SCIENTIFIC ABSTRACT TKACHEV, R.A. - TKACHEV, V.D.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001755920015-6
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: July 16, 2001
• Sequence Number: 15
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

TKACHRV, R.A.
Physiop-athology of aphasic disorders in vascular deseaseg of the
brain. Zhur.nevr. i polkh. 55 no.6:422-429 '55. (MIRA 8:8)
1. Inatitut nevrologit ANN SWR (dir.-prof. N.V. Konovalov)
(BRAIN, blood supplv
vase.disord.cauainp, aphasia)
(APRUIA, etiology and pathegenesis
brain vasc.die.)

TKACHEV, R.A., BEN, X.S.; PLMNIKOYA. I.Ya.
Some aspects of restorative therapy in aphasias of vascular origin.
Zhur. nevr. i PBM. 55 no. 12:934-939 155. (MLRA 9:2)
1. Iz Instituta nevrologii (dir.-prof. N.V. Konovalov) AMN SSSR.
(APHASIA, therapy)

TKACHXV, R.A.
NPrevention of hypertension and atherosclerosis.* R.K.Bogolepav,
A.A.Rastvorova. Reviewed by R.A.Tkachev. Zhur.nevr. i paikh. 56
no-5:435 156. (KIRA 9:8)
(HYPIRTRUSION) (ARTERIOSOLMOSIS)
(BOGOLSPOV, N.K.) (RASTVOROVA, A.A.)

ALEKSANDROVA, L.I., red.; TKACHEV, R.- A., rod.; GOTOVTS-vV, P.I., red.;
BOGACENVA, Z,I:P'Ii -.red.
[Problems of the pathogenesla, clinical aspects, and treatment
of neuroses] Voprosy patogeneza, kliniki i lecheniia nevrozov.
Pod red. L.I.Aloksandrovoi i R.A.Tkacheva. Moskva, Gos.izd-vo
med.lit-ry Medgiz. 1958. 204 p. (MIRA 13:1)
1. Akademiya meditsinskikh nauk SSSITI, Moscow. Institut nevrologii.
C~
OMMOSSS)

TYj,,OIL,5'V, R.A., lawd.mad.nniik; ALBKWIDROVA, L.I., kand.med.nauk; FROIGIOROVA, X.S.,
E;g -, - -
"
I nn '.'med.nauk
Hypertensive cerebral crises. Vest.AIGI SSSR 14 no.7:22-29
'59- (MIRA 12:9)
1. Institut novrologli ATT 3381t.
(BU111 blood supply)
(HMUIT-ANSION cormlications)

TKACM, R.A.; AIZKSAIMROVA, L.I.; FROKHOROVA, B.S.
Intravenous use of papaverine in wute disorders of brain blood
circulation. Sov.med. 23 no.10:106-109 0 159. (KIRA l3r2)
1. 1z Institute, nevrologii (direlctor - deyatvitelluyy chlen AMN SSSH
Prof. N.V. Konovalov) AMN SSSR.
(HYFERTENSION compl.)
(BRAIN blood supp17)
(PAPAVERINE tber.)

n.
no
ri, tv o AlQ1 SSSR

DAVIDENKOV, S.N.[deceased], otv. red.; KRONDKARIAN, O.A., zam.
red.; GRASHCHENKOV, N.I., red.; MANIKOVSKIY, B.N., red.;
MARKUP D.A., red.; MOROZOV, G.V., red.; TKA
red.; TRIUMFOV, A.V., red.; FEDOTOV, -i-~N
Lij 13.
. ; D
B.I., red.; SEMENUVA, K.A., red.; BOGDANOVICH, L.A.,
tekhn. red.
[Problems of neuropathology] Problemy nevropatologii;
nauchnye trudy. Moskva, 1963. 323 p. (MIRA 1618)
1. Vserossiyskoye nauchnoye obshchestvo nevropatologov
i psikhiatrov.
(NEUROPATHOLOGY)

TKACHEV, R.A.; ALEKSANDROVA, L.I.~ PROKHOROVA, E.S.
Prognosis in hypertensive cerebral crises. Zhur.nevr.i psikh.
62 no.8:1343-1248 Ag 162. (MW 15:12)
1. Institut nevrologii (dir. - prof. N.V.Konovalov) AMN SSSR,
Moskva.
(CEREBROVASCUIAR DISEASE) (HTFERTENSION)

TKACREV., R. A.; ALEKSANDROVA, L. I.; PROMOROVA, E. S.
Hypertonic cerebral crises. Nauch. trudy Inst. nevr. AM11 SSSR
no.1:35-43 '60. (MIRA 15:7)
1. Institut nevrologii AMN SSSR.
(CMBROVASCULAR DISEASE) (HYPERTENSION)

S1.111IDT, Ye.V., red.; TKACMI, -',L.A., red.; KUK.1rdEV., L.A., red.;
1,111RONOVA, Lx: I ~te ' ~.re~ ~-
[Problems in the clinical aspects and pathophysiology of
aphasia]lnstitut nevrologii. Voprosy kliniki i patofizio-
logii afazii. Pod red. E.V.Shmidta i R.A.Tkacheva. lio-
skva, Iledgiz, 1961. 175 P. (MIRA 15:10)
1. AkaderJya meditsinskikh nauk SSSR, Moscow. Institut nevro-
logii.
(APHASIA)

TNACHEV, R.A.; KRYSHOVA, N.A.; BEYNP E.3.
Symposim on asphasia in Bucharest. Vest. Al-Ill SSSR 16 no.6:6$-68
161, -15:1)
(APHASIA-CONGMSES)

TKACHEV, R-Ya.
Inadequacies in the instructi,,)n for determininp the capacity of
canning and preserving plants. Kons. i ov. prom. 16 no-9:33-35
s 161. (MIRA 14:8)
1. Krasnodarskiy sovnarkhoz.
(Canning. industry)
4

..' , , ~11 -- ~r ~.- `4-:"~ i~"-- 1 .7, "1."
II. "0 ; "
TKACHEV, ILA* , I
Etiology and pathogenesis of transitory disorders of cerebral
blood circulation. Vent. AMN S33R 16 no.10:35-41 161. (MIRA ll,:Jl)
(CEFEMVASCUIAR DISEASES). - .
. I -r- -

TKACHENKO, N.N.; CHIZHOV, S.T.; MESHCHEROV, E.T.; IXAC~~V R.Ya.;
DANlLOV, V.P.; KURZINA, I.A., red.; PROKOPY&VA,~L.B.,
tekhn. red.
(Cucumbers) Ogurtsy. [B]N.N.Tkachenko i dr. M6skva., Sell-
khozizdat, 1963. 205 p. (MIRA 16:5)
(Cucumbers)

TKAGREV,...R.-Y-a..; lUZIE,9TNIK6V) A.F., kand. toldin. naukp retsonzont;
YASTREBOV, S.M., inzh., retsenzent; KOVAMEVSKAYA, A.I.,
red.; SATARGVA, A.M., takhn. red.
[Deep-frying of vegetables and fish in ca=ing]Obzharka ovo-
shchei i ryby pri proizvodstve konservov. Moskva, Pishche-
promizdat, '1961.. 89 p. (MIRA 15;11)
(Canning and preserving)

TKACHE;V, R.Ya.
The workers of the canning industry of Kuban struggle for the
fulfillment of the resolutions of the 22d Congress of the C.PSU.
Kon.i ov.prom. 17 no.11:4-7 N 162. (MIRA 15:11)
1. Upravleniye promyshlennosti prodovol'stvennykh tovarav
Krasnodarskogo soveta narodnogo khozyaystva.
(Kuban--Canning industry)

TKACHEV9 R.Ya,
Shortcomings of a brochure. Kons.i ov.prom.
m- 163.,
(Canning and preserving)
16 n0.3:1,6-,+7
(MIRA 14:3)

(7 ge of vegetables in barrels.9 By D.H. Shilenko,
G.A. Gladkikh, S.A. BelaBhev. Reviewed by R. IA. Tkachev. Kons.j
ov.prom. 16 no,4:41-42 Ap 161. (MIRA 14:3)
(Ve tables-Storaie)
(Shilenko2 D.M.)rG!:d1r41rh p G.A. (Belashev, S.A.)

JWIIEV, II.Ye'.
"Home pickling, preserving and marinating" by I.N.Rashchenko.
Reviewed by R.IA.Tkachev, Kons,i ov.prom. 18 no.1'.39-40
Ja 963. (MIRA 16s2)
preserving) (Ratifichenko, I.N.)
(Canning and

MACHEY, R-Ya-
For a better quality of 2snuals on the prooervatlon of food at
home. Kons-i ov. Prom. 15 no.6t45-44 je 16o. (MIU 13:9)
(Food-Neservation)

TKACHN, Roman Yakovlevich,; SAVZDARG, V.E-. rad.; WMICH, M.M., tekhn. red.
collective farms] Pererabotka
[Processing fruits and vegetables on
plodov i ovoshchei v kolkhozakh. Moskva, Goa. izd-vo sellkhoz.
lit-ry, 1958. 174 P. (MIRA 11:11)
(Canning and preserving)

T#kovlevio.4 NAMESTNIKOV, A.F.., opets.red.,-
Rpm
YMHNWW:v~; red.4.KISINA, Yo.I., tekhn. red.
(F,quipment for canning green peas] Oborudovanie dlia
konservirovaniia selenogo goroshka. Moskyaq Pishche-
promizdat, 1963. U8 p. (MIRA 16t7)
(Peao, CAnned)

TKACHEV, S.
M-17f' sirrIgre Trotor Mo!71-vrk, Goc. imer. izrl-ro, 191~"). 10~: p.
TL7 02/~. 1415,15

TKACHEV, S., brigadir montazhnikov, zasluzhennyy stroitell RSFSR
Two frames simultaneously. Na stroi.Ros. 3 no.8:3-4 Ag 162.
(MIRA 15:12)
1. Kuznetsovskiy domostroitellnyy kombinat, Leningra4.
(Leningrad-Construction industry)

Tlekotorye svoistva dreve3nvkh materialov v razlichnykh napravleniiakh
otnosi-tellno volokon. (Tekhnika vozdushnnf,,o flotua, 1946, no. 7,
P. 15-23., llll)!3.) tables, din!-rs.)
Title tr.: Sone Drom-rties of uooden matrxials wif,11 relation to ty;p,
r1lirection of the [-rain.
TLLI~04.'Ph 19h6
SO: Aeronutical Sciences and Aviation in the Soviet Unio , Librax-f
of Congress, 1955

SEKT, P.Ye.; TKACHEV, S.F.; LEVIN, S.A.; ALENINA, M.T.; BARANNIK, A.G.
Analyzing the cost indices on the flotation process. K(~B i khin.
no,9%53-56 163, (MIRA 16:9)
1. Kharlkovskiy inzhenerno-eko.-iomicheskiy institut.
(Coal preparation plants--Costs)
I-

SEKT, P.Ye.; TISLFMO, F.F.: LEVIN, S.A.; MCHXV, S.F.; Z&SHKVARA,
Y.G.; TOPORKOV, V.Ya.; BELIKOV, A.R.
Location as a factor affecting the economic indices pertaining
to the operation of coking coal cleaning plants of the Donets
Basin. Koks i kbim. no.2:53-56 160. (MIRA 130)
1. Kharlkovskiy inzhenerno-ekonomicheskiy institut (Sekt. Tealenko,
Levin, Tkacbov). 2. Ukrainekly nauchno-lesledovatellakiy uglekbi-
micheekly inatitut (for Zaobkvara, Topork-ov). 3. Ukrnilugleoboga-
sbcheniye (for Belikov).
(Coal preparation)

TKACHEV, S.F., kand.ekon.nauk
Economic indices of the various stages of coal preparation. Ugoll
Mr. no.6:38-39 Je 160. ('~UA 13:7)
1. KharIkovskiy inzhenerno-ekonomicheskiy institut.
(Coal preparation--Accounting)

TXACHZV, S.F., kand.ekonom.nauk
Technical and economic effectiveness of the adoption of
pyrite roasting in a fluidized bed. Xhim.prom. no-3:
221-222 Ap4ty 160. (MMA 13 t 8)
1. KharIkovskiy inzhenerno-okonomicheakiy inatitut.
(Pyrites) (Fluidization)

TXACHEV. S.F., TESLWKO, F.F.
Unifying the system of stock taking and accounting at coal-
cleaning plants. Koko i khim. no.6:51-54 160. (MM 13:7)
1. Xharikovskiy inzhanerno-ekoaomicheakiy institut.
(Coal preparatioa--Accounting)

SIR, P.Ya.; TESLIIVKO, F.F.; BELIKDV, A.M.; TKACHEV, S.F..
Iconomic aspects of using Donato Basin gas coals for the production of
blast furnace coke. Ugoll 34 no.1:20-23 Ja '59. (MIRA 12:1)
1.Xharikovakiy inzhonerno-skonomichookiy institut.
(Donate Basin--Coal) (Coke)

TRACHEVY Sergey Ivanovich
[Development ofinterfarm cooperation in Kazakhstan] FAZ-
vitie.mezhkolkhoznykh proizvodstvennykh sviazei v Ka-
zakhstane. Alma-Ata, Kazakhskoe gos.izd-vo, 1963. 98 P.
(MIRA 16:9)
(Kazakhstan--Collective farms--Interf&rm cooperation)

TKACHENKO, A.P., Inzh.- KRASOVSKIY Yu.P., inzh.; TKAGHEV, S.I., inzh.
Shape of explosion (,,raters and delay intervals Jm blasting high
benches. Shakht. strai. 8 no.10:8-9 0 164. (MIRA 1~:12)
1. KrIvorozhskly gornorudryy institut (for Tkachenko, Tkachev).
2. Nauchno-~ssledovatellskiy gornorudnyy institut, Krivoy Rog
(for Krasovskiy).
r-z

KITACH, G.M., dotsento kand. tekhn. nauk; TKACHEV, S.I., gornyy Inzh.
Crushing of rocks in short-delay blasting using charges with
air spaces in open-pit mines. Vzryv. delo no.53/10:171-177 163.
(MMA 16:8)
1. K~ivorozhskly gornorudnyy institut (for Kitach, Tkachev).
(Krivoy Rog Basin--Blasting)

gap -
62.
n, - t
npp - In 7"
T I'k

, ",~ __ ; 1x,_ V , ~ - T-1, .
"On the theory and computption of an elew-tor with contour scrapers," Tnidy Azovo-Chernoiaor.
in-ta mekhanize-taii sel. '~::hoz-va, IE,'Ue -,'), 1948, P- 43-81
SO; U-3850, 16 June 53 (Letopis lZhurna.1 Iny!d-, Statej, I-To - 5, 1949) -

.Q,LKIN, Ya.Z SKIRNOV9 M.P.; SMGIYENKO; V.Ya.; KOZRM
TIKOVAI G.I.;
KALNA'r, Ye.l.; TARKHOF7., H.Gs, Prinimali uchastiye, IVRSAITOV2 n.1.;
v
ABDUGAPAROV, BOVGUTA., I.D.; TKACIIEV-~ ScP&; FIIJ,.TIOV~, N.V.;
SVISTELIIIIKOV~ A.M.) PRACHEVp V.NS;
,~ii6 I.; ANTROPOV., A.D.;
SOBOLEV, Ye.D.; POPOVAg N.T.
Industrial testing of a new corft-1-nao-as method of copper removal
from crude lead. TSvet. met. 34 no.,'~;15-,22 bir 161. (MERA 1401)
1. Eksperimentalinyy tsekh Chimkentskogc, "Intsovogo zavoda (for
ALrsaitov2 Abdugaparov-, Bovguta2 Tkachev., Filatov) Svistellnikovp
Prachev2 Sheymanp Antropovq Sobolevq Popova),
(Lead-YletaIlurgy) (Copper)

LEVIKOV9, Isis., inzh.; MAMov, A.A. . inzh.; TKAcHEV) Sasap_~nzh_
"Rules for the technical operation Of sinking hoiStS,Pt ReVij.~U-E:d
by I.I.Levikovo A.A*Ixarkov, S.S*Tkachev. Shakht.stroi. 6
no*4.31-32 AD 162. (141M 15-4)
.(kne hoisting-Safety measures)

TY-LCHBV, S.Te.
~, 2.
Local application of penicillin in polyclinical practice in
certain acute inflawn-atory processes. Sovet.vrach.sborn. no.11~1:
14-18 Ag 149. (GIML 19:2)
1. Moscow.

TKACHEV,S.N.
Problem of the therapy of bydradenitio. Vest.vener. NO.1:56-58 Jan-
Fab 51. (CLML 20:6)
1. Candidate Medical Sciences, Lt-Col Medical Corps. 2. Of the Cen-
tral Red Banner Military Hospital imani I.Y. Mandryk- 3. Comparison
of treatment with penicillin and sulfamides.

TKAGfP;,V_,3., and N. KASIIANOV.
A.viatsionnyi motor Mr-17f; orisanie i rukovodstvo po obsluzb-ivaniiu. Pod red. A.
Ustalova. Mosl-va, Gos. voen. izd-vo, 1936. 105 P., illus., diagrs.
Title tr.: M-17f aircraft engine; description and maintenance instructions.
TL703.1,115T5
SO: Aeronautical Sciences and Aviation in the Soviet Union, Library of Congress,
1955.

TKACHZV, S. E.; NEDOSHIVINk, 11. 1.
1--,_ ~ .. . .. ....... --- -r -
Tissue therapy. Med. sestra, Moskva no. 12:16-18 Dec. 1951.
(CLUL 21:3)
1. Tkachev is a Candidate Medical Sciences and Nodoshivina is
a senior operating nuree (Moscow).

TKAGHEV, Semen Ivanovich; LEPIN, A.B., red.; ONO.EMXO, N.G., tekhn.red.
[Speed up the construction of high-quality buildings] Stroitt
bystro i dobrotno! Leningrad, Lenizdat, 1960. 31 p.
(MIRA 13:11)
1. Brigadir komplekenoy brigady 4-go domostroitellnogo kombinata
Leningrada (for Tkachev).
(Leningrad--Construction industry)

SEKT, P.Ye.; TESLEMD, H.Fo; TXACHEV, S.F.; LEVIN, S.A.; KMMSOV. Ye.G.
Technical and economic indices of the operation of the drying units
for dewatering concentrated coals in the Donets R-tsin. Koko i khim.
no.9:47-50 160. (MMA 13:9) 1,
1. KharIkovskiy inzhenerno-elxonomichookiy institut (for Sekt, Teelenko,
Tkachev, Levin). 2. Stalineldy sovanrkhoz (for Kuznotoov).
(Donets Baain-Coal-Drying) (Coal preparation)

BUTENKO, Yu.T., inzh.; KRASOVSKIY, Yu.P., inzh.; TKAG EV, S.I., inzh.;
TKACHENKO, A.P., inzh.
Signal for high-speed photography In flame detonation. Met.j
gornorud.prom. no.5:84 3-0 162. (KRA 16:1)
(Detonation) (Photography-, High-speed)

KOVALEVA, K.F,, glav. red.; IGNATOV, S.A., red.; TUSHUNOV, A.V., red.;
TKACHEVI A.I._, red.; MATSUK, R.V., red.; NAUMOV, K.M.., tekhn.
ie-d. -
(Problems of agricultural economics at the present-day stage]
Vopropy ekonomiki seltskogo khoziaistva na sovremennom etape.
Moskva, Izd-vo VPSh i AON pri TsK KPSS, 1963. 174 p.
(MIRA 16:6)
1. Akademiya obshchestvennykh nauk.. Moscow.
(Agricultura-Economic aspects)

Tkachev, S.M., kandidat tekhnicheskikh nauk.
Effect of play on the accurate positioning of a working part of a
mechanism. Sellkhozmashina no-3:10-12 Mr '57. (MLRA 10:5)
(Machinery)

TKAGIEV S 14 kud.tekhn.nauk, dotsent
Kinematic errors of mech-animm with gaps. Vest.maEh. 41 no.11:
42-46 11 161. (MIRA 14:11)
(Machinery, Kinematics of)

LEVIKOV, I.I., inzh.; MARKOV. A.A., inzh.; TKACHEV.4-SOSS, lnzh.
FaLles for using hoists in 0
Btroi, 5 no.4.-33 inking vertica.1 mine shafts. Shakht"
Ap ,6i. 4
(Shatt sinking) (Mine hoisting-Safety measures) (MIRA 24:5)

USSRA4edicine - Penicillin Dee 51
"Treatment of Acute Inflanmatory Diseases With
Penicillin Injections Into the Focus," S. Ye.
Tkachev, Cand Med Sci
"Fel'dsher i Akusherka" No 12, pp le-20
Tkachev reports on the work done by various au-
thors beside himself on treating many acute in-
f1ammatory processes, such as carbuticles, mas-
titis, paronychia, hidradenitis, and abcesses in
various stages of inflammation by injecting, in-to
the focus, doses of 50,000 to 4oo,ooo units of
USSR/Medicine - Penicillin (Contd) Dee 51
penicillin in combination vith novocain. ie
recommends application of penicillin by this
method in such cases in general practice.

TKACn,V, s. ye.
Penicillin
F
Rules for the administration of penicillin., Felld.' i akush., no. 1, 1952
Kandidat Meditsinskikh Nauk
g2ath& List of auspian Accessionr -o il 1952. TP--TCLAssjFji;D.
, Librar7 of Congress, A-r

T Y !, 0 " -'- IV ~ ~ I 'f P- -
'rl"
'ho i
11~',Ovicj "Ierearch oil PonLcillin DenOt L't '-
- a
,~10 ]. Jail 10,52 w-,-:;-5"j5

TXACHIV, S.Te.
Pe nicillin reserve in the organism. Yelldsher & akush., Moskva Ho.l:
12-13 Jan 52. (CLML 21:4)
1. Candidate Medical Sciences.

IMUFIEV., S. t.
Nurses and Nursing
NO 11 Pir090V and the first nurses; 70th anniversary of PIMOVIrs death.
Made Bestra no. 2, 1952.
it Rthl List 2f- RR~Lsian Accessionsj, Library of C'ongresso April 1952. UNcLASSIFIED.

TKACHO, S.Te.
- t-., "! PainI,ess, i-njections. Felldsher & akash., Moskva no. 7:38-39 July
1952. (CLKL 22:5)
1. Candidate Medical Sciences.

TKACHEV, S.Ye.
I.. ....
Panaritium and its therapy. Vest khir. Moskva 72 no. 5:60-65 Sept-
Oct 1952, (GIML 230)
1, Candidate Medical Sciences.

TXLGHEV, S.Ye.
I . . . 1 -1. -1 1 ~ -
Shook dose penicillin therapy of mastitis. Akuah. gin. no. 1:85-86
Jan-Feb 1953. (CIML 24:2)
16* Candidate Medical Scienc*B. 2. Moscow.

TXACHIV,S.Te., kandidat meditsinskikh nauk (Moscow)
Complications in synthomycin therapy. Felld. i nkush. no.10:13-14
0 '55. (MLRA 8:12)
(OILMMYCIT IN )

TKWIW. S.Ye.. kandidat meditsinBk1kh nauk (Moscow).
local Injection of penicillin. Felld.i skush. no.10:30-33 0 '33.
(NLRA 6:10)
(Penicillin)

TKAGEMV, S.Ye., kandidat maditsinskilch nauk (Moskva)
%mauldmomm
Biomycin in medicine. Felld. t akush. no.1:16-21 -TrA. 155. (HLRA 8:3)
(ARTIBIOTICS,
bioaqcin)

TKA.CHEV, S.Ye., kandidat meclitsinakikh nauk (Moskva)
Tweat7-stxth All-Union Congress of Surgeons. Feltd.i akush. no-5'
47-53 MY '55. (KIBA 8:7)
(SURGERY
conf.~

/I
.1, ,
TKAGHRV, S.Yool polkoynik moditsinskoy oluthby, kondidnt moditainskikh nauk
~ -
Treating paronychia. Voene-medozhur. no*7:84 Jl 156. (V-LRA 9-11)
(FBLON (DISEASE))

TXILCHEY. S.Ye., kandidat meditSinBkikh nauk (Moskva)
, -
Treatment of hemorrhoid exacerbations with Shostakovskii's balsam.
Yelld. i akush. 21 no.3:30-32 Mr 156. (MIaA 9:7)
"(HEMOMEOIDS) (ETHERS)

TXACHEV. S.Ye., kandidat meditsinskikh nauk (Moskva)
~~ '-b
~, . - .1 ~On the problem of complications in penicillin therapy. Yelld. L akush.
21 no,11:12-16 H 156. (KLRA 9:12)
(PINIGIILIN)

,~,TKACHFV
-,
Treating cortAin InflnWatiOn8 Of the anal opening with vinylin
(Shostakovskii'a balaam). Novkhir.arkh. no.1:69 JTa-F 158
(MIRA 11:11)
1; Vtoraya moskovskaya tsentrallnaya paklinika,
(ANUS--DISEASF,S)
(ETHM)

TKACM , S.Ye -.,.polkovnik med. sluzhby, kand.med.nauk
Blind auture in treating ougourntive atheromes and other inflamations.
Voen.med.shur. no.3: Mr 057. (MIRA 11:3)
(SKIN--TM40RS) (BUTUREPS)

TXACHEV, S.Ye.
Topographic administration of penicillin. Felldsher & akush. no.10:
30-33 Oct 1933. (CLML 25:4)
1. Candic~ate Medical Sciences. 2. Moscow.

TKACHEV, S.Ye.,kandidat maditsinakikh nauk (Moskva)
, - ',V- -
Testing sensitivity to antibiotics. Klin. med. 35 no.2.-152-153
F '57 WaA 10:4)
(ANTIBICYrICS, eff.
agnsitivity, determ., skin test)

T I _ : , -,
.. -. ", _ , I
TKACaV, Ma., ~rof.
""
Increasing necessitr. Sov.zdrav. 16 no.12:46-47 D '57. (MIRA 11:1)
1. Iz Voronezhokogo meditsinnkogo institute (dir. - prof. 11.1.
Odnoralov)
(PUBLIC HEALTH, educ.
in Russia, recommendations for change (Rue))

TKACHXV, T.Ya., prof.
Man of science and medicine from NizhniY Roygorod." Reviewed by
TjIA. Tkachev. Sov,xdrav. 18 no,11:59-60 159. (MM 13:3)
(GMIY-Mr"TISTS)

TKACHICV, T.Ya., prof. (Voronezh).
Problems in teaching medical history. Sov. zdrav. 18 no.2134-38 '59-
-(RlsTORY, MMICAL, adac. (MIRA 12:1)
(RUG))

TKACHEV, T.Ya., prof. (Voronezh)
Scientific-atheistic propaganda in a higher medical school. Sov.
zdrav. 20 no.1:46-4-9 161. MRA 14: 5)
(MEDICINE-STUDY AND TEACHING) (RELIGION)

TYACIIEV, T.Ya.
O%t!~
Z. P. Solovlev, 75th anniversary of birth. Sovet. mad. no.11:35-36
Nov 1951. (CUL 21:2)
1. Professor. 2. Voronezh.

14(1)
SOV/66-59-3-29/31
AUTHOR: Tkachev, V.
TITLE: Heat Transfer in Wire and Tube Condensers /Prom foreign publications/
PERIODICAL: Kholodil1naya tekhnika, 1959, Nr 3, PP 75 - 76 (USSR)
ABSTRACT: Issues Nr _3 and Nr 9 of the Journal "Refrigerating Engineering", 1957,
contained articles pertaining to wire and tube condensers. The article
discusses the design, applications and merits of this type of condensers;
it also develops formulae for calculating heat transfer.
There are; 1 graph, 1 diagram and 4 refe-rences, of which 2 are Soviet and
2 English.
Card 1/1

/1) c )y
85-58-6-30/43
AUTHORS: Tkachev,=V., Vartanov,, V... Vasilyan, I., Lagunov, V.,
Lobzhanidze., Z., Guruli, M. (Tbilisi)
TITLE: Tbilisi Model-airplane Builders Need a Field for Flying Cord-
controlled Models (Thiliaskim aviamodelistam nuzhen kortodrom)
PERIODICAL: Kz7llya rodiny, 1958, Nr 6, p 24 (USSR)
ABSTRACT: The authors urge the construction of a field for flying
cord-controlled airplane models in Tbilisi.
1 0' Airplanes-Model building
Card 1/1

GRIDNEV, S.; MWHSVj V.
Develop equipment for open electric power stations. NTO 4
mosSOZ-34 Ag 162. (KIIU 15:8)
1. Direktor Rostovskogo otdoleniya Vassoyusnogo gosudarstvannogo
proyektnogo institute. stroitallstva slaktrootantsiy, predeedatell
soveta'Nauohno-tekhnicheskogo obahchostva onergetichaskoy proqr-
ahlsnnost~ (for Gridnev). 2. Glavnyy inah. Rostovskogo
otdoleniya~~s9so.yuznogo gosudarstvennogo proyaktnogo instituta
atroitelletva elektrostantdy, zameAitell predoedatelya saveta
Nauchno-takhnicheakogo obahchestva anergetichaskoy promvahlonnosti
(for Tkachev).
(Electric power plants) ,f.

88(a6
S/170/60/003/012/013/015-
9,-325-0 ~IIV3 j /1,57q, J351) B010056
AUTHORS: Nokraahevich, 1. G., Goller, I. Kh.p Tkan "6-~
TITLE: Galvanic Effects in Selenium Rectifier Elements
PERIODICAL: Inzhenerno-fizicheskiy zhurnal, 1960, Vol. 3, No. 12,
PP- 114-116
TEXT: The authors investigated the effect produced by moisture upon
selenium rectifiers. In several experimental series, the behavior of the
elements in moist and dry air was investigated. The results indicate
that by the air moisture in the elements a galvanic EXF is formed, which
is produced by the forming of galvanic couples between the lower and the
upper electrode and between selenium and the upper electrode. These two
couples act within a closed circle of a rectifier element in an opposite
direction. These galvanic effects and their ohanges with a change of the
moisture penetrating into the element from outside are considered to be
causes of the fluctuations of the return current and of the destruction
of selenium rectifier elements. There are 3 figures and 2 tables.
Card 1/2

M6
Galvanic Effects in Seleniuii
Rectifier Elements
S/17o/6o/oo3/o!2/01.',/015
B019/BO56
ASSOCIATION; Belorusskiy gosudars'vennyy universitet im. V. T
1. - Lenina,
g. Minsk (Belorussian State University imeni V. I. Lenin,
Minsk)
SUBMITTED: January 22, 1960
Card 2/2

TKACHEV, V.D.; IDGINOVp A.S.
Gases in the blood in cirrhosis of the liver and chronic hepatitis.
Terap.arkh. no.6:17-21 162. (14IRA 15:9)
1. Iz Tmatituta, terapii (dir. - deystvitelInyy chlen VW SSSR
prof. A L. Myunikov) ANN SSSR.
MVER-DISEASES) (BWOD, GASES IN)

TKACHEV,-,V.D.
Disorders of blood coagulation in liver diseases.
Akt.vop.pat.pech. no.3:136-146 165.
(MIRA 18:11)

44168
S/181/62/004/012/015/052
B104/B102
;~4
AUTHORS: Vavilov, V.S., Plotnikov,'A.F., and Tkachev, V.D.
TITLE: Invebtigating structural defects in silicon single
crystals by reference to the photoconductivity
PERIODICAL: Fizika tverdogo tela, v. 4, no- 12, 1962, 3446-3454
TEXT: The photoconductivity spectra of p-,and n-type Si single crystals-
Y,ith different oxygen, boron, and phosphorus concentrations, irradiated
'by electrons (-I lmev) from the electrostatic generator of the Laboratorta
izik' polu:)rovodnikoy (Laboratory of the Physics of Semiconductors)
.of the FIAN at 100 and 300K, were investigated with a recording
spectrometer designed on the basis of the v1KC -12 (IKS-12) monochromator.
The specimens were plates (15-2.5-0.8 mm)'with palladium contacts
(p-type specimens) or with zinc contacts (n-type specimens). Results:
Irradiation leads to the appearance of a large number of discrete levels
in the forbidden band. The dependence of the shape of the photo-
conductivity spectru-m on the position of the Fermi level, which is
related to the excitation of electrons on the different levels, shows
Card 1/3

S/181/62/004/012/015/052
Investigating structural defects ... Bl04/BlO2
that all levels (Fig. 11) can be related to defects. The higher
sensitivity of photoelectric measurements as compared with electric
measurements made it possible to prove the existence of a series of
centers with different ionization energies. In Si single crystals,
irradiation by neutrons produces the a,me defects an'by electrons. The
radiation defects which determine the photocondiictivity spectrum of Si
in the range of 2 to 6 [L, are not Frenkell defects. Irradiations at
1000K showed that at room temperature not only simple Frenkell defects
exist, but also associations of these with other types of defects. This
makes it possible to study how such associations are formed and to
determine the characteristics of defect diffusion. Electrically active
impurities (Cu, Au) with concentrations of loll to 1012 cm-3 could be
identified by studying'photoconductivity spectra. There are 12 figures.
ASSOCIATION; Fizicheskiy instiiut im. P.N. Lebedeva All SSSR Moskva.
(Physics Institute imeni P.N. Lebedev AS USSR, Moscow)
SUBMITTED: July 6, 1962
Card 2/3

hhl?7
S/181/62/004/012/031/052
0"
B125/BIO2
4UTHORS: Plotnikov, A. F., Tkachev ~V._. D.,' and Vavilov, V. S.
TITLE: The photoconductivity spectra of monocrystals related with
residual impurities
PERIODICAL: Fizika tverdogo tela, v- 4, no- 12, 1962, 3575-3577
TEXT: The photoconductivity spectra of silicon monocrystals N"1000 ohm-CM)
were examined at 1000K at constant and alternating excitatj.on'~modulating
frequency of the light 9 cps). The crystals were either produced by
zone melting in vacuo or were grown in quartz-orucibles. The measuring
apparatus, described by A. F. Plotnikov et al (PTE P3, 1962) recorded
variations in the dark conductivity up to-10-16. The A-dependences of the
relative change A a/aI in the photoconductivity of p-type silicon
monocrystals of 500 and 75 ohm-cm, have the same step,-like form. I is the
intensity of the exciting light. The photoconductivity beyond 3.2 g may
be related with the known donor level of gold which lies 0-35 ev above
the v-band. This level is due to centers whose concentrations vary between
10 11 -3
10 and 10 cm . This concentration of monocrystals produced in quartz
Card 113 0 51IM119Z160010-3164210419

sli a 1 /62/004/012/031/052
The photoconductivity spectra ... B125/B102
dishes is higher by one order of magnitude than that of silicon produced
by vertical zone melting in vacuo. The level at 1.8 p corresponds to
bipolar excitation, the level at 2.2 g corresponds to the acceptor level
lying 0.54 ev below the bottom of the c-band and the level 2.6 p arises
from bipolar excitation by the copper level E + 0-49 ev. In the latter
v
case, minority carriers (electrons) are excited by double optical VI
transitions to the conduction band. The level in the region 2.3 p of the
4-dependence of A a/aI is evidently due to electron excitation from the
gold level E c - 0-54 ev to the conduction band. The broader level below
2 g might be due to bipolar electron excitation through 2 leve'ls. The
shape of the spectral curves of the photoconductivity of p-type silicon
monocrystals (doped with bold up to 5*1o15 cm-3) confirms the above
assumption that the impurity photoconductivity in unalloyed Si crystals
is caused by gold atoms. In Si monocrystals produced by zone melting in
vacuo without any crucible the gold concentration is found to be
10 10 - 10 11 Cm-3 and the copper concentration 10 11 - 10 12 cm- 3. In Si
monocrystals grown in quartz crucibles or by vertical zone melting the
Card 2/3

The photoconductivity spectra
S/181 "Q62/004/012/031/052
B125/B102
residual impurities, copper and gold, produe local centers with deep
levels,in the forbidden bands. There are 3 figures.
ASSOCI ATION: Fizicheskiy insti tut im. P.. N-Lebedeva AN SSSR, Moskva
(Physics Institute imeni P. N. Lebedev AS USSR, Moscow)
SUBMITTED: juiy lo, 1962
Card 3/3

1 15556-62 EWT (1) lFor, (k)/EWT 1m,)/EDS/MC (b)-2 AFFrC/_.A5D/ZSD
PZ-4 AT/1,7P(C) -3
ACCESSIUN UM AP3003876 3/0181/6)/W5/00?/1826/1829
AUTHORSt Tkachev, V. D.; Flot4kovs A. F.; Vavilov, V. S.
TITLEs Spectra of photocanductivitoin n-type silica bombarded with hieh-speed
electrons
SOURGEs Fizika tverdogo tela, v. 5, no. 7 1963, 1826-1829
!TOPIC TAGSs photoconductivity, silica, n-t" electron, high-speed electron,
ypef
!conduction band, valence band, forbidden band, center , defect
ABSTRACT: The photoconductivity of n-type silica was studied by means of the
setup described by A. F. Plotnikov, V. S. Val4vov, and B. D. Kopy*lovskiy (PTE,
i No. 3, 183, 1962). The spectra were investigated with oscillating (modulation
!frequency of 9 cycles) and steady excitation. The samples were plates cut from
single crystals and had contacts attached at the onds. The contacts were Pd and
Zn, deposited electrolytically, The bombardment was effected with electrons of
'l Mev. The temperature of the samples during bombardment did not exceed 25-30C,
iand measurements were made at a temperature near 100K. From the measurements
~of photoconductivity the authors diagrammed the positions of energy levels in the
Card 1/7

L 155.56.-63
!ACCESSION NR: AP31003876
forbidden band*. This diagram is shown in Fig. 1 (see Enclosure 1).. The results-*
Ilike data on bombardment of p-type silica with electrons and neutrons, attest to,
[a "set" of several centers, the nature of most being as yet unexplained. The
;"radiation" origin of centers with levels at Ec -0.16s F., -0.4o, E. +0.54, and
i+0.16 ev is not questioned. These levels are starred in Fig. lo 1t is possible
ithat some of the levels are initially present in the materiali not developing anew
tbut merely appearing because of the capture of equilibrium carriers by defects arA
ibecause of favorable conditions for measuring photoconductivity in bombarded silicai
:at low temocratures. "The authors express Lhpir sincere thanks to G. N~ Qalkjo, i
V. M. Malovetskaya and Y'; aluable advice and critical remarks
kinayp for Vi
for aid in the work," Orig. art, hast
and to 17o.- M _VV=j+R-.YflREa:jj
6 figur-es*
JL39XIATION 3 Fizicheskiy institut im. P. N. Lebedeva AN 93A Moscow (Phirsical
"Institute, Acadomy of Sciences, SSSR)
ENCLs 01
SUBAITTED: 30JTan63 DATE ACQs 15Aug63
ISUB CODEs PH. NO RU SM 005 OTHERi 002 1:
.Card. 2

TKAGHEV, V.D.; PLOTNIKOV, A.F.; VAVILOV, V.S.
Nature of local centers with deer-seated levels in sili,::on
irradiated by fast electrons. Fiz. tver. tela 5 no.11:1.188-3194
N 63. (141RA 16312)
1. Fizicheskiy institut imeni Lebodeva AN SSSR, Moskva.

VAVILOV, V. S. ; TKACIIEV, V. D.~ SAVCHENKO, A. TIT.
"(in t,'.e nature of cent~.-rr; witia dlec-.p c-nervy ~evr!L~ it, ';Jillcr-';
by fast electrons."
report submitted for Symp on Radiation Damage in 'Semic.-onductors, Royauirrint,
France, 16-18 iiLl 64 .

'ACCESSION NRs AP4033646 S/0250/64/008/003/0147/0149
..:AUTHORS: Sevchenkoj, A. N*j Tkachev, Ve-D.
Kinetics of photoconductivity in n-type silicon single crystals irradiated
1by high speed electrons
SOURCE: AN BSSR. Dokladv*$ v. 8, no. 3, 1964P 147-149
;TOPIC TAGSt impurity photoconductivity# silicon single crystal, electron beam,
onduction. zone, electron concentration, relaxation curve
c
iABSTRACT: The kinetics of impurity photoconductivity in n-type silicon single
1crystals, irradiated by 1 14ev electron beam,was studied.' The investigated kinetics'
;were connected with electron transitions of Ec - 0.16, 0*26, 0929,, and.0-40 ev
:centers in the conduction zone. All measurements were made at 80K. In the analysis
;it is assumed that thermal exchange between the investigated levels and zones in
I
~negliaible. The solution of the kinatic equation is then given in the form of
(exp
.1/2
&rd

TACCESSION NR: AP4033646 .'An, &n-",Xp
where A increase in electron concentration and 'rH - growth constant. Typical
~vrelaxation curves are aven for energy level E. - 0.16 ev, obtained by Irradiating
j:the specimen to increase the Fermi level slightly higher than the given center
,!.energy level Ec. From these neasurements electron capture cross sections were
'determined for each level to an 'accuracy of 70%, Origs arte hast 7 formulas and 21
'figures.
1ASSOCIATION: Belorusskiy gosudarstvenny*y universitot im. V. I, Lanina,(Dolorussian
!State University)
SUEMITTEDs 26Doc63
1SUB CODEs SS
cw-cr*7 2/2
ENCM 00.
NO REF SOVt 004 OTHER: OW

ACCESSION ITR: LP4039,327
S/0250/64/008/004/0223/0225
AUTHORS: Tkachev, V. D.; Sevchenko, A. N.; Lugakov, P. F.
.................
TITIS: Capture of minority current carrier in n-ty pe silicon irradiated by fast
.electrons
SOURCEt AN BSSR. Doklady*j va 8, no- 4, 1964, 223-225
TOPIC TAGS: minority current ca:urier, silicon single crystal, hole type, photo-
cor.,_i,;Livity, hole capture, adhesion center, infrared radiation
ABSTIRACT: The process of minority current carrier adhesion in n-type silicon
single crjstals has been studied under high speed electron beam radiation (1 Mev):
The monocryatal was obtained by the method of vertical malt zone in vacuum, con-
taining not more than 5 X1a06 oxygen atoms per 1 cm3 as vrell as by growing it in a
quartz tti:be containing 10 oxygen atom's per cc. Nonequilibrium carriers wore
inj,_,ctcd by means of light pulses. In the case of the quartz grown oingle crystal,
holc capt-,ure -;,-as noticod clearly at low temperatures (80K) under electron bombard-
inent. pactoconductivity of this crystal is represented graphically a8,4
function of radiation time with an integrated electron current of 1.2 x 10
" ec' - -
e
A. (see Fig. 1 on the Enclosure). The figure shows that after switching
-Card V.3,

ACCESSION NR: AP4039327
on the light the conductivity increases sharply because of the generation of
nonequilibrium carriers with time durations of the order of hole lifetimes in the
monoorystal. The nonlinear rise 6C'2 may be explained by photo-hole capture
centers filled with electrons after switching on the light. The energy locations of
adhesion centers are determined from the photoconductivity changes connected with
ir,Lfrared radiation absorption. "The authors are deeply grateful to V. S. Vavilov
and A. P.,Plotnikov for their many valuable remarks, and to A. G. Litvinko and M. T.
Lappo for*their help." Orig. art. hass 2 figures.
ASSOCIATION% Belorusskiy gosudarstvenny*y universitot im. V. 1. Lonina, (Belorussian
State University)
SUBMITTEDt 25Dec63
SUB CODES SS
Card 2/3,1"
DATE ACq: 09Jun64 ENCLz 01
NO M SOVS 001 OTMS 003
%

T. 4974-66 Ei'IT(I)/EViT(m)/EPF(c)ZEPF(n),~-2/T/E'elP(t)/EVIP(b)./E~VA(c.) _ IJP(c)
ACC NR: AP5027426 SOURCE CODE- UR/0181/65/007/011/3410/3
AUTHOR: Yukhnevich, A. V.; Tkachev, V. D.
ORG: Belorussian State University im. V. 1. Lenin Minsk (Belorusskiy
gosudarstvennyy universitet)*.
TITLE- Radiative recombination in silicon containing radiative structure disloca-
tions
SOURCE: Fizika tverdogo tela, v. 7, no. 11, 1965, 3410-3412
TOPIC TAGS: electron recombination, recombination emission, recombination radiation,
crystal dislocation - 1/1 . .
ABSTRACT: An investigation was made of the recombination mechanism associated with
the structure dislocations of -the lattice over deep energy levels in the forbidden
band of silicon. To produce radiative dislocations, the specimens were i d
with &amma-guandifrom a Co 60 source with an integrated dose of 1016_102 c1mr-2.
Nonequilibrium carriers were excited by electric injection through thb diffusive
,p-n transition. The initial material had a resistivity of 2 ohm-cm. The endission
was detected with a cooled PbS detector and analyzed with an IKS-121monochromatorJ,
In addition -to the emission band close to 0.96 ev, a band was observed with a width,
I I
about 0.1 ev. it bad two emission lines with maxima of 0.478 and 0.488 ev and half- I
widths of 5 x 10~3 and 2.5 x 10-3 ev, respectively. The width of these lines and the
Card 1/2

L 4974--66
ACC NRj AP5027426
position of their maxima did not change significantly with variations of the speci-
ments temperature in a range from 65 to 130K. The form of the spectrum and tempera-~,-
ture dependences of the intensity were similar for n- and p-type specimens. The
width of 0.478 and 0.488 ev emission lines was considerably smaller than the value
of kT at the temperature of the e-xperiment, which is attributed to the localization
of the initial and end states of the electron and the hole, which participate in the
corresponding transitions. It was assumed -that these lines appear at a radiative
capture of one of the carriers from an excited state into the ground state of a de-
fect which is located at the middle of the forbidden zone of silicon. The "back-
ground" intensity decreased when the temperature was reduced from 100 to 65K. In
this temperature range, it appeared that the energy was ."pumped over" from a nonstruc-
tural background into narrow lines. The assumption that the whole emission of the
-band initiates in one center was confirmed experimentally in investigations of the
dependence of the intensity of separate band components on the integral irradiation
dose. .0rig-art. has- 2 figures. (JA]
SUB CODE: &tl 551 OSUBM DATB; l3may65/ O~IGREF: 004/ OTHIREF: 002/. ATDPUqS-
Card 2/2

ACC NR: AP600239 I SOURCE CODE: UR/OZ50/65/009/olzio8ol/0803
AUTHOR: SevchenRo, A. N.; Tkachev, V. D.; Lugakov, P. F.
ORG: Belorussian State UniversitX (Belorusskiy gosudarstvennyy universitet)
ITITLE: Bipolar mechattiorn of exciting impurity-type photoconductance
iSOURCE: AN BSSR. Doklady, v. 9. no. 12, 1965, 801-803
TOPIC TAGS: photoconductance, photoconductance excitation, semiconducto r
ABSTRACT Results are briefly I-oported of an experimental investigation of the
bipolar excitation of photo'c%'n"c'fttc~tance by means of doiible optical trannitions of
electrons through local energy levels which were introduced into the Si forbidden band!
iby radiational structure disturbances, Experiments were conducted to prove the
possibility of the bipolar excitation through the center E, + 0. 34 ev (E. - 0. 78
'A plot is presented of photoconductance damping after the cessation of excitation (by
1!0. 78-ev auanta) of an n-Si specimen irradiated by a 2 x 10" -e1 /CM2 beam. Also,
icurves showing the effect of the exciting-light wavelength (1-4 mt" ) on the electron
concentration in the conduction band are given; the integral electron beam was
7x 1016, the curves were measured at liquid-nitrogen temperature. Orig. art. has:
12 figures.
UB CODE: 20 / SUBM DATE: 14Jun65 ORIG REF: 003

L -23141n66 EJ,.r T/FlNP(t) 1,TP.(-C) -. JD
AM NK. IW66668"4q SOURCE CODE: ---UR/Oi6f/66-/O'dg/00~/0564/0565
AUMOR: Yukhnevich, A. _V. ikache v V - D. - 49M_kko L V t IL_
ORG: Belorussian State University im. V. I. Lenin, Minsk (Belorusskiy gosudarst-
vennyy universitet) , -
TITLE: Extrinsic radiative recombination in single crystals of silicon
SOURCE: Fizika tverdogo tela, v. 8, no. 2, 1966, 564-565
TOPIC TAGS: radiative recombination, silicon, single crystal, crystal theory
impurity band
ABSTRACT: The authors attempt to explain the mechanism responsible for impurity
recombination by studying the recombination radiation which is produced when non_
equilibrium carriers are captured by deep levels in the forbidden band which are thd
result of residual chemical impurities and other imperfections in the crystal lat-
tice. Excitation was produced by electrical injection through a diffused pn junc-
tion. The radiation was recorded by a system including a monochromator, lead sul
fide receiver and narrow band amplifier. In addition to the natural emission ban;,
the specimens showed an emission band in the impurity region with a maximum at 1.47~
U. The position of this maximum is independent of the conductivity type, resisti-
Card 1/2

L
ACC- 11.R: __ AP6006847
vity and previous history of the specimen. The intensities of the natural and im-
pur'.y bands differ noticeably from specimen to specimen for various current densi-
ties and temperatures. No correlation was found between the dislocation concentra-
tion in the single crystals and the nature of the impurity radiation. The nature
of the emitters responsible for this impurity radiation may be determined by study-
ing recombination radiation in crystals specially doped with various chemical impu-
rities. The authors are grateful to-Z. -M. Afanaslyev,and M, Y.- Bortnik for assist-
ance with the experiment. Orig. art. has: 1 figure.
SUB CODE: 20/ SUBM DATE: 25Jul65/ ORIG REF: 001/ OTH REF: 001
7p
V
Card 2/20

L 2aal-6 -2/EWT(1)/FWT(m)/F_VJP(t)/ETI IJP(c) GG/JD
EPF(n)
ACC NRt Ar,6oi2496 SOMCE CODE: UrVO184~65/008/004/1264/1265
_rY
AUTHOR: 11~~hnevich, A. Ve t Tkachev; V. D.
ORG: Belorussian State University im. V. I. Lenin,, Minsk (Belorusskiy gosudarstvenny
universitZE)
TITTZ: Optical analog of the.Mossbauer effect in silicon
SOURCE: Fizika tverdogo tela, v. 8., no. 41 1966,, l26441265
TOPIC TAGS: silicon, Mossbauer effect, recombination radiation, crystal defect,
radiation damage, single crystal
ABSTRACT: This is a continuation of earlier studies of the recombination radiation
of single-crystal silicon containing stable radiation defectsp where bands of impurit,,
radiation with characteristic lines having a width smaller than kT were observed (FTT
-V- 7) 3410s 1965). In the present investigation the authors observed additional emis-
sion bands occurring in silicon during the course of annealing of radiation defects.
Nonequilibrium carriers were produced in n-type silicon with resistiii_ty-4'-ToEm_~C~m
.by electric injection through a diffusion p-n Junction. The recombination radiation
.was analyzed with a measurement setup described earlier. The sampler, were irradiated
with a dose of 5 x 1018 rhotons/ca~yrqys from Co60 at room temperature. The annealing
was In vacuum of 3D-4 mm Ng. Five different bands were observed. They appeared and
disappeared simultaneously during the course of isochronous annealing. Two of these
were observed in the earlier Investigations* Comparison of the structure of the ob-