SCIENTIFIC ABSTRACT KOPYLOVSKIY, B.D. - KOPYSITSKIY, P.I.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000824520018-1
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: March 13, 2001
• Sequence Number: 18
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

KO B.D.; SYTTY. G.F.
Measuring the modulus and phase of the current amplification factor
of junction,crystal triodes at high frequency. Pbluprov. prib. I
prim. no.2:331-339 157. (KIRA 11&6)

!AUTHOR: AopylovskjZ,.~.A.,_~_ SOV/120-59-2-21/50
TITLE: A ka`sMthod of Measuring Life-time and Surface
Recombination VelociLy of Non-equilibrium Charge Carriers
in Semiconductors (Fazovyy metod izmereniya vremeni
zhiziii i skorosti poverkhnostnoy rekombinatsii
neravnovesnyldi nositeley zaryada v polupro-todnikakh)
P&RIODICALt Pribory i. tekhnika eksperimenta, 1959, Nr 2,
pp 75-78 (USSR)
ABSTRACT: The usual method of measuring life-time is to suddenly
expose the sample to a beam of light and to measure the
way in which the photo-conductive e.m.f. rises with time.
If a linear system is assumed2 this procedure may
equally well be replaced by one in which the light is
sinusoidally modulated and a phase angle In the steady
state is measured. The relationship between phase angle,
frequency and le , response time is given in Eq (7); the
response time in this equation is the effective lifetime
in the semiconductor and is related to the surface and
volume lifetimes by th-s inverse relationship of Eq (9).
According to Ref on a sample of great thickness and
Card 1/3 width, the relationship between surface recombination
velocity and surface lifutime is given by the equation

SOV/120-59-2-21/.50
A Phase Method of Measuring Life-time and Surface Recombination
Velocity of Non-equilibrium Charge Carriers in Semiconductors
between (9) and (10). The relationship is not always
so simple and a more detailed analysis has been made by
A.v. Rzhanov. Two particular cases may be distinguished;
1) for a thick sample formula (15) is given, 2) when
the sample is thin the corresponding foimalae for phase
angle and for surface recombination velocity are given
by Eq (18). Block diagram of method used is given in
Fig 2, using the narrow band amplifier 28.-1, a phase
shifter photo-cell and an oscillograph type 10-4. The
source of light is a 15-watt luminescent lamp wired in
the anode of a 6P6 valve; lifetimes of 5 ji and more may
be measured. Some results are given in Table 1 on four
samples measured at frequencies of 1, 2 and 3 ko/s. It
is suggested the method would be applicable to the
measurement of lifetimes down to 10-0 sec; this would
Card require modulation frequencies of 'the order of
2/3 3 megacycles and would be achievable using an ammonium-
phosphate crystal modulator. The author extends his

SOV/1 120 -- 59- 2- 21/50
A Phase Method of Measuring Life-time and Surfa-ce Recombination
Velocity of Nori-equilib.rium Charge Carriers in Semiconductors
thanks to S.V. Bogdanov, A.V. Rzhanov, V.S. VavLlov,
and L.A. Tumerman.
Card 3/3 There are 2 figuras, 1 table and 7 references, of which
2 are Soviet and 5 are English.
ASSOCIATIONs Fizichoskly institut AN SSSR (PL'1,.!,,sios Institute of
the Academy of Scienres, USSR)
SUBMITTED: February 15, 1958

21(7)
AUTHORS- Vavilovj V. S., Gippius, A,) A.p SOV/56-37-1-3/64
Gorahkov, M. M., Kopylovskiy. B. D.
TITLE: Radiation~ Combination in Germanium Crystals Subjected to a
Bombardment by Fast Electro 'na (Izluchatellnaya rekombinatsi-
ya v kristallakh germaniya, podvergnutykh bombardirovke
bystrymi elektronami)
PERIODICAL: Zhurnal eksperimentallnoy i teoreticheskoy fiziki, 1959,
Vol 37, Nr 1, pp 23-26 (USSR)
ABSTRACT: The authors describe the results obtained by investigations of
the infrared spectra accompanying the recombination of elec-
trons and holes in germanium monocrystals. Three samples were
investigatedp in which radiation was excited by the injection
of holes by means of various indium contacts; the third sample
was irradiated with 0.7 Mev electrons. The concentration of
the effective acceptor ievels of the defects, formed in
irradiation, was calculated as amounting to 5.1ol3cm-3 near
the surface, and as decreasing towards zero at - 0.3 mm. In
first approximation it may be assumed that the concentration
of recombination centers formed in irradiation is equal to
Card 1/3 that of the effective acceptor levels. The spectra of all

Radiation Combination in Germanium Crystals SOV/56-37-1-3/64
Subjected to a Bombardment by Fast Electrons
sample's showed an emission band (Pig 1) with a maximum at
1-65 A (0.6T ev) at room temperature and at 1.67 P (0,74 ev)
at 780 K. The displacement of the long-wave edge of this band
corresponds well to the variation of the width of the forbid-
den band of germanium. The temperature coefficient P was
determined as amounting to 3.2.lo-4 ev/degrees, which agrees
well with the results'obtained by other authors (Refs 1,7).
Figure I shows the shifting of the natural radiation band of
Ge in the case of a temperature variation of 300 per 780 K-
Figure 2 shows the spectra of the impurity- and natural
radiation of the Ge-sampleo at 760 K, figure 3 the spectrum
of impurity radiation of a Ge-sample of the ff-type without
treatment at 760 K. The curve has a maximum at 2.35 A (0-53 ev).
Figure 4 shows the spectrum of a N-germanium sample,
irradiated by 0-7 Mev electrons at 780 K (irradiation occur-
red at room temperature); also the curve for the sensitivity
of the PbS photoresistor within the same A -range is shown,
The intensity B of radiation near the maximum of the natural
radiation dpends on the injection current J (100 ga):
Card 2/3 B -JM , M fwl.7. The experiments, among other things,

Radiation Combination in Germanium Crystals SOV/56-37-1-3/64
Subjected to a 'Bombardment by Mat Electrons
showed that an increase in the concentration of the Frenkel
defects caused by fast electron bombardment causes an incream
in the concentration of the relativeintensity of the emission
band (maximum at 2.35 4). The authors finally thank B. M. Vul
for his interest in this inveatigation, and M. V. Fok and
11. N. Alentsev for their critique and valuable remarks; they
also thank L. N. Silonov for his assistance. There are 4
figures and 9 references, 1 of which is Soviet.
ASSOCIATION; Fizicheskiy institut im. P. N. Lebedeva Akademii nauk SSSR
(Physics Institute :*.meni P. N. Lebedev of the Academy of
Sciences, USSR)
SUBMITTED: January 29, 1959
Card 3/3

BDGDANOV, S.V.; KOPYLOVSKIY, B..D.
Applying the phase-shift method for measuring the life of--
-nor#equiLibrium charge carriers in semiconductors. Fis. 'u'ver.
tela 3 no. 3:926-934 -Mr 161. 'k*MM- 14: 5)
10 Flzicheskiy infititut Iiiial P.R. Iisbadevs. AN SUR, Moskva.
(Semiconftetors) (Photoelectric measi~ements)

s/i2o/62/000/001/03o/o6i
E140/E463
AUTHORS: Anufriyev, B.F., Dokhnovskiy, S.B., Zhurkin, B.G.,
Kk U 2 B.D., Penin, N.A.
.. , ylovskiy
TITLE: Transistor current regulator for electromagnets
PERIODICAL: Pribory i tekhnika eksperimenta, no.1, 1962, 129-131
TEXT: A classical current regulator is described'using
transistor circuitry for stabilizing currents 0 to 30 A for
electromagnets used in physical experiments. The voltage
reference is the drop across a manganin tape in an oil bath,
cooled by circulating water. This voltage drop is compared'with
that from a dry battery. The stabilization factor per *C is
3.03 x 104. The bandwidth of the regulator is 20 kc.
There are 2 figures.
ASSOCIATION: Fizicheskiy inatitut AN SSSR
(Physics Institutc AS USSR)
SUBMITTED: may 8, 1961
Card 1/1

19362
S/.120/62/60*0/003/042/0-4-a-
.2 (13 3 aO E032/Ell4
AUTHORS: Plotnilcov, A.F., Vavilov# V S., and Kop,lovskiy, B,D,_
TITLE: An apparatus for studying the spectra and kinetics of
photoconductivity in semiconducting crystals
PERIODICAL: Pribory i tekhnika eksperimenta, no-3, 1962, 183-187
TEXT: The apparatus was designed for studying photo-
conductivity in single crystals in the infrared part of the
spectrum at low temperatures. A block diagram of the apparatus
is shown in Fig.l. The infrared radiation is taken from an
1 .4
~I~C-12 (IKS-12) monochromator and is focused on the specimen 0
by a system of mirrors. The radiation reaching the specimen is
partly reflected on to 'a boloheter 9 whose output is fed into
an amplifier tuned to ~ c'.p.s. This is used to control the
incident intensity. The specimen is placed in a conventional
metal cryostat and maintained at -100 OK. Thick germanium and
silicon filters zij are used to reduca scattered radiation. ' The
specimen is connected by short leads to the input stage of an
amplifier,,which is in the form of a cathode follower with double
screening and negligible grid current. The double screening
Card 1/1

S)la
t2/004/007/017/037
B102YB104
0
AUTHORS: Adirovich, E. I., Gubkin, A. N., and Kopylovskiy, B. D.
TITLE: Measurement~of short lifetimes according to the phase
characteristic of the voltage transmission coefficient in
a circuit with a p-n junction
PEKODICAL: Fizika tverdogo tela, v. 4, no. 7, 1962, '1853-1662
TEXT: Adirovich (FTT, 1, 1115, 1959) has proposed what is called a phase'
method for measuring the relaxation times of electron processes in
h-f p-n junctions. This method makes it possible to determine -v from
purely electrical measurements. at frequencies which are two orders lower
than 1/T. It is of importance for T- 10-8- 10- 10, and is free from the
disadvantages of the other methods. Here the theory of the'method is
considered and its application to determine the lifetime of the
non-equilibrium carriers at the base of p-n junctions in diodes with-thin
or thick bases is described in detail. The possibility and the conditions
of applying it to measure other relaxation times in p-n junctions are also
J
Card 11go-

S/18 62/004,/007/017/037
Mea3uremerit of short lifetimes... B102/B104
discussed. c is determined from T -2y1w 5--56*io-3jYoj/V; y is the phase
anCle in radians, go the angle of the transmission coefficient for the
Conerator voltage in de,-rees, V the frequency and ti the cyclic frequency.
This relation holds if the inequalities
Np > A,., (8) rk -