SCIENTIFIC ABSTRACT SPIVAK, G.V. - SPIVAK, G.V.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001652720011-6
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: August 25, 2000
• Sequence Number: 11
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

66702
sov/log-4-8-22/35
Report on the Second All-Union Conference on Gas Electronics
L.A. Sena and Yu.M. Kagan deal with "Elementary Processes
of Determining the Motion of Ions in Gas".
A paper by Ye. Bedereu (Rumania) dealt with "The Role of
Resonance--!-recharging in the Kinetics of Ions".
I.S. Stekollnikov considered the initial stages of the
development of sparks (corona-leader, main channel and the
final channel).
B.N. Klyarfelld gave a survey of the ignition processes
of the discharges in highly rarified gases.
The mechanism of the breakdown of a high-vacuum gap was
elucidated in a paper by V.L. Granovskiy.
L. Tonks (USA) expounded a theory of the motion of
electrons in a magnetic trap (see P 1316 of this journal)
Academician R. Rompe (Eastern Germany) dascribed a number*
of experiments on non-stationary plasma conducted by
himself.
M. Stenbeck (Eastern Germany) gave a generallsed theory of
Dlasma. The conference was divided into six sections.
ihe first section was presided over by L.A. Sena and was
Card 2/15-

66702
sov/109-4-8-22i35
Report on the Second All-Union Conference on Gas Electronics
concerned with the elementary processes in gas discharges.
The following papers were read in this section:
Ya.M. Fogel- "Transformation (if Positive Ions Into
Negative Ones in Rarified Gases".
Ta. M. Fogel' with V.A. Ankudlziov and D.V. Pilipenko
"Capture and Loss of Electrons During the Collision of
Fast Atoms of Carbon and Hydrogen with the Molecules of
Gases".
N.V. Fedorenko et al. - "Dissociation of Molecular Ions
of Hydrogen During Collisions in Gas".
I.P. Flaks and Ye.S. Solov1yev - "Capture Cross-sections
of Electrons in Multicharge Ions in Inert Gases".
R.M. Kushnir et al. - "Experimental Investigation of the
Resonance Recharging in Certain Single-atom Gases and
Metal Vapoursst.
O.B. Firsov - "Qualitative Investigation of Inelastic
Coillsidna of Atoms"*
L.M.2Volkova - "Effective Excitation Cross-sections of the
Spectral Lines of Potassium and Argon".
Card3/15. i.p. Zapesoahnyy and S.M. K:Lshko "Some Results of the

66702
sov/loq-4-8jf2/35
Report on the Second All-Union Conference on Gas ectronics
Investigation of the Optical Functions of the Excitation
Bands of a Negative System".
A.A. Voroblyev and A.G. Vlasov - "Investigation of the
Scattering of the Electrons in a Betatron Chamber".
The second section was presided over by B.N. Klyarfelld
and was devoted to the problems of the electrical break-
down in rarified gases and in high vacuum. The following
papers-were read in this section:
G.Ye. Makar-Limanov and Yu.A. Metl-itskly - "Electrostatic
Control of the Ignition of Glow-discharge Tubes"(see
p 1274 of the journal).
S.V. Ptitsyn at al. were concerned with the breakdown
in a high-voltage mercury rectifier (see p 1278 of the
journal).
L.G. Guseva "Ignition of the Discharge in Non-uniform
Fields at low Gas Pressuresn (see p 1260 of the journal).
A.S. Soboleva and B.N. Xlyarfelld - "The Discharge Phenomena
Between a Point and a Plane at Gas Pressures of
10-3 - 1 mm Hg11.
Card 4/1.5

66702
sov/iog-4-8-22/35
Report on the Second All-Union Conference on Gas Electronics
Card5/15
T.B. Fosellson - "Methods of Reducing the Energy Lost in the
Formation of a Breakdoicn".
L.I. Pivovar and V.I. Gordiyenko - "Microdischarges and
pre-breakdown Currents Botwoon Metal Electrodes in High
Vacuum".
V.A. Simonov and G.P. Katukov - "Investigation of the
Processes of Initiation and Developmeut of a High-voltage
Discharge in Vacuum".
E.M. Reyk-hrudel and G.V. Smiraitskaya - "The Character-
istics of'Ignition in High-vacuum in Magnet;c Fields".
L.V. Tarasow et al. dealt with the transfer of the electrode
material dur�ng the pre-breakdoim stage in vacuum.
N.B. Rozanov et al. - "The Motion of Mi-cro-part1cles of
Substances During Electric Breakdoim in Vacuum*.
The third section dealt m1th the problems of electric
sparks, corona and thetrpractical applications. It was
presided over by I.S. Stekollnikov. The following papers
were read:
V.I. Levitov et al. - "Probe Investigation of the a.c.
Corona Fields". P~

66702
sov/log-4-8-22/35
Report on the Second All-Union Conference on Gas Electronics
G.N. Aleksandrov - "Elementary Processes in the Ionisation
Zone of Corona-type Conductors at Atmospheric Pressures*.
V.A. Burmakin - "Appearance of a Corona Discharge in
Hydrogen and Nitrogen"
P.N. Chistyakov et al. - "Some Properties of the Corona
Discharge in Hydrogen ifl/Coaxial, Cylindrical System".
A.S. Soboleva and B.N. Klyarfelld - "Appearance of Discharge
11honomona Dotwoen a Point and a Plane at Gas Pressures of
10-3 _ 1.0 mm. Hg".
Ya.Yu. Reynet et al. - "Nethods of Unipolar Ionisation of
Air By Means of Acro-:3*Lonisers (see p 1335 of the journal).
M.P~ Vanyukov at al. - "Timo Spoctra of the Radiation of
a Spark Discharge in Inert Gas~s" (see p 1284 of the
journal).
M.P. Vanyukov and A.A. Mak - "Production of High
Temperatures by Means of Spark Discharges".
V.A. Peretyagln - "Influence of the Magnetic Field c:C
-the Electric Discharge on the Dividing Surface of Two Median.
Card 6/15

66702
soViog-4-8-22-/35
Report on the Second All-Union Conference on Gas Electronics
I.S. Stekollnikov - "New Data From the Study of Long
Sparks".
M.I. Sysoyev - "Properties of the Breakdown of Compressed
Air in a Comparatively Uniform Field in the Presence of
Localised Non-uniformities".
A.A. Voroblyev et al. - "Pulse and Oscillographic
Techniques for the Measurement of the Discharge Lags
in Dielectrics" (see p 1257 of the journal).
A paper by B.N. Zolotykh dealt with the problem of the
basic theory of the electric erosion (see P 1330 of the
journal).
The fourth section was presided over by S.Yu. Luklyanov
and was concerned with the non-stationary and low-
frequency discharges. The following papers were read:
I.G. Nelcrashevich and A.A. Labud - "The Nature of the
Current Interruption During the Electric.Explosion of
a Metal Wire".
V.A. Simonov - "Propagation of Plasma From Local Pulse
Sources".
Card 7/1 G.G. Timofeyev et al. - "Observation of an Electro-
5dynamically Compressed Arc By Means of an Electron-optical

66702
SOV/109-4-8-22/35
Report on the Second A,11-Union Conference on Gas Electronics
Converter".
M.S. Ioffe and Ye.Ye. Yushmanov - "Investigation of
the Radial Electric Field in Ian Ion Magnetron".
V.A. Belyayev and DI.K. Romanovskiy - "Experiments with an
Electron Model of a SYste", With Magnetic samples".
A.M. Andrianov et al."'Distribution of Magnatiq and Clectric
Fields in Powerful Pulse Discharges".
G.N. Harding (England) - "Spectroscopic Determination
of the Plasma Temperature in the "Zeta" Equipment"
(see p 1326 of the journal).
The papw by Harding aroused a lot of interest and
Academician L.A. Arts!movich expressed the opinion that
the electrons and ion temperatures in the "Zeta" should
be of the same order; instead, according to Harding,
the electron temperature is lower by an order than that
of the lons.
A paper by S.Yu. Lultlyanova and V.I. Sinitsyn 'was devoted
to the problem of spectroscopic investigation of heated
Card8/i .15plasma.

66702
so)r/iog-4-8-22/35
Report on the Second All-Union Conference on Gas Electronics
I.M. Podgornyy and N G. Kovallskiy - "New Data on X-ray
Radiation During Pul;e Discharges"
V.A. Klivabrov and M.M. Sulkovskaya dealt with the investi-
gation of the neutron radiation in powerful gas discharges
in chambers with conducting walls.
N.A. Borzunov et al. - "Investigation of the Gas Discharge
in a Conical Chamberel.
S.M. Osovets et al. - "A Turn of Plasma in Transverse
Magnetic Field".
I.G. Kesayev "Data on the Division of a Cathode Spot
on Mercury in a Low-pressure Arc" (see p 1289 of the
journal).
A.E. Robson (England) - "A New Theory of the Cathode Spot"
(see P 1295 of the journal).
L.N. Breusova - "Positive Column in a Hydrogen Discharge
With Stationary and Pulse Loads".
I.G. Nekrashevich and A.A. Labud - "Current Distribution on
the Surface of Electrodes in Electric Pulse Discharges".
L.S. Eyg - "Some Properties of Gas Discharges in Low-voltage
Cardq/15 in Halogen Countersil. k

66702
5011/109-4-8-22/35
Report on the Second All-Union Conferonco on Electronics
G.I. Glotova and V.L. Granovskly - "Ca=paxiaon of the
Initial De-ionisation in the Isoto-pes of Hydrogen (H
;And D)11.
L.A. Akollzina communicatod rostilt-n on the pre-breakdown
current pulses at low pressures.
M.Ya. Vasillyeva and A.A. Zaytsev - "Charge-density
oscillation Waves in Cylindrical Plasma".
L. Pekdrek of Czechoslovakia communicated some information
on the wave-like phenomena in gas-discharge plasma.
B.G. Brezhnev dealt with the problem of the deteradnation.
of the energy of fast ions in pulse discharges.
B.B. Kadomtsev - "Convection Instability of a Plasma String
5.1. Braginskly and V.D. Shafranov - "Theory of a High-
temperature Plasma String".
The fifth section was presided over by N.A. Kaptsov and
dealt with hIgh-frequency currents in gases. The following
papers were read:
V.Ye. Golant - "Formation of Ultra-high Frequency Pulse
Cardlo/15 Discharges in Inert Gases".

66702
SOV/109-4-8-22/3
Report on the Second All-Union Conference on Gas ilectronics
G.I. Pateyuk - "Influence of the Boundary Conditlons.on
the Formation and Maintenance of High-frequency Discharges".
P.S. Bulkin et al. - "Investigation of a Self-maintalned
Ultra-high Frequency Pulse Discharge and the Process of
its Development".
G.N. Zastenker and G.S. Solntsev - "Some Results of the
Investigation of the Formation of Low-pressure High-
frequency Discharges".
G. Margenau (USA) - "Conductivity of Weakly Ionised
Plasma".
A.A. Kuzovnikov - "The Conditions of Transition From
High-frequency Corona Discharge at Atmospheric Pressures".
V.Ye. Golant - "The relationship Betwee-,-,L the Character-
istics of -the Ultra-high Frequency Current and the Direct
Current in Gas Discharges".
B.B. LagovIyer analysed the conductivity of the disin-
togrntiiiF p1n.-imn lit tho window of." ti rovottntic* dincliargo
tube.
S.M. Levitskiy and I.P. Shashurin dealt with the
Ca.rdll/15 applicability of the probe method to high-frequency
A-

66702
SOV/109-4-8-22/35
Report on the Second All-Union Conference on Gas Electronics
discharges (see p 1238 of the journal).
The paper by V. Ye. Mitsuk et al. was devoted to the
investigation of the ultra-high frequency plasma by
means of the Stark effect.
G.S. Solntsev et al. dealt with the problem of electric
fields in a high-frequency discharge at low pressures.
Ye. Bodereu of'Rumania read a paper entitled "High-
frequency Discharges in Nethane".
The work of the sixth section was devoted to the problems
of plasma and its radiation; the section was presided
over by V.A. Fabrikantr The following papers were read:
Yu.M. Kagan "Ne;k7iYin+Ue~robe Methods of Plasma
InvestigationV
V.I. Drozdov - "Oscillographic Measurements in Plasma".
V.A. Simonov and A.G. Mileshkin - "Investigation of the
Movement of Plasma by Means of a Mass Spectrometer of
the Transit Time".
A.V. Rubchinskiy - "Application of the Oscillations on a
Small Anode to the Measurements of the Vapour or Gas
Cardl2/15 DonsitY" (Soo P 1311 o-C -the journal).

66702
sovioq-4 8;22/35
Report on the Second All-Union Conference on &a Electronics
A.A. Timofeyev - "Measurement of the Gas Density During
the Dynamic Operation of a Discharge" (see P 1306 of
the Journal).A.V. Nedospasov - The Nature of a Striated
Positive Column".
V.1. Perell and Yu.M. Kagan - "The Theory of Probes for
Arbitrary Pressures".
Yu.M. Kagan et al. - "The Positive Column of a Discharge
in a Diffusion Regime".
M.Y. Konyukov - "Influence of the Processes of the
Annihilation of the Negative Ions on Their Concentration
in the Column".
M.D. Gabovich and L.L. Pasechnik - "Anomalous Scattering,
Excitation of Plasma Oscillations and Plasma Resonance"
Yu.L. K11mantovich - "Energy Lost by Charged Particles for
the Excitation of the Oscillations in Plasma (the Langmuir
paradox)" and "The Theonjof Non-linear Plasma Oscillationsu.
Ye.G. Martinkov and I.G. Nekrashevich - "Dependence of
the Temperature in the Near-electrode Region of a Pulse
Discharge on the Material of the Electrodes".
Cardl3/15 k

66702
sov/iog-4-8-22/35
Report on the Second All-Union Conforonce ori Gas Electronics
N.A. Neretina and B.N. Klyarfelld - "Formation of Light
Spots on the Anode of a Gas Discharge (see p 1301 of
the journal).
N.A. Matveyeva -"Distribution of Binary Mixtures of Inert
Gases in a d.c. Discharge".
V.G. Stepanov and V.F. Zakharchenko - "Some Phenomena
in Rarified Plasma".
V.G. Stepanov and V.S. Bezel' - "The Possibility of
Obtaining Highly Concentrated Plasmas".
G.V. Smirnitskaya and E.M. Reykhrudelk - "Some Character-
istics of the Discharge in an Ion Pump and in a Magnetic
Ion:Lsat:Lon Vacuum Gauge".
Ye.T. Kucherenko, and O.K. Nazarenko, - "Properties of
a Discharge with Electron Oscillations in a Magnetic
Field" (see p 1253 of the journal).
The paper by L.M. Biberman and B.A. Veklenko, considered.
the approximate methods for determining the concentration
of atoms at the radiation levels.
Card 14/15

66702
sov/log-4-8-22/35
Report on the Second All-Union Conference on Gas Electronics
I.I. SobellmAn and L.A. Vaywohteyn road a paper on
"A Non-stationary Theory of the Stark Broadening of the
Spectral Lines in Plasma".
M.A. Mazing and S.L. Mandellshtam - "The Broadening
and the Shift of Spectral Lines in a Gas-discharge Plasma*.
R. Lunt (England) - "The Kinetics of Electron Collinions
Leading to the Excitatlon of the Molecular Hydrogen in
a Hydrogen Discharge".
V.N. Kolesnikov et al. - "Some Properties of the Are
Discharge in an Atmosphere of Inert Gases".
A.A. Mak and M.P. Vanyukov - "Productlon of High
Temperatures By Means of Spark Discharges".
Card 15/15

SOV/126-7-6-14/24
AUTHORS: Sj~,:Lvak1i-.Q1.V.7 Yurasova, V.Ye.j Klenova, A.I. and Vlasova,T.A.
TITLE: On the Exposure of the Structure of Metals by Gas Ion
Bombardment
PERIODICAL: Fizika metallov i metallovedeniye, 1959, Vol 7, Nr 6,
pp 893-898 (USSR)
ABSTRACT: In order to show the possibilities of revealing the metal
structure of a heated material by a cathode sputtering
method, the authors investigated several characteristic
alloy.~o. Atomizing of the specimens at a definite
t eftl 13erature ti~as eiirvlod Out in the apparatus for the
ionic etching of metals UIT-1. U,*.od tiy Sptva.k et al.(Ref 3),
in which there is a special device for 114~?Acitqg tho
specimen (from 100 to 7000C) and for measuring its
temperature, Sheet specimens of an Al-Mg alloy (6% Mg)
were submitted to ion botubardment at 5000C. Cathode
sputtering (together ifith selective evaporation which
takes place at such a temperature) reveals the grain
boundaries of an Al-Mg alloy (6.5% Mg) heated to 500*C.
In Fig lb the surface of this alloy, etched with neon ions
Card 1/5 at 2800C and in Fig la the structure of the same alloy
. revealed bv cathode sputtering at 500*C are shown. From a

-oil the Exposure of the Structure of Metals by Gas Ion Bombard-mt?~-~-,
comparison of these photographs it can be seen that
5000C the grain size of the alloy is considerably coar4er
and the grain boundaries are finer. Apart from this
alloy,etching of specimens of steel YalT was studied
with the apparatus UIT-1. In this case, chromium
carbides precipitate(] along the grain boundaries at 5000C.
The presence of chromium carbides after chet-,Acal etching
is only apparent from the holes where the carbides were
attacked. By means of ionic etching at 6000C the
chromium carbide precipitates along the grain boundaries
could be seen in the form of small dark spheres of
approximately 1 to 2~L diameter. A photograph of the
surface of steel YalT specimens etched at 6000C and
fey-rite
,iiibsequently cooled is shoim in Fig 2. In Fig 3
and atistenito grains revealed as a result of cathode
of HIC Steel YaIT are shown. In Fig 4 the
structure or ptiro. miuminium sheet is shown (.I - after
chemical etching: b - after etchitig by ion bombardment).
The extent to -.i-hich the metal structure is rovoaled can
be best judged by the depth of etching of the intergranular
Card 2/5 boundary. Therefore, in order to select the correct

SOV/126-7-6-14/24
On the Exposure of the Structure of,Metals by Gas Ion Bombardment
sputtering treatment, the dependence of the depth of metal
grain boundary etching on the parameters of the gas
discharge during simultaneous sputtering was studied. The
depth of the boundaries was measured by a stexwscopic
method. A quartz print was taken from the atomized
surface of the specimen and a precise portion of this
print was photographed in the electron microscope UEM-100
under an angle of +6 and -60 relative to the optical axis.
The stereo-couples obtained (Figs 5a and b) were studied
with the precision stereometer SM-3, which gives the
volume effect. In order to obtain more reliable results,
the atomizing of the grain boundary was studied in neon
and in air for several types of technical copper with two
different instruments. Ionic etching of the specimens
was carried out initially in a glass tube. The investi-
gated specimen was used as the cathode in the tube. During
atomizing, the specimen temperature was kept constant by
cooling it with water. The dependence of the depth of
etching of the grain boundary on the potential difference
between the cathode and anode during atomizing in neon
Card 3/5 was determined. The density of the discharging current

SOV/126-7-6-111/24
On-the Exposure of the Structure of Metals by Gas Ion Bombardment
was kept constant (j = 10 mA/cm 2). The results of the
measurements carried out are shown bv the curve 3 in Fig 6.
The dependence of the depth of etching of the grain
boundaries on the density of the dischargingr current was
studied on two types of specimens which were cut out from
technical copper of somewhat different compositions. The
density ~f the discharging current varied between 5 and
15 mA/cm ; the potential difference between the electrodes
was kept constant at 5 W. The specimen was atomized for
5 mins. The dependence of the depth of etching of the
grain boundaries on the density of the discharging current
was found to be linear (Fig 7). From an analysis of the
curves obtained for the dependence of the depth of etching
of the intergranular metal boundaries on the density of
the discharging current and on the potential difference
between the electrodes it is possible to arrive at the
following conclusions: there is no advantage in raising
the potential difference between the cathode and the anode
above 8-9 kW to accelerate revealing the metal structure.
It is better for the density of the discharging current to
Carcl 4/5 be increased. The greatest permissible density of the

SOV/126-7-6-14/24
On the Exposure of the Structure of Metals by Gas Ion Bombardment
discharging current in cathode sputtering of metals is
determined by the intensity of the cooling rate of the
specimen. In the case under consideration, in which the
atomized specimens were cooled in a mixture of dr~ ice
and alcohol, a current density exceeding 15 mA/cm should
not be used. However, at a more intensive cooling rate,
greater discharging currents can be used. The best
operating conditions for atomizing technical coper aret
j = 10 mAlcm2, u = 9 kW, t = 5 min, P = 5 X 10- mm H9 col.
There are 7 figures and 7 references, 5 of which are
Soviet, I Engljsh and 1 German.
ASSOCIATION: Moskovskiy gosudarstvennyy universitet imen�
M. V. Lomonosova (Moscow State University imeni M.V.Lomonosovj
SUBMITTED: January 25, 1957 (Initially)
November 12, 1957 (After revision)
Card 5/5

AUTHORS: Spivak, G. V.,, Lyubehenko, V. I. SOV/413-23-6-8/28
TITLE: On the Resolving Power of Immersion Objectives in the Presence
of Electric and Magnetic Microfields (0 razreshayushchey sposob-
nosti immersionnogo ob"yektiva pri nalichii elektricheskikh i
magnitnykh mikropoley na katode)
PERIODICAL: Izvestiya Akademii nauk SSSR~ Seriya fizicheskaya, 1959, Vol 23,
Nr 6, pp 697 - 705 (USSR)
ABSTRACT: In the introduction, short reference is made to papers in which
the domains of ferromagnetics and ferroelectrics are inves-
tigated, and the structure of electric and maanetic microfields
is investigated. The fields behave like microlenses, nodulate
the electrons passing through, and make it possible to investi-
gate the microstructure. When emission systems are used for the
investigation of emission center distribution on the cathode
surface, the microlenses of the cathode produce a "pseudocontrast"
in the image of the emission. In the second part of the present
paper the influence exercised by the macrolenses upon the
contrast range of the microlenses is investigated. The equations
of motion of the electrons in the magnetic and electric fields
Card 1/3 serve as a basis and solutions are found for the position

On the Resolving Power of Immersion Objectives in the SOV/48-23-6-a/2a
Presence of Electric and Magnetic Microfields
coordinates of the electrons. The results obtained are quali-
tatively given in a table for various combinations of macro-
lenses. When dealing with the resolving power of immersion
objectives without microlenses on the cathode, the paper by
Artsimovich (Ref 7) is mentioned among others. In these papers
the resolving power of emission systems with larger aperture
had been investigated. Moreover, resolving power was investi-
gated in the case of the use of mechanical diaphragms. Much
space is given to the treatment of the enlargement of photo-
optical immersioL objectives and to the irising of the electron
beam by magnetic fields acting on the cathode. Formula (18)
is developed for the resolving power. In the last part of the
paper, calculation of the resolving power of immersion objectives
according to the method of the "sightingihit" is dealt with.
Again, the equations of motion serve as a basis, and if
E = H = 0, a formula for the resolving power is obtained.
x z Q
Next, the influence exercised by the electric microfields is
Card 2/3 investigated, and for the deterioration of resolving power,
formula (24) is given. In conclusion, the enlargement of photo-

On the Resolving Power of Immersion Objectives in the SOV/48-23-6-8/28
Presence of Electric and 11agnetic Microfields
optical objectives and irising by magnetic fields is investi-
gated in the same manner. There are I table and 22 references,
11 of which are Soviet.
ASSOCIATION: Fizicheskiy fakulltet Moskovskogo gos. universiteta im. M. V.
Lomonosova ( Physics Department of the Moscow State University
imeni M. V. Locionosov)
Card 3/3

AUTHORS- Spivak, G. V. , -Pryr:smko,;ra, 1. A., igras, E. SOV/48-23-6-15/28
TITLE: On the Investigation c-f t-he Domains of Forromagnetins and
Perroelentrics by Means of an Electron Mirror (0 nablyudenii
domenov ferromagnet-ikov -- se6qietoelektrikov pri pomoshchi
elektranncgo zerkala)
PERIODICAL: Izvest--'L,-a Akademii nauk SSSR. Ser.ya f~z-:.cheskaya, 1959,
Vol 239 Nr 6, PP 729--733 (USSR)
ABSTRACT: In the introdue-tion the advantages offered by the electron
mirror, as e.g. the fact that here the object is not bombarded
with electrons and a considerable resolving power existsq are
enumerated.The working methods with electron mirrors have
already been dealt with by the authox-s in papers published at,
an eaxlier date (Refs 1, 2), whil,~, others investigated the
resolving power. The infiuence exercised by the strong macro-
field upon the weak minrofields of the surfaoe is dealt with,
and rafaven-:* i,3 made to the aforementioned papers. Further,
the mechardsm. of o3ntrast formation is dealt with in the intro-
duction. The se~:ond part deals w-ith the investigation of the
structure of demaj,n-s of monocTystalp- of" ferromagnetics in the
Card 1/2 elerjtror, mirror. In this c!onnactl-,)n~ the investigations carried

On the Investigation of the Doma-_ns of FerrGmagne tic. a SOV/48-23-6-15/28
.and Perroelectrios by Means of an Electron Xirrcr
out by the authors in 1955 (Ref 1) are mentioned, in which the
possibility of ob-ta.-ning a magnetic contrast was pointed out.
An instrument of this construction with axial symmetry is shown
by figure i.To the-!'act that the elections move very slowly in
the range of Tetiecting eleotrodes, the high degree of sensitiv-
ity of this method is ascribed~ because the electric and
magnetic miorofields are very weak. Figures 2-5 show examples
of micropictures, v-*Lz,, first ordinary structural pictures
compared with elsettron-optio-al Images of the domains, and
further, p-_1,1-;ti,_re8 taken in warlovs magnetic fields are compared.
The investigation of the structure of the domain in ferro-
magnetics is fi-nall.y dealt wlth and Is supplemented. with
examplee. F4na7ly, further development was investigated and
found to be promising. There are 9 figures and 7 references,
3 of which are Soviet.
ASSOCIATION: Fizicheskiy fakulitet MDskovBkogo gos, universiteta im. M. V.
Lomono8O-Ta (Physical Department of the Moscow State University
Card 2/2 imeni M. V. Lomortosov)

SOV/48-23-6-16/28
AUTHORS: Sbitnikova, I. S., Spivak, G. V., Sarayeva, I. Y.
TITLEi Electron Microscopy of the Temperature Variations of the
Magnetic Microstructure of Ferromagneties (Elektronnaya mikro-
0
skopiya teaperaturnykh izmeneniy.magnitnoy mikrostruktury ferro-
magnetikov)
PERIODICAL: Izvestiya Akademii nauk SSSR. Seriya fizicheskaya, 1959,
Vol 23, Nr 6, pp 734 - 737 (USSR)
ABSTRACT: In the introductiontolder works (Refs 1,2) by the authors and
others are mentioned, in which an electron-optical method is
described, by means of which an image of the magnetic micro-
fields is obtained by secondary electrons. Although the micro-
fields have a field strength of about 1o4 oa, the images are of
poor quality. In the present paper experiments, which were
carried out for the purpose of developing methods of investi-
gating magnetic microstructure, are described. Particular
account is taken of the use of secondary emission microscopes
for the investigation of the dynamics of thermal processes. On
the basis of results obtained by other investigations (Refs 4,5),
the damaging of the object surface by electron steel and the
Card 1 decrease of this damage is discussed. The secondary emission

Electron Microscopy of the Temperature Variations of the SOV/48-23-6-16/26
Magnetic Microstructure of Ferromagnetics
microscooe used in the investigations dealt with has already
been described in detail by another of the authors' paper
(Aef 2); it has an anode voltage of not more than 10 kv. Three
pictures (Figs 1,2) are given as examples. The structure re-
corded by means of a metal microscope is compared with its
magnetic contrast, and information is obtained concerning the
formation of the magnetic contrast. The whole-metal construction
of a secondary emission microscope, which was worked out for
the purpose of avoiding the occurring aberration, is then
described. By iaeans of this instrument the authors investigated
the influence exercised by temperature upon the magnetic micro-
structure. Exoerlments carried out with cobalt monocrystals
show a sudden change of the domains with temperature. The
additional device constructed for the purpose of heating the
object is briefly described, and, finally three pictures (Fig 4)
are shown as examples of structural domain changes at various
temperatures. There are 4 figures and 8 references, 5 of which
are Soviet.
Card 2/~_

LUTHORS: Krokhina, A. I., Spivak, G. V. 3OV/48-23-6-18/28
TITLE: Investigation of the Structural Changes of Dielectrics Which
Ire Under the Influence of Temperature, Chemical Attack, and
Ian Ionic Bombardment (Izucheniye strakturnykh izmeneniy di-
elektrikov, podvergnutykh vozdeystviyu temperatury, khimiches-
kogo travleniya i ionnoy bombardirovki)
PERIODICAL: Izvestiya Akademii nauk SSSR. Seriya fizicheskaya, 1959,
Vol 23, Nr 6, PP 741 - 743 (USSR)
ABSTRACT: The authoisfirst refer to previous papers by themselves
(Refs 1,2), in which they showed that by the bombardment of
dielectrics with ions attack figures are produced. These
figures show the ionic structure of the crystal. The structure
of these figures is similar to that after a chemical attack.
In the present investigation, the crystals of a number of di-
electrics with different orientation of the crystal axis were
prepared. The investigated crystal planes of the various crystals
are then given, and the structures obtained in this way
(Figs 1-6) a:.- sho,,m- !)y i3--1x figa-es. S'1_
!Tte method described ha-
certain diradve-n-bages because the foca3ing of the microlenses de-
Card 1/4 pends upoa the discharge current and the air pressurre in the tubei-

Investigation of the Structural Changes of Dielectrics SOV/48-23-6-18/28
Which Are Under the Influence of Temperature, Chemical Attack, and an Ionic
Bombardment
and further because the discharge cur:nnt in die3i-actrics can be
accomDlished by the use of netal cont-actu nets.
In order to inhibit the influence of temperature
and the variation of ion-current density on the dielectric,
tubes with intense water cooling were used. In order to elimi-
nate the disadvantage of the metallic nets, a new method was
developed, by means of which the dielectric is heated to such
temperatures at which it is in a semiconductor state. By means
of the instrument UIT-1 rock salt was treated for 3 hours at a
temperature of 4000C, an accelerating voltage of 3 kv, a
current of 3 ma, after which it was investigeted by means of
an electronic microscope. Figure 3 shows the result obtained.
By means of this method, the influence exercised by the evapora-
tion of the dielectric and the critical temperature for the
intense evaporation of the dielectric were investigated. The
result obtained shows that the structure formed by evaporation
of the dielectric is identical with those obtained by applying
Card 0 the two other methods. There are 6 figures and 5 Soviet refer-
ences.

AUTHORS:
TITLE:
Yurasova, V. Ye.,_S-pivak, G. V., SOV/48-23-6-19/28
Kushnir, F. P.
Methods for the Development of the Structure of Metals and
Alloys by Ion-bombardment (Metodika Yyyavleniya struktury metalloy
i splavov ionnoy bombardirovkoy)
PERIODICAL: Izvestiya Akademii nauk SSSR. Seriya fizicheskaya, 1959,
Vol 23, Nr 6, pp 744 - 749 (USSR)
ABSTRACT. In the first part of the present paper ion-etching of the
granular boundaries and of the structural composition of the
alloys are investigated within a large temperature interval.
First, the advantages of cathodic spraying as against chemical
etching and thermal evaDoration in a vacuum are pointed out. One
of the most important advantages is the possibility of carrying
out structural investigations within a large temperature inter-
val. For visual investigation and for photographing a special
attachment was constructed (Fig 1). Seven pictures are then
shown of aluminum bronze (Pigs 2,3), which were taken after
various forms of thermal treatment by ion-spraying and cathodic
Card 1/2 spraying and 350-fold enlargement. The first series of picturea

Methods for the Development of the Structure of Yletala and SOY/40-23-6-19/28
Alloys by Ion-bombardment
distinctly shown the formation of the martensite structure in
the three range6 of temperature , whereas the second series
shows the structural grains at various temperatures. In the 3e-
cond part of the paper the destruction of the surface of the
structural grains of polyorystals or of monocrystals by ion-
bombardment is investigated. Pirst, the fact is pointed out that
by the investigation of the symmetric indentations,our knowledge
of the mechanism of.cathode-spraying has been extended, and that
new possibilities of applying ion bombardment may now be found.
It follows from the pictures (Fig 5) that the symmetry of
orientated indentations agrees with the orientation of the sur-
face of a monocrystal. In the following, the influence exercised
by the increase of ion energy is investigated and explained on
the basis of figure 5. The results obtained make it possible
to assume that the orientated indentations may form in the course
of ion-etching. There are 6 figures and 7 references, 5 of which
are Soviet.
ASSOCIATION; Fizicheskiy fakulltet Moskovskogo gos. iuniversitet im. M. V.
Lpmonosova (Physics Department of Moscow State University imeni
Card 2/2 M. V. Lomonosov)

M
AUTHORS: Dubinina, Ye. M., $pivak, G. V~, SCV/AS-23-6-23/28
Pryamkova, I. A.
TITLE: The Obtaining of Images in the Pu,1se Principle in the
Emission Microscope With High Resolving Power(O poluchenii
izobrazheniy v impul'snom rezhime v emissionnom. mikroskope
vysokogo razresheniya)
PERIODICAL: Izvestiya Akademli nauk SSSR. Seriya fizicheskaya, 1959,
Vol 23, Nr 6, PP 762-7641 (USSR)
ABSTRACT: In the introduction to this paper it is shown that by
investigating pulsed emission in an emission microscope, it ia
possible to investigate the conditions on active cathodes in
pulsed operation. Images of the emitting cathode in normal
operation are compared with those in pulsed operation. The
impulse increase exercises considerable influence upon
resolving power. The work described was carried out by means
of the industrial electrostatic microscope ESM-50, which has
an immersion object with 150--fold enlargement. The block
scheme of the current oupply of the instrument is shown (Fig 1)
and discussed. 1.s examples, two pictures (Fig 2) of the cathode
Card 1/2 in steady and in pulsed operation are shown; the pictures were

The Obtaining of Images in the Pulse Prin,::iple sov,142-23-6-23/28
in the Emission Microscope With High Resolving Power
not found to differ. A further investigation carried out on
an L-cathode also showed no essential differences. Finally,
the possibility of using pulsed operation when investigating
the domain structure in ferromagnetics and ferroelectrics is
shown and a stroboscopic arrangement is described by means
of which images of the domain structure with higher
resolving power were attained. There are 3 figures and 3
Soviet references.
ASSOCIATION: Fizicheakiy fakul'tet Moskovskogo gos. universitet im. M- V.
Lomonosova (Physics Department of 'Moscow State University imehi
M. V. Lomonosov)
Card 2/2

PHASE I BOOK EXPWTZATION SOV/4337
Spetsialtnyy fizicheskiy praktikum, tom. 1: Radiofizika i elektronika
(Special Practicum on Physics,, Vol. 1: Radio Physics and Electronics)
(Moscow] izd-vo moskovskogo univ.,, 196o. 600 p. Errata sl-ip inserted.
10J,000 copies printed.
Compiler and Ed.: G.V* Spivak, Member of the Faculty of the Physics Division of
Moscow Universiti, -Ed..* (Inside book): I.A. Nosyreva; Tech. Ed.: G.I.
Georgiyeva.
PURPOSE: This book is intended for university students in physics.
COVZRA=.s This is the first volwAe of a miltivolumed work in physics approved
by the Ministry of Specialized Higher and Secondary Education as a textbook
at the uzdvers-Ity level. Volume I presents a description of laboratory tests
in radiophysics and electronics. The volume is divided Into 2 parts. Part I
reviews oscillatory systems., rexUo waw propagation and acoustics; the second
part contains problems relating to h-f electronics and pbysics. The authors
of the work are faculty members of the Radio Physics Section of the Physics
Department of Ybscov University. Chapter I of Part I was written by
C

FH[,SE I BOOK EXPLOITATION SOV/4705
FaAiofizicheskaya elektronika (RiLdiophysical Electronics)(Moscow]Izd-vo Mosk.
univ.., 1960. 561 p. Errata slip inserted. 15,000 copies printed.
Ed.: N. A. Kaptsov, Professor; Tech. Ed.: N. S. Yermskov.
PURPOSE: This book has been approved by the Ministry of Higher and Secondary
Special Education,, USSR, as a textbook for sch661s of higher education.
It can be also used by tcientific personnel working in the fields of radio
engineering and electronics.
COVERAGE: The book presents problems of vacuum, cathode, semicanductorp and glLs
electronics., on which is based the operation of vacuum-tube and gas-filled
devices, including microwave devices and also apparatus and instruments used
in electron optics. It is assumed that the readers of this book bavea pre-
liminary preparation in the fundamentals of nuclear physics, quantum
mechanics., statistical physics and electrodynamics. The book was written by
a group of lecturers of the Physics Division of Moscow State University.
Card lj~a,

Wiophysical Electronics
sov/4705
Chapters I. II, and III were written by Professor N. A. Kaptsov; Ch. IV. by
Professor S. D. Gvozdcver,- and Docent V. M. Lopukbin; Ch. V. by Professor
G. V.-gPivak and Assistant Ye. M. Dabinina; Ch. VII. by Docent A. A. 7Aytsev
-Eid-Profesg-or N. A. Kaptsov,*, Ch. VIII. by Professor N. A. Naptsov and Assist-
ant G. S. Solntsev. The authors thank Professor S. Yu. Luklyanov and Docent M.D.
Karasev , who reviewed the book. There are 76 references: 68 Soviet (in-
cluding 14 translations), 6 English, and 2 German.
TABLE OF CONTENTS:
Foreword
Ch. 1. Subject of Physical Electronics. High-Vacuum Electronics 9
1. Introduction 9
2. Transmission of electric cux-rent through a high vacuum 13
3. Space charges in gaseous, liquid and solid media 21
4. Physics of electron tubes 21
Ch. II. Semiconductor Electronics 29
5. Electron energy levels in crystals 29
6. Impurity semiconductors 32
7. lAw of electron distribution along the separate energy levels
in semiconductor energy bands 36
8. Density of energy states in any energy band of a crystal 39
Card 27-1-~r-

Padiophysical Electronics
SOV/4705
50- 1~_--flex klystron 194
51. Trawling-wave (W) tube 205
52. Back-ward-va-ve oscillator (BWO) PP9
53. Magnetron 234
54. Space-charge effect. Concept of space-charge longitudinal
wa,4r-, s 249
55. Electron-wave tube (EnN) 264
Ch. V. Electron Optics 271
56. Subject and prcbljems of electron optics 276
57- Optical properties c.' alectric and magnetic fields with
axial symnetry 276
58- Lense,3 of electron optics 281
59- Magnetic lenses 282
60. Electrostatic lenses 286
61. Ricrolenses 303
62. Electronic mirror 305
63. Geometrical aberration 307
64. Chromatic aberration 314
65- Fesolution of electron-optics instrments. Space-charge
effect and certain methods of correcting lenses 318

F42.Uophysictal Ej.r~ctronics
SOV/4705
66. Electron guns 321
67. Cathode-ray oscillographs 329
68. Blectron-optics devices realizing transformation operations 330
69. Electron microscope 341
70. Double focusing in a mass spectrograph 353
Ch. VI. Electric-Discharge Formation in Gases 356
71. Nature and special features of the movement of free electrons in
a gaseous medium 356
72. Diffusion and mobility of charged particles in a discharge 359
73. Theory of mobility 364
74. Dependence of effective atomic or molecular cross section on
tbe speed of tne interacting electron 367
75. Independent and dependent electric discharges in gases 371
76. Avalanche theory of discharge 373
',77. D:,-pendence of factor 0( on electric field intensity6 376
78- W. Rogowskils theory 381
79. D--pendence of avalanche-discharge igniting voltage on product
,pd and other conditions 384
Card

S/058/61/000/012/060/06,3
A058/AlOl
AUTHORS: Sbitnikova, I,C., Spivak, GV, Sarayeva, I.M,
T=- Temperature variations of the magnetic microstructure of ferromag-
netics detected by means of secondary electron emission
PERI06ICAL: Referativnyy zhurnal. Fizika, no. 12, 1961, 384, abstract 12E694
(V sb. "Magnitn. struktura ferromagnetikov", Novosibirsk, Sib. otd,
AN SSSR, ig6o, 41 - 46)
TEXT: Using the technique worked out earlier (PZhFiz, 1954, no. 9, l0419~
1956, no. 10, 2916_3; 1957, no. 12, 30558), magnetic microfields set up by marten-
sitic needles in a steel specimen were observed in a secondary-emission electron
microscope. Weakening of these fields wiih increasing temperature was observed.
A change in and weakening of domain-scattering fields on the hexagonal surface of
a Co single crystal incident to heating to 2400c was also observed,
N. Serov
[Abstracter's note.- Complete translation]
Card 1/1

S/O 58/6 1/000/0 12/055/0 83
A058/A101
AUTHORS: Spivak, G.V., Pryamkova, I.A.
TITLE- Development of an electron-mirror method for visualizing domain
structure is ferromagnetics
PERIODICAL: Referativnyy zhurnal. Fizika, no. 12, 1961, 383, abstract 12E685 (V
sb. "Magnitn. struktura ferromagnetikov", Novosibirsk, Sib. otd. AN
SSSR, ig6o, 185 - 189)
TEXT- There is described a glass model of a direct electron mirror in which
in contrast to earlier models (RZhFiz, 1956, no. 9, 25867) - the reflected and the
primary electron beams are not,specially separated. The primary beam passes
through an aperture in the screen, approaches the investigated object, is reflect-
ed and, after being focused, hits the screeri. This makes it possible to increase
the magnification and sensitivity of the instrument. With the aid of the describ-
ed,electron mirror there were observed domain structures in different ferromag-
netics, A metallic model of the direct electron mirror with electron-optical mag-
nification,-,-,250-is also described. Problems are discussed concerning formation
of images of domain microfields in the mirror.
[Abstracter's note- Complete translation] N. Sedov
Card 1/1

S/058/6 1/000/0 12/054/083
A058/A 10 1
AUTHORS: Spivak, G.V., Shishkina, Ye.I., Yurasova, V.Ye.
TITLEi Concerning a method for detecting magnetic inhomogeneities
PERIODICAL% Referativnyy zhurnal. Fiiika, no. 12, 1961, 383, abstract 12E684 (V
sb. "Magnitn. struktura ferromagnetikov", Novosibirsk, Sib. otd. AN
SSSRJI 196o, 191 - 194)
TEXT: The feasibility was demonstrated of detecting magnetic inhomogenei-
ties on the surfaces of ferromagnetics by means of chemical etching. The indi-
cated method is based on the fact that ions in solution that have a magnetic
moment are drawn into the region with the highest magnetic-field gradient. The
most effective etchants and etching conditions were found by the trial-and-error
method. 'Using the described method, an electron-microscope image was obtained of
magnetic inhomogeneities in an artificial specimen built up of alternate Permen-
dure and Mo bands, as well as an image of natural magnetic inhomogeneities in
martensitic needles in steel.
N. Sedov
[Abstracter's note: Complete translation]
Card 1/1

AUTHORSt I'll V1kh11^,~1a, R.P. Zhd... A.G.
T
H.N., !..k. 6.V..
A.E* and To... P!o!
A. A
TITLLt Report on the Ninth All-Union Conference on-Cathod*
EJet tr..i..
1960. Vol 3. 4~ 5,
pP8 6-879 ( USS A)
AUSTRACTt This conference took place In Moscownf"m 2!-211h
October 1959 with the participation f I .1.ntj.tm
end Cr.- 11-4.ry, E.:!-%G.Tmany~ the Chi.*.*
nd .. I
people.. R.Pblt. Ch ~ k. . Th. that- of
Ih d-ition V*k.ht..k&y.
p rt consist. ""'I 7:bk" r 2!.j. Per.
Th:.r., of brl I r:tt,,,
r e ted I t Plenary he !. Me of
5 Re 'is were P,:d
the conference. I p .. t.d in the section
on surface properties oor ..lid. dealt.& .1 1h
city. surface
P!t*
C
t% h (1,1-1a: on
Card 1/2 -faces .... d,.c.u..l.d. 6 F.p.t. . nth
- ----- physics of cathode. are gi- I. the
it.. on th.r.i I. mission. 17 1,, a
,:r
pr ... nt.d I. the ::cti.n an photo. '*'-
Many papers discussed industrtal t.1hoTog, -.fhol...11.
p is
nda~~It ipli*r.. 16 pr:.:. d..t.th. action
..I on t .
-d-y;-1-tron - - Th field
ii paper. di ...... Put..
high or ... t urf... phd
Id on --de"
or memtconductorm)~and the -r-
And bri D.
cathode. More r covc~unlcatio
t he ...trs t 0
:are presented !ha--5U p pion 0. prop r I .. ... type;
'd technology of cathode., relating to the tachn0l..
thod:,,r!h.,.ir b aviour in
:h
p-t="1'd!w !n. h - of
*f YP::. ~h
individual cat 19 Pap,rotw,r, zM".1:t the
tho"..
section on interaction of -Lid b.di.. with tr.... of
charged partl' I.:.and residual Samoa. Notes of
di u Job Indicated that sever.1 sharp end
Card 2/2 critical *xcaeftx.. or view. took place.

s/log/60/005/008/023/024
7- 0 (lo X31 // ?;71 // ~/a) E192/E382
AUTHORS: Sirotenkog I.G., ~.pivakG.V_ and Groman, A.
TIT-LE, Field Emission from Filamentary Semiconductor
Monocrystals or Whiskers
PERIODICAL, Radiotekhnika i elektronika, 1960, Vol. 5,
No, 8, pp~ 1348 - 1350
TEXT,. The work reported deals with the manufacture of
semiconductor whiskers and measurement of their field emission,
It appears that the data relating to the field emission of
such monocrystals are lacking (Refs. 7, 8), The whiskers of
tungsten and molybdenum oxides obtained by the authors are
larger than the usual micro-whiskers, The whiskers are
produced by the following technique, A small quantity of
tungsten or molybdenum oxide was placed in a quartz tube
having a length of 15 cm and a diameter.of 6 mm, the tube
being closed at one end, The oxides were obtained by burning
fine wires in an oxygen atmosphere. By heating the lower end
of the tube in air a sublimation of the oxides was achieved
and the vapours condensed on the comparatively cold portions
Card lj~.
1;a/

S/109/60/005/008/023/024
E192/E382
Field Emission from Filamentary Semiconductor Monocrystals or
Whi8kers
of,the tube (see Fig. 1), A growth of whiskers occurred at
various areas of the tube, depending on the concentration of
the vapours and the temperature gradients, At very high
vapour concentrations the whiskers were in the form of dendrites.
In order to obtain the whiskers in a suitable form, a metal.loop
was introduced into the quartz tube and the whiskers were
grown on it (Fig. 1), After that the Wire loop was suitably
mounted in a gun and investigated, In the case of molybdenum
oxide, the whiskers were also obtained by the following method:
a spiral having a diameter of 5 mm and a length of 5 cin was made
of molybdenum wire and one of its ends was bent in the shape of
a loop; this was then placed inside the spiral so that the end
of the loop was roughJ-y in the zentre of the spiral; when the
end of the spiral was heated by an oxygen flame the molybdenum
was oxidised and the resulting oxide vapours were condensed on
the loop in the form of whiskers. The whIskers -were investigated
Card 2/4,

S/048MOFC24/06/03/017
B019/BO67
AUTHORS: Spivak, G. V Pryamkova, I. A., Sedov, N. N?
TITLE: On the Formation of the Electron Optical Contrast in the,
Observation of "Hollow Spots" in Emitters
PERIODICAL: Izvestiya Akademii nauk SSSR. Seriya fizicheakaya,
ig6o, Vol. 24, No. 6, pp. 640-646
TEXT: This is the reproduction of a lecture delivered at the 9-th All-
Union Conference on Cathode Electronics from October 21 to 26, 1959 in
Moscow. Contrast problems of emission*nd of quasi-emission (mirror-type)
electron optical systems were investigated. In the first chapter, the
authors describe the influence exercised by the normal and the tangential
component of the electric field on electron kineticst and in the second
chapter they deal with the mechanism of formation of the contrast. The
formation of "hollow spotsl*ue to local potential differences of the re-
flecting electrode is ;xpla-lned, and the faot'that the microfields of
these electrodes can be investigated at any temperature is shown to be the'
most important property of this type of electrodes. The influence
Card 1/3

82158
On the Formation of the Electron Optical 3/048/60/024/06/03/017
Contrast in the Observation of "Hollow Spots" BO1q/BO67
in Emitters
exercised by "hollow spots" on the resolving,power of an immersion ob-
jective is briefly dealt with, and in the following the local micro-
fields on emitting surfaces are discussed in detail. Here, "hollow spots"
observed by the authors on polished, well activated diodes consisting of
copper-aluminum-magnesium alloys and on rather smooth L-cathodes (Ref. 1)
are described.By comparing the secondary electron emission images and the
thermionic emission images the authors observed that the former are caused
by the roughness, and the latter by the inhomogeneities of the work func-
tion, i.e., by the "hollow spots". The formation of the contrast in oxide
cathodes was investigated in detail where the formation of the mirror
image,the thermal image, and the photoemission image were studied. For
this purpose, the combined electron microscope shown in Fig- 4 was used.
It was found that the geometrical relief of the cathode surface, the
"hollow spots" and the electric microfields play an important part in the
formation of contrast. In the final chapter, some typical cases of the
formation and the inversion of the contrast by superposition of micro-
fields are discussed. There are 5 figures and 10 Soviet references.
Card 2/,3

S,/048/60~024/06/09/01T
Boig/Bo67
AUTHORS: Sirotenko, I. G., Spivak, G. V.
TITLE: Pickling Demolition of Semiconductors by Ion Bombardment),
PERIODICAL: Izvestiya Akademii nauk SSSR. Seriya fizicheskaya,
1960, Vol- 24, No. 6v pp. 679-684
TEXT: This is the reproduction of a lecture delivered at the 9th All-
Union Conference on Cathode Electronics from October 21 to 28, 1959 in
Moscow. Cathode sputtering of semiconductor crystals and monocrystals1s
investigated (germanium, silicong lerritea). The aim of the present paper
'Was to extend the pickling by ion bombardment to a larger number of semi-
conductors, to get to know the type of eputtering for semiconductors, and
to develop the pickling demolition of the acmiconductor surface as they
occur in electronic devices and disturb operation. The initial cathode sput-
tering of semiconductor for the ion-pickling by the glow discharges in
two-electrode tubes filled with rare gasesshowed poor results. Better re-
sults were obtained by treating the targets in plasmas with high current
density and low pressure. The pickled germanium crystal surfaces shown
Card 1/2

82167
S/048/60/024/06/12/017
B019/BO67
AUTHORS: Krokhina, A. I,., Spivak, G. V.
TITLE: On the Prob,lem of Anisotropy of Cathode Sputtering of
Dielectrics -;-k
PERIODICAL: Izvestiya Akademii nauk SSSR. Seriya fizicheskaya,
ig6o, Vol. 24, No. 6, pp. 694-697
TEXT: This is the reproduction of a lecture delivered at the 9th All-
Union Conference on Cathode Electronics from October 21 to 28, 1959 in
Moscow. In the introduction, some papers on the destruction of metal
surfaces, dielectrics, and semiconductors by incident ions are discussed,
and V. Ye. Yurasov (Refs. 1, 7) is mentioned. In the present paper, ex-
perimental results are given which show that an anisotropy of cathode
sputtering in the bombardment of dielectrics with ions occurs, which is
caused by the structure of the ion beam. First the authors describe the
test tube shown in Fig. 1, and the target holder shown in Fig. 2. Figs. 3
and 4 show distributions of deposits on NaCl and KBr crystals which are
due to the inhomogeneities of the incident ion beam. The authors are of the
Card 1/2

SIROTENEO, I.G.; SPIVAK, G.V.
Exposure of boundary dislocations in germanium by ionic Lombard-
ment. Kristallografila. 6 no.2:2?4-277 Mr-Ap 161. (1.1IRA 14:9)
1. Moskovskiy gosudarstvennyy universitet im. M.V.Lomonosova.
(Germanium) (Dislocations in crystals) (Ions)

SPIVAK G V - VERTSNER V.N.; LUKIYANOVICII.. V.M.; IBVIN, Ye.Ye.;
..I.. -I __~. " P
1. 1 1 SKAKOV2 Yu,A*
Third All-Union Conference on Electron Microscopy. Radiotekh. i
elektron. 6 no.5:852-862 MY 161. (MIRA 1424 ','
(Electron microscopy---Congresses)

25791
s /0 _,18 / 6 10 J
F 104 'B2 01
AUTHORS: Spiva"," 111. V.. Sirotenkc. I. G., and IvanDv. R. D.
TITLE: Domain s~_-uc~ure of ferromagnetic films produced by cathode
?ERIODICAL: Akademiya nauk 38SR, Izvesti.va, Seri-ya fizicheskaya.
v. 25, no~ 51. 1,96,, 581-.583
TEXT: The vresent in,,-esti,,ation was the sub'iect of a lecture delivered
7
at a symposium on thin ferrorna_netic films ~Krasnoyarzsk, ju'y 4
I to 7,
ig6o). Cathode ~--putfoving w!is nerklormed in a pla.-zma under an intense
10-) m.'11 Ht-; 'I .The free-rath
discharge and at a low Oress~:re '_?-O'
len-th of sputtered aroms wa-s some 77:1at Ion,--er 'han the distance between
tar,~etl and base layer-, The appiLimen intended for sputtering was con-
nected as the third electrode wish a ne.-at-i-ve potential of I kv- A hot
cathode served fcr augmenting di:_-,clnari The
ge current and ion density,
dischar-e current vi-as of the order of ', ampere. while that directed or"o
'ne soecimen to be 3put*ered ,vas of *~e order cf 1 milliampe-re, The base
layers were made cf glass and arranged a~. a di'Otance .~f -2 --m, fr_-M the
Card 1/4'

slo-48,1`6 C _;' '55/0 0 5 // G 0 5 // 0 2 4
Domain structure of ferromasne-lic 0
target. The specimens tI- be sputtered Y:ere disk-shaped and had an area of,
The f ilm tinickness of permallcy s-.,2c im; a n s( 7 91/0 Ni, 17"' Fe ,
about 1 cm2
4/_'O Mc) changed lin-early soutterin`-- time (30-3~ minutes ,i, when
the specimen potential xa_o 800 T. the discharge current ?, a S r, 7 1~ a. the
xre was
,current dL-nsity to the specimen was 1.6 ma~sm and he pressu
'_ 3
9. 10 'mm Hg, At ~~Ie same ~iffile. the temperature of the specimens ranged
from 100 to 1?5LC Tne films "'crmed in a oersted magnetic field
r~ara.1~11 to the film, clane, tT- nn ali - es a
.vh'c,h was oritinted i o a e ng p-oc 8 S
i:oolk p-lace in a maL~,ne-i~~ ana1yses 5howed Thai +,here
was no difference bet-.-.;ePn -%e ~om,,)osition cl~' SL)uttered films and That of
the init'ial material ., Vre au-hors ,,;are able ~o obServe magnetic powder
patterns or. SOO hi!:k c~obait -I'llms. Tile direction oil easiest mag-
netizing co-incided wit,`, the mrag-reric field direction during the process
Of film sputtering. The sputtering of iron silicide -,ook place under the
iollowirg condit-~ons. the specimen potptial, -relative to the cathode was
700 v, the current density was 6 ma,cm the discharge current was I a,
the pressure was 6.10-3 mm Ha. The sputtering timeZ were 10, 20.. and
410 minutes. The wedge-shaped powder patterns observed on iron silicide
Card 2, 4

J, 21;_;C~,:! :-,5/024
S ~-,4 /61
:R, 1
Domain structure of ferromacrnettic
films with '~7i were orien,~ed in the field direc-con,_ -1 n f i I of the
abovementioned )erTa',lc,,,- oorzriponition.. produced under "linear" ccnditions,
i.d1sc,:arge cur---.-
the sputterinig rate aad tc be irncreaz-ed sharply -, ri, f .1 a
potential of specimen ',.2 k1r, current density tc 72,6 ma.,,rm-,
pressure 6-10-. mm H-) to obtaln distinct powder patterns, Differently
thick films of this type 9~iowed the domains to di-vide into equal intervals
Lrom the 17hickneps of onwards. In addition, !-~,e domain stru,~3ture
is somewhat increased ;;Al larger t-ickneE~ses.. anO tne -,-,,-3dges extend in
the fiel-d on a fur'.~,.e- increas_~~ -e we-,'EQ~_ are -rans'_~?~,mad
ir~-: Lianes -T~l PL-trallel -ides wl-'ch ar,~ cr`an'ed in "rL- Cie-fd di-E~~--ion.
T n-~! cox, f i -ura I- Lon c. f t il d oma in ~~_z be Orro~ 5 G I _~ C r i t, r-,~a C. '. C,
J_ eri me nt
results are -as Foll1c,,-,- 21,; :,~-: n '-e oa:! i I v pr7 Z:I%re~_' rom
any naterial by nathode m 3 C f ,-! 0. n. j can
be obtained und~~r we-11 ~-tcrtrt,"ed production corditlons,: (3) a gcrd
uniforr,--~ty oi- an-JI a Suff,,._~_iant of film p_-ep_~-raricn are
ensured: (d) 'i',ms thus pi-odu,7ed do nct differ ess.~ntial',y fr~:,m -,e lni-.ial
mat,zirial_ to ~i,eir 2-omz)c.-i -~icn . 111'n,~re ar~ 1~ fi-2-ure:~ anj 7 -3 bloca
referencez
Clard, 3/4

25791.
ii ~'S L) C 1 S't T 101.1 ?4- 1 2 i-~ i v fa kule ~`-c ske-) v s', oar 6c. suniversiteta im,
V ~ Lomc no sc~7a v si en. o" -'-:~Iys i c s~,.Os3c'w Sta-~e
-meni
Card 4/4

SPIVAK, G.V.; PRYMEOVA, I.A.; FETISOV, D.V.; KABANOV, A.N.; LAZAREVA, L.V.;
A. 1.
I-1irror-type electron microscope for studying surface structures.
Izv.AN SSSR.Ser.fiz. 25 no.6:683-690 je 161. (MIRA 14:6)
1. Fizicheskiy fakulftet Moskovskogo gosudargtvennogo universiteta
im. M.V.Lomonosova.
(Electron microscope)

-2,12-300
AUTFURS: Spivak,
TITLE: YWT-3 (LTIT-2)
ductors
24803
S/'U48/tl/025/006/005/010
B117/B212
G. V., Kushnir, F. F., ard Yurasova, V. Ye.
installation for etchIn& metals, serricon-
and dieluctrics through ion bombardment
F --,R ID I Ct, L: Akademiya nauk SSSR. Izvestiya. Seriya fizicheskaya, v. 25
no. 6, 1961, 707 - 712
T:.~AT: The present paper has been presented at the Ir d A1.1-Union Conference
or.. Electron Microscopy, held in Leningrad from October 24 to 29, 1?60. It
describes a new model of ,q. technical installation of type YvT-3 (UIT-3) for
etching metals, semicoi,dul-;tors, and dielectrics through ion bombardment.
The models UIT-1 and UIT-2 hELve been described in Refs. 1 and 2 (Spivak
G. V., Yurasova V. Ye., Kushnir F. F., Prilezhayeva I. N., Pribory i
ts?~-.hr,ika eksperim., 119 2, 10~, 0`157); Yurasova V. Ye., Spivak G. V.,
"UShnir F. izv. All SSSR, -er. Piz., 21, 744 (1959)). The UIT-3
installation is designed for the following investigations of the surface
structure of materials under different conditions: 1) heatirg of a
sputtered suecimen not above 12000 C; 2) cooling of the specimen during
Card 1/6

24803
,/04 b/(; I /0?15/006/~;O.~//U 10
YHT-3 (UIT-3) installation ... B117/B212
ctching with running water; 5) observation of the object surface during
sruttering or evaporation by using an ortical syotem with P- long focal
length; d) expansion or :ownro:~siori of the specimen duvin,7 icnic etching
cr evaporati-)r, 5) arplicu'lioll Of quartz or met,~,l foils, (reccs~iary for Url---
sol-.sequent eAe,!!.ron-oi.,tj.,,tl ztudy of the powdeT'ud surf~j(-e) rij~JA after iuftic
etching o!' the specimens. The UIT-3 installation COLSLSts Of the 1'0110-~-ing
rnain com-ronents: system for generating and measuring the vacuum, feeding
device, control console, device far expansion and compression of the
snecimens, me!:allo-ranlic microscone and a device to sioutter and heat the
suecimer.s. The vacuum system of' UT-3 is analoeous to tbat of UIT-1.
'N e electric system consists of tI,e following main comnorients: hiph-tersiun
rectifier for 10 Vv and 50 ma; beHting current transformer ( '( v, 250 a)
with a device to transfer the potential either to het or evaporate the
snecimen; pla'L.4ir~um-platinum-ri.odiiiir, or chromel-alumel thermo couples
with a millivoltmeter for measuring the temperature of the specia,.en; Gevice
for measui-in.-~r the vacuum af-.d turring on the pumps; interlocks which switch
off t~.e high tension whQn the doors of the installation are opened. Fig. 2
shows a dia~-,ram of the UIT-3 installation. The shaz)e of the specimens
to be sDuttered may be arbitra,,iy if no load is applied. The :aaximum size of a
Card 216

24803
IS/048J61/025/006/00/01.0
YOT-3 (UIT-3) installation... B117/B212
specimen bombar,,d with ions should not exceed 30 X 30'~ 6 mm, When the
0
specimen is hea ed up to 1200 C it should not be larger than 20 x 20 x 2 mm.,
2
During sputte-ring a specimen having a maximum cross section of 20 mm and a
length of 60 mm can be expanded o7r compresse"d under a load of 400 kg., Right'
after the ionic etching a quartz, metal, or carbon foil can beput on thq
V
specimen. The ionic etching may create impressions at the edges of the
monocrystals which have the symmetry of these edge*S:.' The oriented figures,
which are'obtained by cathode sputtering and corresponds to the symmetry 6f
the surface where they are located, may be used to determine roughly the It.
indices of simplest crystal edges. The application of ionic etching seems'
very promising to visualize dislocations, especially for heaied specimefid i
chemical etching cannot be used. There are 4 figures and 4 references, 3
Soviet-bloc and 1 non-Soviet-bloc.
ASSOCIATION: Fizicheskiy fakulltet Moskovskogo gos. universiteta im. M. V.
Lomonosova (Division of Physics of Moscow State University
imeni M. V. Lomonosov)
Card 3/6
30-

24804
S/048/61/025/006/004/010
J) B117/B212
fla=1
AUTAORS: Sedov, N. N., Spivak, G. V. and Isayeva, N. F.
TITLE: Electroa-optical measurement of electric and magnetic micro-
fields on surfaces
PERIODICAL: Akademiya nauk SSSR. Izvestiya. Seriya fizicheskaya, v. 25,
no. 6, 1961, 725-729
TEXT: The present paper has been presented at the 3rd All-Union Confer-
ence on Electron Microscopy, held in Leningrad from October 24 to 299 1960.
The author8 invesLigated expF--imentally the quantitative ratio between the
strength of the local microfield on the surface of an electron emitter and
the image contrast in the image plane. If such a correlation exists, it
is possible with an electron-optical emission system not only to observe
the electric and magnetic surface microfields but also tk measure their
strength. Using an additional secondary emission device with an 3)M-75
(EFIVI-75) emission microscope, the structure and distribution of the ther-
mionic emission of effective cathodes has been investigated. Due to such
studies it is possible to establish a correlation between the structure
Card 1/5

21,8o4
S/048/6~,/025/006/004/010
Electron-optical measurement of B117/B212
and emission of such a heat emitter (Ref. 6: Sbitnikova I. S.,
Dubinina Ye. M Spivak G. V., Fetisov D. V., Pribory i tekhnika. ekspexim.,
NQ 5, 76 (1959i,; Radiotekhnika i elektronika '. 5-,1077 (1958)). A com-
bination of photo- and thermionic emission leads to the same conclusions
in the same emission microscope (Ref,, 3: Spivak G,)V., Pryamkova 1. A.,
Sedov N. N., Izv. AN SSSR. Ser. fiz., 24, 640 (196 ). The microscope
used by the authors was similar to that described in Ref. 3, It in a com-
bined glass-metal device. The vacuum was measured to be (3-5)-lo-7 mm Hg
with an external glass casing and good degasification. The magnification
of the microscope varied from 50 to 500. A beam catcher not used in the
microscope described in Ref-a 3 was mounted in the center of the lumi-
nescent screen. The microscope was built in several variations with photo-
and secondary emission from the surface of the object. In the latter case,
the microscope had a socket with an electron gun instead of the lighting
device, which was used to bombard the object with about 100-ev electrons.
A heater allowed to observe the hot cathodes also during thermionic
emission. The possibility of measuring local magnetic fields was checked
by using a number of artificial specimens consisting of alternating mag-
netic and non-magnetic stripes (e.g. iron and copper). The front side of
Card 2/5

24804
S/046/61/025/006/004/01C
Electron-optical measurement of ... B117/B212
the specimen was polished. Magnetizing was done by an external magnetic
field. The distribution of the magnetic field across the specimen and the
current density on the screen were compared during focusing onto the area
of magnetic inhomogeneitLes. The image was shifted by means of Helmholtz
coils to measure the uurrent density across the individual sections of the
specimen. In some cases, the brightness of the luminescent screen was also
measured by employing an 034-19 (FEU-19) photomultiplier in a housing
impervious to light. The test results of the brightness of the screen and
the direct measurement of the current density on the screen agreed. The
magnetic field across the specimen was determined from the change of the
resistance of a thin bismuth wire (50 and 100tLdiameter). From the typical
curves obtained for the magnetic field across the surface of the specimen,
it was found that points with maximum values of the ma6netic field corre-
spond to a minimum current density on the screen and vice versa. The .
measurements showed that the relation j 11j2 = H2 /H1 (2) is actually ful-
filled with an accuracy of 5-101o. (The subscripts I and 2 denote the fields
and the current density of electrons across the individual sections of the
object). The accuracy depends on the exact performance of the exper iment
and especially on the even lighting of the specimen, With the given
Card 3/5

Electron-optical measurement of
-I,-14804
S/048/6,1/025/006/004/010
B11,0212
ae-uracy it is possible to measure small magnetic fields which are difficult
to measure by other methods. Measurements of magnetic fields were done with
artificial inhomogeneities of-wO.1 mm. At present, this method is applied to
measure natural magnetic microfields which can be found in a number of ob-
jects. Active heat emitters were also investigated. The current density
of individual sections of pressed cathodes was measured in the temperature
range from 6000 - 8001C. The lower temperature limit was determined by the
thermionic emission. The upper limit was determined by the bluiring of the
image caused by the space charge. Richardson lines were drawn by using the
temperature dependence of the current density. The work function deter-
mined from the inclination of the straight lines ranged from 1.9-3.1 ev.
Most of the emission spots had a work function close to the lower value.
If the spacing of the spots and the difference of the contact potentials
determined from the difference of the work function are known;then it is
possible to estimate the field potential of the spots for the object in
question. It is in the order of several kv/cm. Electron-optical emission
systems make it possible to determine inIagnetic and electric microfields on
the surface not only qualitatively but also quantitatively. The authors
thank the student E. Sh. Gasparyan for cooperation and A. I. Shallnikov for
Card 4/5

-24806 -
/,,4,/,-1/C2;/OO6/oO6/010
0 a,,ji Osadlko~
G V.
f, sp- Ar,
.0
f e SL J. L1 r
~5
V
-
PERIODICAL,,
5,-d A -M
The
TEXT! T am )w 2.4 2,;
n oy!.des
Ej-:w'tOn go
Thi5
e'-*,in;ka eksperim.
7 11 -d
Tflodell g
un d~! Jut
ry, on
It IL 0-
the ?hj;;; j: C:7 s-,.zrfaOO Of
F r -or,
M,
ele-tr~~,r 1, ~he, form of
ud ed
,ry s t a! s
nr 5
0,.:','T. L bike
r I ad -, 1 i k ',a!.
pcill'-

A 2,CIC
M

t

ri
7

Ti

-
~
t ,q
h
n
b;~ 7was-i by

-
e 9 h c
a-
i de
,
,
a a..d -a" e C-M rj
Ta- 7
A_rld 5 ~, T he
i-- r tz- P
_
a W-Ire 10CP w e r
r 0
grown
a fore-
b
y
Tr. e Var~;,j7., %7a- created
,-,e zube and fr-?ezi-rg

a,
t
r ,,
:7 anc.
w a a
g
there
t h e m J6
A

:
-C
h ~ - -:o:-,
-
w I ,
,
a
appea,,
C av d

24806
6/048' /61/025/0006/0006/010
study ... B117/3212
corresi-ond to the emission of the various thread-like crystals. The image
might change when the potential is raised: The images of single thread-
like crystals ~"of smaller diameter) disappear, while the images of others
appear, Tile crystals resist a lasting heating to red heat of the wire.
Due to the heating of the ci-ystals, the same emissicn, current aill be ob-
served with a potential increase. Some emission images disappear and the
screen luminescEs evenly. It is assumed that the ends arWrounded off
during heating and the images of some crystals overlap. Quite often one
car see images on the screen, which consist of four individual luminous
spots, Sometimes it can be observed how. the image is rotating by 900 around
~ts axis, This might take place under -the effect of ion bombardment of
residuai gases, Very seldom it was cbserved that a sudder. rotation took
olace when increasing the potential, with a subsequent disappearance of the
image.Iti.-3 possible that these phenomena are relaied to the occurrence of a
screw crystal emission and to a stripping of these crystals by tn'z! field.
Investigations of the thread-like crystals after the tes-. showed that their
ends become pointed due to ion bombardment. The ion bombardment is the main
cause for til'i instability of cold cathodes (Ref-5: Elinson M.I., Vasillyev
G,V.., Avtoelpktrornaya emissiya. Fizmatg--'z, M., 1958). A fairly stable
Card 3/4

2006
6/04A/61/025/006//006/010
_'lectron-microscopic study B1 17/012
current can be expected ICrom crystals having the form of straight needies
of a small diameter. Studies of the efiect of ion bombardment on the.-..
emissicn i~roperties of thread-like crystals showed that the emission curzent
increases by a multiple and reaches up to 3001Aa. The stability of the
emission current also increases. At.the same,time,more,four-leaf images
can be ob8erved on the screen. For a certain "point brush", the conditions
furnishing constant emission currents a_-u.chosen experimentally. Ther are
7 fiEures and 7 references: 5 Soviet-bloc and,2 non-Soviet-bloc.
ASSOCIATION: Fizicheskiy fakulltet Moskovskogo gos. universiteta im.
M.V. Lomonosava (Division of Physics of Moscow State University
imeni M.V. Lomonosov)
Card 4/4

21L807
S/046/0 1/025/006/007/010
-N B117/B212
o 0 (lo S~r, //,~ 31
AUTHO' RS - Lazareva, L.V. and Spivak, G.V.
TITLE: E.~,-tron-microscop,, observations of magnet-r; m-;c-o47j.e'ds
by -.mpressions
PERiODICAL: Akadeniiya nauk 33S,d., izvestija. Seriya ilzicheskaya, v. 215t
M). 6, 1 '41 , -14 2 -714 7
TEXT: Tnr-~ ~reserit
-p-,per has been presented at the 3:-1 Conference
"n El~c~rcri Yicroscopy, 'Qe..d in Leningrad from October 24 to 2'11. 19Q(-)~
TMe va uti eAlectrun-micruscupic irettiod which make;, it
J.'Js,jible -,o --,~-!~,te tile surface geometry of a ferr-cmagneti:! matur."al wiLh
its mj-c-rcmz18t.et.ic s;vucturze. The method is based or. an impression taken
of the itself but riot of the feFrom-agnetic. powder dusted or, the
ob-;e-~~. Thiq inelhod haz; "he following ad-~antages: The impre3slori
taKen dire,-.-~Iy f1rom th-~~ spe-cimen dependq neithei, on the magrietic nor oil
the geometri:, lata of tl-~e powder. Therefore, high magnifications -arid alst-.1
M,-:~:-e ~-f tile ma~--ietI*c-,r,,eoaetr--'c characteristics are possible.
Llagneti- :).-rid s'ructural zrGperties (micro-eome'ry) of the m-ler4al can
Card 114

24P~07
S/048/61/025/006/007/010
Electron-m_icrcLcopic observations 3117/B212
be studied simultaneously. The microgeometry of the specimens was
.rv~~_ltigated lby means of carbon or quartz impressions and a transmiGsion.
plp~
...-7tron microscorie. At the same time, the magnetic structure correspond-
in.6 to thq 3tate of the specimens (annealed, mechanically or electrolyt-
ically polished, stretched ,) was investigated by the powdar method. Textured
";,rrosilicon. (" Si) was cliosen for the tosts. Aboul, 10 different
specimens were stGdied. The results are characteristic and viell reproduc-
i ble ~It was f~)und that the crystallites are oriented nearly parallel to
the (1 10) plarie in 16-he rolling direction, and alorg the direction of
roLLine they are oriented -in the (,',OOJ direction, For ferrosillicon
this is "he direction of easiest magnetizat-on. Monocrystals were etched
out from single large crystallites by using nitric acid. The crystallo-
,.raphic orientation of the specimens was determined by X-ray photographs.
The syecimens -were chosen such that the surface investigated was located
in a rolling plane inclined at an angle of 2 - 3o to the crystallographic
plane (110). Tile specimens used were of various geometrical shapes (disks,
rectangies and polyjguns) with suriaces ranging from 0.5 cm2 to several
centimeters, and thicknesses from 0.3 - 1.5 mm. The monocrystal was
Card 2/4

24807
S/048/6.1/025/006/007/010
E-'ec tron-ml~:rcscopic ob Eerjations B117/B212
polLshed mechanically. The pcwder patterns in the optical microscope are
typ.--~;al of' su~.,h F,~pecimen3 for the (110) plane if stre5ses are present. The
St-ucture depsnds on the grinding direction and does not seem
repr,~.-,ent !,;ie structure of' the internal domains. It iz3 known that tile
K,urdaries of the mosaic zigzag, A value of' 1060 was obtained for stable
-.~gzag anglec z,f ferrosilicon (Ref.11: Chikazumi S., Suzuki K., J. Phys.
Soc. dapan, 1.2. 523 (19~5); "Magnitnaya struktura ferromagnet-ikov" str. 204.
Pad red. S..V. Vors,-vskog~,., IL. 1959), This angle will 'cr- smaller than 1060
it str-nj~ StT~~-.Stz- are p.oe2ent in the crystal. oil specimens
wLth vary-.-n~ strt,53-vs showed values 'cetween 8()'-' v~ad 11,1U, w,-,-;ch-a-grei with
the For studies wit-hout str-~ss,ls the specimens were
polished electrolyt'cally;afte~r ,hat they were annealed ir vacuo at 10000C
for 3 hr and -hen. c-d-Aed slowly. The powder patterns which represent the
ma6netic stz-u-~tu-e of an annealed specimen, are para--Iel ctraight lines. I
They co~~e- the wh-,~.~e s~irfane and. are ,-,~,.aracteriistic r-f the (110
) plane of
.
fery-c'silicor., It carl be assumed that the I.ine relief is caused by cold

ro,'1J,.ng uf the uititerl.all, and that
.1 the character of the linear magnetic
domains -)f annea~d 6pec'imens is closely connected with 'the character of tHe
micro6tri.;?~.ti,re. investigations have shown that stror.6 internal streises
C 314

2W907
0/048/61/Q25/OU6/007/010
El r-c tron-m i~; obstirv at i ons
caused by thermal treatment will chan6e thte magnetic structure of the
spec imens. In ~,he pr,,~sent paper, it hao been found that there Is a certain
relation betwe~~i. the microgeomptry at ti-Le surface of fer-rosilicon specimens.
ana the characto.r of their magnetic otru.-.~tuve. The stre*ses cau6ed by
me(.hanica.' cr th,~?rmul treatment seeir. to cause a change of the microgeometry
-it the surface -,f the specimen, This can b~. explained by the anisotropy
of the stricA2.~)n prop~-,rtjes. The totu~ity of a."I.chariges, appr~a,--_rifg in the
specimer. due t,.:~ aniootropy of -the mechanicai and magnetic proper..Jeo wiil
bring abQut the xagnetic structure cliaracterizing the staTe of the mat.?rrial.
Ya..S. Shur, VA. Abel's, L.V., Kirensk-i'j, If..V- Veter are ment-loned. There
are 8 figures arid 15 references-. 9 Soviet-bloc and 6 non-Soviet-bloc.
ASSOCIATIONt F.fz-.cheskiy fakulltet Moskovskcgo gos.universiteta im. I.V.
Lomonosova (Divisior. o--:' PIK,,sics of Moscow State University
imeni ."'L.V. Lomonosriv)
Card 4/4

S/04 61/025/012/007/022
B116X138
AUTHORS: Spivak, G. V., Kirenskiy, L. V., Ivanov, R. D., and Sedov,
TITLE: Development of mirror-type electron microscopy of magnetic
microfields
PERIODICAL: Akademiya nauk SSSR. Izvestiya- Seriya fizicheskaya, v. 25,
no. 12, 1961, 1465 - 1469
TEXT: The authors present electron-optical photomicrographs of domain
structures of various ferromagnetic materials and compare them with powder
patterns. The distribution of the local magnetic fields scattered by the
specimen is obtained from the contrast. G. V. Spivak, I. N. Prilezhayeva,
and V. K. Azovtsev (Dokl. AN SSSR, 105, 965 (1955)) were the first to re-
commend the el&ctron mirror for photographing magnetic microfields. They
carried out their experiments at the laboratoriya elektronnoy optiki MGU
(Electron Optics Laboratory of MGU). The electron mirror has the following
advantages over the methods of secondary electron emission or photoeffect:
high field sensitivity (the illuminating electron beam is stop-ped by an
Card

S/04 61/025/012/007/022
Development of mirror-type ... B116YB138
electric field in front of the specimen, i. e. "probing" of the spatial
field structure; high contrast, due to the forwards and backwards motion of
the electron; and the possibility of examining the magnetic structure at
different distances from the source of the microfield. The optical system
can be traversed by both slow and fast electrons% A 50-kv voltage focuses
the reflected electrons and enhances the resolving power of the instrument.
1)omqin structure electron-mirror pictures of a PbO(Fe2O 3)6 crystal magnifi-
cation: 400, 800. and 1500), cobalt (400 and 800), and a cobalt film
(-1000 a, 400 times), were in good agreement with ones produced by the
powder method (400). The local magnetic fields were determined from the
contrast. Calculations have shown that the contrast depends on the product
Hz (z = extent of the H-field), The magnetic field decreases almost ex-
ponentially. Results are shown in Fig.. 6,. Knally it is noted that magne-
tic fields can be examined under an electron mirror microscoDe and that their
thE!ir strength can be measured at different distances from the specimen,
The magnification here achieved (about 2000) can be further increased.
There are 6 figures and 7 Soviet refere.-~ces.
Card 214-

8/04,3/61/025/012/007/022.
Development of mirror-typed.a. B116/B138
ASSOCIATION: Fizichnskiy fakulltet Moskovskogo gou. universiteta im. M. V.,
Lomonotiova (Division of Physics of Moscow State University
imeni M. Vi Lomonoeov), Institut fiziki Sibirakogo otdeleniya'
Alcademii nauk 3SSR (Institute of Physics of the Siberian
Department of the Academy of Bdiences USSR)
Fig. 6. (a) Field above the artificial specimeng measured with a bismuth
Z/zo
micrometer at different magnetic biasing currents H - H e W mirrorl~
0
calibration curvel (c) scattering field above the hexagonal plane of the i
PbO(Fe 0 crystals z - 0.02 mm; (d) scattering field'above the hexagonal
2 3)6 0
axis which is nearly parallel to the cobalt face, zo = 0-05 mm. Legendt
7, 15 a con5tantf B I ahd B2 are the various degrees of brightness on the
acreen&
Card 3/~

31608
S/048J61/025/012/022/022
Ile B125/B112
AUTHORS: Ivanov, R. D., Spivak, G. V., and Kislova, G. K.
TITLE; The properties of ferromagnetic films produced by cathode
sputtering
PERIODICAL: Akademiya nauk SSSR. Izvestiya. Seriya fizicheakaya, v. 25,
no. 12, 1961 , 1524-1525
TEXT: A method worked out by G. V. Spivak, I. G. Sirotenko, and R. D.
Ivanov (Izv. AN SSSR. Ser. fiz., 31, 581 (1961) for the production of
one-component and multicomponent ferromagnetic films of high quality by
cathode sputtering was improved. The magnetization curves and the
hysteresis loops of such films were studied and the most important loop
parameters were determined by a magneto-optic method, suggested by 0. S.
Krinchik (Fizika tverdogo tela, 2, no. 6 (1j60)) which uses the equatorial
Kerr effect. Polarized light i~_cident on the surface of the film through
two windows in the discharge tube, was transmitted-to a photoelectric cell
by reflexion. In case of static operation, the hysteresis loop was
recorded by means of a bridge circuit with two selenium photoelectric
Card 1/2

316G8
S/048/61/025/012/022/022
The properties of ferromagnetic ... B125/B112
cells of the type C_1-10 (SF-10) and with a galvanometer M21/2 (X21/2)
without exposing the film to the atmosphere. During the formation of the
ferromagnetic films their properties were checked constantly. All the
films were sputteredtD hot surfaces under approximately equal conditions
(amperage of the discharge current 0-5-1 a, potential of the specimen
with respect to the cathode 1.8-2.2 kv, krypton pressure in the tube
(4-2)-io-3 mm Hg, current density in the specimen 1-3 ma cm-2, generating
field -44.2 ce, period of sputtering 4 2-5 minutes) and their magnetiza-
tion was reversed in direction of weak magnetization. The film was then
exposed to air and the change in the coercive force was studied. The
coercive force which is rather small prior to oxidation increased
notably at the beginning and more reluctantly in the further course of
time. An analogous behavior of He can be observed also in other
ferromagnetic films. Adequate measures should be taken to protect the
film exposed to the atmosphere and the essential parts of the receiver
should be made so as to permit recording of the whole magnetization
process by oscilloscopes. There are 3 figures and 2 Soviet references.
ASSOCIATION: Fizicheskiy fakulltet Moskovskogo gos. universiteta im. M.
V. Lomonosova (Physics Department of the Moscow State
Card 2/2 University imeni M. V. Lomonosov)

23734
S/0~,7/61/031/006/016/019
9~ 4:3 ro 0 7 11 C4;~ /.3 q Ins-, B 1 /B' 2 Ol
- -ak G. V., Sirotenko, I. G.~ a-rid I-ranov, R. D.
AUTH; .3~ -Sp-L
TITLE-, M, c r -- ma6r, e. t, c- atruc.tura of films obtain-ed by cathode
spui.tel-ing
PERIODICAL: Zb.-.jLrnal tekhn-i.cheskoy fiziki, V. 311, no. 6, 1961, 754 - 756
TEXT~ A des,-ripticn J-s gi;rea of the. applicatiori of intense cathode
spu-,tering f*o7 the ptjrpcls-l~ obtaining different ferromagnetic films.
Compared with existj.ng me-thods, this one is shown to display a number of
ad-rantages. The doma-,.r, s-~r-uortvr-e and its ohanges have been observed on
ferromagne~!.~ -,tc~balt f1*Jms,, molybdenum-permalloy fillms (119M, 17Fe 4mo),.,
and sili~,-~n- iron f-i-ims (3-~3',/o S-0 wi-~h the aid :if pcwder pattarns. The
characteriel-l'as of the change of the domain structure with a change of
thickness have been es,tablishad on molybdenum-permalloy films. Ferromagne-
tic film3 are usually ---.t'ained 1,y vacuum evapoxation or by electrodeposition.
Such meth--,ds ` h,:we-ar~ display a number of essential drawbacks- 1) The
chemical compo',sitio n of tbe fi.1m differs from that of the initial material;
2) difficalf'.1es arise Ln the preparation of homogeneous films of a desired
Card 1/4

SIO 57/6-!/031/006/018/019
Mi.(,, r.,)magne t i.c s truc ture cf films . . . B 1 6/1320
thi cknps~7.. Air ar*~emp-r has been made by G. S.idda.'.'-' (Ref. !; Proc. Inst.
fq"~B.' and Q. Wehr)pr (Ref. 2., Adv, in Electronics a.
Electron Phyq.~ '9-5) Lo obta.tn films of different. metals by
CELtbode sputlering. A paper by L. Reimer (Ref, 3~ "Os. f'. Phys..~ 149, 425,
1957.). descr-0-jes at,~ewptrj t,,- prepare nick#~I. films by cathode sputtering.
These expe:.imej1t=_,. were condncted with relative~'y weak discharge
currents and in a glow d.ischarge; in addition relaturely high gas pre:3s...
ures (of 0.1 mm Hg and more ) ware applied. In such a case,, a long -time is
needed to obtaln films of a desired thickness. which, however, causes the
film to be polluted and oxidized.. The authors of the present paper have
carri.ed out an intense cathode sputtering in the plasma of a low-pressure
I
d-ischaTge (-',-'0 _) 10 -3 mm Hg). The mean free path was in this case lar ger
than the dist4rice between the bombarded target and the base on which the
film was foimed,, The sputtered specimens were introduced into the plasma
as the third electrode with a negative potential of the order of I kv with
respect to the caT;node.- A ho" cathode was used to raise the density of the
discharge current. The discharge current was of the order of some amperes,
and the currea:-. appl-;ed to the sputsered specimen was of the order of some
Card 2/4

23734
S/057/61/031/006/018/019
Micromagnetic structure of films... B116/B201
milliamperes. The glass bases onto which the films were sputtered, were
placed at a distance of 2 - 3 cm from the target. The setup used was so
constructed as to allow several films to be submitted to sputtering simul-
taneously, without having to interrupt the sputtering process. The disk-
shaped sputtered specimens had an area of I cm , which ensured a sufficient
deposition of the sputtered material onto the base. The film thickness
varied linearly with time. Therefore, the thickness could be easily regu-
lated by changing the sputtering time; thus, films of any desired thick-
ness were obtained. The film thickness was measured with an WA- ~(MII - 5)
microinterferometer. The glass bases were heated up to 100 - 125 C. The
films formed in a magnetic film of the order of 175 - 200 oersteds, which
was parallel to the plane of the base. Quantitative chemical and spectro-
scopic analyses of films obtained by cathode sputtering and with different
modes of operation showed that -their composition did not differ from the
initial components in the sputtered materiils. The domain structure was
observed on the films with the aid of powder patterns. When submitting
molybdenum-permalloy films to sputtering, the specimen potential amounted to
800 v, the discharge current was 0.75 a, the density of the current to the
specimen was 1.6 ma/cm, and -the pressure was 9.10 mm Hg. The domain walls
Card 3/4

23734
S/057/61/031/006/018/019
Micromagnetic structure of films ... B116/B201
changed in appearance with an increase of the film thickness. The * silic-on-
iron films, on which wedge-shaped powder patterns were established, were
submitted to sputtering at a specimen potential of 700 v. a current density
of 6 ma/cm 2~ a disoharge current of 1 a. and a pressure of 8-10-3 mm. Hg.
The method described here for obtaining ferromagnetic films by intense
cathode sputtering is characterized by the following circumstances: 1) It is
possible to obtain high-quality films of different thicknesses under easily
controllable conditions; 2) cathode sputtering may be applied with materials
of any melting temperatures; 3) uniform sputtering and pure films are
ensured; 4) most important, the films obtained display only small deviations
from the composiltion of the sputtered ferromagnetic substances. [Abstracter's
note: Essentially complete translationq There are 2 figures and 3 non-
Soviet-bloc references.
ASSOCIATION: Moskovskiy gosudarstvennyy universitet im. M. V. Lomonosova
Fizicheskiy fakulltet (Moscow State University imeni M. V.
Lomonosov, Division of Physics)
SUBMITTED: September 16, 1960
Card 4/4

SPIVAX, G,V.; KROKHINA, A.I.; TEREMETSKAYA, A.G.; TEWIOVSKAYA, M.V.
Studying the microstructure of ore minerals by ion bombardment.
Zap.Vses.min.ob-va 0,0 no.6:695-697 '61. (IIIIIA 15:2)
1. Fizicheskiy fakul'tet Moskovskogo gosudarstvennogo universiteta.
(MineraloQr)

S/048/62/026/011/003/021
B125/B102
AWHORS: Sedov, N. N., Spivak, G. V., and Ivanov, H. D.
TITLE: Electron-optical study of a p-n junction in germanium and
silicon
PERIODICAL: Akademiya nauk SSSR.' Izvestiya. Seriya fizicheakaya,
v. 26, no. 11, 1962, 1332-1334-
TEXT: The authors describe an electron-microscopic method of examining a
p-n junction with the help of ion-induced electron emission. This method
offers the following advantages: (1) The surface of the specimen and
the junction can be examined simultaneously; (2) the overall length of the
junction is visible; (3) the image is not darkened by any auxiliary grid;
(4) the method is likely to be suitable also for greater enlargements;
(5) quantitative measurement of the potential distribution in the p-n
'junction is very simple. The secondary electrons are knocked out of the
specimen by positive ions of 3-4 kev and then are accelerated and focused
with the immersion objective of a high-quality emission microscope with
improved metal mirror. Such secondary emission microscopes are
Card 1/3

S/048/62/026/01-1/003. /021
Electron-optical study of a B125/B102
particularly suitable for examining semiconductors with surface junctions
that are not heated. The photographs are taken inside the vacuum chamber.
The disturbances of the accelerating field that arise over the p-n junction
bend the electron trajectories. The electrons deflected by these
disturbances are kept away from the screen of the microscope by an
aperture stop. When a voltage of 5-10 v is applied in the back direction,
the image of the p-n junction assumes the shape of a dark band which need
not be straight and which broadens as voltage increases. The range of
the potential in the p-n junction can be determined from a comparison
between the secondary emission image and the electron mirror. The
construction of a mirror electron microscope was described by G. V. Spivak
et al. (Izv. AN SSSR, Ser. fiz., 25, 6a3 (1961)). The shape of the
Dotential barrier on the p-n junction was determined by using the sharp
contrast between the reflected image of the surface and the boundary of the
"snot" of secondary emission. The method described here permits
measurements at sufficiently small intervals. Its accuracy is dependent:
upon the properties of the electron mirror which is more sensitive to
inhomogeneities, such as p-n junctions, than is an electron microscope with
ion-induced electfon emission because the impurities change the work
Vard 2/3

S/04 62/026/011/003/021
Electron-optical atudy of a Bl 25YB1 02
function. There are 10 figures.
ASSOCIATION: Fizicheskiy fakulltet Moskovskogo gos. universiteta im.
14. V. Lomonosova (Physics Division of the Moscow State
University imeni M. V. Lomonosov)
Card 3/3

S/04 62/026/011/004/021
B125 102
AUTHORS: Spivak, G. V.1-Saparin, G. V., and Pereverzevs N. A.
TITLE. The potential distribution found in a p-n junction by means
of an electron-optical raster system
PERIODICAL: Akademiya nauk SSSR. Izvestiya. Seriya fizicheskaya,
v. 26, no. 11, 1962, 1339-1342
TEXT: The authors discuss the possibility of visualizing the junction and
of quantitatively measuring the range of the potential in p-n junctionsof
germanium and silicon single crystals directlyand quickly, using an elec-
tron beam that scans over the surface. The method is based on the,
following assumptions: (1) The radius of the 'scanning beam ha's to be
smaller than the width of the p-n junction; (2) the potential drop iir the
junction must be greater than the mean energy of the secondary electrons.
.The accuracy of the method in weak fields can be improved by reducing the
electron energy and when the radius of the electron probe is reduced, the
method can be applied to measuring potentials of thin junctions. The
width of the junction can also be determined by varying the blocking
Card 1/5

S/048/62/026/011/004/021
The potential distribution ... B125/BI02
voltage. The potential distribution of a p-n junction is determined with
t..qe integrating circuit (12) and the oscilloscope (13) (Fig. 1). If the
blocking voltage is given, the width of the junction determined by the
electron-optical method is 25-305/o greater than that measured with a micro-
manipulator. The method described here furnishes data on the dependence
of the electrical structure of a p-n junction on various factors. The
device displays'600 scanning lines and supplies 50 frames per sec. There
are 7 figures.
ASSOCIATION: Fizicheskiy fakulltet Moskovskogo gos. universiteta im.
M. V. Lomonosova (Physics Division of the Moscow State
University imeni M. V. Lomonosov)
Fig. 1. Block diagram of the electron-optical raster system.
Legend: (1) electron gun; (2) anode cylinder; (3)-(4) magnetic lenses;
(5) deflecting coils; (6) object; (7) collector; (8) amplifier; (9) the
deflecting coils in the circuit of the electron probe are connected in
serie to the kin,~scope; (11) kinescope.
Card

5/18IJ63/005/002/P241051-
B1041BI02
AUTHORS: Predvodit'419- A
vi A4, Ab Ak.-'Go V.i Kof
-Ye,,'# and Kushnir# F&I,
Yurasovaj. V.
TITLE: Study o*f non-idecoreA 'dislocations In sin Ingle arysf,~Ll
br ion boAardme'nt':
PERIODICAL: Fizika tver 'ielap-,vi- 5t 0 a
d og*d' n 2 1963 9` ~542-545
TEXT: This ap 'is 'a.imed ,to,,'pro ve -po'sei-bility, of' i9vi
p er detecting, 4in
dislocations',.by.ion.bombardeent::df.single-orystal- f d-66~ Cilindkidal."..
zinc single.'arystal 5 mai"In diaim"etert'50 Mig high.),'"ie split:'along -
the (Odol) plane'at:~ihitrbgen-l'tefii~'ar'aturo, and the faoes were,, boubarde
with ions in flowing neon gas.' Thin pieces of specimens that - had,'bein'~
n'.both (0061)'~lane6 a a ed-the-_a~aae ich iitierns.
bombarded with ions P, -4 w 8
ni: Of -;any-, .one surfa*o* isso icin pro udie", -
t
on both sides.--Ropqated.etchi d,
no new etch patterns.-but"iiiteniifiiis,:thd6e existing'. The' 1tej
:resu
on bombardment'are cons ht i ";'Th~
chemical-etching and f rom, I iste a .oat.
favorable experimental conditionc are: neon* presauro -between 107.2,and
~Card 1/2

-T IVAK, G.V.; YURASOVA, V.Ye.; KUSIMIR, F.F.
UIT-r apparatus for fast etching of metals, semiconductors, and
dielectrics by ionic bombardment. Izv. AN SSSR. Ser. fiz. 27
no.9:1188-1192 S 163. (MIRA 16:9)
1. Fizicheskiy fakulltet Moskovskogo gosudarstvennogo universiteta.
im. Lomonosova.
(Electronic apparatus and appliances) (Ion beams)

SPIVAK, G.V.; IVANOV, R.D.; PAVLYUCHENKO, O.P.; SEDOV, N.N.
Formation of contrast in mirror-type, emission, and scanning
electron-optical systems. Izv. AN SSSR. Ser. fiz. 27 no.9:
1139-1146 S 163. (MIRA 16:9)
1. Fizicheskiy fakulltet Moskovskogo gosudarstvennogo universiteta
im. Lomonosova.
(Electron microscope)

SEDOV, N.N.; SPIVAK, G.V.,; DYUKOV, V.G.
Use of an emission electron microscope in studying semiconductors
and dielectrics. Izv. AN SSSR. Ser. fiz. 27 no.9:1173-1178 S
163. (AURA 16:9)
1. Fizicheskiy fakulltet Moskovskogo gosudarstvennogo universiteta.
im. M.V.Lomonosova.
(Electron microscopy)

SEDOV, N.N.; SPIVAK, G.V.; DYUKOV, V.G.
Use of an emission electron microscope in measuring the potential
distribution in a p-n junction. Izv. AN SSSR. Ser. fiz. 27 no.9:
1179-1183 S 163. (MIRA 16:9)
1. Fizicheskiy- fakulltet Moskovskogo gosudarwtvennogo universiteta
im. Lomonosova.
(Electron microscopy) (Junction transistors)

SPIVAK, G.V.; LUKIYANCV, A.Ye.; TOSHEV, S.D.; KOPTSIK, V.A.
Observation of the domain structure of triglyalne sulfate by
means of an electron mirror. Izv. AN SSSR. Ser. fiz. 27
no.9:1199-1202 S 163. (NIRA 16:9)
1. Fizicheskiy fakulltet Moskovskogo, gosudarstvennogo universiteta
im.M.V.Lomonosova.
(Glycine) (Domain structure)
(Electronic apparatus and appliances)

q.-),:6- 6,
iTJP(C)__F~-'r,4 - ~AT/JD
.47FT (.!','ASD/ ESD
ACCESSION IM: A?3007823 S/0048/63/027/009/1203/1206
AUT11OR: Spivak, G.V.; Ivanov, R.D.
TITLE: A mirror I tr microscope and its use$ for quantitative investigation
of semiconductor Report 113~urt_i_ATi-Uuion Conference on Electron Microscopy haZ
hc17Cin -Simiy* 12-1_~ March 1963/
SOURCE: AN SSSR, Izv.Ser.f.izicheskaya, v.27, no.9, 1963, 1203-1206
TOPIC TAGS: p-n junction , semiconductor , electron microscopy
ABSTILACT: The paper is a general report on investigations of the width of p-n
junctions and the potential distribution across them by means of a mirror elec-
tron microscope. These investigations are part of comprehensive studies of p-n
junctions on semiconductors by different techniques. The mirror microscope has
been described elsewhere (G.V.Spivak and others, Izv,AN SSSR,Ser,fiz.,25, GS3,
1931). For -111v Dresent work therc was bult a special specimen holder with pro-
ir~sion for applying a blocking voltage to the p-n junction, heating the specimen
and ireasuring t:ie temperature by means of a thermocouple (see Enclosure) for khH
.=rpasas one c'_ ic our-noses was to investigate the effect of temperature. The
Card

i, igg,56--63
ACCESSION NR: AP3007825
junction in mirror microscopes is visualized by displacement of the boundary of
secondary emission across the junction incident to variation of the potential ap-
plied to the semiconductor specimen. Actually the electric field emergingto the
surfacc of the junction usually combines with the field due to a poorly conducting~
film that forms on the surface, so that the observed pattern is a superposition of;
the two fields, which are characterized by different dependences on the teihpera~
ture of -the specimen (hence the interest in heating thespecimon). Six micrographs
of germaniun surfaces are reproduced, as well as a family of curves-charactdrizing
the variation of the junction width with applied voltage at 30, 60 and 1200C'% Some
of the microph9tographs illustrate the results of heating. Orig.art.has: 6 figure&
ASSOCIATION: Fizicheskiy fakultet Moskovskogo gos.universiteta im.M.V.Lomonosova
(Physics Department, Moscow State University)
SUBMITTED- 00 DATE hCP: 070ct63 ENCL: 01
SUB CODE: P11, SD NO Mr SOV: 006 OMR- 000
Card 2/6

SPIVAK, G.V.; IVANOV, R.D.; FAVLYUGHSNKO, O.P.; SEDOV, N.N.; SHVETS, V.F.
Visualization of a magnetic sound-recording field by means of
an electron mirror. Jzv. AN SSSR. Ser. fiz. 27 no.9:1210-1218
S 163. (MIRA 16:9)
1. Fizicheskiy fakulltet Moskovskogo 4osudarstvennogo universiteta
im. M.V.Lomonosova.
(Electron optics) (Magnetic fields)

KROKHINA, A.I.; SPIVAK, G.V.; RESIETNIKOV, A.M.; ZHELNINSKAYA, R.I.
Electron-microscopic study of the structure of ceramic materials
revealed by ionic etching. Izv. AN SSSR. Ser. fiz. 27 no.9-.
1224-1-227 S 163. (KRA 16i9)
(Electron microscopy) (Ceramic materials-Testing)

1 1 1
"Di(--, Struktur des 1, -retfe-des irmei+,alb der Doman-enwand, mit Hi-Ife des
Spiegelek,tronenuii-k-fos--r~c,as sicii-.tbar gerzmc~t."
report submitted to 3rd European Regional Conf, Electron Microscopy, Prague,
26 Al,'E'-3 Sei) 614.

S F --i- -~,; G. V. ; G. V. 3 - Y~.KOV 1. V~. -".
"Der Kontrast des R-ildes dies P-n -Cberganges in derr Rastelektronerimikrosk-oD."
report submitted to 3rd European Regional CoInf, Electron ILIcroscopy, Prague,
26 A4-3 6h.

DYIJK(N. V. ~;PIV4~~, (,. V.1; `S"~,J,CIV7 H. N.; YEVI.,tc)KIIA)V~ V. "I".
"Ubur die Beobac lit Ling der dynwrdschen Vorgange in ier p-n TYberganger, m,"
Hii-fe vor. ftem ETni-ss4-.onelel~~'uror~erLaikrosko-T)."
port submitted for '-rd European Regional- Conf, Electron kicroscGpy.,
re - -
Frague, 2b Aug-3 Sep 6D 4.

E i IVAKI) V. LIJIK7ii'diC)V~ It.
"lYber das quantitative Studium der Emitter mittels eines Ho-ch-vak-Lium-
Emissionsmikroskopes."
report sWomitted for 3rd European Regional Conf, F~Iectron Microscopy, Prague,
26 Aug-3 Se-n 64.

PYTIYEVA, M.B.; SPIVAK, G.V.; DUBIIJINA, Ye.M.
Hig~-Vacuum ion ScUrce. Zhur. tekh. fiz. 39 no.1:142-145 Ja '64.
(MIRA 17: 1)
1. Moskovskiy gosudar3tvennyy universitat imeni Lomenosovat fiziches-
kiy fakulltet.