SCIENTIFIC ABSTRACT KONOTOP, V.V. - KONOVALENKO, B.M.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000824320015-6
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: December 30, 2016
• Document Release Date: June 19, 2000
• Sequence Number: 15
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

L 03782-67
ACC NRI AT6028562
minimum pressure zone, a compression ratio of 44 - and a prensure drop of 340 can be
obtained. The overall results indicate that the operation of a conventional ejector
can be substantially improved by installing a central tube for the lo"ressure gas.
orig. arg. has: 12 figures. I IPVI
SUB CODE: 211 SUBM DATE: 06Apr66/ ATD PRESS: \S-Ob
Card 2 /2

ACC NRt A-L6008853 SOURCE CODE.- Woooo/65/ooo/oco/ol3VO1461
:AUTHOR: Fertik, S. M.; Taller, Ye. G.; Konotop, V. V.; Linetokiy, V. Ya.; Gladkov, V.
S.; Goliushkoo G. M.
IORG: none
i
jTITLE-, Design of a capacitor bank with stored energy of 625 kJ for the production of
Istrong magnetic fields
'iSOURCE: AN UkrSSR. Magnitriyye lovushki (Magnetic trax;). Kiev., Naukova dumka, 1965,
1137-140'
TOPIC TAGS: electric capacitor, electric capacitance, electric inductance, electric
power source, electric network/ MIMS-lvc4pacitor
ABSTMCT: The article describes the design and final construction of a capacitor bank.
rated 625 kJ and intended to operate at four different charging voltages (50) 130, 200
and 250 kv), with much larger operating life than earlier designs (not less than
~200 000 discharges as' against 2000 - 5000) and with low total inductance. The main
stages of the development consisted of designing a special capacitor (type M:S-1),
rated 10 jF (12-5 M, and a special system of interconnecting and switching the
'capacitor bank, consisting of special discharge gaps and various high-voltage coaxial
cables. Problems involved in stacking the capacitors into columns, mechanical strength"-
land safety during discharge are also discussed. Orig. art. has: 4 figures, 5 for-
mulas, and 2 tables.
SUB CODE: Oq/ Sum DATz: 2ooct65
I-Card V-3.

ACC NR, AT6008854
SOURCE CODE: uR/OOOO/65/ooo/ooo/o147/ol56
AUT11OR: Konotop, V. V.1 Gladkov, V. S.; Nemchenko, Yu. S.
;ORG, none
I
~TITLE: Investigation of the operation of a capacitor bank with stored ener 625
k
using a physical model gYA
SOURCE: AN UkrSSR. Magnitnyye lovushki (Magnetic traps) - Kiev, Naukova dumka, 19 5,
j147-156 6
j TOPIC TAGS: electric network, test model, electric capacitor, differential equation
,ACT: The authors describe a model conutructed to simu te the low-inductance
la
iABST7,
i capacitor bank described in a companion paper (Ace. Nr. AT6oo8853) - The equivalent
circuit of the battery consisted of 99 reactive elements, so connected that the order
of differential equations to be solved is reduced to 29. The purpose of the test was
to check whether the capacitor bank is correctly connected (the switching elements
~installed in the proper places), to determine the voltages that can occur in the
Icapacitor-bank elements during normal and emergency conditions, and to assess the ef-
ifect of different lengths of the interconnecting cables on the operation of the bank.
'Low-voltage capacitors (KBG, KSO.. and KTK) were used in the model. The coaxial cable
Nas replaced by artificial lines with lumped constants. Tables showing the character-
jistics of the different circuits and oscillograms showing the results of simulated
Itransient tests are presented. The emergency conditions simulated wre a short circuit
V2

j,-A'.,C._ NR: AT6008854
Tof -the load, a short circuit of the cable during thecharging of the capacitor bank,,
J'and a short circuit of one capacitor at nominal charging voltage. The tests have
J ~
i shown that the increase in the current of individual capacitors occurring under the
,abnormal conditions does not exceed the safety factor incorporated in the design.
jOrig. art. has: 5 figures.. 5 formulas,, and 2 tables.
SUB CODE: 091 SUBM DATE: 20oct65

'2
ACC NR-. AP6001577 SOURCE CODE'
(A)
:,AUTHOR: V.; Linetskiv, V. Ya.; Fertik, S. M.
I Konotop, V
'ORG: Khar'kov Polytechnic Institute (Khar'kovakiy politekhnicheskiy institut
!TITLE: Iligh-voltage low-inductance ca2acitors with a built-in trigatron
SOURCE: Pribory i tekhnika eksperimenta, no. 6, 1965, IZI-123
TOPIC TAGS: capacitor, high voltage capacitor , electric indilctance/ KIM capacitor
ABSTRACT: As most of the undesirable inductance of a h-v impulse generator lies
in the conductors connecting the storage capacitor with its trigatron discharger, a
combined trigatron-capacitor design is proposed (see sirnilar ideas in Sc. Instr. ,
1961, 38, no. 4, 136, by A. H. Gabriel et at.). The inductance of a conventional
20-kv trigatron-capacitor circuit used to be 40 nH; the combined design of the same
elements showed an inductance of only 15 nH. Some now combined capacitors
developed current impulses over 600 ka. In some cases, a load (e.g. , a discharge
tube), instead of the trigatron, was built into the capacitor structure. Orig. art.
has: 5 figures, 2 formulas, and I table,
SUB CODE: 09 / SUBM DATE: 050ct64 / ORIG REF: 003 / OTH REF: 00 1
UDC: 537.54

ind
rf- i1~
1/2

ILA .....
=-ft-Olt."Putram- see*
PON"" 46M MWASAll
Carmers ()f Lle Iral.n coijec-I C, cc, 2,2
.!,T ar: ay, n or
?- In-st' Boalk 7, 194", P. 49-55.
U-385f-,, 16 June 53, (Letoris 'ZIlumml InYkh Statey, No. 5, 10

KONOV, 1*1.; KALWOT, L.K.
Now method for,the Alignment of the disk spindle axle on internal grinding
mchines. PbdAipuik no.7:31-32 Jl 153. . (KUi~ 6:8)
(Grinding and polishing)

AUTHORS:, Konov, K. I. and Anders, n. R. 94-13-7-8/25
TITM ijil4i6vii"'lectric Furnace for High Temperature
Reduction of Tungsten by Hydrogen (Usovershenstvovannaya
elektropech' dl-ya sokotemperaturnogo vosstanovleniya
vollframa vodorodoM7
PERIODICAL: Fromyshlennaya Energetika, 1958, Vol 13, Nr 7,
pp 16-17 (USSR)
ABSTRACT: This suggestion was awarded a fifth premium in an All-
Union Power economy competition. Hitherto tungsten was
reduced by hydrogen in imported continuous electric
muffle furnaces of 33 kW rating operating at 220 V and
illustrated in Fig.l. The imput was regulated by hand
by means of rheostats, The authors developed and
introduced a new continuous high-output furnace
illustrated in Fig.2. The furnace was made longer, two
tungsten heating muffles were connected in series and
shields were constructed to reduce heat losses. The
furnace is supplied by three auto-transformers of 380/50 V
each.of E5 kVA output. Technical data relating to the
Card 1/2

I%.-
94-13-7-8/25
An Improved Electric Furnace for High Temperature Reduction of
Tungsten by Hydrogen
old and new furnaces are compared in a table.
There are 2 figures and 1 table.
Card 2/2 1. Electric fum3ac*s - Design 2. Tvmpten - Radaction
3. Hydrogen - ApplicatiorA

IDNOV, L.A.
---- Manow
The A801 automatic press with 200-ton capacity. Biul.takh.-ekyon.in-
form. no.9t!3-15 160. (HIBA 13:10)
(Pbwer presses)

KONOV, M. N.
Tractors
Year's operation of tractors IT-12 equipped with gas generators TSNIIME - 17., Les.
prom., 12, no* 1, 1952.
9. Monthly List of Russian Accessions, Library of Congress, karch, 1952 , Uncl.

11 'rechnic.-il rioclinentnry of the elacl-.--ic oro+-ictr, in-lustry. P-3-
-iL-,'I,TRO"*.I:-"`GII;I. Sofiya. Voi. 4), no. 5. 1--y 1955-
- :1 11 1, -.
30* alonthly List of the Finst Eiiro-penn, AccL-ss',ons. li~- Vol. 4,
no- 10, Oct- 1.955- Unal.

KONOV, N., inzh.
Currant ways of providing current to electrotelphers and electric
cranes. Mashinostroene 13 no.9:44-46 S 164.

VODENICHAROV, I.; ILKOV, D.; PATARINSKI, N.; KONOV, T.
Chemical and agrochemical studies of lignite waste. Izv
Inst, "NikolaL Pushkarov" 7:151-169 163.
-t~I
1*1Z
i

KONOV, T.
Differentiated quotas for the obtainment of manure in
cooperative farW, Isy Inst wNikola Pushkarov" no-5:203-223
162.e

KONGV T. inzh.-, SAKWOV, S. inzah.; SUBBOTIN, I. inzh.; CHERMNM, Y4iv, inzh.;
:::~~ - .7 2
KARYAKO. B., inzh.; ROSHCUPKIN, V., inzh,,; BORISOVA, T., itizh,.;
GARIWH; V.,, inzh.;, GOIDMIA, V., inzh.
New developments in buildiW. prra--AI:,-e. Na stroi. Ros. 4 no.1'-?,llJ4,,l8,,
,-~6.00 J& 163. (MIRA 16:3)*
(Building-Technological innovations)

"0 lovoy. V.A.
.1
% Replacing the casing of a millinc machine. Woment 17 no.6:
22 I-D 156. (am 9:8)
1. fiengeloyevehy taxontvyy sawad.
(Crashing vachinery-Naintenance and repair)

KIM
The Effect of Nuclear itadlatlon (Cont. SOV/15276
PURPOSE: This book Is Intended for personnel concerned with
nuclear materials.
COVRUGE., This Is a collection of papers presented at the
Moscow Conference on the Effect or Nuclear Radiation on
Materials, held December 6-10, 1960. The material reflects
certain trends In the work being conducted in the Soviet
'scientific research orginization. Some of the papers are
devoted to the experimental study of the effect of neutron
irradiation on reactor materials (steel, ferrous alloys,
molybdenum, avia4 graphite, and nichromes). Others deal
with the theory of neutron Irradiation effects (physloo-
chemical transformations, -relaxation of internal stresdies,
internal friction) and changes in the structure and proper-;
ties of varlous crystals. Special attention Is given to
the effect of Intense Y-radlatlon on the electrical,
magnetic, and optical properties of metals, dielectrics,
and semiconductor$.
card 2/14

The Effect of Nuclear Radiation (Cont.) SOV/6176
Astrak*ntsev, So No,, '4Ln&XU_- To Konno~vo~ Effect of Neutron
)g4neoxis--3 W 0
Irradiation on Inhmi -a -d-SAutions 121
Specimens of X20H80 [WOOO~J'ailoy were irradiated at a
temperaturd not exceeding 100 [01 by a therml neutron flux
of 1-1017 to ii4-1020n/oma,
Sayenko, o. P. Effect or Neutron Irradiation on Ordering Fe.Al
Alloy 127
.Specimens were irradiated by fast neutrons and measure-
ments were nwde of electric resistance, lattice parameters,
and the intensity of.superlattioe lines.
Ivanov, A. No* and No.F. Pravdyuk. Effector Neutron Irradia-
tion on Electrical-Resistance in Certain Metals 136
Pravdyuk, No - F., and P. A. Plastonov. Study of Long-Time
Strength of Copper After Irradiation 153
The investiption was conducted before aand after irradia-
tion with a neutron flux of vslO*o n/cm
Card 7/14

S/137160'/000/009/019/029
Aoo6/Aool
The Effect of Rare-Earth -Elements on the 9-~ructure of Frac-t~ure and the Strun,'t~jr._
and Properties of Steel e-
at a teeming temperature of 1,5500C the addition c~f 0.3% rrisch me-'al to ~he
prevents the formation of intergranular fract-1-ires of !ast. steel. There are 7
references.
T.F.
Translator's note: This is the full translation o4_~ Russ,_an abst-r&-It.
Card 2/2

XONOV Yu K., ZIIIOVMA) T N.) KOLODNAYAj 13. A.. (Enginooro), =6 ~TIDTAIOID) L. A.
~J~
___(?~a`~_d. aberi-.Sci.) (Mos cow
q'Investigation of processes of joining titanium-aluminum and aluminum--steel"
vas devoted to a study of the behavior during dynamic loading of constructions, achieved
by welding and by rolling and welding by explosion. A technology was developed vhich
involved preliminary hard-facing on titanium of technically pure aluminum AVOO or AVOGO
either with calorizing or without it. Thickness of the layer of hard-facing is 5-8 mm.
Welding is carried out by are in argon by melted or unmelted electrode. Ultimate
strength of joining OT4 with Amg6-11 is 24 kG/MM2, angle of bend 17./300.
Report presented at the 1st All-Union Conference on welding of heterogeneous
metals, at the Inst of Electric Welding im. Ye. 0. Paton, 14-15 June 1963.
(Reported in Avtomaticheskaya svarka, Kiev, No. 9, Sept 1963, PP 95-96 author
V. R. Ryabov)
JPRS 24,651 19 z-fay 64

WETI Ljk_0_JD_____
ACC NR,AP6014717 SOURCE CODEr
AUTHORs Nadzhakov. G.; 42pqv~A. Pskavap S.
ORGz SQr"_1Ln ~rsi~t Physics Department (Fisicheskiy rakulltet, Sofiykkiy
Univeraitst)
TITLEt Photoelectre t effect in small cadmium sulfide single crystals
SOURCE.- Bulgarska akadsaiya na naukite. Doklddy, v. 19, no. 10 1966.. 13-16
TOPIC TAGSs photoelectretp semiconductor research, semiconductor single crystalp
cadmium sulfide,, dielectric property, single crystal
ABSTRAM Small cadmium sulfide single crystals dispersed in araldits, resin were
studied to determine whether a photoolectrot effect can be produced in 6=11 single
crystals as in large ones. The measurement results show that 1) one part CdS to
three parts resin in the most effective ratio,, g) the permanent polarization varies
from sample to sample -Aepending op..the ratio of CdS to re4in,,- .3) photo-
polarization saturation depandi:tm polarization time regardless of illumination
intensity and in characteristic of the given sampleg 4) the reciprocity law holds
for an extensive region which Increases with the percent content of resin to CdSp NA

L 34668-66
ACC NR, AP6014717
5) all the samples have a beterocharp and the photopolarisation values do not
depend on the voltage polarity. The resQts lead to the conqAsidn that the photo-
elecret effect can be produced in small single crystals as in large single crystals
b-~V'that the materials employed mat have a high dark "cific resistance. Orig.
art. hass 4 figures and I table.
SUB CODRs 20/ SUBM DAM 2lS*p65/ OHIG REFs 001/ SOV REPt 007,'

ACC NRs A
I
(t)/ETI IJP,(C) JD
SOURCE CODS.
AUTHOR: Nadzhakov, G.; Antonov, A,; Pakova, S.; Konova, As
ORG; nono
Oi
Ylil 0 711 9
A
TMM: Conservation of the homocharge during the dark polarization of sulfur
monocrystals
SOURCE: Bulgarska almderdya. na naukita. Doklady, v. 18, no. 32, 1965. 1087-1090
TOPIC TAGS: dielectric polarization, photoolectrat, aloctric field. single crystal
ABSIM.M. The creation of photoelectrat states within dielectrics is accompanied by
dark polarizAion, i.o., polarization in darkness by means of applied eloctrie fields
During such polarization the surface may require hetcro- as wall as homochargos. G.
Vladzhakov at al. (Dokl. BAN, 13, 1962, no. 8, 803) assumed earlier Uie., the applied
high voltage causes the ions with-in the dielectric to be absorbed. The present inves
tigation studied, consequently. in more detail. the creation and decay (in tim) of
the homachargo during dark polarization of sulfur monocrystale. Diagram present the
time dependence of the polarization, depolarization, and homocharge decay with the
applied voltago'(1-5 kV) as parameter* The paper ends with a brief discussion of the
results*' Orig. art. has: 4 figures. CJPRS: 36,46ff
SUB CODE: 09, 20 / SUBM DATE: 23,Sep65 / ORIG RSF: 003 / SOV REP: 003
OTH RD-F: 002

NADZI(AKOV, G.1 ANTONOVI A.; ZADAROZIINYY, G. ("Ladaroz-hiiii., G.1; KONOVA, A.f
PAKEVA, .9.; YUSKESELlYFVA, L. (Makesolieva, L,jI8
A new type of two-layer electret. Doklady BAN 17 no-4:365-368 164.

KQLOVk,,I.-.-.,GESHbTk, R.
Blosyrithesis of vitam-In B 12 by antinomycetes cultured on solid
media. Izv. mik-,oblol. inst. (Soffla) 16-.207-212 164

VA,
unman of owl"
Ol olCMudk. I.,,T=and
(PeDpkls Usk, MaKew). 3fibrobia-
14iju It. 24-31 al Chlmll4 rulldris (1)
VOW fAl' btttCF 00 MUh tbAU 00 Pf"Mi, WJPf "WhMS.
Orn 1-2' lialfing. Untiff iutaerobk,
,.wiiT;, ii. tw I., X proliffface;
wbeo smial to to 10-211. It jwt4ifvrAtt-. In quirillion I
P"m Imm befertrupbUni at kvw rn thrimaill * heterotil-
pitic-autatropisir sup at inedium ril lu vi chkdy iwotu-
trophic (photasymbes6) stage at high to. J. F. S.

k-ONOVA, I. V.
"The Metabolism of a Representative Group of Actinomyces Griseus in
Relation to A4.ibiotic Activity." Cand Biol Sci, Inst of Microbiology,
Acad Sci USSRV 29 Dee 54- (VM, 21 Dee 54)
Survey of Scientific and Technical Dissertations Defended at USSR
Higher Educational Institutions (12)
SO: Sum. No. 556 24 Jun 55

IYIRUSALINSKIT, N.D.; KONOVA, I.T.; XWNOVA, N.M.
Determining vitamins and antibiotics by diffusion into agar. Report
No. 1: Simplified computations for the dish method. Mikrobiologiia
28 no.3.-433-443 Yq-Je '59. (MIRA 130)
1. Institut mikrobiologit AN SSSR.
(VITAMINS, determ.
simplified computations for cup method (Ran))
(ANTIBIOTICS, determ,
same)

----~9NF4 NRONOTA, N.M.; IYERUSALIMSKIY, N.D.; BORISOVA, A.I.
Determining vitamins and antibiotics by diffusion into agar. Report
16.2: Qaantitative determination Of vitamin B12 and its derivatives
by paper chromatography. Kikrobiologita, 28 no.4:490-494 Jl-Ag '59.
(MIRA 12:12)
1. Institut mikroblologil AN SSSR.
(TITAKIN B12 chga-)
(IMMICHIA COLI)

17 (4)
AUTHOR: Konoval It V. SOV120-126-3-59169
TITLE: Physico-chemical Indices of the Medium (pH, Eh' rad in the
Development of Actinomyces Griseus and Its Production of
Antibiotic Substance (Fiziko-khimicheakiye pokazateli eredy
(PH# Eh, rH2) pri razvitii Actinomyces griseus i obrazovanii
im antibiotichemkogo veshchestva)
PERIODICAL: Doklady kkademii-nauk SSSR, 1959, Vol 126, Ir 3, pp 671 - 674
(USSR)
ABSTRACT: It is known that the activity of the microorganism species pro-
ceeds within a certain rigid physico-chemical framework. The 3
indices mentioned in the title are the most important factors
which determine the degree of usefulness of one or the other
medium for the development of various microorganisms; active
acidity and redox conditions of the me 'dium as they are indi-
cated by symbols in the title. I) Although most Actinomycetes
(Ref I) grow between PH 5 - 9, there are, however, species the
useful zone of which lies between PH 4.2 and 11. The process
of the change of the pH-values is finally caused by specific
Card 1/3 properties of the metabolism of the bred organism and by the

Physico-chemical Indices of the Medium (pH, Eh, rH 2) S07/20-126-3-59/69
in the Development of Actinomyces Griseus and Ito
Production of Antibiotic Substance
composition of its culture medium. The medium is among other
things sometimes acidified ' the alkaline pH-initial value is
not able to prevent this (Refs 5,9). The author investigated
the change of the active acidity during the development of
Actinomyces gris*us and during the production of the anti-
biotic in culture media with 10 different pH-initial values
(4.23 - 8.69). The obtained results are given in the figures
1 and 2. They show that PH 4.23 (initial value) does no more
belong to the medium acidity favorable for the Actinomycetes.
It is obvious that this organism actively regulates the PH-
value of the medium. It secures thus conditions for the pro-
cesses of metabolism among these also for the production of
the antibiotic. II) A certain dependence exists between the
amount of the redox potential of the medium and the vital ac-
tivity of an organism bred with respect to this. Data given on
this in the publications are rare (Refs 3,6)- From the author's
experiments it is concluded that Actinomyces griseus grows in
Card 2/3 a medium with rH 2 19 - 28 under the conditions of the depth

Physico-chemical indices of the Medium (pH, Eh, rK 2) SOV/20-126-3-59/69
in the Development of Actinomyces Griseus and Its
Production of Antibiotic Substance
culture (glubinnoye vyrashchivaniye). The highest antibiotic
activity was detected in the case of a reduced redox potential.
There are 3 figures, 1 table, and 9 references, 4 of which are
Soviet.
ASSOCIATION: Institut mikrobiologii Akademii nauk SSSR (Institute of Xicro-
biology of the Academy of Sciences, USSR)
PRESENTED: February 23, 1959, by V. N. Shapoohnikov, Academician
SUBMITTED: September 6, 1958
Card 3/3

SKRYABIN. G.K.; KOMDU. I.T.; ZDMILOVA, Yu.Y.
International symposium on antibiotics. Nikroblologlia 29 no.1t
154-157 Ja-F 160. (NIRA 13:5)
(AWJ3IOTICS--C(ffQMMFS~NS)

IYE-RUSALIKOKIY, N.D.; KONOVA, I.V.; NZRONOVAt N.M.; ANCHUROVA) A.I.
Determination of vitamin B I by the bioautographic method. Vit.
res. i ikh isp. no.5s119-13~ 161. (MI.RA 15-.1)
1. Institut mikrobiologii AN SSSR, 1408kva.
(CYANOCOBALAMI1,12) (BIOLOGICAL ASSAY)

KONOVA, ILV.; BORISOVA, A.I.
Production of vitamin B by Act. olivacaus on a synthetic medium.
Mikrobiologiia, 30 no.ldl-34 Ja-F '61. (I'IIRA 14: 5)
(ACTIUCHYCES) (CYANCiCOBAIA14INF.)

KONOVA, I.V.; FATEYEVA, M.V..; I)MUSALIMSKIY, N.D.
.1
I First International Symposium in Italy. Mikrobiologiia, 30 no.2:
371-374 Mr-Ap 161,- (MIRA 14:6)
(FEMENTATION-CONGRESSES)

lt~ie cir aeetono-butyl
1-*1-0111 Act. 011vaceus.
B 11crobiolov 1 '1 ~L 31 no..".7h, 1)
(IldliA 18-31)

KOM "I iI!,~I, i . i,..
I - -- -
Doftlmse of theref3. IMikroblalogiia 311. na.4:763-7U. J 1-Ag f 62 .
(1,11RA 18:3)

ZMWA, I.V.
~Rnll
Zbfmwo of dimeartatioro. Mikrobiologiia 31 no.6sll39-1141
N-D"620 '- ~ *. (KICROBIOLOGY) (MIU 2683)

KONOVAP I.V.
Defense of dissertations. Mik-robiologiia 32 ri,.2:381
Mr-Ap 163. (MIRA 17t9)

SH"OSHNIKOV, V.NLKoNovA I v
40RISOVA, A. I.
.4._.
Vitamin B synthesis by Actinomyces olivaceus in a synthetic
medium i;~?he presence of 5.6-dimethyl benzWdazole. MikrobiologiiiL
32 no.4:598-602 Jl-Ag 163. (MIRA 17:6)
1. Institut mikrobiologii AN SSSR.

LISENKOVA,l
,O.L.'- KONOVA, LV.
Methods of vitamin B
1 assay by a diffusion method using
EsbhbriAia coli 113i3. Mikrob16logiia 32 no.5,0885-890 S-0163
(Mln 17:2-)
1. Inatitut mikrobiologii AN SM.

KONOVA, I.V.,- LISENKOVA, L.L.
Biosynthesis of vitamins of the B12 group by Actinomyces
olivaceus on a synthetic medium. Izv. AN SSSR. Ser. biol.
no.5060461 S-0 165. (MM 18:9)
1. Institut mikrobiologii AN SSSR, Moskva.

KONOVAJ, I.V.; NACHEV, L.; GESHEVA, R.
Production of vitamin B32 by Actinomyces,
of various composition. Mikrobiologiia 34
165.
grown on solid media
no.3:528-532 My-J6
(MIRA 18:11)
1. Institut mikrobiolog'Li AN SSSR.

KONOVAt K. P.
flConcerning Active Immunization Against Measles by a Dry-Virus-Vaceine
Produced from a Chick Embryo" Proceedings of Inst. Epidem and Microbiol
im. Gamaleya 1954-56.
Other Personnel Identified as Participants in Sessions of the Institute's
Scientific Council Held During 1955. Inst. Epidem and Microbiol, im.
Gemaleya AMS USSR
SO: Sum 1186, 11 Jon 57.

KONOVA, K.P.
- W.- -, -
Comparative study of the biological activity of staphylocoaci
strains of various origins. Zhur. mikrobiol., epid. i immun.
41 no.9tll7-123 3 164. (MIRA 1814)
1. Institut epidemiologii i mikrobiologii imeni Gamalei AMN SSSR.

KONOVA, K.P.
%terminati6n -)f staphylocaccal heriolysin~ -by-the- tqchnIcqii6 *of
hemcly~ls ftp-bttalizatibn ~dth'antistliphylocoo6al s6ra on agar, ;
plates. Zhur.mikrobiol., Ppid. i immun. 42 no.2.-110-115 F 165* '
.1 - - - . .. -. (MIRA 18'6)
1. Insti-but epidrriiologii I udkroblologli imeni Gnmalei VN SSSR.

KONOVA, L.
Case of spontaneous rupture of the uterus in pregnancy. Khlrurglia
Snfla 8 no.3:284-285 1955.
(P-RKGNANCY. complications,
uterus rupture, spontaneous)
(UTMUS, rupture,
in pregn. spontaneous)

GIORGIEVA, M.
NIKOLOV, ff.; RAICH17, R-,~.~
No cases of Drenner%imor. Khtrurglia, Sofia 9 no-3:
272-274 1956.
(BRINM TUMOR, case reports
(Bul))
(OVARIES, neoplasms,
Brenner tumor, case reports (BUM

~ONO~jk,-L-,- MINCIIEVA, M.
Trichlorethylene anesthosia In labor. Akush. ginek. (Sofiia)
3 no.6t59-64 164.

CA T C-i CuLtivated Plants. FC&Ior
JOUTIR. : RZ~j',1j,rj1.P tl'rJ- 3, 1959, !1r,- 109,35
.AUTHOR :
INST. Konova L.
Saientific R,~saaroh A&-rioultural Inst.
'FITLE, A SWY of ,',he Grass Mi;xtures of Perennial Grassos with
aShort, Period.of Utilization.
'TO. PUB. Nauihui tr. M-vo zemed. i gorite. Ser. rastaniyev"datV0,
1958, 3t No. 1, 23-36
LABSTFACT A study of the productivity of various grass mixtures
when gown on ItypicAl chernosam waa oonduoted at the
Scientific Resear,3h Agricultu-ml Inetitute in Knaah
(Buigarla) during 1952-1956. So-,m an tie plots were:
tall oat-gras5 and Italian rye-grass (Lolium multiflorUM4
awnleus broma grass and coc]xafoot (Daetylis glomerata),
red olovor, Walfa " osparoat, In the aimple (binary)
mixtures, the ratio of the logtmes and cereals was 5000
and In the oompound mixturea - 60140, Botaaloal aaa]4nia
of the hay and the identification of the root residues
ICARD - 1/2
-73-
Ugher rate of a -2--r leguminous S
mixtures P- OVI-Av 0
than for cereals. - V. 15. Shmsilko
CARD: 2/2

XONOVA. L,,I-IVANOVAs Khr.; ZOGRMKI) F.
Dellvery of premature infants with the aid of a speculum.
Suvr. mad. 13 no.3324,-30 162,
1. Iz Parri rodilen dom "Tina Kirkova" - Sofiia (Glaven lekar
St. Illev) Nauchno-i3sledovatelski institut po akneheretvo
i ginekologlia (Direktor dots. Br. Papazov),
(INFANT, PREMATURE) (DELIVERY)

GERASIMENRO, G.; KONOVA, T.
Role of credit in the organization of working capital. Den. i kred.
20 no.1:14-20 Ja 162. (MIRA 15:1)
(Rostov Province--Machinery industry--Finance)
(Gorkiy Province--l-lachinery industry--Finance)

49MIYU-1 =-KOV G
Kos,
Complicated retrobulbar neuritis. Zdrav. Belor. 6 no. 10:62 0 160.,
(MIRA 13: 10)
1. Iz otolaringologichqokogo ~. glaznogo otdaleniy oblastnoy bolluitsyp
go Viloyka, (OPTIC NFAVE-DISMES)

Diagnostic ;Wlili' of determining the C-reactive protein of the
b1nod serum in chronic sinusitia. Zhur. ush., nos. i gor. bol.
2L no.103-75 Je..F 164. (MIRA 180)
1. It kliniki boleiney ukhq, gorla i nos& (dir.- zagluzhennyy
deyatell nauki pref. A.G. Likhaehev) T Moskovskogo ordena
Lenin& meditainakogo inst-Ituba imerA Saahervtn.

41 7.
~,rUe, ba 72AU
the Carre'rtondiug chi
Si3% Aijx. C,,ff.. bt I i D.9103. which
was ddrd V. U Undler Elio there b~t~
% littlc C-'1r1:C&TeCf4C1. (1), aud whctt the hy,ir'Icnated to !, a.
Ift"4'in tLlkl CoMmeaced. & Spin, of 221 105-5--d" rZU 1-446L1 d.0.7QQ,5' Tiv-tttrl"'t Ja6g.2.2.3.,
6.5 9. 1 and 774 c. . vr.tfx 13 r. M9 11~t 38~2 C., 1:
AcOMe In 1.5 1. EttO Was added over 10 hrs.j dLtta, gnve which
63 % -tL-Y ale -, CdfuO. bu 9G-1 *. nV 1.45M. d, 0.8W8 6-av, 2-8 g- j!ein, N 45-7'. WO LIM- (i= 0-77"3*
wfikh hydrogenated over R-aney IQ at 130* and 160 tm' bydOV~zared to b- M2-3',-
to the alc - CaI4:0, bn W-7% al? 1AM, dw 0,8252, wj-jcj' 2,2
~? d,, 0.7621.
trttatL-l With HCI at 70' gave the chloride CUff1t(2. big are, g. CH.:CHCH-.Cl aud 21 iC- NIK IF4v'L "I".
72,3*, Vj? 1.4355, On 0.8677 w[Ekh %ras idenitEtd as (27.2 g.) b, 193-8*, Mp' 1.4521. d-n 0 'SCG4~
C ~d to ,,4
4. -hais (35A c.) =d'-77.18 g- I tL
L-eated widi 9 g. Mj yielded as a main product (42%) of IV 1.4410, d.-4 0-7~t- El "'alto Prepdfas follows'-
n:V 1.43-10t dz~01,8463, P-PIL bv
an okfin, b. 94--S*. W 1.4490. On 0.8004, whkh by-dru.- (br. F'-'
gepted to be 10"I -Rat;!'!1 of 2,214rialethym
hyd'oge
Wi~-J.43511,(!.0.7812. Treatment of land pinacaUue with kith k1cl at W YwU'-'C t"'! CP-1-rile. rz'.* 1-4445~ dV
Mg (73 g.) run as above, g2ve 142 g. 2 2 this cu-ndti-zd with I EU the Pmcm' of
b, 46*, 14'17 1AM2, (In O.Kski loxidatii-'a of this
72 -3
gave Nfe'co and-a hydroxy acid, tn. 141' (cf. C.A. 49 10 b,:, 121-4a', r
-1 Loa
which treAttd with HC1 at 04 gave but 0 570 yici~ 1 g. iso-l'rCO-Mt aftf -3 9,
I .-V;37,
of the correspanding chkr;?c and 9070 dichloride, n',T 1,4710. b. 1~j 5
d.-j 1.023; hydrogenation of the ak. gave the ra:d, arwlvg, dr-j-ed V.1th
bu BIZAS', rj? 1A=, On 0492. ideati6gd as .*,2.3,5- 1,
is-,

VAYNSHTEYN, B.P.; KRUGLIKOV, V.Ya.; RAPOPORT, I.B.; VASILIYEVA, Z.A.;
KAGAN, L.Kh.; PLOKENSKAYA, Ye.A.; VOLYNSKIY, A.V.; HJZOVSKIY,
V.V.; KLEVTSOVA, V.P.; Prinimali uchastiye: MICHAN, A.I.;
KQNQYAL!qjJLKML._~~NSHTEYN, V.G.; KVASHA, V.B.; CHELYANOVA,
D.P.; ZAYTSEVA, A.F.; ANDREYEVA, T.A.
New way to synthesize oxygen compounds from carbon monoxide
and hydrogen over iron-copper catalysts. Trudy VNII NP no.
9:177-196 163. (MMA 17:6)

J~QkJO P.N. ; MU.'31YONO, V.P.; SKARCHENKO, V.K.;
-VAL!QtIlNQV, P.D.; GALIGH, A .
PETROV, A.A.
Effect of the porous 3tructuro f an alumina-chradum oxide
catalyst on the conversion of n-hexane. Kin. i kat. 5 no.2:
115,0-354 Mr-Ap 164. (MIRA 17:8)
1. institut khimii vpokcmalekulyarny'kh soyedineniy AN UkrSSR.

'TROV, A.A.; SKARCHFITY0, V-'
KONOVAI,'qjUAQV..,_O.D.,; GALICH, P-11-; PL - 11 o-
Dehydrcgenation of n-hexane on
coal catalysts. Kin. i kat. 5
1. Institut khimii polimerov
aetimterl carbon and Cr203-
no.3:561-563 Itr-Je 164.
(!.IIRA 171:11)
monomerov AN 11krSSR.

ILtltl~ i1j.A., -`)LdGLYEVA, Ye.S.- KOINOVAL'CHLIK, X.Ya., tekhnik
System for a defectless production of goods. Tekst. prom. 25
r,o.5-,4-6 My t65. (MIRA IS:5)
1. Direktor Bryanskoga kamirollnoga kombinata (for Illin).
Z. Nachallnik otdel'a truda i zara~x)tnoy platy Bryanskogo
karwollnogo kombinata, (for Sergeyeva).

-KONOVALICHUK, M.Ya., takhnik
--- - -
Teohnological study room as progress promoter. Tekst. prom.
25 no.10t8l 0 065. (MIRA 1&10)
1. Byuro tekhnichaskoy informatell Bryanskogo kamvollnog3
%I
kombinata.

BEREBRYAKOV, R.V.; DALIN,, M.A.; KONOVALICHUKOV. A.G.
Some regularities in the reaction of cyanoethylation of hydrocyanic
acid, Dokls AN Azerb, SSR 19 no.11:31-34 1630 (MIRA 1733)
1. BNIIolefin.

/F-P F t' /SP R /EPJ/T/NA a Pa-h1/Pr-h/Pff-4
NF- AP5015484 UR/0286/65/,)00/008/0019/0019
547.239.2
AUTHOR: Serebryakov, B. R., Konovallchukov, A. G.
A methad for producing succinic acid din-itri-le. ~Class 12, No. 170050
SOURCE: Bril-leten' izobreteniy i tovarnykh znakov, no. 8, 1965, 19
TOPIC TAGS: succinic acid, amber, lignite, diacid, dinitrile
This Author's Certificate introduces a method for producing succinic
"itrile by cyanoethylation of hydrogen cvariit1e wi"-l all 20-'YOOC
Pr-2sence of an alkall' catalyst. The process is simv.!'i--'ed L-; using ion-e>t-
""anze -es'ns which are insoluble in the reagent solution as the catalyst, e.g.
EDE-ICP anion exchanger in the sodium or potassium form.
,-S-SOCTATTORt Vsesoyuznyy nauchno-issled
ovatellskiy tekhnologicheskiy institut po,
a-L
polucheni.yu i perepabotke nizkowlekulyarny~rt olefinov (All-Union Techt)olo ical
Scientific Research Institute for Produciniz and Processiniz Low-Molecular Ole-fi~na
SM=D: WV164 ENCL; 00 SUB COM W, 00
so MY SCFV: 000 OTHER: 000

MURASHMp 0.9 inzh.z KONOVALKNAK
Eng3.ish Immolge for ship engineers. Nor. flot 23 no.9:44
S 163, (MIRA 16til)

KCSOVALM-0- .- stALlevar
~', PAR ~--
About his coamdese Metallurg 9 no*7:22-23 Jj 164,
(MULA 172 8)
1 v

KDNOVALENKO, A.F.
Some features of the installation of precast concrete sections
of the No.3 shore pumping station. Energ. stroi. no.37:
58-60 163. (MM 17-6)
1. Starshiy prizvoditelt rabot montazhnogo uchastka tresta
"Yuzhenergomontazh.11

I -i, -
4
RYVKIN, Be:
Photodiode from Junction translator. Radio no.2:4i Y 158.
(Photoelectric cells) (KIU 110
obtained in this way should not be used under conditions
of increased humidity.
1. Diodes-Design 2. TransistQrs--Appl-icatlorm
Card 1/1

vawdvts /Jew ,~dj
USSR/Physics Conductivity of CdS
Card 1/1 Pub. 153 - 1/24
FD-9997
Authors Ryvkin, S. M.; Konovalenko, B. M.; and Smetannikova, Yu. S.
Title Dependence of conductivity induced in layers and single-crystals of
cadmium sulfide upon energy of exciting electrons
Feriodical Zhur. tekh fiz., 24, No. 6, 961-977, Jun 1954
Abstract Present results of an investigation into the non-equilibrial (induced)
conductivity in CdS layers that arises under the action of bombarding
electrons with energies 2 to 30 kev. Show that, with decreasing energy
of exciting electrons from 10 kev and lower, a sharp drop occurs in the
"transverse" induced conductivity relative to unit energy incident on
the specimen. This drop is explained by the decrease in depth of pene-
tration of the electrons into the substance. An analogy exists between
this drop in induced conductivity and the drop in photo-conductivity in
the depth of the particular zone of light absorption. Acknowledge rx.1-
vice of D. N. Wasledov. Twelve references: 7 USSR (L. G. Parill'skiy,
B. M. Angelov, S. V. Starodubtsev, V. P. Zhuze, V. A. Arkhangel'skaya,
A. M. Bonch-Bruyevich, S. M. Ryvkim).
Institution
Submitted February 8, 1954

USSR/Physics Photodiodes FD-2393
Card 1/1 Pub. 153-2/21
Author Alferov, Zh. I.; Konovalenko, B. M.; Ryvk1n, S. M.; Tachkevich, V. M.;
and Uvarov, A. L
Title Flat germanium photodiodes
Periodical Zhur. tekh. fiz. 25, 11-17, Jan 1955
Abstract The authors describe the principal properties of germnium photodiodeG
of unique design and free from the usual deficiencies. In this design
the illuminated area Is not limited by the length of the diffusion dis-
placement and can reach very large sizes corresponding to the total area
of the n-p transition. They conclude: the germanium photodiode is a
photocell valve to which considerable voltages can be applied in the
closed direction; the sensitivity of the photodiode is about 300 times
that of photocells with external photoeffect; the proper time of german-'-
um photodiodes studied is about 1/103 second, and can be decreased by
decrease of the thickness of the n-germanium layer; the characteristics
are very stable and free of "fatigue". Deficiencies are considerable
temperature dependence of the dark current. The authors thank D. N.
Wasledov, N. V. Shchetinina, and L. P. Bogomazov. Three references,
including one USSR (S. M. Ryvkin, same issue, p. q1).
Institution:
Submitted October 13, 1954

USSR/Physics Photodiodes FD-2399
Card 1/1 Pub. 153-3/21
Author Konovaleako a N Byvkln, S. N.; and Tucbkevick, V. M.
Title Sensitivity of germanium photodiodes to x-rays
Periodical : Zhur. tekh. fiz. 25, 18-20, Jan 1955
Abstract : Numerous attempts have been made to utilize photocell valvis as dosi-
meters 6f x-rays (e.g. V. X. Tuchkovich, Phys. Z11 d. Saw. 5o 1934 and 7,
1935; 1. M. Polyak and X. N. Dlyachenko, ZhTF 22, 1952)0 but without
practical results in consequence principally of the insufficient sonsi-
tivity. Recently a new type has been investigated, namely the germaid-
um photodiode (same Issue, p. 11; see preceding abstract). In the pres-
ent article the authors expound certain results of their efforts on this
problem; namely, they compare the sensitivity of germanium pbotodiodes
and certain photocell valves under various conditions. They point to
the possibility of the practical utilization of n-p transitions in ger-
*Anium as dosimeters of intexse-x4ays (6.g.' diroct-radittion). They
thauk Do'-ft I-Nasleddi aiA N.;1. Dodon.'. Six 'references: e.g. .1.
hive..
JOBAp 43,:.1953; T
Institution:
Submitted : October 13., 1954

Al
6 86. C1[AjjAaTXX=j0 OF SONZ
COMPOUNDSWITH THe STRUCTURF OF 7JNC BLENDS,
N A aj~=Wa- Vj_Qrf,,Q0g%vA Hjd,Una~x~~ and
711. tekh.' Fit., Val. 25, No. 10, 1675-82 (1055). In Russian.
All the cornpoullds Investigated, viz. G3403. Gajej,
G4,Tej.9ZnT*, JI-GagS1, Gae,
GaTe, are semiconductors and are photasensitivo. 0.1
transition from one substance to another of (he s-ane strue.
tural type the long-wave limit of the photoconductivity shifts
In a regular way and, therefore, also (tie energy Interval
correspondiv; to the wIdth of the pratiAted tuna. The ever
Were prevalent ionic character of the boild explains tha phm~o-
mena. EILC
SOMME-mom

KWWAL
-7
AUT11ORS: Ryvkin, 3. M., Bogomazov, A. P., 57-271 -7-YON
Konovalen 0 M., lilatvcyev, 0. A.
TITLE: ASemiconduotor Transmitter for Camma-Ray Indication
(Poluprovodnikovyy datchik dlyu indikatsii U;-Lrima-izluoheaiya)-
PERIODICAL: Zhurnal Tekhnichaskoy Fiziki, 1957, Vol. 27, Nr 7,
pp. 1601-1602 (USSR)
ABSTRACT: As therp exists a great want of cheap and simple devices,
particularly of f;amma-ra., indicators, and a3 promising
results were obtained in this respect, with semiconductor-
materials, such as CdS and CdSe, whose conductivity
substantially chanEes upon irradiation, the investigations
were here performed in this direction. In Zhurnal
Tokhnicheskoy Fiziki, 1954, Vol. 24, P- 961 tho authors
showed that semicrystalline layers mu~; form upon sublimation
of CdS powder. The high temperature of the base, however,
leads to the diffusion of the base-substance into the
CdS-layer by which fact its properties with reL~;ard to
sensitivity in the caeo of irradiation are greatly
deteriorated. This difficulty -gas now overcome at the
Card 1/2 expense of a great increase in the speed of sublimation.

24(4) rflAaK 1 1-1111" j I'll
AkWasslyn nau~ Ukritnalcoy LnattClAt CLr1kI
ftwelektricheaxlye I ynvi-intyi v poluprovadnikakh;
144ody pervag:2 v8c0oyuznoo:,7 tzv-3jhcn3nLj3 Vo Coto~loktrlahOSklla
Z apt4dheSkINI 7.11vlenly.,um , paluprnvndnjk,1Ph, g. Kiyev 20-26 0
asarabrya 2951 g (Photoelectric anti Optical rhenam,-n& in seal.
eaniamators; ?mnnactionz a: in~ virat conrerenOe On PnOto6l*Ctrl* C--
and Optl.*SI Phainomcna In SewlGenduatorn...) Klyov, 1959. 403 P.
4.000 copies print-m.
I>
Additional 3ponsorlog Agencyt skidumiya nauk =8. Precidlum.
KamIsslys, po poluprovodnlkax.
of Publi,s&ing Houses 1. V. Kislna; Tech. Ed.t A. A. Nstvaychilki
Be". FA.ss V. Ye. Lftahkar~--, Academlcl~n, Ukrainian SSR. Academy --j
of Sciences. z
rn"Ris MIS book In int".d~.4 ror scientists In the CLeld or Semi-
solid at.%ta spectroscopy, and semiconductor
conductor physics.
devices. T!3e calleotion 71-11 -belloifZ' Ui*'WdV-iir.-1
asmiveratties and Inatitut-as Of hIphnr'tacAnIeal training
spaciallaing In the VhYMIC3 and technical application or semi-
eonductors.
CCMXR&Ggt The collection contains raports and Information bulletins
(the latter are Indicated by eatmrUskls) read at the Pirst All-
01MIM Conference on Optical and Photiolectric Phenomena In Seffil-
conductors. A wide Scope of problems In semiconductor physics
god technology a" considered. photocomduarivIty, photoelectro-
motive forces, optical proper-zles, photoelectric calls and
phatoresistors. the action* of hard and carpuscular radiation$.
the properties or thin films and complex Semiconductor systems,
etc. The materials were pri*ared for publication by E. 1.
Rem"ay, 0, V1, 3nitko, 11, 11* -.alPyg,, A* P. LubehankNond M. K.
Sheynkman. References and discussion follow each article.

fto"Issatme and apticaa Phanamens, (CCU%.)
30V/3140
Tip
the Forming and S. P1 jtvvkj stechwina,
a"
st&I-Countore During the
"
Famatlon of a
Through CosaftatIn
4 Chnodle 379
-Fzvkln. S. X Z, p L X--J(4MM--ov4lenk and 0. A.
~55-
Jfttvezwr
.
--caing -7, -Rasilati. 386
D' and 7- 1- Ust'Y&nov.-
U -
t
C43
y
389
13-. and V-_L_jbgh0rbftXgv,_. The photo_
sleatrftia Xrfea a X-Ag" On zMMIconductor Rsatlfler Calls
(MW~lA)
396 J
I. V. VOrob-yov, and a D latyshev.
or i
cord
Instnearics.
8
39
card 25116

-X41 710 0 66287
AUTHORS s Ryvkinp So Mop Konavalanko, B. M. SOV/181-1-11-22/27
TITLE: On the Dependence of Induced Conductivity of Cadmium
Sulfide an the Raergy of the Exciting Electrons
PERIODICAL: Fizika tverdogo telap 1959, Vol 1p Nr 11, PP 1757-1761 (USSR)
ABSTRACT: According to refereftee-1 it was jointly established with
Tu. S. Smetannilrovs. that for 2 to 30 kev electrons with
increasing electron energies, but with a total electron
current intensityp which remains at the same levels the
induced conductivity of the CdS reaches a saturation valuep
i.e. that this does not increase any more starting from
a certain electron energy. The Initial point of the
"saturation" in not Identical for different samples.
Additional investigations (Rot ~) established that with
small electron energies the decrease of the induced
conductivity is related to the fact that the electrons do
not deeply penetrate into the crystals'and therefore the
recombination processes occurring on the surface of the Metals
have &a increasingly important influence. Other authors (Rot 3)
carried out similar investigations on "voluminous" mono-
Card 1/2 crystals with 30 to 60 kov-electrons. Their measuring results

S/089/60/009/005/010/020
BO-V6/B07 0
v
AUTHORS: Konovalenko, B. M., R kin, S. M., 74aroshetskiy, I. D.,
Bogomazov, L. P.
TITLE: An Apparatus for Studying the Effect of Gamma Radiation KOP
on Semiconductor Materials Vi/
PERIOD CAL: Atomna'ya,energiya, 1960y fol. 91 No. 5, Pp. 408 - 409
TEXT: I In the present "Letter to the Editor", a cobalt apparatus for
the ~tvdy of the effect of gamma radiation on "the electrical proper-
ties of semiconductors is described. The a.pparatus was developed in
1958 by the Fiziko-tekhni:cheskiy institut AN SSSR (Institute of Physics
and Technqlogy of the AS USSR). The principaluse of the apparatus is
in the broduction of defects .that'are constant in time. To obtain
enough Aefects, fluxes of 1011 cm- 2sec- 1 are required. Fig.1 gives a
schematdc representation of the apparatus; Fi`g.2 shows'the experimental
chamber. Both are described in detail. The dose rate was measured at
differe~it points of.the chamber, and some of the results are given in
a Tablei. The highest dose rate of 128 r/sec was found at the center of
Card.1)3

85566
Ai~ Apjratus for Studying the Effect of S/089160/009/005/010/020
G~amma 11adiation on Semiconductor Boo6/.BO70
Materii1s
I
the chLbe'r flo6r; 10 mm above the floor it was only 72 r/sec; 20 MM
abovi 143 r/sec, 'and 40 mm above, 22 r/sec (all values refer to the
center of the chamber). There were no disturbances during the experi-
ment, the work was satisfactory in all respects. L. V. Maslova is-
thanked for help in measuring the field of gamma radiation. There
are
2 fin*es, 1 table, and 2 Soviet references.
SUBMITIED: April 6, ig6o
Legend-,to Pig.1- Scheme of the
I C660
apparajus: standard
sourcei activity: 400 &-equ.Ra;
2 - ir4n tank, 2.9 m. high, filled
2
complejely with water.
Base: ~.5x 0.6 M2;.well-thickness-
5 mm; 4 -coppel- tube 125 mm wide
on thei
;inside; 5 chamber with the sample.
Card.2h

Fig. 2
85566
S/089/60/009/005/010/020
Boo6/B070
Legend to Fig.2:
Scheme of the sample chamber. 1 - measuring
vessel; 2 - cover; 3 - rubber ring;
4 - hermetically closable opening through
which a cable (8) is introduced for the
measurement of the electrical arameters of
p
the irradiated samples; 5 - two Supports;
6 -,holder for the sample (7) made of
asbestos cement; 9 conical insert;
10 guide box.
Card 3/3
1

34228
S/18 62/004/002/011/051
B102YE138
AUTHORS: Konovalenko, B. M,,, Ryvkin, S, M,, and Yaroshetskiy~ I, D~
TITLE: Radiation defects caused by fast electrons in n-type
germanium
PERIODICAL: Fizika tverdogo tela, V. 4, no. 2, 1962, 379-382
TEXT: The concentration M of radiation defects, the number 1 of the
defect levels and their energies were determined for ii-type Ge
(r-j', ohm-cm. n =2-10 15 cm-3) which was irradiated by 2-5-Mev electrons..
2
The electron current density was - 5 txa/cm , pulse duration was - 2/Asec
and 1, -1 mm 3) were
repetition frequency was 50 see The samples (8,1 1
water-cooled. The electron energy behind the specimens was -1.5 Mev , so
-that for calculations the electron energy in the specimen was taken to be
-J;_' Mev, Carrier concentration was determined by measurinE the Hall
constant between 770K and room temperature. M and 1 were determined using
the relations: n 2 ' N d - Ml1 and n4 ' Nd- M(1-1); n 2 is the electron
Card o

3h228
S/181/62/004/002/011/051
Radiation defocts caused by fast- D102/BI38
~_oncentration in the conduction band at low temperatures, when all defect
leveis are filled up and all donor levels are completely ionized (section I
in Fig~ !)~, At high temperatures, when the upper defect levels are
completely ionized, n 4 is the electron concentration (section II in -
Fig. 1)~ m ;,.,as also determined from the activation energy of the upper
levels and the carrier concentration of the linear part of II, using the
rela~.`Lon n-n._, f~K exp(-AE-./2kT). N was calculated for the effective
C la C
mass m* = 0.25 m " For several different specimens, the following results
n 0 15 -3 15 -3
were obtained, Nd wa- (2.08 -2.26)-l0 cm. ~ MI was (1.6rj- 2.05)'10 cm
14 -3
It was (4.,2.5 - 5.2)-10 cm , I was 3.9 - 4.2 ', A% 0.20 - 0.23 ev, and
the radiation defect formation cross section was 1,45-1~55 barn; it "as
cal,,,ulated from a = M/JN Ge' ~ - electron flux density, NG, - number of Ge
atomis per cJ Electrons with -25 Mev were found t-o produse defects wIJ-.h
the followIng levels: E0-0. 24 ev, Ec..O. 36 ev~. EV-0, 25 qv ard Ev+O~ 11 ev,
There are 3 figares~ 2 tables, and 7 references: 3 Soviet and 4 non-
Soviet. The three references to English-language publications read as
Card 2/3

6 1,,/62//J04//0O2/Ol i lor l
0 1 L~
Radiatio:1 kicf(.ct,'
lollo,.,.,s: j.
.L
e t a 1 P hEi 2 U'r ..1ford.
ProEress ir, 2,
A S-*~ S 0 G I,,. T I ON institut im. A. F. Ioffe AN SSSIR
Lenincr,'IQ ~.ClYSICc~6uc.-.nical Instituto F. Ioffe
AS U-SR, Leningrad)
SU Blil --'D: August 8, 1901
Iq n
110 -
14.9-
f48 -
E-. 2 3 4 5 6 7 8
Card j

RYVKINt S.M.; DOBRM, V.P.; KONOVALEMKOt B.M.; TAROSHETSKIT, I.D.
Induced impurity breaidown in compensated germanium and,,
current oscillations related to it. Fiz.tver.tela 4 no.7t
1911-1914 11 162. (MIRA 16:6)
1. Fiziko-tekhnicheskiy institut imeni A.F.Ioffe AN SSSRp
Leningrad,
(Breakdownt Electrid) (Germanium--Electric properties)

L 13809-63 Twp(q"' T(M)/ AWTIG
fAMMSICU IM: AP300A10
AUMCH: VitTT k1b H. A#; Konavalo nkat no Mfmashovet3,,v
T Dftldn, S. Y,4;
=a-MY-90
I T121Z 1 0 nerated,defects IA germani'.4-1
SMM: Fizilm tyerdogo tela, -7":_ 5n0# Toa
TWIC TAOS i
61=m-rOy Smidondmtor irradiation
j raUatioa defect, momopolar
annealln~,Y, bipolar annealing, 9'emaniuz irradiation, Sera=iun defect, garmani=
I t%WVIWTI Ta,the late6t stage ot research on the subject,, dating back to 1959,_
a large nmber of a- and p-type specimens vas investigated. I,%-tnn_ gemaaium
WaS dopeed with antimmW and, had. a daaor coaceatratiba beetween 2-1012 to 8.1015
CM-5; p-type gemmium was doped uith gaMmm and had an acceptor ecacentratiom
betifeen 1012 to 1015 cm-S ,The source vas Co6O -at, a dosage of 2*1011,kV/Ch 2.6ea
and tenperature of IOC. The vork was alme& at clarifying the saturation of 'ir-
radiated specimens which occurs -after polarity reversal,, whereby further exposurei
to racliatica, however, prolmged,, - no longer affects the slope o2 the themal de.
pendence of carrier concentration, The latter'remaine equai to the activation
CuarGy. While the saturation process is evident up to very hIgIa coneentratims.
Card 1/2

KONOVAIENKO,, B.M.; RYVKIN, S.M.; YAROSHETSKIY, I.D.
Radiation defects in geftanium caused by fast 28 Mew. electrons.
Fiz. tver. tela 5 no.8s2O75-2086 Ag 063. (KERA 16:9)
1. Fiziko-tekhnicheskiy institut im. A.F.Ioffe AN SM., Leningrad,
(Germanium crystals-Defects) (Electrons)

-------------
T
k
M (EVT(i~)/~PF(c)/EPF(n)-2/Er-:C(t)/E74P(b) /Ftip(t) Pz-6/
PrWPu-4 IJP(c)/AS(6p)~-;YA~IL/SSD/ASD(a)-5/BSD/ESD(gs';I TSDftll I'D//GG,,"AT
ACCESSION N-R: AP4046643 S/0181/64/006/010/3166/3168
_U ioR Gerasimov, A. B.; Konovalenko, B. M.; Yaroshetskiy, 1. D..;
Barkalayal, A. A.
TITLEt Zmpurity photoconduqtLy#y'produced in gernianium by gamma-
SOURCE: Fizika tverdogo tela, v. 6, no. 10, 1964, 3166-3168
TOPIC TAGS: gamma irradiation, photoconductivity, germanium, for-
bidden band, line spectrum, carrier density, impurity conductivity
ABSTRACT: This ia a continuation of earlier research in which one
of the authors participated (S. M. Ry*vkin, R. Yu. Khansevarov, 1. D.
Yaroshetskiy, FTT v. 3, 211, 1961), using a larger -x-ray flux in
order to observe a more extensive line spectrum in th-P forbidden band
in this case q- and p-type germanium with initial carrier denelties n
(2--6) x 101-3 and P. (0.6--2) x 1013 cm-3 were used. The sampleR
-Ord 1/4

V L - 1206~-65
~:ACCESSIONVR: AP4046643
were exposed to y rays Erom Co6o at a dose rate 80--90 r/eec, using
am installation described elsewhere (B. M. Konovalenko( S. M.
Rv,,4vkin, 1. D. Yaroshetskiv, and L. P. Bogomazov, Atomnaya enerqiya
M V. 9, 408t 1960). The results are illustrated in Fig. 1 of the
enclosure. The spectral curves disclose a large number of bends and
ledges, pointing to a complicated spectrum of the local levels in
A the forbidden band. Measurements of all the investigated samples
I_rldicate the presence of the following energy levels: C + 0.52,
v
Ei + 0.48, E_ + 0.43, E + 0.41, E + 0.37, E + 0.33, E + 0.31,
%I V V V v
E., + 0.27. This spectrum coincides fully with the spectrum of
the local levels produced in the central part of the forbidden band
wher germanium is irradiated with fast neutrons, to which the levels
with, energies Ev + 0.31 and E. + 0.43 eV, which are symmetrical re-
lative to the center of the forbidden band, are added. it is fur-
ther concluded that the various levels introduced by impur-
ities in the central part of'the forbidden band are not due to any
I clustering of the point defects with the atoms of the doping impur-
Card

L120106-65
ACCESSION NR: AP4046643
ity. "The authors are deeply grateful to S. M. Ry*vkin for a discus-
sLon of the results." Orig. art. has. 1
figure.
ASSOCIATION: Fiziko-tekhnichaskiy inatitut im. A. F. loffe AN SSSR
(Physicotechnical InstitutelM .589R)
"iED: 1G-May64
ATD FRESS ! 3129
ENCL: 01
SUB CODE: 1c, f4p
No REP SOV: 003
OTHERt 000
Corl, 3/4

ESP-(p)Ij'FZD(t) AT/JD
ACCESSIOU NR: AP404665L
S/0181/64/006/010/3184/3186
AUTHOR: GeraFjirrovt-A.:B.--Konovale
TZTLE: Low-tsmqer&bUrG irradiatLon of jjEaanium with fast electrona-
SOURCE: Fizika
i,TOPIC TAGS:- germaniuml eleditrori- irradiat 'Lon, low temperature re-
search, dislocation effect, Annealing, impurity conductivity, photo-
conductivity
'ABSTRACT.- Preliminaryresult -presented an low-tnerature ir-
s are
radiation of n-type Ge with Rd = 2 x LG14--2 x 1015 cm , including
;,sar,31es without and with dislocations (dislocation density 107--10a
cm- ), and also of p-type Ge with N = S x 1014--4 x 1015 CM-3. Tjje
a
samples :were electrons at T -- 77K (the s am-
.ples were kept .in liquid nitrogen). The irradiated samples were
kept,in the nitrogen for several days until their resistance sta-
,Card

.7
-65
L 12027
iACCESSION MR:- AP4046651,
bilized, and then subjected to isochronous annealing to room tem-
perature with an. intemal of 2026-30* between annealing- points and with an
annealing time 15 minutes. After-each annealing, measurements were
made at 77K of the Hall coefficient, the conductivity, and of the
e
spectral characteristic of th impurity photoconductivity. All a-
:type sam -by irradiation with dosesof 2.7 x 1016' and
oTles were con verted.
l.. x 7 el/cm2-into p-type with a Fermi level located near
.= E th ivity~
v + 0-1 ev. A typical.plot of the variation of 1, e conduct
during the annealing is shown in Fig. I of the enclosure. The im-
purity photoconductivity spectral characteristic was strongly de-
pendent on the annealing stage, as illustrated in Fig. 2 of the
enclosure. The measurements an a-type samples Showed that the
low-temperature irradiation produces, other conditions being equal,
entirely different results than irradiation at room temperature*
This difference ia me-lifeat in the fact that at low temperatures the
Fermi level drops much lower. A noticeable difference in the Fermi
level is observed also when a comparison is made between the results
Card 2/5

77
7-65
;ACCESMU N-R: AP4046651--
of low-temperatureIrradiat.ion and irradiation at room temperature
of samples with and without dislocations. All the results indicate
that stepwise isochronous annealing brings about noticeable_ ahanges
in the structure of the rjadiation defects produced by low-tempera-
ture irradiation of germianium. "The authors are grateful to S. M.
Rv*vkin-and 'I. D. Yaroshetskiy E r a discussion of the work, and to
V. A. Petrovskiy for collaborating with the irradiation of the
samples." Orig. art. haaz 2 figures.

L 12027-05-
AC=ICU NRz AP4046651
MKIPSMI 01
Fig. 1. Typical variation of conductivity during the
comse of isochrmous a=alinqt a - n-tyN suple,
b - p-tTe sarVIe.
Card 4r-)
... .... .. ...

L 61896~6~5 EkIT (1)/F4T(m )JER.' -2/1/f %-T. ft)/-WP (b) /EWA- 'm%-2 Pm-6/P-' J,
ACCESSION JIR: AP5oi-9886 ilp/aiBl/65/0,07/008/25h5/2547
A. B. Konovalenkc),
s
Low-temperature annealing of ~rradialled with fast electron
S 0 UIR C 11' :Fizika tverdogo tela, V. Tt :M,5, 2545-2547
TI)PDI- TAGS,: annemling, metal heat treatment,_ elect ron bear. hardening
7-psults are presented of a-ri FLnnealing of
-4'1~h i:fferent donor
e Lectrons f, f luxc~, su'!'~
--rc)erat-ure range from 77 ~'-a.7es a D e r e
Ma z 1. U-'-~Vua. Li~ t.-LUX., C11 IIUI~:U.: zji.k-Kr:z~ Um~
-1 (be
ue
-~t' ions r,hLnged in tll- -12
:)n) . The temperature range oi 7 ally !he 5 ame- as
which chan-ed their n- Lnd
~r~ a' I- irradiation
t e
mayLIT.-uia;. Wi-uii a fur-hf!r --I
Ti-typ.'2 -7pecimens, while in the D-type spec4mens ~~t. ,-;'~iraine-j pracricsily constani;.
j - r~ti 5- Werc! deter-minf-d n- c~n! T,,-i.y-_Qe isotherm
::n ~nergles for all three stlages I
Card 1/2

L -6 169 6; -6
.ACCESISION NR: AP5019886-----
-,a an e s-.-
The.. 0~
ev, .08,-*-
i 27 1: E~; 0~066--+- M5) E
~E Or 63)
3
The activation energies for the second and third stages were close to the activation
ene-gy values for the migration of vacancies and interstitial atomz in genn-anium
ai:' ".6 ev); the second stage apparen' ly is vi th the nmugration of
ato=, while the third st;-ge -is t--) the cf vacancies.
' m d~-,fec S
=cage, it is possible that -r-v t
-I ~Ic the first stage the Ferad level shif-,ed i-on "D~Lndl, while
distribution of photoconductivity in specimens which changed their type
-4,ity
-lid not change. For the second stage ar, increase in carrier concen-
Jn - 11 ~, - - - - I
Of both types was characterist::-. ~-I~i7 ;T +-hP ",J rd 3tage the
level rose in all specimens. Orig. art. has: _I r A,,
.A-~~r)I- I jlk'~ T1.91i :Fi7iko-teklmicheskiy institut im. A. F. io~'Ie AIN SSSF., Leningrud
institute, All SSSR) ; Tbil-faskily nyy inlil-rsit~-t
3-,.ate University)
SUM~UTTIED:' 2514E'tr65 EINGL- 00 SUB CODE: MM,NP
NO REW SOV: 001 OTIMM' 003 A'-') FIFESS: 4OW
Card 212~11-11-~,N

L 651058-65 EWT(I )/EST~m)/EPF(c)/EPF(n)-2/T/1~c-,dA(h) 1JP(c GG/A T
ACCFZS1O1N NR: AP5019894 56 uR/ol8V65/OO7/oo8/2562/2563
AUniOR: Gerasimov, A. B.; Do~~dze N. D.; Konovalenko B. M FQO~ ~nS. M.~4/'
__jL_
TITLE: On the i!haracter of the hysteresiq of the volt-ampere characteristic of a-.
Germun-i'La. a-D Aunction Droduced by.irridiation
- VC, 17 -
SOURCE: Fizika tverdolNela, v. Ty no. 81 ~qfq_, 2562-2563
TOPTV TAGS , '-ermanium, volt ampere characteristic, electron bombardment, el C
i tric tqatereals, semiconductor research
ABSTRACT, The authars observed a hysteresis effect in the investigation of an n-p
junction produced by bombarding n-Ge single crystals with fast electrons. The
volt-ampere characteristic obtained at 77K when the sample was illuirdnated in the
barrier direction is shown in Fig. 1 of the Enclosure. The hysteresis consists in
the fact that when the voltage is increased the characteristic is rerresermed by
the lower cirve, when the voltage reaches V, there is an abrupt rise in the current,
and when the voltage is then decreased the characteristic is represented by the
upper curve. If the barrier-layer voltage is applied in pulses, the breakdown
occure- at voltages lower than Vj.. This hysteresis can be explained try assuming that
the sample consists of two series-connected parts, an element in which the break-
down takes place and whose volt-ampere characteristic has a negative-resistance
Card

Card 2/3

AP5019894
Fiq. Volt-anpere, characteristic of sariple in
the barrier directicn.
01

T, 01!~3,7-
1,61 (1) /11~,T (DO/1-UP (t)/T-,,r ITJI'(c),,- AT/JD
AI"6033561 SOUnCE, CODE,: Ull/Olill/r)G/0011/010/2994/2998
T
A
_k'T110r%: Gerasimov, A. B. Kqnovalenkg, B. M. Kotina, 1. M. Umarova,
ORZG: _ Physicotcchnic'al Institute imeni A. F. Iof1qe AN SSSR, Leningrad (Fiziko-
teklinicheskiy institut) AN SSSR
TITT-13: Kinetics of bipolar im Purity photoconductivity of silicon with radiation
d efects
SOURCE: Fizika tverdogo tela, v. 8, no. 10, 1966, 2994-2998
T OPIC TAGS: photoconductivity, bipolar phrktoconductivity, radiation, radiation
defect, conductivity
ABST RACT: Silicon samples with radiation defects at T = 77K were observed to be
characterized by distinctive kinetics in the increase of their impurity photo-
conductivity. An explanation is offered for this phenomenon, which is shown to be
related to the bipolarity of impurity excitation, and an approximate computation is
made of the kinetics of inverse overcharge for a case of low level excitation. The

Jl~ 09899_!!k7____
ACC NR, AP6033561
cross-section of hole capture at the radiation defect level Ec -0. 40 ev is deter-
mined. Orig. art. has: 7 formulas and 5 figures. [Authors' abstract]
SUB CODE: 201 SUBM DATE: 28Mar66/ ORIG REF; 004/ OTH REF: 002/

ACC NR, AP6036962 ( A, Al) SOURCE CODES UR/0181/66/008/011/3M/3231
AUTHORS Gerasimov, A. B.; Konovalanko, B. M.; 1,i~rvkin, S. M.; Umarova, Kh. F.;
Yaroshetskiyj I. D.
ORG: Physicotechnical Institute in. A. F. Ioffeq~,U SSSR, Leningrad (Fiziko-tekhni-
cheskiy institut AN SSSR)
TITLE$ Photoelectret state in silicon with radiation defects
SOURCES Fizika tverdogo telay Y& 8v no* lit 19660 3226-3231
TOPIC TAOSS photoelectret, crystalline silicon, radiation effect
ABSTRACTS The photoelectret state (PS) and the dependence of its properties on the
concbntration of free carriers and the concentration of locallevels in the forbidden
band were studied on two groups of n- and p-type silicon samples with different posi-
tions of the Fermi level after irradiation with fast electrons (which produced radia-
tion defects). The dependence of dark polarization on the time of application of the
polarizing voltage and its magnitude was measured, this being one of the chief charac-
teristics of PS. Differences in the PS of the two groups of samples were also Mani-
fested in the persistence of polarization. The spectral selectivity of the PS was
also determined. Analysis of the spectral curves showed characteristics corresponding
to certain local levels of radiation defects; the curves break off abruptly in the
shortwave range on passing to bipolar excitations starting at quantum energies at
Card 1/2
-.:ACC~NRs AP6036962
-.which the formation of minority carriers is possible-4 'The results of the study of PS
':-6ring bipolar excitation are Interpreted in the light of the substantial role played
'by optical charge exchange betweenAmpurity centers In the observed effect. Authors
take this opportunity to thank 1. N. Katina foe her assistance* Orig, art, bass 7
figures.
SUB COM 2o/ SWK DAZI 07"/. ORIG FjW8 009/ OTH RZF1 001