SCIENTIFIC ABSTRACT KOPYLOVSKIY, B.D. - KOPYSITSKIY, P.I.

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CIA-RDP86-00513R000824520018-1
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S
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100
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November 2, 2016
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March 13, 2001
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December 31, 1967
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SCIENTIFIC ABSTRACT
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KO B.D.; SYTTY. G.F. Measuring the modulus and phase of the current amplification factor of junction,crystal triodes at high frequency. Pbluprov. prib. I prim. no.2:331-339 157. (KIRA 11&6) !AUTHOR: AopylovskjZ,.~.A.,_~_ SOV/120-59-2-21/50 TITLE: A ka`sMthod of Measuring Life-time and Surface Recombination VelociLy of Non-equilibrium Charge Carriers in Semiconductors (Fazovyy metod izmereniya vremeni zhiziii i skorosti poverkhnostnoy rekombinatsii neravnovesnyldi nositeley zaryada v polupro-todnikakh) P&RIODICALt Pribory i. tekhnika eksperimenta, 1959, Nr 2, pp 75-78 (USSR) ABSTRACT: The usual method of measuring life-time is to suddenly expose the sample to a beam of light and to measure the way in which the photo-conductive e.m.f. rises with time. If a linear system is assumed2 this procedure may equally well be replaced by one in which the light is sinusoidally modulated and a phase angle In the steady state is measured. The relationship between phase angle, frequency and le , response time is given in Eq (7); the response time in this equation is the effective lifetime in the semiconductor and is related to the surface and volume lifetimes by th-s inverse relationship of Eq (9). According to Ref on a sample of great thickness and Card 1/3 width, the relationship between surface recombination velocity and surface lifutime is given by the equation SOV/120-59-2-21/.50 A Phase Method of Measuring Life-time and Surface Recombination Velocity of Non-equilibrium Charge Carriers in Semiconductors between (9) and (10). The relationship is not always so simple and a more detailed analysis has been made by A.v. Rzhanov. Two particular cases may be distinguished; 1) for a thick sample formula (15) is given, 2) when the sample is thin the corresponding foimalae for phase angle and for surface recombination velocity are given by Eq (18). Block diagram of method used is given in Fig 2, using the narrow band amplifier 28.-1, a phase shifter photo-cell and an oscillograph type 10-4. The source of light is a 15-watt luminescent lamp wired in the anode of a 6P6 valve; lifetimes of 5 ji and more may be measured. Some results are given in Table 1 on four samples measured at frequencies of 1, 2 and 3 ko/s. It is suggested the method would be applicable to the measurement of lifetimes down to 10-0 sec; this would Card require modulation frequencies of 'the order of 2/3 3 megacycles and would be achievable using an ammonium- phosphate crystal modulator. The author extends his SOV/1 120 -- 59- 2- 21/50 A Phase Method of Measuring Life-time and Surfa-ce Recombination Velocity of Nori-equilib.rium Charge Carriers in Semiconductors thanks to S.V. Bogdanov, A.V. Rzhanov, V.S. VavLlov, and L.A. Tumerman. Card 3/3 There are 2 figuras, 1 table and 7 references, of which 2 are Soviet and 5 are English. ASSOCIATIONs Fizichoskly institut AN SSSR (PL'1,.!,,sios Institute of the Academy of Scienres, USSR) SUBMITTED: February 15, 1958 21(7) AUTHORS- Vavilovj V. S., Gippius, A,) A.p SOV/56-37-1-3/64 Gorahkov, M. M., Kopylovskiy. B. D. TITLE: Radiation~ Combination in Germanium Crystals Subjected to a Bombardment by Fast Electro 'na (Izluchatellnaya rekombinatsi- ya v kristallakh germaniya, podvergnutykh bombardirovke bystrymi elektronami) PERIODICAL: Zhurnal eksperimentallnoy i teoreticheskoy fiziki, 1959, Vol 37, Nr 1, pp 23-26 (USSR) ABSTRACT: The authors describe the results obtained by investigations of the infrared spectra accompanying the recombination of elec- trons and holes in germanium monocrystals. Three samples were investigatedp in which radiation was excited by the injection of holes by means of various indium contacts; the third sample was irradiated with 0.7 Mev electrons. The concentration of the effective acceptor ievels of the defects, formed in irradiation, was calculated as amounting to 5.1ol3cm-3 near the surface, and as decreasing towards zero at - 0.3 mm. In first approximation it may be assumed that the concentration of recombination centers formed in irradiation is equal to Card 1/3 that of the effective acceptor levels. The spectra of all Radiation Combination in Germanium Crystals SOV/56-37-1-3/64 Subjected to a Bombardment by Fast Electrons sample's showed an emission band (Pig 1) with a maximum at 1-65 A (0.6T ev) at room temperature and at 1.67 P (0,74 ev) at 780 K. The displacement of the long-wave edge of this band corresponds well to the variation of the width of the forbid- den band of germanium. The temperature coefficient P was determined as amounting to 3.2.lo-4 ev/degrees, which agrees well with the results'obtained by other authors (Refs 1,7). Figure I shows the shifting of the natural radiation band of Ge in the case of a temperature variation of 300 per 780 K- Figure 2 shows the spectra of the impurity- and natural radiation of the Ge-sampleo at 760 K, figure 3 the spectrum of impurity radiation of a Ge-sample of the ff-type without treatment at 760 K. The curve has a maximum at 2.35 A (0-53 ev). Figure 4 shows the spectrum of a N-germanium sample, irradiated by 0-7 Mev electrons at 780 K (irradiation occur- red at room temperature); also the curve for the sensitivity of the PbS photoresistor within the same A -range is shown, The intensity B of radiation near the maximum of the natural radiation dpends on the injection current J (100 ga): Card 2/3 B -JM , M fwl.7. The experiments, among other things, Radiation Combination in Germanium Crystals SOV/56-37-1-3/64 Subjected to a 'Bombardment by Mat Electrons showed that an increase in the concentration of the Frenkel defects caused by fast electron bombardment causes an incream in the concentration of the relativeintensity of the emission band (maximum at 2.35 4). The authors finally thank B. M. Vul for his interest in this inveatigation, and M. V. Fok and 11. N. Alentsev for their critique and valuable remarks; they also thank L. N. Silonov for his assistance. There are 4 figures and 9 references, 1 of which is Soviet. ASSOCIATION; Fizicheskiy institut im. P. N. Lebedeva Akademii nauk SSSR (Physics Institute :*.meni P. N. Lebedev of the Academy of Sciences, USSR) SUBMITTED: January 29, 1959 Card 3/3 BDGDANOV, S.V.; KOPYLOVSKIY, B..D. Applying the phase-shift method for measuring the life of-- -nor#equiLibrium charge carriers in semiconductors. Fis. 'u'ver. tela 3 no. 3:926-934 -Mr 161. 'k*MM- 14: 5) 10 Flzicheskiy infititut Iiiial P.R. Iisbadevs. AN SUR, Moskva. (Semiconftetors) (Photoelectric measi~ements) s/i2o/62/000/001/03o/o6i E140/E463 AUTHORS: Anufriyev, B.F., Dokhnovskiy, S.B., Zhurkin, B.G., Kk U 2 B.D., Penin, N.A. .. , ylovskiy TITLE: Transistor current regulator for electromagnets PERIODICAL: Pribory i tekhnika eksperimenta, no.1, 1962, 129-131 TEXT: A classical current regulator is described'using transistor circuitry for stabilizing currents 0 to 30 A for electromagnets used in physical experiments. The voltage reference is the drop across a manganin tape in an oil bath, cooled by circulating water. This voltage drop is compared'with that from a dry battery. The stabilization factor per *C is 3.03 x 104. The bandwidth of the regulator is 20 kc. There are 2 figures. ASSOCIATION: Fizicheskiy inatitut AN SSSR (Physics Institutc AS USSR) SUBMITTED: may 8, 1961 Card 1/1 19362 S/.120/62/60*0/003/042/0-4-a- .2 (13 3 aO E032/Ell4 AUTHORS: Plotnilcov, A.F., Vavilov# V S., and Kop,lovskiy, B,D,_ TITLE: An apparatus for studying the spectra and kinetics of photoconductivity in semiconducting crystals PERIODICAL: Pribory i tekhnika eksperimenta, no-3, 1962, 183-187 TEXT: The apparatus was designed for studying photo- conductivity in single crystals in the infrared part of the spectrum at low temperatures. A block diagram of the apparatus is shown in Fig.l. The infrared radiation is taken from an 1 .4 ~I~C-12 (IKS-12) monochromator and is focused on the specimen 0 by a system of mirrors. The radiation reaching the specimen is partly reflected on to 'a boloheter 9 whose output is fed into an amplifier tuned to ~ c'.p.s. This is used to control the incident intensity. The specimen is placed in a conventional metal cryostat and maintained at -100 OK. Thick germanium and silicon filters zij are used to reduca scattered radiation. ' The specimen is connected by short leads to the input stage of an amplifier,,which is in the form of a cathode follower with double screening and negligible grid current. The double screening Card 1/1 S)la t2/004/007/017/037 B102YB104 0 AUTHORS: Adirovich, E. I., Gubkin, A. N., and Kopylovskiy, B. D. TITLE: Measurement~of short lifetimes according to the phase characteristic of the voltage transmission coefficient in a circuit with a p-n junction PEKODICAL: Fizika tverdogo tela, v. 4, no. 7, 1962, '1853-1662 TEXT: Adirovich (FTT, 1, 1115, 1959) has proposed what is called a phase' method for measuring the relaxation times of electron processes in h-f p-n junctions. This method makes it possible to determine -v from purely electrical measurements. at frequencies which are two orders lower than 1/T. It is of importance for T- 10-8- 10- 10, and is free from the disadvantages of the other methods. Here the theory of the'method is considered and its application to determine the lifetime of the non-equilibrium carriers at the base of p-n junctions in diodes with-thin or thick bases is described in detail. The possibility and the conditions of applying it to measure other relaxation times in p-n junctions are also J Card 11go- S/18 62/004,/007/017/037 Mea3uremerit of short lifetimes... B102/B104 discussed. c is determined from T -2y1w 5--56*io-3jYoj/V; y is the phase anCle in radians, go the angle of the transmission coefficient for the Conerator voltage in de,-rees, V the frequency and ti the cyclic frequency. This relation holds if the inequalities Np > A,., (8) rk -