SCIENTIFIC ABSTRACT SEDLOEV, IV. - SEDOKOV, L.M.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001447620008-9
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: August 23, 2000
• Sequence Number: 8
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

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POZDIIYAKOV., B.V... kand.tekhn.nauk; I~ELYUBOV, Yu.V&,,gornyy.inzh.1 31,,'R,DYUKOV,

Mathematical Sedmakj Viktor. :Dimension des ensembles partiellement ordonnes
Reviews associes Pux.polygones et polyedres. Hrvatsko Prirodoslovno
.
Vol. 14 Drustvo. , Glasnik Mat.-Fiez. Astr. Ser.11I.. 7, 169.7182(1952).
No. 8 (Serbo-Croatian. French summary)'Let F. be., a partially ordered
Sept. 1953 Then P.has a,well4defined,dUension, as defined by.Dushnik
-
Topology mer. JO 'math'! 63t 60.0-610 (1941); these Rev, 3,~ 7f
andAilier ZA
'
'
Note.that this
. dims
nsion-19
completely unrelated,to the-dimension
.
of P as defined b~ 0. Birkhoff rAmer, Math. Sod, Colloq. Publ,p
v. 25,'rev. ed.p New Yorkp-1948t P. 11; these.Rev , lop
Let II be a polygon or 3-,dimensional polyhedronp andJet P.be the
set whose elements are the verticesp.edgeop.and faces (if.II is a
polyhedron) of 11. A partial ordering,is defined In P.in the
n Ion 5889 G. Birkhoff loc. cit j pp..12-
natural way, by set-I clut,
127. Theauthor proves thatthedImen 'sion, of F is 3 if II is a
Polygon efid1s. ;~r 4 if II is a 3-dimensional polyhedron... !If ~ 11
is one of the regular polyhedro oris a pyramid orlprism, then,
the Aimension..of P is exac.tlY 4. With an, n1dimensional, polyhedron
II, there 16 associated a~partially ordered set P'in the tame way;~.
c,onsistIng 'of
all A-dimensinnal aimplices contained in 11 (k-0# 11
, ,
~
2,,---,n).. The dimerwioL of the partially 'ordered set in this
(over)

SUB CODE.: ~07, l1/ SUBMDATE: 22MRY66.
Card 2/2

7oW
SOV11317-58-7-144841
Translation from: Referativnyy zhurnal, Metallurgiyal 1058, Nr 7, p 79 (USSR)
AUTHORS- Freydenfel'd, E.Zh., Sedmalis, U.Ya.
TITLE- Possibilities of ~ULfTi-7-gt'WK";5f~i~'fa-rnganous Open-hearth Slags for
Production of Binder Compounds (Vozmozhnosti ispol'zovanlya
tsovistykh martenovskikh shlakov dlya proizvod
margan s tva
vyazhushchikh veshchestv)
PERIODICAL: Zinatil. raksti. Latv. Univ., Uch. zap. Latv. un t, 1957,
Nr 14, pp 173-178
ABSTRACT: The open-hearth slags (S) investigated were taken f rom the
was Ite of the Liye-paya "Krasnyy metdllurg" [Red Metallurgist
plant (the S were prima rily nongranula.ted). A sample of Slot
the following chemical composition was employed: 28.37,.SiO2,,.
37.0% CaO, 9 '5% MgO, 9.416 Fe 03, 6.2 2 3 i 7.9% MnO,
2 Al 0
1.5% P205., Eleven. various mixtures were prepared (th6 only
addition being sand, sand and gypsum, sand and Po rtland
cement sand and CaO and CaC2). It Was found that after being
ground in a ball. mill, or a vibrating mill, the nongranulated S
of -40 kg/cmZafter-'1`
of the plant. indicated exhibit a crb compr.
Card 1/2 having been stored in a moist medium for a. period.of 28 days. r,

L 26398-66
ACC NRs M50247115

l.' Utilization in electronics - 2,
2., Actual problerm li
:
3.' '
Miniaturization and nAcrominiaturization

4., a8
Exanples and corrparisons

-II. Reliability problem
h.. 1 21
C
Ex~erience regarding reliability 22

6.
Maj or trends d eccnonical aspects of reliability; 24
an

S
Ch. IV. Miniature and special. electradc Conpcheilt 27

7. 2
Major trends 7
8. Operating ran of basic circuit 616u6nts ;w~:
,~7~~i

9. 1
nponents 2(
Serdeonductor c6
'
Q, Jq#rIc,vacuuin de vices 40

L 26398-w66
ACC.NRi AM50247L3

:18. Ceramte mate --Ials 75
19. Artificial substance
20.'' Special materials

~Ch. VI. Several a&Lievements of m1crominiaturization technology:-.,09
21.1, Chemical depositicn
22.~ Electroplating 86
230 Circuit printing :,86
24.
---
eniAsicns and pastes
Technology of etching using
25. ;
Deconposition by heat 89

26. ~90
:Evaporation in vacuum

27." 00
Vreatuent by electron beam
28. Equiptrent for heatin b 'ele
g ~y ctron. borrbardneilt
29 Properties of materials:used for vacuum evaporation:- 101!
30: Cathode s uttering 102
p
Production of film an :0103
d coatings

32., mts -J07
Bonding of separate circuit elenL
Technology of resis tive materials ;w~113
'34.' Capaqitor production technology
35. Semiconductor elerwnts for m1crominiaturIzation 120
36. Surface coa ng production technolo 121
t 9y

:
37.
Microphoto:~a 123
phy
.
38.
Ultrasound procedure 126 77

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ACC NRt N45024745
Ch. VII. RC circuits 12T
39. .
Structural prdnciples 128
C
.
ElenLahts of RC flat circuits.:-., 130
41.: : Morphology and tcpology of the:circuit 147.':

-42
.
istois and capacitors to those v1se in:
Transfer from, classically connected'res
1 -,flat RC circuits 148

43
7
araTmters 154
Circuits with distributed p
.
.
44. .
fafilliarIzation with f6reign products 160
4
5 circuits ~164
Further prospects for utilid~g RC
. ,
-Ch. V desigis 165
In. Module

46.
Surface of a Module, carrying board with flat ints 165~
jo
47. Tuee-dinensional mdules consisting of dlassic,element 16
7

~48. it
'171,
Tinkertqyll-t~pe module system -
49. ,
Experinental desigi of various.jmdule systerm IBO

50. s - 185
Vdcromodule
51. Aernmodule ~ unit,,-, 201;_
52. Proce&mm su sted-for desi ele ctionic devices in rdervm6dules
9EP

3.;

:d_ rw -S
211
Practical utilization.of micro AuDe
f0=
Surface and mItidimnsl
Ch. IX. onal Pmctlonal circuits - 2A4

.54.
di .214
Trends in solving m1cromIzdature rcuits
55. Two-dirmnsicnal: circuits -,:214

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ACC NRt AF60247115

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