SCIENTIFIC ABSTRACT LITOVCHENKO, M. P. - LITOVCHENKO, P. G.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000930210002-4
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: March 13, 2001
• Sequence Number: 2
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

sov/81-59-3
Translation from-, Referativnyy zhurnal. Khimiya, 1959, Nr 13, P 529 (USSR)
AUTHORS: Vinitskiy, L.Ye., Litoych
TIM: The Thermal Regeneration of Natural Rubber in the Presence of Activators
PERIODICAL- Tr. Vseros, n.-i, khim, in-ta prom-sti mestp. 1)odchineniya, ic@-)8, Nr 6,
pp 45 - 52
ABSTRACT: The effect of accelerators of the class of thiazoles (I) and of the
plastication activator trichlorothiophenol (II) on the therma'.. regeneration
of the vulcanizates of natural rubber has been studied. The Ihermal regene-
ration is activated by I and II and is accompanied by an inerfiase in the
quantity of bound S and the solubility. The optimum content (i-f I and II is
1.5 - 2 weight parts per 100 weight parts of rubber.
V. Glagolei
Card 1/1

S/081/62/000/'037/031/033
B168/B101
AUTHORS: Vinnitakiy, L. Ye., Litovchenko, M. P., Palekho-a, S. G.
TITLE: Heterogeneity of rubber during the plasticizing process
PERIODICAL: Referativnyy zhurnal. Khimiya, no. 7, 1962, 65!., abstract
7P317 (Tr. Vaeros. n.-i- khim. in-ta prom-sti m(!stn.
podchineniya, no. 8, 1959, 63-71)
TEXT: The heterogeneity of natural rubber and synthetic rubber (CKMC-30
(SMS-30), CKSM (SKBM), polyisobutylene) during the plasticizin6- process
was studied. The heterogeneity of natural rubber with regard to
plasticity, softness and recovery decreases with rolling. Wher. Captax,
Altax, diphenylguanidine and Renacit are introduced the inhomoeencity of
the masticated rubber increases. The uresence of plasticizera which
combine well with rubber (pine tar, sl ndle oil, petroleum asphalt) helps
to reduce the heterogeneity of the masticated rubber. The vaziation in
heterogeneity of SKMS-30 during1rolling and heat plasticizing is similar
to that of natural rubber. [Abstracter's note: Complete tranelation-3
Card 1/1

U368
Is. f 1:-W 6/031/62/000/018/055/059
B168/B11305
AUTHOR6s Palckhnva, i. G., Litovchenko, .,:. F., Vinitskiy, L. Ye.
TITLE: -Activated thernal pla:stification of natural rubber
-PERIODICALs Re.'erativnyy zhurnaL. Khimiya, no. 18, 19062, 559, abotract
1OP484 (Tr. Vseros. n.-i. khim. in-ta-prom-sti mestn. pod-
chineniya, no. 8, 1959 72 -'84)
TEAT8 300 'g natural rubber in the' f orm of a trips. measuring 12-15 * 5.2. 5-4 M.
viere rolled for 2 zAn laboratory rolls, and addi-tives intensifyin-
planstificalion were introduced during this pr9cess.. Therinal pl--.3tification
were introduced durin- this: process. Thermal glastifi 'cation wa., carried
out in cal-.inets hented electrical 'ly to 120-160 C. The plasticj.-@ed rLibber,
kifter being left to &Aand for 3-4 hrs,*vas homogenized for 2 mir and --.Ftr-r
2 hre its pi.asticity, i3oftneau and recovery wore dutormined tic(!(-r-inr,- to
W1415-53 (COST 415-53). The rate of thermal plastification ircri:@u,es
rapidlZ@ when Captaxt Altax, di _.)heny1_-uanidine, Repapit, dinitroph@@nyl-
hydraztne or benzoyl peroxide is added to the natural rubber. ."hen 3
.parts by weight of mazut, petroleum asphalt, Rubra),sAr&eai1cv#ro tar is
Card 112

13/06,'1/6 2/000/01 8/o Ii 5/0 5 9
Activated thefmal plautifipfLtion ... 316SIB186
added the Appticity of tIW4.natura:L rubber incroasep :.-ith the tJI1)C,---a,UII1:e
and ther.-nal]p,;aetificatior~.-tirie, whilst the rate of thermal plaE,-,ificution
increases to., only a nogliglble extent. The mechanical propertic.3, their
Variation w@@n the material-, is heated and their re-,@stance to t@kr..Jal
aging in thepase of vulea,nized,rubbers based on thermally plasi;Lcized
rubbors are qintilar to thelproperties or ordinary vulcanized nulLral
rubbers. LAbstracter's no,te: Complete translation
Card 212

USSR/Human and'Animal Metabolism.
Abs Jbiw : Ref Zhur Blol., LO 3, 1959, 12423
Author : j4loychenko, N...G.
Inst : Chetnovitsk University
Title : Influeace of Sodium ana Chlorine Insufficiency on
Intensity of Tissue Respiration
T
Orig Pub : Nauchn. yezhegodnik. Chernovitak. un-t, 1956 (195-1t),
1, No 2, 24-27 f
Abstract : Deprivation of Na and Cl for 3 r-onths in rats led r-O a
depreu@;Ivn in tiesue respiration in comparison willl a
control group of animals which received full-valu(l
rations; in the liver (in mm3 of 0 in one hour)jtrom
258.4 to 94.12, in muscles from 58.1 to 17.44, and in
the kidi-leys frc--i 219.2 to 93.5.
Cara 1/1

LITOVCHENKO, N. Cand Biol Sci (diss) "Sig Effedt of low
Insufficiency of Sodium and Chlorine
tn the BiosynthesiB of Nicotinic Acid In kk
Animal Organisms. Chernovtoy, 1957. 19 pp 20 am. Oilin of Higher
Education USSR, Chernovtsy State Univ), 100 copies (14., 26-557.,106)
- 33

LVUTSICIY. K.M. [Leuts1kyj,
Effect of the defi
in food rations on
by the liver [with
487-493 158
K.M.], LITCHHEEK0, F.G, [Iqtovehenka, F.H.3
iency and excessive amounts of sodium w-d chlorine
om ' '
vitro synthesis of nicotinic Acid fr ' tryptophane
summary in English]. Mr.biAhim.shure r3kl nu.4:
A 11:9)
universi*@.eta.
1. Kafedra blokhimii Chernievtolkogo dershavnogo
(SODIUK.-PHYSIOLWICAL YFFECT)
(CMURINS-PHYSIOLOGICAL BP"=)
(NICOTINIC ACID)

LITOVGHWOO N,G, [Lyto-rehouko, N.H.]
Work of the Chernoytoy sgation of the Ukrainian 3iOChSMi,VAl
Soclety, Ukr.blakhlw.xhur. 32 no.3.-484-"5 160. (VIRL 13:6)
1. Sakretarl Chernovetskogo otdolenlya Uhmainskogo bioblel-
cheskogo obahchostva.
(CHMMOVTSY--BIOCHBNISTRY--RBSIIARCE)

Li loit "IF N, @J)' N'
Jj
Uslnq
itagnc,ii- nja"-.@-:

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EYIP(b)
7-4 /M. lu b069
Z4 0 Dobrovol' ki G. 0. (Engineer) j !@roy.L V.
777=
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6 T,
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TITU! Production of magnetically sor, materials using_ruder metmllurg3
6
TOPIG ZWS: - Powdir Mettw@urgy, zetlmnica engineering
IABSTIMCT,* At t
he "Eltktrotatoaritel."' plant in Zhitomir wixich makzssu -.trtcdl
A
na inEs typia: T-i
employed are tade of
!,rmco steel. In the facturl@ of "ring" parts from this steel , 8010 of the
materUl is Lwaoted in the fo:rm *f ahavinga, arvi the pi:oceati is labor car iuming.
Exrerimenteit inve-stigations waxe uAft by t1in Technbak-BA-mum-A d-
Design Lnstitutp- of the Kiev.&M@R
in cooperation with the ovor F-
LTu-r %-- Ar 11@
r -an ri "tt "MhMu ol selopting ei powder metallurgy procena 12( the
pro4ucUon of "ring" parts.
Card

S/1 85/62/007/002/0006/0 16
D299/D302
AUTHORS: Hlynchuk, K.D., Lytoyghenko, and 77
T I T ILB Study of carrier recombination in ger-,,rianiurm ',oped
impurities. III. Germanium dozed with .1g and tu
PERIODICAL: Mkrayinslkyy fizycl,.ny-.r zhurnal, v. 7, no. 2, 1962,
152 - 164
TEXT: The temnerature- and concentration denendences of -,.he minGri-
ty-carrier lifetime T in n- and p-type germanium dozed wi-@h ""r, and
Au, are investigated. This study is a continuation of two earlier
investigations on the recombination properties of Cermaniur. doped
with Ga, Sb, Fe, Co and 'Ni. The experimental procedure was descri-
oed by the authors in earlier works. The lifetime T was ieasured '),,r
t1wee-different methods: By the photoelectric nethod, by the statia-
nary values of the photoconduclivity, and by the @)hotom_-C-netil-
f. The results of the measurements of the temperature and conce.-
tration dependences of T are shown in figures. A conpari,.on of the
experimental results with the theory of recombination at muit-i-
Card 1/3

S/185/62/007/002/U-06/@,116
Study of carrier recombination D299/D302
charge centers, shows that in p-type specimens the carrier recorbi-
nation takes place through neutral- and single-chmarge A@- and AU
atoms, whereas in n-type specimens -- throut;h two-charge atoms. in
addition, the capture cross-section was determined of eli,,ctrons by
neutral and single-ahar,-,,e atoras, and of holes -- by two charCe 'j@- * '
and Au atoms. @xhe 4njec s 11
tion of Pe, Cop Nip Ag and Au imy.zritie i
ge-4"manium, leads to the formation of a system of deep aczeptor -'e-
vels, related to the various charged states of its atons. However,
only some of these levels play a predominant role in the reconbina-
zion of carriers. In n-type gernanium, the recombination 'ualkes pla-
ce through the same charged states of atoms of Fe, Cop Nip Ac@ an@
Au im-purities; therefore the temperature- and concentration
cence of T in such a material has similar shaPe for z.11 -.hese :i,::ru-
rities. In p-type Germanium nowever, the recombination lakes place
through different Charged states of Pe and Co atoms on i;he one 111@@nd,
and Nip Ag and Au atoms -- on the other. This has the rosult thats,
the temperature and concentrat`won dependence of T in sizoh a materind
differs sharply in both these groups of impurities. The impurity Ye,
Cop Ni, Ag and Au atoms in n-type germanium are recormbLiation ce.-.--
Card 2/3

TO V!-
37185
S/185/62/007/004/009,/018
D407/D301
AUTHORS: Hlynchu1c, K. D., Lytovchenko, N. M., and
Miselyuk, 0. H. -
TITLE: Measuring the rate of carrier recombinc.tion
in germanium by modulation of impurity photo-
conductivity
PERIODICAL: Ukrayins1kyy :Cizychnyy zhurnal, V. 79 1*io. 40
@1962, 38-1-394
TEXT: A method is descilibed for measuring the lifetime 'r'
of majority carriers in germanium. It is shoyni that this method
can be used for determining, at various temperatures, the capture
c--oss-sections of' majority carriers by the levels of the many-
charge Au. and Ni impurities in Ge. The method is based on
the stationary-photoconductivi!ty method (described by the authors
in an earlier work). Firs 't, a theoretical energy-band nodel is
proposed. Formulas are derived which relate the change in
Card 1/4

I(easuring the rate of...
3/185/62/007/004/00WO18
:D407/D301
resistance, the recombination characteristics of the impurity
centers, and the lifetime T Further, the exper 'imental pro-
cedure and measuring apparatus are described. The light source
(with wavelength -k = 2 to 10).L) was an absolutely black body.
By appropriate choice of the filters, it was possible tc single
out the wavelengths, for which the absorption coefficier.t of
light.by the Au and Ni impurities varied little. Th-3reupon,
V -
.the-to,tal number 1,Q of non-equilibrium carrier was detormined,
created each second by the light. The specimen under investi-
gation-was placed in a cryostat with a germanium window, Tne
enange in specimen resistance, on illumination, was det@rmined
by measuring its voltage 8 U. The lifetime was determLned by
the working formula
CS U (RH + r)2 PO lb
- . 0 - 0 - 9 (12)
U RHr k,@10 libi
Card 2/4

S/185/62/007/004/0(-')9/018
Measuring the rate of... D407/D301
the lifetime -C@ had much larger values than expected. This
may be due to the fact that the authors neglected addit:'.onal
photoconductivity related to light absorption by other S-centers.
There are 4 figures 1 1 table and 20 references: 11 Sov-.'.et-bloc
and 9 non-Soviot-bloc (inc*luding 2 translations). The -@ most
recent references to the English-language publications ::,ead as
follows: L. Johnson, H. Levinstein, Phys. Rev., 117, 11911
1960; T. Vogl, J. Hansen, M. Garbuny, J. Opt. Soc., 51, 700
1961; L. Neuringer, W. Bernard, Phys. Rev. Letters', 6, 455,
1961; F. Klaasen, P. Blok, H. Booy, Physica, 27, 48, 1961.
ASSOCIATION: Instytut napivprovidnykiv AN URSR (Insti,,-,ute of
Semi-conductors of the AS UkrRSR), Kyyiv
SUBMITTED: October 31, 1961
Card 4/4

S/181/63/005/003/035/04(;
3102/B180
AUTHORS: Glinchuk, K. D., Litovchenko, N. M., and Miselyuk, Ye. G.
TITLE: Trapping and adhesion of electrons on positive-tellurium ions
in germanium
:YERIODICI.L: Fizika tverdogo tela, v- 5, no. 3, 1963, 942-944
TEXT: Tf- has two donor levels in Ge, 0.11 and 0.3 ev below the bottom of'
0 +
the o-bard. Electron trapping and adhesion was investigated for To , To
To ++ impurities in n- and p-type germanium by measuring both the
attenuation and the stationary intrinsic photoconductivity. The hole trap-
ping cross section, S*@ g was calculated and for both carrier typns,,7.'0 the
h
lifetimes in thit free state, *ere determined as a function of tt 'pperature.
+ 19 2 0
The S h estimate yields 3-10- cm at 130 K; this is'only unkly dO)iandent on
temperature in the range 90-130 0K. There are 2 figures.
Card 1/3

S11 a 1,/63/005/003/035/046
Trapping and adhesion of electrons on ... B102/B180
ASSOCIATIO21: InstitUt poluprovodnikov AN 'USSR, Kiyev (Institute of Semi-
conductors 'AS UkrSSR, Kiyev)
SMUTTED: Ootc',jr 19, 1962
Fig. 1. god*l for the To atom in Ge; 8SS7= Sh; E'V-Fermi ',evel.
e
Fig. 2. -t(I/T) for p-type (1) and n-type (2) Ge with To impuri':ies;
Small diagram: The same for Ge with acceptor ions.
Card 2/3

S/181/63/005/003/035/046
Trapping and adhesion of electrons on... B102/B180
Fig. 2
.jid
Te
Te
n-type type
Card 313
9
Ar

OF /"D.
L 15221-6Z':
ACCESSION, NR 1 3 510181163100510071193311935
[AUTHOA: Glinchuk-, -K',. D.; Denisova Uiovehanko, N.- Xe @.i -
A. @D.;
'Ype siliCO6
TITLEs Recbmbffiatiq@,i of currefit carriers at Llttoms 1.1n,P
SOUPOE1 Mike tvari;!ogo tela), V. no 3963,
TOPIC TAGS: recombit4tion, current carrier,'.Zn,,Si, P-type alectron, holej@
capture: cross: sectioi,41-acceptor. level,* -atom, lifetime ,'speciflc resistan4e,
excess condtictivity zinc Bilico a
ABSTRACT s The authl6f ha. d t rmiMdi the capt-are cross section of elw@trons
A ve a
by.neutral titoms-to @16.1!o-15 c7and ot hole;3@ by,singly negatively charged atoms
to- be lo-13 cm2., This'cross section is practically i.-depende'nt of temperAture
within the range 80-200K. It is noteO@that neutral and singly negatively charged
atoms,of zinc, because of the relative large values of capture cross section for
lboth electrons and hoLias, car not bring abou-@ strong capture and trappingof
electrons in p-type silicon, lending to the appearance of lorg'-lived c9mponents
'in the relaxation of 4xc 6 ss conductivity,, 3-Ach atoms are effective recombination
1/2

GLINCIIUK., X.D.; LlTOVCIIENKO,, N.M.
Current carrier recombination on zinc atoms in -h--kM 0ilicon.
Piz. tver. tela 5 no.10:3003-3005 0 16,;. 04IRA 16:11)
1. Institut poluprovodnikov AN UkrSSR, Yd.yev.

GLINCHUK, K.D.; LITOVCHEN N.M.
Canture of current carriers in thermally treated silicon. Fiz.
tver. tela 5 no.1113150-3155 N 163. (KRA 26 112)
1. Institut poluprovodn:@kov AN UkrSSR, Kiyev.

E

-:4
(t
M, 6' b 4; At, 'WT(I)/WT(m)/)9WP(b)/T/ZWP (c)
ACCESSION 11H,", -`:AF50006T3_ S10181/64/006/012/3TO113TO2
AUTHOR,@ :D ovehen,
@dein.cfiiik, _:K L.."i t ko,:. 11. IJ
oft 0 -w-ce-ff" -s-i-kfaotv.-
77'
7777,041, 1 J 4
, At , - -7
z-1 6,
TOPIC :'I'AGS im **rfty_- Venter, impurity activation, Ampurity deactivation
ABSTRACT :,17he 40pe@dence @af- the concentration, of eauilibriux electrons
IpIu
no AA 0 e@s-po_;-on @ in r;.j.'y,__cente'ra has been investigated in @ s llico.,a
atoms.
impurity The initial
specimens@'_were, those whose conductivity vas determined by means of
easily Ionized c lfonors_@ lig, ir acceptors Na. When the impur',ties were
jr -means 0
introduced..1 -f-dirrusion at 1250C with concentrationa of
IV^ '16Lfi-" 7 >
10 7t'' - 3@@ -N or- N they were activated. Thermal treatment
or apdc.im.tus~mt~~300c.de&ctivated the impurities. Subsequent heating
of sped en'&-- 'h d&t~ct-i-,vtct-t-ed,-impurttier,- at _I2jGC r--activated. the
impurity -zenterif-.' -The activation of impurities due to heating at high
temperatqrea is a consequence of the fact that the solubility of im-
purities in semiconductors depends strongly an temperature. The
CO;-d'.j.j_

GLIIIGHUKJ, K.D. Lhlvichuk, F.D.]. L1-.'OVCN13jKO, 11,14* CL7tov(.h,--nkr,, T".M.3
Mature of trapping r;=-n*1.qrs In thermally trpsate@j si:Licon.
Ukr. Fiz.. zhur. 9 F'64 O-mu :L,-, vl
1. InatitIA AN U(:?SSR2 Kly;.-ri.
I

10 n i J-, i-
ITO
ACCESSION-' R:-- 1Mo43099-. S10185164/ 9/0 T/0805/080T
LUTHORS14 .01jkncW-.@. inchwk X#D.); aj aniaova,, A. D#);
-D6M@OV A, D. (D
enk6'. 14'U': (Uto'vch@.-IZo
Y*torch
TITLE:'., Th0 niature,, of centers -of trapping and capture of current
dairrLer :Ln, thel treated oilicon, 11.
5OURCE,: .4rayinstky-"y fl zy,*ohny*y, zhurnall-To 9 V UCO T,. 1964, 805-BW
TOPIC TAG .:.-trapping - a enter @6apture centeri current carrier trap-
ping ceutdr,.@ current carrier capture center, ailicon, iron additive,
copper .addl tive*, -nickel additive, zinc additive, palladium additive,
energy state, silicon structural defeat, annealing
The: p tug, of, currezi t carriers In silicon alloyed with
_--admixturps, of_-FeC Cu,- ' Hi, - Zn, or -Pd atoms , Vai ch in aer tain charge
stages.-tend to form aomplexes'jwlth them3elves or vrith oxygen, was
studied by, comparing t e e Ef
h. nertty- statq of ceater -produced by them,
an the @'change. in their concentra -tion, upon. aging, with analgOUS
Values ibr coatrol_.@, aamAes @The praaenoia of the additivap
-(Ou --@PeY-daUaad. ajj@-Ja6j4ea wo in,jiXe Condentretion of tlwelaotro:l and
hole tra:p x,4 the
-i plagdej, grs;, _donaeatrmtLoa,_.@ the change in concentration.
-card -/-Z

777T'-.
L 22,547-65
ACCESSION12: AP4043099
with VLme@, and-the energy state- of the, capture ceaters approximaGed
trations and- th
---the aoAcen a energy state in the contral thermally
treatell silicon. It was conoluded that complexes of the admixed
atoms, as well as structural defects, can be trapping and capture
centers for current carriers in n- and p-type ed.lican. A-anealing
does not necessarily deactivate the complexes- some of them,
especially the complexes with oxygen, are ijtabl(i at high temperatures,
Orig. art. has: 3 figures
ASSOCIkTION: Lrotytut napivpro-jdMkir All URSRO Kiev- (Institute of Smioonductorzj,
AN M&% L
-SUBMI TED f --20Mdr ENCL., 00
SUB CODE: SS, M HR R3,F SOV: 003 0 TH h'R 1003
-ard 2/2

L3412? -66 W(l)/EWT(m)/EWP(b)/8WP(t). LJP(c), AlhD
:73-6-NA7 AP6000882 SOURCE CODE: UR/0181/65/007/012/3669/3670
AUTHORS: GlinqhUk. K.D Denisova, A. D.; Litovehenko, N. M.
@ORG: I titute Qf-SeMiconduo.tors. AN UkrSSR.1 Kiev (Institut
lpoluproVodnikov AN UkrSS-R)-
iTITLE: Photoconductivity of silicon doped with deep Impurities
It 14 t 1@ It,-
'SOURCE: Fizika tverdogo tela, V. 7, no. 12, 1965, 3669-3670
TOPIC TAGS: silicon, photoconductivity, impurity level, temperature
dependence, semiconductor carrier, light excitation
AMITRACT: The investigation was stimulated by recent results of I.
A. Kurova and N. N. Ormont (M v. 6, 3708, 1964), who showed that
;,the photoconductivity spectra of.gold-doped germanium vary with the
temperature as a result of changes in the charge exchange of the im-
;,Purities upon illuwJ.nation. The authors report that they observed
in silicon doped with gold and zinc (which produce deep levels) a
itemperature variation of the photoconductivity spectrum under condi-
tions when no appreciable charge exchange of the impurities took
Card 1/2

L JU4127-66
AC(W*' NR: AP6000882
(D
place. The measurements were made with partially compensated samplew
with high resistivity that increased exponentially with decreasing
temperature. The photocurrent was found to be constant at low
.peratures and to grow oonsiderably at high temperatures. The
tem
shape of the spectral curvesalso was strongly temperature dependent..'
The.results are attributed to the effect produced by the depth of
thk- levels produced by the impurities and by the thermal excitation
of' the carriers from these levels. This produces effectively ad-
ditional centers whose optical ionization contributes greatly to the
-photoconductivity at low temperatures. The authors also report
tbat they observed in nSi + Zn extinction of photoconductivity, which
it3 connected., as.in germanium, with transitions to and from the deep
levels. OrIg. art. has: 2 figures.
S@b @COD i`@ SUBM
'DA"--.@05Jul65/:_:ORIG REF: 003/ PTH REF: 001
Qlr@@/2

- @6 MJT(m-)-" 0..P(t)/z-4P"bI/EXA(c) TJF(c TD
L 180
A(C-LSSION NP: AP5005912
Litav
chenko,
-:;4@ 77@
7
MWCF- Mcrayins"ki,7 fizycbzWy zhum- 1, v. 10, n%IT
t - s 2; 1965, lr@ 177 If5
1AGS: aillcon, doping, Lmpurity E.0111bllity, IjnVjxI,'y activiit'ori, impur'.'.y
deactivation
A!"")A'T: T4ir deals -4th tbe 11-Tinerce !2f -amzaI 1 nE at @Y\-
--ectrica,i behavior of Au, Zn, Pt, S, and ,Ye impurity atcAus in Ihe Lr-
S-@Qu am 1-200-12JUe into Ftn f@ cr 1Df n--tyu -ty-pe si !a cun. rT e re@-
ygr@q e and D
.@-C@v that ann4@&Ilng at P)'.)C -rltler f'r@'TL t!-f- @:1
jr, aja earlJer paper one .)f' auLcioi-
bpc-cxre dednti-rated. @imtlng at -2f-;Q': of
'.na- PaSsIve Stat! actl-rat28 I@be lxcpr@L-11,lcu. Itc uaer-yeu
irpux-ities can be attributed to the dependence Of t.Le eolubility of th@a Lmpurl e4
Corc 1/ A ".

ACCESUOR NRt-
ir the spmlco-iductoT on the temperuture. The presence of such a dependencp
a us -.q the iMuritiea in the aemiconductor tc be in a metastable state i. a tezz.-
clirfeTent from the sAt- wb*11-h thi! tmuurities wnre i[!LI--odUce,
e,,-il ton centers aaa witn rae a:LivuzL,@u
-aT
--Ihili'v Ir. r3wor thar. th-Rt
Ir !r-. lie coagu-latirin centerg to the a" tte lnterkftices of the lattice, I"

he meau&@,-mmfiit Z. mit. -hafff - 4 figureir ane
4ng the n
p- --par a
4 fox-m-ulas.
A:7330rIATT0V- Inctytut napIvp7-cvIATWkA%- AN URSR, Kjj.,v
(InEtitute of 6mAcorductorE;, AV ArK-F@.)
KNC L, %M CODE - S8
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Cord 213

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jj AT
ACCI NR: @AP6009699 SOURCE CODEr UW0181/66/00@/00.3/0969/0971
AM"HORS., Ylinchuk,_X. D.; Litovchenko, N.: M.; Novikova. V. A.
ORG., Institute- of- Se;nic2nduqt9rgj3AX MUM. Klev (Institut-
poluprovodnikov'AN UkrSSR).
silicon
TITLE: Carzier capture in plastically dekormed
SOURCE: Fizika tve@dogo tela, v. 8, no. 3, 1966, 969-971
TOPIC TAGS: silicon, plastic deformation, carrier density, carrier.
@lifetime, electron capture, photoconductivity, crystal dislocation
phen.omenon
ABSTMACT: The authors measured the effects of plastic deformation of i
U
n- emd p-silicon at 850 -- 950C and found that it caused practically
no change in the density of the equilibrium carriers. The lifetimes
of the electrons and of the holen were determined by measuring the
the stationary intrinsic photoconductivity and the photomagnetic emf.
A comparison of data for the plastically deformed and nontrol samples.-.-,
shows that-deformation produces in both p- and n-silicon ca eure
p
Card

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_77
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_7
L 254,16-66--...
'@..-'.ACC RN APW9699
cente*11a with strongly differing cross sections for the captum! of
q." electrons and holes, so that the photoconductivity lifetime- Ifi the
deforned samples is different from that in the undeformed samples,
and the bipolarity of the photoconductivity is thus violated. At
T,@ 300K th4 deformed silicon exhtbits long-time components of photo-
!conductivity relaxation. If it iEi assumed that the observed changes
lin the lifetime for pbotoconductivity are connected with capture of
I'tbe carriers by the negatively cliarged dislocations, then the increasel
---rin the lifetime of the photoconductivity with decreasing temperature
.iin n allicon is connected with a decrease In the probability of over
coming the repulsion barrier by the electron. It is shown that the
assumpl'Adn that tbe-ebange in the lifetime is connected witb'darriers
by negatively charged dislocations contradicts the experimental data,
and.it-is,concluded-that deformation produces also positively charged
defects., e r-pointlike or-extended which cause the violation of-
ithe
the bigiolarity.of the.photoconducti@vijty in'p-type silicon. It is in-,
dicated that similar results were obser Ved in germanium. Orig. art.
has.,. I figurei.
.:'DATE: 04oct65/ _ORIG REP. 003/
SUB CODE
_OTH REF: 003
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I FM MR low
L 06447..67 Ewr(i)1EwT(MVEwP(t)/ETi ijp(c) JD/AT
1 ACC NR: AP6o __ -7-2'- -S O-U-R C -EC 0 D E_W6 1-8 i A61 6 w-0- 0 82 -5- -0- _/ -2 5- 1-1-
26
AUTHOR: Glinchuk, K. D.; Litovchenkoi N'. M.
OIRG: Institute of Semiconductors, AN UkrSSR, Kiev (Institut poluprovodniko@ IqNt
TITIS: Quenching of photoconductivity in silicon
SOURCE: Fizika tvordogo tela, v. 8, no. 8, 1966, 251G-2511
TOPIC TAGES: photoconductivityl zinc, silicon property
A_'-SWUM Quenchina of 73hotoco;@uctivjty (decrease In Intrinsic D7notoconductivity duo
to irradiAtion with extrinsic light) was observer) in silicon. The exi3erimants were
conducted a" 000K on samples containing zinc atoms. Stationary 11111,11nation of sili-
con with intrinsic light causes the aoDearance of nhotoconductivity (background cur-
rent). Turnina on of a constant extrl'nsic illllnin'atio-a decreases the bacR-round cur-
rent, I. e., quenches the Intrinsic Dhotoconductivity. If the sannole is lilitminated
vith modulated. Intrinsic light, turn-ini-, on of cons-tant, oxtrinsic Illum-ination docrnasl@
'
k.ho amplit tiade of the pulse, leaving its shape practically linaf foeted. If tho oxtrin-
.c light Is nodulated against a background of stationary intrinsic Munlnation@
turnIng on of this light leads to a slow decr,)ase, of thr@ background currenL; after the,
pulse of o-,ttrinvic light is turned on, tho rhotocurrant slowly r1c;0s to tho val-ar; of
the background clirrent. A rqodal of this quenching, rolated to th-3 multiply c'nargod
zinc atoins,, Is presented. The quenching kin6ticzj aro Iketerirdned by the concentration
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ACC W AP7003611
AUTHOR: Hlynchuk, K. D.-Glinchuk, K. 11.;
Lytovchenko, If. M.-Utovchenko, N.:,.L.,
SOURCE CODE:'-UR/01&5/66/011/012/1324/1331---]
Denysova, A. D.-Denisova, A. D.;
ORG: Institute of Semiconductors, AN URSRKiev (Instytut napivprovidnykiv AN URSR)
TITLE: Photoconductivity of silicon doped with Au and Zn
SOURCE: Ukrayins'kyy fizychnyy zhurnal, v. 11, no. 12, 1966, 1324-1331.
TOPIC TAGS photoconductivity, photoconductorV,
ABSTRACT: The intrinsic and impurity photoconductivity of p- and n-type silicon
doped with Av and Zn was investigated in the 90---!300*K temperature range. The
impurities were introduced by the diffusion method at 1200*C; impurity concentration
was in the 101'5--1017 range. The photoconductivity spectrum at low temperatures
(T - 90*K) depended on the introduced impurities, but at high temperatures (300*K)
thermal centers formed during high -temperature annealing determine photoconductivity.
In compensated n-Si + Zn, quenching of intrinsic photoconductivity was observed. Thial
quenching is cA)nnected with exchange of the Zn atom charge tinder light action.
grig. art. has : 3 figures and 1 formula. (Jpj
004( 04)(0
SUB CODE: 20/ SUBM DATE: 28Feb66/ ORIG REF:-"S/ OTH IAEF: 04W
-Card-- UDC.:_ --none

FPZYDLIN, G.N.; LITOVCHEUKO N N.
Imparting water repellent properties to poly-Anyl alcohol with
beta-naphthalenewilfonic acid. Khim.vo'Lok. rio.2:15-18 163.
(141RA 16, 5)
1. Lisichanskiy filial Gosudarstvennogo naucbno-issledovatels1cogo
i proyektnogo Inatituta a7otnoy promy8hlennost'i i produktqv
organicheskogo sinteza.
(Vinyl alcohol polymers)
(Naphthalenesulfo-nic acid)

LITCfVCEENND V. (Veterinary Doctor of Veterinary Eospital, Bazaliya Settlement,
l1nitsa, CFblastl, Ukranian SSR). (Abstracted by YOSMV, A. I.)
"Mmnmity and treatment of hexpes tonBurans I......
Veterinariya: iral- 39., no. 3. March 1962 pp. 22

LITOVC@ Nikita Vasillyevich; BAMINOV, Boris Patrovich; POLUKHIN,
"4
"F.i' , r@rakVb'F-,-rAL6V,N-'.A.. redaktor; ATTOPOVIGH, H.K., takhal-
che;kl)r redaktor
[Rolling racurrent steel sections for fittings] Prokatka peri-
odicheskikim proftlei arm turnot. stali. Moskva, Gos.nauchno-
tekhn. izd.-Yo lit-ry po chernoi i tevetnoi metallurgii, 1955. h6 p.
(Rolling (Metalwork)) OGRA 9:3)

LI @@M - .-MULA-11 111yevich; SIMIN, V.S., redaktor; VAUN, N.A.,
- red .-Te.G.. tekhnichashy redaktor.
(Hot rolling of' thick and sedium @hostel Goriachaia prokatka tolatykh
I eradnikh listow. Kooky&, Goo.nauchno-tekhn. isd-vo lit-ry po chernol
i tsvetnoi metealurgit, 1955. 170 P. (MA 9:1)
(Rolling (Notalwork))

:4XTQVgAjA[Q,jNXkIt& 'Faaillyerich; NOSALI. V.V.. redaktor; GOLYATKIRA, A.G..
redaktor izdabellstva; AIR OV, A.P., takhnicheakiy redaktor
[Intensive cogging in blooming mills) Primenenis vysoklkh obzhatil
us blustagath., Moskva, Gose nauchno-tokha. isd-ye, lit-ry po chernoi
tayetuoi ustallurrfi. 1956. 67 P. (NLRA 9:10)
(Rolling aLlIs)

LITOVCHMNKO, N.V., inzhener-kalibrovshchik.
0@-
Rolle for corragated reinforcement rolling. Ketallurg no.5:
17-19 MY '56, (Kw 9;9)
l.Magnitogorsk:Ly metallurgicheekiy kombinat.
(Rolle (Iron mills))

SOV/ 137-58-9-18965
Translation from: Referativnyy zhurnal, Metallurgiya, .1958, Nr 9, p 116 (USSR)
AUTHOR: Litovc
TIT.Jaie?'6' Extreme Drafts in the Rolling Mills of the Magnitogorsk Metal-
lurgical Kombinat (Primeneniye predelInykh obzhatiy na pro-
katnykh stanakh MMK)
PERIODICAL: Tr. Nauchno-tekhn. o-va chernoy metallurgii. Ukr. resp.
pravl., 1.957, Vol Z, pp 92-104
ABSTRACT: A discussion is presented of trends in increasing the output
of blooming, billet, and merchant mills, and the desirabiliEY
of using ext@reme drafts on these mills. An increase in rate of
output was attained at the Magnitogorsk Metallurgical Kombinat
blooming mill by the employment of elevated speeds and the
greatest possible drafts. However, the use of extreme drafts
and forced feed is undesirable, as this requires special mech-
anisms which crowd the working area on t,oth sides of the mill.
In order for extreme drafts to be practical on continuous billet
mills, detailed theoretical and experimental investigations of
the control of a continuous mill, with allowance for forward
Card 1/2 slip and lag under conditions of forced feed of strip,, are

SOV/ 137-58-9-18965
Extreme Drafts in the Rolling I'Aills of the Magnitogoriik (cont.)
required. The use of drafts higher than "maximum" mdth forced feed may be
justified only if the billet mill is a bottleneck in the array of rolling mills and
if such drafts will provide a considerable rise in rate of output. Moderate
drafts that will assure reliable bite and a stable process procedure should
be used in merchant mills.
S. G.
1. Rolling mills--Performance 2. Rolling mills--Control system
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137-58-4-7038
Translation from: Referativnyy zhurnal, Metallurgiya, 1958, Nr 4, p 105 (USSR)
AUTHORS: Litovchenko, N. V. , Diomidov, B. B.
TITLE: A New Edging ]Fixture for Continuous Roll@ng Mills (Novaya kan-
tuyushchaya armatura dlya stanov ..nepreryvnoy prokatki)
PERIODICAL: Sb. tr. Mosk. vech. metallurg. in-t, 1'357, Nr 2, pp 102-115
ABSTRACT: To a:5sure a high-quality surface for the- finished rolled metal,
which to a considerable degree depends upon the entering and de-
livering guides (EDG), it is necessary to cmploy rolling EDG.
This also makes for a high rate of output 1:-y the mills. Rolling
EDG are quite applicable for use in continuous billet and multiple
mills. Inasmuch as the effect of the EDG on the quality of the
product is greatly increased as its profile diminishes, the rough-
ing and intermediate groups of stands of continuous wire and
merchant mills should be equipped with rolling manipulators as
a matter of course. Specific recommendations on the installa-
tion of rolling turning guides on multiple, continuous -billet, and
other mills are presented.
Card 1/1 1. Rolling mills--Device--Applications V. D.

Aj
137-1958-3-5028
Translation from: Referativnyy zhurnal, Metallurgiya, 1953, Nr 3, p 8@ (USSR)
AUTHORS: Zlatoustovskiy, D. IA., Litovch en ko, N.-V.., Ivantsov, G. 1.
TITLE: Improving the Durability of the Rolls in the Finishing Stands of
a Rod-rolling Mill (Povysheniye stoirkosti valkov otdelochnykh
kletey provolochnollo stana)
PERIODICAL: Sb. nauchn. tr. Magnitogorskiy gornomet,--,Ilurg. in-t, 1957,
Nr 11, pp 296-312
ABSTRACT: The employment of rotating calibrating ro@lers increases the
durability of reduction rollers in a finishing stand; this in turn
reduces the amount of passes from one caliber (G) to another
and increases the productivity of the mill even further. The
calibrating rollers center the ellipse along a vertical sense,
while the reduction in the C's of the rollers .,-orrects the crobs-
sectional symmetry of the ellipse with respect to its major axes
and improves its durability during deformati,:)n in the finishing
C. The employment of calibrating rollers reduces the amcunt
of sources responsible for surface flaws of the rolled rod stock.
B. Ye.
Card 1/1

25(l) PHASE I BOOK EXPLOITATION SOV/1269
Litovehenko Nikita VAM10:@evich and Diomidov, Boris Borlsovich
Povysheniye proizvoditel! nostl prokatnykh stanov (Increasing the
Productivity of Rolling Mills) Moscow, Meta'.1jurgizdat, 1958.
178 P- 5oOOO copies printed.
Ed.: Manakin, N.V.; Ed. of Publishing House: Golyatkina, A.G.;
Tech.-Ed.: Bekker, O.G.
PURPOSE: This book is intended for engineers and technicians and
also may be useful to students of metillurgical and mechanical
engineering at secondary and higher institutions of specialized
education.
COVERAdEi The book gives an account of experience gained In the
operation of rolling mills at metallurgical eE,tablishments where
in recent years considerable modernization has been carried out
and a number of improvements have been made in the specialization
and organization of work operations performed on the rolling
equipment. No personalities are mentioned. @Ihere are 9 Soviet
references,
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Increasing ther Productivity of Rolling Mills SOV/1269
Introduction @-. 5
Ch..l. Blooming and Billet Mills 7
Effect of ingot'weight on blooming-mill products 7
Heating rates of ingots before rolling 15
Dependence of,blooming-mill productivity on the operation of
the saaking-pit equipment 28
Operating intensity 1productivity) of a single-stand blooming
mill I . 30
Pass design of the blooming-mill rolls 40
In6tallation, of additional stands on blooming mills and
distribution of the reduction among them 43
Billet mills 51
Cenolvaions. 57
Ch. 2. Structural land Merchant Bar) Mills
Preparation of the billet
Heating of the billet
59
59
6o
Card 2/4

Increasing the Productivity of Rolling Mills SOV11269
Conclusions 163
Ch. 4. Automation of Rolling Mills 165
Automation of a bloomIng mill 165
Automation of structural mill 500 170
Automation of merchant bar mill 300 for medium sections 172
Automation of continuous mill 300 174
Automation of merchant bar mill 250 for small sections 176
Automation of continuous wire [rod] mill 250 118
AVAIL-ABLE: Library of Congress
GO/ksv
3-20-59
178
C@trd 4/4

SOV/1 37- 58-11-22412D
Translation from: Referativnyy zhurnal. Metalturgiya, 1958, Nr 11, p 82 (USSR)
AUTHOR: Litovchenko, N. V.
TITLE: An Investigation of the Process of Rolling Deformed Concrete-
reinforcement Bars (Issledovaniye protsessa prokatki periodi-
cheskikh profiley armaturnoy stali)
PERIODICAL: Author's dissertation for the degree of Candidate of Technical
Sciences, presented to the Mosk. in-t stali (Moscow Steel Institute),
Moscow, 1958
ABSTRACT: An examinatior is made of questions having to do with the purpose,
origins, and development of reinforcing-bar steel shapes (RS). An
analysis is presented of high-speed conditions in the process of
rolling reinforcement shapes, and data illustrating the major practical
significance of 1. M. Pavlov1 s theory of "rigid ends" are presented,
Proceeding from the timiting conditions of contact, the author defines
the ratio between the diameter, d, of the RS being rolled and the
rolling diameter of the rolls: D:d/D