SCIENTIFIC ABSTRACT OKSMAN, I.M. - OKSNER, A.M.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001237920004-3
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Sequence Number: 4
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

OESW 0 IA.,-profesBor, zaveauyuahchly; XOSTY11Y, M.7., direktDr.
Receptors in the dentin In human tooth. Stomatolvzlla no.3:11-36 153.
(HUU 6:7)
2. lafedra orsopencheskoy stomatolDgii Molotoyakogo xsdit2inskogo stomato-
logicheskogo Insti-tuts (for Okswn). 2. )4olo%Dvbkiy zeditsinskly stoma-
tologioheDki7 Inalitut (for loBlyley). (Tasth)

MIRA 1,xjj MYM, 1. -profeBBor, xu-vqauyu9hcbi7; VASIWY, S.L. dotsent,
z&Te&qdrA=; 3LUSTY"Y, X.T., direktor.
Preparation of dental bridges from stainless steel vlthvu$ soldering.
Stomatologila no.3353-54 '53, MRI 6:7)
1. Xafsara ortopedichaskoy stomato3ogii Moloto*rskogo usditsinakogo stomuto-
IoElcbeskogo Instituta (Yor Demner and Oksman). 2. XafedrA fisiki Holo-
tovskogo zedltzinBkogo stomatologiche2kogo InBtitutx (for Vusilov and
Demner). 3. Xolc)tovBkiy medltsinukiy stonatologicheakly InDtitut (for
IoBtylev). (Teetb, Artificial)

P711ily ~ N).
OxSAA,W-, -- I.N., yrofaBsDr; USHINA, A.I., kandidat meditainakikh nauk.
Innervation of pericamentum. Stonstologlia nD.2:3-7 Xr-Ap '54.
(MLRA 7:4)
1. 13 kafedry ortoyedichaskoy stomatologil stomatologichaskogo
fakul't9ta 34010tovskogo notlitsinskogo instituta.
(Teeth) (Nerves)

OKSPAD, I.H.,profeBaor (Kaman')
Diagnosis of functional disorders in misalignment of tenth.
Stomatologiia, mo.6:47-51 21-3) 055. MR& 9:5)
(MALOCCLUSION. compl.
mastication disord.. diag.)
(HASTIMICH
disord., caused by malocclusion. ding.)

is -1
CKSMAN, IBBak MMSYID'Vich
I-------------- ChellustnD-lltB0VAl8 Crt0p9dila.
Moskya, Medgis, 1937. 246 P. (mm 12:3)
(PROSTHESIS)

OXSHAN. 1.M., prof assor
, - -
Dur ajaction In connection with 3.1.Agapoy's article on the
"Determination of the masticatory function of testb In man.2 Stmato-
logils 36 no.3:69-70 Ar-Jo 157, (MIJU 10:9)
(XASTICATION) JTJWN)

DDvalopment and gtatus of orthopedic stDm tolcgy in the U.S.S.R.
Stomatologlia 36 no..r:47-51 3-0 '57. ()IIRA 11:1)
1. 1z Wadry ortopodicheakoy stomBtologii (zav. - prof. I.M.
Ck-BmBn) Xasanskogo meditainskogo Institute (dir. - dotsent R.A.
VjrBBBIOV)
(MCM-SURURY)

ClShA'11, I-)I-, ~i1lMaOUTD1NOV, Sh.S.
Plastlc 1--minescent, stomatological "tula. U2.ned.shur. 40
no.1:9D-91 Jp.-7 159. (MIU 12: 10)
1. Ix 3vifodrz ortopedicheskoy storgitologli (:sav. - prof.I.H.
QkBman) Li3anskogo maditsinskogo inBtituta,
(SPLTWA)

OKSMANJ I.M
Maxillaryphantams for practical .19BBons on sfltnting and r-M
dexitA:L prosthell-Acs'. Stomatologi.1a 1+0 no,2j94,.-96 Yz-lp 161.
WFA 14:5)
l. Iz kafedry ortopecUcheskoy stomatolo.-YU zav. - prof. I.M.
.uzanskogo .moditsinskogo iwtituta ~direktar - dotsent
R*A,'Vyaselvv). (DEMAL

OKSI-a"i, 1.11. , prof. ~, ?OGODINA, A.A., kand.med.nauk
Ilresent-day methods of treating anowlias of the =pillodantal aysten.
Stcratologiia 40 no-3:78-81 1-17-J8 161, Uml 14: 12)
1. 1z kaf&dry ortopeditbeBkoy stomatolDgli (za-v. - prof. I.M.Okm-man)
XazanBkoBo raeditainskoEo instituta (dir. - dotvDnt R.A.Vyasolev).
(ORTHODONTIA)

DWIANJ lim.) prof.
Selecting a raethod for the fixation of loose tootb in Paradentcsis.
Stomatologiia 40 no.l+:65-67 Jl-,kg 161. ~HBA 3-J.: 21)
1. Iz kafedry ortopedichOBkoy atomatologii (zav. - prof. I.M.Okfman),
Kazannko,go meditainskogo inBtituta (dlr. R.A.Tyuselev),
(GIZZ-ZISUMS) (ORTHODONTIA)

tTA;-,-y
(in Ov,, hard t' a tooth fol (-wirg a
bld. :513-5h',
I. Kafedra ortopedicheskoy oto7.a4,,ol-c,--,j,
OIL-nnn) m-.'A og-,-c~ irstliluta.

prof.; MUBOVFTS, Ya.S.,, dotsent
Manuals and textbooks on orthopedic stmatology. Vop.
obBhehei stcm. 17:113-116 164.
(mim 18:11)

OMAN, I.M., prof .
Report on the activity of the board of the cociety for 1963.
Vop. obshc~el stom. 17:117-118 164.
(FIRA 18:11)

OMPLAN, I.M.i, PrOf.; ZALTALYUIDIZ;GVA,, -c;.Z.; CGOREOTEEVA, A,D.
State )f ortho"dio Dtomatolcgical verrlce in the 7at.:;.r A. S. S, R.
Vop, obBhChOj stcm, 17:125-1,18 164,
WIRA 19.31)

XOFEYXIN, Vadin lliko3nyvvich-, ~21LIBOVETS, Takov Saruilovich;
XU;MXIDSX.TY Venlamin Turlyevich; qKaAN, 1:3aak
V l.%.L = d. nauk, red.;
Xikhayloyich; KAID" ROV, D.le.,,kand. e
KOI-LOLnE, A.V., tekhn. red.
[Technique of prosthodontics) Zuboproteznaia tekhniRa. [i3y)
W%Kopeikin i dr. Foskva, lzd-vo "Meditsina," 1964. 343 p.
(MIRA 17:4)

Oisv",- U.- 1.
-Or5w, X. I.
~ ~ -V". ~~
'SmbscrlborO telegrapb sxcbanV of small capacity. Tost.jyjazi
24 xo-7:3-4 JI 134. (XLRA 7:7)
1. Inzhexer Glaywgo vpraylemiya telegrafiRey s"xii.
(Islegmpb-Apparatua and supplies)

Use of facnialle apparatus for 911minating mistakes iz pr6coaximg
to-legraus, Vent. vviazi 23 no.3:21-23 W. 163. (XMA 16:3)
1. Starobi-y iz~b. 'Glaynogo -upravleniya mzhdugoroanoy tolegrafto-
telefonnoy avy"i Mniaterptva vvyaki WSR (for Oksm=). 2. Starabiy
itzb. laboratorli TSentral3nogo tele,grafa SSSR (for Hellnik).
(Telegraph) (Phototelegraphy)

B)ZICYPAL'.. A.B., kandjdat nf)dl,tslnskikb ntuk: DXSW, X.I., -yracb.
Yungoun flora M lzmall, IlroTograd, 3okolay&T. OdoBsa, Xber-
son and Xbr2el'nitakly ProTinca. Teat.van. I dorm. no-3:53
~~-J#) 155. (MLRA 8:10)
1. Iz Odazakogo kozbno-vanmrnlogicbm3kogn inatituts Imani
Glavcbe
(UMIN-3--MGI. PATHOGIRXIC)

OISMN, T.m.
3ffect of curarelike substances In conbined anamthesia on the
antitoxic function of the liver. Xhirlirglin 35 no.3:66-71
M.r 159. (MIR& 12:8)
1. Is kafedr7 fakulltetskoy khtrurgit (2av. - prof. I.S.Zhorov)
saniturno-gigiyenicheBkogo fakul'tate. I MDBkovBkogo ordena
Lenina neditainskogo inBtituta iment I.M.SechBnova.
(LIVSH, eff. of drugi on
muse. relaxants In annBth. on antitoxic
funct. (RUBD
(miscm 1-01AILMS, eff.
on antitoxic funet. of liver In aneeth. (Rue))

OKSIM, T. N. CRnd Mod Sci -- "The antitoxic function of the liver and the blood
-t4i
vugar im certain m%FpftOAwI-- of * anesthesio." M03, 1960 (2nd Uos State Mod Innt
Am N. 1. Pirogo-7). (KL, 1-61, 209)
-412-

OKSMAN3 T.M.
Changes in the blood sugar during embined, anesthesia with the
Use of various curarelike substances (muBc2,e relaxants). iKhirurglia
36 no.'7376-79 Je 260. WIPA 13:12)
(BLOOD SUGkR) (MUSCLE HEIAIMITS)
(AMTHESII)

1y T 7,1
Technique of of an r x,rv-:7 1. d i~, - F
!-:'I 4-2:2r>-29
Intravittil I~npho- and vazovraphy in a repl,Lrtod
prt~ I Iminary i ry;nrt. I b; 1.: 9:;,
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V
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Laborat-oripi po
j tk%n-v

T.M.
TrannPlantation of an extrenity urAcr Irolorwed hyToth(~r-.1a;
prelimil.-try r-port. Tn,,cly I-go 1.2-11 /,2:160-1.68 165.
(1-ars,
2. Laboratoriya po penisadke or[-,izicv i tkaney AMN' SSSR.

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56-5 -2/55
AUTHM VERTSNER, V.N.., GORWNO~ BoV.0 OKSIIA~~ 12,Ao
TITLE Structural P,~culiarities of Sb 5 _T"-r-s---
(StruktunW,e osobermosti -iernisQ3 sumy. RU3.0rorl)
FMICDICAL k; Perim, I Tooreto F131ki, 1957, Vol 32, lir 5. ipp 957 - 961
~U'U.Srnlk*
ABSTRACT ha structural Anyv;Hgationn of a thin, photo-sensitive antizony-aul-
phur layer by the "alectrographic" irethod shored that this layer con-
5ists mainly of ;corphous Sb S I a thin oxide skin of cubic Sb2s3 -crym
stals, and perhaps also of S91-ti metallic arIlmony.
He2ting of the sublimates causes growing of the crystalso The cryntal-
lites forming on the 3urf4ce during the oxide phase hays a different
orientation which depends on the temperature of tho base upon which they
-were procipitatedo
The phenomenon of photot:emitivity of tho Sb S -layer in probably not
bound to the cryatallIzation of the principai ;Uantity of the artnonys
but'due to the procas3as responsible for the oxide phiots.
ASSOCIATION S~h
U te Optical In3titute
TRESENTED BY
SUBMITM
AVAIUBLE Library of Congress
C ard 1A

SOV/109-3-12-9/13
AUT11ORS: Cksiran., Ya.A. and Yenifanov, M.V.
TITLE: Sluggishness of the Photo- conduct', Jvcl Tu~%es
of the Vidicon Type (K voprosu ob inertsionnosti foto-
reziotivnykh trubok tipa Vidikon")
PERIODICAL: Radlotekhnika I ElektronlIcn, 1958.. Vol 3, Nr 12,
PP 1501 - 1515 (USSR)
ABSTRACT: The inertia obser-qed in photo-conductive tubes is of two
kinds. The first type of inertia is usually ascribed to
the Incomplete discharge .,)f a picture element by the
electron beam., while the second is due to the relaxation
of the photo-effect In the naterial. of the target. The
inertia effects were Investigated experimentally and the
results of the experinents and their interpretation are
given in this paper. The equipment used in the experiments
is shown In the block schematic of Figure 1. The basic
unit of the equiprent was ~Ln amplifier, comprising a
balaniz~ed input stage, a nodulato.- and oscillator operating
at 110 kc1s, an AC amplifier and a phase detector. The
investigated samples were In the form of glass plates which
were coated vith a transparent layer of platinum and then
Z,iven a coati-ng of antinony sulphide. The samples were
Card 1/5 placed In a special, .holder so that the aurface of the vemi-

SOV/109-3-12-9/13
On the Problem of SlUggi3hness of the fhoto-conductive Tubes of the
Vidicon Type
conducting layer was In contact with a drop of mercury,
which served as an electrole. The platininz layer was
used as the aecond electrode. The vample was illum."nated
throuSh the g~.as3. In -order to Investigate the relaxatinn
of the phot,,~-ccndut,1t1v1tY,, the samples were illu--,ftnalted
by regular 11gat pu"oes having a frequency of 1 cps. Me
re-5ulting cur~a3 of the 1_.-J;-rea,9e and fall of the photo-
currerat are Sfven ia FIg-ilre 2. The experimental poirts
z2hown in the figure were taken by the partial time method
(Ref 12); the cuinres c~,,rreopond to the Illuminations
of IGO Lux and 25 Lux. Ri:rther experizental resulto are
givemin Figure 3, which represent the charging and dle-
charging currents of the target: the full curves were
taken in comple-te darkness, ~tille 06-.he dashed c~irves we---e
reasured at an 111mmination of 50 Lux. From these
experimental data, it Is concluded that the photo-ccriductive
target can be represented by an equivalent circuit consisti-...:
of a two-stage RC network. This 13 shown In Figure 4.
The operation of the target can be simiilated by either )f
the two equivalent clr,:~ults shown In FITires 6. 111jo
Card A aimpler of the elronltn comprines two switches, KI and K2;
'f W

SOY1102-3-12-9113
On the Problem of SlugglohneSs of t1ne Photo-conductIve Tubes of the
Vidic-on Type
U
the yet, K, simula es the switching, while K2 simulates
.L
the illumination cf' a picture element (increase in con-
duct-Irity). 7,h-ts circuilt comprises also resistance r
which revresen-',s the internal resistance of the beapi, and
an RC network whii,.h is switched on for duration Tj and
sWLtc-hed off for a t.*me T2; T, and T represent the
2
SwitchIng time and ,,,%Ie duration of a frame, respectively.
The operation of the photo-conductive tube can be
represented nore accurately Ity the second circuit of
Figure 6, ,,,hIc;h coni3tsts of two RC networkn. By employing
the first -Ir:nt~tt (-.,f Pigure 6, It can be shown that the
slugnal produ,.,ed by t~t-~ t,.,.be at the end of the n-th
switching cyclie is ger, by Eq ("11) where the quantities
p an)d -r are defin-ed by Ithe equations on P 1508- When
n-* C>O , 'tile. sign-Al reacIres a 3tationar-j value which 12
expressed 1); Eq (12). The switching inertia of the tulte
can I~e defir,ed as a ralklo of the signal after the n-th
`e to th: --taticrai-- :AF,.nal and this is expressed by
Card 3/5 cyc -1 1- V

10VA09-3-12-9113
On the PrObleM GA" of tl-e Fhc~to-conductlre Tubeo of 4--e
Vidl-con Tj-pe
Eq (13). Tll.,;~- lvame -hype -jf analyzia can be drme for the
o-L-oc,nd .~f 6 b~ulu the mathematics Iteconnes
%re :-y rv.,? Yed. It 1-9 however, that t,'-,,e vali-le cf
by Eq (16), while
-',3 brpr-,timate"y expressed ty Eq (-,L-).
71he -1r. Eq (.7) J.2 defirn-d by Eq3 (14). 'Yh,
nw'-"!~P'r cl-f na~ejLiaz"y rea;3h the stati~-),-,ary -,r-"!je
,if th-:~ z1glIal ~,,an. be artp:ro~~-lmalt;ely expressed by Eq (2-0).
Z-.2.s was empl,:~yed 4,*~) repreaqent th~; tlransletit
pro,,,eso,?s a3 a P~*2?-~"i--,-'l the number of cycles; th-e
reoult,-q ar,:~ gray,*r-.-!'--'..')'i,:- in Figures 7; the first
- - - - r - I., - P, 3-.17 "- T,
cur.,e to tt-~ -;ise wheii thc illupdnati"I,. r -'.0
In ark of 'he scpa~~? --harge, whille the se,~c,,,'d ~--,rv~?
e,3rrespcikds to t-h de--r--aBe In the space charge. ~lhe.,~e
rerallts were confirm-A ex-per-imentally by rz,.eans of a nodel
consisti,-~F cf ca- twc-Btage RC n5twork., furiAohed wj.'.;h the
neces,jary- wltches; thp curve obl-ained frcm this mAel
are shown iln Fig,,~re 9. From the experimental results
obtairsed, it Is co-nc' 'uded that the transi--nnt proceoses
phot.o-ionductive tubes can be explained if It Is asmxned
Caa-d 4/5

SOV/100-3-12-9/13
On the Problem of M4giBh*zBt'*e Photo- conductive Tubes of the
Viditon Type
that: 1) the high-reBintance layer of the semi-conductor
contains a space charge*vhose magnitua6 depandB on the
illumination and, 2) the -lifetime of the eaAriers is
shorter than the transient tine of the diffusion-drift
equilibrium. There are 9 figures and 13 references,
5 of which are Znglish, 2 German and 6 Soviet.
SUBMITTED: April 109 1957
Card 5/5

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SOV/109-59-4-2-26/2'7
AUTHORS: Oksman Ya.A. and Tikhotairov, G.P.
TITLE: Cathode Conductivity of Antimony Sulphide Films
(KatodoDrovodimostl plenok sernistoy surlmy)
PERIMICAL:Radiote-khnika i Elelftronika, 1959, Vol 4: Nr 2,
pp 344-,3L~6 (USSR)
ABSTRACT: The effect of the increase of the conductivity of fine
dielectric and semi-cor-ductor films, when subjected '[.;a
electron bombardment, is used in the amplification of
the photo-emission currents (Ref 1). This effect is
known as the cathode conductivity. The effect iss-
characteriz3d by the fact that it is possible to obtain
.S 4.0
vexy high curient gain. The aim of this work I,,
dete:rmine the limiting gain which can be obtained with
films of antimony sulphide at the ambient tamper~-',ure-
The Masurazent of the gain was done by emplcying a
demountable model of a vidicon tub-- (See Fig 1).
The tube was operated in the regii:,e of fast elact--ons,
so that the potential of the investignted film AnLi
positive Witil ro-npoet to tilt) b-100 matlurit-Al Of tho si~prll
Card 113 plato. Tho tarbpts wore prepared as follows.- a thin

SO'V/109-59-4-2-26/27
Cathode Conductivity of Antimony aSulphide Films
organic film was stretched over a ring and this was
coated by a transparent layer of aluminum ; a lajer of
antimony sulphide, having a thiclmosB oi' 1-2 p, was
then deposited on the aluminum film. An electron-
optical system was fitted above the target so tha-; the
target could be illuminated from the rear side by a
diffuse beam of fast electrons. The accelerating
voltage V could be varied from 0 to 25 kV. All the
measurements were done at the ambient temuerature.
The experimental results are shown in Fig 2 and 3.
Fig I shows the dependence of the induced current on
the intensity of the exciting current for various
values of the accelerating potential. Fig 3 illuBtratc~;
the amplification of the target as a function of the
accelerating potential. From Fig 3 it is seen that tide
max:inum amplification is higher than 600. This is more
than can be obtained with films of selenium, arsenic
sulphide or aluminum oxide (~see Ref 2 and 3). It Was
Card 2/3

SOV/109-59-4-2-2-6/27
Cathode Conductivity of Antimony Sulphide Films
also found that the inertia of the
order of 0.2 to 2 sec. 'There are 3
5 references of vAiich 2 are Soviet
SUBMITTED: 27th Pebruai-j 1958
targets was of 'he
V
figures and
and 3 Englioh.
Card 313

82998
;*2600
AUTEORS:
TITLE
Oksman, Ya. A.,
Investigation of
by Means of the
Burlakov, A. V. N
Photoconductivity of
PEotodielec-T71-31-Tfect
3/181/60/002/008/017/04".
B006/BO70
Powder Semiconductors-
1~
PERIODICAL. Fizika tverdogo tela, 1960, Vol. 2, No. 8, pp. 1818-18,18
TEXT: The purpose of the present work was to investigate the conditions
in which the photodielectric effect may be brought in clear relationship
With the photoconductivity of a semiconductor powder dispersed in a
dielectric. A method is given that permits the determination of the V<
phenomenological characteristics of the semiconductor. The photodielec-
tric effect is in general a complex of phenomena in which the most
important are: (a) a change in the number of polarization centers
without current, (b) the photoconductivity (shange in the number of free
carriers), and (c) a new distribution of the volume charges in the
individual grains, which is expressed as a structural or electrJcal
inhomogeneity of the substance and is observed together with (b).
Card 1/3

82998
Investigation of Photoconductivity of S/181/60/002/008/017/0-l-,
Powder Semiconductors by Means of the B006/BO70
Photodielectric Effect
[Abstracter's note: Throughout the paper, these phenomena are denoted by
"a 11cs", and "'all, corresponding to "all, "b", -and "c" of the abetract..'
'j
In the introduction, an equivalent circuit for the representation of the
photoconductivity with the help of the complei of the photodielectric
affect is described. The dielectric matrix. in which the nomiconducter
is dispersed (condenser). hav a its equivalent an electric circuit in
which the components of its conductivity may be represented by (1) and
(2). The fundamental relations are then derived and the experimental
method is described. The method of investigation of the photodielectric
effect consists in a separation of the conducting components (or the
components of the complex re3iDtance) of the condensors investigated.
Since these components have a phase displacement of x12, they are
separated by a phase sensitive circuit (ring - discriminator). The whole
circuit for the investigation of the steady-state and kinetic laws of
the photodielectric effect is given in Fig. 3, and is described. For a
condensor filled with a oiature of CdSe powder and a resin of the type
n.)4-1 (P21-1), Fig. 4 shows a rise and fall of the conductivity for
Card 2/3

82998
investigation of Photoconductivity of 31181160100210081017104d
Powder Semiconductors by Yleans of the B006/BO70
Photodielectric Effect
impulse excitations (1, 5, 50, and 100 ke/sec), and Fig. 5 shcws the
same for a condensor filled with a mixture of electroluminophosphores-
cant ZnS.Cu.Al with the resin P31-1i(for 1, 10, and 80 kc/eec) at 200C.
The effect of the processes "a" and "b" decreases with increasing
temperature and decreasing frequency. There are 5 figures and 7
references: I Soviet, 3 US, 2 British, and 1 French.
SHNITTED: December 28, 1959
Card 3/3

AUTHORS?
TIS~L-b t
PERIODICAL:
Oksman; Ya. A Burlakov, A V
----------
The Pho-todiplectrin Propertie3
S.~, enide 1~ High Temperatures
Fizll-a 4~-rdogo 1960. Vol
3
B006/2065
of Polycrys tall irle cadri-.1-2-r
, No A, pp., 1864 - 1,91,F3
TEXT: Folloving a previous p3-per (Ref I') which deals with 1hp mothoL,
of Stu ng and analy2ing tri-~ photodielectric effect in _p_~wdered jrj~~-_c,,.~._-___
ductorsv- _I
the authors de~)crib~, stuiie!i perfor-med with the same :--aterljils
but at different frequencie-. and temperatures . The F!;(perimental ma~erA"Ii
vas divided into two p3rt3 since the photodielectric propf-rtleq of p,01Y
depending on whether the
cry5talline cadmium splenid.,. d4ff-r larply,
inve.9tigatior.3 wero carriel (;ut at 1,-,w temperatures or above room
t0t
ten9 erature, This ar~i!~.-~ only givs-i tho ro3ulto obtnined ;R e e n
108 C. The seconi part will dnal zith tri,~- 1,,,x tpmp-?rature rango A3 ther-
is a relatiorsh-ip betwefn the photoliel,?ctric effpct and p1hotocon-
ductivity, it was posgible, to .~onpar-~ 'h- results obtained with those of
Other authors, Tho au*zhorq firot studied the infllience of the conc;~nTra-
Card 1/3

'k 83009
The Pbotodielectric Propert,Jes of Poly. S1-,6!1601002100e1O2I--1'O4;
crystalline Cadmium Selenide, I High B006/tB063
Temperatures
tion of CdSe powder in a dic-lectric (in which it was dispersed) on the
course of the dispersion eurves The r-sults published in the presert
paper refer to a CdSe - resin Dxture of' a weight rat~.o of It5, Fig
illustrates th~? quasi-steady changp in the active conduTtivity. Z%G
between 7 and 200 ~2ps for f iv- temperat,,i-eF, Fig 2 shows the temperature.
dependence of dark ~-onductivity aril photoccrductivity Fig. 3 shows
photoconductivity as a function of th,? eict.tation intensity at 200 and
350C. Fig2 A shows phot,,conductivity as a function of the wavt!length Of
the exciting light per unit of ir.-,.iding energy at 20 0and 70 0C The two
curves practically coincidr? - The 'spectral charac;t.,~rigtica havo, a penk at
about 0.7/,L. The activat,.on f?nergy of electrical dark conductivity
amounte to, 0.69 ev (CdSe 5ingle cryatals 1 0 53 ev - Ref 4' ) - T h e -,~ a r,
conductivity of CdSe ~~rystals depends on tht~ manner of th~,.'Ar activat-on
a *, 1.
The valu,) of 1,1~ 10 hm i~ ' fall.~ into thu range of
6
-9
10 10 ohm -n which was found tri,tho, paper of Ri 4 Th- re.-ult!,
obtainerl prove that In ~he rangr- 20-109'C ard belo-s 200 k-/ciec the
VII
Card 2/3

53009
The Photodielectric Propert-JL,3 of Poly- S/181/60/002/008/C)26/045
crystalline Cadmium Selenide. 1. High B000063
Temperatures
photodielectric effect in powdered Cd5e is clearly determined by thf~
"simple" photoconductivity. There are 4 figures and 6 referencest
6 Soviet, 1 French, a-nd 1 British.
SUBMITTED: January 13, 1960
Card.3/3

83556
S/02o/6o/134/001/007/021
%Y1 77 B0191B06O
4. .2 4Pzo
AUTHORS: Oksman,,.Xa. A , Burlakov, A. V.
TITLE: The Negative Photodielectric Effect
PERIODICAL: Doklady Akademii nauk SSSR, 1960, Vol. 134, No. 1,
pp. 77-80
TEXT: The authors studied steady rules and the relaxation of the
photodielectric effect in a typical photosemiconductor (cadraium selenide),
Above room temperature and at frequencies of up to 200 kilocycle.9, the
effects observed could be ascribed to normal photoconductivity. On deep
cooling of the samples, photoconductivity was found to drop with optical
excitation. The samples examined conBivted of a Cu disk onto which
activated cadmium selenide powder had been applied with a resin. The
activated layer was 0.2 mm thick after grinding. The samples were
connected to a bridge circuit (Fig. 1), and were cooled in the dark to
the temperature of liquid air. On a subsequent excitation with light,
both active and reactive conductance changed as illustrated by the
Card 1/3

83556
The Negative Photodielectric Effect S/02o/60/i34/001/007/021
B019/B060
diagrams of Fig. 2. A repetition of the excitation gave rise to un
increaBe In the relaxation processes (Fig, 3). The increftent of reactive
conductance was positive in all cases. The most important result ef the
investigation under discussion is the discovery of a negative increm~.nt
of acti-ya conductance in cooled samples, which had never been cb.,~erved
before. Apart from zinc sulfide phosphors, an analogous effect was
detected in some other semiconductors. The results are qualitatively
amaly2ed on the basis of the equivalent-circuit diagram of a phoio-
dielectric capacitor shown in Fig. 4. The authors conclude that. when
exciting cadmium selenide cooled in the dark, the deep traps are first
filled and, thus, increase the active conductance. The subsequent fillin6
of shallow traps causes a rise in capacitance and, thun, leads to a
reduction in the active conductance of the sample. A further conclusion
is that the deep traps are slowly devastated in the dark. These results
are tho.Toughly discussed, and it is finally stated that the negative
photodielectric effect described here supplies convincing evidence of the
existence of relaxation polarization of the carriers trapped by shallow
.&rays. There are 4 figures and 6 references: 2 Soviet, 3 French, and
Card 2/3

63556
The Negative Photodielectric Effect S/020/6()//134/001/,,)07/021
B019 B060
1 German.
PRESENTED: April 5. 1960, by A. A. Lebedev, Academician
SU33MTTED: March 25, 1960
card 3/3

20782
Z, VSSI)
B102/B214
AUTBORSt Oksman, Burlakov, A. V., and Aleksandrov, Ye. B.
TITLE3 Photodielectric propertiee of polycry*talline CdSe at low
temperatures
?ERIOI)ICAL3 Pizika tverdogo tela, v- 3, no. 3, 1961, 729-715
TEXT: The present paper is the continuation of two previous paperg (CASMqn,
Burlakov) YTTp 11, 1960, y. 1818 and p. 1884) In which methods have been
discussed for the separation o:f the photo-.cnductJvity from the complei of
phenomena causing a photodielectric effect, and where It hao been nhown that
a*bove room temperature and at frequencies -4-200 ko/sec, the photoconductivity
is responsible for th6 photodielectric effset (ph. d. 9.) in CdSe. The re-
laxation tine which determines the frequency dependence of the Debye disper-
sion of the complex dielectric constant was determined to be 0 - Ae U/k-,
v.bere A is a constant and U the height of the barriers separating th-? e,jui-
librium states of the localized carriers, A atudy has now been made Df the
steady and transient frequency dependencea of ph. d. e. at the teaperatu:-,i
Card 116

20782
Ybotodielectric
S/ 18 11611003100
1102/B214
of liquid mitTugen and for a large range of frequencies, using the rpiiultF~
o'Dtained in the two papera mentioned above. First of all, the depsnden-7ro
of the conduction components of a photedielectric capacitor on the wavelIv..(zth
of the exciting light and the excitations intensity was determined, Tho
samples and the apparatus were described in the previous papers. Fig. ~ '
abovs the frequency dependence of the Increment of the active ~DnduTtivity
of a photodielectric capacitor filled with a mixture of CdSe powder ana
polyester resin 174-1 (PN-1) in the weight ratio 1j5. The figures beDi.-4-? the
curves give the excitation intensity in r'3 (10",4 m 5000 lux). The freqtten:y
is that of the applied potential. The curves were taken at room temperature
Fig. 2 shovB the dependence of the Increment of the active conductivity of
the photodielectric capacitor on the wavelength of the exciting light at the
temperaiure of liquid nitrogen; Fig. 3 shows the same dependence for the
capacitive conductivity. Fig. 4 compares the dependences of the active arid
reactive components of the photodielectric'~spacitor on the excitation in-
tensity at nitrogen temperature. At this temperature and at high frequen-
ciaB, the ph. d. e. shows the following characteristics# 1) an in.-rease of
the excitation intensity at constant frequency lifts the stationary 1,~vel of
Card 216

20782
Photodieleotrio
S/IBI/61/003/003/007/030
3102/B214
the capacitive component of conductivity and lovers that of the active
component GP. 2) With increasing frequency the steady increment CY tends
from a negative to a positive value. 3) The rate of growth of 60P and of
the decrease of aCp with Increasing frequency increases in the first stage
of relaxation. 4) At high frequency and low excitation, the oscillogram
4Gp(t) shows a smooth increase of the active component up to the steady-state
C2
value. The active component of conductivity is given by G 0 and
Y w 'jc -7 e-
CCO Cc E2 +c,
the reactive one 'by ocp C+C (C+CO)3 -7-, where C is the capacitance of
the semitonduotor, Cc the capacitance of the passive dielectric, Ethe elec-
trical conductivity of the semiconductor) and v the angular frequency. The
results of the investigation may be summarized as fOllOWB3 1) The yh. do so
in polycrBtalline CdSe at nitrogen temperature Is caused by localized car-
riers. 2~ Optical excitation in the region of maximum photoconductivity
leads to consecutive filling of the local centers beginning with the lowest.
Long or abort ways radiation changes the concentration of the low-level car-
3) In -the oowBe of relaxation (after switching off the excitation),
Card 3/16

20782
3/181/61/003/003/007/030
PhotodielectriD ... 3102[:B214
the nonequilibrium carriers fill the low-lying recombination centers. There
are 6 figures and 6 referenceB3 4 Soviet-bloc and 2 non-Sovist-bloc.
ASSOCIATIO19i GosudarBtvennyy optich9Bkiy institut i;. S. 1. Vavilova
Leningrad (State Inatitute of Optics ineni S. 1. Vavilov,
Leningrad)
SU3MITTEDj May 14s 1960

ALUSODROV, Ye.B.1.01&W, Ya..A..,
Inves tigating the photodielectric effect at bigb frequencies.
PrIb, i tekb. ek3p. 6 no.2:1-52-157 Mr-Ap 161. ()URI 14:9)
1. Gosudarstvennyy opticheakiy In3titut.
(Dielectrics) (Photoel,ectricity)

S/161/63/005/001/035/064
B102/B166
AUTHORSt Ok3man, Ya. A., Xiseleva, M. N., and kartinson, B. 'M.
TITLEj Drift Aiapersion in the photodielectric effect in alloyed
germanium
PERIODICAL: Fizika tverdogo tela, V. 5, no. 1, 19639 220 - 223
TEXTs Carrier drift dispersion was studied with a gold-dopod p-type Ge
plate insulated from the plates of the photodielectric capacitor by teflon
films. Photoconduction was excited by blackbody radiation (3000C) or by
the light of an incandescent larnp. The light 1.8 - 9/A) was intermpted
wJ th a
.L .400-cps frequency, The capacitor was connected in parallel with t?T--
oncillatory circuit. This method allows of studying the field effects
exerted on volume processes. From nonsurements of the dark resistance it
was found that the siVnal vol tnge us - u/32, whore u in tho h-f ciroii i t
voltage and 67- is the increasain active conductivity of the cryntal. Th
nonlinearity of u6(u) indirates the field effect on,61. In the case of
long-save excitation the us(u) curves obtained at different frequencies
(3.6, 10, 19.6 mc) are similar in their course) they all show a tendency
Card 1/3

3/1191/6 3/00 5/00 1 /0'~ 1106,11
Drift dispersion ... B102/B166
to saturation. With short-wnve excitation the curves diffor FreittlYl 'N t
5.6 Me u depends very little on u and is very apak. A t 10 M C u 11 tv; a
peak at Rbout u - 5v, then it drops to the 3.6-Mc curve. At 19.9 Mc ur,
rises tG a broad and high maximum at about 15v and drops !iloo to tho
curve. This common approach occurs at -40v. These curves were o1r,1-rii.r-.--"
for a polished nnd etched specimen. If the specimen morfnce w,tm t-roulld,
the reIntionn were sirilnr but the maxima wvre lower and broader an:1 th~'
us-values approached each other already at 20 v. The difference
long-wave and short-wave excitation is explained by assuming the 1!;*."er
to generate minority carrier3 and to enuae their drift. Thin
duced counterflow of oppositely charged carriers depends in it'3 efll'ects
greatly on the period of the voltage applied. If the period is lonf: cn,i:1.4,
the carriers can accumulate near the crystal surfaces, thus raise t~:e rv-
combination rate and attenuate photoconductivity. From the poaition ef t~r
minAma of the us(u) curves, where the time of carrier fliFh4 d/E"', equals
the half-period of the h-f-field, the mobility u can be calculated. For
10 Me one obtains 51103cm2v*sec. There are 3 figures.
Oir-! 21,

Drift diBpersion ...
ASSOCIATIONs Gosudarstvennyy
Leningrad (State
Lenirgrad)
SUBMITTEDa July 30, 1962
S1 161/6 3/005/001/0 3 3/064
B102/B186
opticheskiy inBtitut im. S. 1. Vavilova,
optical Institute imeni S. I. Vovilov,
Card 3/3

'61,11PI, , V. N.; SHMMUSEV. Iu.V.
OKSM10 Yz 'JV
-,-
plhotodjelectrlc effect in alloyed gerzanium. "'iz. tvtr- tela
5 no.10:288~,-2889 0 163o 1~; .L1)
1. GosudarstvennyY opticheLjkiy institut in- S.I. Vavilovap Lpnin-
grad.

ACCESSION NR: AP4018387 SIOIZOIL41000100110180/0182
AUTHOR: ZabloyBkiy, E. Ye.; Oksxnan, Ya. A.
TITLE: Botup lox studying the affect of light and (electric) field upon
son-Aconductors
S07JRCE: Pribory* i takhnikaeksperimenta, no. 1. 19b4, 120-182
TOPIC TAGS: semiconductor. illuminated semiconductor, sen-Aconductor in
electric fields electric field affect, polycryj;Wline phosphor, polycrystalline
phosphor adrnittance
ABATRACT: A laboratory setup is described which parn-Ats rneasurin" variations
in a %tance of a merniconductor under the influence of light or electric field, or
their txnbined affect. The ietup tan be used for studying characteristics of
Iligh-resistance,serniconductors and blocked p-n junctions. The principal part of
the autfit, a double bridge (see Enclosure 1), perrnits applying two voltages

ACCESSION NR: AP40183'87
diVering in Irequency and amplitude to the specimen. If the text capacitor is 6f a
nonlinear type, the application of a high-amplitude low-frequency voltage will
offset the bridge balance. If relaxation of the nonlinear capacitor is last, the
bridge-diagonal signal can be amplitude-rnodulated by an exciting field. The low
frequency (600 cps) is generated by a ZG-10 oscillator, and the high frequency
J16 mc) by a GSS-6 oscillator. The above."tup permitted suppressing the
undesirable admittance component by 200 times within 0.5-200 inc; time
resolution was 4x 10-f
sec. A xecordable increment ofadn-Attance was 0.010% of
Its balance value at 0. 5 inc. Orig. art. has: 4 figures.
ASSOCIATION: GoBudarstvanny*y apticheskiy institut (State Optlical Institute)
SUBMITTED; 30J&n63 DATEACQ: 18M&r64 ENCL: 0 1
SUB CODE: PH NO RLF SOV: 005 OTHER: 001
Card 2/j P, \

ACOMMON XR3 AP108450 3/01M/a/006/004/nWA191
=HORS3 X&1yuzhnsyaj, Go As) Okamanp Ta, A*3 SmirnvT3 Ve Nei ShmaxtBUT.1 Tug Ve
TIMi Investigation of photoconductivity in gallin yhoaphide by the noncontact
method
SOURCX3 Yi-zika tvardogo tola, -Y. 6, no. h, 1964., nB6-ngi
TOPIC TAGS: photoconductivity,, gallium phoBphidej, high freVency method3 teVer-
aturo dependence., nomontact method
ABSrRACT3 The authors measured the teoperatura dependence of photoconductivity in::
poor3,v conductive GaF. They also determined the spectral distribution of the
photoconductivity at different temperatures. Those relations are shown graphicaDr
in Fig. I on the Riclosurs. A short-wayo maximm in observed,, associated with
direct transitions. The',photoconductivity is found to drop sharply at temperatur
below 64X, It iv concluded that the uso of high-froquency wthoda for InveDUBa-
ting photoconductivity is JuBtified by the reproducibility of the revu.1tv and by
the 3greementB of thene rsaultB with data Xrom the literaturg. The method has led
t to refinement of amral prcparties of GaP andj in pwticular bas confirmed the

A
ACCE.SMON NR3 A?402845o
existence of asupplementarv short-vays maximum of photoconauctivity due to the
structure of the cmiduction bw)d, The cbvern4 patterna do not yet allow construc-
tion of acompletely reliable modol of the processes taking place in GaP., hvwevar,
For this,, further bwentigations are necesBai7, especi&Ily on 3aw4aVerature
as3 7 Sigureas
decay of photoconductivity. Orig, art, h
ASSMUTION2 Fiziko-takhnichoWdy Institut iso A, 79 loffe AN SSMj, LaninVad
(Phomicotochnical Institute AN SSSR)j Gosudsr,&Vv9=V*y -optiahookAy inglitut
i; as 10 78vilova (State loytica IwItit'Ute)
SMH=3 I'BNov63 R;CL: 01
SUB COM 3% OP NO law SOV3 MO. 1 00

AccEssioN ns A4028WO 1W.Losulz 01

"Mm
Fig, L Spectral
distribution of photo-
Conduotivity In W at
varioun temporatum;

Iv2- 21Uj 3- 17LXj
h- 96Kj I- modu3sted
lightj 24s- moymdulated

04
4JV

-~
313
rd
C,

ACCESSI0N NRj AP4041689 B/0181/64/006/,007/1030/1038
AUTHORS3 Oksman, Ya. A.; Zablcvj3Xiy, E. Ye.
TITLE3 Electric properties of electroluminors
SOMCES pizi)ca tvardogo tela, v 6, no. 7# 1964, 1930-1938
TOPIC TAGS3 luminor, eleCtrOlUMinBBcence, phosphorescent material,
pbotoeffect, carrier mobility, conductivity
ABSTRACT: In order to reconcile some of the contradictions encoun
tered in the explanation of the nature of internal electrolumineB--
cence of ZnS.Cu.Al electroluminors, the author used a double ac
bridge method to study 4be electric propezties of two series of such
luminorn, witb tbo copper content varied over a wide range in each
series. Th,3 Dorip--; differed in the method of manufacture and in the
grain nize. The toist procedure is deso;ribed in -detail. The conclu-
sions are: 1. Tho -conductance and auscejptance of the tested luminors
i_Cari 1/5

ACCESBIoN NR: AP404lZB9
14, are governed mostly by relaxation processes in the 1-20 24c/sec band-'
:2. The pbotodielectric effect is quenched in all tested luminors,
I.tbus ev'idencing drift of the holes with an estimated mobility 5 X
x 10 -4 cm2/V.sec., 3. Application of fields that give rise to inter-
q nal electroluminescence produces in polycryatalline jbosphors a de-
crease in carrier density in the internal regions of,the:crystal
(due to carrier capture by the crystalline surfaces), and an in-
.:i crease in the density with increase in field (due to the increbse
in the electron tengerature). 4. The change in 'conductivity due to
the exciting field offers evidence of low nonequilibrium-electron
.1 concentration in the electroluminor, compared with the case of photo-
excitation, probably because of the low electron density. S. The
,,results of -the observations, compared with the results of microsbopic:
teatsy can be reconciled witb the internal-electroluminescence z1odal
-proposed by A. 0. Fischer JJ. Eloctrocheme Boas va 109j. 1043", 1962)o
Drige arts baiJ3 5 figures and I tables
Card _2/3

----------------------
6
Pt - !O/Pz -6 ;Y
ACCIMSION YRz rtP4044-"~.69 8/01181/6"/006/009/~~.ill
AUMORSt Dobreqo, F.: Oksman, Ya. 4.: Ry*Vkin, S. M-1-
V. N.
TITLE: Jump and photud-leler.-tric effect in qermi3-..
SOTMCE Fizika 286()-,
TOPIC TAGS: q1F,r-T1ar:,Jr-- pr)!~~ i''I v~-! . 1 c f- f
polarizability, ~3%nu.t-
effect
ABSTRACT., I n ~') i J~--ec-t ex-pe~)riments w,.':-
crystals have s.- 11,1i !,,ie existence of
cham-ge the palari.zal--. sem;.-)~)du,,--tors upom illurni.I,W 1
authore invest i Qated, I- e effect (PT)9~ Ir-,
crystal gor-manium 3cpo-A w'th. --intimony and camponvated with
at 4.2K. The p,,,rpobe of the uras to study
Cord 1/3

1 ~- "; r) q - c I.
ACCESSION KR.- AP411'-I
~d e r w!) ur, t1h c t r i