SCIENTIFIC ABSTRACT TSINZERLING, YE.V. - TSIOVKIN, YU.N.

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December 31, 1967
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SCIENTIFIC ABSTRACT
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- ---- - . - TSINZ M ING. Ye.Y. -- Zonary structure twinning of quartz. Dokl.AN SSSR 94 no.6:1079- 1080 F '54. (HIaA 7:2) 1. Institut kirstallografii Akademii nauk SSSR. (Quartz) (Crystallography) Artitcul eariftfition of the-vructue M1,gInOL N9W--,T T,i,uvrlinK. O,d. S7, 'N-e( fqi7: 90. CA . 44, 2Scv;-~, - -11,e, t,,- ht,cl d~:;z-nst!atxd Fhat D,-~uphip.~ t,innnig lamrit:,i ill 1,,:,,tj .-An J~ --j t,y h, aing t~, in an t!e~. ti"I'l I 'efcctrolytic rm,lfy- inj,"), Th, ~tnhfli~jlon Q1 fli., 'nov-7y". J,, V~ much iln:reased tilat it I-omnletely tosc'i M ability to form V,ins und,r mcch. metions, e.g. tmsion. Thig clec. method is ttn sisir,ble f.,,r ory~t-.ljs %hich ;lr,! niilv difficultly cliangt4 by ordinary metholiq in tht~tr 1,vir,ning ciiz ractcrirfic~. c,g. by litatilig and cuoling, or under tomon. The DauphiniS vo,irl l2nicDas are easily detf:ctul in quartz Ify etching pul- hhtd ~,uctions of rhornboheJral orientation with IIF. The pl~'v;,- behavior -)f the pttrifmd crystals is ninch hiferlor to Th:.t --! the ,y5tl,lq uol elecui,Av truat,& Th;-~ jbcrv;l- tion 6 in 1111"Plailm! contradiction t4j dic pr-wil'sly Ok- .-n,od fact th-,t particnladv purt natural quartz crystals -r~ much murt pla3tic tnarl thurc in ill,! tout.-uninated state. W. Eitc-I TSINURLING, Ye.V. Stabilization of quArtz lattices having zonar7 structures. ]Dokl. AN SSSR 95 no.4:801-803 Ap 134. NLRA 70) 1. In8titut kristallografii Alcademii nauk SSSR. (Quarts) (Crystallography) ACCESSION NR: AP4043193 S/0070/64/009/004/0565/0567 AUTHORS: Tsinzerling, Ye. V.; Mironova, Z. A. TITLE: Displ~y of dislocations in quartz by etching in an autoclave SOURCE: Kristallografiya, v.~9, no. 1964, 565-567 TOPIC TAGS: quartz crystal, etched crystal, dislocation net, crys- tal growth ABSTRACT: It has been found that etching in an autoclave can show up dislocations even on a cut surface of synthetic quartz. Etch figures of dislocation loops were observed on natural and synthetic quartz by the following method: The'autoclave was filled 40--50% with a solution saturated with sodium carbonate or a mixture of the latter and alkali or borax, and the pressure was varied between 40 and 140 atm. The temperature was varied between 200 and 3500C. The experijknt lasted 1.5--3 hours. Etching in a saturated solution of Card 1/2 i- ACCESSION NR: AP4043193 sodium carbonate yields small but sufficiently clear etch pits. A mixture of equal parts of an NaC03 solution and a borax solution gives rise to a film which cannot be removed and prevents a clear view of the etch pits. Etching with a 5% solution of NaCo 3 and a 1% solution of NaOH does not yield sharply defined etch pits on all types of quartz. Two halves of the same cut, one etched by the meth- od described above and the other by the usual method with a selective etchant (H.F with H3BO3) at room temperature and atmospheric pressure, exhibited etch figures that were mirror images of each other. This indicates that they are due to a dislocation. Orig. art. has: 2 figures. ASSOCIATION: Institut kristallografii AN SSSR (Institute of Crys- tallography.' AN SSSR) SUBMITTED: 09Mar64 ENCL: 00 SUB CODE: 66 NR PLEF SOV: 001 OTHER: 005 Card 2/2 TSIrAMMBGt Yeov* - Twinning of quartz by twist deformation. Trudy Inst.krist.no.11: 165-171 '55. (MLRA 9:6) (Quartz) (Dislocations in crystals) IV USSR/Solid State Physics Mechanical Properties of Crystals E-10 and Polycrystalline Compounds. Ab;3 Jour : Referat Zhur - Fizika, No 5, 1957, 11934 Author : Tainzerling, Ye V. Perekalina, Z.B. Inst Title Strength of Quartz in Twisting. Orig Pub Tr. In-ta krietallogr. AN SSSR, 1955, v'YP- 11, 172-176 Abstract No abstract. Card 1/1 Getogory ; UssRISolia Stato Fliyssicn of Gryrtpls. E-7 Crystnllizntion f,b5 Jour I RoP 2hur - Fi7ikr, "0 5z, 19571 -0 (1719 Author Tsin-crlin- "'o V Title ~n-~.T~wiming of with 'L'o-nel md Sectoriel Structure by Veans of thc Trcnsfor~~rtion :'ethod Ss' , lcr'~), vyp, 12, Va-143 Orig lub Tr. in-ta kri!-tr1lorr. ,-,f 9 li Abotrtet The irreallUlaritics in the interml structure of a quartz hrvinr,r P_ zo-nal or soctoriol coloring exert a retarding ef- I transfomation. The twins are loct on the twinninr bvrA.=:!r_ nucleated end grow firrt in the bright rogions that have the least tnpurities. The of separation of the dif- ferently colorod regions erc, b~_,rrierr for the twins, and to overcorIe these barriers it is necessary to have an addition- el expenditure of energy. 'I rogillpr distribution of twins, encompassing th~_' contcr'inetcd sections, is rea-rhod by rultiple repetition of tllc,A _Z~_'~ tr-~nsforr-.ation. Card 1/1 FAVORSKAYA, M.A.; TSIMMING. Ye.V. Metamorphism of quartz from an ore vein on contact with a porphyr1te dike. Zap. Voss. min. ob-va 66 no.4:488-495 '57. (HIRA 11:1) l.Inatitut geologii rudnykh mestorozhdeniyg petrografti, minera- logii i geokhimii i Inatitut kristallografii AN SSSR, Moskva. (Rocks, Crystalline and metamorphic) TSINZERLIIIG, Ye.V.; MIRONOVA, Z.A. Exposure of dislocations in quartz by the auroclave etching method. Kristallografiia 9 no-4:565-567 Jl-Ag f64. (MIRIA 17:11) 1. Institut kristallografii AN SSSR. TSINZERLING, Ye.V.; VOLISKAYA, O.B. Determining the sign of rotation of rhe -niarization plane in quartz from the etching figures on th baSe, "ristallo.graftia 10 no.ltll6-118 Ja-F 165. (MIRA 18:3) 1. Institut kristallografli AN SSSR. TSINZERLING, Ye.V. Elongated cavities in quartz. Zap. Vses. min. ol-va 93 no-3: 342-348 164. (Mru :B-:31 j TSINZERLING, YO.V. Silver dendritees produced on quartz 4n an electric., f-JeL'. Kristallograflia 10 no.3:368-370 14~-je 10'5. (MIFJ~ ji',:7) 1. Institut kristallografli AN SSSR. TSI17ZERlINGp. Ye,V.; MIRONOVA, Z.A. Disclosure of dislocations in quartz by the method of selec- tive etching. Kristallografiia 8 no*18117-120 Ja-Ft63 (MIRA 17r7) 1. Institut kristallografii AN SSSR. TSINZFRLING,.Ye.V. Effect of Li, Ila, Ge, Al impurities on twinning in synthetic quartz. Kristallograftia 9 no.1:69-73 Ja-F 164. (MIRA 17:3) 1. Institut kristallografii AN SSSR. ACCSWION NR;. AP4012276 3/0070/64/009/001/0069/0073 AUTHORi Tainzorlings Yee V* TITLEt The effect of Lip Nap Go, and Al impurities on twinning in synthetic quartz SOURCEs Kriatallograftyap ve 9p no. 1p 1964,0 69-73 TOPIC TAGS: impurity, Lip Nap Gep Al, twinning, quartzp synthetic quartz., artificial quartzp structural -impurity., isomorphous replacementp impurity injection ABSrRACT -. The author's previous work indicates that twinning in quartz is due to internal morphologyp but it has not been-clear what impurities might affect this twinning,, how much impurity will enter the quartz structure., in what state the impurity may be injectedp or what structural changes may hinder the twinning of injected quartz. The purpose of the present study was to shed light on this prob- lem. Na and Li are not structural impurities., because their ions occupy structural holes. These experiments have shown that the presence of Na and Li ions in quartz, in either alpha or beta modifications) does not Interfere with the twinning pattexr~ whether the ions are introduced during growth of the crystal or are injected into fully developed crystals. Go and Al, on the other hand, are structural impuritiesp Card I/J ACCESSION HR: AP4012276 since they isomorphously repla *ce Si in the silica tetrahedrons of the quartz lattice, The two elements are differently incorporated by the different pyramids of growth, Crystals with the smallest amount of Ge twin easily, according to a definite pattern. Crystals with the largest amounts of Go show no clear pattern of twinning, and some specimens twin only with difficulty. Twinning in association with Al depends markedly on the orientation of growth of the crystal. For crystals grown along (0001) the Al occupies structural holeso and thus changes only the lattice parameter a. Plates of these crystals twin according to a definite patt=,j regardless of the amount'of A120 3* But crystals grown along the rhombohedral pyramid exhibit much greater sen-itivity to the quantity of AYY With small amounts of the Ainpurity, twinning occurs easily,, ignoring the fa: es of the seed crystal. But with amounts of 0.07-0.08,--,, A122_3 the plates remain monocrystalline. "In conclusion I express my thanks to V, Fe Bu-tuzov and L. 1j, Tsinober for pro- paring the synthetic quartz crystals, to 0. B. Vollskaya and L. A. Solomentsevaya for taking the photographs, to L. G. Chentsovaya for her interest in the work, and A. Frank to V -Kamenetskiy and 1. Ye. Kamentsev for providing data on measurements of lattice parameters of the quartz samples I investigated." Orige art, has; 7 figures. Card 2/3 A00YA010M M AP4012276 ASSOCIAMONt Institut kristalloeraf ii AN _SSSk -(Institute of Crystallography AN WSR) SnMnTEDt 26Jun63 DATE ACQt 19Feb64 LNG L 1 00. SUB CODE: PH NO REF~SM 008 OTHER: 006 Card 3/3 S/07o/63/008/001/022/024 E132/E46O AUTHORS: Tsinzerling, Y6,V., Mironova. Z.A. TITLE: Revealing dislocations in quartz by the method of selective etching FERIOVICAL: Kristallografiya, v.8, no.1, 1963, 117-120 TEXT: The usual etch for quartz, known since 1855, is HF Benerated by CaF2 and sulphuric acid. Solutions of sodium or poLassium carbonates at 125 to 150% also*etch slowly. Other etches, potassium sulphate with KF, metaphosphoric acid with N'1011, borax, potassium anti magnesium carbonates etc, are known -and have various etching characteristics. Attempts have now been made to reduce the activity of HF to make a selective etch. Two successful mixtures were: (1) 4094 HF in water (time of etching 2 to 3 hours) and (2) the same mixture with boric acid in the ratio of 10:1 (time of etching 3 to 20 hours). The activity can be further decreased by using equal parts of the two acids. The points of emergence of dislocations can be detected as large etch pits an a background of smaller pits. Etch pits connected with deformation and with the a-0 trausformation were also found. There are 4 figures. Card 1/2 S/07o/63/008/001/022/024 Revealing dislocations ... E132/E46o ASSOCIATION: Institut kristallogretfii AN SSSR (Institute of Crystallography AS USSR) SUBMITTED: MaY 3, 1962 Card 2/2