SCIENTIFIC ABSTRACT VINOKURSKIY, S.A. - VINSKIY, A.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001860020005-9
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: September 1, 2001
• Sequence Number: 5
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

VINUUMITI, S.A.; N.E.
IDA-1 api-eratus for automatic measurement of the arterial
pressure. Nov. ined. te'Xii. ro.2:3..-40 164.
(',~!I?,A 16:11)

VI'L,,IOKIJRSY,IY, S.A.- GEMBURG, Kh.B.
,
Manwtl flat-spring dynamometer DIRP-1. Nov. mod* tekh.
no.2:66-68 164. 18:11)

vihoyluMlys.P.A.; ARAYEVA, L.A.
j; 166-169 1,65.
ran flow meter. !.cv. mod. tekI. no.-,
(Mip;, 19:1)

AT

VINOKURSKIY, S.A.; GCVCHARSKIY, L.A.; RABRIOVICH, N.E.
Ifechanotran with increased sensitivity to current changes. Tmdy
VNIIHIO no.3r179-181 163 (MIRA 18t2)

BUNIN, A.Ya.; KOZLOU,, L.P.; VINOKU116KIY S.A.; MTSIN A.A.
New indicator of intraocular pressure and the results of its
use. Uch.zap. GNII glaz.bol. no-g-189-.193163. (IURA 16:9)
1. Gosudarstvennyy nauchno-issledovatel'skiy institut glaznykh
bolemey imeni Gel1mgolltsa (for Bunin, Kozlova). 2. Vsesoyuznyy
nauchno-isaledovatellskiy institut meditsinskogo instruments-riya
i oborudovaniya. (for Vinokurskiy,, Stetsin).
(EYE, USTRUIVITS AND APPARATUS FOR)
WITRAOCULAR, FRMSURE)

BUNINS A.Ya. kand.med.nauk; KOZLOVA, L.P.; VD;IOKURS M, S.A. )kand. techni-
cheskikh nauk; STETSIN, A.A.
New indicator of intraocular pressure and the remLlts of its
use in prevertive examinations, Vest. oft. 76 no.1:75-76
Ja-F'63, (MIRA 16:6)
1. GoBudarstvennyy nauchno-ii;sledovatellskiy institat glaznykh
bolezney imeni Gellmgolltsa i Vsesoyuznyy nauchno-iseledovatell-
skiy institat meditainskogo instnuaentariya i oborudovaniyao
(m,, INSTRUMENTS AND APPARATUS FOR)
(INT.RAOCUIAR PRESSURE)

VIZIOKIJRSKIYI S.A.; GINOURG, Kh.B.; KORYAKINI M.F.
Reverse dynamometer for determining the force of weakened
muscles. Mod. prcm. 15 no.6:57-59 Je 161. (141M 15:3)
1. Voesoyuzriyy nauchno-iseledovatellskiy institut moditsinskogo
instrumentariya i oborudovaniya
(DYUMAZTER)

VINOKURSKIX, S.A.; VOTGIIALp B.Yo.; AMAYEVA, L.A.
Arterial oscillometer. I-Ifed.p.-c.-n. 15 no.9:48-50 S t61. 11.: 9)
1. Voesoy-aznyy nauchno-insledovatellskiy institut moditsinskilch
instrumentov i oborudovanlya i rsontralInyy institut usover8henstvo-
vaniyu vrachey jOSCILLOW-TER) (BL(OD PRESSU;~E)

L 27956-66 EWT(m)/EWP(t)/ET1 IJP(c) JD/WB
ACC NR, AP6017740 SOURCE CODE: 50
AUTHOR: Vinokurtsev, G. G. ZS
ORG: Gas-Piltlibb Administration, Tashkent (Upravleniye magistralfnykh gazoprovodov)
TITLE:' Planning ineans for eled-Mchemical protection with comprehensive consideratio
of local conditions of use of pipelines
SOURCE: Stroiteltstvo truboprovodov, no. 1, 1966, 18-19
TOPIC TAGS: pipelinej, electrochemistry
ABSTRACT: One reason for the inadequate protection from soil corrosion of the
700-mm pipolino from Dzharkak through Bukhara-Samarkand-Tashkent-Chimkont,
1674 k-m I;nr, and the'100 to 700-Mm foo e lines from it is the inadoquaby of
d
the plans made for cathode protection.,ITThe list of shortcomings of the I
0
,original plan presented includess th potential at the drainage point is
ireduced; the calculations' of current and poimr were not correct; the specific;
.: resistance of the soil measured at one point at one time were too varied; - I
,the section of the pipeline as a component part of the resistance circuit was,
!taken too lowl the protected zones were taken too largel one third of the
protectbra were installed in soils with specific resistance much greater than,
;too ohm/m, where they will not work at all,, Therefores a new plan has had to
drawn Up# with more attention paid to careful measurement and plamdrids
and consideration-of local conditions. Orig. art. hasi 1 table. (JPRS1
SUB CODE: 130 97 / SUBM DATE. none
UDC.~

VINOURTSEVO-G.G.
FJ.eld laboratory of protection. Strol.triaboprov.
9 no.2s27 F 164. (14IRA 17:3)
jyq Gnzoprovoda, Kagan, Bukharskoy
RiT'o n0yo nprrivier.
ob

VINCVtJRTSBV, G.Gl
Flectxorhemiza2 protectim of gas Fi;eIllines in Central A-9.1a, Gaz,
deIG no,2.0-.24-2? 164a (MnA 18!1)
1. TaBhkentskoye upravlenive magistraltnykh gazopravodov.

vivOKIMSBY, 140
When automata vere established. ObBhchestv. pit. no.7:6!-62
ji 159. (MM 12:12)
l.Direktor tresta restoranov i kafe, Leningrad.
(Leningrad-Restaurants, lunchrooms, sta.)

CZECHOSLCVAKIA/-r,Iectronics - Electrecells and Semiccn&~ctors H
Device
Abs Jour : Ref Zhur Fizika, No 9, 1959, 20783
A thor : Frank, Helmar; Vinoral, Jarcmir
Inst :
Title : Silicon Junction Rectifiers
Orig pub : Slabopro~dy nbzor, 1958, 19, No 10, 639-643
Abstract : After a examination of vario-,s tyres of rectifiers,
the a thors describe the properties of silicon j,,:.nction
diodes. Comparison of the properties of silicon and
germanium diodes is accompanied by a brief explanation
on the basis of the band theory. Pata are given (incLi-
ding curves for the eqx!ations and tables for the parame-
ters), which characterize the properties of silicon
j mction diodes (types Ill - 124 NP70), designed for vol-
tages up to 300 and ctxrents up to I amp, partic*larly
their behavior at higher temperat rea. Bibliography, 13
titles.
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VINOPAL laromiT inz., dr.; PISA, Gustav, inz.
Meta.Uurgy of semiconductor pn junctions. Hut listy 17
no.10:712-1W 0 162.
1. Geakomoravska-K,31ben-Danek Praha.

I-.;-.---
VINOPALs J... ins., dr.; PISA, G.'j inz.
Silicon electric power rectifiers. Energetiks Cs Il
no.3:143-144 Mr 161.

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AUTHORS: -Pla'a, Gustav, Engineer, Spiess-, Petr, Engineer.,
Sebek, 8vatopluk Engineer, Vendlerova, Ve"fra, Engineer
"I
and_Vinopal, Jarom2-r, Engineer Doctor
TITLE. Now kiizwledge Gained in the Development of th
Technology of Germanium and Silicon RectifieraElements
PERIODICAL:Elektrotechnicky obzor, 1960, Vol.49,No,,11,pp~579-583
TEXT: In addition to reviewing world trends in semiconductor
development, the authors deal briefly with,results of development
work in the Semiconductor Laboratories of CKD. Prague. The
problem of dislocations in germanium has been dealt with extenstve-
ly in Czech as well as in foreign literature (Refs. 3,4,5)-
Therefore, the authors deal only briefly with the results of
extensive experiments, the aim of which was to determine the
influence of the absolute number of dislocations on the quality
of the P-N junctions and the influence of accumulation of
dislocations and of microscopically visible disturbances caused
by accumulation of dislocations within a small volume. A more
detailed treatment of these is given in a paper by B~irger and
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New Knowledge Gained in the Development of the Technology of
Germanium and Silicon Rectifier Elements
Sebek which is in the process of publication, In the experiments
three germanium single crystals have been used which have a
satisfactory specific resistance and a lifetime of the minority
carriers. All these three crystals contained in some spots very
pronounced grouping of dislocations in the form of lines and
stripes. All the cut plates were etched in order to make the
dislocations visible. The locations of the disturbances were
marked in detail. In order to be able to make a good comparison,
test discs of 12 mm diameter were cut from these specimens.
These could be sub-dIvided Into three groups-
a) Plates from locations which did not contain accumulations of
dislocations but only uniformly distributed dislocations~
b) Plates from locations that contained slight accumulations of
dislocations in the nature of stripes,
0 Plates from locations that contained considerable line
dislocations formed by a large quantity of dislocation5. A total
of about 150 such plates were investigated which originated
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New Knowledge Gained in the Development of the Technology of
Germanium and Silicon Rectifier Elements
from three germanium crystals. The characteristics of the three
types of discs are reproduced in Fig.1 and it can be seen that
the diode of the group (c) reaches only about 40% of the voltage
of the diodes of group (a). All the results obtained for the
three groups of diodes were used for plotting average value
curves. These are similar to the curves in Fig.2. The
characteristics of diodes from group (b) were below those of
group (a) and on the average were nearer to those of group (c),
The experiments have shown the quality of the P-N transitions
is decisively influenced by the poorest transition spot, i.e. by
the spot that contains a high accumulation of dislocations and
it is this spot which determines the properties of the P-N
junction. In studying the inverse voltages of diodes,
investigations were made on materials with various average
numbers of dislocations between zero and several tens of
2
thousands per cm As a result, the dependence was determined
of the inverse voltage of junction rectifiers on the number of
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Germanium and Silicon Rectifier Elements
dislocations, provided that the dislocations are uniformly
distributed0without considerable accumulations of stripes or
lines. It was found that within wide limits this dependence
is not greatly affected by the absolute number of dislocations,
provided that these are uniformly digtri~uted. Only in the case
of high densities, i.e. above 2 x 10 /cm , will there be a
considerable drop of the average voltage of the diodes. The
P-N transitions of germanium were first etched electrolytically
by means of a hydrofluoric acid and then were etched again with
a mixture, the main component of which was hydrogen peroxide
with additions of nitric, acetic and hydrofluoric acid, The
effect of this new etching mixture was tested on a large number
of diodes. The inverse voltage improved considerably, on the
average by 100 V, as also did the inverse current (Table I and
Fig.2). However, the surface of the diode is much more
sensitive to the atmosphere and it was necessary to develop a
new method of protecting the junctions, For this purpos;~ siliccn
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New Knowledge Gained in the Development of the Technology of
Germanium and Silicon Rectifier Elements
varnishes and silicon vaseline were used but these did not prove
satisfactory. Subsequently, polymer type synthetic materials were
used for this purpose and the characteristics of a diode after
etching with hydrofluoric acid, the above mentioned etching
mixture and protection by embedding in a synthetic material, are
plotted in Fig-3. For the manufacture of silicon P-N junctions
with inverse voltages exceeding 1000 V it is advisable to use
silicon with a specific resistance of 100 to 300 Ohm cm and a
minimum lifetime of the minority carriers of 200 to 300 lisec with
a homogeneous crystal lattice and without internal stresses and
undesirable disturbances. Several methods of etching of silicon
plates in etching agents of various compositions were tested.
The speed and the depth of etching increases with the concentra-
tion of the etching agent and with temperature. The decrease in
the thickness as a function of the etching time in various etching,,/
agents is2plotted in Fig.4. For 150 A rectifiers, a junction area
of 200 mm was chosen in order to obtain longer service life-,
better heat removal and to avoid excessive,over-loading when the
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New Knowledge Gained in the Development of the Technology of
Germanium and Silicon Rectifier Elements
junctions are fully loaded. CKD manufactures rectifier systems
with N-type silicon with junctions produced by the fusion method
in vacuum. Type N silicon is the most easily available in Czecho-
slovakia and so far has proved satisfactory., Manufacture of P-N
junctions by the diffusion method is also being studied., since it
is considered to be more suitable for P-N-P-N junctions. The best
method of protecting P-N silicon junctions from the effects of
the atmosphere is to encapsule them in vacuum--tight containers,
In tests so far good results have been obtained by protecting the
junctions with a silicon vaseline prepared in the Research
Institute for Organic Synthesis without any addition, the vaseline
must be absolutely pure without moisture and degassed in vacuum,
Silicon vaseline with additions of halogenized alkylsilanes has
not proved satisfactory. The encapsuling of the rectifier -9ystemq
is also briefly described. There are 5 figures, 1 table and
15 references: 3 Czech, I Soviet, 2 German and 9 English.
ASSOCIATIONz &D Praha, n.p., z:a'vod Stalingrad
(eKD Prague ; Stalingrad Plant)
SUBMITTED3 July 20, 19b0
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VIVOPAL, Jaromir, lnz,, dr.; POSA,-Gustav, inz.
Methods of chemical 6tching of gerranium and silicon- El tech
obzor 51 no.l:,46-47 Ja 162.

43019
AUTHORS:
TITLE:
8/194/62/000/010/041/084
AO61/A126
Vinopal, Jaromir.-Piga, Gustav
A method of obtaining the structure of the type p+-n-n+ or
n+-P-P+ for silicon power rectifiers .
PERIODICAL! Referativnyy zhurnal, Avtomatika I radio,elektronika, no. 10, 1962,
26, abstract 10-4-51ch P (Czech pat., c1. 21g, 11/02, no. 99437,
April 15, 1960
TEXT: It Is noted that Junctions are formed by alloying, the alloys used
for their fabrication being applied in the form of-foils 0.05 - 0.2 mm thick. A
foil containing silver, antimony, tin, and germanium is applied to one side, and
another containing,aluminum, indium, and zinc Is applied to the otherside of the
silicon plate.. The two electrodes of the forthcoming rectifier, which are made
of tungsten, molybdenum, or tantalum, are also coated with a foil containing, e.
g., silver and germanium. The entire multilayer system is annealed at 820 -970 C
In Inert or reducing atmosphere, and is subsequently cooled in the course of 7
10 min. The rectifiers thus obtained have a reverse current < 0.5 ma at 1,000 v.
[Abstracter's note: Complete translation] N..S.
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AUTHORSt Vino a nd P"da, Gustav,
iiaaRp~~ ~r, Engineer Doctor a I
Engineer
TITLE~, Silicon Power Rectifiers
PERIODICALP Elektrotechnick'Y' obzor, 1960, Vol.49, No.5, pp-268-271
TEXTi Development work on silicon power rectifiers has been
in progress at dKD, Prague, Stalingrad Plant, since 1958. The
first stage covered development of P-N junctions for ratings of
100 A and peak voltages of 600 V. The aim was to obtain a
P+-N-N+ junction as proposed by R~ N. Hall and W. C. Dunlap
(P-N Junctions Prepared by Impurity Diffusion, PhyB, Rev.(1950),
No.80, p.467). The rectifier system is produced by alloying one
s�de of the silicon plate with an alloy containing primarily silver
and a low content of antimony as the donor, and the other side of
the plate with an alloy containing primarily aluminium, which acts
as an acceptor. As a result P+ and N+ zones are formed on the two
faces of the silicon plate with a central high resistance N zone
formed by the silicon,, For manufacturing the P-N junctions,
single-crystal silicon of N-type conductivity, with a specific
resistance of 84 to 127 -Ocm (average value 10611 cm), was used
with an average lifetime of the minority carriers of 134 psec.
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Silicon Power Rectifiers
Table I gives measured values of the voltage drop in the forward
direction, V for forward currents of 100 and 150 A. respectively,
and of the inverse current, 1LA, for inverse voltages 100 to 800 V.
The voltage drop in the forward direction corresponds to the usual
values for such cells. The volt-ampere characteristic in the
forward direction is plotted in F~g-3. The active surface of the
cell can be loaded up to 102 A/cm . In a number of cases inverse
currents less than 10 sLA/cm were obtained for voltages of 1500 V,
From the point of view of thermal stability it is advisable to
have a low2 inverse current. For the time being an inverse current
of I mA/cm of the junction at 600 V, measured at normal tempera-
ture, is considered to be the maximum permissible limit, the volt-
ampere characteristic in the inverse direction is plotted in
Fig.4. Fig-5 shows the temperature dependence of the volt-ampere
characteristic, In accordance with measured results the developed
rectifier cells can be loaded up to 140 to 1500C~ If the cooling
air temperature is high, the load must be appropriately reduced~
The over-load capacity was tested using sinusoidal current pulses
of 0.01 sec duration.. The starting temperature was 200C, the
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tested cell withstood a surge of 2150 A but it was.destroyed by a
surge of 2400 A. By means of the applied technology 80% yield wash
obtained of satisfactorily etched junctions, of which 70' were
/0
diodes with inverse voltages of 600 V and 10',o' were diodes with
inverse voltages between 300 and 600 V. Work is in progress for
developing industrial series of silicon rectifiers for the
following applications: mine traction (275 V, 500 A); a.c. loco-
motives (750 V, 4000 A); electrolysis plants for chlorine and
aluminium manufacture (450 V, 25 000 A); urban traction (66o v,
1000 A). In conclusion it is stated that the large area P-N
silicon junctions are produced in Czechoslovakia without using
gold for the transition. Development work has progressed to a
sufficient extent to permit starting manufacture on a semi-industrial
scale of silicon power rectifiers. Industrial manufacture of these
will be accelerated and the prices will be fixed to be comparable
with foreign rectifiers of the same type. There are 5 figures,
I table and 6 references: 3 Czech cnd 3 non-Czech.
ASSOCIATIONt CKD Praha - zavod Stalingrad (CKD Prague - Stalingrad
Plant)
SUBMITTED: November 29, 1959
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Silicon Power Rectifiers
Fig-3 Fig. 4
.01 1 LA
a 43 tou !5
[V]
Obr. 3. Voltamp6rov6
charaktoristiky v pro-
pugtndm sm6ru.
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_41
IVI
ur
ob, 4. voitamp&m-6 cliarakte-
riatiky- ir z4v2Srndrn sm6ru.
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150 -vcv;~R
Ip IAI
F
p
PSIC
120T
ISO T
Obr. S. Voltampdrov6 charaktoristiky v Z&VNIOSti
na toploUS.
Too

U, 1Vj
10 If,,
0 61
10
:01
0
4 5
UP

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ra

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Legend Table 1
1) Number, 2) Forward current,A, 3) Reverse voltage, V,
4) Voltage drop in the forward direction, 5) Inverse current, IiA.
ch'110 1 2 1 .3 1 4 1 .5 6 ! 7 1 8 9 1 10 12 1 13 14 15 1 16 1 17 18 19 20
Fil I
Proud,
,v pro.
pust- 'Gbytek napiftf v propustndrn sm&u EV]
116M
'"n6rul
(A]
100 1 1 log 11 03110(5110311 08110810,07111211 12:11:0.1111.10111:0811 11 1:13111:0.3,11
1 1:0311,11:1.11
150 1:11 1: 17 1:2011:11 i 1: 10! 1: 12! 1: 1511:16 10411:22;1"2,1; 121 .191 103.1:151 11 10'J.20.1,20
Z11-
vzrnd
na- ZpUn.-~ proud (VA]
p6tI
IV]
100 1 1 1 1 lo 1 50 1 1 70 1 1 1 5 20 6 1 1 5 1
200 1 1 1 1 15 1 60 2 3 115 1 1 5 6 15 1 1 .5 1
300 1 i
I 1 1 15 1 70 3 4 1501 2 1 1 35 6 70 IS 2 1 15 1
400 1 1 1 1 15 1 80 5 5 1801 4 1 1 6.5 8 100 20 3 1 20 1
i 1 1 2.5 2
500 2 1 1 2151 7 2 1 190 9 ISO 25 3
600 2 1 1 3 19 1 90 4 1 240 0 5 i 270 25 4 1 35 3
11 18 1 10 11 9 2 260 1 12 450 23 5 1 40 4
700 3 1 2 0 20 1 100 18 280 12 0 00 10
800 3 2 3 35 21 1 106 23 101 310 15 80 400 1 15 1 600 32 8 3 55 5

KROCZEK, J., inz., dr.j_VIFOPAL, K.; HRUBY, V.
Solenium rectifiors in powor industrieo, Energetikka Cz
7 no.2:77-81 F 157.

VIN(TAL, K.
Selenium rectifiers in the power industry. P-77,
(Enargetika, Vol. 7, No. 2, Feb. 1957, Praha, Czechoslovakia)
SO: Monthly List of East Furopean Accessions (EFAL) LO. Vol. 6, No. 9, Sept. 1957. Uncl.

VINOPALY M., inz.; ECIERTOVA2 L.2 doc, dr.; DEMUPH, M.j, inz.
Methoj of gas pressure measuremett in closed vacuum systwemz.
AUtonnatizace 6 no.12:314 D '63-

VINOPAL" S.
Design characteristics of control valves. p. 239
AMMATISACE. (Ceskoslovenska vedecka technicka spolecnost pro elektrotechniku
pri Ceskoslovenske akademii red., Odborna skupina automativace a Ceskoslocanska
spolecost pro sireni politickych a vedeckych znalosti) Praha., Czechoslovakia.,
Vol. 2p no. 8, Aug. 1959
Monthly List of East European Accessions (EEAI), LC, Vol. 89 no. 10., Oct. 1959
Uncl*

VINOPAL, S.
Design characteristics of control valves. II. p. 272.
AUTOMATIZACE. Praha, Czechoslovakia. Vol. 2, no. 9, 3ept. 1959.
Monthly list of Fast European Accessions (EEAI) LC, Vol. 9, no. 2, Feb. 1960.
Uncl.

VIN-,?AL, 5.
TECHNOLOGY
Periodical AUTUMATISACE. No. 11, Nov. 1958.
VTNOPALj S. Flow meters for liquid metals. p. 364.
Nionthly List of East European Accessions ) LG, Vol. 8, no. 3, March, 1959. Uncl.

2h 695
Z/005/60/000/009/008/015
A121/A126
AUTHORS: Knf~e, Bed;ich, Engineer, (Nymburk), Ra;kota, Jan, and Vinopal,
Zden;k (Prague)
TITLE: None given
PERIODICAL: Vynhlezy, no. 9, 1960, 9
TEXT: (21h, 1; Registered November 24, 1959; Patent Application 6766-
59). Sheathing method for ceramic radiators of electricity consuming devices witn
a ceramic body, formed out directly to the proper shape of electricity consuming
device. It is characterized by the following: The body is equipped with a metal-
lie or nonmetallic resistor element, the bare parts of which are covered by a
layer of heat-resistant cement. After rendering conductive its surface, such a
radiator is metal-coated in a galvanic bath by evaporation or by spraying, by
means of which a hermetic and noncorrosive metallic protective coating is obtain-
ed.
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VuOS*KIY, V.11., dotsent
Selection of the optimum voltage of electric supply syztems for
coal mines. lzv. v7s. ucheb. zav.; gor zhur. no.10:155-158 160.
(MIRA 13:11)
1. Kiyevskiy politekhnichesk17 institut. Hekomendovana kafedroy
gornoy elektromakhaniki Kiyevskogo politekhnicheskogD instituta.
(Xlectricity in mining)

SOV/ 112-59 -4-6941
Translati-= from: Referativny-/ zhuxn-,I. Elektrotekhnika, 1959, Nr 4, p 74 (USSR)
AUTHOR: Vizioslavakiy, V. N.
TITLE: Voltage Regulation in Mine Electric Networks
PERIODICAL:. V ab.: Gorn. elektrotekh--ika, M. , Ugletekhizdat, 1957, -p 476-490
ABSTRACT: Various methods for voltage regulation in mine electric networks are
considered; as suchnetworks are rnainly supplied by 6-kv lines, the local
regulation means are considered preferable. A phase -switching booster
transformer is recommended as one of simple and eccnomical devices for local
voltage regulation. The transf3rmer permits varying the boost voltage by a
step--by-step turning the input-voltage vector with respect to the voltage of a
regulated line by means of switching the phases of the supply system. The
transformer capacity should amount to 1076 of the power transmitted if a 107o
regulation is desired. A transformer circuit diagram, a voltage vectoz
diagram, and a description of the regulation scheme are preseated, as well as
oscillograms of boo3t-ve'Ltage transiormer switching, the excltatior. w-Jad-Ing
being short-circuited during the switching.
Card 1/1 1. V. 'Kh.

VINC3LAVS*KIY, V. N,
"Booster Transformer -witu!. Re~pdation via Conversion of t',.e Phases of t:.,-~
Voltage." I'in I'Lighor Muention USSR, Kiev Ctdor of' Lenin of Yoly'VichniC Trj~;t,
Electrical En"ineerino, Faculty, Kiev, 1952
i
(Dis5ertation for t. e Degree of Cam idate of Technical Sciences)
SO: Knizhnaya Latonist No. 32, 6 A g 55
P Au

VOLOTKOVSKIY, Sergey Andronikovich, dcktor tekhn.nauk; VASILEVSKIY,
Yevgeniy Viktcrovich, inzh.; GUIVAII, Ezrzanuil Markovich,
kand. tekhn. nauk; 'JILOSLAIISHY, V.11.., kar4.tekhn.naukp
retsenzent - -
(Protection of underground structures from electrolytic cor-
rosion] Zashchita podzemnykh sooruzhenii ot elektrokorrozii.
Kiev# Tekhnika, 1964. 134 p. (MIRA 17:10)

)Jay
VINO3LAUNY...149UIy-UiU-j k-,nd.tekhn.na",dotz.;
RYBCIM#'KO, Fetr Filli6nwich,
POPOVICII, Nikolay Gavrilovich, kand.tekhn.nauk,,ds--s.;
POVCANSKIY, Nikolay Alekseyevich, inzh.; DANILICOUK,
Grigoriy Ivnnovich, inzh.; VOLOTKO'VSKIY, S.A.p doktor
tekhn. nauk) prof., retsonzent; MIROSMIK, A.M., kand.
tekhn. nauk, retsenzent; DEVISMIKO, S.A., inzh...
retsenzent
(Automation of industrial processen in coal mines] Avto-
tratizatstia proizvodstvtinnykh protsessov ugolInykb Chakl-t.
rDy] V.14.Vinoslw.,skii i dr. Kiev Tekhnika, 1904.
(14MA 16:3)

VIECV, M. -J.
Dostizheniia sovets-kogo j,rodu,-tivn(,gO zlAvctruv(-,d~;'-va ;-41chitlicmentr, of 'Juvict
productive ani:~al ILreed-ino. Mosk-ja, Gos. orden, Lerdria L-Le
SSSA"s 1952. 49 P.
6U. 11"ot.thly List of hu-,31' ii Vo,. 7 No. 1; KaY 1954.
L

VIFT, IT? ADO,- -V-,
C. ft . I/- a 81
I
.P L%.- f a/ I I s I
6 *
jA
- 'It-04L
Z;~ I
1-11
Son ~, solutions and gels of soaps. G. V. Vinngradov.
Uspeat KU173. 20.
ences, dealing largely i%rith ,structin-es of 4oap in soins. and
eh, in aq. anti nonaq. mc,lia. C, At. Knvjl;il)nfr
9

viwma, Z.
Inaugural address at the 3d National Conference of Scientific
and Technological Workers in the Field of Steel Construction.
p. 12. INZFNIMKE STAVBY. (Ministerstvo stavebnictvi)
Praha.
Vol. 4, no. 1, Jan. 1956
SCMCE: MAL LC Vol. 5, No. 10 Oct. 1956

VINS, -Bohuslav, im., CSC.
Report on the state and prellminary evaluation of the
Czechoslovak test areas of the provenance tests with the
spruce of the IV8 international series. Las cas 9 no.
12: 1245-2152 D 163.
1. Vyzkumny ustav lesniho hospodarstvi a myslivosti,
Zbraslav-Stxnady.

V1 -S, i,.
AGR ~ CU LTURE
r~dOD~GAIJS S(;CW1',1TK 71.:-DA XL 5, no. P, FQb. P-69
Vins , B. Preliminary rnsults of on the ref-encration -T "irs.
p. 175.
Monthly List of East -_-,',!rorean A ccfms[ow,, O-T.'A- " Vol. ": ',-. ".
- ,I I ) I U,
I-lay 1959, Uneldss.

L 3 0 2 QQ -6 ~ ' 1--c --
ACC NRj A SOUPLE CODE: CZ/0085/65/000/005/0152/0155
AUTHOR: Vins1,Bohusl&v
ORG: Forestry and Game Managewnt Research Institute (VU lee. hosp. a mysl-)
TITIZ: Problems of dendroclimatolQgical research
SOURCE: Meteorologicke zpravy, no- 5, 1965, 152-155
TOPIC TAGSt forestry, plant growth, meteorology, climatology
ABSTRACT: The article discusses how the fluctuation of the width of the
,annual rings of trees depends on the influence of weather fac-
~tors and thereby presents the possibility of investigating those
influences on trees in the past. It gives an account of the
historyp problems and methods of the scientific areas which
11 tudy the width of annual rings from various points of view
(dendrochronological and dendroclimatological r63earch)o The
method is used above all in forest investigations and practice,
,but s~lsojn..=any other areas -- meteorologys climatologyp
astronomyp even archeology and other areas. [JPRS1
SUB CODEs. 04j, 02 / SUM DATE: none / ORIG REF: 016 SOV REF: 007
OTH REP: 030
C-d 1A

VITS, Bohuslav, inz. CSC.
Standardization of provenance research and testing. Les cas
10 no.2.0216-.218 F 164
1. Vyzkumy ustav lesniho hospodarstvi a myslivosti, Zbraslav-
Sti-nady.

VIIIS.. J'.-,Inz.j SUIL, Jo, inz,
Gliding quality of plain bearings with galvanically coated liningas
Strojironstvi 12 no-'04:271-277 Ap 162,
1e Statni vyzkumny ustav tepolne techniky (for Vins). 2. Statni,
vyzkumny ustav ochrany materialu, Praha (for Sulc).

2257, Ursc p-L1.11ag" Wilit Falwks for MakiM - H
mlt III tkanla nA klissna "
m C~t:~! strofirclu'lli, V. 5, no. 11, Nov. W.
strellgill. i'resiahility, alld IllachillaNli(v Vf ral Itic. reinfulp-d
P6,tici. sa-doluill foods, molloting, iol)TIA:11fioll, and m(Allig
Of b"'hingi and Iwarima, of these titalcriak. Talilt %, graphl.

VINS, Jindrich inz.
"Axial ring packingff by E. Mayer. Reviewed by Jindrich Vins.
Stroj vyr 12 no.1:75 Ja'64.

- VIIS, Karel, Inz.
Semiconductors in industry. Tech prace 15 no.9:672-675 S163.
1. Vyzkumny ustav pro adelovaci techniku A.S.Popova.

VIN3. yalrel, jrz.
--- --- 4~-,., - -
. -:~y (. - 4 ~C). :..
I j r- - r - I ..
24.5-1246 'clif 'i-,4.
1. ft.,,%P;~vov of Telo(,omr,uldcati~,n, P-rague.

23569
z/oog/61/000/007/002/004
141.2.20 E112/E135
AUTHORs Vin', Lud9k
Ins
TITLE., Purification of hydrogen with liquid nitrogen
PERIODICAL: Chemick~ pruemysl, 1961, No-7, PP. 348-353
TEXT: Advantages of the purification of hydrogen (required
for the synthesis of ammonia) by means of liquid nitrogen are
discussed and compared with the conventional method, based on
copper salts. A recent Soviet study (Ref.2i I. Burla6enko,
Symposium, MCHP, Prague, 1957)
detailing the economic superiority of the liquid nitrogen
purification of hydrogen (produced by gasification of brown coal)
is quoted. Basic principles Of H2-purification with liquid N2 are
reviewed and standard plant equipment is discussed. The process
comprises gradual cooling of crude hydrogen, leading to a partial
condensation of the impurities. Essential preliminary treatment
consists of complete removal of C02 to prevent icing of the heat
exchangers. Cooling the crude hydrogen to -190 OC causes
condensation of the methane fraction, the quantity and composition
of which depends upon the composition of the entering gas. Carbon
monoxid , oxygent argon and last traces of methane are removed by
Card 1/9

23569
Z/009/ 1/000/007/002/004
Purification of hydrogen with liquid ... E112/E135
washing with liquid nitrogen at -190 OC in special column. The
purified hydrogen-nitrogen mixture leaves at the upper end of the
column while the so-called CO-fraction accumulates at the bottom.
Different types and designs of the nitrogen cooling cycles are
described. The economics of the cooling process are improved by
increased N2-pressure and a graph is included in which N2-
consumption is plotted versus pressure. The effect of temperature
in the washing column upon nitrogen consumption is also shown in
the form of a graph, indicating a decrease of N2-consumption with a
decrease in temperature. The merits of different N2 cooling cycles
in the U.S.A. and in Europe are discussed. The author considers
that the system developed by Messer of Frankfurt, Germany, offers
definite advantages, based an it is on air separation at a pressure
of 40 atm. A Czechoslovak design for hydrogen purification with
liquid nitrogen (for NH3 production) is discussed. Sources Of H2
will be either catalytic cracking of natural gas or decomposition
of natural gas with simultaneous formation of acetylene. Flow
sheets of both processes are submitted. The latter method gives
rise to hydrogen of very high methane content. It is therefore
necessary to isolate and recycle the methane fraction.
Card 2/8

23569
z/oog/61/000/007/002/004
Purification of hydrogen with liquid ...EI12/EI33
The Czechoslovak plant is designed to process 14000 to 16000 Nm3
crude hydrogen per hour. The crude H2 enters the plant at a
pressure of 12 atm. Particular attention was paid to the preven-
tion of icing of the heat exchangers. Water vapours with which the
entering hydrogen is saturated are removed by means of counter-
current exchangers, de-iced by the entering gas, and in ammonia
refrigerators, defrozen by means of warm ammonia. The last traces
of moisture are removed by absorption on silica gel at -45 OC.
Carbon dioxide is also absorbed on silica gel. With maintenance
problems in mind the plant was so designed that all heat exchangers
can be disconnected and separately defrozen. High-pressure N2 is
passed through twin heat exchangers and an absorber, in order to
remove traces of contaminating oil. To compensate for the increase
of temperature during processing, an open, high-pressure N2 cooling
cycle (pre-cooled to -45 OC with ammonia) was operated, as it was
assumed that a cooling system based on throttled expansion was
simpler and more reliable than a cycle with an expansion machine.
For the cooling cycle only such quantities of technological nitrogen
are used, as are essential for the washing of hydrogen with liquid
Card 3/ 8

23569
z/oog/61/000/007/002/004
Purification of hydrogen with liquid ... E112/E135
N2- A diagrammatic representation of the plant for 112
purification is shown in Fig.6; (la, lb - entrance heat exchangers,
2 - separator, 3A, 3b - refrigerators, 4 - drier, 5, 6 - heat
exchangers, 7 - evaporator of the CO-fraction, 8 - washing column,
9, 10, 11 - heat exchanger, 12 - drier, l3a, 13b - ammonia
refrigerators, 14a, Ab - heat exchangers). Hydrogen enters the
plant at +20 to +35 OC under a pressure of 12 atm.' It is saturated
with water vapours and precooled to -30 OC in the heat exchangers
la, 1b, by means of the recycled hydrogen-nitrogen mixture.
Further refrigeration to -40 - -45 OC is accomplished in two
ammonia refrigerators, 3a. and 3b. A part of the water vapour is
eliminated in drier 4 (Abstractor's notet not marked in sketch but
obviously is the smaller container between 3b and 5), by means of
silica-gel. Cooled nitrogen is then sent to the deep-freeze
section, to be refrigerated in heat exchanger 5 and 6 to -170 OC
by means of the recycled hydrogen-nitrogen mixture. The crude
hydrogen is finally cooled to -190 OC in the evaporator of the
CO-fraction (7). Final purification of hydrogen is carried out in
wash tower (8) by means of liquid nitrogen, which is being sprayed
down to meet the incoming hydrogen. The CO-fraction accumulates
Card 4/ 8

23569
z/oog/61/000/007/002/oo4
Purification of hydrogen with liquid ...EI12/EI35
at the lower end of the tower and methane and argon are completely
removed from the hydrogen. The nitrogen required for the
purification and refrigeration enters the unit under a pressure of
180-200 atm. It is sent through heat exchangers 14a and 14 b
where cooling is effected by means of the CO-fraction. It is
further cooled to -45 OC in one of the ammonia refrigerators, 13a
or 13b and passes through a silica-gel drier (12) to be freed
completely of moisture or oil contaminants. Before entering the
deep-freeze section, the nitrogen is divided in two partat
fraction I in cooled in heat exchanger 9 by means of the CO-
fraction, while fraction 2 is refrigerated in exchanger 10 by means
of the nitrogen-hydrogen mixture. Its temperature is brought down
to -170 'C, while final refrigeration to -190 OC is accomplished by
throttled expansion. The Czechoslovak plant operates with two heat
exchangers for each operation, which nre used alternately,
permitting removal of the ice without interrupting the process.
The heat exchangers, a photograph of which is shown, are of the
finned tube type. The following economic data are tabulated:
Card 5/8

23569
z/oog/61/000/007/002/004
Purification of hydrogen with liquid .... E112/E135
Consumption for 100 NO
3 H2 + N2 (11 Atm) for I ton
ammonia
Nitrogen, total, in Nm3 32 88o
Nitrogen for washing 7.45 204
Energy, in kW/h 8 218
(compression of N2 and NH3)
Energy, in kW/h 4.1 112
(for purifIcatton of H2)
It is concluded that the design, construction and operation of the
new plant for the purification of hydrogen with liquid nitrogen is
more economical than scrubbing with a solution of copper,
permitting the reduction of processing costb for the production of
synthetic ammonia. It is considered to be equal in construction
and assumed parameters to similar plants in foreign countries. it
in hoped that the equipment will be not only an essential part of
the Czechoslovak plants for synthetic ammonia, but will also
become an important export item.
Card 6/8

z/oog/61/000/007/002/004
Purification of hydrogen with liquid.... E112/E135
There are 7 figures (3 graphs, 2 flow diagrams, I sketch of plant-
design, I photograph of heat exchanger), 3 tables and 9 references:
3 English, 3 German, 2 Czech and I Soviet. The English language
references read as follows:
Ref.4: Baker: Low-temperature processes. Chem.Eng.Progr., 51,
No.9 (1955). pp. 399-402.
Ref.7: Chow: Phase equilibria for a complex mixture. Proc-Roy.
Soc., Ser. A, 192 (1948), PP. 340-364.
Ref.9: The operators report on safety in air and ammonia plants.
Chem.Eng.Progr., 55, No.9 (1959), pp. 49-54.
ASSOCIATION: ZAvody Vitgzn6ho xinora, n.p., Hradec KrAlovi
("Victorious February" Works, Hradec KrAlovO)
Card 7/8

VINS, Ladislav.
"Use, operation and maintenance of hydraulic drives and machine
tools" by Josef Pivonka. Reviewed by Ladislav Vins. Stroj vyr
10 no.7072 162.

BAB4A, V.; VINS, L.
Special high-speed wrenches. Stroj vyr 9 no.12:624-625 161.
1. Tona, n.p., Pocky (for Babka) 2. Zavody 9. kretna, n.p., Praha
(for Vins)

VIN: S, L.
Pesi7n and producti,~n of sinp,,Ie-pu-,-),,,
1. -machines in factorie5. p.2CO.
(Strojirenska Vyroba, Vol. 5, No. 5', Yay 1957, Praha, Czechoslovakia)
1,
SC: Yonthly List of Fast Furoppan Accesvons LC Ao
- . Vol. (,) w, . e, J~r-'7. Uncl.

.
YAchine for toring h,les in the brako~ drumz of motorcycles.
P. 322
Vol. 3, no. 8, 1955
SIRWIRENSKA VYROBA
Praha, Czechoslovakia
Source: Monthly List of East Earopean Accesionsp (EEAL), LC, Vol. 5, no. 2
February 1956, Uncl.

111N~1'1 L.
Single purpose machtwm, and Amerl-can autom-itic producttrm linns.
P. 10", (StroJimnsh Vyroba) Vol. 5, -,10. 7, JOY, 1957, 1~rahi, C,.-.achoslova~ia
SO- Vorrthly Index of 'East European Acessions k-E!-:A!) voi.. 6, ~o. la Novem~%.r 1',;5.,;

vi NS It L.
VINSO L. Air press and its use. P. 113
Vol 4 no 3, Har. 1956
~~imkZh VMOU
TECHNOLOGY
Frahas Czechoslova)da
SO: East European Accession Vol. 6.9 no. 2. 1957

VINSt Ladialav
"Rydraulic drive" by fGSc.1 Josef Prokes. Reviewed by
lAdiBlav Vins. Stroj vyr 12 no-4:309 Ap'64-

P2 103DW
-c s
.1, ant,
14 7

V-J.14S, V.
"Abstract of the traffic rules for ciriving Pioneer motorcycle." p. 766
SVET MOTURU. Praha, Czechoslovakia, Vol. 9. No. 2h, Nov... 1955
Monthly List of East European Accessions (EEAI)j LCp Vol. 8. No. 93 September, 1959
Unclas

ITINS, V.
Third in Europe. n.280, (Svet Notoru. Praha. Vol. 11, no. 9, Apr. 1057.)
SO: Monthly List of East European Accessions (EEAL) LC., Vol. 6, no. 7, July 1957. Uncl.

VIN"I!, V.
(bk) Motor vehicles on the installment plan. r). 284. (Svet Votoru. Fraha. Vol. 11, no. 0
Apr. 1957 -)
SO: Monthly List of East European Accessions (EEAL) LC., Vol. 6, no. 7, JulY 1957. Uncl.

Vinp, J.-
Vine, V. Attention; winter! p. 141.
V. R. Socialist competition in winter maintenance of highways.
po 141.
Ht. The Hvezda 500, formla 3. p. 142.
Vol. 10, no. 5, Mar. 1956
SVET MOTCRU
TKHNOLOGY
Czechoslovakia
So: East European Accessions, Vol. 6, May 1957
No
, - 5

Vine., V.
Vins, V. Traffic signs and highways. p. 571.
Vol. 10, no. 18, Aug. 1956
SVET MOTORU
TECHNOLOGY
Czechoslovakia
So; East European Accessions, Vol. 6, My 1957
No. 5

11
I /
V ! ;! -~ - L I

111 ~~' SJ
37~
.,Ixplaininj, and rm -h-,irij r, of throli,.,h t1raffic.
Learnim- bout the transltional t~-pe3 of JA-'A-C-' irotorcycles. (To L,,-- co.-,t,,'.
, a!
P. 376.
:-'OTOa,'I!, Praha, Vol. 9, no. 12, June 1955.
SO: I-Ionthl., List of E,,st Zuropean Acce3sions, (E',-,AL), LC,, Vol. 14, 110. 10, Oct. 1955,
Uncl.

VINS, V.
"Record of the year of 1953." (p. 216).
"What you don't know about the protective shield." (p.217).
pro spolupraci a armadou) Praha, Vol 8, No 7, Apr. 1954.
SVETA YOTORU (Svaz
SO: East European Accessions List, Vol 4, No 8, Aug 1954

V32132 ;.
"Refiewal of Drivers' Liaensese" p. 679 (s-,'ET nown. Vol. 8, No. 22,1
Oct. 1954; Praha, Czech*)
So: Monthly List'of East European Accessions, W, 1101. .14, 110- 4,
April 1955, Uncl-e

- - -- - - -- - ---m
VINS ~ V.
"Traffic Accidents Cauged by Pcor li-ghting." P. 43 (Svet IMotorup Vcl. '~I, no. 13qp
Jan. 1953, Praha)
East European Vol. 3p No. 3 1954
SO: Mont List of lzmd= Accessions,/Library of Congress, Varch i9", Uncl.

VAS, V.
"New and changed traffic re~,-.lations.ll (Io be contd.) p. 550 (Svet Motoru, Vol. 7,
No. 154, Sept. 1953, Praha)
SO: K)nthly List of East Europetin Accessiong, Vol. 3, No. 6, Library of Congress,June.
1954, Uncl.

V11's, V.
"New Year's Resure.11 p. IF (Lvet Votoru, Vol. 7, no. 137p Jan. 1~53, Fraha)
SO: Monthly List of East European Accessions. Vol. 3, no. 2, Library of Ccnaress,
Feb. 10,54, Uncl.

VINS, 7'.
Preventive maintenance of the F---KK device for testinp the smoothness and air
permeability of paper. p.109.
(Papir A Celulosa, Vol. 12, No- 5, May 1957, Praha, Czechoslovakia)
SO: Monthly List of East European Accessions (EEAL) Lr. Vol. 6, No. 10, Sept. 1957. Uncl.

VINS) Vaclav
Driver's enemy, snow., sleet,, fog. Siln doprava 1l no. 12:
24,25 D 163.
- - - -1 - - - -

i. I ': ~. I
CZECHOSLOVARIA/Cherdeal Technology. Chemical Products and K-5
their Applications. Cellulose and Cellulose
Products. Paper.
Abs Jour: Ref Zhur-Khimiya, 1958, No 1, 3312
Author VinB Zd.
Inst IT----
Title Preventive 1,1,ai&,,enance of Bekk's Device for Determnining
Paper Smoothness and Permeability to Air.
Orig Pub: Papir a celulosa, 1957, 12, No 51 109-110
Abstract: It is pointed nut that correct operation of the device
is upset by the formation of an amalgam. The basic
rules and practical directions for the correct mainten-
ance of the device are considered.
Card 1/1

MIEDLISKIY, Yu.N., inzhener; HEI VITSKIT, A.M.. inzhoner; VINSMYN. I.S., Inzhenes
44%~ __ -
Kilns vith conveyer calcinatere put in operation at the Krivoy Reg
cement will. Moment 22 no.2:12-14 Mr-Ap 156. OUA 9:9)
(Irivor Rog--Cement industries) (Kilns, Rotary) (Conveying machinery)

ANISIMOV, N.M.; AR IYIIV, V.A.; YOSHTM. 3.S.; ZATSKM, N, V.G.
Pneumatic mixing of rav mixes. TSement 26 no.5:19-22 S-0 160.
(MIRA 13:10)
(Krivoy Rog--Cement plants) (Mixing machinery)

MESH, L.Ya.; KAMINER, D.M.; VINSHTEYN, I.I.
Temperature reivulator haned on a et'jf-exci"d velf-oscIA Ila 411cr.
Avtom. i prib. no. 109-60 Ji-Mr 164. (HIM 171rj

V . - . . . " - - - 1.
. , , '.. i . .
W.YK-IMISMY) '.. p !!I.-. f -.1 .." ... i r,.- i ~.
1. -- I . f~. .; .,
M,othcxj ':; "I.: ": , .*,~~,
k .. :.
ve"It. 1-i -, L ~:~ , 1 lpl:8)

ACCESSION NR: AP4020321 S/0302/641000/0011005910060
AUTHOR: Mesh, L. Ya.; Kaminer, D. M.; Vinshteyn, I. I.
TITLE: Temperature controller based on a self-excited oscillator
SOURCE: Avtomatika i priborostroyeniye, no. 1, 1964, 59-60
TOPIC TAGS: temperature controller, dc temperature controller, transistorized
temperature controller, thermistor temperature controller, transportation type
temperature controller
ABSTIUXT: The shortcomings of dc-supplied temperature controllers are
briefly reviewed: "bimetallic sensors are unstable while dilatometric switches
often do not ensure necessary reliability because of microleakages... "; dc
amplifiers are unstable particularly in the -40+ 50C range; dc-ac conversions
complicate the system. Free from the above drawbacks - as claimed by the
authors -is a new temperature controller based on a transistorized oscillator
Card 1/2

ACCESSION NR: AP4020321
with phase-controlled self -excitation; the controller is intended for mobile
installations. The oscillator is excited only in the case where the unbalance
voltage of a the r mis tor -containing bridge has a certain phase relation to the
voltage of the oscillator emitters. A differential gap of 2-3C is ensured by a
positive feedback. Tests showed t-hat, within -40 to +50C, th6 set point drifts.
by only 0.2C; and the differential by only 0.3C. The change In threshold sensi-
tivity caused by aging-of elements and arnbient tenperature variation has hardly
any effect on controller operation. Cria. art. has: 1 figure,
ASSOCIATION: none
SUBMITTED: 00
SUB CODE: IE
Card 2/Z
DATE ACQ: 3lMar64
NO REF SOV: 000
ENCL: 00
OTHER: 000

BAKHMUTSKIYJ, V.F. (Llvov); VINSHTEMI., I.I. (Llvov); SAS, S.Ye., (Llvov)
Use of impulse power supply for measurement bridge circuits with
semiconductor thermistor in aevices of two-position temperature
control. AvWm. i telem. 22 no.2:259-262 F 161. (MIRA 14:4)
(Bfid& 6ircuits) (Temperature regulators)

s/io3/6i/022/002/013/015
B019/BO60
AUTHORS: Bakhmutakiy, V. F.1, Vinshteynj_..I..I., Sas, S. Ye. (Llvov)
TITLE: 'Use of a pulse feeding of a measuring bridge with semiconduc-
thermistors in two-position temperature control devices
PERIODICAL: Avtomatika i telemekhanika, -.v,. 22, no. 2, 1961, 259-262
TEXT: A'atudy has been made of the heat balance of a semiconductor
thermistor with pulse feeding. By way of introduction, setup and use of
two-position temperature control devices are discussed in general. The
investigation proper is made on the bas!a of the diagram shown in Fig. 1.
This diagram consists of the pulse generator JG, the measuring circuit YK,
the semiconductor thermistor ST, and the two-position indicator 71. The
following relations are given for the power dissipation in the thermistor
with pulse feeding:
JP with n(tp + ti):~ t !~ (t + ti) + t1 (1)
P(t) P ,
0 with n(tP + t ,) + ti:~- t ::: (n + I) (tP+ ti)
1/4

S/103/61/022/002/013/015
Use,of a pulse feeding B019/BO60
t denotes the pulse duration, tP, the time between the pulses, P th; PC
,per pulse. The following heat oonduotion equations are given by taking
acoount of (1)..
dT/dt +.T/,r . GZr + (3)
dT/dt + T/,c . Q/v (2)
Solution TO) is obtained for the n-th pulse, and solution T for the
n n
-time between the n-th pulse and the (n+l)-th pulse, and therefrom, by a
passage to the limit n 5% oo, the solutions
In+ fx in.
Axp -GXP-T I,
T(11 + OTP OTP exp
cc
a + Ix
elp
IX
alp alp
Jr V
exp (7)
in+ in
exp
Card,2/4

8/103/61/022/002/013/015
7se. of a pulse feeding B019/B060
are obtained. From these equational one obtains formula
t9+ 'K
8XI (8XP.M-
which permits determining th'epower.gain obtained by the use of a pulse
feeding of the measuring bridge. As may be seen, the power gain increases
with growing tp/T and decreasing ti/T, in which case, however, there exist
limit values of these quantities. These limit values are determined, on
the one hand, by the measuring instrument, and'on the other hand, by the
,temperature change in the object.
Fig. 1
Uln
There are I'figure and 3 Soviet-blocreferences.
L-C'~rd-3/4

Use of.a pulse feedirig ...
SVBMITTED: April 5, 1960
89182
8/103/61/022/002/013/015
Boig/BO60
V)~

VINSHU L, insh,-arkhitaktor
loomomical methods for building residential sectiozo of collective
farm villages. Sol'. stroi. 12 no.4:20-24 Ap 158. (NII[k 11:5)
(Yarm buildings)

VIESKI., Ivo., dr,, naucid savjetnik (Zagreb., Nameiceva 2)
Growth of capital assets of Yugoslavia in the postwar period.
Tehnika Jug 18 no.l.-17-24. J& 263.
1. Kkonomski institut ]MR fIrvatskep Zagreb.

VINSKI, Ivo. dr., Zagreb
lconomical consequences of Injuries in Croatia, larodno sdrav,,
Beogr. 10 no.6:181-186 1954.
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