SCIENTIFIC ABSTRACT KROKHIN, N. G. - KROKHIN, S. A.

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• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000826620005-2
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: June 14, 2000
• Sequence Number: 5
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

GF11FER111, II.I.; :001~~~-JMFMKIY, N.N.
Studyi the process of rectification st lowered pressures.
ng
Trudy TNIISNDY no.P:12?-12Q 154. (.MLRA 10-7)
(Plate towers) (Distillation, Fractional) (Vanor pressure)

POXHIN, N.11. - VIARTSX7Y. N.N.
Studying the efficient o-oaration of distillotion spoorptuo.
Trudy VNIUSIM no.2;129-114 154. (YLRA in:?)
(Distillation spmr.%tus)

G-10, 'PER I It. N. 1. IMOKH INA~, N Gw YM!XINA
Studying the distillation of fatty-acid ethyl aster mixtures.
True,y VNIISNDV*no,2:134-1,18 154. (MRA 10:7)
(Distillation) (Fatty acids)

-I -- - -~-- ---- - 71- - I-.-
G'.r,L'PYEIN, N.I.-, MOKHM 1wi - BOGAGMVA, K.I.: M.F.4-MIT, N.F.
Une of distillation for purifying coumarin Droduction waste acetic
acid. Trudy THIISM no.2:138-119 154. (MLRA 10:7)
(Acetic acid) (DistilIntion) (Coumnrin)

G?LIP121N, II.I.; KROXHIN, N.(),;.jP.QHI5XNKO. A,T.
Distillation (cohobstion) of sugenol aqueous solutions. R".ort Un.l:
Cohobstion in cube amaratus. Trudy VNIISHDV nc.1:141-146 154.
.Ulu.
(Distillation) (Eugenol)

r - _; - -- -- -
I ,
GELIPTRM, 11.1., XRO),-,.-IN. IN,G - BWACMA, K.I.
1~ --- dkii
Deh,.rdrntlon of chrPte *Inn squ*ous solutions (UtIlInmtion of the
produt--#.I,-r by-roducts). Trudy V'NIISY;DV no.?:165-1466 1514.
(14' ,RA In: 7)
(Alume)

-;~, - Im
-7=-
71
- '..l. . 1,,,,- 11 MMM mmmmgm~~
- -.,:- i , , --
m- - 7 -1

GILIPIRIN, N.I.: KROXHIN, N.G.; JISMVA, yo.N.
Pilot PlAnt tostime, of the method of continous extraction of
vanillin in a spray tower. Trudy VVIISMV no.4:151-154 158.
(Vanillin) (HIRA 12:5)
(Ixtractioti (Obsimistry))

KROKKIN, N.G.; ZILENCTSKIY, N.N.
~f "
Best dintillatiem procedure for perfume fractions of geranium
and coriander oils. Trudy VNIISHDI no.4:181-185 '58.
(MIRA 12:5)
(Essences and essential oils)
(Distillation, Fractional)

Recovery of linalogl frox coriander oil and linalylacetate
from clary sage oil by vacuum distillation. Trudy VNIISNDV
no.4:185-IR9 ,58. OGRA 12:5)
(Ingences and essential oils)
(Distillation Fractional)
(Linaloall

Axtrac6n~-f,rom solutions by condensing vapor phase nxtraction
ngents. Zhur. prikl. khim. 11 no,7:1026-1036 Jl 158.
(MIRA 1119)
1. Vsmsoyuziqy nauchno-iseledovateVskiy inntitut sintnti-
chemkikh 1. natural'TWkh dushistykb vashebeetv Ministarmtva
prom7pblonnnatl prodovolletvonzVkh tovaroy SGSR.
(Ixtrna'tion (Chataistry))

TOVBU. Issak Koisayevich: FAMXRG. Tevesy Yefinovich; DOROTOT. L.F.o,
insh., retmeAsonti 13=111# N,G.t kand.takha,nauk, qmtsrsdo;
RISK, G.S., red.; .1 takhn.red.
[Technological designing for fat processing snterpriesel
refining and hydrogenation of fatal T~khnologichsskoe
proaktirovanis shirqwrerabatyvaluahchikh prodpriiatli.-
rafinatmits i glilrogenizatelia shlrov.' Moskva. Pishobe-
-promixdat, 1959. 'J98 pe (NEU 12:6)
(Oils and fats)

- -- 1.. 7 ~f.: T7~~, n-, Lfc] 1~ --1--'. P- ~- ~ ------

Category t U5SR1i'th-.oroticix1 Physics - f~qantum FiAd 1"hoory B-G
.',bs dour : Rof Zhur - Fizikaj No 3, 1957, No 5703
.uthar I Borcstctakdy.' V.B_. I .. Mlibuil-criv, .'..K.
Q WAAM Q 11
Ti tlo Coitcorning th.~ RIHM-on Curroci-Ron to tho,o 4icso;i 1;au-notio
Eonc;nt.
Orig Pub i Zh. ukaporim. I toor. Mild, 1956j, 30, No -11, 786-789
.',ba brz~ctiTh(; dovi,-.tion from tho Scinvingor f ormuln ina cnlculat-cd for
tho r-idiation currootion to tho rmignotic momrixt undor th,
assimiption that th;. ixitoGrr~tion with ros,,-_~,~ct to th, moracn-ta
must b i rostriotc " t~ an uppor limit ',\ , vhoro h/ 'XI
10- 4 am, In conn:)ction Ath th~- r(;sqlLs obtainor'l gy Landau
'3
.nd Pomornnchuk (RofDrat Ziiur Fizika, 1956, 157.5?,, 21813, 21,14)
y of the modorn fiold th~ i t
witte. rning tho iuapplicabilit- o z: a
auch diatancris. If chis corroctioii is writto.i in th_- forn
A T ) (1 F), thoq d F -: (2/6)mo/ \, Tihorc
ml//,;, thu mass of tl.o partiolc. For th, , 14 -in:,son, th~.Ovnluo
of j F rany turn out to b,. not too amr.11.
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S/056/60/038/03/31/033
70 a B006/BO14
AUTHORSt Basov, N. G , Krokhint 0, N., Popov, yu. M.
TITLEs Semiconductor
_Amplifieri? and Gonerators';5'Whose Carriers Have
a Negative Effective ia'se
PERIODICALt Zhurnal ek8perimentallnoy i tooreticheskoy fiziki, 1960,
Vol. 38, No. 3, pp. 1001-1002
TEM KrnAMAr (Ref., 1) made the suggestion to use carriers with a
negative effective mass in semiconductors for the amplification and
generation of 'elect-romagnetic waveaO since negative losses will thus
occur during the motion of carriers in the field. In order to produce
such.states it is advisable to use a constcnt electric field. In the pre-
sent "Letter to the Editor" the authors demonstrate that it is impossible
to produce states with negative losses b~ u;ing a constant electric
field. Tho condition wf(E 2) 11 _f (f I )] n(tw_v (F_1)[1_f(S 2) 1 n
wn 2)_f(61)'1 > 0 must be satisfied for tho energies t 2 > f 1
(f~_) -is the electron distribution function, n(l%,,j) is the number of
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Semiconductor Amplifiers and Generators Whoes S/056/60/038/03/31/035
Carriers Have a Negative Effective Mass BOo6/BO14
photons of an energy Jw e2- fl, w is the probability of spontaneous emig-
sion), To obtain amplification, it was necessary that 3f(t)/at ~- 0, at
least at some points of the range f 2- fl. This is nowhere the case if
thermodynamic equilibrium is to be maintained, Direct calculations
(Refs, 2-5) have shown that it is impossiblo to disturb thermodynamic
equilibrium so strongly that af(E)/ar, > 0, if E - const, as was assumed
by Kroemer. Also If in the case of anisotropic %ones some components
of the mass tensor are negative for certain values of the quasi-pulse,
3f/e1F_;- 0 cannot be attained if Z - const. This is due to the fact that
in the case of semiconductors the interaction constant for acoustical
and optical phonons is of the same order of magnitude. For a system of
semiconductors with negative losses it is therefore necessary to obtain
states with negative temperatures if af/ap > 0. There are 6 references,
3 of which are Soviet.
ASSOCIATIONs Fizicheskiy inatitut im. P. N. Lebedeya Akademii nauk SSSR
:(Physics Institute imeni P. N. Lebeday of the Academy of
Sciences, USSR)
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Semiconductor Amplifiers and Generators Whose
Carriers Have a Negative Effective Mass
SUBMITTEDi December 17, 1959
82430
S/056
,/60/038/03/31/033
Boo6/BO14
K
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.83601
3/056/60/038/005/034/050
o24.7700 B006/BO63
AUTHORS: Krokhin,-O. N., .1-3pov, Yu. M,
TITLE: Slowing-down Time :)f Non-equilibrium Carriers in Semicon-
ductors
PERIODICAL: Zhurnal eksperimewallnoy i teoreticheskoy fiziki, 1360,
Vol. 38, No. 5, PPI 1589-1592
TEXT; The determination of the slowing-down time of minority carriers is
particularly important to the development of quantum-mechanical semicon-
ductor generators and amplifiers. flegative losses in semiconductors may
occur if the production time for negative temperatures in them (slowing-
down time) is shorter than the lifetime of the produced external excitations
of fast electrons and holes. The authors regard those electrons (holes)
as minority (fast) carriers, the initial energy Eo of which is considerab-
ly higher than the mean thermal or degeneration energies (if the gas is de-
generate), but not higher than the threshold energy of impact ionization of
the valency band. In sufficiently pure crystals of regular shape, the
slowing down of electrons is due to scattering by lattice vibrations. Im-
purities and defects need not be taken into account. The following
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83601
Slowing-down Time of Non-equilibrium :3/056/60/038/005/034/050
Carriers in Semiconductors .1006/B063
calculations, which are only made for electrons of the conduction band,
hold analogously for the holes of the valency band. The calculations pro-
ceed from the equation of motion for the elootron distribution function
f(') in the crystal, taking the Fermi degeneracy of the electron gas into
p
account. In order to investigate the slowing-down of electrons In the ab-
sence of an electric -field and with f(4) is. f(E), where E is the electron
energy ( F_ - p2/2m), the authors firstP give expressions for af(E)/at,
the electron lattice collision time T, the energy state density q(E), and
the variation of the mean electron energy in time dE/dt. By use of these
relations they study the slowing down of a single electron without con-
sidering degeneracy. f(E)Q(E) - 6(E - E) holds in this case. The case of an
acoustic phonon is treated first. For the slowing-down time from E to E
due to electron scattering3by acoustic lattice vibrations one obtains:
t - (2/a )(.E-1/2_.E -'/'), a - 2(2.) 1/2u2/1 (T)kT, where 1 is the mean
0 0 0 so ac
free path of the electron in scattering, u is the velocity of sound, and,T
is the lattice temperature. Next, the authors investigate the slowing down
of a fast electron by optical lattice vibration3 of a valence-type semi-
conductor. An expression is derived for topt* Furthermore,
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Slowing-down Time of Non-equilibrium 9/056/60/038/005/034/050
Carriers In Semiconductors B006/Bo63
t
opt so 10-2 holds. In the following, degenoracy is taken into account
/t
and the alowing-down times are oompared with ono another,both regarding
and disregarding degeneracy. It is found that the slowing-down time is
not eesentially influenced by taking degeneracy into account. N. 0. Basov
is thanked for discussions. B. I. Davydov and L. V. Keldysh are mentioned.
There are 5 references: 3 Soviet, I US, and I British.
ASSOCIATION: Fizicheskiy institat im. P. N. Lebedeva. Akademil nauk SSSR
(Institute of Ph4sice imeni P. 11. Lebedev of the Academy
of Sciences jjSR
j
SUBMITTED: December 17, 1959
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86932
S/056/60/039/005/051/051
-17e) o ( /40 Y 3V 31 lh4r'? B006/BO77
AUTHORS: Basovt N. G.9 Krokhin. 0 Popov, Yu. M.
TITLE: The Possibility of an Application of Indirect Transitions
to Produce Negative Temperature in Semiconductors.
PERIODICAL: Zhurnal eksperimentallnoy i tooreticheskoy fiziki, 1960,
Vol- 39, No. 501), PP- 1486 - 1487
TEXT: In some semiconductors, especially in germanium and silicon, the
infrared emission and absorption edges corrospond to the indirect tran-
sitionq9that is during emission and absorption of a photon emission or
absorption of a phonon takes place simultanoously. The long wave emission
corresponds to simultaneous emi83ion of photon+phonon on these ' transi-
tions. In a sample with a low enough temperature where the phonons
necessary for absorption are missing in the lattice, the emission with
the longest wave will not be absorbed and here the sample will be prac-
tically transparent. If the carrier concentration is increased with
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86932
The Possibility of an Ap2liciition of
Indirect Transitions too 'rodu'ce Ne.ffative
Temperature in 3et,,iicon,.4icIorn
S/05 60/039/005/051/051
B006YB077
respect to the e,.,ui14br4_1 concentration by means of any mechanism
(exposure, electric :iald etc.) then under certain conditions a negative
temperature should occur ,,;ith respect to the considered transitions.
The conditions for ruch .1 process should be: IJ r/Wf < Teff/T, wheretJ r
and W f is the photon ~tnd phonon frequency, T the temperature of the
sample and T eff temperature where the levels of the con-
duction band with respect to those of the valence band are filled. For
germanium would hold W r /Ijf-25 and thus Teff /T >25, which would be ful-
filled for a sample at ficlitrm temperature if the excitation is brought
about by a radiation source or an external electric field. There are
10 references: 1 Goviet, 8 US, 1 Czechoslovakian.
ASSOCIATION: Fizichonkiy institut im. P. N. Lebedeva Akademii nauk SSSR
(Phynics Institute imeni P. N. Lebedev, Academy.of Sciences
USSR)
SUBMITTED: October 3, 1960
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88459
S/056~60/039/006/05i/063
B006/BO63
AUTHORS: Basov, H. G., Krokhi _0. N.
TITLE-. Conditions for Electron Excitation of Negative Temperature
States in a Gas Ifixture
PERIODICAL: Zhurnal skeperiment<noy i teorsticheskoy fiziki, 1960,
Vol. 39, No. 6(12), pp. 1777-1780
TEXT: A study has been made of the conditions, under which negative
temperatures may occur in a gas discharge of a binary gas mixture, in
which the atoms have the same energy levels. Experimental and theoretical
publications by Sandors, JavanI.S. G. Rautian, I. I. Sobellman, A.
Ferkhman, S. Frish, V. K. Ablekov, M. S. Pesin, and I. L. Fabelinskiy are
discussed in the introduction. Javan has shown that In a binary gas
mixture, in which two energy levels of different atoms are very close to
each other, excitation may pass from an atou of one gas to an atom of the
other. This has a great influence on the dintribution of excited states
among the atoms. Following the results obtained by Javan, the authors have
studied the case where the energy levels coincide, on the assumption that
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88459
Conditions for Electron Excitation of Negative S/056/60/039/006/05i/063
Temperature States in a Gas Mixture B006/BO63
Te~> Ta. If the lifetime of an excited state were only dopendent on col-
lisions of second kind between electrons and atoms, the nvmber of excited
atoms would be given by N iAN 0 exp(-Ei /kT a), whore E iis the excitation
energy; N 0 is the number of atoms in the ground statel and T e is the
electron temperature. On account of the conversion of excitation energy
into kinetic energY and due to radiation processes, N i is actually much
smaller. This bfact is considered by referring the temperature only to two
levels t' - f-i of the atoms of the gases & and b. For such levels it may
be assumed that the interaction cross section for the atoms has a resonance
character. Consequently, the excitation transfer between atoms a and b is
considerable. Such an interaction between Ea and E b can lead to a
i i b a
leveling of temperature. If, for example, To is first greater than T I E
at 1. 1 1
will be excited with a temperature T i )Ti, and a negative temperature is
likely to occur between the level t aand a level ea 0)1 R is the exoiton radius; u eff " (M ex kT/2Xh2)322j
n 2(m kT/2n% 2)3/21 p f - 2 kT/2 xh2)3/2 where max, M P denote
eff 0 a ef (mh 's mh
the manses of the exciton, electron, and hole, respectively. Negative
abaorption occurs when the induced radiation, equal to n rdI ex (nris the
number of quanta in the given oscillator), becomes greater than the
absorption by free carriers and excitons which is equal to NC(OrL)+Cr an+crhp)dti
a is the absorption cross section, N the number of quanta, and c the
velocity of light. From a discussion of Eq. (7) it follows that a
negative coefficient of absorption can occur in indirect exciton
recombination in semiconductors at a departure from equilibrium
concentration that is much leas than in recombination of free carriers.
There are 5 references: 4 Soviet-bloo and 1 non-Boviet-bloo. The
reference' to the Engli8h-language publication reads as follows: W. P.
Dumke, Phys. Rev., 105, 139, 1957. '1.3
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Sll8V621004100310441045
Negative absorption through ... BIOI/B102
ASSOCIATION: Fizicheakly inistitut im. P. H. Lebedeva AN SSSR, Moskva
(Physics Institute imeni P. N, Lebodev of tho AS USSR,
Y10000w)
SUBMITTED: January 2, 1962
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BASOV, N. G.Lqq~!~~j Popov, J. M. (1,opcv, Yu. )4.]
Negative absorption coefficient at irAirect transitions in
semiconductors, Act& phya, Hung'14 no*2 31231-240 162.
1
l* P* Po Lebedev Physical Institute of the Academy of Sciences
USSR# Moscowp USSR. Presented by 0. Ozigeti [Gyorgy Szigaii]

BASOV, N.G.;.KRMIN., 0 K n 0,N,I; ORAEVSKI, A.N. (Orayevskiy, A.N.Ij
.
Sj=~
STRAHOVSKI, G.M. a i ,-G.M.); CIHACIEV, B.M.
[Chikhnahav, B.M. -
Possibility of studying relativistic effects vith the aid
of the molecular and atomic standards of frequency. Analele
.mkt 16 no.2t83-146 Ap-Je 162.

L 14,)'72--6- 2/F-7(t )-2
-f~710-D/E,,~l)-..3/rUDC/AiG~/AFWL H-4/FZ-01-4 G1j'/ A T~WG/J I iR/K/F-TI/ I J IC
ACCESSION V'R- AP3005363 G Iola l16 3/005 /068 /2~~' /2!&
A"L OR: Basoy 11. -0.1 Krokhin,-O. N. IFY
I_!-_ cv~gj
TITLE: Transformation of strong monoebromatic re4lation into electric ctirrent
SOURCE: Pitika tvardogo tela,, vo 5# no* 8# 1963p 2384-23M
TOPIC TAOSi semiconductor laser,. 3 tght-t6-electri city conversion,, light-to-
current converter, Inhomogeneous isemiconductor laser,, ligUt transducer,, laser
detector
ABSTFACT: It is cbo%n.N that strong monochromatic rl&ation can be converted
into electric currentnn an Inhomogeneous p-i-n aelAconductor. with i~jrongly
degenerate p and n regions. Space-coherent monocirromatic r&Uation is focused
on the semiconductor, producing electron-hole palra. In this case the chemical
potential in the electron region of the semiconductoi (Ce) vill coincide with
the Ferni quasi-level of electrons in the I region (P.), and the chemical po-
tential In the hole region ) vill coincide vith the Fermi quasi-level oi the
holes in the I region (lip). %,combination current can be made small If
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L 11,972-63
ACC-P-SSIM Mt AP3W5363
Ce Ev) kT "d 4p ttp .(tLe Ec) > kT,
where Ec and EV am energies corresponding to the -sfte of the electron and hole
zone, respectively, and T to the temperature of ths ample. These conditions
require strong degeneracy of the n and p regions. The potential differetca
across the eemple will then ber 11W/e. When current is produced, the absorption
fuctor is a function of the current and the tr=ber of quanta absorbed per unit
time becomes jRdV + (I/a), where I Is the current and V the vol=e in which
recombination occurs. The expreanion RdV includes recombination in the i region
as well an the recombination current. The efficieacy factor 'n, i.e., the ratio
of the power at the load Rn to absorbed power equnlo
I2RU
+
For large values of n to be obtained, two conditions must prevall: 1> a fRdV
and Rn > Ri, where Ri is the internal re.sistance of the device (mainly of the I
Cord 2/3

L 11.972-63
-ACCMSION NR: AP3005363
region). The efficiency can approach unity. Strongly doped regions form a
uaveguide along which the raliation to propagated. Dimensions of the i region
ahould be selected an as to ensure full absorptim of the r&Mation. Another
p,issibility lies in the utilleation of the coherer,ca of the =iaoion td creatb
aa optical oemillator analogous to a senmlconductca- oscills-tor.
ASSOCIATION: Fizicheekly Inst1tut im. P. 11. Lebedeva, AN SSSH, Moscow (Phyales
InstitiltP, AN SSSR)
~SMMIITED: P6Apr62 DAM AM: O63ep63 ESM: 00
SUB CODE: P11 NO HU 510vt 002 or
m; oo
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KROKHIIIf O.N.
Problem in the generation of optical radiation. VeBt. AN S:SR 33
no.8:62-69 Ag 163. (KM 160)
(LaserB)

ZHARKOV, G.F.; KROKINN, O.N.
Summer schoolo of phynics In Franco and Italy. Veat. AN
SSSR 33 n0-11,111-113 N 163. (MIRA 17:1)

KROUPIR 0.11.
Optical uantum generators using semiconductors. Priroda 51
[i.e. 521 no.500-91 163. (MIRA 16:6)
1. Fizicheakiy Institut im. P.N. Lebedeva, Moskva.
(Lasers)

EWA(k)/EWT(I)/FBD BDS/T.-2/3W2/EFC(b)-2/ES(t)-2-AFr-TC/kSD/
ACCIM31011 MR: AP3000510 s/owo/63/150/002/0275/0278
AUMCii: Bagayev, V. S.; Basoy, 11. G Be Me
(Correspaiding K zbor, All SSSR); Bul ..
(Co.-r~_,sp-m- ~-g Member, AN SSSR); Xojv)y*!ovskjy, Be D.; KroRhi:nj 0, N.;
Be Fee Mvwhch v. A.
TITLE: Semiconductor quantum oacillator based = the P.a transition in GaAs
SOMI CE: All SSSR Doklady, V. 150, no. 2.. 1963, !?'75-278
TOPIC T=: laser, galli= arsenide laser, Infrared
ABSTRACT: Coherent emission has been obtained from p-n transitions on GaAs at
77K. Tbe current Valse length vas less than 3 pee and had a repetition fre.-
qutney of 50 pps. Threshold current density vwi about 104 amp/cm2. Crystal
spcc-L~aeas -were prepared by diffusing impurities into strongly doped GaAs to
stcure a sufficiently flat and optically homogermoun p-n transition vith an
area of 10-3 cmn. Tvo ourfacea perpendicular to the transition plane were
given optical flats and a high reflectica coefficient. The widt'a of the nar-
rawed line Voyond the emission threshold was I to 5 As The sharp narroving of
the line testified to the establishment of cavity feedback and ccc=ence=ent of
oscillation. The brightness of the -crystal, obterved throuSh an infrared
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L 11280-63
ACCESSiai rm: AP3000510
microsco- hr
,pe, sharply increased upon croosing th* - esho14; the bright rigicn of
-L%lh,a crystal was 10 to 15 )A wide. Wo photoz of the bright regicca are given,
corresponding to injection currents of 10an3 IS (s. Increasing current dencity
reduccd width of the emitting, reglons, apparg,-ntly because of t%,~ otirialated
reca-.M.nation procecoes occurri4g in an area of shorter initial diffusion
lan,r.h. Scmt specimens rtanifested simultaneoun emiasica frcm two transitio.-w
iii parallel planes spaced)O-jL ayart. "TIbe autho;7s express their thankr
Ya. 1Croll for placing the monoex7stals of gallixxi axrenide at their disposal,
Yu. 11, Kopoley, N. IT.- Bomun- I L. 11. Novak and Yuq F. Zakharov for their help
with the work an o V f.--Raj~~ ~hev M. ITcin-f&~rc-Ffbir--a vealth of
valuable advice." Orig. art. hae: 13 formulas and 3 figures.
ASSOCIATION: Fizlcheskiy Institut Im. P. ff. lo!~badeva Akade=ii nauk SSSR
(1~hysics institute, All SSSR)
stzyaTrm-. uFeb63 D= ACQ: 12.Tua63 M.'CL: 00
SM CME: PH NO M7 SOV: OOT 003
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BASOVP N*G*;_EOKHIAA_W*-
Conversion of intensive monochromatic tadiation into electric current.
Fis. tvar. tela, 5 no.8t2384-2386 Ag 163. (MIRA 16%9)
1. Fizicheskiy institut im. PAL-ebedeva AN SSSR, Moskva,
(Radiation) (Electric currents)

0. -1~.
"Plasma hbuting by laser radiation."
report presented at the Intl Symp on Laser P%ysico & ApplIf-atlons, Berne,
12-14 oct 64.
Inst Physics Im P.N. Lebedev, AS USSR, Moscow.

Fmi)- -
--- -T-7=, , - 17, 71. - -
"Plasma ti~-,atlngr by laser radiatIrin."
report presented at the Intl Symp on Laser Phy3ics and Applif--atiorls, Berr, 12-14
Oct 64.
P N Lebedev Physical Inot, AS USSR, Wscow.

ACCESSION NRt AP4036406 S/0030164/000/004/0158tQ160:
AUTIVORS Krokilin,-ps KS.,.-
TITLES Investigations in quantum radiophystes (scientific session)
SOURCES AN SSSRs Vestniko no. 4. 19640 158-160
TOPIC TAGS: laser, laser conference, laser research, semiconductor
laser, gas laser, ruby lasero Raman 1~ser-
ABSTRACT: A scientific session on quantum radiophysics was held
11-12 December 1963 und r the auspices of the Department of General
and Applied Physics at 1he Institute of Physics ime P. N. Lebadev,
(.The reportadealt mainly with the state of research in quintun radio-'
physics, with particular attention given to lasers and their appli-
cations A. He Prokhovov presented an introductory repc~rt on general'
principles and problems of quantum radiophysica in the microwave,
optical, and other ranges@ He pointed out that in the microwave
range the empl:y ant of Imaser generators and amplifiers has been very-
successful* B c use ofithei; frequency stability, masers can be
Card 1/4

ACCESSION NRt AP4036408
utilixed as frequency standards. In the optical range lasers make',
it possibleto obtain a luminous energy in excess of several hundreds
of joules in a comparatively long Eulsj.SlO-3 see) or a highpover up
to 100-109 w In a short pulse (10 8- 13 sac), so that by focusing
the radiation the electric fields may have an Intensity of up to 10
v/cm. IonixatLon of atoms, dissociation of molecules, and destruction
of crystal lattices are possible in such fields. Some of those phe-
nomena ward observed experimentally. Tu. M. Popov presented a report
on semiconductor lasers based on a p-n transition operating in both
pulsed and continuous modes with high efficiency (higher than 60X)
-but with 10
a stability of radiation frequency of only -4 - 10-5.in
absolute units. A number of currently available semiconductor.
lasers are based on gallium and indium arsenidep.indium phosphide,
and the gallium arsenide-phosphide solid solution. Ao No Orayevskiy'
presented a report on gas lasers* These g aner:tors,golsess. great
monochromaticity and frequency stability (Up t 10 n absolute
units) and small beam divergences to to Soballman discussed lasers
based an Raman scattering, used for observkng the forced Raman affect
and for the generation of coherent radiation* The Rauan laser based
Card 2/4

ACCESSION NRi AP4036408
on Stokes lines does not require population inversion to achieve neg-
ative absorption. A similar situation occurs in the case of indirect
transitions in semiconductors. The forced Raman effect is considered
very suitable as the basis of wideband laser amplifiers pumped by
sources of broad spectral composition. A..M. Bonch-Bru'yevich, A. L.1
Mikaelyan, and N. D. Devyatkov presented a series of reports dealingi
with concrete types of lasers. B. K. Vaynshteyn reported on laser
crystals. The reports of M. P. Vanyukov and A. M. Leontovich dealt
with various modes of oscillations arising in lasers. Nonlinear
effects. the generation of secondary and higher harmonics, super-
position of radiation frequencies, phase modulation, and parametric
generation ware considered. Yu. L. Kokurin discussed the ranging of
the Moon with the aid of a ruby laser mounted in the focus of a tele-
scope at the Crimean Astrophysical Observatory. G. A. Askarlyan
reviewed a number of works dealing with the investigation of plasma
and the interaction between monochromatic luminous radi;lt on and uol-~
ecules. L. N. Kurbatov discussed the application of stab)e lasers
for measuring low velocities with the aid of the Doppler effect*
(Cord 3/4

ACCESSION NRs AP4036408
ASS OCIATI ON itione .. ....
SUBMITTEW 00 DATE ACQt- 20Nay64 ENCLt 00
SUB CODXs PH 90 REY BOVS 000 OTHERt 000
Cord 4/4

MOM
SSION NRs AP4042011 1;/0057/64/034/007/1324/1327
ACCF
AUTHORi Krokhin, 0. N.
TITLE: Self-con'sistent mode of plasma heating by laser emis'sion
SOURCEt Zhurnal tekhnicheakoy fitiki, v. 34, not 7, 19649 132q- .1327
TOPIC TAGS: plasma h.aAtLnR, laser plasmit heating, laser, controlled
thermonuclear reaction, controlled fusion reaction
ABSTRAM Basov and Krokhin (Zhurnal ektiparimentallnoy i teoreti-
cheskoy fi Ziki 4- v. 46, 1964, 171) have previously analyzed conditions~
under which 10 watt lasqr emission can [test high-density plasma to
a temperature of 106 -101 K. -Energy transfer was assumed to be
accompltsfied by a short powerful.pulse focused on the plasma surface*
The pre-sent paper treats a different cast wherein the h::t~4,vo~que,
has initially a near-zero plasma density which then ris us to
~evaporation of material from.the containing valls. In this manner,
laser emission is effectively converted into heat during the entire
;process. The feasibility of this concept is shown by proving that,
!under certain conditions, the product of the absorption coefficient
i I
ta~d

ACCESSION NRt AP4042011
and the linear dimensions of the system,.is constant,and,close to unity
during all stages of heating. These condit'ions can be realized by
focusing the laser emission into a narrow and sufficiently long conical-
cavity so that material is vaporized fron the inner conical surface.
The author proves the theoretical princdple by considering a one-
dimensional problem of 'heating plasma confined betwqen two parallel
planes. The far'plane 'represents the vaporized surface. The analysis
concludes that 4/7 of the total laser emission energy is spent to heat
plasma and 3/7 to vaporize and create plasma. The process is limited!
by emission power; the pulse length must be less than the plasma
dispersion time but more than the density equalization time. Thus,
if t 10-8 Gec, Q < 106 w 'for a8yatem length of 10-2 cm, and
<
'010 w for a system length of 10- 1 cm. The laser pulse heating
1
of plasma can be used to-make a pulsed source of neutrons generated
in thermonuclear reactions. Orig. art. has: 15 formulas.
ASSOCIATIONt Fizicheakiy institut imeni Lebadeva AN SSSR
(Physics Institute, AN SSSR)
iCarl
-1 .13

ACCESSION NR: ANA12541 S/0056/64/046/001/0171/0175
.AUTHORS: Basov, ~'. G.; Krokhin, 0. M.
TITLE: Conditions for heating a plasma by radiation from a laser
SOURCE: Zhurnal eksper. i teoret. fiz., v. 46,-no. 1, 1964, 171-175
TOPIC TAGS: plasma, plasma heating, pulsed heating, pulsed plasma
heating, laser plasma heating, optical radiation absorption. optical
radiation absorption coefficient, plasma thermal conductivity, elec-
tronic thermal conductivity, gas dynamic plasma expansion
ABSTRACT: The feasibility is examined of using a laser to head a
dlyterium plasma with ion 7density of the order of 3 x 10 21 cm- at
a:remporature close to 10 deg. The optical radiation absorption
copfficient is calculated to be approximately 10 2 cm-1, showing that
effective absorption occurs up to high plasma temperatures. It is
shown that at the plasma temperature the energy loss in the plasma
is due essentially to electronic thermal conductivity and amounts
to 1.3 x 1017 erg/sec.. Allowance for the gas dynamic expansion of
the plasma also catla for additional laser power. It is concluded
Card 1/2

ACCESSION NR: AP4012541
that a laser power of 109 W with flash duration of. 10-8 see is capable
-of heating a hydrogen plasma to somewhat below 107dog, although the
practical realization depends essentially on the progress in laser
development. "The authors are deeply grateful to L. A. Artsimovich
and V. I. Kogan for a discussion of the results of the work." Orig.
art. has: 11 formulas.
ASSOCIATION: Fizicheskiy institut im. P. N. Lebedeva AN SSSR
(Physics Institute, AN SSSR)
SUBMITTED: 28Nov62 DATE ACO: 26Feb64 ENCL: 00
SUB CODE: PH NO REF SOVI 005. OTHER: 006
Card 2/2

'X C,- U IM 5 6/01/046/004/130/3310
M-101 AP4031193 /005
AUZ, I W. Bascrvl H* G.;
TITLE: O.-L-Atical excitation ct sem1conductors
GOMM: Zho o1wporo i toors fize, v. 46, no. 4, 1964, 1508-1510
TOPIC TAGS: 1wor, semiacnauctor lanor, monochrmatic radiation., coherent
radiatich, recombination radiation, optical V=ping, optical excitation,
resonant cavity
ABSMWT: Excitation of smiewductors. by monochrcmatio radiation with a fr6-
qlu--ncy slightly higher than that of the edge of the intrinsic absorption bMA
is' investigated thooretically, A battery of indepmulent p-n Junction lasers
is suaaeGtcd as the excitation source o0 incoherent mcnochrcmatic radiaticne
It is pointed out.that when the intensity of incident radiation is high, the sum
+ F9 oC Fermi quasi-levels for electrons an& holes approaches the energy of
incident photma-Zol. For awe frequency band such that 1104N + j4ppopulatica
inversion is achieved and oscillation may become Vossible. An exprasaica for
Card 1/2
T-

ACCESSIal M: AP40313.93
the minimw~ Intensity of IncI.&mt raaiatioa J~jn necessary to reach the
threGhold for + pp cormpWftna to the osol.1lation threshold is dienwds
It is ahoma th4t vhan osaIllatim mat pa + ; romdu amistant tar a via*
raa~;a of J > Jmino At a very hU~h intensity :A-sAiatica (Jwkin), vhen cou-
siderable h6ating of electroa-hole gas takes placm, the system bee highly
efficient convexter of Incoherent into coherent ndiation, Vith efficiency
ASSOOzMal: FiZICh"WiT SUSUtUt IM. P. N. rAbod"s Akademil nauk SSSR
(Phpics Institute, laadw6p of Sciane"ASSR)
3-7*64 WM ACQt apWA EWL: 00
SUL CME: M NO MW SOV: 005 r nm 1 002

ZUYFV, V.S.; KROKIIIIIP 0141.
Two conferences on lasers and their uses held in London and
in Geneva. Vest. AN SSSR 35 no.4t8O AP 165.
(14MA 18:6)

KARLOV, ll.v.; KROmirl, 0.11.
The physlen Ilobel Prize for 1964. Unp. fiz. nauk 85 no.2:387-389
F 165. (I-aRA 18:3)

A"'C H .501 33 3 0 OR C-',' CO-J11".
ATOM: KrokhIn. Os lie 1111
ORG: nono
'f IINZ: Quantum elootronIca research
SOURCE': All 533H. Vostnik. no. 6, 1965, ioi-m
TOPTC '1763: quantun oloctroalco, olectronic conlfe-once,. lasai,' serdeonductor War,
la,~ur op"Acs
ABSTRACT- A session of the Department of General and Applied Phy3ics of the
PlqsiS~. J~s ~vVlAc~du my � iences USS14 field
fin. P. N. LehedL c I
in thQ Soviet Union on 17-1,8 Marth 1065 devoted to quantum elec-
troriks and inicrowave propagation. The lectur!-,s on quantum electronics
Wero concerned exclusively with results of research conducted in the
kborato7- of N. G. Basoy, Corresponding Member of the Academy of
S(,Iences.
The lecture by 0. N. Krokhin dealt with h-igh-intensity lacers and
tions in physics. The very high field intensities (107- 10 v/cn-~
their applica
and high concentration of energy in thelight viave which can be achieved It
Cardlh

e '1 -7
ACC MR: AP501-5833
4uch lasers make It possible to investigat-.- nonlinear effects and
the eff('et"; of thcrinal interaction with variou.9 materials. 1-CrokhIn described
111~!4 ri~si~arcfk With an ?,'-j laser (1,0-'3 sec pulse d,ivation) in heating var-
iau-s ,;ub.,;taiic(.,s at a focal point of the optical 5ysteni, The energy density
ill liuch experiments was greater t1jan 3 x 1012,A/cin;' and the temper.-i-
Lures attained Nvere 100,000-200,000K.
cocribed the state of tho art of clectron-beam-
Q.-K.-JAmda kevic
pump(!d semiconductor lasors, pointing out that fabrication of such lasers
hiAped to e%pand the wavelength range for laser action (the range no%v
cxtcrlds from 0.5 to 5.5p The efficiency of st-ch lasers is -toout 776
and thAr output Is several Ifflowattn per pultie. 1"'lectron-beam-pwnped
lascrs bave i-nuch greater power output potential and their coherence can
be inade to approach that of lasers fabricated from various crystals
A. Z. G rr scussed optically excited semiconductor lasers
d1i.,
from 01v standpoint of high-effic-lency conversion of nozicoherent radiation
into cnherent radiation. Present optically purnpod semiconductor laserB
1),IVL' ;-~zji efficiency of about 40i'o and a power output of up to 10 ldlo'watts.
Thi2 thicluiv-ss of the active area responsible for laser -action hafs been
increasc!d to 1 nim. Grasyulc alno discussed sonle results oil the nonlinear
a~)sorption of 11glit in Beiniconductors.
card
.--

5.2,70 %
iACC NR. AP501553
A .'11. OrayovsLly presented a theoretical analysis of' matiwde oscillations (taking
phaso relationships into account) ayd obtainod thooretically an unattenuated rogim
vIth a tbi3-riodulatod anq)lltudo similar to tho spike a obsorved in laser endanione
G 11. StrAkhovnkly doscribod a mothod in which a hy~.rogop boam laser is usod for
tlie -relaxation ratos of activo woleculon. -ff*sBt V. 1,
JOY no 0 12J
SUB CODEs EC, OP / SUBM DAM none

jL-119=0 EWA(k) /FBD/L"WT(1)/kW(k) -2/T/EWP(k) /EVIA (m) -2/9WA(h) SCTB/IJP(C)
L 2
,ACCESSION NR: AP5022695 Wd/AT UPIO181165100TIO091261212619
AUTHOR: Krokhin, 0. N. 614
TITLE: The amplification coefficient and the saturation effect in homogeneously
,excited semiconductors
SOURCE: Fizike, tverdogo tela, v. 7, no. 9, 1965, 2612-2619
TOPIC TAGS: laser, semiconductor laner, stimulated emisslon, population inversion$
amplification, absorption coefficient PI'M
ABSTRACT: An attempt is made to determine the most important effects determining
the properties of the emission line and, therefere, the coefficient of absorption,
.and to establish approximate relationships for simplifying the further analysis of
the operating regime of homogeneously excited semiconductor lasers. Homogeneous
excitation applies to lasers with active regions the thickness of which exceeds con-,
,siderably the wavelength of the emitted radiaticn, i.e., to electron-beam-p=ped
,lasers and lasers excited with phabohd with an energy exceeding the width of the for"-
,bidden gap, In the case of direct transitions, a formula Is derived for the amplifi
cation coefficient which to then used to obtain the oscillation criteria for such
,lasers, ioe&# for the threshold value of the sun of the quasi-Fermi levels of Glee-
Card 1/2

L 233o-66
Acassiou NR: AP5022695 3
.trona and holes. Rate equations are used in an analysis of the saturation effect.
The clectrodynamic an&lyois of systems considered In thin paper differs consider
from that for a two-level laser, due to the uniqueness of the relaxation proceos:'s
In semiconductors with wide energy bands and broad emission lines of the order of
M Orig. art. has: 26 formulas. (Cal
ASSOCIATIONi Fizichenkiy institut Im. P. N. LebedevdX60e OV'(Phygics Institute)
iSUBMITTED! 20Feb65
NO REF SOVt o06
ENCL! 00
OTHER: 005
SUB CODE-UPS
ATD kESS: ille
r6
C&d--21

L 18721-66 FPD/DIT(1)/F,--,r.(k)-2/T/DIP(k)/EiA(h) TJF(c)
ACC HR: AP6006839 SOURCE CODE: UR/0181/66/008/002/0511/0514
AUTHOR: Xrokhin, 0. N.; Uspenskly, A. V.
ORG: Physics Institute im. P. N. Lebedev AN SSSR. Moscow (Fizicheskiy institut AN
SSSR)
TITLE: Asymmetry in the excitation of oscillation modes in semiconductor lasers
SOURCE: Fizika tvardogo tela, v. 8, no. 2, 1966, 511-514 dj
If fir
TOPIC TAGS: laser theory, semiconductor laser, laser P
ABSTRACT: The authors study the excitation of axial modes in semlcon+!~ .or lasers.
It is assumed that both the amplification factor and its spectral form are functions
of the degrge of inversion In the semiconductor. The case of direct interband tran-
sitions in a uniformly excited semiconductor la!;er is studied. The analysis is
based on rate equations for the chemical potentials of the carriers and the number
of photons. It is shown that the relationship between the amplification factor and
the degree of inversion (the shift in the maxim-im and the change in form) results
in asymmetric excitation of axial modes. This 3xcitation Is weakly asymmetric when
Card 1/2

L 18721-66
ACC HR: AP6006839
emission begins far frrm the edge of the band, while excitation is totally asymmet-
ric when the first mode Is excited so close to -the edge of the band that the fre-
quency of the next longer mode Is located beneath the edge and excitation cannot
occur. 'in conclusicn the author-a thank H. G. Basov and P. G. Yeliseyev for dis-
,cussing the results and for valuable coTmwnts!' Orig. art. has: 8 formulas. (141
SUB COM 20/ SUBM DATE# 15Jun65/ ORIG REF: 001/ OTH REr: 002/ ATD PRESS:
Card 212,.7.,W

L 2 F Ekp/D T (I
ACC NRI
A116010975 SOURCE C01'IL; UR/0056/66/050/003/0551/0559
~1~,(!Zj -N. G., Graqyuk, A.Z.; V. A., ~Crokhln, 0. N
()KC: Physics Ins titute Im. P. N. Lebedev, Acad-(!;rj S g
~Pt c: E;
:in-rit 111emd IMuk SSSR) -11 e S SR (Fizicheskiy
TITI
X; Two-photon optically excited semicondlic- )r laser
SOURCF: Zhurnal eksperimentallnoy I teoretiche.i1coy fiziki, v. 50, no. 3, 1966, 551-5551,
,TOPIC TAGS: laser, semiconductor laser, nonlinear optics, two photon absorption,
,optical excitation
ABSTRACT' The present paper-Is n expanded version of an earlier article on a two-photon
optically excited GaAs laser (Zhurnal eksperimental'noy i teoreticheskay fiziki,
pis'na v redaktsiyu, v. 1, no. 4, 1965, p. 29; (see ATD PRESS, v. 4, no. 15, 1965,
P. 9)). It is pointed out that in calculating the coefficients of two-photon absorp-
tion In CdC, R. Braunstein and N. Ockman (Physical Review, v. 134, no. 2A, 1964,
p. 499) neglected the interband states in the valence band and the interference turn
in the n,-Atrix eleux!nts, and thus arrived at incorrect results. Since a formula derive4-
l
by L. V. Keldysh (Zhurnal eksperimental'noy I Leoreticheskoy fiziki, v. 47, 1964 11
I I
p. 1945) for the probability of multiphoton ah.,;orption gives a lower value than the
experimentally obtained data for two-photon absorption, formulas are derived for the
~probnbjlity and the coefficient of two-photon fibs:)rptlon in GaAs, using the perturba-
Card

L 22769-66
- AP6010975 rJ
tion theory and taking into account the band structure parameters of Gam. In addition
expression3 are also obtained for the dependence of the excitation intensity on the
penetration depth of the exciting radiation into the semiconductor and the :externnl
coherent quantum yield and its dependence on the internal losses in the laser and on
the length of the cavity. The calculated data are found to be in good agr'eeu*nt with
the experimental results. Orig. nrt. has: 18 formulas and 7 figures. (CS)
SUB CODE: 20/ SUBH DATE: 060ct65/ ORIG REFt 007/ OTH REF: 004/ ATD PRESS., 5('2%7

ACC NR, AP6036o47 CODE-:__ UR/005 6166105110ohlog8gli -
000
AUTHOR: Basov, V. A.; DementlyeYl Ve A,, Krokhin, 0, 14,; Sklizkov, 0. V#
ORG: _?hyqiqL;n9titute im, P, N. Lebedev ..Acad my of Scie a 6~, R- (Fizicheakiy~
institut Akadcmii nauk 858~_)
TITLE., Heating and decay of a plasma produced by a Siant laa2j_pulse cused on a
solid tarGct I
SOURCE: Zhurnal okoperimentallnoy i toorotichookoy fiziki, v.*51, no. 4, 1966, 989-
1000
TOPIC TAGS: plasma decay, plasma diagnosticd,laser application
ABSTRACT: 'The authors obtain the distribution of thelu-6vX"W go dyruwdrs immiters cf
the plasma produced by a giTt laser pulse focu~,ed on a solid target ruwbrxv9tzfaxJudng
its-carly decay stages . The"plasma was investiqated with apparatus having a high time
resolution permitting 'the radii of v-&-r1ous regions of the flare to be determined as
functions of the times The experiments consisted of recording the charged-particle
flow to a shielded probe (Fig. 1) j the giant pulse being produced by a neodymium-glaus
laser described elsewhere (ZhETF Pis1ma, v. 2, 5T, 1965). The motion of the luminous
plasma boundary was investigated by high-speed photography with SFR-2M equipment at a
time resolution of 1*5 neece The motion of the internal region of the flare was fol-
Card 1/2

ACC_NRz__AP603_6o4T
Fig. 1. Experimental setup for the de-
termination of the R-t diagrams of the
neutral boundary of the flares 1 - Iona,
2 - semitransparent mirror, 3 - lenso
- discharge gap, 5 capacitors 6. 7
mirrors, 8 - probe, 9 - target. -
to V
L JMF7 Hip
!0 0I.C1110,30OPS
loved by a sbadov method with light from a laser pulse. 7he absorption in the flare
was determined indirectly by measuring the transmission coefficient, and the density
and temperature distributions in the flare were estimated from the measurement results
as function of the laser power. A theoretical interpretation is proposed ror the ev-
olution of the heat rise and motion of the flare, based on the simplifying assumption
that the problem has spherical symmetry and that the velocity varies linearly with the
radius. The proposed theory is found to be in qualitative agreement with the exper-
imental data. The authors thank Ve 89 Zuyev for collaborating in the experiments,
Orig. art. bast 10 figures and 15 formulas,
SUB CODE: 20/ SUBH DAM 2lMar66/ ORIG REFi. 010/ OTH IMFi OOT/ ATD PRESS: 5106
Cafd 2/2

ACC NRt --- AP7001995 SO.URCE COD.1: uW664.6/66/036/00611022/1:026__'~
AUTHOR: Afanaslyev, Yu. V. (Moscow); Kral', V. H. (Moscow); Krokhin, 0. N. (Moncow);
Neuchinov, I. V. (Moscow)
ORG: Institute of Physics of the Earth,AN SSSR (Institut fiziki Zemli AN SSSR);
Physics Institute, AN SSSR (Fizicheskiy institut AN SSSR)
TITLE: Gas dynamic processes during the heating of matter by means of a laser beam
SOURCE: Prikladnaya matematika i makhanika,v. 30, no. 6, 1966, 1022-1028
TOPIC TACS: laser radiation, radiative heating, thermodynamic process
ABSTRACT:
An investigation was made of the heating process and the gas dynamic
motion of matter subjected to the effects of a powerful laser beam. An
examination was made of the case when a bounded transparent mass of gas
was heated. The problem of the heating of an initially cold and motion-
less gas, filling a space bounded by a vacuum, was also solved. The gas
dynamic approach for a'olving these problems was selected because at suf-
ficiently powerful fluxes of laser radiation the rise in temperature is
accompanied by the formation of gas dynamic,motion of matter (evaporation),
which itself exerts a substanti eff ct W~the whole process of heating.
One of.the features of the proce:81 which CL licates solution of the prob-
Card 1/2

AP70019
lem is ft dependence of the absorptive power 'on the state of matter during
its gas dynamic motion. on the basis of a system of equations for motion,
continuity, energy, and radiation transfer, expressed in Lagrange coordi-
nates, a system of differential equations was derived. The existence of
self-similar motion was shown. The results of the self-similar solution
and of the numerical calculations were obtained and compared. A study was
mada of the possibility-of employing the results obtained to describe the
heating and evaporation of matter from the surface of a solid body under
the effect of a Q-switched laser beam. The authors thank N. G. Basov,
S. P. Kurdyumov, and A. A. MLlyutin for discussing the problem and for
their advice, and.V."V. Ndvikova for her help in the numerical'calculAtionse
Orig. art. has.: 14 fo rmu.las and 5 figures.-
suB CODE: 20/ SUBM DATE: 24Mar66/ ORIG REF: 0014/ OTH REIN. 001/ ATD PRESS: 5111
Card 2/2.

KII
,CYIITII
j A ) S.t nekhanik-nautavnik
A divlng station on a ship bottom c1naning crarjo. Rech.trannp. 23
no.11148-49 N 164. k
'MIRA 18:3)
1. Volzh3koyc baoncynovoye upravlenlya ruti.

2. USISR (600)
4. Concrete Consturction - TSImlyansk Hydro-Eleattto Power Otation
7. Repair of equipment in automatic concrete plants at the construction site of the
TSimliansk hydroelectric power development. Yiekh.stroi., 9, no. 12, 1952.
9. Monthly List of Russian Accessions, Library of Corigress, April 1953, Uncl.

ALEKSEYEV, G.P.; ANDONIYEV, V.S.; ARNGCLID, A.V.; BASKIN, S.M.;
BASHMAKOV, N.A.j BEREZIN, V.D.; BERMAN, V.A.1 HYAHOV, T.F.;
GORBACHEVp V.N.; GRECHKO, I.A.; GRINBUXH, G.S.; GROMOV, M.F.;
GUSEV, A.I.; DEMEXa"YEV, N.S.; DMITRIYEV, V.P.; DULIKIN, V.Ya.;
ZVANSKIY, M.I.; ZENKEVICH, D.X.; IVANOV, B.V.; INYAKIN, A.Ya.;
ISAYENKO, P.I.; KIPRIYANOV, I.A.; XITASHOV, I.S.; KOZHEVNIKOV,
N.N.; ROF04YAGIN, B.V.; &J~QkHIN, S.A,j KUDOYARDVp L.I.;
KUDRYAVTSEV, G.N.; LARIN, S.G.; lZBEDEV , V.P.; LEVCHENKOV,
P.N.; LEMZIXOVv A.K.; LIPGART, B.K.; LOPAREV, A.T.; HALYGINp
G.F.; MILOVIDOVAj S.A.; MIRONOV, P.I.1 MIKHAYLOV, B.V., kand.
tekhn. nauk; MUSTAFIN, Kh.Sh., kand. tekha. nauk; NAZIMDV,, A.D.;
NEFEDOV, D.Ye.; NIKIFORDVv I.V.; NIKULIN, I.A.; OKOROCHKOV9 V.P.;
PAVLENKO, I.M.; PODRDBINNIK, G.M.; POLYAXO2, G.Ya.; PUTILINg V.S.;
RUDNIK, A.G.; RUHYANTSEV, Yu.S.; SAZONOV, N.N.; SAZONOV, N.F.;
SAULIDI, I.P.; SDOBNIXOVp D.V.; SEMENOV, N.A.; SKRIPCHINSKIY, I.I.;
SOKOLOV, N.F.; STEPANOV, P.P.; TARAXANOV, V.S.; TREGUBOV, A.I.;
TRIGER, N.L.; TRDITSKIY, A.D.; FOKIN, F.F.; TSAREV, B.F.; MSULIN,
N.A.; CHUBOV, V.Ye., kand. tekhn. nauk; ENGEL', F.F.j YUROVSKIY,
Ya.G.; YAKUBOVSKIY, B.Ya., prof.; YASTREBOV, M.P.; XAMZIN., I.V..,prof.j,
glav. red.; MALYSHEV, N.A., zam. glav. red.; MELINIKOV, A.M.p Sam.
glav. red.1 RAZIN, N.V.,, zam. glav. red. i red. tomal VARPAKHOVICH,
A.F., red.; PETROV, G.D., red.; SARKISOV, M.A., prof., red.;
SARUKHANOVP G.L., red.; SEVASTIYANOV, V.I., red.; SHIRNOV, X.I.,,
red.; GOTMAN, T.P., red.1 BULIDYATEV, N.A., tekhn. red.
(Continued on next card)

ALEKSEYEV, G.P.-(continued). Card 2.
(Volga Hydroelectric Power Station; a technical report on the
design and construction of the Volga Hydroelectric Power Sta-
tion (Lenin), 1950-1958] Volshakaia gidroelektrostant5iia;
tekhnicheskii otchet o proektirovanii i stroitel'stve Volzhskoi
GES imeni V.I.Lenina, 1950-1958 gg. V dvukh tomakh. Moskva,
Gosenergoizdat. Vol,2.[Organization and execution of constrution
and assembly work] Organizataiia i proizvodstvo stroitellno-
montazhnykh rabot. Red. tome: N.V.Razin, A.V.Arn olld, N,L.
Triger. 1962. 591 p. fKIRA 16:2)
1. DeystvitelInyy chlen Akademii stroitellstva i arkhitektury
SSSR (for Razin).
(Volga Hydroelectric Power Station (Lenin)--Design and
construction)