SCIENTIFIC ABSTRACT LANGE, O. K. - LANGE, V. N.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000928520011-3
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: June 20, 2000
• Sequence Number: 11
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

LOGE, 0. K.
ow
Landslidos. Uch.3ap.Mook.un. no.176:123-133 156. (MlU 9: 12)
(Landalides)

IVABOY, -Aleksandr Timofeyevich4_LAIQFAOQJ6*p*doktor geol.-min.nauk, otv.red.;
SUNTSOV, N.A.. kand.geol.-min.nauk, otv.red.; RODIONOY.F.T., red.
ixd-va; GUSHVI, I.N., tokhn.red.
(Underground vaters in the Mongolian People's Republic] Pod-
zemnye vody Mongollskoi Respubliki. Moekva, Izd-vo Akad.nauk
SM. 1958. 133 P. (Akademiia nauk SSSR. Laboratoriia gidro-
goologicheakikh problem. Trudy, vol. 19) (MIRA 11:10)
(Mongolia--Water, Underground)

GARMONOV, Ivan Vladimirovich; LANGE, O.K., prof., doktor geol.-mineral.
nauk, otv.red.; 14ARKAVEYEV, A.A., red.izd-va;KMIMIN, I.F., tekhn.
red.
[Giour,d waters of steppe and forest-steppe regions in the European
part'.of- the U.S.S.R. and their hydrochemical zonality] Gruntovye
vody stepnykh I lesostepnykh raionov Evropeiskoi chasti SSSR i ikh
gidrokhimicl~eskaia_ zonallnost'. Moskva, Izd-vo Akad. Dauk SSSR,
1956- 230 P. (Akademiia nauk SSSR. Iaboratoriia gidrogeologichookikh
problem. Trudy, vol. 17) (MIRA 12;3)
(Water, Underground)

3~5) PHASE 1 BOOK EXPLOITATION SOV/2180
Lange, Oktariy Konstantinvich
Obshchaya geologiya (General Geology) Moscow, Gongeoltekhizdat, 1950"
. 250 p. Errata slip inserted. 10,000 copies printed.
Ed.: M.M. Zhukov; Ed. of PublAshing House: N.E. Krasnova; Tech.
Ed..- K,V. Krynochkina,
PURPOSE: This textbook on geology is intended for students at
geologic-exploration teklinikums.
COVERAGE: This is a general -;extbook on physical geology. The author
discusses the processes wh:Lch take place In the interior of the
earth as well as thcsa in ~:h- crust. The work. of wind, s-urface and
underground waters, and wialn I,-s geologic agents is explained. The
author notes the import-ance of seismic, gravivietrii, and magneto-
metric techniques to gr--ologic research, No persona..i.-.-.zles are
mentioned. No refero_~-_,).cas are given.
Card 1/4

General Geology
TABLE OF CONTENTS:
Introduction
Origin of the Earth 5 Its Physi~:al and Ghemical Properties
The Earth in cosmic Space
Shape, physical prapert1E:s, and composition of the Earth
Outer Geospheres of the Eayiii
Atmosphere
Hydrosphere
Biosphere
Lithosphere
General information on minerals
General information on roik=.
Description of Exogenous Proneases
Weathering of rocks
Geologic activity of win:~
Geologic activity of ruiming surface waters
Geologic activity of underground waters
SOVI-2180
7
7
12-
21
21
30
39
43
4-4
70
93
93
105
115
133
Card 2/4

General Geology sov/2180
Geologic activity of snow and ice 152
Geologic activity of sea 164
Geologic activity of lakes and bogs 174
Geologic activity of man 148
Diagenetic processes 1 0
Description of Endogenous Processes 186
Magmatism 186
Intrusive magmatism 187
Effusive magmatism -or vulcanism 188
Movements of the Earth's crust 200
Earthquakes 210
Oscillatory movements 211
Folding and rupturst movements 213
Metamorphic Processes 226
Card 3/4

4 General Geology
Brief information on the Earth's
Hypotheses on the Development of
Compiling Geologic Maps and P-o--.1es
Organization of the Geolog~-cal 'Service
SOV/2180
Age 229
bhe Earth's Crust 238
243
in the USSR 250
AVAILABLE: Library of Congress (QE26.L267)
MM/ad
8-13-59
Card 4/4

IANGA, O.K., prof.;
. ..................................... . . .-1
[Principles
Izd-vo Hook.
w
I -
I
S-ANOVA, K.A., red.: bM~V, M.S., tekhn. red.
of bydrogeology] 0snovy gidrogeologii. Izd.2. [Mosk7a]
univ., 1958. 254 p.' (MIRA 11:8)
(Water, Underground)

AUTHORS: Kovaleva, I.V.9 Lange 0 K SOV-5-58-2-11/43
TITLE: Aleksandr Nikolayevich Semikhatov
PERIODICAL: Byulleten' Moskovskogo obshchestva ispytateley prirodZr -
Otdal geologicheskiy, 1958, Nr 2, DP 120-124 (USSR)
ABSTRACT: This is an obituary on Professor A.N, Semikhatov, Dir,?ctor of
the chair of hydro-geology of the Moscow Institute of Hydraulic
Engineering imeni V.R. Vil'yams, honored scientist and engineer
of RSFSR, Doctor of Geological-Mineralogical Sciences,
There is 1 photograph and 40 Soviet references,
1. Scientific perso=el.-.USSR
Card 1/1

LAITGP-. O-K- __-,
Regional features of ground water formation. Trudy Lab.gidrogeo:L,
probl. 16:187-193 158- (MMA 1"!:2)
1. Moskovskly gosuclarstvennyy un!.versitet.
(Water, Underground)

ROGOIVSKAYA, N.V.; MOROZOV, A.T., nauefin-yy red.,-,-LANfg, Mop retsenzent;
131BDEOXO Ii.11of retsenzent; DUNI14--ZARKOVSKIlt L,V.r-retBenzent;
FILMOVAI B.S.v red. izd-va; BYKOVA, V.V.? .tekbn. red.
[The teabnique, of establishing bydrogeological. regions for land
reolamation purpon~s; hydrogeologicall land reclamation regions]
Metodika'gidro,o,,,ed'logicheakogo raionirovanlia dlia. obounovaniia
meliorataii; gAdrogeologo-meliorativnoe raionlrovanie. Moskvaq
Gos. naucbno-tf-4tbn. izd-vo lit-ry po geol. i okhrane nedrf 1959.
174 p. (Mur,?ab Va3ley-Irrigation research) (MIM 14:6)
(Kura.-Aras Valley-Irrigation research)

LANGE, Oktaviy Xonstantinovich; GORDNYKV, D.I., red.; PETROVA, K.A.,
--'-ie.d.; YEIMEOV, M.S., tekhn.red.
(Underground wAters of the U.S.S.R.J Fodzomnye vody SSSR. Pod
red.D.I.Gordoeva. Moghrn, Izd-vo Mosk.univ. Pt.l. (underground
watera in the Ruropean part of the U.S.S,R.] Podzermye vody
Evropoiskoi chistl SSSR, 1959. 268 p. (MIRA 12:12)
(Water, Underground)

0
LANGN_,__O.K._.. otv.red.; BMMOWV, G.V., zamestitell red.; SOKCLOV, D.S.,
red.; KAMOSEIT, G.N., red. [deceased]; HAKArMKO, F.A., red.;
OVCHINHIKOV, A.M.. red.: TOLSTIKHIN. N.I., red.; BOGORODITSKIT,
K.F., red.; FILIPPOVA, B.S., red.izd-va; GUROVA, O.A., tekhn.red.
EProblems of hydrogeology] Problemy gidrogeologii. Moskva. Gos.
neuchno-takhn.izd-vo lit-ry po geologii i okhrane nedr, 1960.
366 p. (MIU 13:11)
1. Natsionalin7y komitot geologov Sovetakogo Soyuza. Gidrogeolo-
gichaskaya sektsJ.ya.
(Water, Underground--Congresses)

3OGDANOV, A.; MUSHM111211KOV, G.; LAMB, 0.; SFRGRYEV, Ye.; SMIRNOV, V.
I --- -
In memory of Academician Nikolai Sergeevich ShatgPdi, 1895-1960.
Vest. Moak. un. Ser, 4: Geol. 15 no.6:73-75 11-D 160.
(MlU 14: 1)
(Shatskii, Ilikolai Sergeevich, 1895-1960)

SULEYMANOV.,D.M., otv.red.; KULOSHVILII.S., otv.red.; POBEDONOSTSEV,N.M.,
otv.red.; LANGE,O.K., prof.glav.red.; ABRAMOVICH,MI.V. red. ;AZI ZBEKOV,
Sh.A.,redo'-;-AIZYEV-,A-.G.,red.; ALIZADE,A.A.,red.; ALIZADE,K.I.,red.;
GORIZI,V.A.,red.; KASHKAY,M.A.,red.,- MEKHT1YEV,Sh.F.,red.; SUIrLANCA,
A.D.,red.; DOLGOV,V.s red.izd-va;
[Geology of Azerbaijan; bydrogeology] Geologiia Azerbaidzhana; gidro-
geologiia. Glav.red.O.K.Lanve.Otv.red.D.M.Suleimanov, I.S.Kuloshvili i
N.M.Pabedonostsev. Baku,Izd-vq Akad.nauk Azerb.SSR, 1961. 357 p.
(MFU
,:,14:12)
OL
1. Akademiya nauk Azerbaidzhanskoy SSR, Baku. Institut geo 0g i.
(Azerbaijan-Water, Underground)

,- LOOD - +mylt~~ prof,; IVANOVA, Melentina 7edorovna-,
DANILOCHMO- 0.?., roil.; 7IRMAKOV, M.Te., tok-hn.red.
EGeneral geolo&7; a lecture course] Obahchaia geolog*A;
Imrs lektaii. Pbd red. O.K.Lange. Moskva, Izd-vo -Mo ,6k.WAv.
No.l. 1961. 242 P. (MIRA 14:12)
(Geolog7)

FILATOV, Konstantin Vasillyevich; WHO, O.K., otv. red.
(Features of the chemical coaposition of the underground
waters of the Altai !territory and their relation to the
surface waters] Osobonnosti khimicheskogo sostave pod-
2emn.vkh vod Altsinko,,;o lcraia i ikh sviazo B poverkhnost-
nymi vodami. Moskva, Izd-vo Akad. nouk SSSR, 1961. 48 p.
(MIRA 14:5)
(Altay Territory--Water, Underground)

MAKKAVEYEV, A.A.p doktor geol'-mineral. nauk ;,,-LANGE, O.K., prof., doktor
geol.-mineral. nauk, red.JIMARINOV, V.A.,-doR_oi -geol. -mineral. nwik
red.; OVCHINNIKOVp-A.M., red** SOKCLOV, D.S., red.; TOISTIKM, R.I.,
B1094AN# F.N~.-ikand.geol.-ulraral.naukf red.; BRODSKIYI A.A., kemd.
geol.-mineral.naukp red.; YDMLIYANOVAp le.P.p red.; CHAPOVSKrYp Ye.G.,
dots.9 red.; BEEW, Yu.A., vedushchiy red.; MUKHINA, H.A.p tekbiao red.
[Dictionary of hydrog--eology and-engineering geology] Slovarl po gidro-
geologii. I inzheneriioi geologii. Moskva, Gos.nauchno-tekbn.izd--vo
neft. i gorno-toplivnoi lit-ry, 1961, 186 p. (MIRA :L4;6)
1. Mos"cov. Vsesoyuznyy nauchno-issledovatellskiy institut gidrcgeolo-
gii i in,,,.henernoy geologii. I
(Engineering geology-Dictionaries)

GORDEYEV) Demlyan Ignat'yeVickr;--LW,_GE)_O.Kj prof., otv. red.; TATARIEOVA,
Ye.I.,, :red.; YERMOV) M.S., tekbn. re4.
[M.V.Lorionosovp founder of geology] M.V.Jomonosov osnovopolozhnLk
geologivheskoi nauki. Izd.2., ispr. i dop. Moskva, Izd-vo Mook.
univ.,, 3961. 203 p. (MIRA 14:10)
(Lomonosov, Mikhail Vasillyevich, i7l'1-1761,i)

KLIMTOV, Petr PlatonovichILANGE9,0.K., zasluzhennyy deyatell nauki, prof.,
retsenzent; CHAPOVSKIYI'p *Y6-.G.-" -.nauchnyy red.; SKVORTSOV, V.P., red.
izd-va; IVANOVA, A.G., tekhn. red.
(Methodology of hydrogeological investigations] Metodika gidrogeolo-
gicheskikh issledovanii. Moskva, Gos. riauchno-tekhn. izd--v,c, lit-ry
po geol. i okhrane nedr, 1961. 389 p. - (MIRA 3,4:6)
(Water, Undurgroun&)-;. .. .

LANGE, C.K.
Aleksandr Nirolaevich Mazarovicb, student and vmllne scientist;
obituary. Biul. MOIP. Otd. peol. 36 no.2:4-10 Mr-Ap '61.
(MIRA 14:7)
(Mazarovich, Aleksandr Nikolaevicb, 1886-1950)

VARSANOFIrLVA, V.A.; BOGDAIIIN, A.A.; MISTSOV, Yo.A.,-.U.-NGE O.K.*
MERKLIN, R.L.; MURATOV, 14.V.; FEINYAKOVA, A.I.; PETRUSIMMY,
h.A.; SOKOLOV, D.S.; SHVETSOV', M.S.; YAMIN, A.L.
Nikolai Sergeavich Shatskii. Biul. 140IP. Otd.goold.)6 no.4:
3-6 il-Ag 161. (mn" 14: 9)
(Shatskii, Hikolai Sergeevich, 1895-1960)

LANGE, Oktaviy,,XonsUmtinoviah, prof.; IVANOVAp Melentina Fodorovna;
m-.-'-WftOV) F.I., red.; YE?%MAKOV, H.S., tekhn. red.
[General geolop,; lecture course] Obshchaia geologiia; kurs
lektsii. Moskva, Izd-vo Mosk. univ., No.2. 1962. 162 p.
(MIRA 16:12)
(Geology, Structural)

LANGE, O.K.; HELINIKMIA, K.P.
Dei~lian Ignatlevich Gordeev; on his 60th birthday. Vest. Mosk.
un. Ser. 4: Geol. 18 no.4:75-85 Jl-Ag 163. (MMA 16:10)

LANGE., Okt-q7iy Konstantinovich; GORDEYEV, D.I., red.; KARPOVA,
I.S., red.; I!UKHINA, L.V., teklm. red.
[Underground waters of the U.S.S.R.] Podzemriye vody
SSSR. Moskva, Izd-vo Mosk. univ. Pt.2. (Underground
waters of Siberia and Central Asia] Podzemnye vody Sibiri
i Srednei Azii. 1963. 283 p. (MIRA 17:2)

VIOLYANOV,I.A., akademik, prof., otv.'red.; KEINESARIN, N.A.,
prof., zam. otv. red.; LANGE, O.K., prof., red.;
TMAGANOV, Kh.T R.
S.A., kand. geol.-miner. nauk, red.; GAMOV, V.G.p
kand. geol.-miner. nauk, red.; MIRZAYEV, S.Sh., kand.
geol.-miner. nauk, red.; SULTANKHODZHAYEV, A.N., red.;
KBDDZHIBAYEV, N.N., kand. gool.-miner. naik, rod.;
YMASANOV, A.S., kand. geol.-miner. nauk, red.
fEffect of irrigation on the secondary salinization of
soils, the chemical coriposition, and regime of ground
waters; Tashkent International Hydrogeological Symposium,
August 6-12, 1962] Vliiap-ie orosheniia na vtorichnoe za-
solenie, khimicheskii sostav i rezhim podzemnykh vod;
Tashkentskii mezhdunarodnyi gidrogeologicheskii simpozium
6-12 avgusta 1962 goda. Mosk-va, Nauka, 1964. 297 p.
(IIJRA 18: 1)
1. International Symposium on the Influence of Irrigation
on Secondary Salinization, Chemical Composition, and
Ground Water Regime, Tashkent, 1962. 2. AN Uzbekslr-.oy SSR
(for Mavlyanov). 3. Chlen-korrespondent AN Uzbekskoy SSR
(for Kenesarin).

LANGE O.K.., glav. red.; NURATDINOVA, M.R.) red.; ASTAKHOV,
P red.
(I~ydrogoological and engineering geological conditions of
Uzbekistan] Gidrogeologicheskie i inzhenerno-geologicheskie
usloviia Uzbekistana. Tashkent, Nauka UzSSR. Vol.2.
1964. 319 P. (1,111RA 18:6)
1. Akademiya nauk Uzbekskoy SSR, Tashkent. Institut gidro-
geologii i inzhenernoy geologii.

LANGE, O.K.; PLOTNIIKOV,N.I.
Book reviews and bibliography. Ramd. i okh. ne'-ir. "r" ,S, !'~ ,
" Jr
62-64. N 164. " , '- !~ -,. - . 1. 1~
1. Moskovskiy gosudarstvennyy universituet.

ZONENSHAYN, L.P.; BERTETIIIS-USPENSKAYA, I.A.; SAFRONOV, V.S.; NEY-MAN, V.B.;
GENDLER, V.Ye.; CHURIKOV, V.S.; YFREMIN, N.I.; KOGAN, B.S.; YAKOl.'LF-','-.1
KABANOV, G.K.; KTZNFThCVA, K.I.; SINITSYNA, 7.N.;
SMIRNOVA, T.N.; VENKATACHALOATI, V.; MASLAKOVA, N.I.; BELOUSOVA, Z.D.;
YAKUBOVSKAYA, T.A.; YORTNIA, A.L.; RYBAKOVA, N.O.; MOROZOVA, V,G.;
BARASH, M.S.; FONAIEV, V.I.; NIKONOV, A.A.
Activity of the Geological Sections of thr Moscow Naturalists'
Society. Biul. M1,01P. Otd. geol. 39 no.6:1-~7-1-53- N-D '64.
(MIRA 1-P; 3)

STRAKHOV~ N.M.; LANGE.,-O.K.; YABLOKOV, V.S.; SARYCHEVA, T.C..;
OVCHINNIKOV, A.M.; SHCHEGOLEV, D.I.; KRASHENINNIKOVp O.F.;
I.IENYAYLEIIKO, P.A.; KALEDA, G.A.; ANUFRIYEV, A.A., atudont
Mikhail Sergeevich Shvetsov, 1885- . Izv. vys. ucheb. zav.;
geol. i razv. 8 n0-11:7-13 N 165, (MIRA 18.12)
1. Moskovskiy geologorazvedochnyy institut (for Aniifriyev).

SILLEN, L., LANG- ., GABRIEISON, C.
~99~
"Zbi6r zadaA z chemii fizycznej" (Selected tasks from the.physical chemistry),
by L. Sillen, F. Iange- C. Gabrielson. Reported in New Books (Nowe Yisinki),
No. 114, July 15, 1~55

S lqpw
IANGE, Ryazard
First contribution to the discussion on the Zeran Works.
Motor 11 no.2:3 14 Ja 162.

__ ~GE ~ ~S. M. _ _ _--
M.V.Lomonosov and Soviet public health; on the 250th anniversary
of his birth. Zdrav. Tadzh. 8 no.6:48-49 N-D 161. (I~IIRA 15:1)
1. Iz kafedry organizatsii zdravookhraneniya i istorii meditsiny
(zav. - dotsent Ya.T.Tadzhiyev) Tadzhikskogo moditsinskogo instituts,
imeni Abuali ibni Sino.
(LOMNOSOV, 14IKHAIL VA6ILIEVIGH, 1711-1765)

LANGE, T.
"Research Methods in Cavitaiion (As Applied to --- ) in Liquids With the Aid of
Ultra-sonic Waves", Problemy covremennoy fiziki, No.9, 1953.

LANGE, T. 1.
2798. LANGE, T. I. Izuoheniye Yavleniya SkolIzheniya V Kristallakhs Pomoshchlyu
Iskusstvennogo Sdvigodbrazovaniya. L., 1954. 10s. 19am. (laningrgos. Pad. In-t).
100 ekz. B. Ts.-(54-54576)
SO: Letopis' Zhumallmykh Statey, Vol. 42, Moskva.. 1949

1ANGE, T. 1.
"Study of the Phenmenon of Slippage in Crystals by Means of Artificial
Shear Formation." Cand Phys-Math Sci., Leningrad State U~ Leningrad, 1.954. (XL No
2., Jan 55)
Survey of Scientific and Technical Dissertations Defended at U&SR Higher
Educational Institutions (12)
SO: Sm. No. 556, 24 Jun 55

S/058/63/000/002/W/070
A1601A101
AUTHORS: Lange, V. N.
TITLE: The temperature dependence of the mobility of current carriers in
the tellurium-selenium and telliirium-sulfur systems
PERIODICAL: Referativnyy zhurnal, Fizika, no. 2, 1963, 72, abstract 2E483
("Izv. AN MoldSSR", no. 5,. 1962, 113 - 116)
TEXT: Presented are experimental curves of the dependence of lgRT (R is
the Hall constant, -.,- the specific electric conductivity) on the temperature in
the range of 90 - 3900K for the samples of the Te-Se and Te-S systems with a
various content of admixtures (Se and S respectively). The curves reveal that
an addition of Se (or S) in the amount of 0.05 - 0.1 atomic Ic.,' leads to an in-
crease of the interval in which the mobility of RT slightly depends on the tem-
perature. This fact is connected with an increase in the number of defects in
the lattice. When further increasing the content of Se, complexes of impurity
atoms start to develop. As a result, the concentration of defects decreases.
Hereby, the interval of the weak dependence of RT on the temperature is also
Card 1/2

S/058/63/000/00PVC46/070
The temperature dependence of the ... A160/A101
diminished, since in samples with a small concentration of defects the scattering
on phonons starts to take effect at lower temperatures. When increasing the con-
tent of Se (or S) up to 0.50 atomic %, the scattering on impurity atom complexes
starts to play an essential part, and a quick drop of the RT-product becomes
noticeable at a more higher temperature. It is shovm that a quick decrease of
R~~, observed,:ih~'.Te..- Se and Te.-- S alloys during a transition to adequately high
temperatures, should not be explained by a change in the width of the forbidden
zone.
[Abstracter's nota. Complete translation]
A. Kozyrev
Card 2,/2

'L 19496-63 AFFTCIASD' JD
ACCESSION HR: AP30039131
S/0181/63/005/007/2029/2031
AUMORS: Lange, V. T I.
TITLE: Investigations on'the anisotrop of,mi rohardness'in indium antimonid
y
determined by the scratch test
~'-SOURCE: Fizika tverdogo tela, v. 5, no. 7, 1963; 2029-2031
TOPIC TAGS: microhardness, anisotropy, In, Sb, scratch test, cleavage plane,
crystal face. plastic characteristics
~J
ABSTRACT: The authors have used the scratch test on-the (111) crystal face ana
4 the (110) cleavage plane in n-type InSb crystals in which the concentration of
er of 1017 cm-3. The scratching
active uncompensated impurities was on the ord
was done with a. 5-100 diamond pyramid in a PHT-3 microhardness tester by moving
the object stand along one of the coordinate axes. This was done by smooth
manual rotation of the appropriate knob, with a load of lOg on the pyramid, The
hardness was computed from 20 measurements and was taken as the load (in kg) di-
vided by the.square of the scratch width (measured -in mm) Results are showain
~:.Caid

'L 19496-63
ACCESSION-MR: AP3003913
osures).,~On the basis of these results, it is concluded
Figs. I and 2 (see encl,
that in studying the anisotro2j of plastic characteristics of a crystal the
ma rove to,be
scratch test may be used as well as the indentation test, and it y p
more sensitive. "The authors express their thanks to M. S. Ablova and A. R.
Regel' f6r discussing the results and also to L P. Molodyan for furnishing sinj;l~C'
crystals for the investigation." orig. art. has: 2 figures.
ASSOCIATION: Institut fiziki i matemitiki AN MSSR, Kishinev (Institute of Phys:1,ca!1
and Mathematics, Aeademy.of Sciences, Moldavian S
SUBMITTED: 12Mar63 DATE ACQ: 15Au&63 ENCL: 02
SUB CODE:- PH NO REF SOV: 005 OTHER-. 002
Crj 2/,# 2-

ll~z - * -- --
" , z -
0

VERAKSA, V.I.; LANGE, V.N.; LANGE, T.I.
Effect of small addltion.,3 rX thn el,!mentri oil !,h,3 Vb subgro-up of- 'he
periodic table on some proptrties of tell,irium single crystals. Zbur.
fiz.khi-m. 37 no.10:2308-2310 0 163. (MIRA 17:2)
1. Laboratoriya pola-provodnikov it!j NA'.1 !wskcq SSR,

ACCESSION M ----S/dial'/64/006/004/1220/122-2
AUTTHORS: Lange, V. F.; Lange, T. I.
TITLE: ---_ _:-altion of the anisotropy of the photomachanical effect in indium
:antimonide and in antimony
'SOURCE: Fizika tverdogo tela, v. 6, no- 4, 1964, 1220-1222
'TOPIC TAGS: photomechanical effect, indium antimonide, antimony, microhardness
!tester PMT 3. crystal property
iABSTRACT.- By means of a PMT-3 microhardn6ss tester, the authors have shown that the!
ivalue of microhardness is related to ~he width (d) of the scratch and the pressure
1 -2
i(P) at the point of the instrument by the formula H - Pd . They also established
ithat the photomechanical effect is anisotropic, giving rise to diminution in hard-..
;ness, de5endmig on direction, that ranges from 2 to 6~4 (as compared to the value.lin
idarkness for crystals of InSb and from 4 to 1(Yla for crystals of Sb. It was
'observed-that the positions of-the maximums of microhardness in crystals of Sb
i(large maximums of both H and Hi, i.e., maximums of hardness both in darkness and ii
d
d i
'tin light) correspond to the maximum position for -P whereas in InSb the
Hd
Card

iACCESSION NR: AP4028455
H -H.
jindividual, maximurs correspond to minimums of d 1, "The authors expreas-their
Hd
'sincere thanks to Professor A. R. Regell for discussing the results and to M.,S.
;Ablova for preparing the single crystals of indium antimonide and for her interest
;in the work." Orig. art. has- 2 figures and I table.
!ASSOCIATION: Laboratoriya poluprovoanikov AN Moldav. SSR, Kishinev (Laboratory of
iSemioqA~potors, AN Moldav. SSR)
ISUBMITTEDs. 23AU963 ENCL: 00
iSUB CODE: ECj'SS NO REF SOV: 006 OTHER: 003.
Card. 2/2_

ACCESSION NR: AP4041366
S/0048/64/028/006/1007/1009
AUTHOR: Kotrubenko, B. P.; Lange,.V. N.; Lange, T. I.
~.TITLE: Physicochemical properties of alloys of the indium arsenide--
tellurium section
TOPIC TAGS: indium arsenic tellurium system, indium arsenide tellu--
rium alloy, alloy physicoche~iical property, alloy electrical proper--
ty, alloy structure
ABSTRACT: Polycrystalline'specimens of indium arsenide containing
0.001 0.10, 0.20, 0.50, 1.00, 2.00, 5.00, 10.0, 15.0, and 20 at% Te
::have been prepared by direct fusion of the initial components. Their
''structure was investigated, and the thermal expansion coefficient,
t
density, microhardness, electric conductivity and,11all coefficient
.were determined. X-ray diffraction patterns showed that a diamond-
.1type structure exists in alloys with up to 20 at% Te. The micro-
2
1!hardn,-ss,of all the alloys is about the same, 350 + 10 kg/mm , which
!!fact indicates that'no substantial changes occur in the atom location:
11/2
?

!.ACCESSION NR.- AP4041366
-ior in the nature of the bon'ds b ductiv-
etween them. The electric con
i,,ity and the charge carrier concentration increase sharply with an in-.~
-;crease in Te content up to about 1.0% and then decrease somewhat.
Changes in the thermal expansion coefficient and density correlate
1well with the changes in the electron concentration; the former have
.1their minima at about the same tellurium content at which the charge
~.~carrier concentration in the alloy is the highest. From the results.
lof the study it appears that, in spite of a sharp difference in the
structure of the initial componp.,nts, the indium arsenide-tellurium
section with up to about 10 at% cellurium has a region of solid so-
Ilutions with a diamond-type lattice adjoining indium arsenide.,
Orig.
art. has: 2 figures,
1ASSOCIATION; Laboratoriya poluprovodnikovy*kh soyedineniy Akademii
:nauk MoldSSR (Laboratory,,,,of.semi6onducting compounds, Ac*ade.my of
iSciences MoldSSR)
ISUBHITTEDi 00 ATD PRESS: 3052 ENCLt 00
SUR CODEs MH NO REY BOVI 005 OTHERt 002
rd-
------------------ 7~ '17

1ACCESSION NR# AP4041382 S/0048/64/026/006/1080/1084
:ALMIOR: Lange, T.I.; Gitsu, D.V.; Lange, V.N.
TITLE: Investigatio~ of the microhardness anisotropy of some semiconductor com- f
pounds ZaTeport, Third Conference on Semiconductor Compounds hold in Kishinev 16 'to
21 Sep 19627
SOURCE: AN Sm. Izvestiya. Seriya fizicheskaya, v.28, no.6, 19G4, 1080-1084
ITOPIC TAGS: semiconductor, semiconductor property, microhardness, crystal structure'
'ABSTRACT: It is suggested that useful information concerning the forces within a,
,crystal may be obtainable from the easily measured microhardness anisotxopy, and a
number of measurements,.performed in an exploration of this possibility, are pr3-
sented. Vie microhardness measurements were performed by a method described else-
;where (Yu.S.Boyarskaya and M.I.Vallkovskayn, l(ristallografiya 7,261,1962; V.N.Lange'
iand T.I.Lange, Fiz.tverdogo teIu,5#2O29tl9G3),.which involves scratching the crys-
ital face in a controlled manner vith a special machine. Materials investigated in-
Iclude In9b, In2Te3, Be, Dip Sb, To and To-Sb alloyse In each case the miarohart~ness!
was plotted against the angle between the scratch and an appropriate arystallogra-
J/~ Card 1/~

ACUSSION NR: AP-1041382
phic axis, and a suitable trigonometric power series was fitted to the points.These
curves differ considerably in shape from case to case. When the crystal symmetry is
such that the period of the microhardness curve is 1200, the microhardness depends
not only on the plane to which the scratch is parallel, but also on the d-irectior.
in which it is traversed. This difference can amount to 30% in In2TC3. In some cas-
es the authors plot otherscrystal properties together with the microhap4ness.,Parti-
cularly striking is the agreement between the rather involved shape of the microhc,.rd-
ness curve for the (0001) face of Bi and that of the curve relating direction and
intensity of the Hall field. The addition to Di of small quantities of To or Pb,
which oppositely affect the olectron/holo ratio, distort the microhardness curve
strongly and quite differently. The authors argue that it should be possible to
obtain information concerning,tho band structure and the shape of the Fermi Lurftce:
from microhardness anisotropy measurements. The authors characterize their aigu-
Ments as "phenomenological". and "purely formal". Or-!g.art.hasi.4 formulas, 4 fi-,'
gures and I table*
Card 2/3

iACCESSION RR: AP4041382
'ASsocrATION: Latioratoriya poluprovodnikovy*lth soyedineniy Akadomii naiik lloldSSR
(Laboratory of Semiconductor Compounds# Academy of Sciences, Mo~dSSR)
iSUBMITrED: 00 00
ENCL.
;SUB CODS t 88 10 UR REP SGV: 008 OTURTh 002
Card 3/3

IANGE, V.N.; LANGEO T.I.; OGANYAN, S.G.
Studybig the polar anisotropy of abrasinn hardness in antimony
crystals by the selective etching methcd. Kristallograftia, 10
no.2:260-262 Mr-Ap 165. (KIRA 18:7)
1. Institut fiziki i matematiki AN MoldavEkoy SSR.

MkIrAMN
92o4-66- -EWT(I)/EWT(m)/t'~%il-,(w)/T/ViP(t)/ErdP(b) _-IJP(c) GG/JD
ACC NN AF6000-123 SOURCE CODE: UR/0058/65/000/008/ED54)rlii-55-
SOURCE*- Ref. zh.
Mika; A
P.
575 ' - 44/'
1, qV
AUTHORS: IAnge, V. Me; Be D.
9R0: none
TITLE: Anisotropy Of micl-ohardness
elm SOURCEe Izv. AN MoldSSR. Sere fiz.-tekhn. I matemo.n 10. 12, 1964, 61-6B
q Y, ~5-
TOPIC TAGS: 4it-imorw compound, crystal prope4yi hardnes
TRANSIATION: The scratchiIng method was used to.investigatelthe anisotropy of the
dcrohardness of Sb2Se3 czystals on the planes (1,D0), (010), and (001). It is shourn
that the magnitude.of the microhardness, and also the~external form of the scratt2hes,
depends essentially on the direction of the scratching on the investigated face. on
the (010) plane the maximum of the microhardness is observed in the scratch direi.-
tions (301) and An interpretation of the chdraicter of the dependence of 11;he
microhardness on the direction on the (010) face is difficult. Apparently, in S1)2Se3
-crystals the slip oce.urs along the (010) plane in the (100) direction. On the (001)
plane the minimum Of hardness is observed close to the (100) direction, and on the
(100) plane the greatest hirdr_nsa is in the (010) direction, i.e., perpendicular to
the emergence ofthe cleavage plane on the (160) face. It is also shown that in all
directions the hardness in scratching decreases upon illumination, i.e., a photo--
mechanical effect takes place. V. Osvenskiy.
SUB CODE: 20

k 00633-67 EWT(M)/LWP W 1jr1c) Kun~jfl
kCt_NR% AR6017810 SOURCE CODE: UR/0058/66/000/001/EO43/EO43
AUTHORS: Lange, V. N.; Lange, T. I.; Titov, V. A.; Chizhevskaya, S. 11.
TITLE: Influence of slight indium impurities an the physicochemical pr6pe~ie of
selenium
SOURCE: Ref. zh. Fizika, Abs. 1E328
REF SOURCE: Sb. Materialy dokl.. 1-y Nauchno-tekhn. konferentsii Kishinevsk.
politekhn. in-ta. Kishinev,-1965,- 70
TOPIC TAGS: selenium, indium, thermal expansion, solid solution, crystal impujity,
impurity center, physical chemistry property
ABSTRACT: To clarify the question whether the impurity atoms in Se are actually
grouped together, measurements were made of the density, and coefficient of ther-
mal expansion of allorls of the Se-In system, and also the viscosity of the cor-
responding melts. It is established that the variation of these properties with
increasing In concentration it; a complicated one. The data obtained, in the opinion
of the authors, confirm the hypothesis that groupB of In atoms are formed, and also
indicate that the atoms (complexes) of In arrange themselves in chains made up of
selenium atoms, and do not dinpose themselves between them. [Translation of abstract.
SUB CODE: 20P
pb
Card 1/1

L 05907-67 -,,71 k M)
ACC NRt AR6017479
W /ET!
IJP(c)
JD
SOURCE CODE: UR/0137/66/000/001/AO08/AO08
_4
AUTHOR: 1
pange, V. N ; Lange, T. I.; Titov, V. A.; Chizhevskaya, S. N
TITLE: Effect of in-tum Im-nur-ities on the physical and chemical properties of
selenium _0 'T
SOURCE: Ref. zh. Me,-llurgiya., Abs. IA53
REF SOURCE: Sb. Matc~-ialy dok:,.. 1-y Nauchno-tehhn, konferentsii Kishineya
in-ta. Kishinev. 196~.
TOPIC TAGS: indium, selenium, indium containing alloy, selenium base alloy
ABSTRACT: The density and coefficient of thermal expansion of alloys in the Se-In
system are measured 13 well as the viscosity of the corresponding melts to determine
whether grouping of impurity atoms in selenium actually takes place. It is found that
these characteristics change in a complex manner as the indium concentration is in-
creased. The authors feel that the resultant data confirm the hypothesis of grouping
of indium atoms and also indicate that the indium atoms (complexes) are incorporated
in chains made up of selenium atoms rather than being distributed among them. (From
RZh Fiz.) (Translation of abst--act]
SUB CODE'~
Card I/! KH UDC: 669.7761

LANGE, V.
27662 0 rasprastranenii roda ir-gi (Amelmchier Mod.) na
terTitorii latv*skoy SSR. trudy in - ta lesokhoz.
problem (Akad. nauk latv. SSR), Vyp. 1, 1949, a. 151-
61o --- na latysheyaze --- rezyume na ruse yaz.
SOt Inizhnaya Letopis,, Vol* 1., 1955

LAIME, V.
29165
f
Nekotorye clannye o ka,-,hestva sem-ran sible
,~kilcdh i avrcpe-ysk-ikt- listrennits,
proizrastayushchikh n territorii latriyskoy 99R. Izvestiya kkaA. nauk
Latv. SSR, 19419, No. ~. s. 123-27-11a lat)rsh. yaz.-Razyuma na Ras. yaz-
3ibliogr: 5, liazv-
SO: Latoois' Z;iurnal.'n:,rkh Statey, Vol. 39, 1949

m'SR/Forestry - General Ilroblem 0 K.
Abs Jour : Ref Zhur - Biol., Ila 15, 1953, 67931.
Author : Lange, V.
Inst : Latvian Agricultural Academy.
Title : Cor,;parative Data for 1939-1940 and 1955-1956 on the Effect
of Winter Frosts on rorcst Species in the Latvian SSR.
Orig Rib : Tr. Latv. s.-kh. akad., 1957, iTo 6, 465-476.
hbstrx-t : Tables iXre:,gi-VOn,;of the results of observations of forest-
brush species from 400 different parts of the republic.
Species of the following genera are represented- Abics,
Chamecyparis, Juniperus, Larix, Picea, Pinus, Pseudotsuga,
Taxus, Thuja, Tsuga, Accr, Aesculus, Alnus, Amelanchier,
Berberis, BetuM, Caragana, Carpinus, Carya, Castanca,
Cerasus, Co:Lnus, Corilus, Cotoneast,.~r, Cratnegus, 31acaoms,
Evonimus, PaTiu, Pm.~inus, JUI;1uns, 1-doorm,m, Uriod(.,i(Iro,,,
Oard 1/2

BIRMANE, 4.; IMBURE, M.; GALENIEKs, p.., prof.p doktor; JAUDZENE, V.;
ffTEkSCNE, A.; OZOLINA, E.,, retsenzent;-LbU&,-2" retsenzent;
I DI14DINS, J., reid.; -KRASOVSKA, M.,, tekha. red.
[Flora of the Latvian S.S.R.)Latvijas PSR flora. P.Galenieka
red. Riga, Latvijas Valsts izdevnieciba. Vol*4* 2959. 524 p.
[In Latvian] (14IRI 15-01)
(Latvia-Botamy) ,

IAEGE, V., inzh.
Soma defects of the UralZIS-353A engine and methods for the
determination of these defects. Avt. transp. 37 no.8:24-25
Ag 159. (MIRA 12:12)
(Automobiles--Engines)

,- LANGE, V.,--inzh-
z
Reducing the formation of foam in the lubrication system of
the UralZIS-3:53A engJmes. Avt.transp.- 39 no.3:42 Yx 161.
(MIRA 34 :3)
(Automcbiles-Lubrication)

LAME, V.I., redaktor; SHAPIRO, G.M., tekhaicheskiy redaktor.
[Specifications for mechanieal wood working] Normali po
mekhaxlcheskol o'brabotka dreveslay. Moskva, Goo.izd-vo
mestnoi promysh. RSM, 1952. 56p. tjocrofiW
(MM 9:4)
1.Pbassia 1917- R.S.F.S.R.) Mialsterstro mestuojr prc-il-
shlellmosti. (Woodworking ii;dustries)

KONDRATITEV, N.P.; SHTWi, B.O.; CfIMWSIIOVA, T.Te.; LANGE, V.I.,
redaktor; POLOSINA, A.S., tekhnicheekiy
[Operation and naintenance of a fleet of automobiles and
tractors in the petroloun industry-, a collection of articles]
Ekspluatataiia I remont avtotraktornogo parka neftianoi pro-
vysblennosti; stornik materialov. [Sost. H.P.Kondratlev, B.O.
Shter, T.g. Chernyshoval Izd.2-oo, ispr. i dop. Moskva, Gos.
naucbno-tekhnAzd-vo neftianoi I gorno-toplivnoi lit-ry,
1952. 502 P. (MIRA 8:10)
1. Russia (1923- U.S.S.R.) 1-4inisterstvo neftyanoy promyshlen-
nosti.
(Automobiles) (Tractors) (Petroleum Industry)

FRIDWASDI, A.A.0 kandidat takhnic:heskikh nauk;,LARGE, V.I.. rodaktor;
)W,INIKOVA, N.V., tekhalcheskiy reclektor
Eloather processir4 In looal tanneries] Tyrabotka kozhl na savodakh
meatnoi promVshlonnosti. Ifoskva, Gos. lzd-vo mostnoi promyshl.
RSIPSR, 1953. 295 1?. (MLRA 7: 10)
(Leather industry, and trade)

OGRTZKO, TI.Y.; FRERMI, M.I.; LANGE, V.I., redaktor; MELININDU, N.V.,
tekbaicheekly reaak-tor-
(innovators in furniture making] Mebellshchiki-novatory. Moskva,
Gos.izd-vo mestnoi promysbl.RSFSR No.l. 1954. 37 P.(KI-RA 8:11)
(Furniture lndustry)t'

VOLKOV, V.A.; LANGE, V.I., redaktor; MELINIKOVA, N.V., tekhnichaskiy
- ~Z.-
redaktor,_~_ .~ ~:e ' :': L'
[Repair of metal equipment in common usel Remont bytovykh metal"Li-
cheskikh izdelii. Moskva, Go3. i2d-vo mestnoi i toplivnoi pro-
myshlennoBti RSFSR, 1954. 71 P. (MLRk 8-.1)
(Metalwork--Repairing)

-ODNORAWV, N.V.; LIB3RW, A.B., 3peteredaktor; LANG3, V.I., redaktor;
MZLINIKOVA, N.V., tekliredp-lrtor.
(Decorative finishIng of wtal consumers' goods] Dakorativnaia
otdelka metallicheiikikh izilelii shirokogo potrebleniia. Moskva,
Rosgizmestprom, l9!;4. 102 p. (KLRA 7:11)
(Metals-Finishing)

G01MIN, I.M.; KOSTRIKIN, Tu.M., kandidat tekhnichoskikh nauk, redaktor;
LANGN, V.I., redaktor; MKGINIKOVA, N.V., takhnicheekly redaktor.
[Water treatment for 10W preewire boiler installations] Vodoobra-
botka v kotellnykh uetanovkakh maloi moshchnosti. Pod red. IU.H.
Kostrikiana. Moskva, GkDs. izd-,ro mestuoi i toplivnoi promyshl.
RSnR, 1954. 124 p. EMLcrofilm] (MLU 8:2)
(Steam boilers)

KHOKWV. )MLINIKOVA, N.V., tekhnichookiy
rodaktor.
(Brief mamml of a farniture uskerl Kratkii spravochnik mebellshchika.
Moskva, Goo. izd-vo melstuoi i toplivnoi pronWahlennosti RSFSR. 1954.
317 p - (MlRA 8:2)
(IFurniture industry)

pRENKELI, M.I.; OGRYZKO, PJ.; LANGS, V.I., redaktor; MELINIKOVA, I-V-,
tekhnicheskiy redaktor.
(Progressive metbods of makiog semirigid chairs] Peredove metOdY
v tekhnologii proizvodstva palyzhestkikh stulleve Moskva, Goo.
lzd-vo mastuoi proqrflh..1955. 53 P. (MIRA 8:12)
Obairs)

TUR.CHAK, I.Ta.,- LANGE, V.I., rmcbiktor; MMINIKOVA, N.V., tekhnicheekiy
rodaktor.--,,---
[Methods of testing china and earthenware] Metod7 ispytaniia
-farforovol i falansovoi -posudy. Moslcva, Goo.izd-vo mestnoi
i promysh.,1955. 69 p. (RLRA 9.1)
(I>Ottery)

YAKOVKIN.H.V.; LANGB,V.1., redaktor; MELINIKOVA,N.V., tekhnicheskiy
reiiaktor
[Volumetric tables for lumber; up to 100 Pieces] Tablitsy obOemov
pilomaterialov; do 100 shtuk. Moskva, Gos.izd-vo mestnoi protweblan-
nosti RSFSR, 1955. 203 P. (MLRA 9:1)
(Lumber trade---Tables and ready-reckonera)

TARAN, K.A.; HATSKIN, L.A.; LANGE, V.W, vedushchi.y red.; POLOSINA,
I
A.S., teklia.red. - .
(Tank-farm gagerl Slivshchik-nalivshchik nefteb82. MOqkva,
Gos.nauchno-tekhn.:Lzd-vo neft. i gorno-to:plivnoi lit-ry,
1951. 16o p. (MIRA 12:10)
(Petroleum--Storage)

:nvestigation of the efficlency coefficients In the solid s0lutiGll
system AlSb-GaSb. 1. 1. Burdiyan. (10 minutes).
i-nvest'gation of some properties of indium arseno-telluride doped
(Not Presented)]
w.th bismuth. D. V. Gitzu, S. I. Radautsan. I-
Physico-chemical properties of the pseudo-binary alloys of arsenic
with indium telluride. B. P. Kotrubenko, ytj! _4~kng!~., T. 1. Lange.
SEudy of the anisotrppy of microhardness of some semiconducting
coaiipounds. D. V. Gitzu, V. I. Lange, T. I. Lange. -
(Presented by 0. V. Gitzu---15 minutes).
Re-port, ?.resented at the 3-:d '11,Tational Crnference on Semiconductor
no re,,, 16-21 Sept 1961
rapounds, Kishi

IANGE, V. N., Candidate Phys-Math Sci (diss) -- "Irrrestigation of anomalies in
the pbysical properties of mDnocrystals of tellurium with small admixtures of
selenium and sulfur". Leningrad, 1959. 11 pp (Min Educ RSTSR, Leningrad State
Ped Inst im A. I. Gertsen), 150 copies M. No 22, 1959, 108)

LANGE, V.N.; REGELI, &.:I.
Some anomalies in the interdependence of denBitv and microhardness
of N-Sa and Ta-S alloys. Piz. tver. tels. 1 no.4:559-561 '59.
(KIRA 12:6)
1.1eningradskiy gosudaretvenny7 pedagogicheskiy institut im.
A.I. Gertsena.
(Tellurium alloys)

IANGE, V.N.- REGELI, A.R.
Peculiarities of the electric proper-ties of continuous solid so-
lutions in the systems Ts - So and To - S. Viz. tvar. tela 1 no.4:
562-564 '59. (MIRA 12:6)
l.Ieningradokiy gosudarstvennyy pedagogicheakiy institut im. A.I.
Gertsena.
(Tellurium alloys--Electric proporties)

84591
S/181/60/002/010/013/051
13019/B070
0 C2 ~/' 0
AUTHORSa Lange, V. N. and Regell, A. R.
TITLEa The Peculiarities of the Dependence,of the Forbidden Band
Width and the Mobility of Carriersion the Composition of
Tellurium - Selenium and Tellurium .. Sulfur Solid Solutions
IA
PERIODICAL3 Fizika tverdogo telaq 196o, Vol. 2, No. 10, pp. 2439-2445
TEXTa Data about the dependence of the forbidden band width and the hole
mobility in the impurity region arq given as function of the composition
of the systems Te - Se nd Te - S:fthese data provide a proof of the
mechanism of the action of the impurities.-The results on hole mobility
are shown in Figs. 1-4. The change of resistivity of the Te - 3 alloy in
a magnetic field is graphically shown in Fig- 5; the dependence of this
change on the composition of the alloy is shown in Fig. 6. The results on
forbidden band widths are collected in a table. Prom the results obtained
here, it is concluded that the introduction of selenium or sulfur atoms
leads to an increase in the hole concentration and electric conductivity.
The structural changes brought, about by the introduction of the impurity
Card 1/2

84591
The Peculiarities of the Dependence of the S/181/60/002/010/013/051
Forbidden Band Width and the Mobility o:t B019/13070
Carriers on the Composition of Tellurium - Selenium and Tellurium - Sulfur
Solid Solutions
atoms are discussed on the two dimensional lattice model (Fig. 7). The
anomaly of the mobility is interpreted on this model. Since the transport
of the carrier from one to the other chain is easier in a lattice with
distorted chains, an increase of the macromobility takes place while the
micromobility decreases. The change of resistivity in the magnetic field
expresses the degree of anisotropy of the material. This change is
minimum in isotropic substanceo and maximum in strongly anisotropic sub-
stances. There is no change in the forbidden band width for small im.-
purities, only when the impurity concentration is a few per centq does a
change appear possible. The minimum of the dependence of the forbidden
band width on the composition at 0.5 - 0.10 at % agrees with the above
mentioned mechanism of the action of impurities described by the authors.
There are 9 figures, 2 tables, and 8 references$ 4 Sov-Jet, 3 US, and
I Sviss.
ASSOCTATIONs Institut poluprovcdnikov AN SSSR Leningrad
-S-e2Ltc-onductors of the Academv of Sciences
SUBMITTEDs April 4, 1~1
Institute of
Card 21-2

q, S/081/62/000/006/012/117
B166/B101
AUTHOR; Lange, V. N.
TITLE: Evaluatic)n of the probability of formation of impurity atom
complexes in tho systems tellurium - selenium and tellurium
- sulfur
PERIODICAL: Referativhyy zhurnal. Khimiya, no. 6, 1962, 36, abstract
6B226 (Uoh. zap. Ussuriysk. gos. ped. in-t, v. 2, no- 3,
1961, 3-11)
TEXT: An approximate evalu&tion is given of the probability of formation of
various combinations of impurity atoms in a Te - Se solid solution as a
function of their concentration. ~bstracterls notet Complete translation-,I,
Card 1/1

gqr)~O;
S/058/6P,/000/008/075/134
A061/A101
AUTHORS: Lange, V. N., Regell, A. R.
TITLE: Some propertf-es of tellurium - sulfur and tellurium selenium
systems
PERIODICAL: Referativnyy zhurnal, Fizika, no. 8, 1962, 25, abstract BE187
(Tch. zap. Leningr. gas. p9d. in-ta im. A. 1. Gertsena", 1961,
v. 207, 5 - 11)
TEXT: Te-Se and Te-B systemn possessing a specific molecular chain struc-
ture have been investigated.. It is. apparent from the~cited dependences of the
electrical properties of Te-S alloys on composition that all increase of elec-
trical conductivity, of carrier mobility (holes), and a drop of the Hall effect
are observable in alloys with an 3 content of v 0.05 - 0.1 at.%. The presence
of two "special" points, wherein tha properties change similarly as above des-
-cribed, has been discovered for the Te-Se system. The first point is detected
at Se concentrations of - 0.1 at.%, while the other shifts toward the region of
high impurity concentrations in alloys prepared from purer Te. The anomalies
Card 1/2

S/058/62/COO/008/075/1-~4
Some properties of ... A061/A101
of local
observed in the electrical propert--'es are related to the formation
structural defects (vacancies related to chain discontinuities), which is c6n-
firmed by anomalies in density and hardness. ~J-D
Yu. Al'shevskiy
(Abstracter's note: Complete tran,."lation]
Card 2/2

S/139/62/000/003/ol4/o2i
E039/E420
AUTHORS: Veraksa, V.I., Lange, V.N., Sukhamova, R.V.
TITLE: Some characteristics of the microhardness of single
crystals of tellurium with small admixtures of antimony
PERIODICAL: Izvestiya vyssh,4.kh uchebnykh zavedeniy. Fizika,
no.3, lg()'L,, 124-126
TEXT: The effect of small admixtures on the properties of.
semiconductors in general is discussed and published work on
tellurium alloys reviewed. The work described in this paper was
undertaken on the grounds that changes in mechanical properties
must be closely connected with structural changes in the lattice
of the alloys. Samples of the binary alloy Te-*Sb were prepared
from vacuum distilled materials mixed for half an hour at 5000C
with an electromagnetic vibrator. Single crystals were then
grown and annealed for 10 hours at 3000C. Two series of
microhardness tests were carried out and the results are
expressed in terms of hardness relative to pure tellurium as
unity. As the antimony content increases there is an initial
decrease in hardness to about 0.6 for 0.002% Sb rising to
Card 1/2

S/139/62/000/003/014/021--
Some characteristics of ... E039/F,420
4 maximum about 1.4 at a concentration of 0.01% Sb after which
"0
the hardness tends to decrease again. This anomalous behaviour
may be correlated with changes in the number of defects as the
concentration of Sb is altered. Comparison is made with
analogous results on the Te-Se system obtained by other authors
and in particular with results obtained by Japanese a,uthors on the
change in electrical properties in the Te;-Sb system. The authors
conclude that there is still. insufficient data.and for
clarification comparison with other properties and systems is
required. There are 2 figures.
ASSOCIATION: Ussuriyskiy gospedinstitut
(Ussuri State Pedagogical Institute)
SUB'MITTED: January 9, 1961
Card 2/2
1

S1058163 3/000/002/046/070
A1601A101
AUTPORS: Lange, V. N., Lange, T. I.
TITLE: The temperature dependence of the mobility of current carriers in
the tellurium-selenium an6 tellurium-sulfur systems
PERIODICAL: Referativnyy zhurnal, Fizika, no. 2, 1963, 72, abstract 2E483
("Izv. A14 MoldSSR", no. 5,. 1962, 113 - 116)
TEXT: Presented are experimental curves of the dependence of l&Ro-(R is
the Hall constant, -,- the specific electric conductivity) on the temperature in
the range of 90 - 3900K for the samples of the Te-Se and Te-S systems with a
various content of admixtures (Se and S respectively). The curves reveal that
an addition of Se (or S) in the amount of 0.05 - 0.1 atomic .51 leads to an in-
crease of the interval in which the mobility of RT slightly depends on the tem-
perature. This fact is connected with an increase in the number of defects in
the lattice. When further increasing the content of Se, complexes of impurity
atoms start to develop. As a result, the concentration of defects decreases.
Hereby, the interval of the weak dependence of RT on the temperature is also
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S/o-58/63/ooq/oo2/G46A)7G
The temperature dependence of the ... A160/A1O1
diminished, since in samples with a small concentration of defects the scattering
on phonons starts to take effect at laizer temperatures. When increasing the con-
tent of Se (or S) up to 0.50 atomic %, the scattering on impurity atom complexes
starts to play an essential part, and a quick drop of the Rcr~-product becomes
noticeable at a more higher temperature. It is shown that a quick decrease of
Ra, observed-:ih'.Te.-- Se and-Te.- S alloys during a transition to adequately high
temperatures, should not be explained by a change in the width of the forbidden
zone.
[Abstracter's no-te: complete translation]
A. Kozyrev
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MM
19496-63 E-,'iP(q)/E!7T(m)/E'! (B)/BDS AFFTC/ASD JD
11P
.ACCESSION NR-. AP3003917--..-.~ S/0181163/005/007/202912031
AUTHORS: Lange. V. N.;,,Lapge, T.
TITLE: Investigations on the anisotropy of-microhardness'in indium antimonide.
determined by the scratch test
"SOURCE; 2029-2031
Fizika tverdogo tela. v. 5, no. 7, 1963,
TOPIC TAGS: microhardn ss, anisotropy, In, Sb, scratch test, cleavage plane,
crystal face, plastic characteristics
ABSTRACT: The authors have used the scratch test on-the (111) crystal face and
I the (110) cleavage plane in n-type InSb crystals in which thp concentration of
active uncompensated Impurities was on the order of 1017 cm-3. The scratching
s-done with a.5-100 diamond pyramid in a M-3 microhardness fester by moving
w
a
the object stand along one of the coordinate axes. This was done by smooth
manual rotation of the appropriate knob, with a load of lOg on the pyramid. The
hardness was computed from 20 measurements and was taken as the load (in kg) di-
are a
vided by the-square of the scratch width (measured -in mm) hown In
Caid

;-L 19496-63
ACCESSION-KR: AP3003913
Figs. 1 and 2 (see enclosures).,~On the basis of these results,*it is concluded
that in studying the anisotropz of plastic characteristics of a crystal the
:1 scratch test may be used as %mll as.the indentation test, and it may prove to.be.1
re sensitive. "The authors express their thanks to M. S. Ablova and A. R,
for discussing the results and also to 1. P. Holodyan.for kurnishing singld'
crystals for the investigation." Orig. art. has: 2 figures.
ASSOCIATION: Institut fiziki i mateuidtiki AN MSSR. Kishinev.(Institute of Physical
and Mathematics, Academy.of Sciences,-Moldavian SSR)_'
SUBMIXTED: 12Mar63 DATE ACQ: 15Aug63 ENCL: C12
SUB CODE:- PH NO REP SOV: 005 OMR: 002
Card 2 /,#.Z-

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'7F

VERAKSA, V.I.; LANGE, V.N.; LANGE, T.I.
Effeet~o'f--small additions of the elements of the Vb subgroup of' the
periodic table on soine properties of tell1irium single crystals. Zhur.
fiz.khim. 37 no.10:2308-2310 0 163. (MIRA 17:2)
1. Laboratoriya polnprovodnikov AN W~)~dtwskpy SSR,

NASLEDOV, D.N., prof., red.; GORYUNOVA, N.A., prof., red.;
GITSU, D.V., kand,. fiz.-mat. nauk, rc-4.; LANGE, V.11.,
kand. fiz.-mat. nauk, red.; RADAUTSAN, S."I';'i- kand. fiz.-
matem. nauk, red.
[Research on semiconductors; new semiconductor materials]
Issledovaniia po poluprovodnikam; novye poluprovodnikovye
materialy. Kishinev, Kartia Moldoveniaske, 1964. 173 p.
(MIRA 17:5)
1. Akademiya nauk Moldavskoy SSR. Institut fiziki i matema-
tiki.

ACCESSION M. ' ;-~P4028455
'AUTHORS: Lange, V. N.; Lange, T. I.
of the anisotropy of the photomechanical effect in indium
antimonide and in antimony
'~SOURCZ. Fizika tverdogo tela, v. 69 nos 4, 1964, 1220-1222
,TOPIC TAGS: photomechanical effect, indium antimonide, antimony, miorohardness
~tester PMT 3, ox7stal property
iABSTRACT: By means of a PHT-3 microhardnbss tester, the authors have shown that the'
ivalue of microhardness is related to the width (d) of the scratch and the pressure
2
1(P) at the point of the instriment by the formula H - PC . They also established
'ithat the photomechanical effect is anicotropio, giving rise to diminution in hard-.. I
Iness, defending on direction, that ranges from 2 to 6% (as compared to the value 'in
idarknesa for cr7stals of InIM) and from 4 to 1W,,for crystals of Sb. It was
iobserved-that the positio*ns of the maximums of miorohardness in crystals of 3b
1(large maximums of both H and Hil i.e., maximums of hardness both in darkness and
d
H d_Hi
InSb the
;ixx light) oorreepond to the maximum position for -T-, whereas in
d
Card
S16i B'i/64/006/004/1220/1222

IACCESSION NRt AP4028455
d i
lindividual maximums corzc;apond to minimums of -1,;-. "The authors express-their
isineere thanks to Professor A. R. Regell Tor discussing the results and to U.'s.
iAblova for preparing the single crystals of indium antimonide and for her interost
iin the work." Orig. art. has*.2 figures and I table...
!ASSOCIATION: Laboratoriya poluprovodnikov AN Molday. SSRI Kishinev (Laboratory of
iSemicoA
~potors, AN Moldev. SSR)
jSUBMI=s. 23AU963 ENCL: 00
;so CODE, F.C, SS NO REF SOV:' .006 OTHERi 0031:
Card 2/2

ACCESSION NR: AP4041366 S/00481641028/006/100711009
AUTHOR: Kotrubanko, B.. F Lange,.V. N.; Lange, T. 1.
TITLE: Physicochemical properties of alloys of the indium arsenide-
::tellurium section
Z", - le,6,1
Ue
TOPIC TAGS: indium arsenic tellurium system, indium arsenide tellu-
rium alloy, alloy physicocheinical property, alloy electrical proper-
ty, alloy structure
ABSTRACT: PolycryE.talline'specimens of indium arsenide containing
0.00, 0.10, 0.20, 0.50, 1.000 2.00, 5.00, 10.0, 15.0, and 20 at". Te
have been prepared by direct fusion of the initial components. Their
:.structure was inveatigated, and the thermal expansion coefficient,
density, microhardness, electric conductivity and,11all coefficiant
;were determined. X-ray diffraction patterns showed that a diamond-
.1type structure exiats in alloys with tip to 20 at% Te. The nic-ro-
4, 2
lihardness of all the alloys is,about the same, 350 + 10 kg/mm . which
!,,tfact indicates that no substantial changes occur in- the atom locations
J/2

ACCESSION NR: AP4041366
,,or in the nature of the bon'ds between them. The electric conductiv-
~Jty and the charge carrier concentration increase sharply with an in
,;crease in Te content up to about 1.0% and then decrease somewhat.
IChanges in the thermal expansion coefficient 'and density correlate
well with the changes in the electron concentration; the former have
'their minima at about the same tellurium content at which the charge
..carrier concentration in the alloy is the highest. From the results.
"of the study it appears that, in spite of a sharp difference in the
structure of the initial compone.nts, the indium arsenide-telluriurr
section with up to about 10 at% cellurium has a region of solid so-
lutions with a diamond-type lattice adjoining indium arsenide.- Ozig.~
I
art. has: 2 figures.
ASSOCIATION: Laboratoriya poluprovodnikovy*kh soyedineni~ Akademii
nauk MoldSSR (Laboratoryof.semi6onducting compounds, Academy of
Sciences, MoldSSR)
SUBHITTED: 00 ATD PRESS: 3052 ENCL: 00
SUB CODEs MM NO REF SOVi 005 OTHZRs 002
.;2/2

ACCESSION NR, AP4041382 8/0048/64/028/006/1080/1.084
!AUT11OR: Lange, T.I.; Gitsui D.V.; Lange, V.N.
TITLE: Investigation of the microhardness anisotropy of some semiconductor com-
pounds ff-eport, Third Conference on Semiconductor Compounds hold in Kishinev 16 to
121 Sep 19627
SOURCE: AN SSSR. Izvestiya. Soriya fizicheskaya, v.28, no.6, 1964, 1080-1084
'ITOPIC TAGS: semiconductor, semiconductor property*, microhFrdness, crystal structure,
.ABSTRACT: It is suggested t hat usefu I information concerning the forces within a
crystal may be obtainable from the easily measured microhardness anisotropy, and a
number of measurements, performed in an exploration of this possibility, are pro-
~aented. The microhardness moasurements were performed by a raethod described else-
where (Yu.S.Boyarskaya and M.I.Vailkovskaya, Kristallografiya 7,261,1962; V.F.Lange'
T.I.Lange, Fiz.tverdogo tela,5,2029,1963),,.which involves scratching the crys
ital face in a controlled manner with a special machine. Materials investigazod in-
~clude InSb, InlaT03# Be, Dip Sb, Te and To-Sb alloys, In each cage the microhurdness:
was plotted against tho angle butwoon the scratch and an appropriate crystallogra-
Card 1/3