SCIENTIFIC ABSTRACT OLEKHNOVICH, M.M. - OLEKSY, J.

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• Collection: Scientific Abstracts
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• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

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SIROTP, N.K.; GOLOL013OV, Ye.M.j SHLEG, A,.Uo; OLEXTIOVIMY-140mo-
F,wsai bili ties and limits in tM appUcation of X-ray diffraction
study of the nature of chenical bcnds in crystals. 12v.All SSSR.
Naorg,nat. I no.10:1673-16S3 D 165.
49RA l8sl2)
1. Inatitut fl2iki t-verdogo tela i poluprovodnikov 2; BSSR,
Minsk. Submitted July 5,, 1965.

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SIBDT19 N.N.- OLMOMOVICH, N.M.- SMUM, A.U.
Matribution of electron density in si2dcDn. Dokl.AN BBER 4 no.4.-
144-147 IY 16o. (MIRA 13:10)
1, Otdel fiziki tverdoeo tela I poluprovodnikov All BSSR.
(Silicon)

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AUTHORS: Sirota I N No$ Academician of the S102016011321011:)421064
AS 13S R9 e hnovich, B. M., 33004/BO07
Sheleg, J77-L.
TITLE: The Determination of the Distribution of Electron Density in
PERIODICAL: Doklady Akademii nauk SSSR, 1960, Vol 132, Wr 1, pp 160 - 163
(USSR)
TEXT: The electron density distribution and its value at a certain point
~x, X, z,) Is determined by summation of'a three-dimensional Fourier series
1: . The number of terms in this series is limited by the number of experi-
mentally determinable reflections. The authors mention the methods which were
suggested for the purpose of further increasing the precision of the determi-
nation of electron density (extrapolation of the f-curvegintroduction of 9
temperature coefficient), and point out the errors arising in this connection.
They then explain their methodp which makes use of the value of the atomic
scattering factor, which may be determined by means of CnXfradiation as well
as'by less hard radiations. The authors divide the value of the scattering
factor into two parts with a density distribution Yi(`r) and ~2 (r), whereAl, (71)
corresponds to the density of the electrons near the atom and is describ by
Card 1/ 3

8 00 6?
The Determination of the Distribution of 2/020/60,'132/01/042/064
Slectron Density in Crystals B00000
2
the Gauss function -A exp(-J-r )If (r), on the other hand, corresponds
to the electron density of the outer eloo rons, which, in the case of high
reflection indices, cause only a slight change in the course of the f-curve.
Figure 1 shove the course of the f 1-curve and the f 2- curve for diamond, ihere
f - f1 = f2 . f 2 corresponds to the unknown density T2 of the outer electrons,
vhich inay thus be determined from the difference. For the electron density in
an arbitrary point of the crystal I ~ (P) = ~ I (?) + ~2 (1) -This equation is ex-
pamded into a series (6). Figure 2 shows the results obtained by calculating
the electron density for diamond in the direction [1119 according to the
method suggested and by means of a temperature factor at 7501JOK and 200C.
Figure 3 shows the calculation for the points 0, 0, 0; 01/8, 1/8, 1/8 and 1/2,
1/2, 1/2 according to both methods between 0 and 15000 K. There are 3 figures,
and 18 references, 7 of which are Soviet.
Card 2/3

80067
The Datermination of the Distribution of 3/020J60/'132/01/042/064
Jilectron Density in Crystals B004/13007
ASSOCIATION: Otdel fiziki tverdogo tela i poluprovodnikov Akademii nauk BSSR
(pepartment of the Physics of Solids and Semiconductora of the
Belorussian Academy of SciencesT-
SUBMITTED: JanuarY 5, 1960 ~K
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MOM
89737
S/020/61/136/003/025/027
B004/BO56
AUTHORS: Sirota, N. N., Academician of the AS BSSR, and Olekhnovich,
N. M.
TITLE: Electron Density Distribution in Indium Arsenide
PERIODICAL: Doklady Akademii nauk SSSR, 1961, Vol. 136, No. 3,
pp. 660-662
TEXT: It was the purpose of this Pork to clarify the factors to which the X
specific physi.cal properties of arsenides A11TBV-With sphalerite structiire
are due. This concerns the semiconductor properties, the markedly high
carrier mobility, and the great width of the forbidden band. The study
was carried out on a crystalline InAs (the synthesis is described in Ref.1),
which jas ground to fine powder (6 - 8p). X-ray diffraction patterns were
made at room t,mperature, and Cu Ka-radiation by means of a YK-150-0
(URS-50-I) apparatus. From the experimental data obtained, the follosing
was calculated: The square of the structural amplitude F2 and the atomic
scattering factors fIn and fAs- Herefrom, the distribution of the electron
Card 1/4

89?37
Electron Density Distribution in Indium S/020/61/136/003/025/027
Arsenide B000056
density was obtained. Fig. 3 shows the distribution in the unit cell of
InAs in the plane (110). Fig. 4 shows the same in the plane (110) and the
E1111 and [11fl . The results obtained are -
direction discussed. Special
attention is drawn to the "brid ell of the 6lectron density, which takes
its course in the direction [11)1" In the Interval 1/2 1/2 112 - 3/4 3/4 3/4,
attains a value of 0.20 electron/A5 at 5/8 5/8 5/8, and drops at the point
3/4 3/4 3/4 to 0.03 el6tron/A3. This "bridge" does not exis+ in germanium.
The "bridge" between the coordinates 000 and 1/4 114 1/4 in the direction
[111] was observed also in germanium, silicon, and diamond. The data
obtained will contribute towards clarifying the interatomic interaction
in InAs. There are 4 figures and 5 referencis: 4 Soviet and I German.
ASSOCIATION: Otdel fiziki tverdogo tela I poluprovodnikov A'kademii nauk
BSSR (Department of Solid-.state Physics and Semiconductors
of the Academy of Sciences BSSR)
SUBMITTED: September 16, 1960
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AUTHORS: Sirota, N. N., Academician AS BSSR, and Olekhnovich, N. M.
TITLE: Electron Density Distribution in Gallium Arsenide
PERIODICAL: Doklady Akademii nauk SSSR, 1961, voi. 136, No. 4,
PP. 879-881
TE,7%'T: The specimens used for the experiment vere purified by zone melting.
X-ray pictures mere taken by CuKa radiation at room temperature and
recorded by a YFC-50 (URS-50) recorder and a Geiger-MU'ller counter. The
line intensity zas calculated from data recorded by the automatic
potentiometer 96ri-og (EPP-09). The amplitude squares (P2) mere calculated
for three types of lines: (F2), (F2), and (F2). The atomic scattering
d I ni 2 s
factors f for gallium an arse c ion mere KIculated for given F2 (Fig.1).
Fig. 2 shops the logarithm of the atomic scattering factors as a function
2 2 2
of ~_hi. if :2h i >12 for arsenic and lih i ;>10 for gallium ions, 1n f
2
is a linear function of :Eh. . Fig. 4 shows the electron density
Card 1/5

88409
Electron Density Distribution in Gallium S/020/61/136/004//023/026
Arsenide B028/BO60
distribution among the ions Ga-As-Ga in the direction [1113(Fig. 4a), and
among GaAs ions in the direction [1133(Fig. 4b) in the (110) plane. In the
plane (110) between neighboring On ions and As ions in the direction
E111] , one finds "bridges" with increased electron density with a
minimum value of 0.49 el/A3 between the points 000 and 1/4 1/4 1/4.
Similar "bridges" are observed in S102, Ge. and InAe crystals. In GaAs
InAs, electron density almost vanishes in the direction Ell~ near the
points 3/4 3/4,.,3/4. In addition there are no "bridges" in GaAs in the
dire-.tion [113J , but an electron density minimum (groove) similar to
those found in Ge and Si crystals. For an electron density level of
0.5 el/A3, the ionic radius of Ga is 0.8 A, and that of As, 1.65 A. In
direction ~1-33 it is only 1.3 A for As. For an electron-density level
of 0.25 el/A3, Ga had an ionic radius of 1.3 A, while As had one qf
1.45 A. The following values were obtaine for InAz: for 0.5 el/P:
In = 0.9 A; As = 1.2-1.1 A; for 0.25 el/Ai: In - 1.5 A; As - 1.35 A.
There are 4 figures and 3 Soviet references.
and
the
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Electron Density Distribution In Gallium S/020/61/136/004/023/026
ArBenlde* 302812060
ASSOCIATION: Otdel fiziki tverdogo tela I poluprovodnikov Akademii nauk
BSOR (Department of Solid-state Physied and Semiconductors,
Academy of Sciences BSSR)
SUBMITTED., September 19,'1960
Legend to Fig, I: f1h 2 for GaAs (&)I atomic scattering factors (a)
fw As ions (1) and gallium ions (11) in GaAs.
Legend to Fig.'2: Inf - g:F-h2 in GaAs-for "As ions (o-o-o) and Ga ions
Legend to Fig. 4: electron density distribution in the directions E111] (a)
and *E113] (d) in the (110) plane of a GaAs unit cell; 1) el/A.
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AUTLORS: Sirota, N. N., Academician
TITLE: Density distribution
,magnetism in nickel,
PERIODICAL: Akademiya nauk SSSH.
2585o
S/020/61/139/004/010/025
B100209
AS BSSR, and Olekhnovich, N.
of 3d-shell electrons causing ferro-
cobalt, and iron
Doklady, v. 13.0, no. 4, 1961, 844-846
TEXT: Using the known form factors of neutron scattering the authors
studipd the distribution of those electrons in nickel, cobalt, and iron
causing ferromagnetism. Thq amplitude P of neutron scattering is determined
by the relation F - e 2rf S/mc2, where f denotee the unit form factor of rieutron
scattering, and S the effective quantum number. S is determined from the
maEnetic zoment of the element under examination: S = W2. The following
magnetic momenta were used in this calculation: 2.22 for Fe; 1.74 for Co;
0.60 for Ni. The fS values as calculated after data taken from R. Nathans
et al. (Phys, Chem. Solids, 10, 136 (191)9); Phyt). Rev. Letters, 2, 254
(1959)) are shown in Fig. I -To~ iron (curvo 1), nickel (ciirve 2), find for
cobalt (curve 3). By means of a three-dimensional Fourier expansion c)r Dy
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25850
S/ /020/61/139/004/0 10/025
Density distribution of 3d-shell B1041B209
an approximation it is possible to calculate electron density at any point
of a unit cell as well as the radial distributiot, of the 3d-electrons which
cause ferremagnetism. Fig. 2 illustrates the electron density 2a)
and the radia2. density of 3d-electrons in the three metals studied. The
graphs shom. that the electron density in all three metals attains a maximum
near the center of the nucleus. On the other hand, the radial electron
densities attain maxima at 0.44 1 for nickel, at 0.40 2 for iron, and at
0,39 R for cobalt (Fig. 2b). Furthe~c discussions on the basis of experi-
mental data about the azlitudes of atomic scattering (G. W. Brindley:
Phi.L~ llag-, 111 778 (1936 ) lead to the conclusion that the "magnetic"
electrons do not exert any essential influence upon electron density between
the nickel atoms. There are 4 figures and 4 references: 1 Soviet-bloc and
3 non-Owoviet-bloc.
ASSOCIATION, Otdel fiziki tverdogo tela i poluprovodnikov Akudemii nauk
BSSR (Division of the Physics of Solids and Semi conducto ro,
Academy of Soienoeo B33H)
SUBLITI TTED: 'ilay 8, 1961
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S/020/62/143/002/017/022
B145/B136
4! ~,Iember of the AS BSSR,
and O'Lekhnovich, N.-L.,
TITLE. Electron density distribution in aluminum arsenide at
20 and -1000C
AkaOei.-iiya nauk S6SR. Doi-Jady, v. 143, no. 2, 1962, 370 - 372
-:."'-T: In a study of euinpoun(13 it III BV, the Rtomic scattering- factors :,f
aluminun and arsenide ions in aluminum arsenide were determined. The
measurement and calculi-tion methods had been described earlier (DAN, 1361
no. 3, 66J (ia6i)). The samplen ~,rere obtained from the initial components
u,9in,,,, the two-temiperature method (evacuated quartz fimpoules, 650 and 11500C,
duration of synthesis 5 hrs). The arcenide crystals tere comminuted in
arjon aiti~r~o~-,phcre to it particle size below 15 - 2011- . The diagrams viere
plotted a / _ - 50 - (URS - 50 1) instrumenI.- with a Geiffer counter
and Cu K ., rp-diation in arL-1on atmosphere. A cold N2 jet was applied for
low-temperature measurements. Results show that the curves in the
Card 11_q

S/02 62/143/002/017/022
Electron density distrilution ... B145YB 138-
3
2
In f 'h- dit,gram approach a linoar courqo- no from h, ~, 12.
j j
The densit.~ distribution for this parz of electr2ns can therefore be
described by the GL%ussian curve ','1. A exp (-Ar4). The resulting data,
characterized by , I (See Table 1), show that, with a temperature drop,
ch"nUes in such a way that the height of the Gaussien curve grows near the
atomic center, wbereas the aispersion of the curve itnelf beuomes less.
The distribution in the outer part of the ions iB chnracterized by.'
~2'
f - f (.f being the experimental
which is determined by the difference f 2 - I
value of a*;omic scattering factors and f1 the value calculate4 from the
Gaussian distribution). On a temperature drop, f 2 grows both with Al and
with ;s. In other words, the electron density distribution changes in the
outer part of the ions. The analysis of electron density distribution
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S/020/63/146/001/013/032
B102/B166
-AUTHORS3 Sirota; N. N., Member of AS BSSR, Olekhnovich, N. H.
TITLEz Roentgenographic determination of the diamagnetic susceptibili-
ty of certain ion and semid6nductoi cow-pounds
PERIODICAL: Akademiya nauk SSSR. Doklady, v. 148, no. 1, 1963,' 71 73
'Th
TEXT: lattice magnetic susceptibility
~2- N I Of
is'represented as the sum of the diamagnetic (Langevin) component and the
paramagnetic (Van Vleck) component; M(j, i) is an off-diagoqal element of
the magnetic moment, E J_Ei the forbidden-band width, and Er~ the'sum of
i
the mean squares of the electron orbit radii. The first term can be de-
termined experimentally from the electron density~of the lattice, the
second from the amount that the electron density distribution deviates
from spherical distribution. These terms were determined.for the arsen-
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B10201631148100110131032
Rovntgenographic determination ... B102/B166
ides and antinonides of All GA, and In, and also for NaCl, KC1, GO and
2
Cu 0.
2 The calculations wer e made using a method by Sirota. (DAN, 142, 1278,
1962). The following main results were obtained from the X-ray messure-
mentiij
6 6
6
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-
-'O
_Z*
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;'O- -)q
A

mole
P d the
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Nacl 30.7 30.3 GaAs 51.2 32.4 1.4
M 41.1 39.0 InAs 71.9 55-3 ;, -64-V :0-47

cap
2
29.S 28.0
GaSb
65.9 1.
38.4 .--1-60-7' .0-77
CU
0 41.6 36.0 InSb 60.1 65.9 .77.2 0.20
2
For AlAs and AlSb Td was -47.4-10-6 and-56.6-1049JE was 2.2 ev 2nd
1.60 ev, respectively. The values of 4xp and Zd* tbeor are taken from
Busch and Xern, HeIv. phys. act&, 32, 24, 1959. The dependence of Xd and
)~ on the position of the component elements in the periodic system follows
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4CM91ON-1IR x AP3005435- -
--,S/0020/63/151/005/1079/1080
4
---- Sirota 14. N. (Academiclan); Cle".novich, N. M.
TITLEi Pa::-&magnetic component of the magnetic susceotibZlity f'of semi-
conductor compounds A SUP 3 B SUP 4 determined by X ray diffraction
a ----- - - -----
nalysis,
n
'SOURCE: KN SSSR. Doklady* 15L 0. 5, 1963,~ 1079-1080
VOPIC TAOS.: ~parapagnetic component of magnetic Susceptibility, s emi-
~conductor,-_-' raction a
-X-ray-'aif f -analysis- aluminum lli indium,
ju
-in$ pqrama~neIpic component, magneti,o susceptibility"
-!MMACT: An -experimental method for determining the paramagnet-ic
---icomponent-of magnetic ~ susceptibility by X-7ray-'dif fraction is developed
'further in' this
_paper.~ It was.applied~for determination of the shape,
:and dev:tation.from spherical~.symmetry.of tha,covaleint.,"bri ge " f' d
d s orme
,,by-,,Pl la,.trons. The- computationaL r~_sults for- the paramagnetic corn'
e
:::. mi-gallium, indium are
ponent for arsenides and ahtimonides of aluminu;
t! -ray diffraction-m
given., Au iors howed that X ethod.pe'rmits an in-
dependent determ,11-ination of the.dia- and'paramagnatic momen S-.1 . -0 1
Ce
of'~,A_olid state,plWsics: and somfconduc:~ors, Acadi scien, ~GSRI
ASS -D
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SIROT.A, akadenik., ovv. DWYM, Ya.G.,. prof., rea.;
OLMETIOVICH, N.M.. kand. nauk, reed.;
j.'Chemical bonds in semicond-actors and solids] ffiimiche-
:3kaia -7 pohiprovodni2kakh I tverdykb telikh. Minnk,
Nauka i teki'mika, 1�65. 366 p. (M'W J-8:7)
.L. Akademiya mvuk Minsk. Insti-tut fiz-kkl tvardogo
1
tela 1 poIupr,)vidn!kov.

1-7924-66-_~ Ir UA 2 A-Aw(h!
AP5027922 i SOURCE CODE ()36 1/010/167,3/16133.
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AUTHOW Sir6ta, It. N.1 Gololobov, -Yo. K.; Sh le A, U., OleklinovIch, N, M.
V 9
ORG: institute of Solid State Physics and Seminonductors, Academy of SciencesBSSR, Minsk
ffarr_ I -Mo pro OEM
(Insti 1zfZfVcr_.'vo_.e 1p0 naur
7ITLE: Potential snd limitations of the use of x-ray diffra, ction methods for studying the
nature of chemical. bonding tncrystal~
SOURCE: AN SSSR.. Izvestlya. Neorganicheskiye matertaly, v. 1) no. 10, .1966) 1673-1683:
TOPIC TAGS: x-ray diffraction analysis, neutron diffraction, eje=qn_deasWv. electron
diffraction anaTys ii~ chemical WE H-g, crystal structure analysis
ABSTRACT; Theoxperimental determination of electron density distribution In crystal,- In-
-ray scattering peaks, finding of structural
volves measurement of t1je intensities of x
amplitWes, calculation of the form factors of tons, reduction of the values obtained to abso-
lute zero temperature, and summation of three-dimensional Fourier series. Each of these
operations is, dismissed in detail. X-ray diffraction methods make it possible to give quanti-
tative experimental expressions to the wave functions of electrons in crystal lattices. Of
great significance VD the study of chemical bonding Is the possibility of'eBtimating the electron
density -distributiou over the electron shells. For example, the use of form factors obtained by
neutron and x-ray scattering has -permitted the determination of the distribution of all elec-
trons, including tbose with impaired spins, In the 3d shell in the lattice of ferromagneetics and
Card 1/2 UDC: 541,57:548.19
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ACC NRt AP502-7-9291-
antiferromagnetics. Howeverl X-ray-, electr o*n-.. and neutron-diffraction methods Yeannot as
yet solve problems Involving electron distribution at low dennities or when the'density changes
are slight (not excoeding 0, 02 - 0. 05 elfti,3). For example, It is not possible at the presents
tirtie to determine by, x-ray diffraction the number of electroas which migrate from the
valence band to the conduction band under the influence of thermal motion or photo-electric
effecta In semiconductor crystals. Despite such limitations, these methods are of paramount
importance for studying electron density distributions in crystals. Orig. art. has: 7 figures.
SUB CODE 8Sj G"'ef IC SUBM DATE: 05Jul65 ORIG REF,. 019 OTH REFt Oil
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Yu. D., Parshin
AUTHOR:.,,.- Olekhnovich, N. M.; Anufriyev., A. Ya.
ORGr ..,none.
TITLE Eleventh conf orence 1)n low-tc~mperature phys J. c
SOURCE: Uspekhi Sizicheskikh nauk, v. 87., no- .4, 1965, 723-730. 21~
TOPIC TAM. physics conference, 'low tillml-jorature physics, i3UP'n-rconductivit'v,
cryogenic. engine ering, the modynaml c s, liquid helium, solid stato beat
conductivity, superfluidity, current density, magnetic field, magnetoresistance,
,crystal anisotropy., thermomagnetic effect, thermal emf
ABSTRACT'. -The Eleven~th_All--Union Conference on Low-TemDerature. Phvsics was held
Acautimz 01 0Q.1ullcub 1-7-QM,41 oune Lnrol I OU17 IV04- more Lnan 4~." aeleEaze5J
."IcluuJ-11r, ~-Vjjrco~ffa_tives of ainost, ns in tbeiSoviet Union which
14, 5' _-11l the organizaito
.
41 ~
are conducting Icy-temperat-arb rosearch, and scientists from,Bast Gerinany, Foland,
Czzec~os'lovakia, 11'ulgaria, Bungary, wid Yugoslavia, vere present. The nore than 10D
papers presented. Ldealt with the properties-of _ elium '~uperconductlvlty, the physical
properties of cor;densed medip, low-temperature thermodynamics,, crXogenic_en&jn2erir
and other problems.. The chairman of the ---cientifie Council on L0111 Temperatixe
PhysicsN. Ye-. A]. dl.5cus3ed the state-of-the-art in low tei~p_eratlxe
physics and remarked. on the fruitfulne3a of conferences In -the area as we!).
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as the necessity for further coordina tion of th e-silb-je-c"fis, bifiij i5ivesitigated.'."~
A group of Georgian physicists (R.-,& Bablidz G. Gudzhabid&e, and,
1-4 S. Tsakadze), working under the direction of Adademician-L- 1,
jD?.
Andi-onikas ~reoented a review on the phime transition In rotating
Iiquid helium The first part of their paper was. concerned with the re-
;ldxation of 4~~U-n eddies. , The second part dealt, with the generatiompf
'vomce3 during the cooling of rotating He belc;w the ),-point, It was
determined that during rotation of He U with an argular velocity corres-
-ponding to the maximum. of the vortex damping, the. disappearance of
!vortices during transH. on over the, X-point proceeds very slowly. The. time
T To I exp
iof the formation of vortices was shown to be
--where wo is the critical angular velocity for a given vessel, w is the.
C
aligular 7elociity of rotation, T % M sec. and a VS, li, 18 Bee It Was
~Iso determined that the inner sui-face of the rotating glass does not. exert
ahy influence on the formation, ofthe -vortex filaments. G. A. Gamtsemlidze reported
on results of iwa.-;urements of the damping of torsional -vibrations of a disk in He 11
after the stOPPIM1.1 of the rotating liquid* -.jDiar'kDV pbyvioists 1. V. Bogo avlens-Id7,
N. G. Bereznyak, imd B. N. Yesellson reported on an investigation of the state hO-
He4 mixtures. They established that in a pressure -range from 50 to 140 titin the
diagram represent-Ane the state of the He3- He4 mixture is of peritectic type.
L. P. MCzho g1 Ln reported on the thermal eonductivity of solid IE64 (whooepropertie
are being intensiv-ely studied. In Mo*cow) In a temperature range from 0.5 to 2.5.'K anl
c,,.d 2/1
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pre6bures up to 185 atm.-The mAximun, valueo.for th3rPtal conductivity were apprwd-
ri~tely three times higher than the beat resulta obtained previously, which sttenbB to
the high quality_-f the crystals investigated., R. 1-1. Gurzhi discussed his theory
'describin' th-- de., 1' d ' ce of theirmal conducti ty of such brystals on
e n en
A e 4
emperature. . Kapitsals jump on theP
_~~er boyndary vas also.
surveyed in this work. The superfluidity of the 11gliVisotope HC3
'treated in a reports by 1, P. P eshkov., In experiments with three-staged
I magneuc cooling of a block of paramagnetic salt., having liquid He 3 in its
-1pores, Peshkov showed that at a temj~6rature of 0. 0055'k the s.pec ific heat
of He 3 has a maxi-mum. Such behavior of the specific heat Is attributed
to"the phase transition of ne3 into a new state. ~A ratheir large-hiimbbr bf_~apers was
devoted to ~spperconducbivity. N. B.Alrandt and N. 1. Ginzburg investigated the
influence ofNigh pressures (up__t_o___3T,-6_U ntpt) on the suuerFonductivity properties of
various metals--4"-7i-f-.--no-nTr-ansi~,jit me~al-q (~Cd
Sn In I lisplay a, decrease of Tk when
ses, vbi-le d1l./dT jj'.jjjt~'j
.the, pre sure d~(Ye,.t ,, 1Tk 1-0 s oiiVanb, thus indicating
that the denaity of states N(O), on tkie 'r IA
erini surface Is. -c-on-stant.
decrease of Tk at N(O) = const can be linked -with a decrease of th-z
ielectron-phonon interaction parameter.in the microscopic theory of super-
rconductivity, An6ther mechanism ap takes plaze in the tran0ittion.
parently
~Metals. (Zt, TD i~ Here, "Increaa e. In dHk/ dTk th
- I - - 1 .0 Tk and Tj w en e
pressure increases can beobserved. It can thus be concluded -that N(O)
increases when th-6 pressure increases* T. Ignat' yev Ia, B. G. Lazar V~
Card JP

13632-66
ACC. NRi AP6001670
-1. S. Lazare-va. arid. X. I. 14akarov.reportel on thp infl ence of Impurities
C3, )A- the
Bi _ ~ on variation of Tk in tAh '-' launder pressure, and on the
IdiepenFeAFrSf the pressure effect on the i!~o_n ration and valence of impurity
atoins. They found that the effect of preasure at a 5ufficientl7,large concentration
becomes negative irdependently of.the kind of impurity. 12.~chR~ov, I. N. Goncharov,
M. Litominsidy,,I. Ruzhichka, and 1. S. INikhareva measured the criticaf cur-rent
elds o4 -80% Zr-w
densities in lar magne 1c7T1 Ves subjected to different 'thermal
.treatment. A. i. RusinQv and 'Ye. A!f povai-a-rhssed the dependence of the enerZy
r the depth to- -a magnetic field pein_~ttates'
ga~~ df'6L superconduct6 and- 0
:Wv, it on the magnitude of the field in the case of the mirror reflection of
'electrons from the surface of metals. The extreme cases of absolute zero
S CIOS
:and temperature e to Tk were investigated for Pippard and London
;supei-donductors. Also obtained for Pippard metals (X2
were
2 T
formalas for a temperature -range, not too cloEeto T N " 1 ` "