SCIENTIFIC ABSTRACT PULTORAK, J. - PULYARKIN, V. A.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001343610011-1
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: March 14, 2001
• Sequence Number: 11
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

Aelc7il-1,73tor c)f t.,:e @`ij-droc:;lorir acid roncentxat-4r@r.
n. 50. (Cllemicll@y '---unysl. Vol. 7, nc.. 10, "-ct. 19-57, rpha, C-erhrsjcv;--.jeji)
11A r,.Uily In:! e:i c f ---=oue@r, A ccessjcns (EF-l--T) -@ C. 01 - 7, nc . 21
reuruary

C' Z " 0 3 L. '13 ",.T A @ __ i A UDC 61 -,.632: 5IL7. 538. 1 LI
S I 1-Fn 0'Andrei; '.,VA, jir-ina; ZULTAROVA, InIelena; Department
of Uccupational Diseases, Krajslcy Institute of National Health
of the Kraj of East Bohemia (Oddeleni Chorob z Povolani, KRRIZ
Vychodoce3keho F-Iraje), Hradec Kralove, Head (Vedouci) Docent Dr
J. JINDRICHOVA.
'TEffect of Styrene on the Health of IvIorkers Fmployed in the Prod-
uction of Laminates."
Pra.--,ue, Pracovni Lek,,rs-tvi, Vol 18, No 8, Oct 60', 13p 30-352
Abs tract'F@.uthorsl LriglisIt-, su.-V-ary modified,_7: Ht@ath. of 101 women
and 27 men employed in u'Rc! produoti-n. of styrene laminates was in-
vestigated. Avora@7e exposare was 1.8 years, w.ita a maximum of 3
years. Styrene c ncentrations up to 700 mg/cubic meter were re-
corded; this is 3.5 more than the Czech leCal maximum. Skin dis-
ease and neurasthr:nic syndromes were found; no affection of the
liver or the 7ail. 1.1adiler was determined. The amount of mandelic
a,-id and of creati-@.ne in tlie urine is a good indication of the
exposure to sLyreno, vapors. Testing can be made at the end of
uh@- working per'_od. 5 Tal-les, 5 Czech, 3 RLssian references.
(Manuscript reoe.;@;ed 11--, jul 65).
1/1

POIAIM/Electronics Photocells and lEeiniconductor Devices H-8
Abs Jour : Ref Zhur Fizika, No 5, 1.958, No U171
Author :-Ful Jerz
Inst : Hot Given
Title :Tiansistor with Ifigh Currant CAin Coefficient
Orig Pub :Zesz. nau1c. Politechn. warsz., 1957, Ito 33, 79-104
Abstract :The author excamines the variation of the output characteris-
tics and current gain of point-contact transistors with
the properties of the materials used for its manufacture and
with various factors of constructional character. A point-con-
tact transistor with additional emitter is examined from this
aspect. The passage of a current of minority carriers through
the second emitter of this transistor increases the coefficient
(under certain conditions) to approximately 20. The optimi
operating conditions, the choice of the material, and the mode
of formation of the transistor with additional emitter are
analyzed. Curves are given for the dependence of the coef-
ficient of the transistor on certain constructional and
operating parameters. It is shown that it is possible to
Card 1/2

PULTOTM) J.; MODRZEJEI-ISKI, A @
Fast switching AI-Si silicon diode. Archiw elektrotech 11
no. 1:187-190 162.
1. Zaklad Elektroniki., Instytut Podstawowych Problenow
Techniki., Polska Akademia Nauk, Warszawa.

::-@7 T r,
V31. Uncl.

a t: on
lec:
submi,-,-:
F, n:a

L 54051-65
EWT(1)/E~T(m)/T/~Wp(t)/EWP(O)/~*A(h)#'Pz~6/Pa~I IJPW @D/Ai'_'
65/0O010O2'bO6916q`-':_
AP5009090
ACCESS30DN MR:
AUTHOR: ft1torak. J.
-a and 1-
7ITTZ.0 (lermanlym-p hjunctlon d1ofte
SOURCE: Przegije@@elektronikj, no 2A 196% 69-75
TOPP; TAGS: junetion.diode, in Ih Junction diede, diode, ipn Junction diode, 34
Junction diode, rectification factor, back current, conduction current, minority
carrier, minority carrier frequency, germanium diode
ABSTRACT: The p-n and 1-h junction diode.(see Fig. 1 of the Enclosure) having.
a minimum saturation current and capableof high-density current conduction. has
been designed so that the thickness of the.basels much smaller:than the diffusion!
length of the minority carriers, and the 1-h junction, which served as a drain of I---
the base, has the lowest possible recombination frequency of the minority Cal,-Aersdi.
types: am I.) sub-,:
The advantages of this diode as-,compared with conventional a
stantially higher (by approximately one -order of magnitude) maximum conduction 'L:ur_2
rent; 2) low polarizing voltage.corresponding to the maximun=nduction current and..
consequently, low paver losses; 3) the possibility of obtaining a linear charac- 1-tll-
teristic of log I f(U) in the conduction direction in the approadmate range of
Card

LULPGRAK, J.; iioD-I"'sKi, W,
The influence of forming upon the Olcutoff frequency of point transisitors.
P. 385. ARChrAUM ELECTRUH-CHNIKI. Idaszawa. Vol. 4, no. 2, 1955
Source: Esst European Accessions List,(EEAL), Lc, Vol. 5, No. 3, Farch, 1956

FULTOR-'.K, J. ; RCST--SKI,Ir.
Influence of formdnE upon the Olcutoff fre-iuency of point transistors. P. 385.
A.-RCHT.,!UN ELEURCf@@CnN11F.I. "-Aszawa. Vol. 4. no. 2, 19r,
J.)
Source: East European Accessions List, (EEAL), Le. Vol. 5, No. 31, March, 1956

PULTORAK, Jerzy, mgr.,inz.
Thyristor, a new semi-conductor device. Przegl elektrotechn 37 no.6:
229-236 61.
1. Zaklad ElektrovAki, Instytut Podstawowych Problemow Techniki
Polska Akademia Xauk.

P/Oig/62/'011/001/010/010
D265/D302
AUTHO-RS: Fultorak, J., and Modrzejeviski, A.
@."TTLE- A @ast switching Al-Si silicon diode
P-RTCD'rC,'.L: Archiwtuzi elektrotechniki, v. 11, no. 1, 1962, 187-190
U.;.
met-hod of Dre-oarirg the p-n junctfon of a small 7poTer Al-
Si d-Lode deve-looed at the Institut elektroniki IPPT-PAN (institute
of Electronics of the Polish Academy of Sciences) is described. The
neb-ligible solubility of Si in Al allowed control of the depth of
lusion and the eutectic bonding method used to produce the Junction
resuited i., its regular shape. The process of fusing a thin alumi-
num rod (100 0 into a silicon plate of 100 @ thickness soldered to
a molybdenum base in an apparatus heated to o500C, iinder N2 was pre-
ceeded by careful chemicai etching and cleaning. Slight pressure
vias required to initiate the fusion. A small power Al-Si diode has
thus been obtained with a switchin- ti-me of about 60 x 10-9 sec.
0
and maximum reverse current of 15 mA when switching from + 15 mA to
-30 V. The diode has a small capacitance at zero bias, C 0 1:-,- 3pF and
dar d (1 '1 2

P/01 62/011/001/010/010
A fast switching Al-Si silicon diode D265YD302
a hig1'@- coefficient o--F' rectification (forward current a@ + 1 V hi-
E,,.'er than 50 mA and reverse current at -30 V less than - 0.1
It can be used at tem-peratures up to + 1400C. There are 4 figures,
2 tables and 3 references; 1 Soviet-bloc and 2 non-Soviet-bloc. The
references to fhe 'Em..--lish-language publications read as follows: M1'.
J. Calle, C.A.P. Foxell, IEE', Int. Conv. on Transistors and Associa-
tion Semiconductor Devices, 21-27 1,1ay 1959; H.E. 3ridr-ers, J.H.
C
Ld k,
'kaff, J.N. Shive, Transistor technology, v. I, P. 377, 1958.
ASS'OCIATION: Zaklad elektroniki (Institute of 71 lectronics)
SUM:ITTED: July 12, 1961
Card 2/2

PULT@,!GLK, Jerzy
I-- _-
Gold-Germanium eutectic contacts. Pt. 1. Przegl elektroniki 3 no-3:135-
139 Mr '62
1. Zaklad Blektroniki, Instytut Podstawowych Problemow Techniki,.Polska
Alca-lemia Nauk, Warszawa.

AccEssica NR: AA043934
AUT90R.-' PultoMk, J-
P/0019/C4/013/002/02P-1/0246
TITIZ: 71je p-a Junction under ainority carrier exclusion and accumulstion
con(liti(:ns
SWRCE: Archiwum elektrotechniki, Y. 13, no. 2, 1964, 221-246
TOPIC TAGS: semiconductor diode, germanium semiconductor diode,, germanium
diode, minority carrier, carrier exclusion, carrier accumulation, p n junction
ABSTRACT: This article presents experimental results concerning the effects
of exclusion and accumulation in semiconductor germanium diodes. It was found
that replacement of a base contact with high recombination velocity by an R-h
junction, along vith changes in engineering principles,, leads to a substantial
impravement in the current-voltage characteristics of the diodes& Mw (V-n)-
(Z-h) diode has a base contact In which the recombination velocity at the cur-
rent carrier In described by -
a a
h
U the 41NOW
where pp and pt+ express the hole density of the p-ps, junctlam,,
Va
Ccwd

ACCESSICIN 1m: AP4043934
Ch is the electron lifetim in the
tron dirfusion constant in the h region, and n
h regions The current-voltage characteristic df the diode is described by
I M I,(W'U-l) - [((IDnnp)/L,] tgh [(W/Ln)(eDU-1)j,
where Is the saturation current, Dn the electron diffusion constant in the n
reg on'. the electron density in the p region under thermodynamic equilibrium
cOnditi Ln the diffusion length or electron holes, and q/kT (q being the
electron charge, k Boltzmann's constant, and T the temperature in deg K). This
equation was found valid for the @locking polarization or the diode where leak-
age currents as low as 3*10-5A/cm vere obtained. The forward characteristic
of the (p-n)-(L-h) diode agrees with th.-*Ls equation only when the bias does not
exceed 0-05 V- The (P-nH&@) diode permits the conduction of cmrents vith
densities to about 3*10.)A/cn and might have a linear characteristic of log I - i
f(U) in a range exceeding 5 current decades of conduction. It is concluded that
these results can be obtained only if the recomended changes in the design and
technology of the diode am made& Orige art* has: 39 formulas and 23 figareas
Card 2/3

Acamim im: Ap4o43934
ASSOCIATIM Zaklad Elektroniki IPPT--PAK (Electronics Factory IPPT--PAN)
i
SV&%ijTMM 1 20
,,Tan64
NO REF SOV: 002
ENCL: 00 mm CM3 53
'm 1 020
Card 3/3

FULTORAK, J.
Alloyed junction p--n-n+ Germanium diode. Ral Ac Pol tech 10
no.5:L275J-[278] f62.
1. Laboratory of Semiconducting Devices, Department of Electronica.,
Institute of Fundamental Technical Problems., Polish Academy of
Sciences, Warsaw. Presented by J.Groszkowsl@i.

38297
JD P 0153r(62,0001;003 OOLOOJ
1004,1204
AUTHOR. -.11ultorak, Jerzy--
FITI-F. GiAd-gormanium cutectic contacts
PERIODICAL liicgl;jd elektroniki, no. 3. 1962, 134 139
l'FXT: Instead ol'directly bonding gold wire to germanium %% hich gives deep and irregularly shaped contacts
it is proposed to form first it -cutectic extension-on the %%ire by immersing it into it gold-germarnurneutectic
alloy The alloy is contained in it niolybdenum crucible where it is heated to 30U C in an atmosphere ol'drv
hydrouen. Eutect ic contack, obtained in this way possess the following features: (a) regular shape. (b) possi-
bility of easy control of the penetration depth; (c) may be made at relativelv low temperavue: (d)their
mechanical and clectrical properties are no worse than those of contacts obtained directly There are 9 Figures
ASSOCIATION Zaklad Elektroniki IPPT PAN (Department of Electronics IPPT PAS)
Card 1,11

@ r I!, C;" m - 1.
LOBANOV, ".N., '401, " hn. na!l'-; PIETORi'C@, V.F, @'r-@tsent, khmi. tekhn. nauk;
D!2BPJl-!VS?,I'!, V.D.. kand, .ekhn. nauk
,rammo,i tea:--Ang, and t@-;,p lise of @eaching m@achi nes in pi- ot og--r--n=,e try.
Prog -1 -
J-,v, vy:i. iic-h,.!I)- @,,,iv,; geod. I aerof'. no.5s75-82 16"..(KIRA 180)

FJLITR, A. [Fulltr, A.]
Theory o" the honologies of ritirtlially ardered sets, Soob. AN
Gruz. SSR 34 no.1.125-30 Ap'6@ (MIRA 17t7)
1. Karlov universitet, Pragap Chekhoslovaklya. Predstavief-no
akademikom G.S. Chogoslivi-Ii.

TT
160 no.@@:
Ja
a
1. Karlov un,,:er3itet, Fraga, Chek-hoslnvatska-v -c@sjalisticheskaya
7es-uniblika. @'-ii, e(;

L 32090-66 Ijp(c)
ACC NRs A1'60206@4______ -5-OURCE CODE: CZ/()045/65TO()-010-03-Xii-~/619~-
AUTHOR: Bukovsky, Lev--Bukovski ' L. (Prague); Hedj!ljn. Zdenek-Gedr3_in' Z. Prague);
'Pult 1!@--Pulttr, A. (Prague)
r
ORG: Mathematical Institute, CSAV, Prague (Matematicky ustav CSAV); Department of
Principles of Mathematics, Mathematics-Physics Faculty, Charles Uninrsity, Ecaga.
(Katedra zakladu matematiky Matematickofyzikalni fakulty Karlovy university)
/1 '7 (t
TIM: TopolwRical representation of eemigroups and small categories
SOURCE: Matematicko-fyzikalny casopisy no. 3. 1965, 195-199
TOPIC TAGS: group theory, homomorphism, isomorphism, topology, mathematic space
ABSTRACT: J. de Groot proved the following theorem concerning a topological
representation of groups: Jet G be an b1tr ;roup. Then there exists a
Hausdorff space T such that the group of all tolhomo)morphisms of T (under
composition is isomorphic with G. The space T can be chosen to fulfill some other
conditions, for example, to be metric or compact. A similar theorem for semigroups
and small categories is proved in this article. (Orig. art. in Eng'.] [JPRSI
SUB CODE: 12 / SUBM DATE: 05MaY64 / ORIG REF: 001 / OTH REF: OC14
SOV REF: 001

S/032/61/027/004/CO9/026
B11O/B215
AUTHORS: _M, and Pokrovskaya, V. B.
TITLEs Colored etching of titanium alloys
PERIODICAL2 Zavodskaya laboratoriya, v. 27, no. 4, 1961, 424
TEXTt To examine the structures of titanium alloys types tT-2 (VT-2) and
Mfr-2 (IMP-2), the authors applied the methods of oxidizing polished
faces at elevated temperature (hot etching), and oxidation in the
electrolyte. In hot etching, specimens of HM17-2 (IMP-2) alloy were first
polished and then etched with a reagent consisting of one part by weight
of hydrofluoric acid, three parts by weight of nitric acid, and six parts
by weight of water. After careful washing and drying, the ground faces
were put into a.muffle furnace, heated for three minutes to 6000C, and
then air-cooled. After each treatment, the grains of the a-phase turned
blue or bluish-violet depending on their color orientation, whereas
those of the P-phase turned yellowish-brown. The larger number of in-
clusions in the a-phase in microphotographs is explained by the saturation
of the ground face with oxygen and nitrogen (which are stabilizers of the .2@1__'@@
Card 1/3

S/032/61/027/004/009/028
Colored etching of..-. B11O/B215
a-phase) during heating to 6000C. Structural changes of the alloys may
occur in hot etching. Prolonged and frequent heating to higher tempera-
tures is therefore not suited for colored etching. Colored electro-
chemical etching may not cause any structural changes in the alloys,
Besides, a better colored pattern of the examined structure is obtained
by this method of etching. Electrochemical etching 2was conducted by the
authors at 120 v and a current density of 0.05 a/cm in the electrolyte
containing 5 9 of citric acid, 5 g of oxalic acid, 5 ml of orthophosphoric
acid, 10 ml of lactic acidg 35 ml of water, and 60 ml of ethyl alcohol.
Current was supplied in pulses of approximately 0-5 see. The clearest
pattern was obtained with Allff-2 (IMP-2) alloy after five pulses, and with
ST-2 (VT-2) alloy after two pulses. The color of the individual structur-
al components in colored electrochemical etching also depends on its
duration. The ground faces of the alloys types RHIT-2 (IMP-2) and:DT-2
(VT-2) turned yellow even after a short time of etching, and then
successively brown, violet, and blue due to longer etching. This
sequence repeated when the process of etching was continued. In hot and
electrochemical etching, the surface is recommended to be well polished,
washed, and degreased. For laying the structure open, it should also be
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5/032/61/027/004/009/028
Colored etching of... B110/B215
etched by standard reageats. [Abstracter's note: Complete translation.
Two colored figures cannot be reproduced]. There are 2 figures.
Card 3/3

PHASE I BOOK EXPLODITATION SOV/6005
Pulltsin, Nikolay Mikhaylovich
Titanovyye aplavy i ikh primeneniye v mashinostroyenii (Titanium
Alloys and Their Application in Machine Building) Moscow,
Mashgiz, 1962. 166 P. 7000 copies printed.
Reviewer: Ya. N. Dityatkovskiy, Engineer; Ed. of Publishing House:
A. I. Varkovetskaya; Tech. Ed.: L. V. Shchetlnin&$managing
Ed. for Literature on Machine-Building Technology (Leningrad
Department, Mashgiz): Ye. P. Naumov, Engineer.
PURPOSE: This book is intended for designers, process engineers,
and specialists In metal science. It may also be useful to
students at schools of higher technical education.
COVERAGE: The book deals with problems of the physical metallurgy
of titanium alloys. Basic phase diagrams, structures, and com-
positions of Soviet and non-Soviet titanium alloys are presented.
Attention is given to the following: the effect of various Im-
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Titanium Alloys and (Cont.) SOV/6005
puriti6s and alloying elements on titanium; problems con-
nected with'the heat treatment of titanium alloys; mechanical
and physical properties of titanium alloys at room and
elevated temperatures and the effect of various factors on
these properties; problems of the corrosion resistance of
titanium and its alloys; the advantages of titanium alloys
over other materials; the application of titanium alloys in
the machine building industry; and characteristics of basic
methods of processing titanium alloys in machine-building.
No personalities are mentioned. There are 109 references,
mostly Soviet.
T=OF CONTENTS:
Introduc on
Ch. I. Produ ion
1. Met all@@
.2. Properti@;Nbiuti@anium
3. Effect of im
of titanium
Card 2/5
and Properties
of titanium
rities on the
of Titanium
structure and properties
3
7
7
12
15

:3/14q/62/oor,/oo5/r,o7/Oo8
A0061AI01
Pul'tsin, 11.
TITLE,: on zone ,;tructural and concentrational peculiarities of a modified
layer in titanium alloys
lzve3tiya vysshikh uchebnykh zavedeniy, tsvetnaya metallurgiya,
r1o. 5, 1962, 137 - i4o
-'T: rffhe authors studied the structure, hardness and chemical composi-
tion of the surface layer of some titanium alloys. The structure of this layer
was modified by holding the titanium alloys in air-atmosphere at high tempera-
tures, so that their surface layer was saturated with oxygen and nitrogen. It
was found that this layer was characterized not only by greater hardness and the
presence of an alpha-affected zone but also by a content of alloying elemenis
different from the core, Experiments made with a titanium alloy containing 4%
Cr proved this concept to be correct. Micro-spectral analyses show that the Cr
content increased from 2.110 in a depth of 0.075 mm to 4.32% at 0.825 mm distance
from the edge. The presence of a contrasting alpha-affected zone in the modi-
Card 112

V1119A
)2/00Q/005/GO7/G08
On :-,ome struc '@U_-n I P. rid, concen "I rati-orn I... AOOOS1AIOI
:in@i depends on the structure of the alloy. ThIss
(iist:@nct-,ly in ;@n iLioy @-.ith an .+ strurture, while in an alloy
stnic'ure o@' oure solution it is insignificant. Tn alloys with
a
a stncture oi' pure -s,)l'd solution the modified layer and the core are not
c I r e n t a- t a 11 .Saturation ot' the surface layer with t-stabilizers (air oxy-
gen and n-I _,en) causes the reclisturibution of alloying components as a result
'tro,
of the eXpulsion of --stabilizers into deeper layers of the metal. Due to this
redistribution the sti-acture of surface and sub-surface layers is modified, en-
taillnj@ changes in the propertips of these layers and in the part itself. Until
t:ir@ 3rp5ont, ti-.e modified layer ,..,as considered to be a negative factor. Con-
@rarv -o this on'nion 'he autt--or believes that a surface layer with a modified
L - - 1.
comp osition of the basic alloving components may show a better quality thar the
DaSt, metal, espec@ally in respect to corrosion. There are 3 figures.
Acc7OCIAT7()j:: Voyerurio-vozdushnaya inzhenernaya akademiya (Military -Aviation En-
gineering Academy)
Card ".12

PULITSIN, N.M..;--POKROVSKAYAP V.B.
Effect of heat treatment
titanium alloy with 4 1/0
no.6:843-847 D 162.
on the structure and hardness of a
chromium. Fiz.met.i metalloved. 14
(MMA 16:2)
(Titanium alloys-Heat treatment)

EWP(q)/EWT(m)/IEM AFFTC/ASD
L 15579-63
iACCESSION NRs AP3000984,, @S/010/63/000/002j&@4/0161
AUTHORS:
Pulitsin, N.,M.; Fokrovs!sa@yav@.-
TITLE- Surface layer' on vacuuim-annealed titaniumi alloys
-157
;SOURCEt IVUZ. Tsvetnaya. metallurJa, no.:'2, 1963, -163.
1TOPEU TAGSi titanium alloy vacuum annealingp'.surficelayer, microstruature,,
vaporization
:ABSTRACT: Two types of titanium alloys.were.subjected to annealingin evacuated
loquartz ampules at various temperaturX d for me periods. One alloy
sana various ti
:contained from 5 to 20% of chromium 1) nd ;oas heated at,.1100,.800,.and 600C for
-------Iy The second alloy.contained 0.5%,chromium,
:16, 200, and/?00 hours respective
6% aluminumtVbLnd 5% of either irgreA s4LcogA It, was subjected to temperatures
of 1 700, and 500C fo-r-@-, 200, 300, and. 500 hours. . After cooling to
room temperature, the samples were studied with a metallographic microscope.
Their hardness was determined by Vickers I instrument, T e chemical composition of 1
h
the surface layer and core were analyzed by Korolev's local microspectral, technique;
with Korolev himself performing the tests. It was found that annealing caused the i
surface of the alloys to assume a corroded aspect, revealing a scattered micr F-
0-
i Card 1/2

lu 15579-63
ACCESSION NR:
jerystalline structure. The hardness of the.surface layer-was higher than that of--
'the core, and its chemical composition showed an enrkchment in the alloying metals'.
,,This was due to volatilization of titanium, which was deposited on the inside sur
Jace of the ampule. Thus, the care of a 5% chromium alloy contained.(after anneal-
:ing) 8,1 of this metal, the composition of the core remaining unchanged. In an
;alloy containing 6% Al) 0.5% Gr and 5% Si annealing produced no significant changes
in the Al and Si content of the surface layer'while causing the impurities (Fe and.
Mo) to increase 40 and 100 times, respectively, The samples of alloys were
@supplied by I. I. Kornilov. The vacuum annealing of-the samples was conducted with
the assistance or S. ikheyeva and T. S. Chernova. Orig. art. hast 4 figures...
;ASSOCIATION: Voyenno-vozdushnaya inzhenernaya. akademiya (Military kir,Enginee'ring
Academy)
SUMITTED3 O8Dec62 DATE AM 2lJun63 EXL: 00
!SUB CODE: ML NO REF SM 004 OTMt 000
212_
-Card 77

PULITSIN, N,M., kand.takhn.nauk
Incro3naing the resigtance to corrosion of tit4nillm allOYO, Kbim.maDhin0atr..
no.6t26-27 N-D 163. (MIRA l7t2)

ACCESSION NIR: 'AT4007028. S/2598/63/000/010/0063/0070
AUTHOR: FU'tsin, N. M.; Pokrovskaya, V. D.
TITLE: Results of metallographic and x-ray diffraction examination of AT-type titanium
alloys
SOURCE: AN SSSR. Tristitut metallurgli. Titan I yego splavy*, no. 10, 1063.
Issledovaniya titanovy*kh splavov, 63-70
TOPIC TAGS: titanium alloy, AT titanium alloy, AT titanium alloy structure, AT
titanium alloy hardness, AT-3 titanium alloy, AT-4 titanium alloy, AT-G titanium alloy,
AT-8 titanium alloy, AT-9 titanium alloy, AT-10 titanium alloy, complex titanium alloy,
titanium aluminum chromium alloy, iron containing alloy, silicon containing alloy, boron
containing alloy
ABSTRACT: In continuation of earlier work by 1'. 1. Kornilov and others, the authors in-
vestigatod the microstructure, hardness and X-ray diffraction patterns of titanium all'oys
AT-3, AT-4, AT-6, AT-8, AT-9 and AT-10 having various phase compositions. Forged
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ACCESSION NR: AT4007028
cylindrical specimens were first subjected to thermal treatment under conditions selected on
the basis of the phase diagram sliown in Fig. I of the Enclosure. McLallographic examina-
tions of these specimens by either the black-and-white method (etching with 11F + IIN03 or
with 112SO4) or the color method described previously (Zav. lab., 1961, No. 4, p. 424)
showed anc.4,-solid solution of the interwoven or neccUc type in all cases. The precise type
of structure was found to depend on alloy content (Al, Cr, Fc, Si, B), ann"ing tempera-
ture and rate of cooling during quenching. Normal X-ray anglysis on the URS-70 machine
confirmed that the alloys consisted mostly of the---