Document Type: 
Document Number (FOIA) /ESDN (CREST): 
Release Decision: 
Original Classification: 
Document Page Count: 
Document Creation Date: 
November 2, 2016
Document Release Date: 
August 31, 2001
Sequence Number: 
Case Number: 
Publication Date: 
December 31, 1967
Content Type: 
PDF icon CIA-RDP86-00513R001654310003-8.pdf3.03 MB
Surface Properties of Semi-conductors SOV/139-58-4-13./30 of AlSb, InSb and Ge. The results are silmmarised thus: litching eliminates the broken-up fine-grain surface layer and thereby reduces the concentration of surf acceptors. The surface properties of type AKI'V compounds show considerable analogy with those of germ 'um. A number of phenomena related to. properties thin, polycrystalline layers of the compounds AIIIB changes of the sign of the conductivity in the case of refining the n-type of material, '"'- the influence of the transverse electrostatic field,and the change in the output work can be explained by the presence of surface acceptor levels. There are 5 figures, 1 table and 11 references,.e of which are Soviet, 3 English. ASSOCIATION: Sibirskiy fiziko-tekhnicheskiy institut pri Tomskom. gosuniversitete imeni V.V.Kuybysheva (Siberian Physico- engineering Institute at Tomsk State Uniersity) SUBMITTED: February 24, 1958 Card:2/2 SYNOFOV, V.F., kand. fiz.-mat. nauk.; LOBASUVSKIY, L.V., In7b. "Slide contact" In the Great Sov,'.et Encyclopedia. Veut.el*troprom. 29 no-10:7?-74 0 158. (MRA 11:11) (Electric contactorB) (Encyclopedias and dictionarien) 2 AUTHOR: Synorov, V, F. 2o-3-18/59 TITLE: The Influence of the Surface on the Si;rn of the Conduction U in AlSb and InSb (Vliyaniye poverkhnosti na znak provodimosti AlSb i InSb) PERIODICAL: Doklady AN SSSR, 1958, Vol. 118, Nr 3, PP- 483-484 (USSR) ABSTRACT: First reference is made to previous works, dealing with the same subject. This work investigates the dependence of the sign of the conduction of AlSb and InSb on the dimensions of the grain. As original material AlSb- and GaSb-preparations of the n-type were used, which were obtained by the method of alloying. The author produced layers of AlSb, In Sb, and GaSb with hole conductivity by vaporisation of the named finished compounds in vacuo. The preparations obtained by the method of alloying were crushed mechanically to a certain degree of smallness. The ave:,!age dimensions of the jrain were controlled by a microscope. In the various states of the grinding the sign of the thermoelectromotive force was ascertained by the compensation method. For this purpose Card 1/3 the powder was fixed between two copper or nickel-plated The Influence of the Surface on the Sign of the Conduction 20-3-18/59 In AlSb and InSb electrodes, bstween which a constant temperature difference of Go to loo was kept. In case of these measurements the total thermoelectromotive force, which is determined by the avera-e dimensions of the grain in the powder, is obtained. In case of further refinement of the grain the thermo- electromotive force decreases. At grain dimensions of 2 to 3 V it became very low; on occasion of further refinement of the grain it changed its si&n and increased again. A storage of the powder over long periods and a heating in vacuo up to 200 to 3000C did not change the sign of the charge. The thermoelectromotive force was measured in that case directly in a vacuum device. For the comparison measurements were made also at pressed test pieces. The electromotive force of these pressed test pieces was some- what higher because of the bett,~r contact between the grains. To control the method and for a comparison all the measurements were performed also with a preparation of n- -germanium. The results obtained here show the following: The development of the surface of the test pieces of the AlSb and of the InSb leads to the appearance of a p-con- Card 2/3 ductioji. This also corresponds with the works by the author 29760 3/194/61/000/006/037/077 D201/D302 -AU THOR _~8~o r o v ~,V -~F TITLE: The effect of the surface condition on the electric properties of AIIIBV compounds P C., I ~ 10 1) 1 Cd,,-. Referativnyy zhurnal. Avtomatika i radioclektronika, no. 6, 1961, 6, abstract 6 D31 (V sb, Vopr. metal- lurgii i fiz, poluprovodnikov, M., iuN SSSR, 1959, 120-126) TIMT: The effect has been investigated of dimensions of cryzstal ,,rrair, en the type of conductivity oE specimens together with the effect o.-L" a transverse el- field an the electric conductivity as de-i3ending on the thickness of A13b, InSb and Ge monocrystals, The dependence is criven of the thermal emf o-.Jff the powder made from the above compou-ads on the average grain dimensions. It is shown 'that the smaller the grains, the smaller the thermal emf; its sign changes Maen the dimensions reach 1-2 microns. Uith a further de- Card 1/2 2076i-, S/194/61/000/006/037/077 The ef-fect of the surface conditiou...' D20-',"D302 crcase of grain dime-nsion, the eraf inercases in magmitude. 'fhe evidence obtained, confirmed by the requLt.; o.i_* ule-asurements uith conipressc-_,d specimens, shows the preponderance of surface ov--r vol- ume properties of AlSb and InSb i-rith strong surface development. Tile changes in the resistance under the influence of external fields have been inv~,stigated. The relative change in tli(--. resist- a-ace was about 10-3. This shOWS a strong screening of the c.-Iternal field by th_- surface charge due to the cxisting surface lew-As. The strongest screening fron the external field was observed in zdir, which is explai-ned by the ionization of adsorbed atoras. The in- crease in the specimen thickness leads to a more pronou-Liced effect Of the field owing to a negl* ible pe-netration of it into the semi- Conductor., 20 -references. ?Abstracter's note; Complete trans- lation,_7 Card 2/2 81347 S/1 81/60/002/03/01/028 oo F006/tO17 AUTHORS: Presnov, V. A., Synorovq V'. Fo - - ----------------- TITLE: Investigation of the Surface Electrical Conductivity of Germanium Single Crystals k PERIODICAL: Fizika tverdogo tela, 1960, Vol. 2, No. 3, PP. 381-387 TEXT: The authors investigated the influences exercised by various kinds of processing and coating on the conductivity of samples of germanium single crystals. Here, they report on the theory, experiments, and results obtained from the investigations of these effects. In the first chapter of this paper, some conceptions on the surface state of a semiconductor are discussed. The nature of the electron surface states in a semi- conductor may vary: 1) Tamm levels (I. Ye. Tamm, Ref. 6), which always occur in a bounded crystal; 2) levels occurring due to increased concentration of impurity ions in the layer near the surface; and 3) levels produced by atoms which are bound to the semiconductor atoms by covalent forces. Further, the conclusions drawn on the surface states by Card 1/4 81347 Investigation of the Surface Electrical 9/181/60/002/03/01/028 Conductivity of Germanium Single Crystals Buu6 B017 R.- L..,Xyuller et al. from results of etc',ing experiments are discussed, and two cases of influence exercised by the surrounding medium on the surface are discussed. The authors themselves conducted their investi- gations in n-type and p-type germanium single crystals: To increase the surface effects, very thin samples were used (0-15 - 0.2 mm). These platelets had a size of 5 - 3 mm with two contacts each. nn alloy consisting of tin with 5-10% antimony served as "solder". Before the measurement was made, the samples were etched for 5 - 10 minutes in boiling hydrogen peroxide and then washed in distilled water. The further preparation for the measurement is described. The current passing through the samples was of the order of some milliamperes. Resistance was measured by means of a nFITS-1 (PPTV-1):"potentiometer according to the compensation method, a mirror galvanometer serving as zero instrument. The temperature dependence of the resistance was investigated (see Fig. 2), after which the samples were taken out of the ampoules, processed or coated with lacquer, and the measurements were then repeated. The results of measurement of the temperature course of resistance on etched and processed samples (ground with sand or methyl alcohol, or treated with Card 2/4 "K 81347 Investigation of the Surface Electrical S/181/60/002/03/01/028 Conductivity of Germanium Single Crystals Boo6 B017 paraffin), or on samples coated with lacquer are shown in a Table. Pigs. 3 and 4 show the resistances of samples coated with lacquer as a function of temperature. n-type germanium tends to reduce the relative resistivity with increasing temperature, whereas p-type germanium shows a certain increase (Fig. 5). As may be seen from Fig- 3, the electrical resistance of the layer near the surface decreases in n-type germanium for samples with lacquer coatings, whereas it increases in p-type germanium. The authors try to explain some further results of the various processing methods. Hence, e.g., the increase in the resistivity of n-type germanium treated with CH30H is explained by the interaction between the OH-group and the surface dipoles as well as by the resulting reduction of the electron concentration in the layer near the surface. The decrease of the resistivity of both germanium types after a treatment with finest sand is explained by the occurrence of surface conductivity. Student E. A, Anpilogova took part in the experiments. There are 5 figures, 1 table, and 9 references: 6 Soviet, 2 US, and 1 English. Card 3/4 81347 Investigation of the Surface Electrical s/181/60/002/03/01/028 Conductivity of Germanium Single Crystals BOo6/BO17 ASSOCIATION: Sibirskiy fiziko-tekhnicheskiy institut pri Tomskom universitete im. V. V. Kuybysheva (Siberian Institute of Physics and Technology at Tomsk University imeni V. V. Kuybyshev) SUBMITTED: June 23, 1959 Card 4/4 21513 ~,,q3 0 0 (3 03 / 3 oes') //37) S/139/61/000/002/008/018 E032/E4i4 AUTHORS. Yrlvov,.M*Ao, Malisovag Ye.V., Presnov, V.A. and Synor2y,-V-J- TITLE. A Study of Some Physical Properties of Polycrystalline GaAs PERIODICAL. Izvestiya vysshikh uchebnykh zavedeniy, Fiz'AIM, 1961,.No.2, pp.66-70 TEXTz This paper was first reported at the Third Conference.of Schools of Higher Education on Semiconductors and Dielectrics, Leningrad, 1960. The resistivity, thermoelectric power and the Hall coefficient of polycrystalline specimens of gallium arsenide were measured. The original material was synthestmed directly from arsenic and gallium and was zone refined six times (this will be described In a. separate paper). The final specimens were rectangular In form - and their dimensions were 2 x 2 x 7 mm3. The resistivity and the Hall coefficient were measured with the aid'of ohmic tin contacts fused into the specimens in a vacuum at temperatures of the order of 6oo to 700*C- Before me-asurements were begun, the specimens Card 1/6 21513 S/139/61/000/002/Oo8/oi8 A Study of Some Physical E032/E414 were immersed in a solution containing 20 ml of NaOH and 4 M1 of 30% H202 (G.A:.Averkiyeva, 0,,V,Yemellyanenko, Ref. After this treatment they were washed in boiling distilled water. Fig.1 shows the temperature dependence of the electrical conductivity and carrier concentration calculated from the Hall measurements under the assumption that the hole-concentration was negligible. It is estimated from the slope of the curve representing concentration as a function of temperature that the activation energy of the donor impurities was 0.12 ev. Fig.2 shows the thermoelectric power as a-function of temperature for two gallium arsenide specimens at different average temperatures. Using the Pisarenko formula (Ref.2) the magnitude of the effective mass of the carriers was estimated to be of the ordbr of 0.27 moo The experimentally determined temperature dependbnce of the concentration was compared with its theoretical value computed from the formula Card 9/ 6 S/139/61/000/002/OoB/ol8 A Study of Some Physical ... E032/E4i4 0-68 K,+ 112 n .2 + (K.+N.)' K, (21rm-vk Tlh*1)112 e-dcAjkT where NA and Na are the donor and acceptor impurity concentrations, mxe is the effective electron mass, and Ja-CA is the donor activation energy. It -was found that Njq = 1.18 x 1018cm-3 and N. =-1.10 x 1018cm-3. in addition, the contact potential difference of gallium arsenide specimens'.relative to a standard platinum electrode was measured. The measurements were'earried out on polished and etched specimens in air and in vacuum at various temperatures in the range 2o to 850C. Fig.4 shows the iemperature dependence of the contact potential difference of germanium and gallium arsenide in air. The'. continuous and dashed curves refer to etched and polished specimens respectively. F1g.5 shows the contact potentlal difference as a function of air pressure after etching. Fig.6 shows the variation Card 3/ 6 21513 3/139/61/000/002/008/018 A Study of Some Physical ... E032/E4111 in the contact potential difference.on heating in vacuum. A quantitative analysts- of these resxilts i_! not'given since ther specimens were polycrystalline and the results are therefore said to be tnot entirely reli&blet'. The general conclusion is that changes in the surface properties of gallium arsenide are associated with the properties of surface compounds formed during the etching process and subsequent adsorption of components from the surrounding medium. Students-I.A.Vinitskaya and L.Ye.Smirnova took part in the measurements. Acknowledgments are expressed to the Senior Scientist of SFTI, Candidate of Physical Mathematical Sciences A.P.Izergin and Engineer V.A.Zgayevskly of the Technical Division for taking part in discussions of the results. There are 6 figures and, 6 references: 3 Soviet and 3 non-Soviet. ASSOCIATION: Sibirskiy fiziko-tekhnicheskiy inst1tut pri. Tomskom gosuniversitete Imeni V.V.Kuybysheva. (Siberian Phyalcotechnicai Institute at the Tomsk State University imeni V.V.Kuybysgev) SUBMITTED: October 17, 1960 Card 4/6 SYNOROV. V.F. N. Mew temperature of brushes of electric machines. Izv.vyo.ucheb. zav.; fiz. no-3:71-75 161. (KM U;8) 1. Sibir'skiy fiziko-tekhnicheakiy institut pri Tomskom. gosuniversitete im. V.V.Kuybysheva. (Brushes, Electric) J 341-91 S/139/6i/ooo/oo6/010/02-3 E039/E414 0 0 35 ~~ / / AUTHORS-, _Lynorov~ V.F-,, Davydova, T~G, TITLE" On ~.he question of investigating ertain orga-niz .:oatings for protec~ting the surf-a.:e of' semiconducl~cr devi~--es PERIODICAL,, Iz.vestiya -ysshikh uchebnykh zavedeniy. Fizika. ~ 7 4.-.- 8 o no.6, 1961-, TEXT,d Loss of stability and reliability in semiccnductor diodes and tricdes appears to be mainly due to surfa--e pro:esses. The authors have, therefore, examined the effect of the following coatings on the parameters of semiconductor devices,. a standard compound with a base of buty-Imethacrylate - Mk"-3 NBK-3yi 11! parts by weight of epoxy--r-esin ;)--40 (E-40) and 2 part!3 ~~O% solutton hexamethylenediamine in alcoho---, 17 parts by weight of epoxy-resin 'a;J-6 (ED-6) and 2 parts 50% solution of hexamethylenediamine in dibutylpb+halate, 17 parts by weiglit epoxy-resin E-40 and 2 pa!,ts 50% sjlu~ion hexamethylenediamine in dibutylphthalate, 17 par's by weight. epoxy-resin E-40 and 1~6 par*i ~r7i - -d! /3-D _~4 1319J- S/139/61/000/006/010/023 On the quL-z-:tion r-?t- E039/E414 505'a soluti.-in heKamethylen,&d_iamjne in dibutylphthale te, The hexamethylenediamine is a hardener uSed at room tempe!7at-urs: and -he dibutylph.halate is a plasticizer for reducing -,he brittlene-5-i of the ..-beatings, The germanium triodes -ere first in a btAling solution of 305'0 perhydrol, rinsed for I to 2 min in boiling distilled water and then dried for 3 hour6 at 1210 C~ Before applying the coatings a i_eries of ~~ontrol measur:ements wex-s inads, of the amplifi--a-tion coe:ffi~.ient and the current, The samples were than :boated., dried for 8 hours ai a temperature of 70 to 80'C and the ineasu-sments rapeatedc The Y-esult.s obtained are given in f1gures and tablezi _~-howjng the most probable values of the zoefflcient and ,'he r-e-rer!~e --ollevior cu-t-rent, The experimenl~!~ fnd.i~_ate tliat quite -different (~~-henii --,ally) r-Datings give rise to ~imllar .hanses :n the pa_ramer_er-_;, A' the germanium triodes. To a fi.r-t approximation the mechantim of th=-se effez;t~~z can be i-xplained 'by changes in the surfae potential associatad with the adsorption of polar mole-,ule5 of the coating by the germanium ~_urfaL~e-, There 1 ( rL 0 V, S oe 'L - b lo Me four mos- rezen, ceferencc-_ cc, English On the question of 341-51 S/139/61/ooo/oo6/010/023 E039/E414 language publications read as follows: Rof-3., H. Statz, de Hars, . Davias, A. Adams,, Phys. 1956, 1.272-, L- Rev., v.101, no.4, Ref.4. W,T,Eriksen, 1-1. Statz, G.A. do Mars. J. Appl. Phys., v.20, no.l. 1957, 138,, Ref.5! J.T.Wallmark. RCA, v.18, 1957, 255i Ref.6., J,T.Ifallmark, R.R.Johnson, RCA Rev. v.18, no.4, 1957, 512, ASSOCIATION~ Sibirskly fiziko-tekhnicheskiy institut gosuniversitete imeni V.V.Kuybysheva (The Siberian Physicotechnical Institute University imeni V.V.Kuybyshev) SUBMITTED, October 19, 1960 pri Tomskom of Tomsk Card 3/3 h3113 S/181/62/004/011/CO6/049 B102/B104 AUTHORt Synorov, V. F. TITLEi The influence of a chemical Areatment of germanium surfaces on the electrical properties and bn the stability -PERIODICAL: Fizika tverdogo tela, v. 4, no. 11, 1962, 3065 - 3074 TEXT: Ground n-type Ge surfaces were etched with various agents and the resulting changes in electrical properties such as surface recombination rates, contact potential differences (Ge-Pt),.surface conductivity, and field effects were investigated and compared. The following etching agents were used: a) 30~6 H202 solution, b) r-P-4 .(SR-:4) ( nitric acid, 5 parts hydrafluoric acid, 3 parts acetic acid)# C) WAg (4 cm 3 HF, 4 CM3 H 20, 2 cm3 HNO 2f 200 mg AgNO 3), and d) r-P-8 (SR-6) (1 part hydrofluoric acid and 2 parts nitric acid). Some of the etched samples were washed, dried and ' immediately investigatedi some were exposed to air, nitrogen or water vapor before the measurements were takenj some were heated (up to 65000. Some Card 1/4 The influence of a ... 8/181/62/004/011/0()8/049 B102/B104 from SR-4 to SR-8. There are 7 figures and 2 tables. ASSOCIATIONt Voronezhskiy gosudarstvennyy universitet (Voronezh State University) SUBMITTED: March 3, 1962 (initially) June 4, 1962 (after revision). A Fig. 3. a) Ge-Pt terminal 5- potential difference (solid line), zone curvature (dashed line); surface conductivity T (solid n line), volume charge density (dashed line);4Q surface recom- bination rate S (solid line) surface charge (dashed line). Card 3/4 L-18997-63 EWP(q)/EWT(m)/BDS AFFTC/ASD JG/JD ACCESSION NRt AT3002457 S/2935/62/000/000/0221/0228 AUTHOR: enorov, V. F.; Dlyakov, V V.1.Bobrova, L. 1. 0 TITLE: Effect of chem~icai treatment on' the surface characteristics of_Zqrmanium. and on the parameters of semiconductor devices [Conference on Surface Properties of Semiconductors, Institute of Electrochemictry, I-NSSSR, Mosoow,-5-6 June,i-9-6-17 SOURCEs PoverkhnbstrW*ye svoystva poluprovodnikov. Moscow, 1zd-vo AN SSSR, 1962, 221-228 1TOPIC TAGS: chemical treatment, germanium, semiconductor, surface characteristics, semiconductor device ABSTRACTt An experimental development is descr&d of a stabilizing,protective,' Hpassive# coating on Ge surface. The sulfidizing bath comprised: (a) low-melt chemically neutral saltsi (b) active sulfides whose atoms have reduction propertie (c) a catalyst salt. n-Ge specimens of resistivity were sulfidized for i20-30 min at 430-450C. The 2-4-micron coating was found resistant to HC1 and BF, to vacuum heating and to 450C heating in N atmosphere; its moisture absorption was found to be very low. Measured by the photomagnetic method, rate of surface recombination of sulfidized Ge was 44-64 cm/sec. Alloying In through the sulfidize AS S INT: Tomsk State University. Cardl)k/ 0i -- - ---. -- - ---- -,-- - .--. ---- - - ---- L 1899?-63 ~ACCESSION NR: AT3002457 surface at 550C resulted in a few batches of p-n-p Go transistors whose characte- ristics were tested (curves presented). Authors$ concluGionst (1) Principal possibility has been proved of obtaining a stable compound on the Go surface by means of sulfidizingi (2) The resulting surface has better mechanical characte- ristics and is less liable to hydration than the untreated Ge surface; (3) Electrical characteristics of the surface are stable; (4) Ohmic contact is possible by fusing-in tin through the gal-fidd~991-in-9,00) Possibility has been i roved of obtaining p-n junctions by alloying In through the sulfide coating; Parameters of test transistors have been stable to the effects of atmosphere and water vapor at room and higher temperatures. Orig. art. hasi 7 figures and 2 tables. ASSOCIATION: Tomskiy gosudarstvanny*y universitet im V. V. Kuyby*sheva (Tomsk State University),- SUBMITTEDs 00 DATE ACQj 15May63 ENCLI 00 !SUB COM PH NO REF SM 000 OTIER t 007 Card 2/ 2 ACUSSION N-R: AP4025083 S/0139/63/000/006/0028/0033 AUTHOR: Sy*norov, V.'F. TITLE: 7--perimental verification of alloyed germanium triode parumeters as a ,"unc4-ion of surface recombination rate SOURCE: IVUZ. Fizika, no. 6, 1963, 28-33 TOPIC TAGS: bare triode, junction triode, surface recombination, p-n transition, 11ener effect ~_BS-'T_UCT: An experiment has been carricd out with bare triodes of the type P-5 to verifl! a formula derived by B. Ya. Movxhes (ThTP, 28, 2402, 1958) for calculating them- operating parameters of junction tr;.odes, including volume and surface recombi- nation and the actua.3. geometry of.%~-_- trio&!. Two independent methods of measure- ments were used.. The first was by etching tb.e indium, alloyed-with germanium, with lVdrochloric acid and then measuring the depth of germanium fuse on the emitter and collector with a microscope. In the second method the fuse depth was determined by glass etching and using a continuous probe determination of electron and hole con- -duction region boundaries from osoillograph volt-ampere chaxacteristics. The ,amplification coefficient was plotted as a function of surface recombination rate i~_ard. 1/2 KUCHUMOV, A.P., kand,teldm.nauk., dotsent; SYNOROV, V.F., kand.tekhn.nauk, dotsent Physical processes in the brush contact. Trudy OMUT 40:189-2M 163. wa ks 3 8) L. 2111-6 EWG(J)/EWT(m)/EPF(c)/EP.R/EWP(q)/EWP(b) Pr-4/?s-4 ASD(a)-5/ RA EM & JD ACCESSION NR: AP4043866 S/0139/64/000/004/0061/0067 i t AUTHORS: Sy*norov, V. F.,-. Tolsty*kh, B. L.; Va _s~illyeva, V. V. TITLE.- Investigation of the possibility of protecting the surface of diffuse silicon electron-hole junctions by means of an oxid 2--1ae f ilm SOURCE: IVUZ.'-Fizika, no.*4, 1964, 61-67 TOPIC TAGS; silicon rectifier, diffusion pn junction, doping, di- electric breakdown, surface layer, oxide ABSTRAC'T: The purpose of the work was to investigate the possibility of simultaneous utilization of a thick surface layer of silicon oxide, both as a mask in selective diffusion and as an additional sur- d the face protection film. To this end, the authors investigate electric-properties of diffusion*silicon pn junctions 63tained by diffusion of boron in silicon doped with phosphorus. The thick sur- L 2111-65 TLCCESSION NR: AP4043866 0 face oxide film (1--2 microns) was prepared by oxidation in water !,vapor and by oxidation in an atmosphere of moist nitrogen. The sam- ple production. procedure is described. The depth of the junction was measured by taking an oblique cut through the junction and mea- suring the sign of the rectification with a pointed cold probe. The usual depth for boron was 8-10 microns. The protective film was found to reduce:the breakdown voltage of the junction, which was restored to its initial value after removing the protective film (by etching). However, the protective film did make the junction istable against tropical moisture conditions. The reason for the re- I duced breakdown strength in the protected junctions is analyzed from the point of view of redistribution of the doping impurity during the course of oxidation, the one-dimensional surface-breakdown the- ory, and the Shockley theory. All indicate that one of the probable 'imechanisms for the reduction in the breakdown voltage is the in- crease in the impuri-ty.'concentration'on the interface between.the silicon and the silicon dioxide. Orig. art. has: 6 figures and 1 Card 2/3 L 1304-66- - ---- -- ACCESSION im: AP5oi2544 IhVOIBI/65/007/005/13b/13 ;AUTHOR: . Snorov, V. F. * Bulgakovp S. S. StepazWv,, V. 'I. `iifect' of low-energy TITLE: _gjtE9Len ions on the surface of g2rmt~nium SOURCE: Fizika tverdogo tela, v. T'p no? 5., 1,065, 1375-13TT 21'~17 ITOPIC TAGS: surface ionization, conductivity, pn junction, volt ampere character- i istic, ionizing radiation ABSTRACT: The authors investigate the changes in the properties of germanium when Ats surface interacts with nitrogen ions having energies 1-3 keV. Germanium plates measuring 12 x 5 x 0-3 mm and having specific resistimity 10 ohm-cm, the surfaces of which were etched after polishing, were used. The samples were bombarded in aD paratus consisting of a high-frequency ion source., an acceleration tube, and a current-transmitting sample-clamping system. The working gas was commercial nitro-:; 9' en fromwhich the impurities were first remwed. The conductivity of the germani-' !*om was measured with a double bridge directly in the irradiation chamber. In some :experiments, a non-bombarded pn junction was investigated. The volt-ampere-charac-~~-` Iteristic- were plotted in the usual fashion. The effect of the bombardment was Audged from the change in the conductivity in the irradiated germanium with time, ;and also by a more accurate method of.measuring -the change in the inverse current Card 1/2 DIT AUTHOR: Synorov.. V. F.; Kuzju 777 )/T/EWP(t)/~W(b) IJP(c) JDA4 SOURCE CODE: UR/0F. Y/45/0101006/0918/0920 tsom. Yb. Ai'~ PM 4, TITLE: The structure of silicon and germanium sulfide surface layers SOURCE: Kristallograftya, v. 10, no. 6, 1965,118-926 TOPIC! TAGS. silicon single crystal, silicon compound, germanium single crystal, germanium compound, protective coating ABSTRACT: Numerous attempts were made recently to produce oxygen-free surface com- pounda on silicon and germanium crystals. In the first part of the present paper the authors investigated, using electron diffraction analysis, the structure (in particulm hase 14he p composition) of the sulfide layer created on the surfa`c",~'o'f _ar'S-fmonocryistal processed in a special suffidation tank. The experimental results obtained for the lattice plane distances are in good agreement with the theoretical data for SIS. The second part of the paper is devoted to the study of the structure of germanium sulfide layers produced on the surface of germanium. monocrystals during their reaction with sulfur vapors. The Debye diagram utilized the Cit K. line. The comparison of the experimental and theoretical values for various e lattice plane distances showed that the stable chemical compound formed to Indeed prystallin GeS. Differences in color of such layers are due to differences In thickness only. orig. art- has. I figure and 3 tables. UDC: 648.736 .77 -1 1577N66 =-m)/-T/Qw4WW-b)--S1jP'c) JD - ACC-MT-AT50282 OURd COrEs UB/00;~6/6~M~/06AJOW0394 AUTHOR: Synorov., V. F. MG; Voronezh State University (Voronezbskiy gosud'aratveny7 iiniveroltet) TITLE: Use of surfaces of inorganic germanium compounOv for increasing the le c stability of german1upi sing SOURCEt All SSSR. Doklady, ve 165., no* 2,t 1965p )91-394 TOPIG TAGSs germanium compound., single crystal, su-Mde, nitride, ra,31ograpby.. 1, CIA,; ABSTRACTs Germanivm oxidesp alwayo present on the surface of gazzanium, do Uat secure the stability of electrophysical parameiters of go=anium, A. study was made of the reaction of sing-le-crystal germanfi= with sulfur and ammonia to determine the effect of sulfide:2 and, nitrides on the surface properties of germanium. A uniform monoe'u]Jlde gold-colored layerp, -1/1- thick,, was formed on the germanium crystal after treatment for'5 minuteb in tubular furnace by sulfur vapors at 4400 and 17 mm Ug pressure of the sulfur vapors* The structural Bad ahemical X-ray 113 UDGs 621,315#592t537 7~ 11577~0-_-6 AGG WR i AP50282$6 analyses showed that the film consisted of GeS of orthorhombic structure (a=4.299 A, b--10 4/, A 0=3.647A), with - a, resistivity Z_ 4.105 ohm cm, and a break- down voltage of ix/-c'm. The surface layer dissolved during prolonged storage in Nater at room temperaturep during bolling in waterf and in weak alkaline solutions,! The nitrIde layer (11L ) produced on germanium, crystals at 800 G and with 780 mm Rg pressure of the ammonia vapor did not dissolve in water, acids# alkaliea and other aolv6nts even during boiling. A reduction of nitride b7 hydrogen occurred at, temperatures > 600 C.' The nitride layer consisted of Ge N p had a hexagonal structure (a*13.3 A, c-9.4 A. a-8-53 As a-1070451) in tha fowdr dense part, and an orthqrhombic one U-AS -BlogP) in the upper Tri ble juartj the resit3tivity was >1010bm cm and the breadown voltage amounted to 101v/ane The contact potential difference (,AU) was' measured by the condenser method and the dependence of A U on water-vapor pressure was determined foi; sulfidized ani., -itrided samples, For the. water-vapor pressure range of lG-4-lQ-Jz=-Hgv it wasexpressed by: the equation* ,W-AS-Bglog Pp where P is the 'Water-vapor pressure in mm Hgs A and B are the constants equ4 to 0.16 and 0.05 for sulfidizedt and 0.12 and O.M for nitrided ~ 5,9(f the effect of the Measure of oxygen on AU sampleap respectively~,OA~rr ', -the adsorb )0.~ showed that oxygen on sulfidized and nitrided surfaces of germanium increa-s-ed-U-awdik function by 0.05 and 0.035 ev,, respectively. The lome 2/3 ACCNR:____ 0_____ AP70 1940 - - - SOURCE CODE: UR/0120/66/000/006/0061/0063 AUTHOR. Kryachko. V. V.; Synorov, V. F. ORG: Voronezh.State Univer sity (Voronezhskiy gosudarstvennyy universitet) TITLE~ Beta-spectrograph for irradiation of semiconductors in a range from 0.1 to 1 kev SOURCE: Pribory i tekhnika eksperimenta, no. 6, 1966, 61-63 TOPIC TAGS: spectrographic camera, spectrographIc analysis, irradiations irradiation effect, electron bombardment ABSTRACT: A Jescription s ven i gi of a beta-spectrograph designed for use in investi- gating the effect produced by electrons on semiconductors in the range from 0.1 to 1 kev. This spectrograph makes it possible to maintain an ultra- constant target temperature and to easily replace the target and the cathode.. ~.The desian should satisfy the followinz co'ditions: 1) light emitted by the. n d cathode should not strikd the target; 2) relative error in the determination of the electron energy should not exceed 1-2%; and 3) the target should have maximum protection against impurities resulting from dissociation of the cathode and against the condensation of the'vapors of organic substances. 1 f The resolving power of the spectrograph was D-1 - 0.9%. Maximv-i density Card ACC NR: AP7001940 of'the beam current du--ring op-eration with a tungstnn cathode was approxi- mately 10-6 amp/cm2. Pulse rise time during Ipulsed irradiation was 0.2 psec. The spectrograph was used to study changes of the surface energy states of germanium acted upon by electrons with an energy of 100-400 ev. The elec- trons generate a positive charge in the natural oxide film, coating the .,germanium surface. As a result the surface conductivity shifts from p- to n-type. The shape of the curve representing the dependence of the-sur- face recombination s on the surface potential Os for germanium processed in H.0 changes considerably during electron irradiation. In addition to the 4 2 fundamental stable maximum S, a second induced maximum at < 0 with a large amplitude value S appears as a result of irradiation. The amplitude of "he induced maximum diminishes spontaneously to the initial level 10 to 15 min after irradiation. It is shown that'jthd-fiature' of the induced maxi- mum S is associated with the recombinationlicqnters, whose effectiveness depends on the positive'.charge appearing in ~he oxide film.- Orig. art. has: 1 formula and 5-figuti--s-. ISUB CODE: 20/ SUBM DATE: 20Nov65/ ORIG REF: 005 ATD PRESS: 5111 Card .2/2 SYNOVETS. A.S., dotsent Change in the protein fractions of the blood in acute intestinal obstruction. Vrach.delo no.12t52-54 D t62. (MIRA 15:12) 1. Kafedra fakulltetakoy khirurgii (zav. - prof. M.F.Sokolovakiy) Odesskogo meditainskogo instituta. (BLOOD PROTEINS) (INTESTINES-OBSTRUCTIONS) SnOVETS, A.S.; BUTMIKO, G.M. State of the hematoencephalic barrier in aaute intestinal ob- struction. Vrach. delo no.1 106-59 N 163 (MIRA 16:12) 1. Kafedra fakulitetskoy khirurgii (zav. - prof. M.F.Sokolor- skiy),, kafedra patologicheskoy anatomii (zav. - prof. Ye.A. Uspenskiy) i kafedra patologicheskoy fiziologii (zav. - dotsent S.M.Nints) lechebnogo fakullteta Odeaskogo meditsinskogo in- stituta. -SYNOVETS~.A. S.; BUTENKO, G. M. Distribution of radioactive chlorine in the organism of a rat with acute intestinal obstruction. Dokl. AN SSSR 156 no. 1: 228-229 My 164. (MIRA 17:5) 1. Odesskiy gosudarstvennyy meditsinskiy institut im. N. I. Pirogova. Predstavleno akademikom, L. S. Shtern. SYNOWIEC, Adam AuiCLliary equipment for limnological research in winter; ice drills. Przegl geogr 30 no-3:485-488 158. (EEAI 9:8) (Limnology) (Ice) SYNOWIEC, Aleksander Standardization in the service of technical progress. Wiadom gorn 11 no. 9:311-313 S 160. 11 Iff It 12 U W a IV It a It 00 00.11 00A 00C 008 *08 000 00 001C I TI Action of Inhibitors In tho Acid Picklift of Stool. Put Il. K..-SWAlowski, and M. Szot4j. (Prace Badavess Glownego Instytutu Kot&lurgii 1 Odlewnictwa, 1950, No, 10 pp# 31-35). SO Psol.Lshl No eatisfactory results were obtained when various structural 1,21 re pickled in sulphuric acid at 40*C. using dibensylsaphide as an inhibitor. With mixed povAers of electrolytic iron, nickel, a:t~ copper the inhibiting efficiency of dibensyl- sulphide as an inhibitors Imith mixed powders of electrolytic iron, nickel, and copper the inhibiting efficiency of dibenzyl3ulphide in greater than with iron powder alone or with iron vW graphite. Ahe adiorption of aniline and diph*nylaaine by electrolytic iron powder was tested by experimentsi they had very feeble inhibiting action on stools in sulphuric acid*-jt. A. us I L A __AITALLI)RCKAL Lill*AYLOE.CLASSWICATION slow 11"aliv. 18104a mat 4PIV aft 0 '1 It 0 9 A 0 3 1 7-1 0 0 0 a a 0 a 0 010 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 *1 Ah MK 1* 0,00 0-10410000000000000000460 -0# -00 ' 00 -0 00 109 ZOO Soo Soo POLA14D / Chemical Technology, Chemical Products and H Their Appitidhtfons. General. Abs Jour: Ref Zhur-Khiniya, 1959, No 4s 12032, Author : Hobler., Tadeusz; Synowiec, Jerzy. Inst :Not given. 7-:_-',~- -_ " Title :Investigation of Irrigation Installations with Horizontel Pipes. Orig Pub: Chem. stosow,., 1957,, 1,, No 2, 123-139. Abstract: Investigations of irrigating horizontal heat ex- changers were conducted to select the optimal construction of an irrigation network,, as well as to determine the influence of diameter and rela- tive distribution of the irrigating pipes and temperature of the irrigating water on the effect- iveness of the heat exchange, -ard 1/3 SY%YOWIEC, J~z ,HAWLICZEK, Jozef Methods of organizing the management of hydrogen chloride waste products. Przem chem 39 n0-8:478-485 Ag 160. 1. Instytut Chemii Nieorganicznej, Gliwice HAWLICZEK, Jozef; Research on hydrogen chloride desorption from aqueous-solutions. Pt. 1. Chemia stosow 6 no.3-:369-387 162. 1. Instytut,Chemii Nierorganicznej, Gliwice. (S B I 1--.:) 2 t Z7 5--` F,3 164o J L n1c, C, a ug, 6, SyNOWTEC, Jerzy-- UCBFt(A'N-1CF1, Wledzimierz . 1", 0 Studies on the hydrogen chloride desorption from aqueous solutions. Pt.2. Chemia stosow 8 no.4i383-403 164. 1. Institute of Inorganic Chemistry, Gliwice, and Department of inoruanic )Technology, Technical University, Wroclaw. 0 sylluiarmi' 4-1. "Crystallic procaine penicillin" p. 268 (chemik, Vol. 6, No. 10, Oct. 1953, Katowice) East European Vol. 31 No. 3 4 SO: Monthly List of iWik( AccLasionsi Library of Congress, March 195x, Und-1. I SYNOWIENKI, A* SYNOWIBDZKI, A.; KOJ31R. R.; ICROWOZYNSKI, L.; WAGNER, R.; GRUBER, K.; Studies on stability of hemopoietic factors (vitamin ?12) in concentrate of liver extract and in the presence of potassium cyanide and cobalt chloride. Parm. polska 10 n0.5.1306-132 W~ky 154. 1. Z Instytut Farmacautycznego w Warezawie. Dyrektor wgr W.Gu=Wca. (VITAMIN B12, stability in liver extract In presence of potasnium cyanide & cobalt chloride) (LIVER EXTRACTS, stability of vitamin B12 in presence of potassium cyanide & cobalt chloride) (GYANMS, effects, * potassium cyanide, on stability of vitamin B12 in liver extract) (COBALT. chloride. eff. on stability of vitamin 312 In liver extract) I t I q ~fk it TTT Ito? Oltt 101 " , - ":,o f'o r Q A -,A.- -L-, -L L AA IQ M U CINDt4i -00 of loo 0 eptheses al caffeinto EA4 OW a. Borulaw i --oo Bobnu*M and Zdaiskw SYnowiedski YMliv. Wanaw, '00 go poland). J. .1m. 1%irm. Asj-. &1. 37. 1-00 o (19410-From C%'Ci1,CO,(( and uteas in th, 11reultev of I. -ctylurca. which "!& ChAnitt'l to I - 00 Ae,O wai pirclid. cyanott, =00 (1) fly nit-ails of 00.71 NaOll. Ott aldinx NtN(h and 101, t(iSO. to 1, icr 00.3 641*~ 6-ituinovioluric acid tH) wati obtained as rr,f in Ir"tals. Rt:Auctiots of It by Zu and U.-SO. )icided , tj, :106 Oov 00 4,5-diamino-2,:I-dihydro%51)yrittLiditic iulfatc. which with 00 anhyd. IICO-.N'a and IICO.-II yielded 00.57c 4-amino-5. frjrtnainido.".O.dihydroxyp)rimidint (M). Methytation 0 ~02, of III with lte,.SO, In alk. moln. vir,utured 37. '11, caffeine. goo NiethylAtitin vrith.W~;O. jrtve fltl'~ I.I.Ii-Me it,-riv..)( 1, 144~, whiels with XiNO, atid W"t, A,011 wa, chanp-d to ci 0 acid llv~. purple cr~,t.kl, goo 00 " 1~1 =90 t84.5~ yichl). IV with 911~a 11COJI and Zu 1)ov%,,[,-r Yielded 62.YO 1,3~litilcthyl4-amitio-54orTnarnitio-L).t;- dioxotetrathydropyrimidine (V), which with 40% NA011 Wee produced 8070 theophylline. Ff. Bernard As L A ETALLD-GUCAL LITERATURE CLASSLPICATION am[ is, uIs AT OMO si,;- -V j r , 0 tr it ir it Ot L S ont; 00:0600000000of*600044460000000 OT,40'Oooeoo::I:::::........00000-00010000 000, ooooeoo:: uw7pi~ad lber-of-dwed The elficany or L-Y In the war 3DZKI Zdzislaw SYNOW v - . . Now penicillin preparation containing proealne salt and potassium bensyl penicillin. Polski tygod. lek. 9 no.42:1358-1359 28 Oat 54. 1. Z Zakladu Antybiotykow Inetytutu Famacautyosnego w Waresawie. (PAN IGIUM, derivatives, .potassium pentoillih G with procaine penicillin) rM 6Vo vv /, C- D -5 A/ Z D 7- /,S L- .4 YV SYNGWIIWSKI, Zdzislaw; MIODUSZWSKI, Jan Zbigzkiew; SIKORSKA,, Janina; bZAFIE"UNA', Halina. DeXtran as plasma substitute; investigations and method of prepara- tioh. Acta Poloniae pharm. 11 no.2:97-112 1954. 1. Z Inst~rtutu Farmce:atyqpWo. Dyrektor: vgr W.Guxulka. (DAMAN, *pharmacol. & prop.) IVOvVIG'O L A Z- SYNOWIERZ ,Z.-. KOJJ1R, R.; KROWCZYNSKI, L.; WAGNM, R.; GRUBER. K.; c Ro Stability of hemopoietic fa--tore iu donceutrated liver extracts. Acta Poloniae pharm. 1954. 1. Z Instytutu Farmacoutycznego w Warssawle. Dyrektor: mgr W.Gamilks. (LIVER EXTRACTS, *stability of hemopoletio factors in) Z. Blood-forrain- drua Produced from liver. P. 165. r, 1 t I T 7 TI,) C~"7 , Katowice, Vol. '), no. 6, J:tne 1055, "onthly Li-t o~ European Accessions, (-MIAL), LIC, Vol. 4, no. 10, OcL. 1955, Uncl. SYIK)'[I',MZXI,Zdz. Doc.14gr.; PIASKOWsKj,st. Mgr. '"49SAM "I L=;~- Crystalline penicillin tablets for oral administration. Farm. polska 11 no.1:7-10 Jan 055. 1. Z Zakladu Farmacji Stogowanej Instytutu F-nrmAceutycznego w Warszawie. (PMUCILLIN, adminietration, oral, crystalline penicillin tablets) 21 . 41Z7 -61.5,779,932 ,66 1.183-2-- 1 T -of Syno%,vIedZcI Z. Plebaftski T. A Shld3r -the -Applfcatlon of Activated-- "'Ca.bur% Carbopol" for Separation of ImpuriVes In the Process of Preparation o: Cristallinc Penicillin. d9adania mid _,:astosowmiem w(:j,1i Atywii)-ch !,Carbopol" do od- dzielanlci zameczysm~ze6 vi procesic otrz:-myvvanla RrysW1iczrcj pool- cyliny". ilrzemysi Chemkzny. No, 5, 1956, pp. M-213f~, 3 1~93., 7 talis. given for purifying penicill:n tyy using activated Condition~ zre I carbon -Carbopol". Se~,enteen carbons were Inuestigatcd and it was iound that the beit results in purifying peniefflin were ol)talned with Xurboool N-2" (acid carbon with hfigh ii(korptinn propc-1-ti,!s) at Dif T.5. Th,, s~i~t;thle ext:iwps 1:j, ti~rfz !m- POLM/Acoustics - ul-trasonics j-4 Abs Jour : Rof Zhur Milm., No 4, 1959, No 6588 Author : Synowiedzki Z.., Topa M., Boldok Cz.,, Jankowska J. Inst Title ; The Application of Ultrasonics to the Biological Research on Obtaining Highly Effective Strains for the Antibiotics Productio4 Orig Pub : Proc. II conf. ultrason., 1936. Warszawa, FrM. 19W., 219-222 ,'.bstract :Exmeriments on the effectivejultrasonics on microorganisms have shown that this actionlis not limited only to destructive effects, but also causes intracellular changes, connected with the physiology and morphology of the microorganisms. lai in- vestigation was made of the effects of Dltrasonics on strepto- myces grisens spores for the production of stroptonycin. The action was realized in an equeous medium with variation in the irradiation parameters., after which the spores were grown on a solid medium, parallel with the unsounded microorganisms. The time of irradiation was 5, 60, 300, 480 ard 600 see. Card 1/P -SYNGIARIQ~Z. w ~ "The need of developing some branches of the pharmaceutical industry." P. 33 (Chemik) Vol. 10, no. 2, Feb. 1957 Warsaw, Poland SO: Monthly Index of East European Accessions (EEAI) LC- Vol. 7, no. 4, April 1958 T -ILL I- '* I 'I - ACC NR: AP6027355 SOURCE CODE: M/0102/66/000/002/0076/0081 AUTHOR: Rakov, M. A. (L'vov); Synytslk3,y. L.A.--Sinits~dy, L. (L?vov); Shumkov, Yu. M. (L'vov) ORG: none TITLE: Operation of a synchronous detector in multistable elements of automatic systems SOURCE: Avtomatyka, no. 2, 1966, 76-81 TOPIC TAGS: automatic control system, detection equipment, seruconductor device, harmonic analysis ABSTRACT: The article deals with the properties of a synchronous detector of the semiconductor triode type, which are of interest in connection with the problem of constructing automatic-system elements with many stable states. The performance of this detector in the presence of a square shaped input signal Is examined for the case of higher harmonics and subharmonics and various types of generators. The degree of the suppression of undesirable harmonics, leading to the possibility of misleading operation of the element, is considered. Simple working formulas, which proved to be in satisfactory agreement with the experi- mental findings on the development of an element with 10 stable states, are presented. Orig. art. has: 2 figures and 12 formulas. 1JMTS: 36,5171 SUB CODE: 09 / SUBM DATE: 1814ar65 / ORIG REF: 002 / OTH REF: 001 Cord 1/1 ---A/ . 11 "YN"I"MYS) B. Bee Culture - Mo3cow (Province) Increase the honey comb store of the bee colony. Pchelovodstvo 29 no.3:21-23 Mr 152. 9. Monthl List of Russian Accessions, Library of Congress, July -1956; Uncl. 1. n. 2. 2. USSR (6oo) 4. Bee Culture 7. Bee culture in the area of the great construction projects of communism. Pchelovodstvo 29. no. 111. 1952. b,,,= -1953. Unclassified. 9. Monthly List of Russian Accessions, Library of Congress, r,. SYINZYNIS, B. Bee Culture Planning beekeeping on the collective farm. Pchelovodstvo 30, No. 2, 1953. 9. Monthl List of Russian Accessions, Library of Congress, June 1953, Uncl. I SYNZYNYS, B.Z., kandidat ekonimicbeakikh nauk. Combination tractor groups. Hauka i pered. op. v selikhos. no.10:49-51 0 156. (MLRA 9:12) (Collective farms) (Machine-tractor stations) __7 ,SYNZYNYS, B.L.-SAMEDOV, S. "AnalyBis of the economic aspects of state farms* by S.I. Nedelin. Reviewed by B. 3ynz7nyB, S. Samedov. Bukhg. ucbst. 15 no.11: 56-60 N '56. (MLRA 9:12) (State farms--Accounting) (Nedelin. S.I.) 4 SYNZ-M-S B.Z., Icandidat ekonomicheakikh nauk. Hundred centners of pork per hundred hectares of plowlqnd. Nauka i pered.op.v sellkhoz. 7 no.6:13-14 Je '57. (MLRA 10:7) (Swine) MIKW,YMV, H.V.; SYNZYNYS, B.Z., kand. ekon. nauk. ............... Economic accountability within brigades and livestock sections of collective farms. YaWm i pored. op. v sellkhoz. 7 no.12-.47-49 D 157. (KIRA 11:1) 1. Sekretarl Pyatigorskogo glavnogo komndovaniya Kommunistichookoy partii Sovetskogo Soyuza (for Mikhaylov). (Gollective farms--Accounting) BAYEV, A.; SYNZYITYS, 3, 7-- I~fficient farm size and utilization of labor resources. Vop. ekon. no.3:111-1-19 Mr 160. (MIRA 13:2) (Khomutovka District--Collective farms) SYPCHMO, G.I., dotsent, kandidat tekhnicheskikh nauk. Theory of automatic variable-speed drives operated by the utilixation of centrifugal forcen of.inertia. Nsuch.trudy NPI 30(44):83-93 '55. (MLBA 9:11) (Gearing) (Moments of inertia) rSypchenko, 9.1. 1; I-ItILI'i',~EV, N.N. [I'lal, tsev, 1"J". I -- ---T.KAMM, LV.P.; KOVAL"I'TiK ., 1.".3.; 111AYMELIT, V.X. Application of various methods for measuring acetal~,i~~,yde cnn- centration in water solutions. Khim. prom,[Ukr.] no.1--'j4-(,,6 Ja-Mr 165. "MIRA 13:4) ALITSHUUM, Z.Ye., iazh.; BASTUNSKIY, M.A., inzh.-, BERSTEL', V.N.. inzh.; B1UNBS'RG, I.N., inzh.; BOGOPOLSKIY, B.Kh., inzh.; BUKHARIN, S.I., lnzh.; ORRbETSYN, B.G.. lnzh.; GRINSELPUN, L.V., inzh.; DIWYNR, G.I., inzh.: DIHOSHTLY11, A.G., inzh.; ZIATOPOLISKIY, D.S., iznh.; KIANM, A.Y., inzh.; KOZIN. Yu.V., inzh.; LEVITIN, I.P., inzh.; MELINIKOV, L.F., inzh.; MHLIKUMOV, L.G., inzh.; -UDILI, M.B., inzh.; PAVLOV, N.A., inzh.; FASUN, D.A., inzh.; PSSIN, B.Ya., inzh.; PYATKOVSKIY, M., inzh., RAZNOSCHIKOV, D.V., inzh.; ROZENOYER. G.Ta., iuzh.; RNEIBERa. R.L., inzh.; ROYTRNMG, N.L., insh.: RIABDISKIT, Yaj., inzh.; SYPCHENKO. I.1., inzh.; TARAaRNIKOV. L.D., iazh.; FALIDMAN, A.S., inzh G.Ya., inzh.; SETIOLVNGAS, U.S., inzh.; LUVITIN, I.P., otvetstvemW red.; STPILIMAKH. A.N., red.izd-va: RX R, O.G., tekbasred. [Overall mechanization and automatization of production processes in the coal industry] Komplekenaia mekhanizateiia i avtometizataiia proizvodetvanr,Vkh protsessov v ugellnoi protWBhlennosti. Pod red. IU.V.Kozina i dr. Moskva, Ugletekhizdqt, 1957- 82 p. (MIRA 11:3) 1. GoBudaretvennyr proyektno-konstruktorskiy institut. 2. Institut Giprougleavtomatizatsiya i Tekhnicheskogo Upravleniya Kinisterstva ugollnoy prOM.VBhlennosti (for all except: Levitin, Stellmakh, Bakker) (Automatic control) (Coal miningmwchiner7) BLUE, R.L.;'IIAZAROV.A, S.A.; A.M.; RUBINSKIY, S.I. 4qC jjX0, O.A.; ITMME'YSV, Yu.11.: YAKSANOV.A, Outdoor day naps during the cold season in the treatment of night sleep disorders. Vop.kur., fizioter. i lech.fiz.kullt. 22 no-3: 17-21 My-Je '57. (MIRA 11:1) 1. Iz Fyatigorskogo klinicheakogo otdeleni7a (7av. - prof. Ye.Ya. Stavskaya) Ballneologicheskogo institute na Kavkazakikh Mineral'- nVkh Vodakh (dir. - dotsent I.S.Savoshchenko) i klinicheskogo sanatoriya Pyatigorskogo kurorta (glavnyy vrach O.N.Smolenskaya) ( INSOMNIA) (SLEEP) SY T -ri - -I- TV~.-SITH52'KO i. P. Arkh. i SY-rCL',,TK, P. F. Jnzh., PiLY7jill", A. I. Kand. Tekhr. llaij-~, r. . .. - , 1. 1-10IMTRED, rU. 3., T. T. Farid. Tekhn. Nauk flauchno-issledovatellskiy institut straitellnoy tekhniki- Akademii arl-hitektury SSSR Ritsioriadln,Tje konstriktsii zliilykh i grazhdanskilch zdaniy dlya rayonov podzemnykh v,,Tabotok Page 68 SO: CoLlections of Annotations of Scientific HoseUmb-Isirk on Corotruction. completed in 195c), Koscoi;l 1951 C r"~ C r DC L c "i i 5"i 6 Czt 54) t 0 n s l'i t--;! a t 5 515 IVANOV, I.T.; MONYRM, Yu. B ; PILYUGIN, A. I.; SHRGVBV, D.D.; SY'PCHUK, P.F.; IZRAIWVICH, N.Te., inzhener, redaktor; F '- TWORAV,'4.6., redaktor; TOKER, A.M., takhnicheskiy redaktor. [Construction of dwellings and civil buildings in areas of underground coal. mining] Konstruktaii shilykh i grazh- dhanskikh zdanii v raionakh a podzemnoi razrabotkoi uglia. Moskva, Gos.izd-vo lit-ry po stroit. i. arkhitekture, 1955. 68 p. OSRA 9:1) (Building) SYPCHUK, P,vel Filippovich-, WSEV, B.S., nauchnyy red.; LYUBINSKAYA,A.G., red., ANTONYUK, P.D., [Assembling large-panel houses without a framework] Montazh krupnopanellnykh beakarkasnykh domov. Moskva, Vses.uchebuo-pedagog. izd-vo Trudrezervizdat, 1956. 90 p. (MIRA 10:12) (Precast concrete construction) SYPCHUK, P., kand. tokhn. nauk 1:~;klanpg thin-walled brick blocks. with heat ineul-ntors. Stroi. met. 4 no. 6:8-11 Jq '58. (14IRA 11:7) ( T,,-- - la t ion(Hen t)) kBuilding blocks) MOROZOV, N., kand. tekhn. nauk; SYPCHUK, P., kand. tekhn. nauk; SYRITSKIY, P. ANAN' INA, N. .' inzh.-ark)Tt~~~ One-story houses built of vibrated brick pAnels. Zhil. strol. no.8: 6-9 159. (MIRA 12:12) l.Direktor Nikol'skogo kirpichnogo zavodf:. (for Syritskly). (Nikollsk-Architecture,Domest:'.c) (Building blocks) I. MOROZOV, N.V., l-,and.tekhn.nauk;,SYPCHUK,_P.F.,; IVASHKOV, V.K., kand.tekhn.nauk; BOBYLEVA, K.S., tokhnik Tbin-walled vibrated brick panels. Rats.i iuobr.predl.v strol. no.12:20-31 '59. (MIRI, 13:5) 1. Po materialam Nauchno-issledovatellskogo inBtituta itroitellnoy fiziki i ograzhdayushchikh konstruktFliy Akademii Btroitallstva i ark-hitektury 333R, Moskva, til.Gorlkqgo d.3f3. (Building blocks) &-7H U- K-~ A. 19 :7 A 'a SYPCRU, P., kand.tekhn.nauk More about the strength of vibrated brick panels. Zhil. stroi. no.6:22-24 Je 160* (MM 13:7) (Building, Brick) (Building blocks) SIPCHUK, P.P., kandidat tekhnicheskikh nauk. , Design of relaxation oscillators used in cold-cathode gaseous discharge instruments. Trudy N7TU no.55:47-57 '55. (XLBA 9:8) (Electric discharges through gases) . __ I t. I 1 11 (OacillAtors, Electron-tube) . _ . ~. t .. , __ SYPCHUK) P. P. and D093ROSMLOll., V. I. "Algorithms and Mchine Logic for aolving Problette C oted vith the Economical Analysis of the Activity of Manufacturing Plants. /to be report submitted for the Int'l, Conference on Information Processing, Paris, 13-23 June 1959. PALASHYVSKIY, A.M.; SYFCHUK, P.-P.; GRAFUTKO, L.Ya. I- rec--F High-speed or i_ng_`d`evICa. VOP. rasch. i konstr. elektron. vych. mash. no.1:123-4311 160. (MIRA 14:1) Plectroni~_- calculating machines-Input-output equipment) Wall- panels for.imdusstri~zl buj-!dJngs with an increased teippera- ture and humidity -regime. Prom.stroi. 4-1 no.9.21--24 S 163. (14UU 16:11) SYPE, L. f Conveni~,-nt mothod of decarbwqlation of acids. Wiad chen 17 no.10: 598 0 '63. SYPER, I. New synthesis of ures, and its derivatives. Wiad chem 16 no.8: 520-521 Ag 162. BOBRANSKI B.; PRELIM, D.; LYPER, L , WOSTOWSKI R. On the isomerisation of 5-aUY:L-5-((? -bydroxvpropyl) barbituric acid. Bul chim PAN 8 no.9:475-479 60. 1. Department of Pharmaceutical Chemistryp School of Medicine,, Wroclaw. (Isomerism) (Allyl group) (Hydroxy group) (Propyl) (Barbiturie acid) BOBRANSKI, Bogmelaw; SYPER, Ludwik Studies of the metabolism of 5-allyl-5-(-4 -hydroxypropyl)-barbituric acid in the humn body. Arch. imm . ter. dosw. 9 no.41579-591 161. 1. Department of Pharmaceutical Chemistry, School of Medicine, Wroclaw Department of Drug Synthesis, Institute of Immunology and Experimental Therapy, YoUoh Academy of Sciences, Wz,oclaw. (BARBITURATES metab) SURNAI~2,, Given Nivabs Country: Poland Academic Degrees-,,5ot give117 gresumed7Ludwik Hirszfeld Institute of Ininunology and Experi- Affiliation: mental Ther9-PY-(TXT5-t-Ytut Immunologii i Terapij Doswiadezalnej im. Ludwika Hirszfelda)l Polish Academy of Sciences (PAN--Polsk ISM= Akademia Nauk), Wroclaw; Directors Prof. Stefan SWFEK, Dr. gjaigFes Warsaw, Postepy HigienX I Medygyny DosviadcZalneit Vol XV, No 4, 1961, pp 397-399. Datas "On the Isomerization of the 5-Allyl-5-(P-Hydroxypropyl)-Barbituric Acid." English abstract of article, originally published in Bull L'Acad Polon Sci Serie des Sciences Chimiquesp 1960) 81 475. Authors; BOBRANSKI B. -PRE-', I -IC Z s 'LE, R,-L- - A new general method of obtaining B-lactones. 267-268 Wiad chen 16 no. 1-:267-268 Ap 62. - . . SYPER, L. I Chranatographic purification of benzene from thiophene. Wiad chem 16 no. 4:268 Ap 62. BOBRANSKI, Boguslaw; KONIECZNY, Mieezyslaw; SYPER.'.-Ludwik::%. Investigations on the mechanism of the degradation of 5-allyl- 5-( A -bydroxypropyl)-barbituric acid in the organism. Metabolism of 1-mothyl-5-allyl-5-( A -hydroxypropyl)-barbi- turic acids in the organism of rabbits. Arch. immun. ther. exp. 10 no.4:811-817 162. 1. Depart' ment of Drug Synthesis, Ingtit tute of Immunology and Experimental Therapy, Polish Academy of Sciences, Wroclaw; Department of Pharmaceutical Chemistry, School of Medicine, Wroclaw. (BARBITURATES) (METABOLISM) (URINE) (CHRCKATOGRAPHY) SYPEIR, L, Total synthesis of the coenzyme A. Wiad chem 16 no.6t 394-399 Je 162.