SCIENTIFIC ABSTRACT TKESHELASHVILI, N.K. - TKHORZHEVSKIY, O.A.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001755930004-7
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: July 16, 2001
• Sequence Number: 4
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

TUESHELASHVILI,N.K., kand.tekhn.nauk; ASHCHIAN, O.A., kand.takhn.nauk-,
.11-_,-- ~_. - -0-STi~H-7fit-, "T. I.
Mechanical injuries to tea leaves and investigating their
effect an the quality of,production for the purpose of im-
proving designs of plucking machinery. Trudy VHIICHP no.1:71-82
158. (MIRA 12:5)
(Tea machinery)

NOGAYDELI, A.I.; TUSEELASHVILI, R.Sh.; NAKAIDZE, L.T.
Reaction of dimethyld.4chlorosi-lane with 1,4-dihydro,'J.
4-dilithium-1 -methylnaphthalene. Soob. AN Gruz. SSR
38 no. 3:559-566 Je 165. (MIFd, 18:12)
1. Thilisskiy gosudarstvennyy universitet. Submitted jan, 30,
1965.

L 1128-66 W(m)/EPF(c)/W(J) RPL w/al
ACCESSION NR: AP5022931 UR/0062/65/000/008/1396/1402
546.287
01~5 4 5-S -*~ -o2j,
AUTHOR: Tkeshelashvili, R. Sh.; Andrianov, K. A.; Nogaydeli, A. I.-
TITLE: Reaction of dimethyl- and phe lmethyldichlorosilan~k"w,i,th, 1,4-dilithium-
-1,4-dihydronaphthal AX
- Le ~61
LC
SOURCE: AN SSSR. Izvestiya. Seriya khimicheakaya, no. 8, 1965, 1396-1402
TOPIC TAGS: dimethyldichlorosilane, condensation reaction
ABSTRACT: The reaction of dimethyl- and phenylmethylchlorosilanes with dilithium,
derivatives of naphthane was studied to determine its usefulness in the synthesis
of oligomers. The condensation reaction of 1,4-dilithium-1,4-dihydronaphthalene
with dimethylchlorosilane proceeds according to the following scheme
17- -H- Li
CHI CHI CH CHI CHI H CHI
Lsi-c,
-S'
Hj0 cl-ji
4H9 CHI, tits
Hs

1128766-_
ACCESSION NR,. AP5022931
The reaction product is a tetramer with a boiling temperature of 218-2200d (at.1 mm
11g). In the absence of moisture this reaction proceeds according to-
Clio It
ell, .11 it ell, if H Clio
-C1 + LOSLU + CI-J --J LA-Cl-0
CHs CHIH H CH
H If ILH -HCH2
Cl 1-c1
811, Ls J11a CHs
This scheme was followed also in the case of condensation with phenylmethyldichloro-
silane. In this case the products were: a dimer boiling at 200-20510C (I mm Hg) and'
a tetramer boiling at 245-2500C (Imm Hg). Boiling temperatures at reduced pressures-
refractive indices, and molecular weighta (elemental analysis) were determined for
all reaction products. 'In order to confirm the structure, the reaction products
were hydrolyzed to the corresponding dihydroxy-derivatives with various degrees of
card 2/3

-.L 1128-66-
ACCESSION NR: APS022931
Polymerization and transformed into other derivatives, Orig. art. has: 2 tables.
ASSOCIATION% Institut elementoorganicheskikh soyedineniy Akademii nauk SSSR
(Institute of Elemental Organic Compounds, Academy of Sciences)SSSR),-1;.--"
SUBMITTED: 09Jul64 ENCL#. 00 SUB CODE: GC, OC
No REF SOV: 001 OTHER: 000
Card 3/3

NOGAIDELI, A.I.- TKESHELASHVILI, R.Sh.
0
Condensation of acetylene with acetone in the vapor phase In the presence
of caustic soda deposited on activated gumbrin. Zhur, prikl. khim. 38
no.7.-1639-1640 J1 165. (MIRA 18i7)
1. Tbilisskiy gosudarstvennyy universitet.

TKESHELASHVIL . M V,
"-: - -,- -., - :-. --4 -.
Ifematological modifications following a major resection of the small
intestine. Soob.0 Gruz.SSR 17 no,4:343-350 156. (MIRA 9:9)
l.Akademi7a nauk Gruzijaskoy SSR, Instifut eksperimentallao7 i klini-
chaskey khirureii i gamatelegii, Tbilisi. Predstavlano akademikem
K.D.Firista7vi. - . .1
(INTESTINES-SUBAEU) (BIDOD--ANALYSIS ANV CHEMISTRY 1~

TKESIMLASUILI.T.V.
Functional associations between segments of the small Inteotine.
Soob.AH Gruz.SSR 16 no.4:325-330 '55. (MIJU 8:12)
1. Akndemiya nauk- Gruzinskoy SSR, Institut eksperimentallnoy i
klinicheskoy khirurgii i gematologiim Tbilisi. Predstavleno dey-
atvitellnym chlenom Akademii K.D Bristavi.
(Intestines)

TKESHELASHVILI, T.V.
Nerve regulation of the motor function of the small intestine.
Soob.AN Gruz.SSR 17 no.2:163-168 '56. (KLBA 9:8)
1. Akademiya nauk Gruzinskoy SSR, Institut eksperimental'noy
klinicheakoy khirurgii i gematologii, Tbilisi. Predstavleno
daystvitellnym chlenom Akademii K.D. Eristaii.
(INUSTIMIS)

OV/ /6,
USSR/Human and Animal Morpholory - Blood. General Problems. R-4
Abs Jour Referat Zhur - Biologli, flo 16., 1957, '(0558
Author Tkeshelashvili, T,V,
Title Mfiges -in-Me-Mo-od After Extensive Resection of the
Small Intestine
Orig Pub Soobshch. AN GruzSOSR, 1956, 17, No 4, 343-350
Abstract In dogs after resection of 35-6o% of the total length
of the small inte.B`U-ine the blood picture changed re-
latively 'little, The qu, of chlorides and N was in
the limits of lower ard hi[jier normols.
Card 1/1 - 102 -

-U0l'1VlLJ YT.V.; Kl,"VlJS'HVll,l, G.Yo.; A13E:l.,AlWT, A.].
Significance Of PlasTla subs itute made frcaj zeJ47.jr, ~rl the or'Y'D-lex
therapy of acute radiation sickness. Soob. AN GruzSSR 37 no.2:4'75-
479 F 165. (MIRA 18:3)

TKESHELASHVILI, V.G.
Hydrobiological regimen of '.ake Dzhandar. Soob. AN Gruz.
SSR 31 no. 33675-682 S 163. (IAIRA 1717)

-;A - .- .-:- T &--I, il .It .
,.'-1903. ;. .,
Cherkecskiy sol-t 7'. 17',U,~., -:".
E . ai, I I -, . - - - : - - - ~ '. ..
,Pjp. 7, 1949,s. 37-1 v. - sno . !:~-t -~ ::J L'C-.
i-2. - Edblioz--r: 8 nazi
SO: -etopis' z;hulral'nykh 6L.-Aeyy, Jo. 29, Lloskva, 1949.

21902.
k-;,,--erke. Trud,'7 pl.'r--snolarsK. L.2 S Cn . 7: r
4.3-47. - BiblioEr: 7 nazv.
SU: Letopis' Zhurriallnylch ~'A-ntey, ~!o. 29., iglig.

:-,-! - a - . ~ ; : i - - . - .
333),,3. OonovnTre ---30
e
SOrt, ' id. Sicl T 0: -orod
LA fi'USI - -- 1 194,91 ;10. 10, C. -,
SO: Loto- is' ~Wrnall nyi-In S-f,j%ey -Vol. :-Io.;;-.-va, 11,-;,,g

T 7"AG37--71 7 F71 Nu~-ha Ak-=~r'!c7ic'_
(K,iban I Arricii].4 ur 3 Tnst) AC!jr*~.-c n!' Dccto- ol' A r'
1'.q:-! 0:; ns-, 4 c- th!, Con C" C~
All-Urilo:i Scl Innt of' "lant Cuitlvn,io~i, o', !!~~7
Ac,i_1!n1c de~~-ro'o awl/nr title: Do)clor. z,11, sc; ncos
SC,: Declsir)n53 o' VA", Li-t ni-~. 2", 24 D-c 5)5, S-SP.

TKHAGUSHEV, N. A.
"Adygog (Circassitan) Orchards." All-Union Order
Lenin Academy of Agriculture imeni V. I. Lenin,
Plant Breeding., Krasnodar.. 1955. (Dissertation
Doctor in Agricultural Sciences)
of
All-Union Inst of
for the Degree of
SO: M-955., 16 Feb .56

1, TKIIAGUSHEY, 11. A.
2, USSR (600)
4. Nut a
7. WidesDread introduction of nut growing. Sad i og. no-10, 1952
9. Monthly List of Russian Accessions, Library of Congress, 'Ta"I'arY -1953, Unclassified.

THAKAKPI!, U.U.
"The Protein Need of Highly-productive Cows";
0
1,4~,vlert-~ttnn for the degree of Candidate of Agricultural Sciences
k,!-M,.-ded 1.11, the 'I'imdrmzev Agricultural Acadazy, 1962)
Moscow fio. 2,
y em d
oy Se" 13kokhoz. aystv- ipy Aka emi,
v .2 3 2- 31

POPOV, I.S., akademik; SKOROBAGATYKH, N.N., kand. sellskokhoz. nauk;
TKHAKAKHOV, Kh.Kh., kand. sellskokhoz. nauk; DAVYDOVA, L.P.,
nauk; FESYUN, G.I., aspirant
Protein requirements of high-yielding cows. Izy. TSKHA no.6:
191-202 163. (MIRA 17:8)
1. Vsesoyuznaya akademiya seltskokhozyaystvennykh nauk imeni
lenina (for Popov).

BOGORODSKIY, G.H.
The ty-pe M-M facsimile transmitter. Yest.sviazi 17 no.2:3-5
F '57. (MLRA 10:3)
1. Starehiy inzhener Takhnichoskogo upravleniya Mininteretva
nvyazi SSSR (for Bogorodski7) 2. Nachallnik laboratoril Hauchno-
isaledovatellskogo institute. Ministerstva radlotekhnicheakoy
promyshlennosti (for Tikhanov).
((Phototelegraphy)

oz] po I G U.
p o d p c) L, c,,rr. i I:
hq-crtant
rni-
V. -d
a:

U S - Kli iV . i*i -, a !,,,, I L , K, ~ " ~:! ~ ~, 1v -1 CIP , ",'I, H -I
P-Pit. I -ir-e -~f ~ ne
KabardIric.-Balkar
,gkogo izuchani"Is ......Mka r: !
Balkarskoe krIzhrne J7ri--,.,,- I.-r

SHAUTSUKOVA, L.K., starshiy prepodavatel'; 4' , student;
KRAPAZHEV, T.Sh., student-,XHAKULOV,q.LA..~atuden~;-. DZOBLAYEV, A.A.
student.
Physiological and biochemical change during amytal-induced sleep in
rabbits. Uch.zap.Kab.gos.ped.inst. no.10:113-127 156. (MLRA 10:3)
---tSMSP-THMPZWIC USE)' (AMATYL))

T
J L
IT-WIR/Pharmacology, Toxicology - Narcotics. U-1
Abs Jour Ref Zhur - Biol., No 3, 1958, 12845
Author Shautsukova, L.K., Tkhas4q_4pYj,.fi,I-) Khapazhev, T.Sl.,
Khakldov, L.A.., D~abl~jev, A.A.
Inst
Title Certain Physiologic and Biochemical Changes in Rabbits
During Amytal-Induced Sleep.
Orig Pub Uch. Zap. Kabardinsk. gos. ped. in-t, 1956, vyp. 10, 113-
126.
Abstract Experiments were performed on male rabbits. A 15% solu-
tion of sodium anrj-tal in a dose of 1.5-2 ml. was adminis-
tered into the ear vein on 3 successive days. During
the amytal-induced sleepj total plasma proteins decreased
in proportion to the duration of the sleep. Blood sugar
and iron decreased during the first two days but then be-
gan to increase until the sleep was terminated. During
the amytal-induced sleep there was a decrease in Hb. and
Card 1/2

Y.SSP/Xharmacology, Toxicology - Narcotics. U-1
Abs Jour Ref Zhur - Biol., No 3, 1958, 12845
in the number of RM) a slight leucocytosis and a shift
of the differential white count to the leucopenic side
but with an increase in all these indices when the sleep
ended. The changes in Hb.*paralleled those in blood
iron. The authors surmise that the efficacy of the pro-
tective inhibition of sleep may be judged by the bioche-
mical and physiolog;L.- changes.
Card 2/2

k H L
Ir A V v
lid
31

0 '1 1q Of -,. ~'.. , -J. '/.
; f! J-11 I V . .11L. I - 7
A1?T-,C,-'~j, U. A. , V P . M. j
, I -, i4"1'1Mj;1.P T. !1. ,and ;. 6!.
If K"r Ell L' r~ D zi'.4: L. 1 1. ~11- Ai: , Ir. V. ,(11M, "
"Treatment of Sillivtorm Cocoons by Radiation."
raper to be presented at 2nd U11 Intl ' . Conf . un the peacef ul uzer, of Atk-;-,iii(.,
Enera, Geneva, 1 - 13 Sept 5,~~.

GADAKFEARADZE, V. I. ; QUMLDZru L,
.A.I.
The introdliction of white cocoon and hybrid cocoons. Nkst.
prom. 16 no.8:8 Ag 156. (MLRA 9:10)
(Georgia--Silk manufacture)

TKHILADZM. G.
Methods for economizing drying oil.Stroitell 2 no.6:P,9 Je 156.
(MIRA 10:1)
1,Nachallnik TSentrallnoy nauchno-issladavatellskoy laborntorii .
GlavmoBstroya. (Ppinting, Industrial) (Emulsions)

SIZOV, Vasiliy Nilolayevich, prof., doktor tekhn.nau,;
RUDENKO-MORGUN, Ivan Yakovlevichl dots,, kand. tekhn.
aauk; e tqqj~jjq~yj_qjt2 inzh,; USE2-:KG,
_ L.Rrgi~__L
Vasiliy Mitrofanovich, kand. tekhn. nauk; SHVIDRIKO,
V.N., prof., retsenzent; DANILEVSKIY, A.S., inzh.,
retsenzent; KUPERSWIDT, L., red.
(Technology of construction] Tekhnologiia stroitellnogo
proizvodstva. [By V.I.Sizov i dr. Moskva, Vysohala shkola,
1964. 613 p. (MIRA 19?1)

TXHITADNE, G. R. ; VOLODARSKIY, G. 1.
Drilling and Boring
A drill with hard-alloy tip for drilling holes In brick- walls. Biul. etroi. tok-h. 9 no. 1.
1952. Minmaehetroy, Trent Otdelstroy; Inzh.
2
SO, Month List of Russian Accessions, Library of Congress, Aoril 19% Uncl.

DZ -~ -~ n ~.-TC.:)' " `
sta,l(:Iaxd hoce Soul-)
9. Monthl List of Russian Accessions, Library of Congress, 1,252 tq:;F, Uncl.

1. TKIRLOZE) 0. H.
2. ussm (6o(j)
4. Plastering
7. Rationalization of decorative work. Biul. stroi. tekh. 9 no. 1~, 1952.
9. Monthly List of Russian Accessions, Library of Congress, ja,~Iupry -1953, Unclassified.

1. Txt[m%r)ZE, -Z.
2. USSR (600)
4. Building Machinery; Plastering
7. Mobile plastering machine units Stroi. prom. 30, no. 4. April 19~2
Nachallnik Tsentral Inoy Nauchno-Issledovatel Iskoy Stantisii Tresta,
Otclel.-troy Minmashstroya.
9. Monthly List of Russian Accessions,, Library of ConCress, June Y)52.
UNCLASSIFIED

SHEPELEV, r-M., inzhoner; TKHILADZE, G.R., inzhener nauchnyy rodaktor.
.- -o,g,.- 'L.".
.,.:t,-,-,
[Paper hanging] Oboinye raboty. MoskTa, Goo. izd-vo lit-ry po
stroitalletTu i arkhitekturs, 1953. 31 P. ( MMA 7:7)
(Paper hanging) ( Wallpaper)

MILADZE. G.R.,.inzhener, nachalnik.
Finishing of building facades in winter. Stroi.prom. vol. 31 no.9:17-19
s 153. (KLBA 6:9)
1. Mentrullnaya nauchno-issledovatellskaya laboratoriya MiniBteretva
stroiteltetva. (Plastering--Gold weather conditions)

3352 TKHILADZE G. R. AND VJLODARSKIY, G. 1.
Mekhanizatsiya parkegnykh rabot. M., 1954 16 S. S chert. 26 sm (Akad. Nauk
SS~R. In-T Tekhn. hkon informatsii. Periodich -Infomatsiya tema no 47)
1.000 ekz B ts Na obl out Ne ukazarW (54-57189) 69h.631 a 3.0025

TKHIIAM, G.R.
,w
[Zquipmant for the mechanization of plaotering] Oborudo7ario
dlia makhanizateii ahtukaturnykh rabot. Moskva, Goa. izd.
lit. po stroit-vu i arkhit-.-e, 1954. 216 p. (MLR& 8:1D)

A
XMTOV, M.A., redaktor; THILAIZE, G..R., iU2hener, nauchnyy redaktor;
BEGAK, B.A., redak6o:~r-;--~:-P~z,`- It.N., tekhnicheskiy redaktor.
[Technology of finishing work] Otdelochnaia tekhnika. Pod obshchei
red. M.A.Krestova. Moskva, Goo. izd-vo lit-ry po stroitel'stvu i
arkhitekture. No. 2. 1954. 82 p. (MLRL 7:11)
1. Akademlya arkhitektury SSSR, Moscow. laboratoriya. otdelochnykh
rabot.
(Nades) (Painting, Industrial)

TKHILkDZE, G.R., inzhener.
~zm--
- For progressive technology in painting. Gor.khoz. Mosk. 29 no.11:
27-31 N '55. (MLRA 9:3)
(Painting, Industrial)

MESHMVSKA.YA, V.V.; SMIRITOV, V.Ya.; ANTIPOV, M.M.; TKUILADZE, G.R.
Mobile mechanized machine for preparing paint components. Rats. i izeb.".
pradl.v strei.ne.123:6-9 '55- (MLRA 9:7)
(Paint machinery)

SMIRNOV, V.Ya.; PEUPELKINA, M.S.; ANTOIJDV, M.M.;,.TKHj& "DZ ,G.R.
Mobile all-purpose machine for parquet floor layers. Rats. i izebr.
predl.v stroi. ne.123:13-17 155. (MLRA 9:7)
(Parquetry)

VASAXZ, TO.N. 4*4w-
1 q
Turbodrilling of mine shafts. Azerb. neft. khoz. 37 no.8:
21-24 Ag 158- (MIRA 11:11)
I (Shaft sinking)

.-TKHIR, D.G.
Tiquifnent. and technology for drillina AtruturaI-prcspe--,,Ang
wal3s on the 4.-srritor-y of the Xast Ukrainian oil- and gaa-
bearIng region. blefto I gaza prom, no*4977-2-:9 0-.0 V64
(MIRA 18-~2)

TKIIIR, D*Go
Turbodrilling in sinking structural wells. Neft. i gaz.
Prom. 3:35-36 JI.-S 165. (IIII-PA 18:11)

1 ' ~~ -05 7E`Nr ( J )/FCC GW
M--Xk6617i47 SOURCE CODBI UR/0169/66/000/001/DO14/*DO14
AUTHOR: Parkhomov3kiy, O.A.;-Andreyeva, R.I.; Burakovskiy, Me. Goncharova, T.Aq;
Grigorlyeva, A.I.; Ivanets, N.I.; Ivanyuta,-A.W.; Kozar, L.T.-;-Aayklie-r*-,-L,'D',--;-
zfi-.Ja.jjk~~~~-
TITLE: Determination of the development level of the technique and technology of
logical prospecting for oil and gas in the Ukraine
SOURCEt Ref. zh. Geofizika, Abs. ID97
REP SOURCE: Tr. Ukr. n.-i. geologorazved. in-t, vyp. 10, 1965, 10-17
TOPIC TAGS: prospecting, seismic prospecting, gas
AEMaLF-vrn , magnetometer gra t ni8rx,4_
ry 'V-2
-ABSTRAM Geological-gg.2p~Li~jcal pr specting f r :it i FdgR3, completed on the Ukrai
neduring 1960-1962 was ana 'lyzed.'At present all the oil-bearing territory of the Uk-'
raine is covered by prospecting survey with the M-2 maanetom0ter%7h4 cost of study
was 46.4 roubjLes/km2. The output and.precision of the aeromain-etic survey is much bet
ter. The gravimetri i iurvey is basically.compleft. The cost of the total.survey was
92.2.toubles per km n 1960 &M 47o2 roubles In 1962, Highly p*recisegravixeters
(,01 - 03 agal) can elucidate various anomalies' InspLte of the relative cheapness a
of the electro-recon,method, and its nobility# L; has not been Itorded the deserved
develo*nt In the Ukraine# Volume of seismic work teaches 87% :f the total geophysi-
Catd 1/2.
UM 550,830(477)

L 06143-67
ACC NRt AR6017547
Cal work volume. Cost of I km of seismic profile work was 560-850 roubles. In 1962,
scismic reconstructing instrumentation for the automatic processing of seismograns,
and design of boring sections.,, has been developed. Technoa-economical indices of struc-
tural mapping boring are very highl those of structural-recon boring are at relative
1y low levels, On the basis of consideration of the possibilities of each method, a
methodology for 6e recon of oil and Sao is proposed. Trowlation of abstract
SUB OWBI 08
Card 2/2

TMOMIROV,
Staff catchers must be impro7ed. Avtom., telem. i eviaz'2 no.l:
39 A '58. (MIRA ll.-J)
1. Starohiy alektromakhanik Volkhovetroyevokoy distanteii signali-
satoli i ovyazi Kirovskoy dorogi.
(Railronds-Signalingl

ADAMOVICH, A.V.,, kand.tekhn.nauk; TKHOMIROV, Ya.V., kand.tekhn.nauk
Statistical inveBtigation of the strength of the block carter
of a V-engine. Aft.prom. 27 no.8:8-11 Ag 161. (XPA 14:10)
1. Nauchno-iosledovatellskiy avtomobilInyy i avtomotornyy
institut.
(Automobiles-Engines)

LEVIN, V.I.; GOLLFTVINA, M.M.; TKI011ROVA, Ye.A.
Preparation of arsenic-74 from neutron-irradiated selenium.
Radiokhimiia 3 no.5:597-600 161. (MRA 14:10)
(Arsonic--Isotopes) (Selenium) (Noutrona)

BASARGUT, V.A., inzh.; GRINBERG, V.L., inzh.; TKHOR, A.~., inzh.;
ZAZIMKOY V.N., inzh.
Mechanization of duck brEeding farms. Mashinostroenie no-5:
83-84 S-0 164 (MIRA 18.,2)

TKH,)R, L.F.
Chemiluminescence of oleic acid. Trudy MDIP. Otd. biol. 21:
203-205 165. OuRA M6')

THOR, L.F., KOZ1,011, Y11.11.
Effect of smAe antibi?:~tics on the n-hemiluminescence of olaie
acid. Biofizika 10 no.'~8523-9124 165. 18.11)
1. Biologo-pochvennyy fakullhet Moskovskogo gosudarstvennago
l.mivers-'l.elua imeni Lomonosova. Submitted July 11, 1964.

THOR) T.G.; PANKRUITOV, M.A., Prof., nauchnry nikovoditely raboty
Restoration of refle,,;es from the allricullar skin of a rabbil" a2
u
related to the regeneration of nol-veg. Uci,. 2fip. ped. inst. 6ert.',
239: 131-137 164. 0~'IPA -18:3)
.it

BEDIIYY, M.S.; TKIIORI V.G. (Dmpropetrovok)
Oldest hospital in the Ukraine. Sov. zdrav. 21 no.2:6o--63
,62. (14IM 15:3)
(UKRAINE -HOSPITALS)

USSR/Farri Animals. Sheep and Goats.
Abs Jour: Ref Zhur-Diol., No 17, 1958, 78766.
Author Lermntov, V. S.,-.
List -T40~-~~~
Title On the Effectiveness of Winter Lambing of
Sheep.
OriG Pub: Ovtsevodstvo, 1958, No 1, 5-6.
Abstract: In a test group (February birth), 5% of the
ewes were barren, 0.5ftf, of the la s died; 124
lambs of 100 ewes were raised. In the control
group (April birth) respectively: 15, 2.1 and
100. Difference in live weight of the lanbe
for 5 months in favor of the test group com-
prised: with young rains 2.7 kg., ewe yearlings
Card 1/2

USSR/Farr' Anir3als- Sheep and Goats.
Abs JOu-r: Ref Zhur-Diol., No 17, 1958, 78766.
0.6 kg; in length Of wool., respectively: 0-7
and 0.6 cm.
Card : 2/2
Q
44

L i3o64-63 BDS
003010
ACCESSION RR: AV S/2927/62/000/000/0235/0235
AUTHOR: 14iselyuk, Ye. G.; Tomashewkaya, R. L.; Morik, Yu. A.
TITIZ: , Ten-element diode matrix (A brief information) [Report of t~ie All-Union
Conference on Semiconductor Devices held in Tashkent from 2 to 7 October I?blj
SOURCE: Elektronno-dy"rochny"ye pereRhody* v poluprovodnikakh. Tashken4%-Ij lz(l-vo
m uzssR, ie62, 235
TOPIC TAGS: semiconductor matrix, diode matrix, ten-element matrix
AWTRACT: Soviet-manufactured IN-10Aen-element diode matricesk'are intended for
passive-storage computers. The UM-10 matrix comprises 10 di6des with a common bas
e
7 mounted on a 10 x 10 sq mm panel; it has following parameters (with -_01% spread):
maximum forward current 0.25 aziLD, maxbi= peak current I amp, forward resistance at
0.6 v 2-4 o~nms, peak resistance 5 ohms, maximum reverse current 6 m-i=oarm
breakdown voltage 60-80v,, operating temperature range .-50 +65C. Crig. art. has:
1 figure.
ASSOCIATION: Akademiya nauk SSSR (AcadenW of Sciences SSSR); Akademiya nauk
Uzbekskoy SSE (Acadenw of Sciences UzSSR); Tashkentskiy gosudarstvenny*)r
Card (Tashkent St..IJn.)..-.

AFn(,'
ASD/ES~~ - Rm-4
_kz,-4/
ACCESSION NR: AT3003011 S/2927/62/000/000/0236'/0243
~'AUTHOR: Miselyuk, Ye. G.t Tomashevskaya, R. L.1 Tkhorik, Yu. A.
TITLE: GermaniurTliffusion diodegifor pulse cl~~nuits [Report at the All-Union
Conference on Semiconductor Divicos, Tashkent, 2-7 October, 19611
SOURM Elektronno-dy*rochny*ye perekhody* v poluprovodnikakh. Tashkent, Izd-vo
IAN Uz$SR, 1962, 236-243
TOPIC TAGS: germanium diode, IDG-1 diode
ABSTRACT: As a prerequisite to the development of high-power pulse-type Ge diodes,:
11ransients in Ge diffusion diodes,were studied. Effects of resistivity and life-
time of materials,geometric factors, and p-n junction processing on the switching
characteristics of diodes were investigated. Particularly, the effect of injection
level (or forward current) and reverse voltage on the reverse-resistance recovery
time, for-various lifetimffl and base thicknesses, were investigated. As a result,
a new Ge diode, IDG-1, with these parameters was developed: peak current with a
0.5-microsee pulse and 1/2000 pulse duty factort UP to 15 amp; voltage drop at
I amp, 0.6 - 0.8 v;,forward resistance, 0-5 - 1.4 ohms; reverse current, 0.6 - 15
~!Cwd 1/_2,__..

L 12815-63
ACCESSION HR: AT30030 11
;mioroamp; breakdown voltage, 80-100 V1 recovery time, 0.25 microsec or less;
Lemperature range, -1 6 . The
pulse forward resistance, 5 ohmsj woelcing 00-+ 5C
11DG-1 diode was tested in various computers and is recommanded for use in
switching circuits, ferrite-diode circuits, ferroelectric circuits, discriminators,'
a
~;registers, and other circuits involving heavy currents. The diode was set in small-';
i'lot production. Orig. art. has: 7 figures, 5 formulas, and 3 tables.
ASSOCIATION: none
SUMMED:- 00 DATE ACQ: 15May63 ENCL: 00
2SUB CODE: PH, GE NO REF SOV.- 006 OTHtR:,OO8
Card 2/2

7 7,j
AUTHOR: r.11khoryk, Yu.O.
37673
5/185/62/'007/005/003/013
D407/D301
TITI~E: Bmis;~ivity of diffused P-n junctions
P--'RT0DIC11L: Tlcrayinslkyy fizychnyy zhurnal, v. 7, no. 5, 1962,
476 - 481
T-1E,.-,1'_T: 11he distribution of carrier concentration in adiffused P-r.
j,:.--c-11-ion is considered which has been obtained by the method of
~'r. ?-
ul-ex-modi ffusion. 1. formula for the emissivity of n--n junctions is
obtained, It vias shown by K.B. To!pygo (Ref. 1 : ZhT!-', 27, 884, 1957)
C,
that the coefficient of injection Y is not a const-ant of the p-n
-unction 'as in Shock-ley's theory), but depends on the structure of
J
, k -
,je junc--ion, the DroDerties o-P the contact me-al-semiconduc'or an,3
U_ - - - - U U U t, -
-'U*he :,_a,-,_n_i-Uude of the current. The Pa-ran"eter P, called by Tolpygo
the eymissivity of 4-
Uhe p-n junction, combines all these properties.
t
In Ref. 1 (0j. ci . ) the -aarameter ~ was calcul ated for linear and
e.-.-oonential aistributions-of the doping impurities and criteria 'L'or
high emissivity (i.e. large values -of P) were derived. Large values
C~
of ~ are particularly important for pulse diodes, where a low direct
Card 1/3

3/185/62/007/005/003/013
Emissivity of diffused p-n junctions.- D407/D301
resistance is required; as pulse diodes are normally obtained by
the di.-ffusion method, it is important to derive analogous criteria
-,or diffused p-n junctions. It is assumed that the D-n junction is
formed by the diffusion of donors in a -D-type semiconductor. There-
by the donor concentration decieases wiUh the distance 1'rom the ed-
ge according, to the law erfLc(Y-/2Y5-T), where x is the-distance, D -
the diffusion coefficient of the donors, and t - the tire of dif-'u-
sive a.=ealinr7. The n-layer Js:divided into 3 regions; the points
ana Oahlch are dimensionless coordinates related to x), are
12
chosen in such a aay that the donor concentration can be app.roxima-
Ued by a linear function or by an asymptotic formula. After calcula-
tions, one obtains the following formula for P:
x(O)/Q+
I.Ln 9 (15)
1 + Aso Q+
where Q+ is the transmittance (for holes) of the contact; N = n/p.,
(n being the electron concentration and P P - the equilibrium concen-
Card 2/3

2missivity of diffused p-n junctions D407/D301
U.-ation of holes in the base), The accuracy o-f the
above az)Droximation is est-imat-ed. TheriO~_ one obtains
1 -_~:> Q = I- A,-:
2 -.,T(O).
(24)
+ -0 :; 0
2ormulas (15) and (24) are in agreement with the corresponding for-
mulas of 1-4ef . 1 ( 0-o. cit .ii is noted that- the emi'SEilivity of the
p-n 'u-Iction (in the case of a linear impurity distribtition) increa-
ses with dv/d,� (,v being related to the donor-concentration dis-
Uribution); for a dif"Z"used p-n junction dv/dJ is a va.riable quan-
tity. It is also noted that, other conditions being similar, the
em4_ssivity of diffused --n. junctions is higher than with a linea.-
P
ripurity-distribution. There are 1 figure and-5 references: 3 So-
viat-bloc and 2 non-Soviet-bloc. The Most important English-lang-
uage Dublication reads as follows: J.R.A. Beale, Proc. Phys. Soc.,
70t 1087, 1957.
S/185/6-2/007/005/003/013
ASSOCIATTOY.1: Tnstytut naD4vnrov4dny'--iv UNT U.Sa (institute of Semi-
U
conductors of the AS T.MrRSR) Xyyiv
SUB;';-;-_--TT2D: January 24, 1962
Card 3/3

0
S/1 09/62/007/006/021/024
D234/D308
U T IHO EI Sr~olomiyets, B. T., Litvinova, E. M., Miselyuk, Ye. G.,
T'xhorik, Yu. A. and 6hilo, V. P.
_'-'ffect of fusible glass coating on the characteristics
of germanium diodes
PERIODICAL: -Hadiotelchnika i elektronika, v. 7, no. 6, 1962,
1054-1055
TEXT: Three types olf glass coatings on germanium diffusion diodes
were Uested: As2Se 3*i1.5; As2Se3 Tl2Se; 2AS233 T12S. The ahole ex-
posed surface of' the semiconductor, including t~e D-n transition,
was coated. A graph of a typical variation of V-A characteristics
aluer coating is given. The characteristics so obtained were prac-
tically unchanged over many days. Glass coating is found to im-
prove essentially the inverse branches of the characteristics. The
effect of all three types of glass is nearly the same. Improvemen1l;
of characteristics was also observed when the glass had been re-
Card 1/2

S/I 09/62/007/000'/021/024
Ef.-;L'ect of fusible ... D234/D308
moved _J_-.mediaieiy al"ter coating which disagrees with the result of
t3
other Soviet authors. There is 1 figure.
ASSOCIATION: Inszitutl poluprovodnikov AN USSR; Piziko-tekhniches-
k1iy institut im. A. P. Joffe AN SSSR (I'nstitute of
Semiconductors, AS UkrSSR; Phn J -Technical Insti-
tute im. A. P. Joffe, AS Us Sgsico
SUB17%=TED: February 13, 1961
1
2'12

TKHORIK. Yu.A. [Tkhoryk, IU.0.]
Accumulation of minority current cArriern in nemicandur-tor
diodes with a narrow base. Ukr. fiz. zhur. 8 no.10:1128-
1141 0 163. (MIRA 17:1)
1. Institut poluprovodnikov AN UkrSSR, Kiyev.

ACCESSION NR: AP4017393 8/0186/64/009/002/0139/0149
AUTHOR: Ilyonkov, A.L; Tkhory*k, Yu. 0.
TITLE: Measurement of short lifetimes of current carriers in semiconductor devices
by the pulse method
SOURCE: Ukrayinslky*yfizy*chny*yzhumal, v. 9, no. 2, 1964, 139-149
TOPIC TAGS- semiconductor, semiconductor lifetime, ptilso method, current carrier
effective lifetime, diode, transistor
ABSTRACT: The effective lifetime'ye of the minority carriers In the base region of a
semiconductor devico is the most important parameter which determines the frequency
characteristics and the transient response of the device. Many methods for measuring
'Ye in diodes have been proposed but the most practical and direct method is based on the
investigation of the transient process which arises during diode switching. For values of
,Y,D ::* 10-7 sec, the measurements can be performed on an oscilloscope. When a p-n
diode is switched from forward to reverse, the reverse current is established in two
stages thm or phase of constant reverse current (when the diode reoistance.19 small com-
pared to the external circuit resistance) and the phase of current decay (which begins when
the minority carrier concentration near the p-n junction goes to zero). The forward cur-
re tie length ti, its magnitude If, as well as the magnitude of the reverse current
Card 1/0"

ACCESSION NR: AP4017393
which flows during tlim, are related to 'Yo by the formula:
tlim 1 ti + tum.
erf - erf
B0 + 1 ly
where B0 IV and B0 0. 5.
if
Equation (1) is valid when the base region Is much longer than the diffusion length of the
minority carriers and when the switching pulse has zero rise time. When the finite rise
time in the leading edge of the switching pulse to taken Into account the use of equation
(1) may lead to serious errors - For a planar p-n junction diode switched by a trapezoidal 1
pulse, when the forward and reverse resistances in the external circuit may be unequal
(Fig. 1 of the Enclosure), the following formula is derived, which gives the desir W
minority lifetime Ir in terms of.measurable parameters:
Card

ACCESSION NR.- AP4017393
2(a+b+c)-
two e-jd+ +C)+,,
erfVW+&+c+
:2a a ]/-x
2(6+c)-1 VVT-C (2)
erfY-#+c+-
2a 7ft
al
0 (?C- l rf VF+ !~C: e
b 2
tf tr te
where a b and the intervals tf, tp and tr are def ined in Fig. 2 of'the
Enclosure. Equatio'n (2) can be simplified considerably If the constant reverse current
interval, t1i , is shorter than the duration of the leading edge of the switching pulse
(Fig. 2b). TIgeneral laplace transform equation from which an expression analogous to
Eq. (2) can be derived for any switching pulse shape, is also derived. The errors which
can be encountered In calculation, when the finite duration of the leading edge of the
trapezoidal pulse is neglected (as in Eq. 2), are summarized In Fig. 3 of the Enclosure.
Some experimental data which support the conclusions reached In this paper are tabulated
in the original.' It is evident that for large BD values the values of *7'1 are too low. 7'he
i Card

ACCESSION NR: AP4017393
error Ire - 1"I is systematic and ranges from 13. 6-21. 6% for Bo 0. 2, from 7. 2 to
're
17.7%forBO=0.459andfrom22.2to42.4%forBo=l. The accuracy in the estimate of!
Ire is 6. 6% and also Y 2 < Ir e even though the error in -1112 is smaller than In *r 1. "The
authors thank E. M. Ly*tvy*noviy for construction of the diodes. Orig. art. has: 3
figures, 1 table and 31 formulas.
ASSOCIATION: Insty*tut avtomaty*ky* ta elektrometriyi, SV AN SSSr, Novosibirsk
(Institute of Automation and Electric Measurement); Insty*tut napivprovidny*kiv AN
URSR, Kiev (Semiconductor Institute)
.,,SUBMITTED: 06Aug63 DATE ACQ: 19Mar64 ENCL- 03
SUB CODE: PH
NO REF SOV: 014
OTHER: 004
4/0 Y
Qrd

ACCES570N ,,A. AP4038648
A H Bordarenko. V. IN.. Litv,,n,~va Yu A
L i_. Effect of sonic coatings and thormall treatrnent of the surface
r :;mbination rate of silicon and germanium
SOURCE: Radiotekhnika i elektronika, v. 9, no. 5, 1964, 876-881
TOPIC TAGS: silicon, rnetal coated silicon, germanium, metal coated
germanium, surface recombination, surface recombination rate
ABSTRAC,,T: An experimental investigation of the effects of (i) low -temper ature
arme-alinje-of Si and Ge in He atmosphere anc' :n contact --v,.th low-melt inarganc
glasses and Z) coati-ng St and with a vei-y- th-in filra of Au or Al upon the
surface recombination rate (a) is reported Single-crystal. 0.4-0.7-mm thick.
St &rill Ge platee were tested Four lypeft of g;as!3 'Afe-
L 1-i.9 e d: ( I ~ TSe A a S
-u?
A r, (8:~C), Aa
(with a auffening temperat -~_- of 5C -T,
2 2 3
Card 1/2

EV
L -20501-65
ACCESSION Nik: AP4038648
and TI S - Z As 2 S3. Tt ia found that anneal in g of n- or p-ty-pe Ge results in an
of zi b-," Z- 3 times, a. siib5~qiznt contact with glags req,,ilts in an overall
ip, c.-e as e of 9 by 3 mes. A,-, ~-r a' r(- ra a, -x, it h a
subBequent glass ireatment, a wazs zred,,ced tQ abokit 300 crn,- sec. The game
of s was obtained by a vacuum-spra~ ing of n-Si by gold (0. 1-0. 2 micron thick).
The prelirnir-~a.-Y, resulta of Al spra-~~iri- -,xrcre regative. ''The aLutriors Wish to
thank B - T. Koiorn-lf ets and Y. P. Slrul-:) f37 the giasseq Or:)~_ 3,--..
has: i figure, 2 formulas, and 3 tables.
ASSOCLAM014- Institut polu-provodrilkov AN UkrSSR (Distitute of Semiconductors,
AN ljkrb--'-.i)
SUB-x4-'-fT:e:D: 221'Aar63
ENCL: 00
SUB CODE: mm, ss NO REF SOY: 006 OT HEA: 0 0 4
,-:1

L 14799-65 AFWL/A5D(a)-'l',/E_S:;(t
ACCF.S~31()',; NR: ~A['34044'169
ikT_-.THOR~ Z. S. . G-iir,k~)-, 7. S , TK,ir,-q:l:'K, Yu
TITLE': Trunsient .roceEses of szorave di5sipatiwi i)f nonequilibrium carri-
ers in semiconductor d~4)(les 11 liqlh injec_-lion 1eveis
SOURCE: Ukrayins'ky*y fizy*chny*,,,- zhurnal, v. 9, no. 3, lq64,
TOPIC TAGS transient process, tsemiconductor, carrier storage, r1rrier
dissipation, semiconduc'.r,r diode
ABSTRACT: The processes of stnrage and dissipation of non-equillibriurn charge
carriers in P p+-i-n+ diode at hiLlh in)ertion levels are investigated, --tild ex-pres-
sions are derived for the transient Concentrations and for the dissir)atlon T.!!-n(I
The latter bare valid for b,th high '-i low TYe
-har-acterl'stlu"; llas I m!'1111111ril has T
(A' the voit- rnpere ck.-ira( lil- d1o'les ')f tile 1- rl- :;nd p m-tz~..
types S .nows that the transient processes Ji ile fi, st type are detee-nalned by
Card 1/2

L 14799-65
ACCESSION NR: AP4044168
diffusion, and in the second type by the drift. The author is grateful to
A. P. Klimenko for help with the experiment (-)ricT arl has: 8 figiires, 'i'-1
equations
ASSOCIATION: Institut poluprovodnikov AN URsR (L-istitute of Semiconductors-
AN UR-SR)
SUBMITTED: 19jan64 ENCL: 00
SUB CODE: SS NO REF SOV: 012 OTHER: 003
Card 2/ 2

I
GRIMIKOV , 7,.S. [Ilrybnykov, Z.- 1; THOMK, Yu,A. [Tkhoi,yk, I
T ran sients of stwra ge and de cay ~: _' n~, ~ I' -_ --' ',-,r 4---
- .1
in semiconductor diodes. 3. 35~=.stric thin diodes at
superhigh injection levels. U~=. fiz. zt-nir. 9 no.9:943-94-/
s 64. 1-1 : 11)
1. Institut poluprovodnikov All' UIXSEST, Kiyev.

GOREMP , A.P. ; TMOTRIK, Yu,.A..
Device for me a ovxing 4 he r. a par. I3f Sem~' cc nc-c ' - " * ~--05 -
~vtom. - Lrib. no.2:57 '4- *i~je 163. (-.' -- I P, : P. '.
1, -6 ) it -- )
1. Inst-itut pc1uprovr~an*111kov

ZHURAVI T I F.I,,. I !,IYEN . - MHOR "Y ~, '-, . 1'~.
. ; - -n
I - - - - I-- ~ ~I.I.- - - --,
E%ralua-,'c~n ~,- th,~ pz,-is;~! c' -
I , , -. : - 1~__
Trudy inst. avtoim. A -~ j, -:i k- - -) Tre, t, ~ . . " 0 m - _..' .
, t! P~ "', P . P,

nHORIK, Yu.A.
Effect of the dependence of the recombination speed in- thre plaze
of a non rectifying contact from the injection level on the spread-
ing, time. Radiotekh. 1 elektron. 10 no.3:574-576 Mr 165.
(141FA 18:3)

MORIK, YusA.
Hature of inertial p-n junction diodes with r-all leakage- rates
of the minority current carriers -hrough a norrectifying 'Junction.
Radiotekh. i elektron. 10 no.6:1162-1163 Je 165.
(1,11RA iP,.,6)

KLIWNKO., A.P. [Klymenko, A.P.; TKHORIK, Yu.A. [Tkhoryk, H.O.]
Use of the simaltaneouB diffusion of two admixturces in manu-
facturing quick-response diodes. Ukr. fiz. zhur. 10 no.2:238-
239 F f65. (MIRA 18W
L, Institut poluprovodnikav AN UkrSSR, Kiyev.

KLI1,1127,KO., A.P. [nymenko, A.P.]; TKHORIX, Yu.A. [Tkhoryk, IU.0.1
Effect of the duration of the pulse frort on direct tr-eunsien"s
in semiconductor diodes. Ukr. fiz. zhur. 9 no.3,ltl271-12?3 N 164
(MIRA 18:1)
1. Institut poluprovodnikov AN UkrSSR, Kiyev.

C,R_,Bjj'T:(~"7, 7.,,..
_ [ 11--ybny' Z S I TKI101=, YL,,,t,.. D-.' '
KC11 ,L-J; I
Transl=nt processes of Storage and rJecay rlf nonequ!
curren-~ carriers in seminonductor dicjeo, ~'ar-~ 1. Lrw --n-
jifiction I-eve!.-. Ukr. flz. zhur. 9 no.6:648-058 'Je ?r*',4,
0111FA 17: 11)
1. Institut poluprovodnikov AN UkrSSB, Kiyev.

BONDARENKO, V.N.; LITVINOVA, E.M.; SNITKO, O.V.; TKHORIK, Yu.A.
Effect of thervial treatment and some coatings on the velocity
of -i and Ge surface recombination. Radiotekh. i elektron. 9
no,5 876-881 My 164. (MIRA 17:7)
I. Lnstitut poluprovodnikov All UkrSSR.

ACCESSION Pill: AP500-7; 7
A : 7 1' ~ jIFlchcr_k, Y,i. A.
T1 T 1, E: Effect of the re( i- i b ~A t I he tC r 1 p
SOURCE: Radiete.1-hritka i elektronika, P); no. 574-57~)
TOPIC TAGS: sernconductor characteristic, depletion time, serT!icorid,_i(:t,_)r
property
ABSTRACT: Several Sovict and Western art,,rlfs aru briefly re-Viewed in f,,gurlng
out the effect of the Injectto-n level on the rek orribination rate in (gri)kind-s,irface)
p-Ge of thick-base diodes. A formula (4) for the depletion time is developed.
Coating a ground Ge surface with Sn does riot affect the staLos respoiisihl(~ ff-,r the
rerombination rate; this fact %was pr----z~ w*.1h spec
-,w-,~'lies t,,, Oiank V. (--.. Litr-~-chpi-_Kr'
Card

L 1~ 207-65
ACCE6blON NR: AP5007109
for his valuable hints, and T. M. Aaakhanyan for a discussion. " Orig. art. has:
3 figures and 6 formulas.
ASSOCIATION: none
SUBNUTTED: 28Mar64 ENCL: 00 SUB CODE: EC
NO REF SOV: 006 OTHER: 005
Card 2/2
WRAMMMW
..... .....
Offill, ft-

L 8827-65 F__'?1T(m)/E1,VP(q )I/EiVP I b)
E
F__ E D(t)/~AEM(t) JD/~G;
SD dp)TS
ACICZiSION, NR: AP4043094 .~/0185/64/009/007/0733/0743
AUTUORt K *menko,--A. P. (KItmenka, A. '%); Tkhory*k, Yu. 0. (Tkhorik,
Yu . A.)
TITLE: Investigation of recombtnatton in nickel atom-c in p-germamium
at high injection levels
ISOURM Ukrayitta'ky*y fizy*chny*y zhurnal, v. 9, no. 7, 1964, 733-
1
:743
JOPIC TAGS: injection level, current carrier recombination, current
'carrier lifetime, diode saturation current, germanium. nickel, nickel
,impurity concentration, semiconductor, seniconductor device, semicon-
ductor diode
ABSTRACT: The dependence of the lifetime T of current carriers in p-
Cc dioden doped with Ni on the injection level and the temperature
has been investigated. It wa5 found ti,at in diodes the dependence of
o s temperature is wreaker th an tit ma~; i%re spec inen,; because of the
inf luence of a surf ace rpcnml~ I nar i,~n ef f i cl enc,, increases W[th
Card 1.2

L 6827-65
ACCESSION NR: AP4043094
cooling, The theoretical and obqerved dependence Of T On the injec-
tion lerel agree qualitativelv, The pulse method for measuring T haS
been theoreticallv analvzed. The calculations show that the oulse
method provides accurate values for i- and T_ at vantshfng small and
superhigh injection ieveli. To cedu-e the errors in the region of
medium injection levels , the narameter has to be increased for the
measuring circuit 12!I1, where 11 iq the amplitude of the forward
current, and 12 is the amplitude of the reverse current af ter switch-
ing ofF the diode. As an eAanple, a caiculation was made of the de-
pendence of the injectton level on the current density at the p-n
junction in p-Ge with a concentration of 3x101c, cm-3 of Ni at 296K,
235K. and 185K. Orig. art. has: 6 figures and 44 formulas.
ASSOCIATIONi Inatitut poluprovodnikov AN URSR, Kiev, (Institute of
Semiconductors, AN URSR)
SUBMITTED: 05Aug63
0
SUB CODE: EC
Card 2 / 2
ATD PRESS: 3106
NO REF SOV, 016
ENCLi 00
OTHER: 010

MICIM, A.P. [Klymnlco, A.f .1; D'HOUK) YU.A. [akhorykz, ItI.G.
Study of reconbina-,iono on nic'--el at7-.~3 Jx- -i:_ ,at ~,_;
injection levels. Ul-r. fiz. zhur. ~j7 nc--7:73:~-743 J! 16!4-
1. Institut poluprovodniko-7 All' UkrSS,-~, .'ay~,v. (!.aA 1-1:10)

TKHORIK, Yuriy.Alsksandrovich (Tkhoryk, IU.0.1; KISINA, I.V., red.izd-va;
RAKWINA, N.P., takhn.re-d-.-
[Semiconductors and electric power] Napivprovidnykova energetyka.
Kyiv, Vyd-vo Akad.nauk URSR, 1959. 51 P. (MIRA 13:9)
(Semiconductors) (Photoelectric calls)

L 20950-66 EWT(l) IJP(c) AT
ACC NR: AP6006759 SOURCE CODE: UR/0185/66/011/001/0040/0044
AUTHORS: Svvechnykov, S. V. Svechnikov S. V.); Tkhoryk-
(Tkhori-k-- _~_ - P r 4 Yu. 0.
J_Yu. _A), y-s menn Y" M. Lt. I
ORG: Sem1conductor Institute UkrSSR, Kiev (In6tytut
napivprovTdnyk:Lv AN URENT
TITLE: Concerning the problem of a transparent contact for II-VI
type pbotoconductors
SOURCE: Ukrayinelkyy Mychnyy zhurnal, v. 11, no. 1, 1966, 40-44
TOPIC TAGS: cadmium sulfide, cadmium compound, photoconductor,
photoconductivity, single crystal, optic property, electric property,
mercal vapordeposition, volt ampere characteristic
ABSTRACT; -The aiibbors
transparent ohmic
properties of CdS
vestigated., along
films. The films
-,Card,-
discuss the possibility of using CdO films as
contacts for CdS-type photoconductors. The contact
single crystals and films with CdO films were in-
with tbe-optical and electrical properties of CdO
were obtained by cathode sputtering of metallic

L 2og5o-66
'ACC NR: AP6006759
icadmium in a low vacuum under the following conditions: cathode
Idiameter -- 6 cm, cathode-anode distance -- 1.6 -- 1.8 cm, current
I
150-to 70 mA,, voltage -- 600 V, air pressure -- 0.4 to 0.65 torr.
[Under these conditions the polycrystalline films were deposited at a
Irate of 500 -- 600 o/min. The resistivity of CdO f1lms measi~-red by
.1the four-probe method amounted to (3.2 -- 6.4) x 10-3 ohm-cm, which
oes not contradict the data in the literature, and was temperature
jindependent between -100 and 70C. The spectral dependence of the
itransmission coefficient was obtained. The volt-ampere characteris-
I
itics.of CdS films with CdO contacts were obtained at various temper-
:ature and- illuminations. An investigation of the distribution of the
Potential along the CdS film with CdO contacts showed that the
I
Zradient of-the potential decreases near the contacts. These results
!and also data on the noise characteristics of the contacts indicate
!that they are ohmic. Orig. art. has: 4 figures and 1 table.
ISUB CODE: 20/ SUBM DATE: 05Mar65/ ORIG REF: -0031 OTH REF: 004

ACCESSION NR: AP4040934 S/0185/64/009/006/0648/0658
AUTHORt Gry*bny*kov, Z, 8, (Gribnikov,, Z. S.), Tkhory*kpYu-..__O. (Tkhorikp Tu. A.
TITLEt Transient processes of storage and decay of nonequilibrium carriersIn
semiconductor diodes
SOURCE: Ukrayirwlk]r*y fizy*chny*y zhurnal, ve 9#'no~ 6, 19649 648-659
TOM TAGSi Semiconductor diodes nonequilibrium carrierl transient decayt
transient diode decay, transient diode storage, p-n'Junction,, diode performance
ABSTRACTs Transient processes are considered in semiconductor diodes when the
It is
current through the diode is given.(forward bias on the p-n junction).
shown that when the width of the base is emall, the time dependence of the m1nority.
carrier density is described by a simple exponential function; for this function
the time constant is calculfited with various recombination velocities on the
unrectifying contacts and emitter efficiencies. Time dependences of this density
were also obtained with different base widths, The recovery time ve Jf was calcu-
lated for different base widths,, emitter efficiencies and recombination velocitiesel
Origo art* hae 21 numbered Gq"tionsi, 5 graphs and an appendix.,
Card 2/2..

ACCESSION NRs AP4040934
t6piypmMro,*kiv AN QaGSR~ Kiev (Iwtituto
ASSOCIATION$ lwty*tut for
Semiconductorep AN UkrSSR)
ENCLs 00
SUBJU=l owan"
SUB CODEs NO MW SOVs OG4 orHER1 004

KOTEITKO, A.D. ; Mq.RLISLkK
N, , t
First-year students of a pedagogical institute stud7 techniques
of measurement. Politekh. obuch. no.8-.67-68 Ag t59.
(MIRA 12:10)
1.Pedagogicheski7 institut, g. Vinnitea.
(Measuring instruments)

GLADYSH, Vladimir Vikentlyevich, inzh.; GLIK, Arnolld Konstantinovich, inzh.;
SAKHAROV, Grigoriy Grigorl_vevich,-inzh.;.TKHORZflr-,VSKIY, Dmitriy Ale-
gp4Kovich,_ inzh.; MAKOVSKIY, G.M., inzh... re ; OSIP IVA', -.A-,--red-,;-
izd-va; CHERNOVA, Z.I., tekhn. red.
(Technology of the production of rolling mill equipment) Tekhnologiia
proizvodst7a prokatnogo oborudovaniia. By V.V.Gladysh i dr. Moskva,
Goo. nauchno-takhn. izd-vo mashinostroit. lit-ryg 1960. 288 p.
(KIRA 14:9)
(Rolling mil-1s) (Machinery industry)

DIOMIN, A.I., nauchnyy sotr.; P]~LIPENKO, Yu.p.(Pylyperiko, IU.P.1,
prepodavatell sredney sholy; TK'HORZHEVSKIL - D, 0
red.; SHEVCHZW, L.I., tekhn.red.
[Tkhombevolkyl, D.O.)
(Classes in fitting and repairing; tractor repair]Uroki z
sliusaimo-remontnoi spravy; remont traktora. Za red. K.I.
Sl%vetsova. Kyiv, Radianolka shkola, 1962. 74 P.
(MIRA 16:3)
1. Nauchno-isoledovatellskiy institut peagogilci [lkr.SSR (for
Dlomin).
(Tractors--Maintenance and repair)

I t~ ) jx~ I V 1, C , d
-[ /- t-) (7, K~, f/ f-,--
TMIORZHVSKIY 0 --- -
------
On a problem related to the method of frequency measurements
solved by the application of low-frequency RG filters. Trudy
VNIIM no.28:84-89 156. (KIM 10:12)
(Yrequency measurements) (3lectric filters)

GTRSPI, Vol. 5 No. 1 Jan. 1952
1 1 --i, k .; 11. O.A. -swl Sh,-mbel'. H.K.
I i., 'if " fuli, qi%ciilator by a harmonic of the fundamental frequency
/h-srt-l 1 14him fi-koi Fizi~i 17, Z15- ia (1947)
T"N-SLATI '..5 ;VI.IIJ.Br,E AT BROCKHAVEN NATIAAL LADORATORY