SCIENTIFIC ABSTRACT VECSERNYES, L. - VECSEY, Z.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001859220009-5
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: September 1, 2001
• Sequence Number: 9
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

S/081/62/000/001/023/067
B151/B101
AUTHOR. Vecserny~s, L,
TITLE: Determination of micro-impurities in silicon tetrachloride
PERIODICAI.; Referativnyy zhurnal. Khimiya, no. 1, 1962, 154,
abstract 1D134 (Acta chim. Aced. scient. hung.
v. 2a, nos. 1-3, 1961, 111-114)
TEXT: Three methods are described for determining the impurities in SiCl 4'
1. The analysis is carried out using the absorption spectrum of SiCl,
The maximum absorption is found in the region 360 - 400 m1L and its position
varies in dependence on the impurities present. 2. The SiCl 4 is first
vaporized and the dry residue is subjected to emission spectrum analysis.
The vaporization is carried out in a special apparatus where the sample of
the material to be analyzed is introduced in drops into the cup of a carbon
electrode. This is enclosed in a box ttwough which a current of dry 11 2 or Ar
Gard 1/3

310811621000"/00',/023/067
Determination of micro- B151/B101
is passed. The rate of the process is regulated so that equilibrium is
facilit-ated between the accumulation and vaporization of the SiCl,V For one
determination 10 ml SiCl are vaporized. The end of the electrode is
4
treated with BiCl The spectrum of the dry residue is excited in an
3'
interrupted are (ratio of charge time to pause 1 3) with a current of B a
and photographed using an -22 (ISP -22) spectrograph, with an exposure
of 240. sec. This method makes it possible to detect B, Ca, Cu, Mg and Fe
impurities in SM 4. The semi-quantitative determination of Fe is carried
out using the pair Fe 3047.6 -Bi 3076-7 a. 3. The sample to be studied is
subjected to coagulation and the emission spectrum of the silicic acid gel
studied. For this purpose 20 ml of redistilled 11 20 are added to A, ml SiCl4
and 40 ml CU with ice cooling and intensive mixing. The separation of the
4
silicic acid occurs in about 10 min. The solution is subjected to
decantation and the residue is mixed for an hour with 20 ml of redistilled,
H 0 and dried for 24 hrs at 900 C. The dry residue is ground up and
2
Card 2/3

Determination of micro-
introduced into the channel of a carbon electrode.
in a:n interrupted are in an Ar atmosphere.
to detect the impurities Ag, Al, As, B, Ca,
Abstracter's note: Complete translation.'~'
L. -
Card 3/3
s/oal/62/000/001/023/067
B151/3101
The spectra are excited
This method makes it possible
Cu, Mg, and Sb'in the SiClV

L 01113-1-66 EWPW/EWP(b)/EWP(e)/EWPW JJP(c) JD
ACCESSION M: AP30238o6 IiU/0005/65/c)-tl/f;C6/~-'~-"1/0233
AUTHOR: Vocsernyes, Lajoss, Hangos, Istvan
TITLE: Speatrochemical determination of trace boron contaminants in SiC14 art'l
SiHC1.3
SOURCE: Magyar kemlai folyoirat, v- 71, no. 6, 1965. 231-233
TOPIC TAGS: spectrographic analysis, microchemical analysis, boron, silicon
compound, germanium compound, chloride, hydrogen chloride
A13STRACT: The method described is suitable for the determination of boron
traces (in concentrations of 10-9 to 10-5 g./g. sample) in SiC14, GeC14,
and SiHC13. The technique involves treatment with tripheny1chloromethane
to enrich the boron content in the form of a complex, spectrographic de-
termination of the boron content of the complex, and calculation of the*
boron content from the spectrogram. The operations involved were descri-
bed in detail. For the preparation of the standard, tria(trimethylailyl -
boride), a high-molecular weight compound capable of forming complexes '
with triphenylchlo'romethane, was employed., Orige am@ has- 3 formulas, 2 graphs.
Card 1/2

L 01183-66
ACCESSION NR: AP5025806
ASSOCIATION: Tavkozlesi Kutato Intezet, Badapest (Research Institute for
Tole commmications)
SUBMITTEM 14Aug63
NR REF SM 001
ENCL: 00
OTIM: 006
SUB CODEv IC, GC
JPR$

VECaERIffES, Lajos; ZONIBORI, V.
Spectrochemical analysis of SiC14. Chem aryil ? no.2;429-14-,-4 ~ 6L,
1. TavkUzlesi Kutato Intezet, Budapest.

V-ECSZYJ A.
Testing with the view to manufacturing cables with cold-welded alutninum sheaths.
P. 508. (KCHASZATI U?OK.) (Iludapest, Hungary) Vol. 12, No. 11/12, Nov./Dec. 1957
SO: Monthly Index of East European Accession (ELAI) LC. Vol. 7, No. 5, 1958

VECSEY, Agqp~qn
Experiments in manufRcturincr cold-we)dp~d alumin=-sheathed
0
cables. Koh lap 12 no. 11/12 �W-510~ N-D '57.

VECSEY, Agoston., oklevelea,gepeszmernok
Production development trends in the Hungarian heavy-current
cable and electric line manufactured; cooperation with the
Council for Mutual Economic Assistance countries. Villamossag
8 no.2-3t73-81 F-Mr 060.
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