SCIENTIFIC ABSTRACT NASLEDOV, D.N. - NASLEDOV, D.N.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001136110017-0
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: March 14, 2001
• Sequence Number: 17
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

NP5LCP0Vj P-N
AID Nr. 975-2~ 23 M&Y
ZLECTRICAL BREAKDOWN OF GaAs p-n JUNCTIONS (USSR)
Nasledov, D. N., and B. V. Tsarenkov. Fizika tverdogo tela, v. 5, no. 4,
Apr 1963. 118171188. S/181/63/005/004/Q35/047
A stuck if electrical discharge in GaAs junction diodes has been made with
monocrystalline specimens of n-type gallium arsenide with 5 -1016 to 1017 cmI
electron concerdration and 3000 to 3500 cma/v-sec electron mobility. T he
specimens were doped with Cd or Zn impurities. The thickness of t he p-
layer was 10-20 IL after Cd diffusion and 20-100 IL after Zn diffusion. The
breakdown voltage was under 10 v at room temperature. Results show that
the breakdown voltage and the critical field increase almost Unearly w it h
teinperature in the range from 77 to 540'K. With constant temperature the
breakdown voltage increases with increasing critical width of the volume
charge layer during breakdown, while the critical field decreasec It 'is
shown that the breakdown mechanism is impact ionization. [BB)
cut 1/1

HIMUYLOWAg M.P.; KASLEDOV, D.N.; SLOBODCHIKOV, S.V.
Temperature dependence of current carriers lifetime in indium
armni(b. Fis. tver. tela 5 no.8s2317-2323 Ag 163. (KMA 16:9)
1. Flalko-takhnicheekly institut in. A.F.1offe AN SSSR, lAningrad.
(Indium arsenide-glactric properties)

NASLO)OV, D.N.i FOPUV, Yi,.(,.
PhotomaV,nctic~ effect in Iribb at "emif.e.-aturl,'s. Fiz. Lver. tela
5 rio.10:3031-3033 C) 1 f,3, (,',URA 16:11)
i. r'iziko-teklinicheskiy List , tut lim. A.F. lo.'fe AN S60ift, I~eriirj--
grad.

GAIAVANGV, V.V. ; ZIYAXWOV, U.; NASUMOV, D.R.
Electroo-hole unctions in p-InSb. Fiz. tvor. Lela 5 no.10:
3048-3050 0 63o (MIRA 16:11)
1. Fiziko-teklhnicho~;kiy institut Im. A.F. Ioffe Ali SSSR, lanin.-
grad.

VOROKKOVA, N.M.; NASLEDOV, D.N.; SLOBODCHIKOV, S.V.
Photoelectric properties of galli= &rsenide. Fiz. tver. tela 5
no.11*3259-3263 N 163. (MIRA 16:U)
1. Fiziko-tekhnicheskiy institut imeni A.F.Ioffe AN SSSR,
Leningrad.

ZVTOVA, N.V.; LAGUNOVA, T.S.; NASLEDOV, D.N.
Negative magnetic resistance in n-type indium arsenide at low
temperatures. Fia. tvar. tela 5 no.11:3329-3331 N 163.
(MIRA l6sl2)
1. Fiziko-tekhnicheskiy institut imeni A.F.Ioffe AN SSSR, Leningrad.

GUTKIN, A.A.; KCZLOV, M.M.-, NASIEDOV, D.N.; SEDOV, V.Y*.
1`1~10
Lon7-wave edge of the photoeffect and recombination emission In :3&-ks
p - n-junctions. Fiz. tver. tela 5 no.1-20617-3620 b 163.
(MIRA 17,21)
1. k'iziko-tekhnlchoskiy Institut Imeni A.F.1offe AN SSSR, Leningrad.

F:
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VIUMBADOVA.. K.1.; GAIAVANOV, V.V.; WLEDW9 Defis-
ObtainLrig ultrapure IzbSb crystals by the 3one mltj= method.
Fise wts i metsUaved, 16 bo.3085-393 S 163. (KM 16:11)
lo Fiziko-tekludcheskiy institut inani I.F. Ieffe.

NASLEDOV, Dmitriy Nikc L A, YG 4Y, Slr-~
[Sefnd,ir)ncm(:t--r re
1%,:vye ~riemniiri lnfrai,:-a.:-~: n
Ler.ingradskii dom
27 p. (Poluprf;vc-)(!-,.iki, r.

NASLEDOV.0 D. N.
"Formation and properties of impurity band in G&Azp InAs and InP."
report submitted for Intl Conf on Physics of Semiconductors, Paris, 19-24
Jul 64.

S H Ali" EV Yuri y Vasi i I y(jv I eh ; VA-r) A,,,
,. CHEV-K!*l, 'Ieksarya-
f
R3F
daktor kh,-,~. nai-z, ~rof.,
fiz.-mat. nailk ~.rof., red.
~ugopiwikif, a-- .~ iz,),, my--
I
.urglia,

-EAWJ=--.V D.N., prof., red.; GORYUNOVA, N.A.9 prof., red.;
GITSU, D.V., kand. fiz.-mat. nauk, red.; LANGE, V.11.,
kand. fiz.-mat. nauk, red.; FUWAUTSPII, S.I.,, kand. fiz.-
matem. nauk, red.
[Research on semiconductors; new semiconductor materials]
Issledovanlia po poluprovodnikam; novye poluprovodnikovye
materialy. Kishinev, Kartia Moldoveniaske, 1964. 173 P.
(MIRA 17:5)
1. Akademlya nail Moldavskoy SSR. Institut fiziki i matema-
tiki.

=own= im, Aftm3737 S/003Q/QvtW/=AU4A=
AUTHDRs Masledw# D. N. (ProfswW)
LConference in Kiabinew on 16-U
TrMS: Invest tions of semiconducting caftwunds
September
349
-SOLMCEi AN SSSR- Vestniks no. 1,, 1%kv ]DO-=
TOPIC TAGSs semiconductor$ nm compound, pkqsicocbmical property# crystal, energy
spectrum, car. nt carrier, semiconductor film, electrical property, tbermodYnawAo
propertyp nagnstostrictions negative magnistostriction
ABSTRAM The conference was a joint effort of the AcedoW of Science* 35=9 the
Academy of Sciences Holdavian SSR,, wA the Kishinev Universityo Seventy raports,
were r&-Aq covering the fo2lowing subjectas growing new coeVowWas cochadca"
properties., phenomena of migration in ox7stals,, structure of energy spectra,
mechsaLm of dissadnatlan at cumment carriers, Vowing Min filw# and tke prop-
artiss of the" Ww. Onsets attended the conforence frm the UJ.Aep &W-W
Sast OUWASWS wa~ Ger"We a M HMNMO

ACCEMON XRs AP4M3737
Poland,, and Chi=* Interest was especially strong In 1nvestipticas of the elac-
trical, W i-nomics and other properties of coupcwWs among slammots of the
third and fifth groups; In discoveries of negative magnistostriction In indium
arsenide and silicon carbide; in studies Of the properties obswvod in mwawy
tellurldej In reports an tAe grovM and properties of several triple compowids
such " 0 a , and other *4-4 1 - cadAnstions, The
aM"2 ZnWP2 C&"02 Znft"2
members of tJw conference ov&UAsd the work of the past, Us, years (since the
previous OWWonce) and pointed out the direction future 60t4ons shr-'A
takee They sqpbasized that special attention should be given to studies of Ideal
BiAAG =79taUs to - - n of developing methods for doping those crystals
"Wit4 TAIrioQa NPUrIt4sop to Mw search for new compounds posbassIng properUes
vanablA for practical W11catIon. The" studies mu~st inolods Investigetion of
mwgy speotra, detavindion d Impurity lowdso bWwdw of a earrierso
and ralated pbsoomwas It was ~eggestisd that futwe conterew" wiU need to
restrict thW soop* and dm2d. refrain h4n atteoptiag to "m too broad a fle2d,
ASSWIAMN a none
SUBXE= 1 00 =Z AGO O3Vja,& MCLS 00
SUB CODIs PH SO Re SOVI OW OTHO I OW
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m8amiss

ACCESSION HB: AP4011746
S/0181/64/006/001/0113/0115
AUTHORS: Goryunova, N. A.; Kes-nly*, F. P.; Nasledov, D. N.; Rud, Yu. V.
TITLE: Electrical properties of p_ZnSnAs sub 2 crystals
SOURCE: Fisika tverdogo t*l&q v. 6, no. it 1964, 113-115
TOPIC TAGS: p-ZnSrAz sub 2 crystal, electrical property, chalcopyrite structure,
Hall constant, specific conductivity, vacancy
ABSTRACT: The present work is a continuation of two other works (ff. A. Goryunova,
S. Mamayev and V. D. Prochukhan. DAr SSSH, 142, 623, 1962) and (F. X. Gashimzade.
Izv. Ar, Azerb. SSR, ser. fiz. mat., 3, 67, 1963). It represents a study of electri-
cal properties exhibited by ZnSnAs. single crystals. To resolve the contradictions
pertaining to this substance, the authors carried out an x-ray analysis of crystals
and prrctheir structure to be of chalcopyrite type with parameters: a - 5-8515
0-0005 9 11. 03 ! 0.001 1. Samples used in this work were parallelepipeds
1.5 x 3 .5 x 72 Mmi cut from single crystals. They were tested for specific conduc-
tivity,t and for Hall constant R. Neamwesents were taken in direct current in a
constant asoetic field. The study brought out the fact that this material wthibite
Cwd 1/2

Accasim xR .. Ap4oi 1746
inclusion conductivity throughout the whole range of temperatures tooted. Between
150-2009 there appears & pronounced mximum an the R - Temperature curve. The
authors believe that this maximum can be explained with the help of a two-zone
model. It is believed that quantitative determination of the valence zone structure
in cx7stals of W%Ms2 will require & complex invooti4ption of the kinetic effects
in cx7stals with various concentrations of vacancies. This will call for a study
of R and46 at low temperatures (2-78K). The authors thank A. A. Vaypolin and T. S.
Lagunova for their help in obtaining quantitative data, and F. M. Gashimzade and
0. V. Yomellyanenko for their evaluation of the work. Orig. art. hass 2 graphs.
ASSOCIATION: Fisiko-tokhaichookiy institut in. A. F. Ioffe AN SM, Leningrad
Pbrsical and Tedmical Inatitutet AN SSW); Institut fisiki AN AzorbSSR, BWm
nstituto of Frqsios, AN AzerbSSR)
R
MINITTEDs 12Ju163 DATE ACQs 14Feb64 ENCL: 00
so COWS PH NO REP SM 006 OITEER: 006
2/2

AWtSSIa! WR: AP4011750 0IM/64/006/002A130340
A-,,TRMI xesamimay*, P. P.; x1o"Ish, 2. Z.; 1%11tsew, YU. V.; Issledown D. It.; 1
Ukhamov, Tu. 1. am
inz: xa=t_=jn&awen and ra"day effects in indiva phosp3ddo
SCITRCEt Fixiks tvordogo tela, v. 6, no. 1, 1964t 131-240
"111TC TAGS: Nernst Ittingbousen effect, of fective electron mass, Indium 'Phoarhide,
W1 constant, specific electrical conductivity, dirrarentiol therral omf, optical
Osorption, polarlution, polnIzation rotntion
PSTPAU-.: In oMer to obtain supplament-ry information on the mecharl6m of electron
scattering sul the d-Spandence of the e)-foctive electron mass'an terperntur", the
nutbors investigated, in large crystalline 3amples or Indium phosinhide, the tempers-
ture dependence of the Hall constxnt, the specific electrical Conductivity, the
resistance changes in a magnetic field, the differential thermoslectromotive force,
the transverse Ncrnst-Ettingumsen. effect, the optical absorption, and tbD ra,,num or
the r*larization plans for infrared light in a angzwtic field. The results a"
summarized in Figs. 1-6 cC tb*.Eholpqure3. The authors found that In s&m4es with
an electron acneentretion of 8 2-201%d' and a depression of temperature balm 200K
Card 9~

ACCEWIM NR: v4onm
the Ran constant and the change in resistance in a magnetic field increase notice-
ably. kt - low Umperatures the scattering of electrons taken place by irpurit7 Ions.
With increase in temperature, electron scattering by lattice vibrations Increases.
,The effective mass of the electrons at room temperature is 0.066 + 0.003 times the
Pass of free electrons. Orig. art. ban: 6 figures and I forads7.
;ASSOCIATTCP: FIzik*-t*khnicbes1riy institut im. A. 1P. Toffe M SSSR,, laningred
~ 1-hysicote'OhnIcal Institute M SSSR); Fizichasidy inatitut JM Aserb. SSR, Baku
:'(Pb7sies Institute Al Aserb. SWO
SUBIOITTEDs 17J~aO DATE ACQ: 14Feb64 IN CLs 08
'SUB C=s PH NO Fa SOVS 009 M3
Card
7-

ACCE=N MRs AP402M7 S/aLft/6h/006/OD3/0T74A07T9
AUrHORS3 Ivamvas To. A.; Nasls&wj, D. No 1 Tearoultow, Be V-
TITLE: Lifetimle Of Ourra* carriers in space charge larer of aaksv-&~Uoos
wmzl Visaa, tvn4logo teUs ve 6, no* 39 2964s T76-n9
Topr, TAGSI Mace charges p n transition, volt'ampere Ch- steristics vacuum
diode, amrsa density
MSTROT: The lifetime of cummt carriers in a OVAGG GbLr&G I&YW Of GGAS-p-n-
transition has been determined fkm the aLraight portion of the statistical Van-
ampere charactoristioss under conditions when the everlime1*41 valt-sarwo
characteristics of a diode cou3A be compared quwAltativeIr with thewye TbA Sahl.
Noy",%oddW (Proo. MMO 459 2228s 1957) equation for Us VQU-Gqpav dwMater-
istles Is used to predlat the 2ifetime Is ioses
kr i
Qwd- 1/2

AMMION M1 AP40IM?
and is compared to the data from two vacum diodes OWs. So and 64). 7to results
show -that 7,, does not depend on the no Carriers up to cian" densities,
Of 3. Ow on teoverstwe in the 293 to A%. Its T&IRS Was
estimated to Us beWeen W4 and 10-8 sec. Me authars stpress tbeIr gratAINAO
to R. F. Xaxw1wv and V. 1. SbafM for thOS hs4ev Orig. art. WWI 4 fa=aa%
1 table, and 1 figure*
'A.%=1ATIONx FJs'__ ddy institut in, A. F, Ieffe AN SM Lwina-et
(?4sioa and TschnU4 IneUtiate AN SSSR)
su3mrrms o53VO DATE ACQs 3]Mar64 MEL# 00
SUB CODE: PH 90 R1W SM 003 OUMR 1 004
cam 2/2

ACIC N NRI APIA9873 4ftW*W0Q3/0958/0%0'
AVMFSa Unguent^ F. Poi Motjonlsh# as q Lapnoves To 3.1
TMj~ The Amparby bod In a7vtmU of n type 1W
SOURGEs Fialks. tvardop telap v. 6j, no. 3,, 1964,0 958_9W
TOPIC TAGSs crystal, Hall constants electron concentrationg soodconductor band
-structure
ABSTRACT i This is a continuation of investigation in support of previous work
(F. P. Kidsmmaq" B. IL 1CLotyea'sht Tn. V. Malltmew, D. V. Wasledow, and N. I.
ukhamys mo 6,v Mj 1%4)9 wAicating that ths increase in Hall constant In n-
type UP with decrease In temperature below 2009 Is due to conduction in the
impwity bed, Ons of the consequences of an ImWarity band in a crystal is a
mwdm= on the cam shming temperature dependence of the Hall constant*
Investigation In the region of 2-3M at notype UP wift electron concentration
of 8'2*20* W3 Nis almn that the Bell constant Increases so T declines down to
40-5M =d tben resehes a mmlwm% aCter wbIchit boom to dedUm till the
CWd

ACCZSSWN MR I AP4029873
towperaburs reaches IM. Below this temperature the Hall constant Is again
independent of tompersturee That this mazium is due to candwtion in the
impurity band is indicated b7 the fact, that the some mezimus is obserr-4 at
similar electron concoutrations in n4M GaM. for which this conduction in the
impurity bamid has been demonstrated* Comparisons with results on InLs,, Ldbq and
Go also support this caniclusior,6 OThe authors thank 0* V* 'remallymnenko far
valuable discussions of the results*6 Orig. wt. Woo 2 figwrose
ASSOCIATIONs Fisiko-4okhaichookir institut Ime A* Fe Uffis M SBM~ Leningrad
(Physlootechnical InsUtube AN MR)i Institut fisiki AN Ad=q Ban (Imutute
of PWsios M As=)
3UBMnTWv 3SHOO DATS ACQs 3VAr6h ML 1 00
an 00038 In. no MW gov, 004
I.C.Od

ACCEKION NR: AP4034946 S/0181/64/006/005/1550/1552
AUTHOR-3- Mikhaylova, M. P.; Nasledov,, D. N.; Popov. Yu. G.
TITLE: The photoelectric properties of n type InAs at low temperatures
SOURCE: Fizika tvardogo tela, v. 6. no. 5. 1964# 1550-1552
TOPIC TAGS: photoelectric effect, indium arsenides semiconductorp low temperature,,
photomagnetic emf# photoconductivityp temperature dependence
ABSTRAM This compound has been 5tudied in detail previously at temperatures
between 80 and M., but the literature has no information on the properties at
lower tAunperatures. The authors studied the photoelectric and photomagnetic
properties of single crystals of n-type Inks in the Interval 7 to 80K. investig-a-
tions were made at various impurity concentrations. The electron mobility was ob-
served to fan alightl with decline in temperature from 80 to 711, approximately
according to the law T1. The authors measured the dependence of the photoconductiv-
ity on electrical field strength, of the photomagnetic emf on magnetic field
strength at various tAmperaturea,, aid the dependence of both on intensity of
irradiat:.on. It was found that the photoconductivity depenft linearly an the elec-~
!_Wrll~eld stzength up to fWA3 of about 0.2 v/cmi. �aUration Is reached at
.Card

ACCMION NR: Ap4o34946
higher field strengths. The photomagnetic emf and photoconductivity also exhibit
linear dependence on intensity of irradiation at all temperatures between 7 and 80K,
It was fourAl that the photomagnatic omf increases sharply (exponentially) with
decrease in temperature down to about 20K, after which saturation was observed to
7K. In the same range the photoconductivity increases with decline in temperature
at a much slower rate. The marked increase in photomagnetic Gmf may be due to
Ancrease in effective mobility of holes at low temperatures through participation
.of high-mobility holes, which have mobilities near those of electrMs. Orige art*
;hast 2 figww. and I table.
'ASSOCUTICK: Fiziko-takhaichaskiy institut im. A. F. Ioffe AN SSSR Lenin red
:(Physicotachr.ical InstitutelAN SSSR)
SMITTEDs 21Dec63
ENCU 00
SUB CODEt RH NO HEY SOVI OM OTHERr 003
2/2
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IT
07/20W20"
XV61000, V. 5.1 Musledow, D. X.
T12W: DMWndence of the quantum yield on'tili 'photon energy for
p-n junctions in InSb
SOURCEs Fizika tverdogo tela, v. 6. no. 7, 1964, 2094-2099
TOPIC TAGSt quantum yield, indium antimonate, pn junction, photon
energy, conduction band
~ABSTRACT: -in view of the fact that earlier investigations of the
:energy dependence of the quantum yield of ImSb (J. Tauc, J. Phys.
Chem. Solids, v. 8, 219, 1959) were interpreted under the assumption
that there-are several conduction bands in InSbo the authors inves-
tigated the quantum yield in the region of 1-6 microns near the temp-
perature of liquid nitrogen, with a resolution not exceeding 200 A.
The measur nts were made on electron-hole junctions at T - 100K.
C,rd'- - 1/4

ACCESSION NRs AP4041714
The measurements have disclosed several sharply pronounced maxima.
The use of an optical system with high resolution (not exceeding
200 A) made_4t possible to calibrate the radiation source energy
with higher-accAracy (Ahv < 5%). so that several maxima previously
not observed were seen on the quantum yield vs. energy curve. The
quantum yield begins to increase for photons with energy >0.42 eV.
The position of the maxima on the energy scale is very close to the
values corresponding to the thresholds of impact ionization calcu-
lated on the basis of the band structure proposed by E. 0. Kane
(J. Phys. Ckem. Solids v. 1, 249, 1957) for InSb. The results thus
favor Kane's theory, and also offer evidence in the correctness of
the impact ionization probabilities, calculated by A. R. Beattie on
the basis of Kane's theory (J. Phys. Chem. Solids, v. 24, 1049, 1962)o
A maximum on the quantum yield hy - 0.9 ev, and can be related to
transitions from the zone that is split off as the result of spin-
orbit: interaction. A sharp minimum was also observed at hv - 0.354
ev, which goes over directly into a maximum at hv a 0.365. The reason
Card . 2/4

ACCESSION MRs AP4041714
for these extremal points an the quantum yield curve in still une3t-
plainede Orig. art. fiass 4 figures, 2 formulas, and 2 tables*
ABSOCIATZONs risiko-tekbnicheskiy institut in. A. r. Xofto AN SSSR,
Leningrad (Physicotechnical Institute, AN SSSR)
SUMXT=o MeM WMI 01
BUD CODRs Nf'p 86-
MR Rzr sov: oOO
07HBRI 008
Card 3/4

AOMMON Us AP4041714
I
man= 1 01
V.
-Raw SSW- kt.~ - - -- Ov
nuantum yield vs. T*%~tcn OWITY (1) and spwtml smaitivity (2) fbr the "
jurration of one serVIe of InSb
out 4/4

ACCESSION NRs AP4041731
S/0181/64/006/007/2187/2190
AUTHORSs Kesamanly*, F. P.; Nasledov, D. Us; Rud's Yu. VO
TITLEs Thermal emf and transverse Nernst-9ttinqshausen effect in
p-ZnSnAs2 crystals
SOURCE: Fizika tverdoqo telaj,.v* 6* nos 7. 1964, 2187-2190
TOPIC TAGSs thermal emf, Nernst Ettingshausen effect, Hall constant.
p band, transport property, conductivity
ABSTRACT: In order to investigate transport effects in crystals with
different carrier densities, the authors doped crystals with differ-
ent impurities and, by using heat treatment in some cases, obtained
AnSnAs2 crystals with hole density from 10 is to 10 20 CM -3 0 No n-
type crystals were obtained an yet. Single-crystal specimens are
transparent for wavelengths 1.5--3 tL* but no waves could be trans-
Card J./S

;ACCESSION NR: AP4041731
mitted through polycrystalline specimens. The temperature dependenc-
es of the specific conductivity a(T), the HaII constants R(T), and
'the transverse Nernst-Ettingshausen effect Q (T), and also the dif-
ferential thermal emf a(T), were measured simultaneously in the
interval 90--750K using an instrument described elsewhere (FTT, v. 6,
113, 1964). Tests have shown that the larger the density of the
.holes in the sample, the lower the QI(T) curve and the later the
mixed conductivity sets in. The maximum on the R(T) curve decreases
in absolute magnitude with increasing concentration, and the point
at which R reaches a maximum, together with the point of reversal
of the sign of R, shifts towards higher temperatures. The width of
the forbidden band was found to be 0.89 eV, in qualitatively good
agreement with the data obtained from the edge of the intrinsic ab-
.sorption. The data measured in this experiment make it possible, in
the case of a semiconductor with simple structure of allowed bands,
to determine such parameters as the density and effective mass of
the carriers, and also the scattering parameter. The effective mass
Card 2/S

ACCESSION MRs AP4041731
of the holes determined in this experiment was on the average 0.13
Moo Where m 0 -- mass of the free electron. Orig. art. has: 2 figures
and 1 table.
ASSOCIATION: Piziko;-~tekhnicheskiy institut im. A. P. Io.ffe AN SSSR,
Leningrad (Physicotechnical Institute, AN SSSR),
Institut fiziki
AN Azerb. SSR, Baku (Institute-of Physics, AN Azerb. SSR)
SUBMITTZD% 04Feb64 ENCL: 02
SUB CODE: SS.,AV' UR REP SOVt 004 OTHER: 002
3/5

-ACCMICK NRs AP4041731
01
Lj
C:
CC,AftA/"A uV/0
ENCLOSUREt 01
Tnmvratum dependences of the
Hall constant (1), snecific
electric conductivitv (2), the
transvem Nemst-Ettinrsausen
constant (3), and the differ-
ential themal emf (4) in a
emple of ZbSMAA 2*
Card 4/5

ACIOSSM
100,
02
deparidences of the tymvr*vrge samples
_rttinphausen constant in seve'"I
of,10-7j'S'"2
Mo.nudmv Wfer to diffemnt Salwies

-07
ME
08

GAIAVA.N(.,V, V.V.; NASLFTk,'J,-i,-.N,; A-;.
Mechanism of elecLr~,n SCatter~ng in pure and allrye,~ ln'~b cr-7S1-a.5!.
Fiz. tver. tela 6 no.9:,,6e3-2688 S Iv,4.
(X,L',A 17:11'i
1. Fiziko-tekhnicheskiy institut imeni loffe AN SSSR, Leningrad.

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GALAVANOV, V'.V.; FILIK'JiENKO, A~S.
Electron ip.-hility in _'nsb in tne case of a inixe-i s m,
mechanisq, Fiz. tver. L(-.a 6 no,li 3471-34"? 1, 1 r,. ~
, .'.! -' P A . t-. ,
I. F,zik(.>--tekhn I chpsk I y I P3! , .ut- ll.merit A, F~ 1,)"fe A*; 'ss,~,
Len ; ri,rud.

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ACCESSION NR: AP40&4737 aiol"16410"10031055610557
AUTHOR: G"aVaDOW, V- V. s* ftdodovs D. N. I Rsayev, IL A.
TITLE; Inductivity al InBb diodes
SOURCE: R&diotekhuik& I elektronik&. Y. 9. no. 3. 1964, S56-SS7
TOPIC TAGS: semiconductor, semiconductor diode. semiconductor diode
inductivity, IsO diode, In%% diode inductivity
ABSTRACT: An expsrimenv~l investigation of the cap&citance of alloy p-n jmc-
timz in InSb as a fmftlan of the positive-blas current Is reported. The c&paci-
taAce was measured in a bridge circuit at 78K. A we&k 2SO-kc signal was
,applied. It. was found that the diode c&p&ciftnee grow* with the forward current
0 then. dis capscitance drops off to sere, at which point the
up to & certain point*
diode exhibim Inductive characteristics. The cause of dw Inductive reaction In
the diodes tested h" set beea clarified " yet. OrIg. am Wws I figure.
M=710fft F1dko-tsMaUWw1dy Ijistitat In. A. F. IWO AN SSSR (ftwicap
CWd T"ftdea 1"Utaux a MM) MWTM 9 Aug 63
------------- --

GUTKIN, A.A.; KOZlDV, M.M.; NASLPIOV, D.N.; SEDOV, V,Yt.; TALALAKIN
I.N.
Detection of p-n-junctions in gall'i-im ar3en-'de wlth tne
aid of an MIK-1 infrared macrosrope. Prib. I tekh. eksp.
9 no.5i184-186 S-C 164. (MIRA ',":12.1
1. Fisiko-tekhnicheskly in3titut AN SSSR.

S& AP40436116 WGMI"N"'11008 / 1416 /1419
AWrMPDJL- GMUvanov, V. V_; ZiVwkk~. U.; 31askWiDw. D. N.
TITLE: Current-voltage characteristics of p-n junctions with p-InSb base
SOURCE: Radiotekhnika i elektronika, v. 9. no. 8. 1964. 1416-1419
TOPIC TAGS: semiconductor. pn junction, InSb junction, current voltage
characteristic
ABSTRACT: Measurement of the current-voltage characteristics in the 78-150K
temperature range is reported. Alloy p-n junctions were obtained from p-InSb
crystals having an impurity concentration of (3-5)xi015 per cm~. As addition
materials. Sn. Sn+Bi, ln+Bi. ln4-Te, and ln+Se were used; the p-n junction area
was about 0. 5 mm It. The results obtained - the /15 coefficient in the forward -
branch exponent. the pre-exponential factor I., the cutoff voltage % , the residual
resistance Rr. and the pattern of the forward-current temperature dependence -
'Card-

ACCESSION NR: AP4043676
are in good agreement with the Shockley theory of abrupt p-n junctions. At low
temperatures. the reverse current grows almost linearly with the applied voltage;
apparently. the current is determined by leakage. Orig. art. has: 6 figures.
I formula, and I table. I
ASSOCIATION: Fisiko-tekhnicheskiy institut AN SSSR (Physico- Technical
Institute. AN SSSR)
SUBMITTED: Z4Jun63
ENCL: 00
SUB CODE: SC NO REF SOV: 004 OTHER: 001
Zdrd- Z/z

BURDUKOV, Yu.M.; YMMIYANDIKO, O.V.; ZOTOVA, N.V.; KESAbwiLY, F.P.;
KLDTINISH, I.E.; LAGUNOVA, T.S.; NASLEDOV, D.M.; SIDOROV, Y.G.;
TALALAKIN, G.N.; SHCMLWTOV, V.re. [deceased)
Transfer effects in A111BV type compounds. Izv. AN SSSR. Ser.
fiz. 28 no.6%951-958 J" 164. (MIRA 17-7)
1. Fiziko-tekhnicheskiy inFtitut lmeni A.F. loffe AN SSSSR.

.Wpm
't
acce ISWritj levels. w- I-MA 65
PtPr . - There We ny tigated iwlna
V Infilb ~4 zu, and ca. (*1110tation of Uhl;* from LOb-bi zone
re
-4 f"qUqwt7c4mt4dnanto --The lalMa-itles -"re

rilly -109;b arystAu ---dow 410 zu-, and' ca -(0111cuunicti a vhlcb - gnu LOb by am re-
am cu
iddeb it fmam, oantwduanto T1w lomwities were
latmigated Olbt*O t1w -- *-Afi.dd A-type twims . aw-Alway, Ingo" by-rm2j-f
n
AtOlk -adlw 111m: 0*040104 wittAut, *veiling tho s"Ied tube ocatalaUg ofbat-oruL
L 21,72241--'~T
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'he r"
UZI depoldeace of thij cowittativitj
a. Ak.~IA.~ 4m a mn+nl 'n"onstat u4th:the tem
41

peraturs Aspendolum oz tile, COVAIRGSwIty Ana UK.&I ccwmz-,iu we. range.zrvm-u
a meta "tat with ~the
100i
pe ~diiiiilno~~ 6y, y car
ratures being I. Brid M ObS isdotor in the war
range and by
col.p-per-confitantas, -thc ~,om he
ri". ~jo Inj high rj4xg*._. The, temporatime depoindences are
ourveso. The of or uat norg
Abe tori'at- ion of the activation a
presiklt~d In: results al
lei,
I ug=es tab
tl PKI, P
jiI
-NK

ACCESSION MR: AP404~1355' 6/0048/64/028/006/0963/0968
AUTHOR: Galavanov, V.V. ; Filipchenko, A.S.; ~~slqdo D.N.(Doctor of physico-
wathenstical sciences) -. ~ Y
TITLE: 'Electric propertires of d-oped n-type InSb crystals in a wide range of ~em-
perature and Impurity concentration 5eport, Third Conference on Semiconductor
Compowids held In Kishinev 16 to 21 Sep 1969
SOURCE: AN SSSR. Izvestiye. Beriya fizicheskaya, v.28, no.6, 1964,963-968
TOPIC TAGSt semiconductor, electric conductivity, Hall effect, temperat-Ine rjl?;)Cjn-
dence, Indium antimonidep
h13STRACT: The electric conductivities and Hall coristantfi of n-typo r-rY9L3],q
doped with So were measured in vacuo or In argon at temperatures fr~,,n 19 t 3 77f)("K
In an effort to elucidate the mechanism of conduction electron Ficat1.-r1ni:. :he cry-
stals wore pulled from the melt by the Czochr&IskI method. CNysta. i currant
carrier concentrations at 780K from 4 x 1015 to 7 x 1018 cm- Clamp-
ed tungsten electrodes were employed, and the Hall con;jItnnts in a "
Ok-3 field. The conductivities and Hall constants of al, thti a,pociii,woj wc.-rp, nearly
Independent a temperature below about 2000K. At higher tomperatur-,--, ~~,o conducti-

ACCM ICK NR- AP4041355
vities of the crystals with low impurity conceittration increased and their Hall
constants decreased exponentially with increasog temperature. For the specimens
with impurity concentration greater than 1018 cm-3 1 the conductivity decreased and
the Hall constant incr&ased with increasing temperature In the high temperature re-
gion. The low temperature Hall nobility decreased with Increasing impurity concen-
trution from 2 x 105 2
Osnc-/V see for the material with a carrier concentration of 4 x
~x 1015 C&-3 to 8 x m2/V see for that -ith.a carrier concentration of 7 x 1013
-3
ca . All the Hall mobilities decreased with increasing temperature In the high tea-
perature region. The mobility of the conduction electrons to calculated with scat-
tering by Impurity Ions and opticol lattice vibrations taken into account, and good
agreement with the measured values is found. *Vrguments are presented which indicate
that the scattering parameter (ratio of Hall to drift mobility) should be near uni-
ty over the entire temperature range investigated, but the authors do not find them
entirely.convincing and suggest that scattering from acoustic phonons may also con-
tribute to the decrease of the mobility-at high temperatures. The Increase with In-
creasing temiperature of the Hall constant of the highly doped crystals is discussed,
but no convincing explanation It foUnd. The authors oomclude that these questions
require further laftsti"tion. Orig6artobass 7 fonvAbw 4 figum and I table.

AOCBSS ION MR: AP4041355
AWOCIATIONs Finiko-takhnIchookly instItut W.A. F. I~dfo Akodemil muk SUR (Physico-
technical Inotituts, Acadeow-ot solsoces, MR)
BUBMITnMt 00 ZNCL: 00
BUS Cmat 88,1C Im ur sov: 003 OWMR: 006

VATPOLIN, A.A.; GASHDCADE, P.M.; GORYUNOVA, N.Ao; MAMANLY, F.P.;
NABLEDCYV.. D.N.; OSMANOV, E.O.; RUDID TUOVO
ftsicochemleal and electric propertioa of certain ternary
saideanducting cmpaunds of the tjrps A11BrVCT . Izv. AN SSSR.
.. Sar. fiso 28 no.6slO85-1089 Js 064. 2 (MIRA 17%7)
1
1. Fisiko-takhnicheskiy institut imeni loffe AN SSSR.

NASLEDOV, D.N., prof.
Conference on semiconducting compounds hold at Kishinev, Vest.
AV &9SR 34 no. 1:100-102 J& 164. (MlRA 17:5)

Mir,. "V

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