SCIENTIFIC ABSTRACT VERGUNAS, F.I. - VERIGIN, N.N.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001859510006-6
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: September 1, 2001
• Sequence Number: 6
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

ACOSSSICH NRs AP4041715
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FYP-quencY dePendence of tgS and 'W fOV luminor EL-460 at diffennt-. teMeratures:
Ts OK,.,a.-,G00 b got loot -I- 1]L39 l)-ile, e - 123#'X- 2636 8- 2930 328
continuation of enclomwe #2

.Card 6/6

ACCESSION Nlt*. AP14032877 8/0051/64/C'16/004/0708/0709
AUMOR: Vergunas, 17. 1. 1Koldt1cov`jV.V. I Yuhinjg.M.; Smirnova, L. I,
TITLE: Some propertics of film typo olectroluminescont capaitors
:SbURCE- Optik.L L spektroskopiya, v.16, no.4, 1964, 708-709
!TOPIC TAGS: clectrolumineaconco, oloctroluminoscont capacitor', zinc compound,
electroluminophor
ABSTRACT- The authors prepared and tested film type electroluminescent capacitors.
The films wore obtained by vacuum sublimation of yellow EL-580 electroluminophor
.(a zinc sulfide phosphor - composition not specified). There were pre red low-vol-,
stage and high-voltago film capacitors; the latter differed from tb otmor by the
presence of a dielectric 3:ayer between the sublimated film and the electrode. The
~films were about I micron thick; the electrodes were made of SnO2 and Al. The vari-:
,ation of brightness as a function of the applied voltage is shown in the figure
t(Enclosure 01). As regards both thoiri voltage and frequency characteristics the low
:and high-v6ltage capacitors differed from each other and from power-filled conven-
;tional capacitors. The low-voltaga capacitors rectified the current in the range of
low voltages. frequency dep3ndenco of the brightness is concerned the low-Vol"
Card 1/3

'ACCESSION HR: AP4032077
:tage films are characterized by a horizontal curve (the brightness to frequency in-;,
dependent); the high-voltage capacitors by a rising straight line; the powder capa--
citofa by a curve with a flat maximum. None of the film capacitors exhibited photo-,
Imid nascence. under stimulation by 354 and 310 mp radiation. Investigation of the
j brightness waves showed that the films have only one principal peak in phase with
the voltage. For f ilms with a thick dielectric layer the peak 'was observed f or both
;polarities; for tht film with a thini dielectric layer the brighftwas peak is'
;evinced only when the Al elecirode is negative. Orig.artehas:1 figures.
;ASSOCIATION: none
I SUBMITTED: l5Jul63 DATE ACQ: 07May64 ENCL: 01
;SIM COM OP, Be NR REP'SOV: 000 OTM 001~
Card -2/3

ACCESSIOUNR-i AP4032877
Igo
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Variation of brightness B with voltage V: a) low-voltage film,
b) powders o) high-voltago film with thick dielectric layer,
d). film with thin dioloctric layor.
Card 3/3

. P~GUIIASI ?.I.; YENIEKEY-MA, K.5b..
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Diclectri a and Ph -f si-r-: nlllf 1 ~'- . - - .1 - - I---
tro-laminophors. F-tz. tver. tF.%Ia 6 n:;. J1
"',KRA 17.-7-0)
1. (crtkovskiy gosudarv-vennyy univereilet, -4mn-'.

ACI: NR,---KP6013(X;S SCUMS CODE: UV66;iS 76/036AF04/0616/06
/6
AUTHOR: Vergunq~,,..F.1.; q~
ORG*. None
TXVX: -Ag_ivg of ZnS.-Qu:k1q film elect ro2uninescent capacitors Aepo-t, ZN~Oe uk-
=_i~osco -
~Cowtaronrae onL -nce hold inAkm 2~ Sept t?qi! -
cq_
SCUMS: AN SS-O;a. Izvestiyaq Soriya fizichesknyc, v. 33, no. 4, 1066, 616-617
TOPIC TAGS: electroluminesconce, zinc sulfide, aging,$-., CTU40--
T11
AOSTRACT: The alm of the work was to Investigate the vmriation of the effective hall-
life of ZnS;Cu.Mr, oleotrolt=inesceut capacitors an a function of the operating regime
and some other technological factors. Specifically, there were studied the fatigue
1,rdiminution of brightness) and irreversible (intrinsio) aging as described by Robertts
:!ormula. The elvetric and optic characteristics of the samples were measured in a
,jacuum of 10-5 =i Hg. The most potent aging factor wis found to be noifiture: 601.1
:=idity reduced the half-life by a factor of 10 as c:)mpared with the half-life In
'vacuum. Tests of various direct seEilants showed, howaver, that most of them liquidatca
the elect rolwaintisconce in that the sealants over the films reduced the breakdown volt-~'
age to below the value for the begirming of luminescence of unprotected films. An i
exception was the hermetic sealing compound designated KLT-30, which no-t Only increased.-
tho life substantially, but actually enhanced the electroluninescezu:e. The exporimenta2,

ACC NRt AP601306,5
dkita obtained at different frequencies of the exciting field are tabulated. The half-
11to decreased with increase of the field frequency: approximately equal deteriorations
were observed for an equal number of voltage cycles. 'rho half-life also decreased with
increase of the initial brightness a.ad with decrooqe of the film thickness (slowly in
ithe thickness rangc from 1.5 to 0.5 nicrons and then rapidly In the range from 0.5 to
';,O.1 microns. The voltage required to obtain a given brightness doos not depend on the
'film thickness in %he 1.5 to 0.75 micron range, but mounts rapidly with further reduc-
ition of the thic~mvsa. The life also depends on the c(xsposition of the phosphor batch:
roduct ion of the Cu content shortens the half -life. Aring of the films leads not only
to diminution of tLe brightness but elso to reduction ai! the do conductivity and
changes in other pe,raw tars; for example, with age the voltage dependence of the bright-
~ness becomes steeper, while the frequency dependence of the brightness becomess flatter.
10r:Lg. art. has: 1 table.
ISUII ClIDE: 20/ SOMME: 00/ ORIG REF: 000/ OM IW: 000

L_26h86&_ - - T,.P(,--) m - -
ACC 1.1064 Source CQ19: - UVMS/66/03(1/004/0614/06 M
ALrHOR:. Verguniej F. k.; )Le ~ka Lva, K. Sh.
qj
OTO; None
TITLE: Comparison: of the optic ard dielectric properties of powqorN ZMS electro-
luminophors Aeport, Fourteenth Cogference oa LumiiLcscende hold in iiii7vis, 3
-P
,Soutember 197657
CUWE; AN SSSF;. Izvestiya. Serlya fizicheskaya, v. 30, no. 4, 1966, 614-615
TOPIC TAGS: zinc sulfide, dielectric property, conductivity, optic property.,
P"
ABSTRACT: In investigating the chamges in the dielectric properties of powdered zinc
sulfide elect roluminophors under the Influence of high fields the a-4thors discovered
what they term the realdual dielectric effect of electrol=inescence: after cutoff of
the electroluminescence-exciting voltage the frequency dependences of the weak-field
dielectric properties exhibit a peak of tan 6 and a corresponding dispersion of the
capacitance C. Investigations have demonstrated that this effect In dtka to re3idual
conductivity, which in ' ffed" by traps that become filled In the process of electro-
Imainescence and are located in the vicinity of the active regions of the US grains.
Ueasuroments of the effect showed that the residual conductivity at - 1900 C differs
little from that obtaining at room temperature. The residual conductivity versus
LCard

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7~CC NRt AWO-5064
-exciting voltago-curva goes through a maximum; the variation of the residual conduct-
ivIty parallels the variation of the light sun S stored In the phosphor during electro-
stimulation, ,which Is to be expoctod In view of the inference that tAo residual con-
duativity is "fed" by the stored onergy. The observcd results are J-Jxtaposed with the
data of A.N.Goor obiani and U.VFol, (no reference given) on the depth of the traps in-
volved in formation of brightness wwres; it Is coneltzled that some ol the same traps
participate in both effects. Or44 art. has: I figure ard I formulin~
SUB CCDE*. 20/ SUEU DATE: 00/ ORIG MW: GOO/ OW REF: 000
Gard 2/2

2164f,;2-66 W I EWT( )/EWq)L_(q
r (III U -, Am up -L
013066 SOUICS CQDS*. UIV0048/661030,1004/0618/0619
iAUVOR: Danilova. N.
Kolotkov Y.; YqLhin, 3 Xt; La
iom: None
i 0 _Y? 1/1
~Tl'=: Concerning the mechanism of olectrolwinesconce of ZnS:Qg:Un film capacitors
/Ruport. Fourteenth Coif-orence (in Mminescence hold in Rlga,16-23 ie-pEe-31ber 19657
SOLMS: AN SSSR. Izvestlya. Seriya fizicheakaya, v. 30, no* 4$ 1966, 618-619
TOPIC TAGS: ele(stroluminescence, crystal phosphor, zinc sulfLdeJ..bA1Z114&'-'
'iAX"$R"AGT":- -The - purpose- of --the - work v R__5_--toeW4Aaate_
the nature of tha electroluminesc-
!ence mechanism Irt electroluninophor filmse For the experiments there were prepared
11conventional" film capacitors'eonsisting of glass plates with successive layers of
3n02, sublimated ZnS:Cu:Lfn, dielectric (100 to 200 A layer of SiO), and Al (electrode).
i'.omparison with the results obtained in studying powders of the same phosphor Indicatedl
I
;that the olectrolumluescence mechanlam in the films is different fron the mechanism In
,.pomlers: whereas in powders excitation and emission occur during diVereat half-poriods
illn films both processes obtain durti4r the same half-period. An a result of analysis of
Ii.he experimental data it to concluded that the follorming series of proceases are La-
irolved in the eleotroluminescence of ZnS. Un
Cu: films: injection of electrons :into the
'ZnS from the Sn02 or extraction of elLectrons from thi sublimate (depording on the volt-

1, 26h82-66
ACC NRt AP6013066
~00-a half-cycle), Impact ionization of the lattice, build-up or storage of electrons In
it
ho vicinity of the anodo, and, finally$ recombination of the electrons with holes,
by luminescence. A figure shows the voltage dependences of the brightness
and the rectified current; the two curves in logarithmic coordinates are approximately
.p&rallel. Orig. art. has: 2 figures.
SUB CODS: 20/ SUEU DATE: 00/ ORIG REF: COO/ OrH W: 000
Card 2/2

E!Rsw SIR
V A65.66 rdW/E4PW/ET1 UP(c) JD
F Xc NRI AP6013063 SOUXE CCDE: UM0048/66/030/004/0612/0613
AuTHOR: v na4j,,&_Z-X.; Yashin, E.U.; Kolotkov, V.V.; Danilova, M.L.
ORG
None
TIT -of capacitorn and -the- inl luencb
LE.---:Preparation _.MR t;1-AlLelectrolual *nescent
of some parameters on their characl:eristics /-Report. Fourteenth Conference on
SOME: AN SSSR. Izvestiya. Seriya fizichoskaya, v. 30, no. 4, 1966, 612-613
TOPIC TAGS: olectroluminescence, zinc sulfide, crystal phosphor, /,-t*,
ABSTRACT: The rum capacitors were prepared by vacuum sublimation of the ZnS:Cu:un
phosphor onto glass plates precoated with SR02 (transparency 85%; rosistanco 5 to 50
Ohm), annealing of the subliL,ate coated plates, and successive evaporation of a layer I
o:e SiO and an electrode layer of Al. All the operations, including the subsequent
measurements of the optical and electric characteristics were carriled out without bread
In- the vacuum. The variation of brightness D with the voltage V was characterized by IL
a paaor f unrtion: B 4- V09. Plots of log E versus loe, E (E is the f iold 9t rang-th) were
ostl tra ght lines; except that the plots for thinner films showt.,d a bond (decrease
~
In slyop~) in the range of high current (high field) values. The frcquevcy dependence
f B is also characterized by a power function: 13 - 10. As a result of heating of the
I Card 1/2

-7-
7-7
ACC NR: AP6013063
films the resistance of the Sn02 lwrer decreased, the decrease being greater for greate"t
US layer thicknesses; the increase In resistance, I.e., the annealing, hrA little
exponents (X and 13. In the absence of a dielectric (SiO2) interlayer be-
twoon the film ond the Al, the films did not lualmosce. The effect of film thickness
is evinced mainly in shift of the log B versus loC-., 9 plats along tb3 log E axis with
little or no chenge In slope, I.e., a is almost independent of the film thickness
(except in the, range of thin film ard strong fields). With variation of the Cu and
n contents In the batch the breakdown voltage and the brightness vary along a curve
ith a broad maximum, I.e., the log 0 versus log V plots shift alcng the log V axis.
his made it posisible to realize film of optimum brightness; these were also charac-
rized by good reproducibility. Ibin (0.13 p) film yielded up tc,20 nit at 9.8 V and
00 nit at 20 V; thick film (0.7 IA) yielded 20 nit at 39 V and as much as 5100 nit at
U)
a pro-broakilarn voltage of 84 V. Orig. art, has: 3 figures,
th
~SUB CCIDE:- ----SUBM DATE,- --------OM-,EMFt- _000
Card 2/2

M_
L_2L400-66 EWT(m)/EWP(t)/ETI
ACC N& AP6018779
IJP(c) JD
SOURCE CODE: UR/0070/66/011/003/047
V
:AUTHOR: Vergunas, F. I.; Mingazin, T. A.; ~mirnova - Abdly v,__S
L Ye. M. ,
ORG: none V
TITLE: Texture and electrical conductivity of cadmium sulfide sheets
SOURCE: Kristallografiya, v. 11, no. 3, 1966, 471-472
TOPIC TAGS: cadmium sulfide, electric conductivity, crystal orientation, wWhzftvAF~*
temperature dependence, photosensitivity
ABSTRACT: The (I ffect of substrate temperatures on structure formation in photosensi-
tive CdS films\was studied and correlations between electrical conductivity and the de-
gree of crystal orientation were obtained. Samples were obtained by vacuum sublimation
(2-10 5 mm Hg) vhere the substrate temperature (TP) varied from 75 to 4000C. Cu was
added to increase the photosensitivity by treating the surfaces with a Cd-CuCl powder
and annealing for one hour in Ar. Indiun electrodes were evaporated into the surfaces
to measure the electrical conductivity. The structure and grain orientation of the
films were determined by x-rays and by a phocomethod. All of the films had a grain
size of about 10 5 cm and were composed of a-modified CdS. In the temperature interval
of 150-4000C, the crystals had their c axis oriented perpendicular to the plane of the
substrate. The activation treatment (Cu addition) resulted in coarser crystals (2 to
UDC: 548.0 : 537.311

L 36400-66
ACC NR: AP6018779
5 p) and in a decrease In the orientation for all values of T except for 2500C, where
P
the orientation rose sharply. The electrical parameters measured the concentration of
current carriers for both dark and light conductivity. In all cases, the greater the
orientation the greater was the conductivity, indicating an anisotropic conductivity
mechanism; the conductivity was much greater perpendicular to the c axis than parallel
to it. Along the a axis the barrier potential for current carriers was high, but de-
creased with exposure to light. The barrier distance was estimated to be below 10-5
cm, indicating that the barriers 4,ere acting within grains. Orig. art. has: 1 figure.
SUB CODE: 1.1,09/ SUBM DATE: 05Apr65/ ORIG REr: 001/ OTH REF~ 005

L.Z'
_)501-w66 VT( )Affjnl
ACC NRt AP6013062 SOUWE CCDE: Ult/004a/66/030/004/0610/0611
AUZIOR: Vergunas ,1. Skobelltayan, N. A.
OFG: None
TITLE: The photodiolcoWic offe~t In ZnS:Ag. crystal phosph"r fReport, :Fouxteenth
conference on Lu.mZ-o-sc-e-n-c-e-Reld in Riga,16-23 September 1965/
SOUWE: AN sSSR. Izvestiya. Seriya lizicheskaya, v. 30, no. 4, 1966, 610-611
TOPIC TAGS: crystal phosphor, zinc aulfide, dielectric loss, photodieleatric offect
ABSTRACT: The photodielectric effect (PDE), which consists in increase of the dL-
electric constant (i.e., the capacitance of the measuring capacitor) and change of
the loss tangent of crystal phosphorts under the action of ultraviolet irradiation, ma
be due either to trapped electrons (type I FDR) or conductance in an inhomcgeneoUs
speeimen (type I PDE). In an earlier paper F.I.Vorgunas and G.H.Hallcin Waklady AN
SSSR, 137, 560, 1961) adduced tho criteria or indications for distinguishing between
PDE I and PBE 11. In experimental studies of several ZaS phosphors .,.he authors 1 group
detected only PDE II ME I was evinced within the limits of the exporims-atal orror if
at all); P.Krispin (Physica Status Sol. 3, 81, 1963), however, demonatrated the exist-
once of PDE I in ZnS:Ag phosphor. Accordingly, the present work was can--orned with
investigation of the WE in this cryiital phosphor. The experimental pro--edure was the
-Card-

L 2S50li-66
ACC NRs. AP6013062
41
At, P~)
off$
W
if
-fix-
log f. too rof CGOO
fw Are me x, -,y
Fig. 1 Fig. 2
Fig.. 1. Frequency dependences of tan (curves 1-3) and A C (4) at difforent values
of the UV intensity E and temperature T: 1) E 100%, T 3130K, 2) E 39%, T 3130K
3) H' 39% , T to 2030K , 4) 9 sa 100% , Ta SOOK.
-Fig. -- 2. --Dependeumes of -8 , tan -6 and - IkC on 8 (1) # T (2) #:and -the time- of UV irradia-
tion (3).
Cned 213

1 '.8501-66
ACC NRi APGQ130Q
samo as described earlier (F.I.Vergurias and K.Sh.Yenikeyeva, Izv. An SSSR, 3er. fiz.,
26, 475, 1962). ',iho phosphor was stimulated by the 365 mp triplet. Measuroments were
m~da of the frequoncy dependences of the loss tangent and the increment in capacItanco
at different temptiratures T and different levels of the ex:3iting UV light E. There
were also recorded the dependences of S (the light sun stored in the only significant
0.3 eV traps), the capacitance increment A C, and tan S. The data are presented in
the accompanying figures. It Is interred from analysis of the data, that the 0.3 OV
traps, common to most zinc sulfide phosphors, difter in some mann r in ZnS:Ag; at any
rate, the models tu;ually employed for the 0.3 eV traps in other ZnS phosphorn are incon-,
sistent with the present results and hence presumably inapplicable to ZnS:Ag. OrIg.
art. has: 2 figuivs.
SUB -COON: 20/ SUEM DATE-.____00j. ORIG-RRY.- 004/ Offl- REP: 004
7 .
Ca'rd 3/3

L 4879-m66 EMT(M)/EWP(t)/EWP(b) IJP(c) JD
ACCESSION N'R: AP5019835 UR/0181/65/G07/008/2276/2278
~5
.AUTHORS: Ve j~gujjgq,_,. Yenikeyeva, K. Sh. YY,