SCIENTIFIC ABSTRACT LYASHENKO, V.I. - LYASHKEVICH, Z.M.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001031110007-7
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: August 31, 2001
• Sequence Number: 7
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

5/181/62/004/008/001/041
Adhesion of non-equilibrium carriers ... B125/B104
with illumination it is
Ta.
no
I
1 1- exp (EI, - Y, - UH)
(C,,vn,)-l f-I
T 412 el"
The notations are obviously,taken-from W. Shockley, W. Read. PhDs. Rev.,
87, 835, 1952. There are 4 figures.
A'SSOCIATIO'N: Institut poluproyodnikov, Ail USSR Kiyev (Institute of
Semiconductors AS.UkrSSR, Kiyev)
SUBMITTED: December 25, 1961
Card 3/3

4L. 1'r
S/181/62/004/010/045/063
-2 -2
B102/B112
AUTHORS- Primachenko, V. Ye., Litovchenko, V. G., Lyashenko, V. I.,
and Snitko, 0. V.
TITLE: MinoA ty carrier adhesion on,the silic~bn surface
PERIODICAL: Fizika tverdogo tel4, v. 4, no. 10, 1962, 2925-2930
TEXT: This paper is aimed to show that under certain conditions a
charge accumulation may occur on the silicon surface and that the
bipolarity On - 8p) may be disturbed. This is, however, contradictory
to the observations made by other authors (see e.g. Phys.Rev.101, 12729
1956; Semic.Surf.Phys.,85,1957). The disturbance of bipolarity of the
intrinsic photoconductivity obsqrved is attrAu ited to minority carriers
accumulating on fast surface lelels. The same method of investigation
was used as described in previous papers (FTT 1,980,1959; FTT 2, 591,
1960; UM,5,345,1960). The specimens were'n-type Si single crystal
platelets 200-400A thick with resistivities of 30 - 200 ohm-cm and volume
lifetimes of rvIO00gaec, the surfaces of which had been etched with CP-8.
In germanium the bipolarity-c~f the surface photocurrent may be disturbed
Card 1/3

S/18 62/004/010/045/063
Minority carrier adhesion on'... IB102YB1 12
i only at low temperatures, but. in etched silicon it may be disturbed even
at room temperature, This is proved (1) by the,nature of the photo-
conductivity relaxation of thin samples if the oscillogram shows tso
exponents with Yidely differing time constants;..(2) by the constant Tsh
of the short-term photocurrent component being inversely proportional
to the electric field applied, whereas the constarit of the long-term
component is independent of 'it; (3) by the fact that the long-term
component can be caused to vanish by the usual method of trap filling;
(4) by the long-term component increasing as-the temperature decreases,
while the short-term component decreases and alT_-ost vanishes completely,
this being related to the intensified charge accumulation; in both cases
In-r - f(I/T) follows a liiPar nnur-e4 (5) by the results obtained in a
study of the kinetics of the field effect also indicating a disturbance
of bipolarity. This bipolari.'- td also indicated by the field dependence
of -r sh and r1and (7) it is particularly pronounced in samples kept on
air for a longer period of time after they had been etched. (8) Experiments
on the condenser photo-emf proved that the disturbance of the photocurrent
bipolarity of Si is related to a change'.in the surface charge. Such a
Card 2/3

8/181/62/004/010/045/063
minority carrier adhesion on ... B102/B112
disturbance occurs when Cn exp ~Etv- An