdT*,:.4nd It lo'concluded.
Ahat the V2 valence band overlaps tio,'icsonduction band by a imato ' .6.13 W at
PP"X l7
tj& 7
0' afthe solid solutions were found to vary continua
`30001. The propertle ugly wi
composition from those of a'soulmotal.forlarge HgTe concentrations to those of a-
I.semicandu6tor for large CdTs concentrations* The critical CdTe concentration above
:j
which the materl" behaved as "a semiconductor was'. approx1pately 30%. The !behavior
of the Infrared absorption,," of,the photosensitivity, v" in agr".i,
ment q,tth this conalusiono,- Orl
goartobast....10 flarmulaa,.O figures and I - tab.le
J
A
Card

APi044636
T

Se T-tva no
'r A chalcogenide glans, cxyChalcogenti de gi a u3 , inLxed
glaso. lul-latitution V, c h -I Ia-
~.ilq oroperties, aimir-unducting gla-i;
v f ch e a.9 1 tv
z e n
reccmmeudd'lun o'
w arcw x: r EC, a r I

Rmd qb '0 1 t ihown th -I tA t a
h A 4 S
S -2 S b Y T!
:77- -

Z
L '10396-65
AP4044636
Q'n,-)wed that 91aeses
if fer in F in 3 t ruc t u
-As 1'0 -
r-e L
i-zed also in the As,,ci3 v J
A 3 2 s ej-14go, and Sb2o3-PbO-Sb2S3 systeme.. Ttle S D 20 3-PbQ--SD2S3 5 Y A
j 1 1amounts of gjssg(!o and has two glass formation re-
1. - c
wflth respect to color in.3 v
v 'I z 60 ge ne z g
;,i rhe
effect, they can De claasifted a g
cil the new glasses in acids and al'kaIlq iq ~-zigher Than
tI a L0 t:hale-ogenluie glaaaa5. T)eir denstt-v ti I-w- but their soft-
than those of chalgonite glassea. CrIg. art.
h i ghe r
t '7iziko-tekI1nicheskI.y Ingtitut JM. A. F loffe &N SSSR
c a 1n a t i tute AN SSSR)
ATD PRESSt
3

N R AP4044636
S J R
TabLe 1. some parametara of oxychalcogenide glaeses

I R rO p R 4 Q
Ohm C-.

3

"j 63253
3 12

j,j 0
-sU6

MIN ; 7%E
IN
NO
M

~8Q5-f,,,- :,7WT('!/EWGW (m1/T/S4P(q~A%rP(b) P z -6 /"Pq - 4TJP ( c) /AS (Mp~-2
IT
D/ATVi
ACCESSION' NR: AP4044637 8/0048/64/028/008/1298/1290
anduatorA
T M-2 viostii~~! ~f amrrior mobility in vitreoua semic of the Tl-
(So Te)3 S'."Itcln ~ffoport, Third All-union Conferenct- on gomic-onductor CompoundB hold
SOUPCE- AIN SSSR, lz'v.' Seriya fizicheslmya, v.28, no.9, 1964, 12H8-1290
TOPTC TA-CS- Exemic-onductor conducthiiiy, Hall corm-tant, Hall mobility, drift mobill-
t-;-. selenium compound. arsenic compound, tellurium connipaind, thallium compound
ABSTRACT: The conductivIties/and Hall constants of v L -havi ng_ the
.,XTexi_~Iem measured at room temperaturi for values of x from
co:~pp citron T1l,2SeAs2Se3..
1.'iP !!all -onstant, was measurrA at ;r~5 Fr'w 71.
-v-d ~,v -oc.
~r Ll rif t mobil It les were meas!ii !1-,i re Pi
11nv-_-Lioc.R-7U,66Uj195T) for values of x fr",. (I to 1.2. Tho Hall effect wanurements
--.~--irformed with alternating current In an altemiating field to facIlitato Mea-
-7 to 10-6
,ir~:~ent ol the -weak Hall emi's (10 V). The Hall z.;obility was foimd to be
independent of temperature and to incroase from 0.02 cm-2/V sec for x = 1.2 to 0.08

.t42
L 6905-65
AOCESSION IM-- ANVA637
cizi2/V fiec for x 3. The drLft-mobility measuremnta were performed with samples
from 20 to 40 microng thick. Wriors were produced Pt the nurface " a flash of
t oxcee-d tog 0. 1 n1crosec, and the drift of Vi,,tih -1 ---: r,~n- and iinleil Iran C-,b-
mtt~-. of electron mobility to hole mobilitv vaf; fr~.,Tj~d tn h. f) 'i in-
nd in
n
7 -1-1 oluctrons and zhe ftelea were ahor,+ li7ed 3 x 10-5
6 f 16rul-eig -
kS-VIATION: none
Ail iih~ vv I
CX-)
MTR-003

1VAN0V--0MSK1Y 9V.I.; KOL01-11YEPTS, B.T.; MAL?KOVA) A.A.
Optical and photoelectric properties of HgTe and its alloys with
Me. Fiz. tver. tela 6 no.5:1457-1461 My 164.
(MIRA 17:9)
1. Fiziko-teklin,"cheskiy Institut irnerLi A.F. loffe AN SSSRI Leningrad.

'in vitreous TI.), 'Pop.)rt Third All-Union
t i mu; a t ed current
V -S~l T-l va fiT I ch6skava . v . 2 8
a m j n nnd t j r f n r-,ind or t iv i i)h,;t,), rKiuctor activatt-A
ex, P'33 Li rt, offef-t , discovpred ntany vt~;,,:-- i z. no s 9 le n I wa
t en r. 7.414~; 10111 t t

~CCP",S) 1('W MR A PA 04 4 (33 9
i to 1, wl~c 1-0 L IS thlJ OXPO-Sure ilMt v 65, Tht,5,
I Y d uo t 0 the exis t onve I n t-h e v I t r-, i i Ilq
';j j"-.q~ _rqjt'~r- vjj:C-'h
-irrl-T-, PrWuCed by the lll~jmlnatio-n and ~!iu, ir. I--- -,-.
Tllj~ incr~aae ir the enhancovl c,)nouc-,lv~-v t.Kposuro Indicates that
:v-)lritlon ~)f trapped carri -f_-r~a, ~ar pmportiotial to the concentrati-
Ithors 'Z~ftciwe that the numVer of t m, po 19,
i; saturat I on ~ was not re a t-h ad 1. r t h
i Tl,)St~A q-)-, e-i -z-, s
X TV!M ",t
7 o 'v4. -t,- -
-;iLion mergy ob-
inntitut im.A.F T'~f lc- Al"
3 S S I n 8 t I t u t f i z i k I i MA t %M, ~Al -.7.
t It
RathemLttcs,
OMER.

L ,604t=(gs) RWA76
ACCESSTON NR- AP4046657 S/0181/64/006/010/3196/3197
Oiomi-~'et~z. ~B~T; ~'_-,odc;aevich, P. K.
levels in polycrystaiii-
rizlka tverdogo tela, F. 6, no. 10, 1964, 3196-3197
TOPIC TAGS: selenium, polycrystal, energy level,
t1vity, temperature dependenc-e-.
To' e ermine the depth of adhesion levels,
"S MLCT: responsible
for the increased conductivity in selenium layers follnwing applica-
of illumination, the authors measured the thermally stimqlated
in layers of hexagonal polycrystall'ir-re selenium heat-treated
at 463 -t 111 foz .121 hours. The distance between the electrodes
tcolloidal graphite) was 1 win, and the axea of the light-sensitive
z-r,~ace was 1 x 10 nun. The thermal ly- st im,,, llatfi-:,~ _--,,rrPrt was me-a-
3ured at- initial experimental temperatuies 223, 173. 123, and 83K.
I // 4

L 11076-65
ACCESSION NR: AP4046657
llke~ test promdure is,'. e6 ribed br
iefly. The selenium samplee wure
;99.996 and 99.9999% pure. The measurement sq !I ~1 ll,:),.-T h
deTPn~,Ien-ce of tho
accurate
t!mQnt, ne depth of the adhesion levels was measured by a
6Ldridard procedure under the assumpt " ar i f
_:,i 7i -3 the mass of th~.,
z8 iaaepa
ndent of the temperature-. A plot of
i-urrent maxim.aobtained for ono sanp~' "F-g,
I -i ; TL .T.-ie values calculated from this figure for the depth
-.dhes-ion levels are 0.12, 0.1. W, and 0.23 eV, and dif fe-r somewhat
-ata for single-c
op e n d s ~7 zL ~.,i a-,=, Lnen the depth may turn
Do sma-lier. "The authors

'ESSION NR: AP40466-57
ASSOCTATION:
"zikO-tOkhrlJ.Cte8kiy inzititut im. A. P. Toffe kNT SSSR
'2Cf'_tC9bn_ic__al_ Tnatitute &,q SSSR)
kj - -r r:- n
l7jun64
ENCL: 01
!Guz-5 coDat SS, Tiy
!.NR REP SOV! 003 OTHER.- ooi
C-I 3/4

0
9 W Ro a w -I"V] P17
T, -K
Pig. 1. llwxmaUy indumd mm'ent M In Lymrq, of SP~um
&t varicto tgffperstAn-%-:~s (OK) iI - 233, 2 - 173, 3 123, 4 - 83.
cord 4/4

L -12888-66 hMP(e)/EWT(ur)/ENP(b)_ WH
ACC NR, AT6000487 SOURCE-CO69: UR/0000/65/000/000/0171/0174
AUTHOR: tKolomiyets, B, T. 8-h-H-0j- Y.- -P.
ORG: None
TITIX: On the possibi lity off obtaining oxychalcogenide glasses
SOURCE- Vsesoyuznoye soveshchantye po stekloobraznomu sostoyantyu. 4th,- Leningrad,
1964. Stekl6-obraznoye --ostopy-atilye.(Vitreous st;ite ~_sove~q ichanlpi~__ -,, _nfr-aff~-#4-vo
-Nauka, 1965f 171-174 -
TOPIC TAGS: glass, gl ass property, arsenic compouM, sulfur compound, selenium.com-
pound, germanium compound, mercury compound, copper compound, lead compound
ABSTRACT:- In an attempt to obtain mixed oxyclialcogenide glasses, the regions of glass
formation were investigated in the following systems: As S -As Se -Sb 0 1 As S -AE4Se,,-
2 3 2 3 2 3 2~3
PbO, As S -As Se -HgO;,GeSe As Se Hgo, Sb 8 Sb PbO, and As S -As Se CU0.
2 3 2 3 2F 2 3- 2 3- 20f 2 3 2 3-
The corresponding triangtilar phase diagrams are given. , The data indicate that oxychalcogenide
glasses are indeed formed in these systems, and that-ley constitute a large new group of
glasses whose properties should be 'studied. In &proltminary Eitudy, certain parameters of
these glasses (a, T AM were determined and found to be similar to those known for
ebalcogenide glasses. Particular attention is drawn to the As2S.-As21e3-Cu0 system, which
Card 1/2

ACCE-3-STON NR- AP5016583 tJR/0363/63/001/0051'0721/0724
7 '221
T ri I y a k c~ v
'.etw-jen arseni r ~;;il
C
S R Izvestiya. Neorganicheskivc mi, r e r t,~. 1
1965
TAGS:
arsenic sulfide, lead sulfide, arsenic contai.ning a)loy, lead
~ui-alitii~g alloy, alloy structure, phase diagram, Tmmann triangle
A B7~-A C-I Alloys of AS2S3 and PbS were prepared both from he r~lements and from
PbS and wt- e
r ~Iv
i. bdn(; )v microsrructuraL Ar, L r i -d-,. phase diaRram
e0! W,:I '3 11.~ r 'Ii-- z
P
now - ----- cori" POUdjin--t-6- ths
~~rA:4art or te--d sc-Leroic-jasita.- Wher, ctmplate-arr" ta
liaftn of the alloys of the aystem was carried out, "itreous AsnSI ws
was thus POSSLblle t. 0Cie t
A + al
1/2

J
L 56703-65

ON NR: A
P50,16588
.

T (softening range of the gias5)
f
in t'-c
System,
-
l
i

the Identity o
the value of the eolidus line ith the me
temperatu:e w
at
ting po
- ~_M~ M norp rrvqtp
11in,p A82S3, Tamann's trianple,
IT-,e Lf- I! r av ~.,h a 9 E

p,; ci A
16"'

.I,:, r.T A
k Id em-1 i nauk SSSR (Institute of Gertera 1 And T norcAnir Oh-1cf- A-A~v ~f

= F 2.3J an6 5 ENCT;: 00 ~irp rn~,F. T('

Z 'F

I 11=45-
T RDW/JDAH
Ic
ela, 6, no. 11, 1964, 3317-3-320
.'.P7C TAGS: electric conductivity, thermal emf, glassy semicondu6-
mobility
-kBSTRACT: The temperaltures dependences of the electrical conductiv-
,t,,,- -and thermal enif of materials of the syster- Tl2Se.As,2(Se, T,--)3
ear-Iier by the present authnrg ~"Tssledovaniya po polu-
...... a-7'' ',Fese-irch- on Seitaic(~n:!u~:t~-,~-- 1-toldov,,nyaske,
1,364); the present paper gives the results tor five other
rs- T-11 r7 1-7 -
i of the Tl Se.Aa 2 --when A00 and IOOK.
of the telfurium content ~he rooin-uempeiature electrical
Cord

L 11997-65
ACCESSION MR: AP4048406
conductivity rose exponentially from 10 to 3 x 10 ohP_1
U CM
-iii-e-zeased the
- -- --- Syl- qf
rarriarR increased linearly from 0.67 eV for T12Se.A'2 Te3 to 1.2 eV
for Ti Se-As Se3. Vne semiconducting qlasses exhibited considerable
2 2
rmA, P-mf For example the room-tenT)erature themtal emf of the
U 1. 1 Uffl.
_~:j- j-er)pej, the i~rnf imountea tn
11/-1no for Tl,SeJk-,2Te-,.. An i-1,-9f-.,7a,-F, -~f th#p tempera-
ture dependence of the therinal emf showed that over the whole range
-:TTnpraturps all the glassy allovs had D-t%,pe conduction. When
Inature :)f
-ed'intrinsia conduction. The data an the tem--w--
't-ne, dependence indicat /- - -__
lependence of the electrical condvictivity and thermal emf
rT" -' r r 1 P -'n
1-f "I'le the ratio ot th- -hitit.ips by the
~=,,3t a!'' rie semi -i-insic -con-
T' S
c r a t I o -rder of 0.1,
~-C, hole mobility was approximately an D-Jer ot magnitude
MCL-JL11t~/.

ACCEssioN NR: AP4048406
Ihe mobility ratio tended to decr~!ase- T~,e hole mobilitv was
found to rary weekly with t-he composition. I`he nature of the de-
nendence of the- forbiddon.-bandwidth and the associateO paxameters, on
assy ma-
nlim and tellurium content in the inveatigated g!
_i a _g r e eme ri N. A. Go7 o
,o-iova
and one of the present .,aqthoxu V~DUtK41"lui- 4 ~i- --t-~--f-e-rence a~venl
metallic when liot 'CoMr-
~.Ihat the covalent bonds in glasses became
ponents were replaced with heavy ones. "The authore thank G. S.
)-)P-lp .4n thesc, measurements." Oriq. art. haB:5 figures
TT I)N -Fiziko-tekhnicheskiy Institut im. A. M. loffe, AN
(PhVSICrjt&CIIfIIC-A_
TJTB Mr T T E D26May64 FNCLz 00
SUB COMV. - as?; im OTHER: 002
Card 'A/3

KOLOMIYETS, B.T.; PAYASOVA, L.; S11TOURAC11, L.
Heat conductivity of semiennducting chalcogenide glasses, Fiz. tver.
tela 7 no.5:1588-1590 My 165. (MIRA 1825)
1. Fiziko-tekhnicheakiy institut imani Ioffe AN S&~R, Leningrad.

-:M E15 TOM -I;R AP5010755 f' r' 7 3
~S!~l qT~_~_y t i
r'. f. r on
FiaLka tvardogo telal v. 7, no. 4. 10,65, IL261-1263

forbidden zone width, In Sb GaSZ) alln optical transition

ERR _,
BSTRACT
TI
'
~

t
--e er
Op tie
ties of norsocryst
alline
0
addl t~nni 67 TTF -we -

-no e VI r L.

0

a 2 ull
vtth dlfftrent compoaLtion .!p r.1 0 11!, Q a!z;'
V
&

Lie F i c i an tFrom the e- r~ u r, f r o f a b -
t h t iC (fo- four dif-
-)n ieve- I th war. t I on roof -
-pe;ileucc was I L a , e
uith an increase in the abSOT-nt,iI coefficient. the
t; nt, P,.(npi*Ltnnrir a ia a r- aai"OughI
aEt incre a s edGaSb 'IL i I :i Isis a Ccri D -
-Ict. that the chan2,i o th respect t c
Q'I
n e e 11 e- r
t In n2 0 f, ecjf~ n th 0 r 12 a r t ,a r J A I
21 Nov64 C 0.) S "13 C 0 D F
.t U J A T:~, P ki: 5 53244

2 e /WT 02) Aw? U /_,v~
,his is a contimiation a! caxlier wor& on T-ne "ectric propertiea of
glass scmiconauators (F ep -Ids r.,
1959, and elaewhere). The
7173 7re TF h,-,d a
were Snvc~sti;ffuffied under various conditions at 1cra tempernture in da-r)mess and il-
The photocurrent was measured in the tc,.TD4_%rrtur,, Intey-ral 100-200K P-f-
rt-ached aLn equilibri= dUrk r~egjg+M-,CFI~
-0 -.n eLre briefly
~vitb ]LIgh" Of
zrith lixtuegral UgUt alvayw inerease-d the nhOt1-v-?-.-dvctjVjty

L 65252-65
'54
ACCESSION NR: Anoi45
Removal
vAq preservied for q long time in darkness.
of the long-wave radiation- caused thv darl-, C0nL4,,!c ~,_, v-Y t", -,j~, 61 _,~j
0 lrldlaee of6corAucti-At'j, vit-bout a proucunced
~ i ~ _4
r-1,51+knC-.-, Con-
--al"s fluctuation Levu.La.
of the impurity and induced Photoconduct!vity were ai-so
to
pje-und__A~ ~ex L
1 nc~ of tho- carriers ranged-fv'om 15 to 25 1fdd_0_rf(rS-- th-4-Yfiff
fo.- the rolaxat~,,:~--, c~ ~,-ie cni-,r-entt; -,,lg. irt- h"!
'm. A~ TF. Toffe All 81093P, Leningrad
SUBMqTM#
RF PTIF SOY: 010 OTM, 001
'lard 2/2

---------------
L 6332-66 EWT(M)/~TO/sWO(M)AW (twupto ii (c) RD4/JD,
~P
ACCESSION NR-
AP50tft UP/0181/65/00TAXA/2534/2535,
AUTjiOR: Kdlomiyetsj - B.T Romanov V Go Khodorevichj, P. K.
TITIE: Spectral distribution of Internal photoeffect In hexWral-selenitu-
~temperature
~SOURCE: Mika tyerdogo-telp- .-Ts-io 8 105, 2534-253$
____TOP-1C--TAGS-. spectral distribution, selenium., internal-photoeffect., radiation sem-
~sitivity., forbidden baadp~electric conductivity, electron trapping
,ABS7MT-. Theauthors point outthat, earlier date on the spectral distribution of
the internal photoeffecat in seleniun at 83'and 95K are not normalized to unit in-
~cident energyt and therefore did not mak;e it possible to,determine the true Spec-
tral distribution. They have therefore carried out suitable measurements, on 11-5 1
selenium 45--80 tL thick,, crystallized at 483 � iK. ror 12 hours,, using electrodes
of colloidal graphite$ spaced 1.mn apart, with 20 v applied.. in a special vacuum i
instrument at 83t 123) 173J_ *nd P-93K. Comparison of the results., which axe shmi i
in Figsi 1 and 2 of the Enclosurep,discloses that when the data are reduced to unit,
ineicient energ7j* a decrease in temperature causes the sensitivity to shift to the
short-wave region of- the spectrum. -Prom the spectral distribution it is then poo- 1
sible to -obtain the width of the forbidden band for different temperatures. The
1 Card 1/3
~to -
1~ Cat

L 2118-66
:,'ACCESSIOII- NR; AP5022707
,the wavelength of theinfrared light,.-and fi.as a maximium 'at 1.3 u. fmpurity coinduc-,
iuvity has also-been observed-in vilureous arsenic-selenide-with amaximum at 1. 9
which corresponds to a-0474-'e'v depth.of impurity levelst.-Ao quenching-of light,

:Occurs in vitreous materials.. OrIg. art. has - 4-figures. p,
(%ZLI
:ASSOCIRI!ION: Fiziko-tekhnicheski'y,institiLit im. A F i' tof ke All SSSRO' Leningrad
~(.Physicotechnical lnstitute~_ AN SSSR)'.

SUBMTED: ~614ar65 EUCL.i. -M--- SS P-4
SIM CODE:-
.110 REP SOV: 001 OTHEM 005,`,`-,-`-~],;-' ATD PRESS

7.

~q

~Card 2~2.

L
EPA(s)-2/EWA(o)/*W(M)/EW(N)/EWP(b)/;/W(t) -7
ACCESSMU NR: AP5005381--- Pt 11
ALM10;* Ivanov-0makly. V.1.8 so DiV.1 Mallkova. A.A.; OVEg!Ln!kW, V-K- ,P.,
5m.kqloi_-
___ a~, K. IP. . I . I p . , I
TIT - Galvanomagmetic properties of teUuride p
SOURCE: Physica status solidl, ve 8, no. 2, 1965, 61,3-618 e,
MPIC TAGS: galvanomagnetic property, mercury telluride, semiconductor, donor
concentration, Hall coefficient, sezimetal, singlecrystal conductivity, Hall
mobility
ABSTPAM: This paper reports the results of an inveetigatimof.the galvanowg~
netic properties of Rea carried out on purer p-type sa;Vles~ and also the re-
sults of measurements saft oa an a-type single crystal with an excess concentra-
tion of - donors a 4-5 x lolb w-3. This Is a continuation of an earlier study
in which the Hall coefficient and cmductivIty of p-type single,'"tals of EWe
at low temperatures were measured. It was an the badis of thls~study that the
conclusion was osda that gas In a sealisetal. In the present Investigation the
conductivity, RaJU oceff1clent, &M dbangs of resistanes In a mgmUe fUIA wage

L 436ol-65
ACCFSSION NR: AP5009381
meacured in the temperature interval 2 to 3WOK, No rlaorouo agreement between
experiment and the Wo-zone cMdwtIVItY softl vas observed. The H&Te single
crYstals were PrePared by horizontal gone witing6 An estimate is given of the
temperature dependence of the natural cencen%ntiaA of cbmp ca eg. Tr ~ SgU
Wi A
j
mobilitY of the n-type samWU at jw tooprotuM exceeds 2W,000 M /sea* origo
aft. ban: 7 figures avA I tablis.
ASSOCIATMIs n8lbo-UMMob"Idy Institut, T&nUWM
tute)
EUMMMI IMLI 00 so 0=1 lot as
NO MW SOV 1 002 om
IC

~5-0-lluh-ed -;etul thin
ne tace
76ili OF,
itd~n
A. nf -I Mkl%ry--~ ~1.,*Crizity produced by EL squaxe-vave Gr*
The

am
L 52232-65
a_nd j j:s
e' c an -ect:
n z, :.-n
qu I t-'e- iltai~ to tbe'plat off th h
fl otoragnetia effe Vy
-lei in msity is
~4 kc-teldim4,chzskiy iz,,sti+Lt im. A. F, Tolff-e Akaderdi nauk SSSR
jC T
c4E4-2/2.

L 3459-66 Ew(l)/EPA(s)-~/ga(m)/F-TC/EW(I(M)/kPA(W)-2/T/aI.P(-'V-
:A0CESSION'NR*'-'--AP50172 Wl/,D/JGUR/0020/65/1~2/006/1269/19701
AUTHORS: Ivanov-Omskiy; V. I.; -Kolomiyets, B. T.~; Oro n ov, I
~V K Smekalova, K. P.0
TITLE: Electron mobility In - HgTa 67
RESOURCE: AN SSSR. DokladyY,1.'qVJ'A2, no. 6, 1965, 1269-1270
t
TOPIC TAIIS: mere ompound, tellur-idel-lHall coefficien semi-
iconductor car-r-l-erelectron mobinty, ffa-gnetoresistance
iABSTRACT:' In view of the difficulty of determining the type of con-1
of HgTe from measurements of the Hall effect, owing to the
mobilit
~larger ratio of the electron 4r.to the hole mobility (,,,100), thd
;authors investigated single-ory8talkY3amples of HgTe,'prepared by zonej~,-
I
imel-ting with subsequenE annealing in mercury vapor, over a large range-.-,'
!of temperatures. From the temperature dependence of the Hall coeffi-
.cient it is concluded that HgTe is a semiconductor of the n-type,
Jwhose carrier mobility has a temperature dependence typical of the
,degenerate electron gas in semiconductors and in metals. The electron.---
Card 2
-----------

L 3459-66
ACCESSION79R:*
imobility is quite.high at all temperatures, reaching 200,000 CM2/V-sea,.,
Me Hall coefficient exhibits a strong dependence on the magnetic
.field intensity. This is attributed either to inhomogeneity to the,
.crystal or to the complicated energy spectrum of the electrons in the!
,HaTe. The magnetoresistance of HgTe is characterized by cul-ves having
!a continucusly varying slope and exhibiting no saturation. This
!report was presented by B.~ P. Konstantinov. Orig. art. has: 2
ifigures
ASSOCIATION: Fiziko-tekhnicheskiy institut im. A. F. Ioffe Akademik'-..'
.nauk SSSR (Physidotechnical Institute AN SSSR)
SUBMITTED: 16Dec64 ENCL: 00 SUB:CODE:
-NR REP SOV: 003 OTHER., 005
Card

'R. 4t~~,
A-P',-O 125- 3 161,Av-r/W5/-1588/1590
IT
15 %ALI
On the thermal coaductivity of semiconduc+or chalcogenide glasses
7'17ika tverdogo t e Is, v. 19 1 159(,
n 5
ILL
I rn~!d tr~ b~
on AsLJS~ r-i-I
~~-y~,tbesizcd by the method described earlier by one of the authors (Kolcmiyets, with:
A,
a kova ii~ ii,, o L I I -IJZ Y- A-,; ~L~;F r Ii'licL
-~R Llikf'
manner as establIrshed
by Xitte 9~tissr-d tPhys. Rev. v
in coaduc-,-J-7'.-, lif; 0 0
f lid
st::.

TOR N? kP5012593
sex-,red value of the thermal condbactiv"Ity of the An--cl,, and As~ola, allasaes 13 a lover'
--T ('~V -tekhnichenkiy inetitut I ra. A ',f,-fVvI ATI FIR:,N TAnjr4rrpd
kc
AN SSS",
t !.it
FIT:

1. 21-'1223_66, E!'!T(M)/Et_1PM IJP(C) JD
ACC NR: AP6011494 SOURCE CODE: 0103661661003100TIO28TIMl-
AUTHOR: Ivanoy-OmMys V. I Kolomiyetnj, B. T._,; Smlrnovj, V. A.
ORG: Physicotechnical Institute.-Am. A.- F. loffe- Acadeuq of Sciences SSSR (Fitiko-.
teldR-c-Fe-sEV-fn-ATig-A-ka-d-em-i-i-nau SSSR
TITLE: Spectrum of electromaZne-tolumineacence in
SOURCE: Zhurnal eksperimental'noy,i teoreticheskoy fizW. Pialma v redaktaiyu.
Prilozheniye, v. 3, no. 7, 1966,-28T-291
TOPIC TAGS: in dium antimonide,,radiative recombination, luminescencei spectral-
distribution
ABSTRACT: The authors calculate the spectral distribution of recombination ra-Aia-
tion caused by the magnetoconcentration effect (electromagnetolminescence-5%)
in InSb at room temperature,, Vhich they observed earlier (Dokl. AN SSSR v. 1611
1307, 1965). Recombination radiation was excited by applying a pulsed electric
field to a sample of almost~ intrinsic p-InSb placed in a magnetic field perpen-
dicular to the electric ones The radiation was gathered in a third mutually- 7_
7 perpendicuJardirectionp -guided ta a monachrcmator, - and recorde& vith a phatore-
ceiver oiyoli-doped garmaniumlf~ie pulse duration was 2-3 psee at- a repetition
frequency 2-3 CPs- A puls-e-&-synchronaus detector vas used to increase the
Card 113

L '21423-66
ACC NR: Ap6ol1494.
signal/noise ratio at the output of the broadband amplifier. The spectral width
of the mono-chromator slit 'was 0-3 11 at a wavelerx9th ;f 6 v. The oscillograms of
the sample-current and photoreceiver signal pulses show that the observed-signal
has a very low rise time (of the order of 0.2-0.3 psec), so that the observed Sig
nal can be ascribed to electromagnetoluninescence. EIS spectra of p-InSb with
X jOJLG CIC3 for different intensitiel of
acceptor density 5 the electric and mag-
netic fields E and H chow that, with-, increasing product E x H, which determines. the
concentration of the excess carriers on the crystal face from which the radiation
is observedg the maximum of the emission intensity shifts markedly toward the short-
vave part of the spectrum, and the spectral-band shape and width are simultaneoislY
c#anged..-.-This-.shift,can beconnected with'the appreciable increase ofthe concen-
tration of the excess.earriers.. which fill noticeably the bottom of-the conduction
band.. The shift of the maximum and the broadening of the spectral band, my be- due;
in-additionp- o Mating of the-electron gas under 'the influence of theelectric
t
field
but this heat4ng,of he'electron gas cannot influence notice -the -a
ably ~pec
.note& that In the -analysimof
ra it is -necesgary-ta- take. Anto: accqunt~~the principal ,
inhd=gei*Itj in the
ibuti
diAr on- ct the ct~= . difficulties intail4dAn- sintAtandcus -account
of aLU the foregoing does nart~ permit, at,'present an exact est:Lmate_~-

L 2 149 6
ACC NR: AP6011494
of the density of the excess carriers near the surface from-which the radiation is
observed. A rough order-of-magnitude estimate without acc-~,unt of heating of the
electron gas shows that at =_ Inum-electric and magnetic field there are -10-a
carriers per cm,3 in the immediate vicinity of the crystal face. The authors thank-.
A. Yu. Ushakov for constructing and furnishingthe pulsed synchronous detector.,
OrI97-aF ~.a 3 2 figures and 1 formula., [021
SUB CODE: 2o/ suBm DATE:, loFeb66/ ORIG REF: 0021 ATD PRESS:Y24-1
!-Card 3/3

_.L 25445~6_ EWT M)
ACC NR: AP6009698~ SOURCE COM.UW/0181/66/oo~/oo~/o�O/ 6~
44
'AUTHORS: Kiseleva, N. K.; kolomiyets B. T.
R d
-0 G: PhysInatet'hnical Inatitute JJLM_, a# 1=24AN.SSSR. Leningra
!(Fiziko-tekhnia*heskiy institut AN SSSR)
VITLE: Recombination radiation of gallium an imon e
t id
ZOURCE: Fizika tverdogo tela,, v. 8, no. 3 1966) 967-969
TbPIC TAGS: gallium,alloy, antimonide, recombination radiation,
1--atstribution, radiation.intensity,
itwinningi- p.n,- Junction.--- spectra
crystal- gkonth`-
A6reas earlier: inirestigations'o -mbin- t -~Ecdi tiom-~
:ABSTRACT-- P reco a ion a
,were made in gallium antimonide p-n junctions obtained Uy aMuglon
of Zn in; Te*-doped GaSb of n-typej In the present Investigation the
.p-n junctions were obtained by.growing crystals having one or several
twinning planes from a melt doped.with Te. Such p-n junctions'are
Parallel to the twinning planes and require no special acceptor im-
,'purity. The authors investigated 'he dependence of the radiation in-
;tensity on the current at 377K, tbe~ influence of the State of the
Card
1/2

L 25445-66. -7
ACC NRO Ap6oo9698
:surface of the!_i3ample S,
,A on this dependence at low current densitle
fand the spectral distribution of the radiation at 77 and 300KI The
'recurrent dependence of the radiation intensity has an initial nonlimar
a
section ( Ail a = 1.25 4.3), a linear section., and a sublinear
I I I
section resulting from-the heating of the sample during the current,~-
Ipulse. The coefficient a depends on the surface state. At 77K the
,intensity of the recombination radiation Is 10 -- 15 times larger
ithan at 30OK, and the nonlinearity.is weaker. A-ebange in temperatuml
;shifts the peak of the spectral distribution to shorter wavelengths,
iand an increase to the current density increases the energy In the
isbort wave region of the spectrum. Comparison of the results.-with.
~those by others indicates that the observed radiation bands at 77 and
1300K can be related to transitionsthrough shallow impurity levels
but unique - identif icat Ion of these le vels is as ye t dif f icult 4' The-_ .
thors thank B. V. Tsarer&kQv--for advice during the performance 'of,
t
the work and for a discussion..of the-results. Orig. art. has: '2
figures.
iSUB CODE: .:20/ SUBM.'DATH: o4octo-5j OTH REF: oo6
-,Card 2/2"

74 SOURCE CODE:
AUTHOR: Kolomiyets, B. T.; Lebedev, E. A.
~60
ORG: __.Physicotechnical institute im. A. F. loffe AN SSSR, Leningrad (Fiziko-
na 06
c es na
TITLE: Effect of impurities on the mobility of carriers in amorphous selenium
SOURCE: Fizika tverdogo tela, v. 8, no. 4, 1966, 13,36-1139 11-7
TOPIC TAGS: selenium,, semiconductor carrierj, impurity conductivity, electron mobilit3,P
hole mobilityp carrier 2ifetime., temperature dependence., impurity level
ABSTRACT: This is a continuation of earlier work by one of the authors (Folomiyets,
with To F. Nazarova, M v. 2, 174p 1960) where it was established that glass-like
semiconductors, unlike crystalline ones, retain their intrinsci conductivity char-
.acter independently of the impurity content. The present investigation is devoted
J.
L,o a more detailed study of the role of impurities in the conductivity of glass-like
To this end, a pulsed procedure, essentially similar to that used by
E.,o Spear (Proc. Pbys* Soc, ve B76, 826, ig6o) and J. L. Hoxtke (Phys. Rev. v. 125.,
3.177, 1962), was used to measure the dependence of the carrier mobility in glass-like
seler4um on the type and content of the impurities. The measurements were made on
thin samples, using semitransparent electrodes. An excess carrier density was pro-
duced on one of the surfaces by illumination or Li electron bombardment. The mobility
was determined from the change in charge on the content of the sample. The results I
L 29968-66
ACC NRs AP6012474 0
show that an increase in the impurity content greatly reduces the mobilitYp and that
impurities like As and Te exert a greater effect than So The impurities also affect
the effective lifetimes of both the electrons and the holes. When Te and As are
introduced, the electron lifetime increases, whereas P and T1 will decrease greatly
the electron 3-ifetime- The hole lifetime decreased slightly when P was usedi but
did not change noticeably when S and Te were introduced. Both electron and hole
mobility increased exponentially with the temperature in the range 250 - 3WK. The
experimental results are explained as being due to an increase in the number of
sh&UM and deep traps resulting from introduction of the impurities. Orig. art.
has: 3 figures,, 3 formulasp and 1 tab] A*
SUB CME: 2D/ SUM DATE: 33Ai4;65/ MIG FM: 003/ OTH P": 003
-Card 2/2

L loo88-67
ACC NR: A?6o23368 0
absorption spectra of the As2S03 wore moasured together with the absorption spectra
of the individual components subjected to different purification techniques. The
:) 12.67tk absorption band, which appears in As2Soj, as duo
Wsts have identified tho
to the fonnation of AsnO3 by the oxygen contained in the solonium. The amount of
oxygen cont", nation necessary to produce this band is estimated at 0.01 -- 0.031.
The results have also shown that introduction of the arsenic in the solanium, helps
rid the latter of wxygenp ~ a factor of importance for the possibility of obtaining
oxygen-froo solonium . In addition, the method points to the possibility of nioni-
toring the content of oxygon in selenium by measuring the intensity of the absorp.
tion bands in the spectrum in As2So,3, and the possibility of oliminating o.Vgen-
from selenium by using elements activoly interacting with the o.Vgen. Orig. art.
has; 3 figures.
SuB coDz: 20/
cul.d
SuBM DAM 15oct65/
Ofar, REF: 004/ OTH W: 009
td-NR: AP6030974
SOURCE CODE: UR)0181/60'/Oo8/OO-9_ 2762/2764
AUTHORZ: Kolomiyets, B. T.; Rukhlyadev, yu. V. ~5_9
ORG: Fkvsicotechnical inst
choskiy institut, AN SSSR) itute im. A. F. Ioffej AN SSSRI Leningrad (Fiziko-tekhni- i
TITISs Effect of jLrManium and tin on the photooloctr orties of arsenic
selenide ieprop
SOURCE: FiZika tvordogo telal v. 89 no. 9, 1966, 2762-2764
TOPIC TAGS: selenide; arsenic compound, seniconductor conductivity, photoconductivity
10STRACT: The conductivity and photoconductivity
, of vitreous arsenic selenido con-
taining germanium and tin impurities in various concentrations wore studied in the
6o-18oOC0range. The activation energies were calculated from the temperature depend-
once of the conductivity and the conductivity values at 200C were found by extrapola-
L.
lion- An increase in germanium content uT) to certain values decreases the conduc,iv-
ity and increases the activation e 6
norgy; a further increase of Go contelllu above 10
at- '% and Sn content above 4 at. % causes the conductivity to rise and the activation
energy to diminish. For any Go or Sn contentp the activation energy calculated from
the spectral distribution of the photoconductivity (allowing for the temperature de-
pendence of the change of the forbidden band width) is greater than the activation
energy calculated from the.,Amporaturo dependence of the conductivity, and there is nc

ACC N
ARG032309 SOURCE CODE: UR/0081/661000/010BOU/B06
AUTHOR: Baukin, 1. S.; Kolom!xets, B. T
TITLE : The effect of planes of orientation of the seeding on the growth of single
crystals of alloys indium antimonide with 991-t-W antimonide
46 rk 1 -4 T L'. I .
SOURCE: Ref. zh. Khimiya, Part 1, Abs. 10B426
REF SOURCE: Uch. zap. Azerb. un-t. Ser. fiz. -matem. n., no. 4, 1964,
97-99
TOPIC TAGS: single crystal, growth, crystal growth, indium antimonide
ABSTRACT: A study has been mad e of the effect of flatness of orientation of the
seeding on the growth of single crystals of InSb with small additions of GaSb grown
by the zone growing method. The planes of (111) and (M) of the seeding agent
were first polished and etched in a dilute etching agent CR-4. It was found that
single crystals grown with an iniator. oriented towards the melt with the plane
(111), contained twin crystals, while those with the plane (i i b had no twin
crystals. The obtained single cr
listals exhibited electron conductivity; the con-
centration of the carrier is 3- 10 cm-3, the mobiliky of the carrier is 100, 000
card 1 / 2
:A1_C NR' AR6032309
cm-1 (at^-F200.
cm2/v- sec and the electron conductivity is 138 ohm-1
V. Grishin. [Translation of abstract]
SUB CODE - 07/

ACC NR: AR7000871 S URCE
AUTHOR: Kolomiyets, B, T..; Ly-ubin, V. M.; Mostovskiy, A. A.; Fedorova,
Ye. 1.
TITLE: Electric and photoelectric !properties of some high-impedance semi-
conductor layers
SOURCE: Ref. zh. Fizika, Abs. 9ES96
REF SOURCE: Sb. Elektrofotogr.. I magnitografiya, Villnyus, 1965, 36-47
TOPIC TAGS. semiconducting material, photoelectric effect, photoconductivity
vaporization, high impedance semiconductor layer, semiconductor, amorphous
semiconductor
ABSTRACT: The results are presented of investigations of conductivity and
photoconductivity of a large group of high-impedance photoconductors obtained in
the form of thin layers by vaporization'In vacuum. Layers of As 21 S3, As2Se,,
GeS, As2Se3 and Sb2Se3, and an amorphous layer of Se, and Se with S and As
additions, PbO, phtalocyanine without metal, and a number of ternary semiconduc-
tor materials (AsSbS3, AsSbSe3, mAs2S3.- nAs 2Se3, Sb2S 3. Sb2Se31
Md I / 2
..I:.ACC NRI AR7000871
Most of thel
. ..... GeS Sb2S3, and GeSe AE;2Se3) were investigated.
nlsb 2S3 nBi2S31 arriers, the volt-
n amorphous structure. The sign of current c
'layers have a t kinetics,
d spectral characteristics, photoelectric effec
ampere, lux-ampere. an
nt and photocurrent on temperature, the spectral
dependence of dark curre , and the characteristics of dischargi,,,,.
-absorption coefficient 1 1. sil,~
dependence of the light
-orona discharge,;,z"
beam or ions from a c
processes in layers charged by an electron
it " layers of
haracteristics of the porous
Avere investigated. Also, the main c
ere studied
terials prepared by vaporization In an N2 atmosphere w
numerous ma concept of strengthening
based on the
The discussion of the experimental results is
hous semiconductors.
nt carriers in amorp
the phenomenon of trapping of curre [DWI
v.. Lyubin. [Translation of abstract]
SUB CODE: 20/
2/2
01,
I the Activp

Cominy
.,ATEGORY
A"Drl. jOUR,
AUTHOR
!INST.
:TITLE
01FIG. VJR.
ABSTRACT
Card:
USSR-
Microbiology. General Microbiology. Antibiosts and
Symbiosis. Antibipfics.
RAMOI. P No- 195?o h"%, 1005Z
Kolo nixit
Zaporozhlya Instibite for the Advancement of Physicians
Certain. Properties of Fungi of the Genus PeniciUiurn
I
Tr. Zaporozhsk. in-ta usoversh. vrachey, 1957, 1,
108-1.14
A culture of Penicillium. (No 81) was Isolated from the
soil which possessed -an antagonistic effect on gram-
positive and giam-negatIve bacteria. The titer of the
culture fluid of a 15-day depth -culture on Chapek's
medium containing sucrose (6%) and ammonium
phosphate (0. 3%) was equal to 1:200. A description
and the arrangement of the laboratory fermenter are
presented. The active substance with a titer of 1:3000
with respect to the colon bacillus was obtained by
1/2
KOLOKIYETS, F.S.
Means of increasing tho period of continuous operation of sugar
Plants in the Kuban. Sakh. prom. 32 no. 6:13-16 a 158.
(ruban-Sugar industry) (MIRA, 11:7)

MUTIMITS 0.
Spain - Econmic Conditions
T'Spain, a yankee colony." Felipe M. A-rconada. Reviewed by G. Kolmiyets. Bolshevik 29,
no. 16, 19'z2.
9. Monthl List of Russian Accessions, Library of Congress, Dec,,~ber 1959 Uncl.

L 02969-67 ---.~qTAO)/FSS-2/EdT(1)11~r-.ivT(m)LEEC(k)-2 GVV/?1S-2
VC NRt AT6032437 SOURCE CODE: UR/3133/66/000/009/0157/0161
AUTHOR: Fialko, Ye.fr.; Moy8yaj Re 16; Kolomiyets. G. io;
V. I.; Chumak, Yu. V.,'
Uil~versiq (Kiyevskiy gosudarstvennyy universitet)
ORG: Kiev State
TITLE: Statistical characteristics of radio echoes from sporadic-
meteors
SOURCE: AN UkrSSR. Hezhduvedomstvennyy geofizicheskiy komitat.
Informatsionnyy byulleten'. no. 9, 1966, Geofizika i astronomiyal
157-161
TOPIC TAGS: radio echo, meteor trail
ABSTRACT: The results of radar observations conducted on 29 October
1964 during a period in which intensive meteor streams were absent
were used to construct statistical characteristics of the distribution
of meteor radio echoes with respect to amplitude and duration* The
radar system used had the following basic parameters: A - 8.7 m; pulso
power, 10 kw; pulse period# 10 usec; pulse repetition rate, 500 pulse/
sec;:sensitivity,, "N' 5 uv. The four-element receiving and transmitting
Yagi antennas were located at height h - X/2 above the ground. The
492 radio echoes selected for constructing the statistical character-

L 02969-67
0
istics included 56 for unsaturated.76 for Lntermadiate,and 360 for
saturated meteor trails. The -integral distribution of meteor radio
echoes with respect to amplitude and duration is illustrated.in-Figs.
and 29 respectively. The.value of parameter a was determined by several
approximate methods for a wide range of masses of meteoric bodi *as by
using radio reflection* from the trails. Parameter a had a sporadic
kit
Z6
2.4
2.0 Fig. 1. Integral.amplitude distribution of
3
meteor radio echoes
14 1 - General integral amplitude distribution;,
2 - reflection from maturated trails;
1.2
3 - reflection from intermediate trails;
4 - reflection from unsaturated trails
A
44
~A Ik
a2
0 at a? 43 a4 as 46 Va8 a9 W lq(W,
Card

iT76-0
3
d"
4
t9#
Z4
Z2
4
2.0 -pig, 2o Integral distribution of the
~durstion of Taeteor radio echoes
ibution;
:1 - General integral distr
t4
1,2 2 - reflection from saturated M11181
3 -,reflection from intermediate traLISIS
40 4 reflection from unsaturated trails*
a6
a2
-42 0 42 0A 46 484tsw
-L4 --L2 -40 -0 'M -0
nois.evalue o.f.2. 0-2 25 which was in.agreement with previous deter-
minations, Orig. art: halss 5 figures.
SUB CODES 03. SUBH DATES none/ ORIG REFS 007/ OTH REFS 003
IATD PRESS: 50919
_A'M-MR: AR6035202-
SOURCE CODE! UR/0269/66/000/009/0048/0048
AUTHOR: Fialko, Ye. Y4 ## MOYSYat Ra L, Melfnyk. V. I.; NqlqMiy 1 6
Kolomiyets', A. R.; Yemell ~e _. 4r.'_ I,-
YanOv, 1. M.; Shultha. A. I.; Yavlinslk~y, A.'Ya.-
TITLE: Radar set for observing the drift of meteor trails.
SOURCE: Ref. zh. Astronomiya. Abs. 9. 51. 411
REF SOURCE: Vianyk un-tu. Ser. astron., no. 7, 1966, 69-74
TOPIC TAGS: meteor trail,, radar antenna. radar meteor observation, train drift
ABSTRACT: A description is given of a radar set designed at the Department of
General Radio Engineering. of Kiev University and which is intended for measuring
the velocity and direction of the drift of ionized trains. The basic Parameters of
the'equipment are as follows: frequency 34.47 mc; transmitter Pulse power 100 kw;
Pulse duration 1Qe,&sec; sending frequency 500 cps; each fifth pulse is doubled;
receiver sensitivity ^j 3,,&v,- receiver passband 600 kc. Identical type wave-duct
five-element antennas are used for reception and transmission measurements of the
drih velocity radial component in carried out by the pulse-coherent method. The
1/2 UDC: 523.164.85

ACC NR
AR6035293 SOURCE CODE: UR/0269/66/000009/0046/0048
G.
AUTHOR: Moysya, R. L; Kolomiyets',,K I.; Mellnyk, V. 1.
TITLE: Recording the velocity and direction of meteor trail drifts
SOURCE: Ref. zh. Astronomiya, Abs. 9.51,412
REF SOURCE: Vianyk KWvalk. un-tu. Ser. eatron.. no. 7, 1966. 75-78
TOPIC TAGS: meteor, meteor trail, meteor trail drift, coherent pulse method
ABSTRACT: At pre3ent, the coherent pulse method used in radar measurement of
meteor trail drifts usually employs the recording reflected signal method, in which
two beams of a cathode-ray indicator tube are used. One of the pulse sequences
is obtained with the aid of reference voltage, whose phase is further shifted by
90% A method is proposed in which both pulse sequences are recorded with one
beam. The phase shift of the reference signal by 90* to effected at the time of the
reception of a reflected code pulse or one of the pulses of the basic sequence (e. g.,
each fifth pulse). Block diagrams of the equipment and a sample of the recording j
of a reflected signal are given. V. Lebedinets. [Translation of abstract) ISPI
SUB CODE: 03/
CWj UDC: 523.164.85
L-08642-67- MqT(1)/FSS-2 _0W/WR

KOLOMIYETS, G.K.
Brightness distribution over the daytime cloudless sIq in
the ultraviolet spectral-region. Trudy Astrofiz. inst. AN
Kazakh,SSR 4:80-84 163. (MIRA 16ill)

Device for determining the concentration and el2s of natural
aerosols in the'troposphere. Izv.Astrofix.inst.AN Kazakh
SM 110-11-1.15 !61o (VIRA 4:3)
(Aerooolo--Measurement)
(Atmosphere)

KOWMIYETS, G.T.
Artificial insemination is the best wav to eliminate sterility in
cows. Vaterinariia 35 no.2:72-58 F 158, (MIRA 11:2)
1.Starshiy vetvrach Ozhidovskoy washinno-traktornoy stantaii,
Livovskoy oblasti. ,
(oaessa District--Artificial insemination)

L 04097-67 EWT(1)IFSS-2 GW/WK I
ACC NR& AR60232B8 SOURCE CODE: UIVO058/66/000/003/HD57/1057
AUTHOR: Moma, R. I. Xblomiyets.%-H. 1. ; M2~k -- V. 1. 7
TITIE: Some results of radar observation of meteors at wavelength X 8.7 m
SOURCE: Ref zh. Fizika, Abs- 3Zh398
REF SOURCE: Deyaki rezulltaty radiolokatsiynykh sposterezhen' meteoriv na dovzbyni
khvyli X - 8,7 m. Visnyk Kyyivslk. un-tu. Ser. astron. no* 6. 1964,9 111-114
TOPIC TAGS: radar meteor observation, meteor trail, radio echo \-/
ABSTRACT: Results are presezr%id of trial observations of meteors carried out with
the aid of apparatus construct,):l in the Gneral Radio Engineering Department of the
Kiev Univers The apparatus makes it possible to measure the velocity and drift
direction of the meteor trailsAhe velocity of the meteoric particles., the slant
range to the trailj the time 0 'appearance of the meteor, and the amplitude and dura-
tion of the meteoric radio echo. The main parameters of the apparatus are: pulse
power 100 kw, wavelength X = 8.7 m, receiver sensitivity 3 - 5 gv. A brief descriptio
is presented of the block diagram of the apparatus. Results of observations made on
27 - 28 May 19& are used to construct the statistical characteristics of radio mete-
ors. An estimate of the directivity pattern of the antenna in the vertical plane is
obtained from the alant-range distribution of the radio meteors. The maximum antenna
radiation is at an azigle 0 - 210. The distribution of the radio meteors by velocities
and the distribution of the. amplitudes of the radio meteors are presented. Data are
2

I -,' ,- ... ~*,.,dlb;.

KOWMIYETS, I. [Kolomiietal, I.]. inzh.
It mows and binds. Znan.ta pratsia no.6:10 Jo 159.
04IRA 12: 11)
(Ramesting nwhinery)
I
.1
I I

KOL014IYETS, I.A.
"'0",
Formation of reproductive organs In apple tress* laukesspe
Kiev.un. 8 no.5:71-90 149. (KM 9t10)
(Apple) (Plants. Sax in)

1. KOLOMMTSt 1. A.
2. USSR (600)
4. Fruit Culture
7. Stage of readiness for fmitbearing and the period preceding it in fruit
tree seedlings. Izv. AN SSSR. Ber. biol. no. 3,, 1952.
9. Monthly List of Russian Accessions, Library of Congress, JandarYs .1953. Unclassified.

Fertilizers and N,anures
Effect of m4neral fertilizers on the formation of repreductive cr,--ans in yc-,m_, appie trees.
Bot. zhur. 37 no. 4, 1952.
9. Monthl List of Russian Accessions, Library of Congress, Uovember -1951, Uncl.
2

Apple
94, No. 41 1952i
Biological analysis of development of buds in apple trees. DoPl. AN SWR
9., Monthl List of Russian Accessions, Library of Congress, Cetober 195 it Uncl.

KOWMIYETS, I.A.
'Conditions for floral and propagative bud development in the
apple tree. Trudy Inst.fisiol.rast. 8 no.2:361-397 154.
(MI2A 8:5)
1. Ukrainskiy nauchno-isel-adovatellskiy inatitut plodovodstva,
g. MOT.
(Apple)

KOLOMIYETS, I.A. "The BioloF-y of Deve-,lopm-ent of th-e ary."
the Feriodicity of Frult-1:r.~rin.f, of A7~ple T're,7!!S." Acpl
3 c i US S R .Inct of Pltmt 11,pdolof,y imeni K.A. Timli7zazev
Moscow~ 1956. (Dissertation for the Degree of Doctor in
Biological Science)
So: Knizhnaya Letopis', No. 18, 19563

KoLdpq iyE-r~ J, j
Plants - ft-uk'us.

Lb s Jour 44275
IL-f ;Ln~ - Biol.., 110 10, )-;'5',
Autaor Kolo
L-15,*~- 'LR=aii-Z,-an Sci=tific I:isiuitutu for Pruiw-'C, -naisinG-
Tit-lc !?~~rioCLiciicy of -Fruit D=inj; and a ilethod of Ov--,rco1AL,[; I-'U-
Orig PWo U:os'..c';.arstvo i g~adinar-.".xo, 1956) v0 51 31-34-
Abstract Zt,; wor", vas conduct-,eL i--a 1).Arsiolosy, labovn:~ory of
~---,u Ulwain:., Scicn:Ufic Listituto of rrui*'., 'I'laisial,-
-,:~Q basic cause of ;S dissil-,dlm- fO2.-,.Iv"io-' of
flou,:r buds during zgcc; of th,~: -Lrc,.;s. On
yoim~; only a part- of -'.L,~ ~Xcwtub- points forns,
A,1017ors "Ouds. Thcru--:-,Or,~ Yolul~; -~ruus bloom nodcza-u"-dy VLYI~
"i t" .10,
buar fruit uvory rar. a.-,ing.traos form .-'i- I- I~r
ouds at, a greator uuLf,)~:r of p:mr~ll points. ThQy blozuoru
Card 1/3

USSR/Cultivated Plants. Fruit Trees. &n11 Fruit Plants. m
Abs Jcur; Ber Zhur-Diol-~'No 17, 1958., 77825.
Author
Inst
Title Physiplogical.Effect of Pruning.
Orig Pub: Bad i ogorod, 1957, Wo 12,34-36.

Abstract: In the.UkraWan Scientific-Research Institute
Of Jlorticultt~An-the Wing of 1952, prunine'
was conducted or fertilized and non-fertilized
Dorovinki young trees and)(alivilya anaw adults
with cutting of thebranches and shortening of'
the one-,and two-year.growths by I and 2/3 of
their.length. Determination of the content of
water in the leaves and sprouts and the bioche-
Card 1/3

M
USSR / Cultivated Plants. Fruit Trees. Small 1,41 7
Fruit Trees.
Abs Jour: Ref Zhur-Biol., 1958, No 16, 73117.
Author ; Koloiiyets 'I I. A- -
Inst :Not given.
Title :Significance of Shortening Branches by Pruning
Trees.
Orig Pub: Sad i ogorod, 1958, No 2, 46-c0.
Abstract: No abstract.
Card 1/1

KOLONUETS, Ivan Afannalyevich
[Overcoming the periodicity of fruiting in the apple tree]
Preodolania periodichnosti. pladonosheniia iabloni. Kiev,
Gos. izd-vo sellkhoz. lit-ry U5M, 1961. 299 p.
WERA 15: 5)
(Apple)

KOLOMIYETS I.A doktor biolog. nauk
Phasic development of peach seedlings. Agrobiolo.gila no.6:896-903
11-D 64. (140-4 18:2)
1. TSentrallnyy respublikanskiy botanicheskiy sad All UkrSSR, Kiyev.

KOLOMIYETS, I.D., inzh.
Some considerations concerning the evaluation of the track
condition. Put' i put.khoz. 7 no,9tl4 163. (MIRA Milo)
1. Nachallnik Poltavskoy distantaii puti Yuzhnoy dorogi.

~OMIIETS I. D., inzh.
Need for a more accurate evaluation of track conditions. Put# i
put. khoz. 6 no.8:16 162. (MIRA 15:10)
1. Nachallnik Poltavskoy distants1i Yuz%,noy dorogi.
(Railroads-Track)

KOLOMETS I.D. Elrblomiietat, I.D.]; SMIMOV, A,A*
Theory of the reoidualresiotivity of a binary disordered alloy
of periodically varying composition. Ukr.fis.zhur. 7 no.3-1:3-195-
1204 R 162, (KM 15,12)
1. Kiyevskiy gosudarst7emyy universitet im. Shevchemko.
011078.) (Blectric resistance)
I
1)

KOLOMIYETSY I.D.; SMWOVt A*A*
Theory of residual electri6 resistivity in disordered binary
alloys with periodically changing composition. Part I., Fiz.
met. i metalloved. 14 no.10-9 J1 162o (MM 15,.7)
1. Kiyevskiy gosudaretvemyy univeraitete
(Alloys-Electric properties)

KOLCMIYETS, I.D.; SPODENSYK0, I.N.; STEBLYUK, A.P., inzh.
Laying of switches by the push-on method. Put' i put. khoz. 9 no.2-
12-13 165. (MIRA 18M
1. Nachallrak P~,Itavskoy distantsii Yuzhnoy dorogi (for Kolomiyets).
2. Zameatitelv,n;achallnik,a-Poltaffskoy distanstsii Yuzhnoy dorogi. (for
Spodeneyko). 3. Poltavs-kaya distantsiya, Yuzhnoy dorog-L (for Stablyuk).

S/126/62/014/002/001/018
.14,7 90 E032/E514
AUTHORS: Kolomiyets, I.D. and Smirnov, A.A.'.'
TITLE: heory of residual resistivity of a binary
unordered alloy with a periodically varying
Composition. 11
PERIODICAL: Fizika motallov metalloy.edepiye, v.14, no.2, 1962;
-161-164
TEXT: Part I of this paper was given.in v.14, no.1 of this
journal (pp 3-9). Part V~was, conc 'erned with the residual -
resistivity of a binary unordered alloy whose composition varies
sinusoidally in one of the coordinates. 1j, the present 'paper-
this Is generalised to the case where the c oncentrations of the
components are arbitrary periodic functions of one of the
coordinates. The calculations are based on the same assumptions
as in part I. It is shown that.the expression for P 0 is
A (8)
eo [co (I c0)
A A
where A is a coefficient which is independent of the composition,
I
Card 1/2 W-l bEL6C1F_)) FOR 45.ST1MC7'1,9A1

_ZrW-
KOLOMIYETS, I.D.; SMIRNDvp A.A.
Theory of the eledtric resistance of alloys vit~iperiodicajly
changing constitution and ditree of long-range order. Fis,zetj
metalloved. 15 no.3s321-326 Mr 163. (MA 164)
1. Kiyevskly gonWarstvennyy universitet imeni T.G.Shovehenko,
(Alloys-Electrio properties) (Crystal lattices)

KOLCMIYM , I.D.
Re&ato of the experimental trips of the track-Me8auring care
Putt i put. khoz, 8 no.1104-37 164 (HM 1822)
1. NuchallnJk Poltavskoy diatantaii putiq Yuthnoy dorogi.

MARTYNENKO, Ivan Ivanovich; DOROSH, I.Y.; KISTENI, G.Ya.
(Kystenl~ H.R.]; KOIDMIYETS'. I.F.[Kolomiietal, I.F.];
LEVITSKAYA, G.P.rCe-vyts'ka, H.P.], red.; GULENKO, 0.1.
(Hulenko, 0.1.], tekhn. red.
[Use of electric power on the "Shlinkh do immunimu"
Collective Farm] Vykorystannia elektroenergii v Irolhospi,
"Shliakh do komunizmu." Kyiv, Derzhsilthospvydav UBSR,
1962. 58 p. (Y-IRA 16:5)
(Electricity in agriculii,-.-e)

_gMilcL -XAROSHE;VSKIY, K.P.p red.; OSOVSKIY,
KOWM=S ~ Iy~q vic4
---A.T.-O-iekhn. red.
[Socioeconomie relations and social movements in Transcarpathis.
in the socond haill' of'the 19th contury]Sotsiallno-ekonomichoskie
otnosheniia i obshchestvennoe dvizhanie v Zakarpatle vo vtoroi
lovine XIX stoletiia, Tmsk,, Izd-vo Tomskogo univ. Vol,l.
A;Tculture and agrarian relations]Sellskoe khaziaistvo i ag-
r
rarnye otnosheniia. 1961. 493 P. (MIRA 15:9)
(Transcarpathia-Economic conditions)
(Transearpathia-Land tenure)

KONDRATYUK,Ye-M.[Kondratiuk,, IE.M.), otv. red.; BjLOKJI',' I.P.,
zam. )tv. red.; BURACHINSKU, O.M. [Burachyn5l~~"'--" o""!.32
red.; ZHARENKO, N-Z., red.; 1~)QMkM
1.0.], red.; KOKM40, M.A. red.; KHARKEVICH, S.S.[Kharkev,
ych,
S.S.1, red.; CHOPIK, V.I.tGhopykp V.I.Ij red.; KASIYAIT, S.M.,
red.
(Acclimatization and introduction of nevi plants] Aklimiati-
zatsiia i introduktsiia novykh roulyn. Kyiv, Naukova dumka,
1965. 221 P. (MIRA 18; 5)
1. Akademiya nauk URS11, Kiev. Botanichnyi sad.

USSR / Cultivated Plants. Fruit Trees. Small Fruit M
Plants. Nut Trees. Tea.
Abs.,Jour:.~ Ref Zhur 6.:Biologiya, No 6, 1959, No. 25041
X010 'I
Author. yets'I-I~ P.
Inst Not n
Title t Concerning-the Ghange-Oirer Of Apple Trees
from:.Feriodie'to--AnntiAl'Frult-Bearing
Orig Pub Byul. nauk.-tekhn inform. po sadivnytsttrut
1957,-No 4, 19-24~
Abstract i It was established by the Laboratory of
Plant Physiology of the Ukrainian Scientific-
Research Institute of Fruit-Bearing that for
the liquidation of the periodic fruit-bearing
In the orchards of the Ukrainian SSR's
forest-and-steppe zones, it Is necessary
completely to satisfy the plants in an
Card 1/2
161
USSR cultivated Plants. Fruit Trees. Small Fruit M
Plants. Nut Trees. Tea.
Abs Jour : Ref Zhur - 131010giYap No 6, 1959, No. 25043
I. P.
Author : Kolomlvts
InBt : Not-g-1ven
Title : Acceleration of Pruit-Bearing by Apple
Seedlings
Orig Pub : Byul. nauk.-tekhn. inform. p0 sadivnytsvut
1957, No 4, 54-56
Abstract : Hybrid apple seedlings bear fruit in the
8-12th yearp and'some only on the 20th
year after planting, although its genera-
tive maturity sets In on the 3-4th year.
They are not bearing fruit as a result of
the absence of necessary nutritive condi-
tions, To accelerate fruit-bearing$ an
Card 1/2
162

Kp,-m;,,m+Z, pul Stf-40;~- G I, 0 ro-.6ra Ineode aseaki kllf:-
Gil reiUl i *!a CC h tgj~'. P,pl- 6y Rtf. A.
ulkk~ arc a &vt~d a tht! fm.t tbAt
we4thtr by ttv.1 c2r; (A pat~,~~octk; failur-a ta 404c 4W gtZO*'O'l td Climatc,!(-gy
.vt,3 tbi;vch U~-: 6-4441~.ia witri ai. um~- ti..-
-e. 'Ac~ Uth~ct qfcF~ MA-M Stlf'6'~
5viodic vzdat~ut VmWlf. 1'4~
lmgam,ml,
wpecLgy krvula ptem. Suk&a, lfw4ixg. 1. L Nil
~~7,T

H 4mqKs- Ve - - - -- - - - - - - ---- -- - ---- - - - - - - ---- -- -- ---- - - - - - - - ----- - -
Reply to K. V. Kolomiett& ad G. L Shpillberg's article "On the now
method of tqgienic evaluation of climate." Kh. A. Nikogosian. Gig.
i san. no. 3: 19 - 21 Mr 153

KOURY= f T
Operpitional characteristics of the bioclimatological service In
health resorts of the Ukralml&n S.S.R. %rudy Uk-..NIGNI no.3.192-9?
(MM 9!10)
1. Ukrainakly nauchno-iseledowatelleldy Inatitut bmrortologit.
(Ukrain'e-Realth resorts, iktarlu4;placsq, dtce) (Ukraine-Ollmto-

KOLOMIYETS, K. V. Doc Biol Soi -- (diss) "On the effect of temperature,
humidit35 and circulation of air (taking into acaount solar radiation) upon
the integument and heat perception of healthy --
stimulation)." Odessa, 1958. 24 pp vdth graphs (Acad Med
Sai USSR), 500 copies. On title page 4uthort V. K. (1) Kolomiyets. (KL, 14-58, 111)
-31-

'-KOLQgYSTSv K.V. (Odessa'
j
V
Oz*9 more on weather classes in their introduction into bealth
resort practicee Vop, kurop fizioter, i lecho fiz, kulft. 26
no, 2:173-174 Mr-Ap 161, (MIRA 14:4)
(CLIMATOLOGY, MEDICAL)

KOLOMIYETS, K.V.; SHPILIBERG, G.I.
Possibility of the use of cybernetics in climatic therapy.
Vop. kur. fizioter. i lech. fiz. kul't. 28 no.5:403-404
S-0 163. . (MIRA 17:9)
1. Iz Ukrainskogo institut-a kurortologii i fizioterapii (dir.-
dotsent F.Ye. Kurkudym).

AM10H. Fanovko, V. M., Engineer
KOLOMI ET5
TI1ft1-,: 'All-Union Conference on the hardfacine of dies for hot and cold
prona-forming
I'MODICALs 8varochnoye proizvodstvog no* 3, 19631 44 45
M The First All-Union Scientific-Technical Conference on hardficing
or dies was held at'Volgograd from November 27 - - 29, 1962. The Conference heard
the following reportal 11. T. ProsviroV (VNIIM1ASh) on "Operatio .nal conditions
and the type or forging di-e3-t-17 77 Pozdnyalcova MIMASh) on 'Troblems~ of the
durability of dies and prens-forming steals"; V. A. Popov, 011101ASh, on some
structural peculiarities of carbide tools for cold extrusion and upsetting;
I I Frumin~ D. V. Danilichenko (Inotitute of Electric Welding imeni Yo. 0, Pa-
to~non "Electric-aloe hardfo'~ing of-somo dies"I L. Kolomiets (IE3 imeni Yo. 0.
Paton) on "Reconditioning of dies by electric-alag hardfacing"; V. A. Timchenko
(ITM imcnl~Ye. 0. Paton) on !'A machine with program control for automatic hard-
rdeing of rorging dies"j Reporta*on manual arc-hardracinG of dies,were delivered
by 11. V. Popov fVolgograd Tractor Plant), V. M. Ponovko-and Ye. 0 -BI __ I- hkin-
00
_ik Tr
(M6-sc_ow_Vp-erimental Welding Plant) 0. D. Superko (Chelyabfn factor Plant),
N. I. Nikolko (Ural Heavy Maahinebuilding Plant),-- SA V ("Rostsol-maah"),
11. 1. Kuzovkova (OAZ), Yu. P. zaytaqv (r.NIMASh), V.
.I, Il gin (ZIL), Gopovin
_(&_r_rRoF*,T~_et ofiakhte-fP ~Plant ~,and otherd. In a decision the Conference
mentioned deficiencies connected with the atAbJect, i.e. lack of unified else-
trodesi or centralized ~produotionj of unified tachhological instructions on
the h~rdfaoing of dies; j of methods for evaluating the quality of hardfaced
metal, and lack of high-~q4ality electrodes for bardfacing cast-ir'on dies. The
Conference decided to take steps in order to eliminate the aforementioned defi-
cienoieo

A,\ I 7-S
IVAMV, V.YE., Z=Mar, V.1p., mumvs M.O. MLWM. L-D.
Xlyi
Impragnatlan of GrspMte with Uquid Si~ccn in a vaamvo
Report antatted for the Conference on Sm *&clear Naterials Tachmlmm

-M-Mit i
Wr
FORM
g

1,5go-66 swliw/ (M)l __jD/ JG
_TLEW06f
ACC NRt AP6002665 SOURCE CODS: UR/0126/65/~20/0'06/0860jO863
AUTHOR: Kolomiyets, L.. D.;;' Khorenko, V. K.
ORG: none
TITLE: Oriented growth of oxide film on beryllium
SOURCE: Mika metallov i*metallovedeniye.,v. 20, no. 6, 1965, 860-863
TOPIC TAGS: metal oxide, beryllium, oxide formation$ crystal growth, metal diffusion
electron diffraction analysis
ABSTRACT: The structure of-the oxide film growing on the surface of nontextured poly-
crystalline Be was investigated. 99.98% p ;gs vacuum-evaporated onto a glass
~re
substrate dusted with-rock splt. Film th cFn s measured by the optical inter-
ference method:.and found to-be 400-600 K. The films were removed'in distilled water,
trapped on electrolytic Ni meshes and placed itt an electric furnace. Oxidation was
performed,in air at 400, Sao, 600, 750 and 800*C, Prior to the oxidation an electron-
-diffraction examination of -tive -films-revealed no texture- (preferred orientation).-------.-
Following the oxidation, electron diffraction patterns of the oxidized Be films were
taken at various angles from O,to 601 with respect to the electron beam in order to
detect the texture maxima. For.comparison, the structure of oxide films was also eV'A -
mined on massive vacuum-malted or hot-pressed specimens of Be. Findings: the oxide
-Card 1/3 UDC: 539.23:541.45+546.45

_XF6_002665
ACC NR,
film on condensates and bulk specimens of Be displays preferred orientation through-
out the temperature range from.400 to 800*C. At lower remperatures, when the diffu-
sion rate of Be ions in the oxide film is low, the process of formation of the o2ildiv-
film on Be may largely be determined by the chemosorption of oxygen on the oxide
surface and the interaction between Be Lons.and adsorbed oxygen. it may be assumed
that in such cases the orientation of, the oxide film coatinA Se is associated with
-the-preferential-alig=ent-of--the planes wi h-the--reatdX packing density of
BeO_._
oxygen ions parallel tothe surface of the specimen. The oxidation rate of Be in dry
gases at.elevatedtemperatures is in all likelihood determined by the diffusion rate,
of metal ions in the BO film.-This is Implied primarily by the ratio between tho
sizes,Qf the ions_o~ =gen r0 -.1.32 and beryllium rBe = 0.36 as well as by thefact
that BeO is a semi no'ctor with cation conduction. As the oxidation temperature in-
cr f a increases.
eases, the 4 on rateof Bo.ions in the oxide film Considerina that
Jiff
noncubic crystalsilie characterized by-anisotropy of diffusion rate, the growth of
BeO crystal-particles in different directions may occur at different rates. Under
these conditions, as the oxidation temperature increases, the type of texture of the
oxide film may vary, as had indeed,been observed in this study which showed that
oxidation at 400*C produces A mixed texture of two types, (0002) and (161-3), whereas
oxidation at 500-800*C produced a texture of the (1013) orientation alone. Contrary
to the findings of J. S. Kerr and H. J. Wilman (Inst. Metals, 1956,-84, 379) the.
presence of these textures cannot be attributed.to epitarial growth, since both
I Card 2/3

ACC NR, AP6002671
duce s_H by eliminating the-domain-boundary-'consolidating,effe4~t-of LOS.but.-it,lead
~c . 0-
to the rise of a magnetic texture where the.preferred orientation of the~miignetiza-.~
tion of domains is.parallel to the H field. The fact that H after quenching is'
greater in every.direction of the sAcimen than after TM i9dicates that 'the disor-
dered state-in itself is-not--a-cauae of the enhancement of magnetic properties in
alloys with order-disorder transitions-, contrary to what had been thought previou3lv,
atment is conditioned entirely (or chiefly) b'
and that the effect of llpermalloyll_ tPdj y
the suppression of LOS during - this - ftearment. The attendant investigation of. the ef -
feet of M on monocrystalline C330kfertosilicon steel did not produce unambiguouss rree
sults, possibly because of the -dissipation of magnetostrictive stresses. It is worth
noting that practical applications may be found for the isotropic decrease in H fol-
lowing TMTR. Orig. art. has: 2 figures..
SUB CODE:-.11, 20/ SUBM DATE: 26Dec64/ ORIG REP: 006/_ OTH REP: 005
-magnetic alloy,
L
ord 3/3

ACC NR: AP7010681 SOURCE CODE: UR/0089/661021/003/0192/0197
.AUTIIOR*. Zelonskly, V. F.; Itunchenko, V., V.; Royonkop N. M.Flomiyetso
(Deceased); Stultalov, A. 1.
L. D~
ORG: none
TITLE: Texture distribution -along cross section of alpha-and gamma-deformed
and quenched uranium rods
SOURCE: Atoipnaya energiya, v. ?1,, no. 31, 1966'192-197
TOPIC TAGS: x ray analysiss uranium, uranium property, particle c!-oss
section, nuclear section
SUB CODE: 11,07,18
ABSTRACT: Roentgenographic analysis of texture distribution along the cross
soction of Ci - and -deformed and 6 - and 'Y -phase quenched uranium rods
showed that the distribution density of P poles (hkl) and (~x growth Index
vere, functions of mechanical and thermal treatmentse Orig. art. has: 6 figures.
ENA
Card UDC: 548
S"39*543.4

Myoh4moglobinuria of the tpe found in the residents of lake
Yukeovskoye region. Trach.delo no.2a143-2." F 16"26 (MIRA 168155)
1. Zolocherskaya rayonnaya bollnitsa Khar2kovskoy oblasti i
kafedra propedeyticheskoy terapii (zav. - doktor med.nauk
Yu,D, Shul2ga) pediatrichaskogo fakvll-ueta Kharlkovskogo madi-
tainskogo institutae
(MIRARY ORGAW-DISMES) )-FOOD POISONING)
(=DCHLV DISTRICT (KHAMW PROMM

?MASE I BOOK EXPLOITATION SOV/50T8
Akadewlya caulc URSR, Xlyev. lostytut alektrQzvsrwyuvannys
YnedrenIr oovykb sposobov ovarict v prowy;hl n aboralk fitatey.
4 nost
COX
v". (Introduction of New Voldin ads in Industry;
g .
lection of Articles. v. 3) Klyev, Gas. Lzd-va t4kbn. 11t-ry
QirSSR, 1960. 207 P. 5,000 copies printed.
Sponsoring Agencys Orden& Trudovogo Kraanogo Znamenl Inatitut
olektroovarki Iment akadenlim To. 0. Patons, Akadeall nAuk
7crainalcay SSE.
Xd.3 R. FI*&rQniCO)'UCh. Id.1 S. V1AtU5GTlPh.
FURFM: Thin collection of articles in intended for Personnel in
the welding Industry.
COVERAC11% The articles deal with the ~~=bined experlences of the
Institut tlektroovarki Local To. 0. Patonm (Electric Welding
ImtItuto Iment To. 0. Paton) and several Industrial enterprises
In solving scientific " engineering problems in welding
technology. Probleas in the application of now methods of we
~
..d.
cbanu*d welding and olectroslag welding In Industry are dlsc
ftis Is the third collection of articles published under the same
2he Foreword "A written by B. Ye- Paton, Academician of
title.
,
the Acadstay of Selacces Ukrainian SSR and Lenin prize winner.
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(Gurlev Province-Padking, houses-lquipmentead supplies)

KO;QN~PTS, Map* Cand Geo-a S(-%-i -- (diss)
t"Foltavskaya Oblastj" (Economic- geog Qh"4Qte=*-"i-e0)
Kharlkov,1958. 15 Pp. (Min of Higher Education UkSSR. ICharlkov
Order of Labor Red Banner State Univ im A. M. Gorlkiy.) 150 copies.
(KLO 8-58, 100
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