SCIENTIFIC ABSTRACT PENIN, N. - PENIZOV, N.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001239920009-6
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: June 15, 2000
• Sequence Number: 9
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

ElectronIcs - Transttors
card 1/1 Pjb. 89 20/40
&1thor-3. -1 P
enin., N.
Title -1 P~inciples of physics underlying the operation of crystal triodes
(trans~tors),
ftriOdicgl 1,Radio 10, 27-28 Oct 1954
Abstract The phys.ics principles and characteristics of crystal triodes are
described. Two types of triodes are examined.* The (n-p-n) and the
(p-n-p) types. TheIfunctional relationship between the amplifying
propertiep of tranq~;Ltors and their frequency-characteristics is
analyzed. Diagrams.
Institution: . .....
-Submitted::

- ------ -------
USSRA'hydics Semiconductors FD-3118
Card 2.11 Pub. 153 - 17/24
Author Kalashnikov, S. G.; Penin, N. A.
Title Influence of frequ ney upon the rectifier properties of semiconductors
diodes in the case of small variable voltage
Periodical Zhur. tekh. fiz., 25, No 6 (June), 1955, 1111-1123
Abstxuct The authors show that the frequency dependence of rectified current
in semiconductor diodes with high degree of ionization of admixtures
and considerable electrical conductivity of the semiconductor which
are operating at small alternating voltage can be explained by the
existance of a capacitance of electron-hole transition due to both
injection of charge carriers and also displacement current. They
obtain simple expressions for the limiting frequency and frequency
dependence of rectified current for various regimes of operation, and
consider the influence of the characteristics of the semiconductor
upon the frequency properties of the diodes. He thanks V. L. Bonch-
Bruyevich for discussions. Five references, including two USSR:
A. 1. Gubanov, ZhTF, 22, 1952 and 23, 1953-
Institution
Sutmitted February 15, 1955

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L~

109-8-10/17
AUVIOR: Penin, X.A'.
,TITLE: '__if'fect -of the Recombination Velocity of a Non-rectifying
Electrode on the Frequency Characteristics of a p-n
Junction for the Case of Small AC 'Voltages.
(Vliyaniye skorosti rekombinatsii u ney
,yRryamlyayushchego
elektroda na chastotnyyesvoystva p-n-perekhoda dlya
sluchaya malykh peremennykh napryazheniy)
PERIODICAL:- Radiotekhnika i Blekt.Tonika, 1957, VoI.II, Nr 8,
pp.1053 -1061 (USSR)
ABSTRACT: A p-n diode, as shown in Fig.1, is considered. It is
assumed that the hole region is unlimited while the elec-
tron region has a thickness w . A non-rectifying elec-
trode, having a bole recombination velocity S is
situated at the second boundary of the electron region.
The hole region has a much higher conductivity than the
electron region and the lifetime of the holes Z in the
n-region is-of the same order as the lifetime of ~he
electrons 'C n in the p-region'. This assumption is
normally true for germanium junction diodes, in which it
can be assumed that the whole current is due to the holes.
The basic equation of the s_Ystem is given bv exDression 3:
Card 1/3

109-8-10/17
Mfect of the Recombination Velocity of aWon-rectifying Electrode
on the Frequency Characteristics of a p-n Junction for the Case of
Small,AC Voltages.
Graphically these formulae can be represented as a function
of w or frequenoyp as shown in Pigs, 4, 5 and 6. From
the above results it follows that for small base widths
the recombination velocity has a considerable effect on
the magnitude and thefrequency dependence of the capaci-
tance and resistance of a p-n junction. A decrease in the
base width and an increase in the recombination velocity'
*ts an improvement in the frequency characteristics of
perm-
a sem&oqDJId%ibtor diode. There are 6 figures and 3 refer-
of which are Slavic'.
encesy 2
FebraaTy 20t 1957.
ILABLE,: Library of Congress.
AVA
dard 3/3

109-9-13/15
A:(JTHORS:Penin, N.A-, and Yakunina, K.*V
TITLE: -re-P-e-ndence of--the Capacitance and Resistance of Alloy
Junction Germe-rium Diodes -Pn the Frequency and the Positive
Bias OuiTent (Zavisimostlysakosti i soprotivleniya splavmykh
germanievykh diodov ot ch6stoty i toka polozhitellnogo
smeshoheniya)
IMRIODICAL: Hadiotekhnika i Elektronikap 1957, Vol.lIt Nr 9,
pp'.1200 - 1210 (USSR)
ABSTRACT: It is ass=ed that the equivalent AC circuit of a p-n
junction can be represented by a series resistance, r I
followed by a resistanceg R(w) 'in parallel with a capaci-
tance CD (my- and C 3 where- C D is the so-called diffusion
capacitance'and C 3 is the capacitance of the barrier layer.
IL 0 and C are given by (Refs'.1 and 2)
D
+
Card~ 1A

109-9-13A5
'Dependence of the Capacitance and Resistance of Alloy Junction
Germanium Diodes on the Frequency and the Positive Bias Current.
+ T (2)
4, 1
C3 C30 Ii in I + 2 (3)
"K (-rS 1)]
where. m is ~T # is is the saturation current, I is
the positive biasing current# T is th 'e lifetime of the
holes and V is the angular frequency. Y. is expressed
by Eq`*(4) where pr is the hole concentration in the p
region and n., is the electron concentration in the n
region and n i is the concentration of electrons or holes
in ga=anium'. From Bqs-. (1) and (2) it Is shown that
Card ?A

109-9-13/).5
Dependence of the Capacitance and Resistance of Alloy Junction
Germanii, Diodes on the Frequency and the Positive Bias Current.
a(I + is) -i P (9)
V2~
from which it is possible to determine the lifetime T at
a given I if.the function D is known~, The above
lyr
theoretical formulae were checked experimental . The
following measurements were made: (1) impedance of the diode
as a function of frequency at I =.oonst (Pigr.5), (2) relat-
ionship betqeen'the real and imaginary components of a p-n
Junction at' w = const -(Fig.6), (3) total capacitance of
the diode aq a function of frequency for various biasing
currents (see Figs.7 and 9), (4) resistance as a function
of frequency for various biasing currents (see FigB'.8 and 9),
(5 ) resistance and capacitance as a function of I, for
various resistiviti-ea of,the diode material (Figs'.10 and 11),
function C as a function of I for various types of
, FD
Card 3A I R

109-9-13/15
Dependence of the Capacitance and Resistance of Alloy Junction
Germanium Diodes on the Frequency and the Positive Bias Current.
diodes (Fig'.12) and (7) the relationship between R and the
total capacitance C for various I . It was found that
the measured results are in very goo& agreement with the
experimental values.
There are 13 figuresl 1 table and 4 references, 2 of wh1oh
are Slavio.
SUBMITT6i February 20, 1957'.
AVAILABLEt Library of Congress.
Card 4/4

AUTHORS: Penin, h-A. and Skvortsova, B.Ye. 109-3-2-15/26
TITLE: Impedance of the Rectifying Junction of Germanium and
Silicon Detectors at Mtrahl&7 Frequencies (Polnoye
soprotivleniye vypryamlyayushchego kontakta germaniyev kh
v.~
i kremniyevykh detektorov na sverkhvysokikh chastotakh
PERIODICAL: Radiotekhnika i Elektronika, 1958, V0211, No.2,
pp. 267 - 275 (USSR).
iLBSTRACT: The impedancc was measured by two methods. In the
first method, the impedance was determined by measuring the
high-frequency impedance, t In the
,q&ik detector (see Ref.1).
second method, a special/compensating transformer was emDloyed.
The transf ormer , tuned to a given wavelength in such
a way as to obt * ~,ransformation ratio equal to unity, was
connected at thpAie Tetector holder,. The tuning of ijae trans-
former was also arranged in such a way as to compensate all
the reactive elements of the equivalent detector circuit.
Under these conditions, the load of the coaxial line was equal
to the impedance of the rectifying junction plus the series
resistance of the semi-conductor wafer. The trimming of the
transformer was done by means of three detector cartridges.
The measurements were carried out at wavelengths ranging from
Cardl/3 30 to 6 cm by means of a coaxial line having a wave impedance

109-3-2-15/26
ImDedance of the Rectifying Junction of Germanium and Silicon
Delectors at Ultrahigh'Frequenci6s
of 50 9 The investigated detector was situated in a coaxial
holder and the capacitance and resistance of the rectifying
'I
-Layer were determined by measuring the real and the imaginary
components,, x and y I of the rectifying junction impedance.
The positive biassing currents employed in the investigations
were in the range from 0 to 20 mA. The results are given in
Figo. 1, 2, 3, 4 and 5. The curves of Fig.1 represent x and
y components for a germanium detector having a soldeied point
contact and a resistivity of (-3 = 0.006 gem as a function of the
biassing current I ; Curve 1 was taken at a wavelength
X = 6.12 cm, Curve 2 at X = 21.2 cm. and Curve 3 at X = 30 cm
Curves of x and y as a function of I , at X 6.12 cm,
are shown in Fig.2 for the followin val es of 1)
2) 0.02 gem and 35 -,u 0.2 gem. '3
0.006 gem Fig sho~vs
the same parameters as in Fig.2, except that the measurements
were made at X = 30 cm. Values of x and y as a function
of I for a germanium detector fitted with a pressure-type
contact are shown in Fig.4, while similar curves for a silicon
detector type j:~K-~2 are given in Fig.4. Theoretically, the
impedance of a semi-conductor junction can be represented by
Card2/3 the equivalent circuit shown in Fig.6, where R, C D and C I can

109-3-2-15/26
Lopedance of the Rectifying Junction of Germanium and Silicon
Detectors at Mtivehigh Frequencies
be expressed by Eqs.(l), (2) and (3), respectively; in
these equELtions, S is the area of the contact, e is the
permittivity of germanium, V is the donor concentration
in the n-reGion, (pl, is the gontact potential difference
and
Co = S Yd
he,
WK
An analysis of the above expressions and a comparison nith
the experimental results show that the theory is in good
agreement with the measurements. The theoretical and experi-
mental results are compared in Fie.?. There are 7 figures,
1 table and 4 references, 3 of which are Russian and 1 English.
PUBMITTED: May 28, 195?
ILVAIIABLE: Library of Congress
Oard3/3 1. Germanium-Detectors
Measurement
2. Silicon-Detectors 3. Impedance-

GOV-109-3-4-12/28
.A'LJTHORS:.Penin_, N,-A,., Rusin, F. S. and Skvortsova, N. Ye.
TITLE: Input Impedances of Germanium and Silicon Detectors at
Centimetre Wavelongths (Vkhodnyye soprotivleniya german-
iyevykh i kremniyevylch detektorov v diapazone.. srantimet-
rovykh voln)
PERIODICAL: Radiotekhnika i Elektronika, 1958, Vol 3, Nr 4,
PP 543-546 (USSR)
ABSTRACT: It is assumed that the equivalent input circuit of a
rectifier diode can be represented by a parallel input
capacitance C. , 4 series inductance L and an RC circuit
representing the impedance of the rectifying junction. The
elements On and L reDresent the inter electrode capaci-
tance cand the whisker inductance of the detector, and they
are independent of the currents passing through the detector,
The jwiction resistance R and the capacitance C D Plus
Cz (see Fig.1) are functions of frequency and the biasing.
Card 1/3

SOV-109-3-4-12/28
Input Impedances of Germanium and Silicon Detectors at Centimetre
'Wavelengths
currents passing through the junction. The overall input
impedance of the detector is expressed by Eq.(l). The
elements R, 0 D and C z are expressed by Eqs.(2) and (3),
where
C S 6 q"d
zo
~Pk
=8
is the charge capacitance in the absence of an external
bias, S is the contact areal (pk is the contact potential
differenee, I is the current passing through the contact,
Is is the saturation cur-rent of the junction and T, is the
effective lifetimes of the charges. Bq.(l) can be used to
constr-act the impedance locus of the dotector. The result-
ing impedance circle is expressed by Eq.(4); the centre of
the circle is given by the coordinates expressed by Eqs.(5)
and (6), while the radius of the circle is determined from
Eq.(?). Eq.(4) was used to construct the impedance loci
Card 2/3 for a germanium detector having a resistivity of 0.006rLem

OOV-109-3-4-12/28
-Input Impedances of Germanium and Silicon Detectors at Centimetre
Wavelengths
for wavelengths of 21, 6.2 and 3.2 cm. The resulting curves
are shown in Fig.2. The impedances of the same detector
were measured experimentally and the results are also plotted
in Fig.2. It was found that there was a good agreement be-
tween the calculated and the experimental results. Eqs.(l),
(2) and (3) were used to determine the frequency dependence
of the detector input impedance and the resulting curves are
shown in Fig.3. The author expresses his gratitude to
S. G. Kalashnikov for valuRble advice and constructive
criticism. The paper contains 3 figures and 4 references,
of whicla 3 are Soviet and 1 English.
SUBTAITTED: May 28, 1957
1. DeTectors (RF)--Impedance 2. Impedance--Measurement
3. Germanium--Applications 4. Silicon--Applications 5. Mathematics
---Applications
Card 3/3

AUTHORS: Penin N.A. and Cherkas, K.V. SOV/109-3-12-8/13
TITIE: -I~luence of Recombination in the Non-rectifying
Electrode on the Characteristics of Alloyed Germanium
Diodes (Vliyaniye rekombinatsii u nevypryamlyayushchego
elektroda na svoystva splavnykh germaniyevykh diodov)
PERIODICAL: Radiotekhnika, i Elektronika, 1958, Vol 3, lir 12,
pp 1495 - 1500 (USSR)
ABSTRACT: The results of an experimental investigation of the effect
of the second electrode on the basic properties of alloyed
diodes of variable base thickness are reported. The non-
rectifying electrode in this experiment was either in the
form of an alloyed tin contact or was formed by a thin
layer of copper on the surface of germanium. The investi-
gations were carried out on alloyed germaniam-indium
diodes in which the diameter of the rectifying contact
was approximately equal to the diffusion length of the
minority carriers. The thickness of the base was such
that w/L varied from 2 to 0.1; w is the base thickness
whl.le L is the-diffusion length. For each ratio w/L ,
a zam$er of samples were investigated; these were f itted
with the two types of contact. The saturation current
uardl/4 of the diodes was measured as a function of w/L for

SOV/109-3-12-8/13
Influence of Recombination in the Non-reetifying Electrode on
th-i Characteristics of Alloyed Germanium Diodes
seve,ral values of the hole diffusion coefficient D and
recombination velocity 3 . The results are shown in
FigiLre 1. Here, the black dots on Curve 1 correspond to
the diodes with copper electrodes, while the small circles
on Curve 2 relate to the diodat with tin electrodes. The
dep6ndence of the diffusion capacitance of the diodes on
the base thickness is illustrated kfor both types of
the contact) in Figure 2. The frequency dependence of the
diffusion capacitance and thbe resistance of the diodes
is 1*11ustrated in Figures 3 and 4. The curves of Figure 3
were taken for w/L = 2 w/L = 0.3 (with a tin
electrode) and for w/L 0.3 with a copper electrode;
the resistanceBof the same diodes are shown in Figure 4.
The frequency characteristiu'-s of the diodes can be
xrepr -esented by the so-called critical frequency, which is
defined as the frepency at which the value of the
rectified voltage kwhen employing the diode as a detector)
was reduced to half, in oomprison with the low-frequency
value. The measurements of the critical frequency were
(;ard2/4 effected by the circuit of Figure 5. The resulting data

SOV/109-3-12-8/13
InfluelLce of Recombination in the Non-rectifying Electrode on
the Characteristics of Alloyed Germanium Diodes
were used to determine the lifetime 'r of the minority
carriers in the bulk of the semiconductor. These lifetimes
are shown in the table on p 1500 for both types of the
electrode, for various values of w/L . The experimental
results obtained in this work show that at small base
thicknesses, the properties Of p-n junctions depend on
the recombination of non-eauilibriuk current carriers in
the non-rectifying electro e. In particular, it Was shown
that the saturation current of the diodes increases with
decreasing w t if the recombination velocity in the
second electrode is S ),D/L and decreases if S < D/L
It was also found that the capacitance and the resistance
of the diodes become less frequency-dependent if the base
thickness is reduced. The authors express their gratitude
to S.G. Kalashnikov for valuable advice and to A.N.Kovalev
for help in the measurements.
uard 3/4

SOV/109-3-12-8/13
Influence of Recombination in the Non-rectifying Electrode on
the Characteristics of Alloyed Germanium Diodes
Thexe are 5 figures, 1 table and 7 references, 4 of which
are English and 3 Soviet.
SUBMITTED: MaY 5. 1958
L;ard 4/4

PENIf4l
9(4) 24(6)~_._ PHASE I BOOK EXPLOITATION SOV/1765
-Vsesoyuznoye nauchno-tekhnicheBkoye obshchestvo radiotekhniki I elek-
trosvyazi
Poluprovodnikovaya elektronika (Semiconductor Electronics) Moscow,
Gosenergoizdat, 1:959. 222 p. 13,950 copies printed.
Ed-. :
V.I. Shunshur; Tech. Ed.: K.P. Voronin.
PURPOSE: The book Is intended for engineering and technical personnel
working with semiconductl-lor devices.
COVERAGE: The book is a collection of lectures delivbred at the All-
Union Seminar.on Semiconductor Electronics In March 1957. The
semina:r was organized by the Scientific and Technical Society of
-Radio Engineering and Electrical Communications imeni A.S. Popov.
The authors of the lectures have attempted to systematize the basic
information on the operation of semiconductor devices. The articles
describe the operation and characteristics.aof.crystal diodes and
transistors and discuss their application in Various low-frequenoy,
high-frequency and pulse circuits. No personalities are mentioned.
References appear at the end of each article.
Card 11T

Semiconductor Electronics SOV/1765
TABLE OF CONTENTS:
Foreword
Ye.I. Gallperin. Basic Physical Concepts
the author discusses the physical aspects of semiconductor ma-
terials. He describes the atomic structure of the various ele-
ments and presents a discussion of energy levels in metals'and
dielectrics. There are 13 Soviet references (including 4 trans-
lations). L
.N.A._R_eDjn_ Electrical Properties of Semiconductors
The author gives a brief description of semiconductors, such
as selenium, tellurium, and germanium. Particular attention is
paid to the atomic structure of germanium crystals and to con-
afiction in crystals with and without impurities.
N.Ye. Uvorteova. Somiaonductor Cryotal Diodes
The author discusses the construction and operation of point-
contact and junction-type crystal diodes. She also presents
methods ofMaking rectifying contacts and describes the effect
Card 2/7
3
5
25
32

Semiconductor Electronics
SOV/1765
of temperature on diode operation. There are 2 Soviet references
(including I translation).
Ya.A. Fedotov. Triode Transistors 42
The author briefly discusses the theory of junction-type and
point-contact transistors. Chief attention is given to the
theoretical and operational aspects of junction-type transistors.
The author discusses the characteristics of junction-type triode
transistors and describes the effect of frequency on transistor
parameters. He also describes transistor power amplification and
discusses methods of obtaining high operating frequencies. A
brief descrIption of junction-type tetrode transistors is also
presented. There are 7 Soviet references (including 5 transla-
tions).
Ye.I. Gallperin. Triode Transistor as an Amplification Circuit
Element 87
The author discusses the construction, operation and applica-
tion of triode transistors. He describes various methods of
transistor-connection and gives expressions for equivalent cir-
cuits and transistor parameters. There are 6 Soviet references
Card 3/7

Semiconductor Electronics
(-including 1 translation).
SOV/1765
V.I. Gevorkyan. Stabilization of Power Supply Circuits of Triode
Transistor knplifiers 105
The author discusses methods of stabilizing the operation of
bias circuits and describes an analytical method of calcula-
ting transistor performance. He also presents a graphical
method of determining the quiescent point and discusses tran-
sistor circuits with automatic bias. There are no references.
A.G. Fillipov. Direct-coupled Amplifiers 117
The author describes the operation of d-c transistor amplifiers
and discusses their operating characteristics. He also describes
methods of stabilizing transistor operation by using 'negative
feedback, balanced and bridge circuits. There are 10 references
of which 1 is Soviet and 9 English.
YU.I. Konev. Triode Transistors in Amplification Circuits of Servo-
mechanism Systems 132
The author discusses the application and operation of transis-
tors in servomechanism circuits. Emphasis is placed on a dis-
Card 4/7

Semiconductor Electronics
SOV/1765
cussion of servomechanism transistor components, such as a-e
amplifiers, modulators, and phase-sqnsitive amplifiers.' There
are ~ references of which 6 are Soviet (Ancluding 1 transla-
tion , and 1 English. I
A.A. Kulikovskiy..,High-frequency Transistor Amplifiers 151
The author discusses equivalent circuits of high-frequency
transistor amplifiers and describes methods of calculatIng
their parameters. He describes the operation of interstage
resonant circuits and examines the effect of feedback in tran-
sistor circuits. He also discusses transistor stability, sta-
bilizing networks for the internal feedback in transistor' cir-
cuits and the noise factor. There are 15 references.of which 3
are Soviet, 1 German and 11 English.
T.M Agakhanyam. Transient and Frequency-Phase Characteristics of
~ Junbtion-type Triode Transistor 173
The author discusses transient, frequency and phase character-
istics of jimation-type triode transistors. He also derives
expressions for transfer functions for various types of tran-
sistor connections and describes the equivalent circuit for high
Card 5/7

Semiconductor Electronics
SCV/1765
frequencies for a junction-type triode transistor. There are 8
references of which 2 are Soviet (including 1 translation), and
6 English.
T.M. Agakhanyan. Triode Transistor Video,kaplifiera 187
The'author di8cusses,linear and nonlinear distortions In tran-
sistor vidoo amplifiers and describes circuits with complex
feedback and current distributing networks. A brief discus-
sion of multistage amplifiers is also presented. There area 2
references, both Soviet.
B..N. Kongz)ov. Trigger and Relaxation Circuits Using Junction-type
Triode'Transistors 197
The author describes the operation and characteristics of Bym-
metrical triggers and multivibrators-using junotion-type-tran-
sistors. He also discusses their stability and derives expres-
sions for calculating transistor bircuit performance. There are
4 references of which 3 are Soviet ahd 1 English.
G.S. Tsykin. Transistor Inverter of D-C Voltages 208.
The-author discusses the operation and characteristics of in-
card 6/7

Semiconductor Electronics SOV/1765
verter circuits using transistors. ,Special attention lsjgiven
to the operation.and design of inverter circuits with a signal
generator. There are no references'.
B.N. Kononov. Voltage.Stabilizers Using Semiconductor Devices 215
The author discusses voltage stabilizing circuits using sili-
con crystal diodes and transistors. He also explains equations
for series and feedback stabilization and discusses transistor
stabilizing; circuits with temperature compensation. There are
4 references of which I is Soviet and 3 English.
AVAILABLE: Library of Congress
JP/sfM
5-26-59
Card 7/7

IPTJWOV, Ya.A., otv.red 4ALIPERIN, Ye.I., zamestitel' otv.red.; BARKANOV,
N.A., red.; BEAG2LISOH, I.G., red.; BROYDR, A.M., red.; KAIall-ETSKIT,
Tu.A., red.; KAUSOT, S.F., red.; ERASILOT, A.V., red.; KULIKOVSKIT,
A.A., reld.; NIKCLATBVSKIT, I.F., red.;,_- IN, N.A., red.; STKPA-
0. I.P., red.; VOLKOVA. I.M., red.: A.A., tekhn.red.
(Transictor devices and their applications; collection of articles]
PoInprovodnikovye pribory i ikh primenenie; abornik statei. Moskva.
Izd-vo "Sovetskoe radio.m No,4. 1960. 423 P- (MIRA 13:5)
(Transistors) (Electronic circuits)
-A

84620
S/181/60/002/010/050/051
31 A6 0 j /3.3 B01 9/13056
AUTHORS: Belova,, N. A., Kovalev, A. N., and Penin, N. A.
TITLE: The Effect of Carrier Production in the Blocking Layer
..ch of the Volt-ampere Characteristic
Upon the Inverse Brkn J.
of Germanium
PERIODICAL: Fizika tverdogo tela, 1960, Vol. 2, No. 10, pp. 2647- 2654
TEXT: The authors investigated the effect of carrier production in the
blocking layer of the p-n-junction of germanium diodes upon the reverse
current. In the first part of the paper, the carrier production in the
blockingLlayer estimated, after which the authors discuss the inverse
J.B
branch of thevolt-ampere characteristic of germanium diodes with nickel
impurities. Finally, the volt-ampere characteristic of germanium diodes
with a very low resistivity is discussed. The authors summarize their
results as follows: The carrier production in the blocking layer of a
p-n-junction may significantly influence the shape of the inverse branch
of the volt-ampare characteristic, if impurities with deep levels are
Card 1/3

84620
The Effect of Carrier Production in the 8/181/66/002/010/050/051
Blocking Layer Upon the Inverse Branch of B019/BO56
the Volt-ampere Characteristic of Germanium Diodes
introduced into the germanium. By a decrease of the volume lifetime in
germanium, not only in low-ohmic, but also in the case of high-ohmic
germanium diodes an influence of the generation current upon the volt-
am'ere characteriatic was found to occur. Here the condition is that the
P
thickness of the blocking layer is of the same order of magnitude as
the cliffuBion length of the minority carrier. Ir diodes produced from
pure indium melted in germanium and nickelv the production exerts no
significant influence upon the reverse current. This is explained by
extraction of nickel from that crystal region in which the blocking
layer is located. This extraction sets in during the melting of indium
as a consequence of diffusion of nickel in indium. For all investigated
germanium diodes with a resistivity lower than 0.01 ohm.cm, a consider-
able change could be found: the reverse current increases with a do-
crease of resistivity and is practically independent of temperature.
In the direct branch of the volt-ampere characteristic a considerable
increase of the clarrent could be observed at low voltages. This was
explained by the tunnel effect in the p-n-junation. The authors thank
Card 2/3
Ca,rd 3/3

BOGOMOIA)VA., L.D. [translator); CHEPEIZVA.9 I.V* ltranslator3; PENIV, N.A.,
red.; MLVKOVAj, Ye,I., red.; BELEVA., M.A., iBkhn.red.
[Electron spin resonance in semiconductors] Zlektrormyi spinavyi
rezonans v poluprovodnikakh; sbornik statei, Moskva, Izd-vo
inostr.Ut-ry, 1962.. 380 p. Translated from tl~t English*
(Semiconductors) - (MIRA 15:5)
(Paramagnetic resonance and relaxationY

#:4r.I
EIIJO/E'463
AUTHORS. Anufriyov, D.F., Doldinov-91ciy, S.D., Zhurkin, B.G.,
1EopXlovA1ciy, D.D., Penin, N.A.
TITLE: Transistor current regulator for electronsagnets
PE11IODICAL: Pribory i telthnika eRsperimenta, no.1, 1962, 129-131
TFM A c1nasical curront regulator is describe6using
transizitor circuitry for stnbilizing currents 0 to 30 A for
electromagnato used in physical exporintanta, The voltage
refererico is the drop acroaa a tuanganin tape in an oil bath,
cooled by circulating water. This voltage drop is compared'with
that from a dry battery. The stabilization faotor per OC is
3.03 x 104. The bandwidth of the regulator ia 20 kc.
There are 2 fi&uros.
ASSOCIATIONs Fizicheskiy institut AN SSSR
(Physics Institute AS USSR)
SUBMITTED: may 8, l.961
Card 1/1

L-06430-6 7 . MffW11D
JP (c) JD
ACC-W,-7 AP60267M SOURCE CODEt UR/OIBI/66/OOB/OOd/ZWW/Z4
AUTHOR: Galkina* T, I.; Ponino He A.; Rassushin, V. A.'~
ORGJ Physics Institute im. F, N., Lebedevj AN SSSR,, Noscow Qizibheskly institut AN
SSSa)
TITIZ: Determination of the energetic position of the acceptor level of oadrAum 'in
indium arsenid
SOURCEI Fizika tverdogo telaj, v. 8, no. 8p 1966, 2488-2490
TOPIC TAGS: arsenide, indium, compounds cadmium, ionization
ABS'MACT: The ionization energy of cadmium atoms in InAs was determined from -the spec.
tral position of the recombination radiation line of indium arsenide diffusion diodas.
The observations were made by transilluminationj~hrouyi the n-region of the material.,
which had an'electron concentration no = 2 x 10 err . It is postulated that the
radiation of the diodes arises in the p-region due to radiative capture of an electron
from the conduction zone by a neutral cadmium atom. In this case, the spectral char-
actoristic of radiation for direct transitions.between the conduction band and the ac-
ceptor level is expressed by the formula
9 G(Y) = Y-1
where Y = - - "' + 6--and fiw is the energy of a radiation quantum. It follows -that
the maximum of Ue radiation intensity lies at y = 1A, il 01 1 atkvmax = Cd - ca

L 06439-67,
+ kT/2. it was found graphically that C, 0.195 eV. The forbidden gap width
,a
of InAsp necessary for the calculation of Ne onizaiion energy of cadmium Cd# was ob-
tained from the photoluminescence spectra of InAs at ?SOK. At this temperature, the-
forbidden gapwidth of indium arsenide Cd ve 0.405 oV, and the ionization energy of
Ca&ium. Ca ot 0.010 oV. Authors thank N. M. Ponomarev and D. A. Vlasov, on the staff
of GIREMW9 for providing InAs samples of the highest degree of purity.,/Orig. art.
SUB'CODSt 20/ SUBM DATE: 14Fob66/' ORIG REF: -601/ OTH REF: 006
Card 2/2 a~~L/

L 06102--&1 1A-IT(m)/I�'rJP(t)/h'TI !JP(c) JD
ACC NRt AF6026709 SOURCE COW"t ult/offfX76-8fo-W -
2473/2473
AUTHORI Galkinas T. I.; Ifornilova, N. B.;. Fenin-, ne-At
7'1
ORGI Physical Instittito im. P. N. Iebodev, AN SSSR, Moscow (Fizichaskiy nat U Ali
SSSR) I'l VI
MISI Structure of the recombination emission spectrum of indium. arsenide diffused
diodes
SOURCES Fizika tvardogo tela, v. 8, no. 8, 1966, 24?3-2475
TOPIC TAGSI emission spectrum, indium compound, arsenide, semiconductor diode
ANSTRACTZ The spontaneous recombination emission of indium arsenide upon injection
of charge carriers through a p-n junction was studied at ?80K and below. qIo diodes
wore prepared by diffusing cadmium into -n-type material w-Ith a donor concentration of,,
3.8 x IoI7 cm73. The emission spectrum of a diode imnsersed in liquid nitrogen (780K)~
with a current passing through the diode (2 A and above) was found to change consider-i
ably with changing injection currentl as the latter increases, the intensity of the
main peak increases 3.1nearly and shifts toward higher energies, whereas the intensity
of well-rosolved secondary poaks (0-350 and 0.360 oV) on the long-wavo side of the
main peak tends toward saturation, and the position of these peaks is independent of
the current. As the temperature is lowered to 24cX, the resolution of the secondary it
stiucture does not improve. The main peak (0-380 eV) is attributed to radiative tran-~;
Card

T
NR, ~~769'
sitions from the conduation band to the acceDtor level of cadmium. The secondary
peaks are thought to b3 fomed in the forbidden band. of InAs an a resot of defects
arising upon diffusion of Cd into InAs under conditions where there is a high excess
pressure of arsenic (a:bove 0-3 atm), which is usually placed in the ampoule during
difli'.asion.. Authors thiWc V. A. Rassushin for discussing tho work. Orig. art. has 1
2 tiguras.
SUB CODEs 20/ SUBM aM & 03Feb66/ OaIG REF: 001/ OTH REF: 001
I Card

j,'%CC NR: AP6037022 SOURCE CODE:' UR/0161/66/00,9/oli/~445/~447
AUTHOR: Zhurkin, B. G.; Rucherenko,
ORG- Physics Institute im. P. N. Lebe(71cv, AN sSSR moscow
(Fizicheskiy institut AN
SSSR)
TITLE: InPluence of uniaxial comprescion on the jump 6.6nductivity in P-Si
SOURCE: Fizika tverdogo tela, v. B., no. 11, 1966, 3445-3447
-.TDPIC TAGS: silicon semiconductorp"somiconductor conductivity, pressure effect,
activation energy,.temperature dependence
ABSTRACT: The purlose of the investigation wan to determine the dependence of the
...al~tivation energiam e2 and e3 on the pressure in p-Si. The measurement, of the elec-
tric conductivity vere made in a sample with boron impurity 1.6 x 1018 Caj-3 at pres-
sures 0-37 kg/mm2 and temperature 4.2 - 77K. The pressure and the current through
the sample were both parallel to the [110] direction. The tests showed that the tem-
perature dependence of the conductivity can be represented as a sum of exponentials
iii the activation energy,
The conductivity with activation energy e1. corresponds to transition of holes from

ACC NRI AP7005840 SOURCE CODE: UR/O]A-1/66/068/6i~/~~-50*/35-5-4-
AUTHOR: Zhurkin, B. G.; Penin., N. A.; Svarupo P.
- MWW06~
ORG. ftsics Institute im. P. N. Lebedev, AN SSSRp Moscow (Fizicheskiy institut All
SSSIR)
TITLE: Influence of jumplike motion of the electrons on the EPH spectrum of phos-
phorus in strongly doped n-type silicon
SOURCE: Fizika tverdo(;o tela) ve 8, no. 12, 1966, 3550-3554
TOPIC TAGS: electron inotion., epr spectrums phosphorusp silicon semiconductor, semi-
conductor impurityp spxtral liney line width
ABSTRACT: This is a continuation of earlier work (FTT V. T, 3204p 1965 and elsewhere)
where a strong dependence of the LTR spectra of phosphorus in n-Si on the impurity-
atom concentration,, temperaturep and degree of compensation was established. The pre-
sent article reports results of research on the shape and width of the central line ir,
strongly doped samples as functions of the concentration of the phosphorus atom, the
temperatures and the degree of compensation by boron. The samples were grown by the
Cuchralski iftethod and the EPR spectra were measured in the interval 2 - 20K with a
superheterodyne spectrometer operating at 9.4 GHz. The line shape was analyzed by
ccmiparlson with standard Lorentz and Gaussian curves. The results show .that an in-
crease of the phosphvms concentration from 4 x 1017 to 1 x 2018 cm73 and of the tem-
peiAture from 2 to 2DX produces narrowing of the linep which has a Lorentz shape at
Card 1/2

L Ijf, JD
I 4"(1o
)/EVIT(r.&EVIP(t)&~ -(c)
~,,~MNV_AP5027391- SOURCE -r.ODE-:- -'-UR/01:,91-/65/007/01113188/3193-
AIMIOR.*: Penin N.
'Ov,
"_,Zhurkin B. G.; NOR
14
-O)EG: Physics ustitute im. P. N. Lebedev, AN__�q�~~, M2_qpq~L. (Fizicheskiy institut
A11 SSSR)_
IITLE: The lnfluenci.~ of concentrations of donors.and acceptors on the eigg-tric-gm-
dt~ctivity.of high7alloyed n-type silicon
SC!URCE,,;. Fiz:f.ka tverdogo tela, v. .7, no. 11, 1965, 3188-3193
TOPIC TAGS: ~electric_conductivity, impurity conductivity,-crystal impurity, impurity.
bv6nd, silicon alloy
AV$TRACT: An investtgation was made of the influence of the concentration of phos-
pb,brus and the degree of compensation by boron on the electric conductivity of a high-
alloyed n-type. silicon with weak and strong compensation in a range of temperatures
'fibm 4.2-to 78K., The activation energy cl-of the-impurity conductivity and the activ&
't y of -the hopping conductivity were measured. The measurements were
Ip4on energ
Orformed on weakly.and strongly compensated silicon specimens with basic impurity
1017 6 x 1017, and 1 x 101 3
IcanceAtrations Nj) of 2 x 8 atoms of phosphorus per cm
-.~p~eciihens were cut from noncompensated and compensated parts of the same silicon
i5l.ngle: crystal. Compensation was accomplished -by -imtroducing boron into the
m6lt Auring the growth of the crystalso The degree of compensation
lc,~= Nj~lNb- in the specimens was determined by measuring both the tempera-
OC?0101,
VA.

L 5039-66',-
ACC NRil AP5027391
tult the electroconductivi case in the
le J! the,_ Hall jeffect. an ty. An incr
o:
-C I- :-impurity .(boro In silico. alloyed,with Phosphorus changed.the activa-
o t!P ens titn n
ticin,energy e',, of th(( impurity conductivity more strongly than the corresponding in-
CrOasein the phosphc~,rus concentration. A. decrease of the activation energy c, with
thti concentration of.phosphorus was observed at-concentrations.-at which a substantial
v6rlap, of wave functions of impurity atoms occurred. This overlap caused the bottom
0
7
of~.the conductivity zone todecrease. The strong influence of a minor impurity on the
-'aci~ivation energy c1 As limited by the electric. fields oUcharged atoms of minor im-
Pjjj,-'ity, which are effective at large.distances. With anincreased concentration of
ph6sphorus atoms at a, small degree o ,f compensation, the activation energy E3 of the
hopping conductivity increased initially and then at a,concentration above 6 x 1017 cm-3
beltan to decrease. Ata small degree of compensation, the dependence of conductivity
on-~~temperature has definite values'for..the activation energies c1 and c2. For in-.
st~ince,:.at a strong compensation in specimens with a high concentration of donors, the
IL
Avation energies el and C3 depend on temperature., This can be attributed to the
evirgence of a.strongly fluctuating electric field generated by the charged donors and
e rie- [JAI
acg~ ptors.', Orig. art.. has: 3 figu s 6 formulas, and 1 table. ~J'
SM~ CODE: SS/ '-SU~M-DATt: 16Apr65/.~.ORIG UP:. 002/ '0TH REF: .008/ ATD PRESS:
LgRid 212,'

1.5400-66 3C(m)/T/D1P(t)/&-JP(b)/JWA(h) V.11(c) JD/JG/AT
hCC NR: AP5027394 SOURCE CODE: UR/0181/65/007/011/3204/3208
AUTHOR: Zhurkin, B G,.; Penin, N. A.
ORG:_ P~Ysics institute AN SSSR' Moscow (Fizi;heskiy institut im. P. N. Lebedeva
AR SSSR)
TIM: Effect.of c(wfipensation on the exchange interaction of donors in heavily
d*ped n.- -silicon
SOURCE: Fimika tvetOogo tela, v. 7, no. 11, 196S, 3204-3208
TOPIC TAGS: semiconductor theory, silicon semiconductor, epr spectrometry
MISTRACT: Analysis Df electron paramagnetic resonance spectra of compensated sili-
ccin shows a new compqnsation effect.uhich occurs in heavily doped semiconductors: W
hit
the exchange interaction of the majority impurity atoms is interrupted in the elea-
trical fields of minority impurity charge centers. The authors give experimental
data on this effect Observed by the electron paramagnetic resonance method in beavi-
lydoped n-silicon w1th a phosphorus concentrat-ton of 1017_1018 cm-3, compensated
wi:th boron. Both weakly and heavily compensated specimens were studied. The boro
was added to the welt while the Wcimens mwe being grown by the Czochralski method.
Gird 1/2

!L 5400-66
Acc HR. AP5027394
C?
-The degree of compensation was determined from the relationship between temperature
and electrical conductivity in weakly compensated specimens, and by measuring the
.Hall effect and electrical conductivity at row temperature for heavily compensated~
specimens. The electron paramagnetic resonance spectrum for a weakly compensated
.specimen with a phosphorus concentration of 101 cm-3 at 20K is an isolated line
:with a width of 6 oe and no traces of hyperfine interaction. The spin density in
~tbis specimen was reduced by a factor of 'v5 after 80% compensation while the line
width increased to 8 oe. The greatest change in.the form of the electron parayfiag.-
netic resonance spectrum was observed in a specimen with a phosphorus concentration
:of 6.1017 cm-3. In this case, 90% compensation reduced the total spin density by
a factor of 1%,10, while the intensity of lines for hyperfine structure was approxi-
mately doubled. A theoretical explanation of these phenomena is given based on at-
itenuation of the volume interaction of phosphorus atoms in the electric fields of
ithe negatively charged acceptors. In conclusion, the authors express their grati-
itude toLV. Keldysh for discussion of the results. Orig. art. has: 2 figures,
'1~table.
!SUB CODE: SS/ SUBM DATE: 28Apr65/ ORIG REF: 003/ OTH FXF: 006
2/2

IJP(e JD
ACC NRI AP5021.143 UR/0386/65/002/001/0021/0023
AMHOR: Zhurkin, D. G.; Penin, N. A.
TITLE:. Temperature dependence of byperfine Interaction lines in EPH spectra of io
1~bosphor s in pilicon
SOURCE: Zhurnal eksperimentallnoy I teoreticheskoy MAL Pis'= v redaktsiyu.
Prilozheniye 1 v. 21, no. 11, 19651 21-23
TOPIC TAGSt EPH spectrumi silicon, hyperfine structure, impurity center, wave
fu6ction
ABSURACT. The,authors investigated the temperature dependence of the s
pectra of
elt~,ctrdn parami4petic resonance in n-type silicon doped with phosphorus, and observed
that the byperTine interaction lines behaved differently in spectra of samples with
different
.phosphorus concentrations. The measurewents were made at 1two temperatures
(2 uid 20K) for samples with donor concentration-2, 4.5, and 6 x 10 7 cb-3. In the
Iasi; two sarqplcts the intensity of the hyperfine interaction lines decreased rapidly
with increasing, temperature. This difference is attributed to the different nature
of the.pa-ramagnetic centers uhich make the main contribution to these lines at differ--
ent phosphorus concentrations* x 1017 ctn73 the hyperfine interaction lines are
due
principally, to the isolated atoms of the phosphorusi-since the overlap of the wave
functions is insignificant at this concentration, At higher concentrations there in
consSderable overlapping of the wave functions~ and the hyperfine interaction lines
Card 1/2

F77::~ : - , !~
I '--, -"--7~7 F-7-7 ~,77
tj- - - - 'i
~` I
--a - ~ U

IVENOV) Sergey Pikolayevich; qjgty,.Aeks(UevIch;
SKVORTJOVA, Nera Yefimovna; SOKOLOV., Yuriy Fe~~io~ich;
VOaOVA, I.M.., red.
(Physical principles of the operation of ouperbigh fre-
quency semicorductor diodes] Fizicheakie osnavy raboty
poluprovodnikovykh SVCh diodov. Moskva;, Sovetskoe ra-
dio., 1965. 190 P. (HIRA 18:7)

HOW, Sergey, Nikolayevich; PRUN, Nlkday. Alokoeyovich;
SKVORTSOVA, Nora iOLOV, Yuriy Fedorovich.-
VOLKOVA, I.M.., red.
(Physical Drinciples of the operation of semiconductor
microwave diodes] Fizicheskie osnovy raboty poluprovod-
nikovykh SVGh diodov. (By] S.N.Ivanov i dr. Moskva.,
Sovetskoe radio, 1965. 190 P. (MIRA 18:5)

_!ACCESS.L
-ON NR: AP4028hh~ S/aL81/64/006/004/1141/114
MTHORS: Zhurkinj B. Go; Penin., No A.
!TITLE- The effect of concentration of Impurity atoms on the spectrum of electron
pqramagnetic resonance of donors in silicon
1SOURCE: FUzika tverdogo telaj v. 6, no. Itt 196hi 1141-114
TORIC TAGS: electron paramagnetic resonance2 silicon, impurity atom, doped semi--
conductor, Ozoehralski method.. impurity concentration
ABSTRACT: The authors describe the results of studying changes in the EPR spectrum
in single ci7stals of Si doped with vhrious concentrations of P or As. Measure-
Iments-were made in the temperature interval 2-20K. The crystals were grown by the
iftochralski., method., and impurity concentrations were determined by measuring the
I
jHall coefficient at room temperature* These concentrations ranged from 1017-3.1018
Ict-3. It was found that increase in donor concentration leads to gradual disapp6ar.
lance of lines representing hyperfine interaction in.the EPE spectrum and results in,1-
"the appearance.,of a single linej the width decreasing with increase in concentratio
C~rd
:7-77!

AP4028443
ACCESSION NR
and in temperature, within the limits of the experimental ranges of these two'
..1factors. The observed changes in the EPR spectrum are explained by delocalization.
1of electrons as the impurity band develops and as metallic conductivity begins to
appear4 Compression of the single MIR line with increasi~nj concentration 9f As was
found to take place at higher concentrations than with P. The nature of ther
I
ispectral change also indicates'chaotic interaction of t~e impurity atoms. The EFR,
Ispectrum shows lines of isolated atomsy lines due to different grouping of atoms
associated with exchange interactionj and also lines of mobile electrons. The
.-ichaotic distribution of impurities (in forming an impurity band) gives rise to set
.'of energy levels near the conduction band., each at a different depth and corra-
:sponding to different groups/of atoms, with wave functions of the donor electrons
overlapping to various extents. "In conclusion.. the authors express their thanks
Ito M. G. Millvidskiy for preparing the single crystals of silica doped with
lphosphorus anct arsenice" Orig, arto has, 4 figuro6b'*
fASSWINVION: Fizicheskiy inBtitut im, No.Lebodeva AN, SSS11) Moscow (Physical
11natituto AN SSSO
Card 2 /3

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CCESSION 14R1 :AP4028h43
A
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ED:
S UBM M
03
Nov63 DATE ACQt 27Apr64' INCL: 001
E .

i

W CODE:

): SS

O IW SOV's 000. OTHERt I
D05.

.Card

ACCESSION NR: AP4043402 S/0,181/64/006/008/2558/2560
AUTHORS: Zhurkin, B. G.; Penin, N. A Volkovf M., A.
TITLE: Influence of compensation on the form of the epr spectra
in n-type silicon
SOURCE% Fizika tverdogo tela, v. 6,. no. 8, 1964,'2558-2560
TOPIC TAGS: electron paramagnetic resonance, line broadening,
phosphorus, silicon, boron* crystal.growth, spectrometry, impurity
content, spin balance
ABSTRACT: In vie%4 of the confusion still existing with respect to
the distribution of the energy states in the impurity band, the
authors experimented with phosphorus-doped n-silicon. The measure-
ments were made for three values of the phosphorus concentration:
17 17 18 CM73
2.3 x 10 , 6.0 X-10 , and 1.0 x 10 with the phosphorus
concentration in the compensated sample's being equal to the concen
Card 1/4

'ACCESSION NR: AP4043402
nsa-
tration in the corresponding uncompensated samples. The compe
:tion was effected by introducing boron in crystals grown by the
!Czochralski method. The samples for the measurements were cut"from
icompensated and uncompensated parts of the same single crystal.
~'The experiments were carried out with a superheterodyne EPR sTec-
'trometer at 9.4 Oc and 2K. The results show that at 2.3 x 1;0 7 cr~-3
ithe width of the impurity band is still narrow and probably does
10-4 eV)., At 6.0 x 1017 cffr3-apparently at
knot exceed kT (1.74 x
'least 90% of the states of the impurity band lie above the level
corresponding to the isolated impurity atoms. This was in contra-
diction with the theoretical predictions which call for the states
of the impurity band to be symmetrical with respect to this energy
'level. At 1 x 1018 cm73, the compensation decreases the spin con--!,
centration by.approximately a *factor 5.and broadens the EPR line to
8 Oe. This indicates that the electrons of the lower states in the
.impurity band are.more strongly localized than the electrons of the,
higher states'. "In'conclusion the authors are grateful to A. Ni
COM 2/4

-khTFRIYEV.. B.F.; DOMIOVSKIY, S.B.; ZHURKINp B.G.; 'IMPYLOVSKIY, B.D.;
Transistor current remilAtor for electromagnets. Prib.i tekh.okup.
7 no.1:329-131 Ja-F lk. (MIRA 15:3)
1. Fizicheskiy institut AN SSSR.
(Transistor eircuits)(Voltape regulators)

84497
S/1 12,/59/000/014/078/r, 85
AQ52/A001
50-
Translation from: Referativnyy zhurnal, Elektrotekhnika, 19,r-9, No, 14, PD. 2~-
251, # 30327
AUVHOR: Penin, P. I.
T=,,: Some Properties of the Ideal Signal Receiver With Two Discrete
Values
PERIODICAL-. Tr. Mosk, energ. in-ta, 1958, 140. 31, PP. 189-195
TEXT: Some properties of the ideal- receivers for the cases of, signals with
two discrete values S 1 and S2 are clarified. The values of error probabilitiez
of the first (,6,) and the second discrete value q2i ) are derived and investi-
gated;: they represent the reproduction of S2 insteai of S1 ~Lnd Of S1 instead of
S2- Diagrams showing the relations between ~j and ~jj and distortion probabil-
ities caused b the errors/~ and ~J3: at different values of the ratio of a priori
probab Ilities ~,, are given. it id shown that ' the effect of the error probability
g, at g