SCIENTIFIC ABSTRACT MILUTINOVIC, V. - MILVIDSKIY, M. G.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001134320018-8
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: January 3, 2017
• Document Release Date: July 31, 2000
• Sequence Number: 18
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

.ILE', Ljubisa; MILUTINOVIC,, Vladiml
Our experience witb imUcertions for changing or discontinuing
antitubercular agerttv. Tuberkulow 15 n0.2:238-244 lp-Je 163.
1. Bolnica za gradobolne grada. Beograd&, Zemum, Bezanijaka
Ewa - Upraynik: prim. dr Ljubisa Ilic.
(ANTITUBERMAR AGENTS)

AN LIUMA
_Ile

RUVIDIC, Rajko; BROZOVIC-VASIC, Mi3.ica;_KMT1XQVIC-BRADIC. Leposava
EROZOVIC, Branko
Determination of iron in the blood serum and bone MarTow. Role
in tU diagnosis and tberapir of anemias, Vojnosa~it. pregl, 19
no.4:280-288 Ap 162.
1. Medicinski fakultet u Bsogmdu,, Intern& klinika "B".
(IRON METABOLISM) (BLOOD CMUCAL ANALYSIS)
(A M IA) (BONE MARROW)

MILUT11"XIC, C.
Itew type of coordinated borer in the manufacture of DIXI
60 machine tools and new trends in the technique of
finishing machine parts P. 1040. TEMIKA (Savaz inzenjera
i techicara Jugoslavijei Beograd. Vol. 11, no. 7. 1956
SOURCE: East Europe Accession List (EEAL),
Library of Congress, Vol. 5, no. llp Nov. 1956

MIL'TEREP J.
Equipment for pigpens.
P. 357, (Sotsialistlik Pollumajandus3 Vol. 12, no. 8, Aug. 1957,, Tallinn, Estonia
SO: Monthly Index of East European Acessions (EEAI) Vol. 6, No. 11 November 1957

Mijx.m, J.
A barn must be of Ample design and spacious.
p. 410 (Sotsialikstlik Pollumajandus) Vol. 12, no. 9, Sept. 1957, Tallin, Estonia
SO: MONTIMY I*,!lF-X OF EAST ---UR'PEAJN AC7-MlrNS (B-ui) IrC, Vol, 7, NO. 1, JAN. 1958

MILVERE, J.
The exterior of buildings has to be kept in order. p. 327.
GAZ, WODA I TECIIIIIKA S'ANITARNA (Stawarzyszenie Naukowo-Techniczne
Inzynierow i Technikow Sanitarnych, Ogrzewnictwa I Gazownictwa)
Warszawa, Poland, Vol. 32, no. 6, June 1958.
Monthly list of East European Accession (EEAI) W, Vol. 9, no. 2, Feb. 1960
Uncl.

-66 'JP(c) JD/KW
L 7907 4VM(m)/T/ZWP(t)/EWP(k)/E'dP(b)/EWA(c)
AP5025776 SOURCE CODE: UR/0363/65/001/009/1449/1453
ACC NR.
AUTHOR: Milividski Osvenskiy, V. B. Sto!yarov,. 0. G.
If Y
ORG: Giredmet
TITLE: The effect of impurities on the plastic deformation of single crystals of
silicon
SOURCE: AN SSSR. Izvestiya. Neorganicheskiye materialy, v. 1, no. 9, 1965.
1449-1453~-
TOPIC TAGS: silicon single crystal plastic deformation, c'rysfal impurity, acti-
-vation energy r
ABSTRACT: ~T igations were made on single f rystals of silicon without
he inve.1
dislocations, grown by the Czoehralski method. The(pure sfuvfle crystals had
an impurity cojricentrattorj~of 5jI0141cm3; those alloyed-j&-th/hrsenic, W019/cO;
and those with alu ' umjJ5Xj017/cm3. The temperature depindence of the upper
min
yield point of these crystals was investigated at a constant relative deformation
velocity ve 6.5xj0-.4 sec. An exponential relation of the following form was
found:
Card 1/2 UDC: 546. 28:548. 55

L 7907-66
AP5025776
ACC NR
Be U
exp
TT
where vo is the relative deformation veloctiy; B and n are constants; U is the
activation energy of the process; k is the Boltzmann constant. The article gives
a curve showing the dependence of the upper yield point of the crystals on the
rel-d 'Live deformation velocity, at a constant temperature of 825 C. It follows from
the experimental resultathat alloying with a donor impurity decreases the activa--
tion energy and somewhat increases the constant n, while an acceptor impurity
has the oppoAite effect. 'The effect of donor and acceptor impurities on the.plastic
deformatioy~bf single crystals of silicon can be explained by the change in the
equilibrium concentration of vacancies in alloying; this causes a p-type electron
reaction within the semicondutors. Orig. art. has: -6 formulas, 2 figures, and
I table
SUB CODE: SS, MM, IC/ SUBM DATE: 17Mar65/ ORIG REF.- 003/ OTH REF:018
nw,
Card 2/2

. : V .
Methods of dvtaiTAn;ng the of Of
volatile AJmpu-.,-.it,,IFs In grow'. g gallfLm -ereenjL,I,,~ qfngle t-rysthls
by oriented All Nc-crg,. ral,. 1 nc;.9,,-.
n
1454-1458 7 165.
Go sudar a I,-;~3nnyy na-ac;hn,.~isaj c -I rival-p! I sk'Ly t P--.krjfktnyy
1.
institut redr,cme till! I cheskoy prr.-irishlenno3t'L, Moakva.

EWr(l))hO(r
-_A1CC.NRs I APS028712 'tW~E'CODE: UR/0363~65/0011011/1858/1863
e1 I !j
-AUTHOR: HIA141idskly, M. G.-; Bqrkova. A. V&; Isheva, Yu. R.
ORG: GLrejknt
TITLE: Method of developing Inhomogenetties In silicon single WMta
7_7
ZOURCE: AN SSSR* Izvestiya. Reorganicheakiye materialyj v. 1j no. 11, 1965,
1858-1863
TOPIC TAGS: crystal impurity, silicon single crystal, etched crystal, phosphorusq
arsenic, antimony, boron, aluminum
ABSTRACT:~ The possibility of developing inhomogeneities in silicon single crystals
was studied by sele L an and chemical etching and by the'electrodep6sition of
'~tl odi
copper* :_P "'A h B, an Al" mrs used as dopants. The optimum etching conditions
m d f
were selected. The results are,compared with data obtained fr