SCIENTIFIC ABSTRACT VIGDOROVICH, V.N. - VIGH, B.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001859720007-2
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: September 1, 2001
• Sequence Number: 7
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

S/020/62/144/001/023/024
Synthesis of compounda containin- a B1201-0,
OCI-TION: Institut '.svetnykh netallov im. 1. 7,11inina (Inctitute
of 'I'Tonforrour, Metals imoni I. Kalinin ). Goaudarstvennyj
nauchno-iooledovatollakiy i proyektnyj inatitut,
redl-ometallicheskoy promyshlonnosti (Statu Denign. and
?lanning Institute of the Rare "Metals Induotry)
January 26, 1962, by S. I. Vollfkovich, Academician
S -uB-.-.:ITTED -February 7, 1962
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S/Ofi 1 /62/000/023/007/120
Bi 62/B1 80
AUTWRS: Krestovnikov, A. "i. -,~iigdorovich, V. 11.
1------.--------.--------- 't
TITLE: Relationship between the melting points of chemical elements
and the shortest spacings in their cryotal lattices
PERIODICAL: Refurativnyy zh-urnal.. Khimiya, no. 23, 1962, 77, abstract
23B539 (5b. nauch. tr. In-t tsvetn. met. im. M.I.Kalinina,
V, 33, 1960, 421-430)
TEXT: Four principal schemes are noted for the variation in melting point
(T) in dependence on the interatomic spacing of the crystal (ISC). For the
uni- and bivalent metals, T falls with rising ~SC. For elements of the
transition group, T rises with ISC. For elements, whose crystals are
arranged on the basis of covalence bonds, rising ISC means a fall in T.
In elements forming molecular crystal lattices, the bond between the
elements of which is 4ae to- van der Waals forces, rising ISC means rising
T. (Abstracter's note: Complete translation.]
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S/225/63/000/002/oo6/614
Aoo6/Aloi
AUTHORS: Vigag _V. N., at; e "r,1Y-,-A-.Y&-.
TITIX: On a.method of measuring microhardness and its dependence upon the
composition of brittle materials
PERIODICAL: Poroshkovaya metallurgiya, no. 2, 1963, 43 - 48
TE)CT: The investigation was carried out to make more precise the methods
of determining micro-brittleness and to establish a correlation between the
brittle properties of the material and results of measuring microhardness. From
the data obtained optimum measuring conditions must be selected and the results
correctly explained. A five-point scale for evaluating micro -brittleness of' re-
fractory compounds, employed by Samsonov, Neshpor and Khrenova, was specifi(d
for investigating'solid solutions of the InAs-InP system (Figure 1). T~erlscale
is tabulated. The summary brittle point is determined by formula ZP M r-0 ~-ni
where ni is the relative number of imprints having a corresponding brittle point
U - 0.1 ... 5). The summary brittle point, is equal to zero (Zp a 0) if one of
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S/226/63/000/002/C,05/014
On a method of measuring... A0061AI01
the imprints shows no cracks. The microhardness is a direct linear function of
the brittle point. This function is used to obtain the true microhardness-value,
corresponding to,zero brittleness, by graphical extrapolation. The dependence
of the brittle properties in the InAs-InP system upon its composition was
studied. Micro-brittleness of the InAs system remains almost unchanged at vary-
ing load, whereas that of InP varies considerably. The "micro-brittleness -
compositionll curve shows a maximum whose location is shifted from InP to InAs as
the load increaser. Microhardness in the In"-InP system was measured by the
method recommended. The data obtained show a maximum on the "concentration-
microhardness" depekdence curve. Maximum-microhardness value in the InAs-InP
system at 20 g load, exceeds by 25 kg/mm2 the microhardness of a I;arder InP com-
pound,and is shifted to the side of' alloys with a high content of the InP com-
pound. Kurnakovlq general laws on the changes in the physico-mechanical pro-
perties depending on the chemical composition are conf irmed. There are 4 f igires
and 1 table.
ASSOCIATION: Nauchno-issledcyvatellskiy i proyektnyy institut redkometallicheskoy
promyshlennouti (Scieritific-Research and Planning Institute of' V-Le
Rare-Metal Industry)
SUBMITTED; February 19, 1962
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S/226/63/000/062/066/014-
On a method of measuring... A0061AI01
Figure 1. Sj,,ecified spale for determining the
brittle point of solid solutions in the InAs-InP
system and other brittle materials (designations 0 1 2
given In the table below) 4>1
Table. Reference scale for evaluating the micro-brittle point of refractory
compounds
Brittle Nature of imprint
point
0 Without visible cracks and splits
I One small crack
2 one crack that does not coincide with the prolonged diagonal of the
imprint. Wo cracks in the contiguous comers of the imprint
3 Two-cracks in tho oppoulte corners of the Imprint
4 Over three cracks; one to two oplita at the imprint aides
5 Breakdown of the imprint thape
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VIGDOROVICH,--.Y.N..; MARYCHEV, V.V.
Nonuniformity of the distribution of impurities in the cross-
section of a single crystal of aluminum. Piz. met. i metalloved.
16 no.5:718-722 N 163. (MIRA 17t2)
1. Moskovskiy institut stnli i splavov.

ACCESSION, NO: AP4009382
S/0126/61/016/006/0891/0894
,AUT1iO.RSt Vigd(?rovich, V. N.; itsz-.Ochev, V. V.
TITLE: Study of interaction between impurities iA"groving alumi)ium monocry'stals
from melts
SOTJR&E: Fizika metallov i metallovedeniye, v. 16" 6. 6, 1963t 891-894
'TOPIC TAGS: Fe, Cu, Si, Al, aluminum crystal, Al crystal impurity, AVOOOD
..aluminum, aluminum crystal purification, impurity interaction
:ABSTRACT.- Aluminum-monocrystals were grown from liquid Al with different quanti-
.ties of Cu, Si, and Fe. The work was done in order to study the process of inter-
,action among these impurities aindlits influence onthe removal me-these metals
f
from growing crystals. About 150~monocrystals 150L170 mm long hnd 10-12 mm in
':diar~eter were grown in vacuum with aluminum AVOOOO-~gerving.as the;-initial material.
.The crystallization speed was I mm/min. The content of impuritidh and their dis-
-tribiition along the leng-th of 1he -.crystal was detertined by spectral analysis. It
'was established that: 1) increase in the summary c;bncentration oP'any pair of the
;admixtures resulted in the increase of the third admixture in the Al crystals;
Card 1/?

ACCESSION NOt AP4009382
2) with the decrease in the initial impurity concentrationg the effectiveness of
their separation during crystallization was decreased and reached a limit at K a(
0.1-for Cu and Fe, and at K16" 0.25 for Si; 3) the impurity removal from the
crystals during the directed crystallization followed general rules governed by the
proportions of the impurities in Al. V. Ya. AlItshuler and Yu. A. Potapov partic-
ipated in the experiments. A. G. Dvortsan made the spectral analyses." Orig. art.
has: 1 table and 2 figures.
ASSOCIATION: Moskovskiy institut etali i splavov (Moscow Institute of Steel and
Alloys)
SUB1.11ITTED: 25Feb63 DATE ACQ: -03Feb64 ENCL: 00
SUB CODE: ML NO REF SOV: 015 001
COW 2/2

V.N.i VOLIPYAN, A.Ye.
Entropy of separation in Trirification by zone reanyBtallization. Zhur.
fiz.khim. 37 no.lOt2l68-2173 0 t63. (MIAA 17:2)
1. Nauchno-iBsledovatellskiy i proyektnyy institut redkometallichaskoy
promyshlennosti "Giradmet", Moskva.

VIGDOROVICH, V.N.; FATVLYFVA, L.A., red.
[Bibliography of publications on zone melting; theoryp
practice, purity control of refined materials and connected
problemsi Bibliograficheskii ukazatell literatury po zonnoi
plavke; teoriia, praktika, kontroll chistoty ochishchaeW]ch
materialov i smozhrore vopro&7' Moskva, Otuel nauchno-
tekhnicheskoi infomitsii. Vo.l.(Soviet publicationn) Ote-
chostvennaia literatura. 1963. 38 p. MRA 16:12)
1. Moscow. Gosudaretvenrjyy nauchno-issledovatellskiy i pro-
yektnyy institut redkometallichoskoy promyshlermosti.
(Bibliography-Zone melting)

AMF~SSI~-A-i TiTi:
2/2

S/0279/64/0001001/0078/0064
1ACCESSION MR: AP4019809,
I
tAUTHOR: Kasatkina, No A. (Moscow);,V1.949rovIch, V. No (Moscow); Nikitins, Z. A.
(Moscow); Uvarove, go So (Moscow); Konstantinove, L. I* (Moscow)
~0. TITLE: khavlor of IN"ritles during the crystallization refining of Indium
SOURCE: AN SSSR. Izv. Metallurglys I gornoye delo, no. 1, 1964, 78-84
.TOPIC TAGS: Indlum, Indium refining. crystallization refining, Impurity elimina-
:tion, solid phase soluble impurity, solid phase Insoluble impurity, zone refining
'ABSTRACT: A systematic study was made of the behavior of Impurities and the con-
ditions present during their elimination from Indium In the process of crystalliza-.
tion ref InIng from molten material. Indluid specimens -wtth~ a known ImfMrIty content'
(Cd, Sn, Pb, Hg, Fe. MI. Cu, Ag) were subjected to zone refining in a nitrogen
stream on equipment with one or two heating zones. Crystals extracted from the
smelt In a vacuumfurnace, at a residual pressure on the 'order of lo-3 mm H9, were
100-115 mm long and had.a diameter of about - 10 mm. The rate of extraction ranged
'from 0-3 to 2 mm/mIn. The evaluation of the experimental results employed the
...author's theoretical classification of impurities present In Indlum as either easy
.or difficult to eliminate. The former include most of tha'impurities present, are
..&Iacl Ized by poor.solid-solution solubility In.In and have distribution co,
or

Jill
09
ACCESS ION NR: AP40198
efficient values substantially below 1.0. That coefflclent Is defined here as the
ratio of the solid phase concentration of an Impurity to Its concentration In the
liquid phase. About 10 Impurities have such values near 1.0, exhibit significant
isolid-solution solubility,,and are difficult to eliminate#, Cu, Agsand NI are easy
ct, Sn..Pb. Cdsand Hg are difficult.. Sublimation of Cd and lig, as well
to extra
as oxidation of Fe and in, were noted as secondary.proc:assas favorable to the
elimination of Impurities during recry3tallization...Prol,iminary removal of Pb and
Sn Is requIred. 'Origs- art.-has: 6 graphs,,.-I tables
ASSOCIATION: none.
SUBMITTED: O9M~y62 DATE ACQ% 3.1 Kar64 "CL: 00
SUB. C01)6.., ML, 'NO, REF SOV:: 007 orrHER: V"
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ACCESSION NR: AP4029832 0/0279/64/000/002/0063/0068
AUTHOR: Vigdorovich,_X, !1. (Moscow); Adler, Yu. P. (Moscow); Vol'pyan, A. Yes
(Moscow)
T171,3i On the evaluation of the efficiency of the zonal recrystallization process
ISOURCE: AN SSSR. Xxv. Metallurgiya I gornoye delo, no. 2, 19649 63-68
'TOPIC TAGSt zonal recrystallization, efficiency, entropy, impurity, entropy
.function, thermodynamic entropy
ABSTRACT: In this paper the authors suggested that with the aid of the so-called
entropy functions an evaluation can be made of the crystallization process efficiency
of purification by examining the degree of "disorderliness" or "orderliness" of the
impurity distribution along the length o~- tha ingot. Previously, the basic criterion
used for evaluating the removal of impurltieo in a zonal recrystallization was the
so-called distribution coefficient. Evaluation of the zonal recryetallization pro-
cess efficiency, by means of the distribution coefficient, does not permit the entire
process to be characterized, even in the relation of the purification cource of a
certain number of impurities, i.e., the distribution coefficient is superfluously
specific. The authors derived formulas to evaluate the efficiency; results were
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,~ACCESSION NR: AP4029832
~compared in tables. The authors suggest an entropy criterion for evaluating the
,distribution efficiency or the efficiency of purification from impurities in zonal
;recrystallization and other methods of direct crystallization. The possibility was:
:shown of using this criterion for evaluating the behavior of separate impurities,
.their combinations, and the entire sum of the control impurities during the actual
!process by considering their distribution throughout the length of the ingot without
~apriori construction of a theoretical model of the process. Orig. art. has: 9.
;formulas, I figure and I table.
,ASSOCIATION: none
SUMITTED': 2lMay62 DATS AN; 30APr64 ENCL& 00
!SUB CODE: ML NO REF SM 016 U=: Oll
'C*rd 212.

VIPDQRPVl.Cll-,,-V..N.; NASHELISKIY, A.Ya.
Metbods of producing semiconductor compounds. Usp.khim. 33 no.9t
1085-1106 S 164. (MIRA 18:4)
1. Gosudarstvennyy nauchno-issiedovatellskiy i proyektnyy
institut redkometallicheskoy pronqshlennosti.
-. ~~ . I I . 1 1 --- ~1114~-~-~- -

VIGDOROVICli V.N. (Moskva); VOLOPYAN, A.Ye. (Moskva)
- .9 .9
Dintribution of Impurities during zone rear7stallization of varr-ng
cross--section ingots* Izv. AN SSSR. Met. i gor. delo no*5:6&-78 5'53-0
164. (MIRA 18i1)

ARiAA' 3
A -, D ( f2 'AS D1J-D/ JG
-/(V000/009/G0lc9/G0~
3
SOURCE, Ref. zh. Metallurgiya, Abs. 9G 119
AUTHOR: Vigdorovich,, V. If.; MarVohev,, V. V.
TITLE: The behavior of impuritioa in Ithe process of zone molting: of
tungsten and molybdentun
CITED SOMCE: Sb. tr. Yg_ps,,n -i. ln-t tverd--v*kh splavov, no. 5,
1964, 235-244
TOPIC TAGS- Impurity, -one molting t2pgq~anp m2jyj~~enum,h
purl-ty metal
m ~nur iF_~ aIn W and Mo accordIng to
7ur tflcat Ion 'o
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L 16129-65
ACCESSION N'R: AR4048223
of an oxpeiim-ental qtud7 Of tha belaavtor or- tho impurities con-firms
Ll, f) n ancl Mr, 2
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AU',"HOR: Marina, .1. 1. (Moscow); Nnshel'p~kiy, A. Ya. (Moo-owl;
Vigdorovich, V. 1' - Mfa -ac G W)
l:-Tfvf6scow); Bakanova, D. D.
TITLE. e cg t i q aIn ra :1 ',n 77

T A G -S c Z
On c 3~c;c.; 1.1
'D m u
z~i
use of ingots of variable crosq saction is 91ven. In order
the authorca reca-znond the rnaircull-'
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ACOP,SSION tMi A115012494
al:x-..l,kr,t, r3uL
A. N, Kirgintsev aad Az S, Tr~~'glkiy formulatc-d conditions for 3ep-
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[ASSOCIATIOM none
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AUTHORt Vigdorovichp V. H.1 Zakharovap 11. Ya.
ORG t
TITLE1 Dissolution of arsenio a or in a gallium-arsenio melt
SOURCE# AN SSSR, Izvefftiya.' Neorganicheskiye aterialy, v.
1010
2p no, 69 19669 tooi-
TOPIC TAGS1 gallium# arsenic gallium arsenidep metal diffusion
ABSTRACT: The kinetics and mechanism of the absorption of arsenic vapor by a gallium
solution were studied in nonstoichiometric molts. 'It is shown that the process
studied lies in the diffusion region and is determined by reactive diffusion. The
physicochemical relationships underlying the process were determined by using equa-
tions of formal chemical kinetics and an analytical criterion. This led to the. con-
cluaion that the rate of the process is determined by the diffusion, not by the chomi-;
cal reaction. The rate constants of the reaction were dotorm~nod. The equation for
the temperature dependence of the rate conntant is log k = - 4 1 + 0.043 in the 800-
10060C range. The activation energy of the chemical reaction n E = 19.86 kofi.l/molo.!
A study of the thickness of the gallium layer vs. the kinetics of formation of gallium ~,
arsenide showed that the thicker this layor~ the less gallium penetrates into It. The'
mr.ximum solubility of arsenic in gallium was found to be 5-51 6.7 and 14.6wt. % at
1/? - . . _ UDCs 364,68111

77~
L'06~85 67'
NCC NR: AP6028297
8002 900 and IOOOOC respectively. Gallium arsenide formed on the melt surface by the
chemical reaotion hinders the latter, and further formation of gallium arsenide is due
to diffusion. Tho rate of formation of galli= arsenide is determined by the reactive
diffusion of gallium through solid gallium arsenide to the surface of contact sdth
arsenic. The diffusion coefficients were found to be 2.3 x io-51 1.2 x 10-3 and
1.9 x 10-2 om2/seo for 800, 900 and 10000C. The following equation wag dgivl for i
the temperature dependence of the diffusion coofficienti D - 6.04 x iol+e RT
The activation ener& of the diffusion E -3.97 kcal/mole. QrIg, art, hass 8 fig-
uresp 8 tables and 10 formulas*
SUB CODEt SUBM DAM 06Aug65/ ORIG REFs 008/
07v2O/ OTH RVI 007
c&4 2/2
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'/V /U- U'U'
c ow r V, cGw)
V;,,r'~IorOvich, V
Contnuous zone-1- ran-, port recrystallization in zingle-stage installaticna
;somu: jul sssil*. izvestiya. 114etally, no. 4, 196)0S, 163-166
!TOPIC TAGS: zone rceinin,-, tin, metal purification
I .0i S - I% C T :Data are given from experiment- of
0", -
to
_Iurificazioii 1)y ~,hc none -transpor L r; t
:on the figure. S.;
Quartz tube 1 w4th a dirz,.,.cter of 20 x.m., ha5 a
lonGitudin.O_ cuL'ClIt on one end, is connected
i
to quartz vcsscl 2 on the other end and haG LI.
itubular branch 3. The melting zone (70-80 rza
llon6) is produced by electric reGistance heater
which mover. at a rate of 5 cn. 1hr UrGm richt
L