SCIENTIFIC ABSTRACT SDOBNOV, L.P. - SEBEK, V.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001447610010-7
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: August 23, 2000
• Sequence Number: 10
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

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isms.;,asphaltenes formed-'during,the -'Aotption-process..have~.
Idwer aromatic -factor.-and cfttaitv'd-. mgher:--cono
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4 figures-and-3-ta
ASSOCIATION: Institut,khimiche kh nauk"i-aradei
ski
Of -,he'mical Sci'ences':.Academ-3r,::'of.,Sciences-ok'th

SO: Referativnyy Zhiirnal-Mel-ilaniia No I Jan 54; 28 July 19-54)

3t--engt.a Under Prolonged Loading of AlloY EI-43?B Under Complex
Both tubular and~solid specimens were employed with..a working
length of 100 mm. and t =ies-to-fracture were measured :for,
1!arious,values c+' normal (d) and tangentiai.( r) stress,''the
'7alue of 'A-~or a :being zero in the case cf pure tension 0
r
pure torsion., re ec-tively. The investigations were-za,ried out
4
at the.Strength,laboTatory, Institut mekhaniki, kN SSSR
(Mechani(,s Inst.itute, of -the Ads Sc *USSR) on a test , rig IMF.Kh 2a
designed'and built.in~]'6949,, 4hich is capable, of exert'ing:a
maximumaxial-tensile load of-I 0001kg and a maximum tcrque
of 20 kgm. -The machine was provided.with.~an electric-furnace
in three.sect.ions, -each with: a rheostat,. Axial~ load was
applied through a.,le-trer.arrangement and~torque through a pulley,
arrangement. Three:lwhermocouPles were',fitted to each spec~lmian'.
for measuring its tempe-rature._Strict precautions were.obse_-V'ad
to ensure comparability,of results: the specimens were accu~z-.
tel. machin heat-.~Ireated and ]Loaded- as a check on soundness
ed., I
of-sampl material the Rockwell hardness of~each specimen w s
e a
determined and the spe-imens with an.-abuormal value of hardr-es-s.
were rejected; Ithe:temperature fluctuations during,:a test
periodweremaintained within + 1 5 .C and the maximum temperaS
ture variation over the:specimen
Card2/3 iength-did not exceed *2.5-1 C-~
Photog-raphs -shcw that spe-aimens tested,in pure t
ension ana

Strength Under,Prolongel Lcadin'g: of Alloy BI-43?B Under Complex
Stress Conditions
combined- t6ns:Lon/torsicn fractured aiong_planes at right angles
the axis- -those in pure torsion.- along p lar--, s*. at an:
angle of 45t,. to the axis. The ~test -Aesults are gi-,,ren 4n the
form of tables and graphs of a, VS. 1 g-100T. In~ cantrast to
Jdnson *s and:FroGtIs:r;_-sUlt$, ajlart~froz a certain scatter
they form a diB-1-4ne"- tZ, igh line for each type,cf~loading,
s a
the line for pure torsion 11yi be"
ag Low the~.other two. Furthermore,
the values ef ~7,. obtainad for the solid specimens we-re nearl,7
4- as hi h ag those f r -he,tubula
Uwice 9 0 r ones.. Jo,hns,cnls~and
Frost I s, empiri-sa.'~':- f ormulae, expressirg. Ig ~ T as ~ a I unction- of
and -.0i, or Of a ahd~'L we-re 'tried, with the prezent'~resultz.but
were ound unsat afastory in that the,7.gave no e b~u+. two cr,~,
t on
three straight. lines.. Subseq lentl,7 some further fc~rmu.'.Lae were
examined and it was 111,owad that one of them,
A.
-(Ig 100T) 1. 66 (2.2)
satisfactorily described the ::-eaults of a*11 the thrree, types of
loading.- There are 8 -f.iguzes,, 2 tables and 5 referenc_s.~2.of
which are Soviet
-and A Eng7 Lsh~
SUBMITTED: Julv 5,~ 195"T.
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f, ax L L
th 3,
t d E tr, c 6 -~~2 c, rA wa s. mea ur A
s t A A-07-
c r c.) r. ar with a:.ri-
M. t! Y! 'U V. 7" 6. '! y p I e r a- tu re,.c. up tc OC
41~1:~ j rp-,n- ~15 5 Efim
Qoan diameter
-111 7, (1 cured r tion was: trim
U-41
f.,:r I ca s s
wa niske
0 5 - 0 95~% Al
Tli,~ allo7
n a r e
r, al 01C
f ror, 10 0 . Otl afte-, b ci:l di ag foA"~
S -50 OC liours, followedi by air
t

_'cVo6/ol3/029.
A Criterion,of Endurance. Strength~.for Cert* I -ilea t Re ~;Is ting
Alloys in a Coripb nd
U Utros3 Oondltiwi
cooling..:'Other tests were carriod:out with a ferrous.
alloy EI-405with 0 1 2,'~'C 0 6414 Mai, a 591j; Si, ~ 15. or.' Cr,
13 Ni, ~2.301; 1-16 11 b 0 05,! ~ Ti I and, ,,pociftcd
mrities. I . /'i . V ~). I P ~
i Aurtenitic treatment vias.giv~rjn at 1100 Q~'
GO fol 10 116ul's.
folLanted.by cooling in air I ageing 'At
in, the evaluationof "the tests)~a criterion of endurance
streng. was used which Is the bLr:LthLqetic mean of tile 41-to
~h Is
principal stresses and whir, ed against the
plott
logari thin of - -the endurance peribd.:,In all cases, the
pres ent t6 s ts . corif irm the linear rela tion be WOO 11 tile
p1.
.Iotted.quantities (a*s noted by, A.S. Johnson a i
N.B. Cross of them British.National Phys c La bo r 6 ry
i al
a
in 195.4-1 -and by Zverilcovi B V Teploenerge tilk, ! 19.58,
~Nr 3). ':_ The "empirical. relationship previou51 od
Y, pr opo I
s- r
dobyrev, V.T Izv. fi-M 33SR, OTN, 1958, jNr )f) o t
bu6h confirmed: '~, The proposed criterion, OF, On
..Card
obtained in numerous tests for Ondurance period.,. u p to
2/3 a400 hours and ml",e 'of evalu- Lion of ther t; t,
is thrught to bo Significant. The -I'valation be,!, Line
temperature and the- lo-arithm of the endurance p - I
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Z 38/62/000/001/001/003
/0
-D291/0304
AUT11ORS,. Zitflanakf, Bobumil,. and gabastifin, Imrich
TITLE: The use of.a single-channel scintillation spectrometer
for radioactivity measurements
PERIODICAL: Jadernfi energie, not 1 19621,9-14
TEXT: Thepaper-points,o'ut several possible applications of.scintilla-,
tion gamma spectrometry especially~for studying multicomponent radio-
isotope systems.obtained by activation in a nuclear reactor. It des-.:
cribes-in particular.the use of the Belgian.SGXA-3 single-channel.scHtil-
9
lation gamma spectrometer for quantitative analysis of the system Fe
Mn54 CR51WI810 Scintillation gamma spectrometry can be.usedtD.great ad-
vantage forstudying the various physical,and,chemical processes and be-
havior of alloy steels, their thermodynamic constants, such as the eva-
poration rates of the.individual components, determination.of their
partial pressures and of the components thermodynamia activ,ity, partial,
enthalpies and entropies, determination of the formation and/or decompo-
sition of intermetallic phases, and study of diffusion coefficients of
Card 1/ 2

D
The use,of a 291/D304
the components in a.multicomponent: system., ThisImethod permits analyses
of such systems withouCIpreviousseparation of the individual components:_~_~_~
which are frequently,present in such extremely minute quantities that
they cannot be determined by any of,the,conventional methods* ~The dis-
advantage of the.,gamma spectrometer is that it also.records the back-
ground, the scattered gamma radiation, and the bremsstrahlung caused
by beta particles. The selectivity of asingle~-channel scintillation
gamma spectrometer can be considerably raised using large-area scintilla-.
tions or large-volume well-type scintillators.,,A still greater selecti- I
vity can be obtained by,,using multicrystal gamma spectrometer.sl in which
Ithe parts of the single-channel spectrometer are duplicated. In-Czecho-
such spectrometers are being developed by the n.p. Tesla Pardu-I
bice (TeslIa Pardubice, National Enterprise) in Premyslent near Prague*
There are l0,figureB'and,4 references 3 Soviet-bloc and.1 non-Soviet-
6loc..:(Technical.editor: J. gilar)o
ASSOCIATION:~ Vyzkumn~ fistav zvfirar~kf Dratislava (Welding'Research'_
Institute R tislava)
ra
Card.2/2

84125
7,/017/60/C49fOll/OO8/013
~1300 (/0 //.? . .1 ~ - ~ I . . . . I .. 1 -1
E073/E535
AUTHORS: Pf" Engineer,
sa, duitav, ~Engineer,~ Spiess,:_Petr,
Engineer
Sebek, Svatopluk Engineer.- Vendlerova., Vera
'W~~ - ~tor
nopa ~,Jaroffilr, Engineer Doc.
TITLE: New Knowledge Gained in the Development-of t hjg,
Technology!:of Germanium and Silicon Rectirier93mements
PERIODICALzElektrotechnicky obzor,,1960,': V01.49,No.119PP-579-583
TEXT. In,addition to reviewing world trends in semiconductor
development, theauthors deal briefly with.,results of development
work in the Semiconductor Laboratories of CKD. Prague. The
problem of dislocations in germanium has been dealt with extensive-
,ly in Czechas well as in foreign literature,(Refs 3,4,5)-
Therefore,-the authors deal only brIefly with the results of
Iextensive experiments.' the aim-of which was to determine,the
influence of theabso.lute number of dislocations on the quality,
of the P-N junctions and the.influence.oflaccumulation of
dislocations And of microscopically vtsible disturbances caused
-by accumulation of dislocations within a smallvolume. A more,
B'0 1.
-detailed treatment!-of, theseis -given -in a paper by urger and
Card 1/6*

84115
:Z/017/6o/c 49/oll
/008/013
E073/E535,
New-Knowledge Gained Development.of the'Te.chnology of,
Germanium and Silicon Rectifier Elements~
from three germanium crystals'.,,Thel.characteristics of the.three
types,of.discs .are reproduced in Fi .1 and it can be seen that-
the- diode :of the group (c) reaches only about 40%.of 'the voltage
of the diodes of group (a).~::All the results obtained for the
three groups of diodes were.used for plotting average value

curves. These.are simi
lar to the curves in Fig.2. The

characteristics*of diodes from group.(b) w
ere below those,of::.
-group (a).and on the.average were nearer to those of group.(c).
shown the quality of.the P-N transitions
The.experiments have
l
is.decisively_influenced by the poorest transitionspot, i.e. by
.the spot thatcontains a high accumulation of dislocations and
it is this spot.which determines the properties of the P-N.
junction. In studying the inverse voltages of diodes,
investigations were made an materials.with,,various average.
numbers of dislocations between zero and several tens of
2
thousands.per cm As a result, the dependence was determined
of.the.inverse voltage of.junction rectifier's on the number of
Card 3/6
p.

64115
Z/017/6o/c 49/011/008/013
E073/E5.35
New-Knowledge Gained in the Development'of.1t.he Technology o f~:
Germanium and :Silicon:Rectifier Elements
varnishesand silicon vaselinewere-used but ~these:did not prove,
satisfactory. Subsequently,~polymer type synthetic materials were
used for this purpose.-and the.characteristics~of a diode 'after...
etching With hydrafluoric:acidi the above.mentioned etching
mixture and protection by embedding in a synthetic niaterial,,,are
plotted in-Fig.,3.~ Tor..the manufacture of,silico,n P-N junctions'.,,
with inver-sevoltages exceeding 1000 Vitl,is advisable,to,use
silicon With a specific resistance of 100 t0,300 Ohm cm and.a
minimum lifetime of..the,minority carriers of 200Ao 300 lisec w:Lth
a.~homogeneous crystal lattice'and without, in'ternal.stresses'.an*d
-undesirable disturbances. of.:etching,of silicon
plates in etching,agents:of-various compositions were tested.
!The speed And the depth of etchingincreases with'the concentra-,
the;etching agent and,with temperature. The decrease in
the thickness as.a function ofthe etching timein various etching
.agents is plotted in Fig.4'.- For 150 A rectifiers, a junction area
2
of 200 mm was chosen.in order-to obtain longer service life5
better heat removal and to-avoid excessive over-loading when the
Card 5/6

84115
,Z/017/6o/o49/011/008/013
_~EWVE535
New Knowledge Gained. in the Development. of the Technology of
Germanium-and Silicon. Rectifier.. Elements
Junctions are fully loaded. CKD manufactures re6tifier ~system3.
'with N-~type .silicon,with Junctions:produce.d.by:rthe fusion method
in vacuum, Type N silicon is the most easily available in Czecho-~
slovakia~and so far.has proved.satisfactory. Manufacture of.P-N
junctions,by the diffusion method Is'also being studied.,,~ sx n c eit
1s..*considered to be more.suitable for P-N-P-N.junctions. Thebest,
method of protecting P N silicon junctions from the.effects of
.the:atmosphere is to encapsule..them.in.vacuum-tight containers.*--'
in.tests~so far good results have.been obtained by protecting -the,
''junctions with a.silicon,vaseli.ne prepared.in,.the.Research
-Institute for Organic Synthesis.without any addition; thevaseline,
must.be absolutely,,pure without moisture and degassed in vacuum.
silicon.vaseline with additions of.halogenized alkylsilanes has
not ~Proved satisfactory.' The ~encapsuling of, the rectifier systems
is also,briefly described. There are, 5 figures,, I table and
3 Czech, l_Soviet, 2 German and 9 English.
ASSOCIATION: CKD Prafial,:.n.p.- zavod Stalingrad:
(eKD Prague, Stalingrad Plant).,
SUBMITTED-. July 20, 19bO
Card 6/6

-AP6631483 SO(JRCE CODE: CZ/0008/66/000/004/0433/()450-
ACC NRt
ovaropluk
AU7HOR: Sebek, Svat
---Flant Frague (CKD, Zavod Polovodice)
ORG: GO ~~ condua&
0 i i Ei TU-m 1f; In dsilicon surfaces
TITLE: Chemical refining f e
SOLECE: Chemicke Usty, no 433-450
TOPIC TAGS: . silicon single crystal, germanium singlecrystal) grinding, grain
refinement, metal etching) hemical,engineering
0 j /-a .- .
ABSTRACT: Surfaces, Aigermanium or silicon prepared by a section
f ram 6L single crystall%ay be cleaned by mechanical grinding using
silicon carbide or aluminum oxide. 11oating in very.high vacuums
-or bombarding the surface by positively charged ions or electrons
can~also ield a very 6lean surface.-Chemical methods maybe based.
on.etching in gas phase,, :spraying in an:electric.discharge under
vacuum, etching molten metals, heat etching, and electrolytic etch-i"
ing, Chemical etching.is made by subjectingthe surface of the
material to the action of a solution of~molten salt...~In chemical,~~',
etching the oxidation component oxidizes the materialt'and the,sdl-r
vent component romoveD the oxidized component from the surfaces
Nitric acidj hydrogen peroxides and alkali nitratea are usually
used for chemical etching. Detailed instructionsfor etching procedit.-
es...pimilar for both Ge and Si are given. Removal of byproducts
of etc om the surface is descrl~b~d. Orfj; has'. 15, figurei -2 'formulas
hi~g fr
and 2 tables. EMS: 36,4643
SUO CODE: lip 20# 07 SUBM, DATE: nonelj~l
OTH REF:
L-CcHid 1, A
Z.

SEBEEK, V.; HXIoCL, J.

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