SCIENTIFIC ABSTRACT MASHOVETS, S. - MASHOVETS, V.P.

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• Collection: Scientific Abstracts
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• Release Decision: RIF
• Original Classification: S
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• Document Creation Date: November 2, 2016
• Document Release Date: July 12, 2001
• Sequence Number: 9
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

MAMOV, S., instruktor-aviamodelint (g.Roakwa); POCHIPAYN, V., chempion
Noskvy po kordovym skorostzWm modelyam (g.Noilkwa); WASWMS, S.,
kruhkvwets prodskogo lbom piozwov (gmokwa);
prodskocc Dow ploseraw (golbakwa)
P"pu-Ing for imm compotitlons. Mryl.rod, 11 no*11:3 N 160e
(KM& 13: 10)
(YAscom- LbTlan"-41odsls)

USM/Physics Supercon~uctors
mra 15-3'- 2/19
Author XMbovets, T. V.;
___.wwwPwwww"w__
Title : OT'nuence of heat
in geramnium (the
ment)
FD-3127
Ryvkin, S. M.
treatment upon lifetime of non-ground current carriers
Itinetics of the formation of defects during beat treat-
Periodical : Zbur. tekh. fiz., 25, No 9 (September), 1955, 1530-1543
Abstract : The authors investigated the influence of beat treatment at relative
"lov" temperatures (4W-5500C) upon the lifetime of non-ground current
carriers in germanium. The lifetime decreases vith increase of tempera-
ture and duration of the heat treatment, vhich is explained by the oc-
currence of defects that play the role of centers of recombination. On
the basis of a study of the kinetics governing the process of the occur-
rence the authors obtain data an their energy structure. They shov that
the process governing the occurrence of defects in the investigated re-
gion of temperatures differs from the process governing the occurrence
of "thermal defects" ordinarily appearing in germanium at higher tempera-
tures. The authors' aim has been to investigate the occurrence dur-1-ng
heat treatment of so called thermal traps (recombina lon centers) and
also the nature (i.e. energy structure) of defects associated with these

Card 2/2 FD-31-27
traps. They tbank D. N. Nasledov for his interest and also V. M. Tucb-
kevich and A. A. Lebedev for preparation of specimens for measurement.
Fourteen references, mostly Western.
Institution : --
Submitted : February 28, 1955

MASHOVETS, T. V.
MASHOVETS, T. V,; "The effect of liot workinE on tlie life expectancy
of non-basic current carriers in Zermanim.0 Acad Sci USSR.
laningrad Physicotechnical Inst. Leningrad, rS36.
(Dissertation for the Degree of Candidate in Physicomathernatical
Sciences.)
SO: Knizhnava Latonis', No. 26, 1-956

ARM MAINUMg Tj P sea* 2118
t=292 &TV=
TUM On Via W&SWO of a Centers evallod. in Germanium on the
Oveastaft of Heat "W"b at SLOW. Tompiraburess (0 Wireft WMftM
rokombimstaii,. vossikeyvahchikh v gormadi pri InisketemperaturneyO
MIMMA Mwnal TeJ&nMs*# 1957, Tel 27, Mr 2. pp 23&4U 0.3.84.)
26410IT" 3/195? M 3A957
Fivet ratereme is oak to the vathere I vork in Zhurn.Teftz.flse 1 1955,
TOL 250 V 1530 ad LAW resulto are sammorised. It was found that the
Proce6bas of WO spe"ift of thwaidefool" In GUMNAM SUKU the 1rWv
what (the admixtures or with structural defects) the low temperature
thermoconters of recombination investigated by the authors are connected*
To find this out vu the, task of the present work. Ab6ve all it was
rammsery to determine %be position of the Inels of the low tomperaturs
tbormocentere of recombination in the onargetioal scheme of gnualdua.
IMs was accomplish" by investigating tbo'dopeadence of life an Uspera-
two. It mW be concluded that the defootop with which the low toppera-
two rpoombinstion centers we connect", -we copper aboms. fte connection
betwoeu the defects abd the -copper aboms was checked in the course of a
funho series. Results obtained for- twe'samples are shown in farm of a
$014 Sumiurys 1) The low -temperature thermocenta of recombination
vbiih are created An coaseqnsnee of heaUng at 450 - 5509C and of a sub-
seqnent har4oning, we connected with a copper-lead admixture.
Card l/

PA - 2118
On the'lIatum of Recombination Centers created in Ownanium on the
Oscasion of-Host, Treatment ab OLor TsmWebures".
2) In view of the fact that the recombination conters we uniformly dis-
tributed within the entire volume of Me sample, it nut be assumed that
a gro*bb of their concentration with temperature is due to Me change of
the solubility of copper and not to their diffusion from outside.
3) The senter-forming energy Uocz 1.5 ev, which is determined by the do-
pandeme of'the steadr concentrations of the recombination centers on
Umperaturs, in an activation energy for the solution process of the
copper, 4) The modification process of the solubility of copper is do-'
termined by other and minor time constants than the process of copper
diffusion,b 5) The U~= 2.0 sTand Uing 3.5 eV determined in t" Drovious
Phurn-Tokhft-fts-1955, Vol 25, p 1530) work characterize the position of
the copper ston in germanium in the"otate of a solid solution (Ug) and
outside the solution (U1). It Is, by the war, possible that the afore-
mentioned energies characterise just the germanium atco in the'internode
space AM in the node, if it is assumed that, for the formtion of a re-
combination ednter, the copper atom mxat occupy a place in the node in-
stead the germanium. (1 illustration)
AMZATM Npical-Tochnictl Inotttuto of Oo Ae&GW of 3cience of the UM,
MOMM Hr Leningrad.
ON- TV a 4" 10. 1956
ATAILAM Library of Congress.
Card 2A

AUTRORs Kashovets, T. V. 57-28-6-2/34
1
T1TLZj
On Recombination on Three Levels of Copper Atoms
In Germanius In Consideration of the Statistics of
Their Being Filled With Mloctrons (0 rokombinataii
na trekh uroynyakh stomov medi v gormanii a uchetom
statiatiki ikh sapolnoniya slektronani)
PMODICALs Zhurnal Tekhnicheskoy Fiziki, 1958, Vol. 28, Nr 6,
Pp. 1140-1150 (USSR)
ABSTROTt A"t present two methods of purifying Germanium from
copper by means of thermal treatment are known:
1) By heating the germanium in the presence of some
elements in which the solubility of copper in greater
than in germanium (Sn, Pb, Au) (references 2 and 3)-
2) by heating by the passage of a current through the
germanium sample. In this case the copper is
electrolytically removed into the electrodes (references
4 and 5). In the present paper the author experimentally
investigated the influence exercised by "ordinary,, thermal
Card 1/4 treatment upon recombination. &-maryt 1) On the basis of

On-Reoombination on Three Levels of Gopper Atoms 57-28-6-2/34
in Germanium in Consideration of the Statistics of
Their Being Filled With Electrons
assuming a reciprocal successive filling up of the 3
acceptor levels of the copper admixture in germanium the
dependence of the position of the Fermi level IL and of
the specific resistance Y on the concentration of copper
Na was calculated for a donor concentration of Sd a
= 5 - 10130M-3. 2) It is assumed that the influence
exercised by the thermal treatment of germanium under
musual" condi-21-lions is reduced to the increase of the
concentration of the substituting copper atoms- 3) It
was shown that by comparing the theoretical and experisental
dependences ofr = IN.) 6 capture cross sections (3 for
electrons and 3 for holes) can in principle be determined
an the 3 levels of the copper atoms. As, however, the
contribution made by level I towards recombination is
suall com W 9d to that made by levels IT and III, it is
found to be possible In practice to determine 4 capture
Card 2/4 cross sections kfor the levels 11 and III). The best

un Recombination an Three Levels of Copper Atoms 57-28-6-2/34
in Germanium in Uansideration of the statistics of
Their Being Filled With klectrons
aiMeement botweem calculated and experimental dependence
- (Na) exists in, the case of the following values of
capture cross sections: A n2 = Ito . 10-17 cm2, An3
= 3,6 10 -17 an2, Ap2 - i's . 10-16 an 2, AP3
16 2
m 3,6 10- Om ,The main contribution in made up to
A
concentrations of Me M 10140M-3 by levels III, whereas
in the case of higher concentrations 't recombination
on the levels II begins to predominates, 4) Besides, the
utmost limit of the cross section values of electron
capture can be evaluated by level 1, which in found to
amount to 10,45. Thus it is possible that, in spite of the
small contribution towards recotbination made by level I
within this domain, there in no considerable difference
in the orders of magnitude of the capture cross section.
Card 3/4 5) The calculation method employed in this paper can be

on Recombination on, Three Levels of Qopper Atoms 57-e?8-.6-2/34
in Germanium in Uonsideration of the Statistics of
Their being Filled With rlectrono
ASSOCUTIONS
SUBMINDs
used for any admixtur* provided that each individual &*am
substituting the germanium atom. In the lattice forms
several levels In the forbidden zone. The author thanks
S. N. Ryvkin and V. Yo. Xhsrtsi3#ev for their valuable
advice and 1. Shcherbakov& for bar assistance in carrying
out calculations. There are 5 figures, 3 tablesand 11
references, 5 of which are Soviet.
Leningradskiy fiziko-tekhn1ch*skiy inatitutAN SSSR
(Leningrad Physical-Teohnioal InstitutookS USSR)
October 29, 1957
1, Genwai=b-Purifleation 2. Copper-Separation
3* Zlectrodes-Perfofmnoo 4. Electron captur*
5. Matbenatics
Card 4/4

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Oij
Jj
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all

7 0 0 67393
040), "44) SOT/181_1_9_11/-~i
AUTHORS$ vitovskq. T, T-o Ryvkin, S. M.
T1TLZ# Determination of the Number of Acceptor Levels of Defects
Occurring in Germanium/Under the Action of Gamma Irradiation
PBRIODICALs Fisika tverdogo tela, 1959, Vol 1, Nr 9, pp 1581 - 'if-,
ABSTRACT: The radiation-induced formation of structural defects stable
at room temperature had already 1tcszn investigated several
times, but not all the problems related therewith are as yet
solved satisfactorily. The present paper offers a contribut-
ion by discussing the possibilities of a complete analysis of
the energy ~qrels of the defects and by publishing experimental
re6idto.concerning th.e,temperature dependence of g8e Hall
coiffidien-t R.of n-t* germanium irradiated by Cc -~'-rays.
An analysis of these results permits a precise determination
of the number of acceptor levels belonging to one e -radiative
defect. To investigat& the temperature dependence of the
catrier concentration in the presence of multiple-charged
centers, the authors theoretically investigated a level scheme
of & defect (Fig 1), with n in the conduction band considered
Card 1/3 to be composed of four parts (Fig 2a). In this connection the

67393
Determination of the Number of Acceptor Levels of SOV/181-1-9-11/31
Defects Occurring In Germanium Under the Action of Gamma. Irradiation
following was assumed: every defect produced by radiation has
1 acceptor- and k donor levels; "ordinary" donors (atouls of
the V group) and k defects exist in such a way in germanium
with the concentration N d' that Na > MI. nj : n rises weakly
in oonsequence of transitions of electrons from donor levels
to the conduction band; n2s full ionization of the donor
levels, n2 a Xd_Kl R3 : stronger rising of n in consequence of
transitions of electrons from higher defeat levels to the can-
duction band n . V1 - I.e -At X1 /2kT n s full Ionization of the
3 c 4
upper levels, n 40 Nd- 9(1-1). The temperature dependence of n
can thus be represented by the function Ig n m f( (theoretic-
ally in Fig 2a, experimentally in 2b). A table given the re-
sults of several measuring series. It Is found that for
pladuced defects 1 - 4, with,891, I being 0.18 ev. The defect
Card 2/3 formation cross section was found to be 6~` 4.0-10'27cm 24 11

67393
Detemination of the NvAber of Acceptor Levels of Defects SOV1181-1-9-1-ii-I
Occurring In Germaniua Under the Action of Gaama Irradiation
Directives for further investigations are briefly shown.
Finally, the authors thank B. M. Konovaleako and I.D.raroshets-
--XIL for exposure of the sanples and 30. X. Mirlonselkylli for
his assistance In seasurements. There are 2 figuree, I table,
and 3 references, I of which is Soviet.
ASSOCILTIONs L*nlngradekly fialka-tekhnicheskiy institut AN SSSR (Leningr&G
Institute of Physics and Technology f t"
SUBMITTED: March 24, 1959
Card 3/3

VITOVSKU, N.A.; MASHOVETS, T.V.; RYVKIII, S.M.1 SONDAYEVSKIT, V.P.
Suargy spectrum of defects &rising In Go under the effect of paw
radlation. Fis. tvar. tola 3 no. 3s996-IMI Mr 161.
("talm-Defects) (Gawaiva) (G~ rays) (KIPA 14S 5)

AUTHOR: Mashovets, T. V.
3/058/6Z/000/006/083/136
A057/A101
TTTLEs Investigation of the recombination process in thermocenters in
germanium
PERIODICALt Referativnyy zhurnal, Fizika, no. 6, 1962, 28, abstract 6E233
(In collection.- "Fotoelektr. i optich. yavleniya v poluprovodnikaktf,
Kiyev, AN USSR, 1959, 138 - 140)
TUT: A calculation method of the dependence of the position of the Fermi
level aiA of the basic parameters of Ge upon the concentration (Na) of the sub-
stituting Cu admixture is presented under consideration of the presence of
multiplg-charged Cu levels. It is demonstrated how can the theoretical dependence
of the Permi level position and specific resistance upon % be calculated. A
method to described for the determination of 6 recombination cross sections
(3 for electrons and 3 for holes) on three Cu levels, which is necessary to ob-
tain the theoretical dependence of the life time (1r) on Ns. According to data
obtained by thermal treatment the dependence of'C upon Na was determined ex-
Card 112

Investigation of the...
S10581&VOOO10061083,1136
A057/A101
perimentally. The comparison of calculated and experimental curves allowed'the
determination of 4 recombination cross sections related to two upper Cu levels
(the contribution of the lower levels to the recombination is negligibly small).
Tfte presented method can be used for any substituting admixture with several
levels.
F. Nad'
[Abstract~rls note: Complete translation]
JV
Card 212

36486
S/lelj62/004/003/041/045
B101/B102
AUTHORS: fitovskiy, N. A., Lukirskiy, D. P., Mashovets, T. V., and
Byrkin, S. M.
TITLE: Eiergy spectrum of some impurity atoms in germanium and
s1licon
PERIODICAL: FJzika tverdogo tela, v. 4, no. 3, 19629 616 - 818
TEXT: In a privious paper (FTT, 1, 1381, 1959) the authors suggested a
method of deturmining the total nlu_~ber of acceptor (or donor) levels
pertaining to one structural defect and lying in the forbidden band of a
emiconductor. The method consists in measuring the temperature dependence
of the Hall c3notant in specimens with known ratio of the concentration
of the "orditary" carriers (of the elements of the groups III and IFY to
the defect concentration. Such measurements were made in gold-doped
n-type Gev capper-doped n-type Ge, and gold-doped p- and n-type Si.
Specimens v,.th known impurity concentrations are obtained by diffusion.
In the msaiarement, the concentration N of the atoms added must be such
that U14 V,, or Vk< Na, where 1 is the number of the acceptor levels, k
Card 14

S/18 62/004/003/041/045
Eneysy spectrum of some... B101~B102
tl,j number of the donor levels, Nd9 Na are the concentrations of the
,ordinary" donors or acceptors, respectively. The results (Fig. 1) which
show a concentration n0 of the ordinary donors prior to doping which
corresponds to complete ionization, and n 2 after doping-indicate that at
liquid-nitrogen temperature filling of the ordinary donors (V-group
elements) sets in. The concentration which increases with temperature
(Im and II6)'corresponds to the ionization of the uppermost level of the-
impurity atom and the concentration n (Fig. 1) to the complete emptying
of this level. The relation 1 - (n n )/(n, - n e is 3-1;
2 2) for Cu in 0
for Au in Go (2 specimens) I - 2.8 and 1 - 3.1. With n-type and p-typ e 0
Si the curves I and II coincide at high temperatures (approximately 500 K)
from which it follows that in silicon gold forms one acceptor level
(1 - 1) and one donor level (k - 1). The calculated activation energies
for the upper acceptor levels of Cu and Au in Go, and the acceptor and
donor levels of Au in Si agree with published data. There are 2 figures
and 5 references; 2 Soviet and 3 non-Soviet. The three references to
English-language publications read as follows: H. ff. Woodbury a. W. W.
Card 2/4

S/l6lj62/004/003/041/045
Energy spectrum of some... BIOIJBI02
Tyler, Phys. Rev.t M9 84, 19571 R. Newmant Phys. Rev.9 2A9 278, 9541 1
C. B. Collins# R. 0. Carlsong a. Gallagher, Phys. Rev*# 105, 11689 1957-"
. .I f
ASSOCIATIONs Fiziko-tekhnicheekiy institut im. A. Fe loffe AN SSSRq I
Leningrad (PhysicoteaRnical Institute imeni A:. F. loft*
of the AS USSR, Leningrad)
SUBMITTED: December 30, 1961
Fig. 1. Temperature dependence of the carrier concentration in
germanium. (a) doped with Ou; doped with Au.
Cam 3/4

VITOVSKITs N.A.; LUKIRSKIT,, D.P.; MASHOVETS, T.V.,' MMOU, V.I.
Sinergy spectrta of defects in silicon caused b7 electron
0 Fis. War. tela 4 no.5:1240-1145 My 162o
(MIRA .15; 5)
1, Fisiko-toWmichashy Institut imeal A.Y. Joffe AN
WSR, lardWed.
(Silicon er7stals-4Defects)
(Radiation)

44144
8/14IJ62/004/010/032/063
B108/5104
AUTHORS: Vitovskiy, N. A., Mashovete T land Ryvkin, S. M.
TITLZ: The energy spectrum of the Camms, radiation defects In
silicon
PERIODICAL: Fialks. tvordogo t*la, v. 4, no- 10, 1962, 2845-2648
TEXT: The temperature dependence of the Hall constant was studi94 on n-
and p-type silicon samples before and after2 their exposure to Cow gamma
radiation. Irradiation (1-4-jo17 quanta/as 1 1.15-1018 quanta/cm2),,..,*.,
reduced the conductivity of silicon. The measurements carried out in the
range 55-45001 sh9wed,that irradiation give* rise to two levels in the upper
half of the forbidden bond that are cipsblo. Of'socepting electrons:
Ec - 0.18 ey and No - 095 evo The production crose-sections of these levels
are approximately 1.4-10- 26 0122 and 1.8-100'27 8132 . respectively. In the
lower half of the forbidden band there was _4 (Z + 0.23-ey) with
me lov4
a production cross-section of-about 162010 =20 Thevre are 2 figures
and 2 tables.
Card 1/2

S/181/62/004/010/032/063
The.energy soectrum of the BIOS/BI04
ASSOCIATION: Piaiko-tekhniefialkiy institut im. A, F. Ioffe AN SSSR,
Leningrad (Physicotechnical Institute ineni A. P. Ioff*
AS USSR, Leningrid)
r
SUBMITTED; May 30, 1962
Card 2/2

2/18IJ62/004/010/033/063
1102/2112
AUTHORSs Vitovskiy, N. A., Mashov*tsg T .9 and Ryvkin, S. V.
TITLEs Determination of the activation onefty of impurity center
levels and of structural defooto in semiconductors
P19RIODICALs Fisika tvordogo tola, T. 4, no. 10, 1962, 2849 - 2853
TEXTs A study was made of the temperature dependence of the carrier con-
centration in semiconductor* with impurities and Woots, the spectra of
which are complicated by their being several types of levels. Aocor*ft to
measurement* log a a f(I/T) log In this oases.& complicated curve con- i,
priming plateaus of different lengths and-sootions with different inclinal:
tions . The activation energy of all possible levels to calculated to obtain
a quantitativ* theoretical description. For simplicity a semiconductor iir
considered having two levels In the forbidden bond. At absolute zero oneir
of them should be partially filled with sl9otromej and the other should be
filled completely (Fig. 2). The results can tkom be goneralised for an
arbitrary number of levels.- If# in the entire temperature range the rela-
tion As 2 'hxj.)~kf Is valid where AZIare the lWel activation energies,
Card 1/4

S/14IJ62/004/010/033/063
Determination of the... B102/6112
thou the neutrality oondltiin of the system can given by
M.
Age"
N, EV 9
MI
the solutioi to
2
N,4 Nj~
The curve log n f(Il?) is divid*d into 6 sections (2 plateaus, 2 sloping
and 2 transition sections), n.is calculated for seah section and the state
density is studied, with the.sid of
AE diem 23. 3 kT. (9)
L~i
Card 2/4 64~r~ in

-Determination of the...
IN"I/41/004/010/055/065
2"2/2112
AS2 can be determined experimentally from the high-temp*raturo inclin*d
section, If a I and (N2+al) In the point t2 NON2 a aI Is determined from
7jNer. = Y(m, NJ=, (7)
and d(log n)/6(1/T) is determined from tho curve'. The statistical weiShts
VI/92 of the levels need not be known but ri can be calculated from (7).
These relations ere valid If N20 ale If "s, Shea the activation eamW
can be calculated directly from the inolinstion of the curve with the aid
of
digs
T T
This Is calculated for a practical case* Pinallb.:& further possibility Is
pointed out*of calculating 692 from the tempersftr6 dependence of the
carrier density# the o",be constructed and the
V 10
Card 3/4

si(IGIJ62/004/010/033/063
Dotermination of the... 71 D102fDM
tangent whose Inclination giwdb the activation em:tgy directly can be drawn
at the point corresponding to kq. (7). P donates the effective state
density in the conduction band, 91 are the level ooncontratione and ai to
the election concentration on 'the M level. Theite par@ 3 figures.
ASSOCIATIONs Flatka-tekkn1cheskiy institQt in. A. F. laffe AN SSSR, Lenin-
grad (Phystactochnicel Institute imenj A. F. Ioffe AS USSR,
Leningrad)
SUBMITTIPS USY 309 1962
Fig. 2
card 4/4

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~: ~ 11 .. -~ ~, ~. E- ~" ., - II -. . . . I- . I .. t-,~ I
-:T,5~s-!~~.
M"l-qD7-7T"F-;T,rl`i,!.- ~', L- - -4; -- - , .- t ~-- - - - I-.
~.-: ~ .- -~2- ~ ~.-
. ~ ~TgT~-41K9~ . . -

VITOVSKIY, N.A.; MASHOVETS, T.V.; RYVKIN, S.M.; KHASEVAROV, R.Yu.
Change of the electric and photoelectric properties of gallium arsenide
irradiatod by-I Vbv. electrons. Fiz. tver. tela 5 no.12:3510-3523 1)163.
- (KRA 17t2)
1. Fiziko-t*kWch*skjy institut imeni A.F.Ioffe AN SSSR, Loningrad.

MR-WM-N VIKM~7--
PIA,
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oyla
0
Pentratlolls Agaiwpi), of 4~UO13 aw 2 elc~4 'vx-3 reapectively, Annwl IrAs donee
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00p 120i 900.* and 10 , Each. 5-8-ribs' included namplea ir-
The, authors ah
4i ow,
~,t -,diffeidnt. doses of gama ra" fron
of I&-tempomture ant-wallig in- saWles irractiated- at rommm
ithat *e, hasic h
-texperatum -U kpolaj am*aling of the d.)wr and accept*r compone6a of the gama-
OU shoun W a th own
Tbel,~ active ti ans%%y of annealim w" 4 b
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tamperattus onnealing in gaam-irradiated germaniumy two now levela are formedt an
-0 013 im and an. E~ *0*22 evo These indicate a reorganization of the radiation
zfec~,Zp divoirc annliaiiilg~ avithors tha,nk -1, e student at
G-thershrova. graduat
LGU, for making a number of measurematsew OriR_. arte bast 6 figures, 4 tablesp
and I fo2mmilao
I-MOCUMM Fizi6~~ 'a k- institut. AN SSSHj LdnIbgM lootechnical
Irmt-i-tuteJAN AL_
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A'U'~]-IGR: Masbovets, T. V. ; Khansevarov, R. Yu.
GiNG: Pl~,rs- M=i1joL7fn~titute im. A. F. loffe, AN SSSHj Leningrad (Fizlko-
te'khr;i-c*S-eskiy i7nstitute kii
Tl*'~*i-,E.- D')w-temperature gamma )rradiation and annealing of indium anti-nonide
3,,YURCE: Fizika tverdogo tela, v. 8, no. 6, 1966, 1&)0-1697
'NPIAC TAGS: indium compound, indium antimcnide, irradiation, annealing, resistivity,
Hall constant, photoconductivity, radiation damage, crystal defect
ABSTRACT: in view of the a carc ity 0 f published data an the effe ct of gama irr mdigtion an
InSb . the authars irradLated n-type InSb at 774C (dwe rfte ZkXW*P'09k Asslesec) with t
Ltnslty 2.9 x Dl'- L,6 x 1d4 cur 3 and p-type InSb with initial hole density 5 -3 x 1013
- 3.3 x 10" cw*3. The resistivity, HaU constant, and the spectral distribution of
the photoconductivity were measured before and during irradiation, and during the
subsequent annealing. The test results are used to detervAne the rate of defect
formation and the extremal positions of the Fermi level as fwwtions of the irradia-
tion dose. The results Indicate that the defects produced by irradiation act as
ionized scattering centers, and that the rate of defects formt1as is a rather com-
plicated function of the irradiation dose. Some 1Wpotheses a" advanced concerning
the energy level scheme of the irradiated indium antimonide.
It is concluded that
2

F -
L 32636-66
ACC N
R' AF6018527
there are several simttltaneoiisly acting mechanisms affecting the course of annealing
of the radiation derocf.!i, wid Ust tiv rate of thin annealing dependa on the InIttal
carrier denj;Av 'In the, :;emicondijetor. Investigation of the Isochronous annealing of
defects in Uie ) nterval 77 - 300K yielded results that agree with published data,
thus indicating that these procesEjes are governed by the main defects always producedi
after ~'rradiation. Two levels, E. - 0.083 and Ey + O.M ev, are credited to radia-
tion defects and are classified as donor and acceptor levels, respectively. The
authors thank S- M. Wvki for Interest, V. V. WAVSnOW-TOr-SUPPlying MaMY samples,
and, art-.-bas: 7 figures and
-L. 3L. JAkina for help with the measuremeii Ea.
4 tables. (021
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PIA?-

"V' ", P' _,-LP014YAKOVt V. I. and KUZIMIN, L. L.
mUchnology of Eloctrochemical Production", Takhnologiya Elektrokhimichookikh
Proizvodstvo Go*limizdat,, 676 pp, 1949.

YASHOVETSO V. P.
*Tecbwloa of the E-loctro-Cbmd &I Industry,- FAscom, 1949.

Of
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Tupc
And
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Lit .,4 All tw ISKA1111,41",
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lying &I the amo& ate a
,,,, t. the -twt,,

WIM/ftwo - Vatellowsphyl Avg 16-
60thod for Preparing Nicrosections of Lead and
Xte Alloyso" V. P. Hashovetep A. X. Lyandres,
"&to Sci Res But Inst
euvod Lsb* vol vi, No 8,, pp =4-lo16
Swievs existing methods #rA recommends method
t4 asisting of cutting specisentvith m1crotome
4ja of subsequent coarse etching tsld polishinj~.
,IU9 etqbing. Mixture of equal volumes of SUM
Silitic acid and concentrated I peroxide has b~
used for coarse etching. Reagent for fine.,
IND 169
NeU.".ographyp Lead Aug-
(Coutd)
etching consists of nitric acid, glacial aceiic-':O,
,.sold and glycerin in ratio of lil;2.
pamits discernment of separate structviral
viiients of illoys, and to expose orientatlon~'
;rYstals.
PR
5

C4
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A WMOW 4d wwaoftwm de 69 dowk G" b odso".
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R. M. S.

P. PfAW, h4im. i I Aps-twd
will)(19M.-the 11"tcuttal AwIllutioll Lq
doill. in a CWM% akcitolyse solu. in a dAt L-duped cell
tu&dt W a burlsommil gl&" battemm, 2 vettic-al Nrislirl L.
MhAgwd Cm strip% wwim ascalbak and ansAw.and twat-nd
*t(fVOQ#gI4*.. Tbrdk"dCObHE"#Otl*tMiftdiwaitelw*
ud the L-sicip it 2 cm.. flefirwa Ow t4vt 1-4it. IS 4-#n.
%'iO*td W0014-011Y. die VVII It 16 fWftIfl 9-1 hAlf A ril 14* At
clivuoty.U. TM MICAMICIAM0411. ditt IMAWA447 Of 0 PO-
lAtiAMIS CU"00t. &iV6 tb& POMIdilt 466410KAt"I CUtVWS
alim consecutive wctkme of tbr cell. atul ~col* U111
COMSC"fA.tkw al nwpo of litopawntial and clev.
ftww nut. p't the, current disuibullims over %be vice-
mmirs, the slo, eke. coosit. of ttw miln.. the simliAl distra.
Imation of the obusic mW polstrimlion encitly, the elec. te-
sWifictiv (A th~ tell, atul the poUris.Atmwi curve. Tht,
tnetlikul a% Applimble to tno&ls of ck-citolyfert of any Per-
.-fitwit fulw. IN. Tfum

FORSBLOMg, G.V. Prinimal, uchastiye POPOV, R.B.;
GULYANITSKIY, B.S., insh., retsenzent; FIRSANDVA, L.A.,
red.; ATTOPOVICH, M.K., tekhn. red.
(Electrolytic production of alumintm] Elektroliticheskoe
proisvedstvo aliuminiia; praktichaskoe rukovadstvo Ma.
raboahikh, brigadirov i masterov taekhev slaktroliza aliu-
minevykh savodoy. Moskva, Metallurgisdat, 1951. 220 p.
(MIRA 16:7)
1. Vaesoyunnyy alyumboyeyo-magniyevyy institut (for
Mashovets, Forablom).
(Aluminum-Electrometallurgy)

MASHOVICT YUDIN, B.F.
!EOIzTSj-y-E4
!
Thermodynamics of the interaction between AlF3.1 Na 3AlF6 and NaA1F4
with water vapor. Izv. vys. ucheb. zav.; ts"t , met. 5 no.41
95-105 162. (KMA 16-- 5)
1. Leningradskiy takhnologicheakly institut, kafedra fizicheskoy
khInJi.
(Aluminum fluoride-Thermodynamic properties)
(Gryolite-Thermodynanic properties)
(Vapor pressure)

1cf,
z5F-mm 24.
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tl,.XtMyt. ..d'A WW
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VO ID 44
77.
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"*AMMMd8U'Y - AIVMI*M 52
"UmetUPUGS of tbo Compoettim of Anode Gums
the.Ileetro2yets or MbIten cryoiite,-Uvw~
lm,," v. P. Wshovets., M. F. Dograzediffil, ye. U.
Floilaskays
"Zbw Prik Khiz" Vol 25, No 9., PP 955-965
A"kfts state that before this work, the fornatim
CC'**e C6 as a prinary anode product bad never
beew .6 -lished experimentally in the electrayz
st;b
of Al~ -A: a
CINSAMUCK pft~~ eCIRS
414 pr' iftry anode W9'x Swiding
O~t Of the 9'" VIthAb*~'evdrboi anode'.
ibdrease in temp and a decrease in the anodic
ad enriched the primary gas vitb carbon =m=_
Ift. The content of CO vas also increased by
UAU9 a carbon anode with bigb oxidizability.
ft, -using carbon with low cbem activity and; ap-
pijing lov temp and high current densities,
pr1wxy gas consisting of almost pure carj~w
40xide vas generated. In industrial sinale'-
abode-baths, the av content of CO in bath "
fto relation of Ut ea*b
to the ab.ove fact,ors,vas
vv U' as to tbe - Vidth of the
abaft.
tim of ta~'.the se'vie. At 'Vii.
of the axiode effect, a siollf"Int a~.I-ok
404 of unknovn compu with a hiSt mol wt VMS
rGuid.

MSjjr)VV,rS V. 14.
as 440080"'d 4w.
of suck design to allow the Immediate eamong of plummy
anode go. Incresse In -tMV, MA detrupt In C4, let.
rkhed (he aiWe gas with CO. CO kmck~ with mdRy
oxitiliable C swides. Low krup. mW high c-d- with low-
activity C anodei pve 977q C% In the suade psm C%
.(5"%) was found In anode ps korm buldstrial unl4mode

MA514cwl-s, V
VA P2 v@ 1-10 MOM _~_
rikfdC Kki
7~ -4WOr.~-TILt ohmic voltage j
46.,."MeAllM-hath ith At M grapbUt
was detd. ansilytically as a function of Paranicten
objAined-eitisw ftom a plot of the tiec. field or from the.
dhignsiqw of ibe dettrodes,- length A and width B (P -
9)) and the Interelectfode distance L. At firit It
.2(A. -4.1
Was ~4ssumed,thxt~ the entirer polarization effect was due to
flist- of.thelgraphitt electrode. *'Tft^jl 3 fields of this elce-
trade weve plotted* no-assumed poladulloo: polarWalon
assinaed - according . to - the c.d. vs. 91 data of. Karpacheva,
Kjiy.T,1wnpson, d ali (C.A, 27,4483 - The analysk of
thesi fields led to the conclusion that tit effect ot polarim-
tioW on AV was negligible and the equation was reduccil to'
AV (rpINI) E mi - 1.56 which was cnnsidered in
satistactory agreement with exptl. data (I - W, i the
el"*o -power of each "tube" of force. N the no. of tubes In
tbt entir e- val.. w the no. ol"elements of vol. In each tube,
an4 p the specific resistance of the electrolytt), A sintpler
equation which could be solved without plottiug the elec-
trode field was obtained: From previously published data.
(C.A. 40, 10962g) it was shown that the effect of the distance
C between the walls and the edgcs of the electrodes was
negligible for C ?. 5L. It vnL% also shown that for L be-
1h
1~,dlI cm,,enoo"ube,,~a u
~~3aa fu ction,nf L was
ino tI of C al 11 L the
1, 171B L 4- 9.5)1. Over a
a ras AV L
he In ded. values agrc~d sntis,
w 1. lg. oft .eters the
[Retorily with exptl. data. Hencowitz

1. MASHOVETS, V. P.: FOR3BDYA, G. V.
2. US3R (600)
4. Electric Currents
7. Distribution of a direct current electric field in electrolyzers. Zhur. fiz. khIm.
26 no. 10, 1952.
9. MonthIZ List of Russian Accessi.2ns, Library of Congress, March 1953. Unclassified.

fT

--j R -
I~T.TSAIRII OAR

KAMOMS, VePe,, prof,, doictor tekhn. nuak.
Investigating copper oxide cells at low temperatures. Sbor. nawh.
trud. LWIIZRT no,5t2l4-221 153, (NrRA 1193)
(Illectrio batteries)

wIftaunt" the OdMa for ft VaOanWty o1 DIStdWan
01-AAdAL CZ thualtbat. _V Umb 0 27 up.. Pylklad.
Aim, 19A, KTITY134TR 4 "0 ippl. Cherts.
U.S.S.R.. 1053, K (1), 731-73W5 it.
desimbility of obtaining such a criterion,
em
ZhaaWna the
eArba thq talf6mdly of diatdbaUan oftha-matol.
mdom
Y. bia&_

uss R
The ~cpendence of the el"trorhenilral anti ohnite (all of
ngignti~a upon the (jeoinctry iii an dectroly[IC LtIll
. I
t) 11~w~l NI'I'lloveti. J. API't,
W.4; C'.. 1. .18,

;eThe- dipiidiiiii-ot the electimhemical h lz twof
0 ally In
its~oin Ile trolytIC M ' Y
Li,
Zkk~ Pwkla 1~ 26"
1 eacmv mMal of so electrode wx,4
It upon local c. d% were detd. by cell georn-
etry. In of low c.d,, the electrode potenti-11
usually diZiZ;l faster than linearly #fth a. decrease of*
c.d. Therefore'the: effective potential was lowered aa cur-
rent Aistribution became northomogeneous. The change in
potential was illustrated for 2 eTectrolytic cells differing only
Jn the shape or theanode. A graphical method of field con-
3fXUCti()n was used (C.A. 47,082U). Potesitialandeurrvnt
distribution pztterns were sbown for a cellwith two ixtrallet
plate electrodes (presumably COM mm. long, sepd. by a
distance, 1, where I - 50 or 100 tnm. One electrode was
displaced 100 rum. relative to the other. The technique
-permitted cWcn.,of cell consts, as used In cond. measure-
Ments(C.A.44,480N). Cell consts., C. were fneasmed for
a solu. c 'oriti. 50 &A. of 060t.51110 and 3 solos. of the
same concis. of CuSO& contg~ 113SO#. At I m C = 2.05 for
CuS04 soln.; 2.32 for a sola. coutg. 20 C. A.: 1.2.3 for a
Soln, contg. 60 9-A.; and-2.4 for-& soln, contg. 3W g.11.
AtJ - 50 nim., with a.c. C - 1.33-lor all 4 soIns.; withil.c.,
(45 ma-). C = 1.33 for LJ~e CuSOt, 5oln.: 1.40 for the solri.:
contg. 20 %-/L; I -M for the soln. conts. 50 9,A 4 and 1.811
for a tin, collig. 3.50 g./1. With the Sol". centg. 60 g.11.
and 1 .50 m.m. the values of Cat 15 and 00 ma, d.c. were
1.68 and 1.40, re-sp. The Increase of C in the d.-c. niewsure-
ments with hig1jur lIrSO4 coneni-resulted from longer cur-
lines and must be ascribed to greater polarization since f
ithecond.increnied. Currentdistribution must bouniform
to obtain reproditcible efectrolytic cell dAta, esrx-c'.-Mv It,
good conductorssitch as [used salti. For t1th mLio:j. "CrU
con3ts." deriveil from a-c~ data %yere in-Admi,"Ut: fnr i tse in
d.-c. eltctrolysis. R. V.

IRMIN, A.R.. akadsaik; FOWMQK. G.V.; WHOTM. T.P.
Conditions for the modeling of the e2ectric field of o2octrolysers. Dokl.
AN MM 91 no.3:593-395 JIL 153. NLRA 6:7)
1. Tassoymsmyy alymminlyevo-magalyevyy Institut (for Forablon and Mashovets).
2. Akadsmiya, nank SM (for Frwakin).
(Blectrolysls--][LeotrawahanicaI analogies)

,%:Asn'ry-C,~T29 If- p-
The Camittee on Stalin Prizon (of the Comall of bdrdeters WSR) in the fields of
selenco and laweatIms aumoumes tbat the folloving ealentIfIc workas popular ecien-
title books, and textbooks have be= rAbodtted for cowwtitUm for Stalin Prizes for
the yeoze 1952 and 1953. (�2!!!Am_ftItur9 Moscov, No. 22-40,, 20 Feb - 3 Apr 1954)
Name
Title or Work
Nmuimted by
Va3hc,'iets, V.
Foreblort, G. V.
"Tnveati-,ation c~' DC
Q
Electrical Fields in
Electrolyzers"
5tate Scientific Itesearch
Institute of AlLm.nuja and
MagneAum (13)
60: w-30604o 7 July 1954

dis cc ak"Oom", 44,14,
sm
how _X W19W
747, MOke-To com--
tk: Oil e1 tiall tions ad condu
tqua A
ftrmq* y
S" ved'"ytically."d pmY-;ixWy, reported, the equi-
poteatiat Una of. amectanguist e Jectrolyzer were-detti. over
*W, range OV, A palasizin orff of: the electrodes
tond I x tim
t2~. aPbj -,mw the tlec"Yte. RIM-
Idestkid d7,;=. s4d- par-W- to each 0 be,
wem offset so, "af.:oalk. . of It was.
A, put , -tee oppomite the
otbertbu~dkt&ffln tMfidd The electrolytic contact
-W thANGWd Wmaved normal and parallel
was pa own
was get at Predeta.
to "k Cfi~ The 1~iotcatlom~tcr.
P A he muct Moved ovet the ce" unto the zero
.~~-"At the end:of the. pt
ex
tat WW ted.1011equipotential, lines. The
t I tWtbe potential lints,and forming
0 with wux~ drawn with a divider so that
tin them was eclual to that. between the
ecialpatcatiat- thm.- The ub,-of spa ,tuW of fam",
:`-batwem.the'kaffmci lities." N., In the F4 -and their awe V
F!
W 'malmequestcalcas.: x_,f/1,&aU,
wom T6i4,(1AZm,,-wthe [Ytic de0th'in the cell).
within CE15%.
turva a CA i a. T t1mvilum ol dj/_4j, the polarizing
Of - A -td. -
the I - ~ and those of c Vs.-X gave djjdx;
-77tlie~.Azo,.e the electrode and)L the distan6i in cui, of a
X
xlvm'pofnt fimd., the edw. (Idt) -of the electrode. The
.-IN F/drj(dj/d.%) agreed satis-
%etorlij, with. dkeivipiL valim dering the difficulties
'd obtaltdo the Seiirml *du;; from ulets. Addni. con.
-VkUiOB3 = prezondy Ooe. cit. and :.A. 48 - 688&1 m
corroborated.-. Pimmwit.
7

ROMSUT, M.So~ HASHOMS. V.P.
Determining the amount of aluminum In an electrolytic cell
by mans of radioactive tracers. TSvot.mot. 28 no.5351-54
S-0 155. (NIRA 10:10)
(Aluminum-Analysis) (Radioactive tracers)

/V) C, .5- 1', 0i Vc- t --, , U, k _j
Category; UW/Awaytical Chemistry - Analysis of inorganic G-2
P~~bj!6mce..O -
Abs Jour: Beferat Zhur-Rhimiya, No 9, 1957, 31040
Author : Mashovets V. P., 7-khot ov Ye. L.
Inst :-not-irve n'
Title Analytic Determination of Carton Fluorides in Anodic Gases of
an Alumimm Cell
Orig Pub: Zh- prikl. khimii, 1956, 29, No 10, 1512-1521
Abstract: The method of determination of carbon fluorides in the gases is
based on decomposition of the fluorides with water vapor in the
presence of activated Ala.0,3 and SiO.,. (at 70043000) followed by
absorption of 00.2,; 00 is burned over CuO at 300-350' and the
resulting COA is absorbed in alk-lin solution of pyrogLUol.
The method is applicable in the separation of CP from higher
fluorides. The method described is more sensitive and yield
better reproducible results than the fluoride method. It was
found that anodic gases of an Al-cell having fired anodes, do
Card 1/2 -59-

0, in

MASHOYNTS, T.P., doktor takhnicheskikh nail . professor; RANIAU, A.I.,
ii-munt, lashoner; SUPRUN, L.M., assistent, Inzhomer.
Electrode potentials of copper oxide electrode elements and tooting
the discharge duration pattern. Sbor.LIIZNT s9.151:222-237 056.
(Electrodes) (RLRA 10:1)

.,,~"QVJ Ichaskikh nauk, professor.
1.09 hn
_ M*~~J
., -i P,.-,
Stabilizing battery galvanic call voltage. Sbor.LIIZHT no .151:?38-
246 1560' (KIaA 10:1)
(Blectric batteries)

AUTHOR: Mashovets, V.P., Professor. 136-5-10/14
TITLE: The heat balance and calculation of inter-electrode
distance for ahiminium electrolyzers. (0 teplovom balasse
i raschete mazhduelektrodnogo rasstoyaniya alyuminievykh
elektrolizerov.)
FWRIODICAL: "TavetAye MetaII711 (Non-ferrous Metals) 195?, No.5,
pp. 63 - 69 (U.S.S.R.)
ABSTRACT: The author deplores the complications which have been
introduced into heat-balance and electrode-separation calcu-
lations for aluminium electrolyzers. For example, P.P.Fedotev
(1) started the i1nnecessary practice of referring heat-
balances to the electrolyzer temperature. This has led to
numerous errors and some confusion (refs. 2 3 4) which have
been criticised by I.M. Kaganskii and A.A. ML~~an (5).
The main cause of this unfortunate development is attributable
to the unjustified use of the second law of thermo-dynamics
for probleis completely covered by the first law. The author
favours 0 C as the reference in temperature, in agreement
with G.A. Abramov and his co-workers (7) and Kaganskii and
Card 1/2 Edingaryan, and cites the balance published by V,D.Ponomarev
and I.Z. Slutskii (8) as an example of confusion and error
partly due to the use of another temperature. In discussing

The heat balance and calculation of inter-electrode distance
for aluainium. electrolyzers. (Cont.) 136-5-1o/14
the thermo-dynamics of electrolyzer operation, the author
mentions his own experimental work with A.A. Revazyan. f;1) and
his criticism together with G.V. Forablom ~13) of the Views of
G.A. Abramov at al. (7). G.V. Forsblom's (17) relatively high
value, (0.63-0.83 gem) is attributed to gas saturation and
foaming, K.P. Batashov (16) having obtaired lower values. For
calculating inter-electrode distance it is only necessary to
know the reversible decomposition voltage and the over-voltage
in the given concrete conditions of the electrolyzer, and the
Card 2/2 requirements enumerated by B.S. Gulyanitskiy and V.V. Krivoru-
cheako (18) are considered to be incorrect.
There are 18 references, 14 of which are Slavic.
ASSOCIATION: All-Union Aluminium-magnesium Institute (VAMI)
AVAILABLE:

JT~
77
use
SV-,
sit
el
Tlq~ e iv~ 1 T-,Jy~,c celk Cum- ~w
im,"do a graphite vrurtUc. The iua-l,- pf%~iccied
'die gim eketmic frwn ~wsmbLt -utL-uiU'I: Cog," Tht Mv
wim ccirteectim, Ulm t-,,i~uwk and TAICAI g%I Occtrodiil
~(,-d 1--y comucitt %I
ulbes) -%v ft, mvus gn.
p,iwa~ the Pc,,c
kcuudt~withlhc gas flo~qffigttljraugh- the
ft cam-,
tl. t,m.f. o( ~t p'L
'cc~:Xg.,
'M I aiia 87 MA,?~ wiwil,00-2114L and 61-34 of -a-
t tie IF Z A
-attui 6a-tbuf t I
M -AI
as Mcm AM.LMAJt W-1
+-4 tz"
-fif6a
41 m-,
41'q~ TW.&m
4
--va!uLi
the ficcess.,was f rpenf-cd-brk CO, + 4ir
- - 4AIG4 e,
-Altos+- -0+ -!%4Lfffic e.iaA- _u
Cot + 2 of In
77
nlucd'~st. at this v4 6~'jjtj
iiwlili. T 7 ne C. I
exilt, -e C&xo4e, had not:
bp~ M'd"
mt arts- way-ex
4,
7

A,
4
,
HO,

V-Oi m-osto fuhtt the

ain dc4iv d W 0.74 amither expt. the C
-d the
kc xudt'wpi
rFntqv!:# and kept ia.ffi-c-air vftw rila~ uncL
,
7~-l -A simi-
th ~m

d &'L
M
"ith time was exhult
ecreaft
f
at
QZ
.
.
.
,
lliv
hz4idafed tbat~cOi-w"-tbi!-c&utrv

~g NMI M-WO

T3,
137-58-5-9276
Translation from. Referativnyy zhurnal, Metallurgiya, 1958, Tqr 5, p 71 (USSR)
AUTHOR. Mas
TITLE: On the Cathodic Process in the Electrolytic Manufacture of
Aluminum (0 katodnom protsesse pri elektroliticheskorn polu-
chenii alyuminiya)
PERIODICAL: Tr. Vses. alyumin. -magn. in-ta, 1957, Nr 39, pp 274-287
ABSTRACT: A majority of the authors who have investigated the relation-
ship existing between the current efficiency and various factors
in the course of electrolysis of melts have arrived at the follow-
ing empirical formula: I? = I - k/jn , where 17 is the current ef-
ficiency, k is the losses of substance (or of electrical energy),
j is the current density, and n is an exponent. The value of the
constant k in the aboveindicated formula is determined empiric -
ally and is a function of temperature, interelectrode spacing,
design of the electrolyzer, composition of electrolyte, etc. It
represents the relative losses in metal (the fraction of metal
lost) at j = 1 amp/cmz and is always less than unity. The values
of the exponent n vary among different authors from 0.5 to 1.0.
Card 1/2 A somewhat more complicated version of this formula makes it

137-58-5-9276
On the Cathodic Process in the Electrolytic Manufacture of Aluminum
possible to determine correctly in principle metal losses that are independ-
ent of the electric current. However, a comparative analysis of the equations
presented has shown that a universal equation should cover,not only the chem-
ica' losses, which are independent of the electric current, but also electro-
chemical losses which are a function of the electrode potential-, these factors
are not taken into account in the formulas presented above.
1. G.
1. Aluminwn--Production 2. Aluminuir-Electrolysis EIe-tr,_-;IYSi.'-,
--Applications
Card 212