SCIENTIFIC ABSTRACT VITORSKIY, A.P. - VITRIK, D.I.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001860120018-4
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: September 1, 2001
• Sequence Number: 18
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

SCGNOVSKIYI A.T.; T1140FLYEVA, L-P-; VITOBSKIY, A.P.
- .
Session of the White Russian Scientific Research Dermove-
nereological Institute. Zdrav. Bel. 9 no.1:93-94 J163.
(MIRA 16:8)
(WHITE; F.USSIA--DEM4k2OLOGY-GUIIGRFSSFS)
(WHITY RUSSIA-VEli7ERULOGY-COIrRESSES)

VITOVSKlY, A.P.
- '
'r apar
i~ Rti' "tMent houses using large-sIzed silicate blocks, Makh.
trud.rab. 10 no.5:19-21 W 156. (HLRA 9:8)
1. Glavnyy inzhener trouts. No. 86.
(Kharkov--Apartment houses) (Building blocks)

KUZITETSOV.. N.A., otxr.r~:d., VITKOVSKLY, A.P., red., BOZHENKO,
-1. G.
Ye.F., rell., red.; GRINEK, V.S., red.;
I ., N.S., rhj.: Y~*~UFA, G.D.., red.; RAZE)OBAU.11, V.I.,
IGRUNOV -
red.; RYABOMMMKO, V.I,, red.; SlITENOV, M.K., red.:
CHEFRANOV~ Ml'~ red"; FUNSKLEYN, D.A., red.;
PETROPOLISKAYA, O.A., red.
[Belror,A Boller-Making Factory] BelgorodskiL kotlo-
T
stroltellnyi. Voronezh, TSentrallnoe-Charnozemmoe knizh-
ri (MIRA 18:7)
noe lzd-vo~ 19"4. 185 p.
1. Belgoriz!dskiy Gosadarstvenn7y k4Dtl:).Aroitellny7 zavod.
2. Direktor P-girnrodskop Gosudarotvmnogo kotlostroitell-
nogo zavoda (fcr rivfr,,iyiov). 3. N&-zhallnik byuro tekhnl-
cheskoy lInforniaLsil i i-_ob.-l3tqt,7,!'itva Belgorodskogo Gosu-
da-r-qtveny).ogcj kotlostroitellno,-~) zir,%-xin (for Gavrilenko).
4. Glav-nyy konstrukt,)r spetsiallnogo konstruktorskogo byuro
energeti,~heskikh kc-;tl.~_--v Belgorudsk,-,,o Gosudars~llvenno-o kot-
lostroltellnogo zavodka Ifor ~-Oiv,!iiov). 5. ZamostiLell glav-
nogo inzhenera Bel#pr)r,.)dakx,o
stroltellnoga zavada (for Ryah~okolcrjlenko).

IF

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ME I

24-7100
AUTHORS: Belyayev, T_
TITLE; Some Charitres
d
PERIODICAL: Kristallograf*iya,
M., Vitov31cly, 13 V., D~)hfzhan_-kly, G. F.
In thu Methods of Ci~yst-,~,0 Gro~.-,th
1959, Vol 4, Nr 5, I-)P '(91-794 (US3R)
ABSTRACT: The three chan.ines suce3sfully tested by the authors
are: (1) The temperature at the face of a crystal ,,,row-
ing of molten phase chantres because of' the chan;~infr
solid ratio, 1,11han,,ing concentrat ions of' irdmixtures,
liquij
etc. Consequently, the composition of o-ro,.-in crystiils
may be uniform. To avoid the t-emperature change, a
heater was placed in the molten phase and slo,~,,ly
pulled toward 'Ghe growing crystal to maintain its
temperature, controlled by a thermocouple, constant.
(2) The crystals ,whose solubility hardly changes !,,.,ith
temperature are usually grown by evaporation of the
solution, for example, in the crystallizer developed
by Robinson. The chanL-.ed variety of' the method pro-
Card 1/1~ vides constant temperature of a growing crystal and

Some Changes In the Methodo of' Gi-ovith 6010
absorption of the vapor. The .--rystal'i Lzer (Flj.". 2)
consists of glass container 1, placed upon electric
heater 2, adjuster 3 providinr, a constant temperature,
thermometer It, cap 5, mantle () for holdin,r; vapor-
absorbinf, cotton '(, capillary pipe with cock to
control drainInC or the condenosed vinar,
magnet that rotateo stirrin- rod l'). 0/
method OOL Cr,rStal 1-ro,,Ith of molten i-)hase is chani-ed as
shot-in in Fi,-. -1. The q1_iart;- tube, of" the chamber
crystallizer, placed on plate 1. Is heated by
Crystal holder e,-.-tend*n- through W-Jison's
a Joins reducer that transmits rotation from motor to
the crystal holder provjdin~- the lattterls r-otation at
the rate of 2 rpm. Cap 4 and ot'her, p~Wts iolln throuf7h
vacuum packin-r. The chamuer is pi.imped out to hi_.;-jl
vacuum or filled in .-:1th inert or, -in,[ oti-,er i-as throu~-h
pipe B. The compre,;sed poi-Aer of the Compound
to be crystallized is placed In MOntle
with heatinj- .-jindIn1rr in, and is coaxial -.Ath the crystal
. otatlw, i vvsta
or Ito seed 6 stuok on th( r 1, -1 holder. T, i e
Card 2/4 briquet-to-cry.,t-D.J. (II.Aaw.-e I,", coni'vol.k~(I b-1 the

Some Changes in the Methods of CrysLai Gro,.~.ri 76oi,o
rig 2
Card 3/4
5-32/J,:?6
rig 3

Some Changes in the Methods of Crystal Growth 76olo
SOV170 4-5-32/36
ASSOCIATION:
SUBMITTED:
Card 4/4
briquet-holding shaft up or down. The heater of the
protecting mantle melts the briquet gradually; the
molten matter drops upon the crystal and provides its
growth. The X-ray diffraction data proved that the
grown crystals were monocrystals. There are 4
figures; and 3 Soviet references.
Crystallographical Institute of the Academy of Sciences
of the USSR (Institut kristallografii AN SSSR)
May 23, 1959

VITOVSKIY, B.V.; DOBR711ANSKIY, G.F.
Method for growing layers of modified composition on a crystal.
Kristallografiia 9 no-4:579-580 JI-Ag 164.
(MIRA 17:11)
1. Institut kristallografii AN SSSR.
.jk

VITOV3KIT, B.V.; ZIWMV, A.B.
Imothermic-mirfac* fusion crystallization outside the heated zone.
Trudy Inst.krist. no.9:349-352 f54. (KLRA 7:11)
(Crystallography)

VITOYfflY. B.V.
Method for the calculation of rational angles of organic crystal
face gradients. Trudy Inst.krist. no.9:367-378 154. (MM 7:11)
(Crystallography, Mathematical)

V i 7_61 VSK / 6 /~ V/
Cat6gory : USSR/Optids - Physical optics
Abs Jour : Ref Zhur - Fizika, No 1, 1957,flo 2373
Author : Vitovskiy, B.V., Anikin, I.N.
K-5
Title :-Vff-tWe__M5ffffe_acence of Artificial NaCl and KC1 Crystals with Various Activator
Impurities
Orig Fab :Tr. In-ta kristallogr. AN SSSR, vyp. 11, 200-205
Abstract :An investigation was made of the lumineacence (L) of monocrystals of NaC1
and KC1, activated by Ma or Cu by adding MnC12 or CuC12 to the melt. Tables
of the coloro and intensities of the L and the spectra of the L are given for
excitation at 250, 280, 113, and 365 ~U- In the case of NaCl-ffn (0.025--10% Mn
C12) and KC'-Mn (0-1 -- 7-0% MnC12) the L spectrum shifts towards the longer
waves with increasing Mn concentration, End in the case of KC1-Mn two maxima
appear. NaCl-Mn has a brighter L than KCI-Ph, and has a maximum L intensity
at 4--5% lAnql. In the presence R moisture, NaC1-MU gives a brigFt orange glow.
NaCl-Cu (0.012 -- 10% CuCl3) and KCl-Cu (0.012--5% CUC12) have an azure-green
and blue-violet glow wbeen excited at 250 and 280 mu respectively. Increasing
the Cu concentration shifts the maximum of the L spectrum of HaCl-Cu toward the
shorter waves. The L of KCI-Cu is brighter thaE that of NaCl-Cu. The optimum
content Of CuC12 is 5.1% for both Rho5phors.+ An investigation wapmade of the
L of NaCl and KC1, activated by Ti , Ce, Ag , Mn2+, Fb2 , and MnWr by thermo-
~lectric diffusion from the anode'into the crystal at 5500 and 120 volts.
Card

Category USSR/Optics - Physical opticj
Abs Jour Ref Zhur - Fizika, No 1; 1957 No 2373
K-5
A pronounced connection is seen between the brightne5s of the L and the radii
of the base activator ions. lf the radius of the activator ioE is equal to
or greater than the radius of the base cation, the activator will wither dif-
fuse into the crystal with difficulty or will not diffuse at all, and the
crystal will. produce a weak glow.
Card

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24-7100
77127
S071/7,
AUTHORS: V.4tOV3kiy, B. V., Tatarinova, L. I.
---------------

TITLE: -
Phenomena Observed on Photoemulsion and Glass at "~,.e
Contact With Quartz (Preliminary Communication)
PERIODICAL: Kristallografiya, 1959, Vol 4, Nr 6, PP 931-933 (USSR)
ABSTRACT: The authors disclosed that a latent image on a film or
plate disappears if a quartz crystal or plate has rested
on it for a long time before development. The spot
directly under quartz becomes completely regenerated.
The degree of regeneration decreases with increased
distance from quartz. Experimenting further, a film
was exposed to light and left for 1 year partially
covered with a round quartz plate. Then a drawing was
photographed by contact printing. The circular part
of the film, covered with quartz, proved to have restored
its sensitivity completely, i.e., the photograph ,.;4 tinin
this part was as clear as if taken on fresh, film, while
the parts beyond the quartz cover remained blank.
Card 1/3 Another photoplate, of which half had been exposed to

Phenomena Observed on and Gias.,; ~111/IZ
at the Contact Wifh Quavtl z (Pt'(,-l 1., nary 0'// A
Corimun ica f. Ion )
liFht and the other half not exp~)sed, ,-,,a,, lef"'.
covered with a quartz plate that had a pencil drawilnw.
After development, of the plate, Its unexposed half
did not show any radiation effect, proving thal till)
radioactive substance was present in the quartz. The
exposed half became regenerated, except below thle
pencil lines of' t~-.e drawing, ,-;hich consequently left
its print within the exposed half of the Diate. The
aut'nors also found that after a long rest quartz lea,:es
a print, on glass or anY other clean subject. Th e
prin~;s ha*/--"ng lr-~.-e same form as regene--a'--eJ sp:2tS
on exp--sed filrs are forT~,ed 11-y thin cna4Anp
I - --g
thic'Imess --.-adually van-':;1hes f-Dr.1 the quartz co,-.,ere*-J-
spot toward the edge of the glass. The ccating can
easily be rubbed off with the fingers. TI-e study of the
coating matter by electron diffraction methods disclosed
its cubic structure with a = 5.68 A. The interplanar
spacings are the same as in CL-cristobalit-e whose
tetragonal unit cells have a = 4.90 A and c = 6.92 A.
HoT.-iever, since the coatinS, matter is cubic, it --ann--t-te
Card 2/3 cristobalite. SiO is cubic with a = 1--1.16 A, but it is
to be unstable a'C; low temperatures. S-' is cubic wil~'In

Phenomena Observetl on Photoemulsion and Glass '7712~7
at the Contact With, Quartz (Pre-
11 m, 4-1 na r Y 0
Communication)
ASSOCIATION:
SUBMITTED:
a = 5.42 A. Some of the electron diffraction
photographs had many additional lines not yet identified.
It is believed that the deposition of this coating
matter causes regeneration of the exposed photofilms.
A few more experiments that produced spotty coatinL~, of
celluloid through circular holes furnished contradict;o-ry
results. There are figures.
Crystallon.-Taphicall Institute of the Academr of Sciences,
USSR (Inst-itut kristallografii AN SSSR)
December 2, 1958
Card 3/3

ACCESSION HRt AP4043199 ~S/0070/64/009/004/0579/0580
AUTHORs VLtovskly, Bo V.1 Dobrzhanakiy, 0. 1P.
TITLEt Method for growin''i" layers of varied composition on a
crystalline substrate
'SOURCEs Kristallografiya v. 9, no. 40 1964, 579-580
TOPIC TAGSi single crystal growth, thin layer growth, melt crystal
.growth, solution crystal growth, crystal growth apparatus, cesium
iodide crystal, manganese activated cesium iodide
ABSTRACT: A new method and apparatus are described for growing
single crystal layers with periodically changing properties. The
method would promote expansion.in the technological application of-
crystals* Basically, the growth of crystal layers is achieved by
lahort-time immersion of a seed crystal in a superheated melt or
solution and subsequent transfer of the seed into the crystallization
:Zone, in which it is retained for a period of time necessary-for
;c0
mplete crystallization of the liquid layers This double process
t6rd 1/2

:ACCESSION MR: AP4043199
'is performed in an electric resistance furnace with two separately
controlled heaters. The transfer of the seed is accomplished by
~means of an eccentric device which transmits a reciprocating motion
;through a lever to the seed. The desired thickness is obtained by
irppeated immersionsb Single crystal layers of Hn-activated pesium
were grown on cesium iodide crystals-of v&rious shapei and
dimensionse Orig. art* hast 2 figures-
1ASSOCIATIONs Institut KristallografiL AN SSSR (Institute of
iCrystallographyl AN SSSR)
ISUBMITTSDo 25J&n64 ENCLt 00
SUB CODS 1 88 HR REY SOVI 001 OTHERt 000
Card 2/2

L 44co6-66 Ei,T (_rn)/T/:;,,1P(t)/ET 114 13 ( cJ PI/' G
ACC NRi AP6029873 SOURCE CODE: UR/0413/66/000/015/b6l6[[66do~i-
INVENTOR: VitovikiZ, B. V.; Netesov, G. B.; Chernyshev, K. S.; Dobrzhanskiy, G. F.
ORG: none
TITLE: A method of, slagiLcr LUIS. lass 12, No. 184246 L
M_ I (C
SOURCE: Izobret prom obraz tov zn, no. 15, 1966, 26
TOPIC TAGS: single crystal, single crystal growing, homogeneous single crystal
ABSTRACT: This Author Certificate introduces-a method of growing single crystals of
substances which decompose at below-melting temperatures. The crystals are grown
from a gaseous phase in a hermetically sealed ampoule moving in a furnace with prese
temperature conditions. The crystals are grown with or without an oriented seed.
Homogeneous single crystals are obtained by rotating the ampoule around its axis
which coincides wUh Me vertical axis of the furnaces and simultaneously moving it in
upward direction. (MS)
CODE:.20/ SUBM DATE: 22Mar65/ ATD PRESS:5-0,>~
Card 1/1 hlff UDC: 548.522

BFLYAYEV, L.M.; IIITIOVSKIY, B.V.; DOBRZHANSKIY, G.F.; KARPENW, A.G.
Modified cr7stallization tardr.. Kristallografila 6 no.Z:286-287
Mr-Ap 161. OURA 14:9)
1. Institut kristallografii AN S&SR.
(Crystallization)
- 4

VITOVaIY., BIV.; TATARINOVA, L.I.
Phenomena observed on a photographic emulsion and on glass in
contact with quartz. Kristallografiia 4 do.6:931-933 N-D 159.
(MIRA 14:5)
1. Inistitut kristallografii All SSSR.
(Photographic emulsions)
kQuartz)
(Glass)

s/wo/61/oo6/ool/Olo/oll
E073/E335
AUTHORS: Karpenko, A.G., Belyayev, L.M., Vitovskiy, B.V.
and Dobrzhanskiy, G.F.
TITLE: Crystalliser for Growing Crystals by the Evaporation
Method
PERIODICAL: Kristallografiya, 1961, Vol. 6, No. 1,
pp. 146 - A7
TEXT: In spite of numerous advantages of this method
it has been relatively little used. Its main drawbacks are
a decrease in the volume of the mother liquor during
crystallisation, loss of solvent during evaporation (important
in the case of poisonous or expensive solvents) and
impossibility of obtaining a continuous process of crystal-
lisation without having to fill the crystalliser with saturated
solutions. The latter is particularly important in crystal-
lising substances which are difficult to dissolve. The authors
propose a design of crystalliser which enables continuous
crystallisation by evaporation in a closed crystalliser without
loss of the solvent, maintaining a constant level of the
Card 1/8

S/070/61/oo6/ool/olo/oll
E073/E335
Crystalliser for Growing .....
mother liquor. The crystalliser does not require any
pumping systems or any other forcing devices for maintaining
a constant level and the desired degree of saturation of
the solution. Transfer of the substance to be crystallised
from the solution zone into the space where crystallisation
takes place and maintenance there of the required saturation
Are by means of natural circulation, including evaporation
of the solvent, its condensation, return of the condensate
into the zone of solution of the substance and movement of
the solution into the zone of crystal growth. The crystal-
liser, Fig. 1, is mounted on an electric heater and contains
all the apparatus for maintaining and controlling the
Temperature. It consists of three coaxial vessels, fitted
one inside the other, in such a way that the first (external)
and the second (middle) intercommunicate at the top whilst
the second and third (inner vessels) intercommunicate from
the bottom, The edges of the first and third vessels should
be above the level of the mother liquor, whilst the edge of
Card 2/8

5/070/61/006/001/010/011
E073/E335
Crystalliser for Growing .....
the second is a few cm below the level of the mother liquor.
The first vessel is intended for dissolving the crystallised
substance and for receiving the condensate. It also serves
as a settling vessel and a thermostat. The second vessal
serves as a carrier of the solution and has a seal preventing
the failing of germinations from the zone of dissolution into
the crystalliser. The third (internal) vessel is the
crystalliser. The communication between the lid of the
crystalliser and the first cylinder is by means of a ground
surface. In a crystalliser of this design, a "continuous"
complicated cycle of mass transfer from one state into another
takes place. The crystalliser is filled with a solution
which is saturated at a given temperature. The degree of
filling can be seen from Fig. 1. At the bottom, between the
walls of the first and the second vessels, the excess material
is fed in which is considerably greater than the weight of
the crystal to be produced. The geometric dimensions of the
vessels are so chosen as to obtain an evaporation surface in
Card 3/8

S/07o/6i/oo6/ooi/oio/oil
E073/E335
Crystalliser for Growing
the first and the second vessels, which is considerably
smaller than the surface in the third vessel. During operation
of the crystalliser condensation of the solvent will occur
at the inner surface of the lid and the top part of the first
vessel. The lid is made semispherical or conical so as to
ensure that the condensate returns only into the first vessel
where dissolution of the recrystallised substance takes place
as a result of continuous inflow of solvent. Since the
vessels intercommunicate,a constant hydrostatic level difference
is maintained~ which is governed solely by the difference in
the density of the solution in the first and third vessels
and in the system as a whole constant concentration flows will
establishe themselves, as shown by arrows in Fig. 1. The
solvent evaporated from the third vessel is replaced by a
quantity of solution of equal mass from the first vessel. In
this way, there will be a continuous transfer of thS
crystallising substance from the solution zone into the
card 4/8

S/07o/61/oo6/ool/010/011
E073/E335
Crystalliser for Growing
crystalliser, as a result of which a constant saturation
is maintained in the crystalliser. The specific degree of
saturation will become established at a given temperature
which hardly changes at all with the growth of the crystal.
Under otherwise equal conditions the degree of saturation and
consequently the speed of growth of the crystal is controlled
by changing the temperature of the solution. Furthermore,
equipment can be designed which permits changing (increasing
in the -base of a positive temperature coefficient of the
solubility) the evaporation surface of the first and the
second vessels in accordance with a given programme. The
temperature field of the crystalliser has a small gradient
directed from the bottom upwards. The thermal effects of
the reactions in the system are localised and can be easily
taken into consideration., Mechanical mixing of the solution
in the crystalliser is by means of a magnetically actuated
mixer. The reliability of the described crystalliser was
verified under laboratory conditions for a number of substances,
Card 5/8

S/07o/61/oo6/ool/olo/oll
E073/E335
Crystalliser for Growing
including substances of low solubility, Figure 2 gives a
photograph of the equipment. There are 2 figures and
I Soviet reference.
ASSOCIATIONs Institut kristallografii AN SSSR
(Institute of Crystallography of the AS USSR)
SUBMITTED3 May 26, ig6o
Card 6/8

L 0 7 3 3 3 5
Crystalliuar for Growing
F ig. I :
1 first (external) vessel
2 second (iniddle) vessel
3 third (internal) vessel
4 lid
5 magnetic mixer
6 magnet
7 electric heating elements
b? contact thermometer
9 substance to be
crystallised
10 - germination
Card 7/8
T.
I'Ll
i
-

I
Jill W N

-7- 77
~ I
1',

S/07c/61/oWool/olo/oll
E073/E335
Crystalliser for Growing .....
Fig. 2:
Card 8/8
0
PHe. 2

57-23-3-4/33
A-UTHOR3: Vitovskiy, N. A. '.!aleyev, P. I. , Ryvklir",
TITLE: The Mechani3m of Pulse Formation in Crystal Counters at the
Formation of a "Through ConductIng Channel" (!.fekhanizm
formirovaniya impullsov v kristallicheskikh schetchikakh
pri obrazzovanii "skvoznogo provodyashchego kanala")
PERIODICAL3 Zhurnal Tekhnicheskoy Fiziki, 1958, Vol. 28, 11r 3~ PP-460-469
(USSR)
ABSTRAM The authors here investigate the peculiarities of the mecha--
nism of pulse formation for the case where the ionization
range extends from one electrode to the other. As lop'6ing
agent the authors used ot-particles of polonium (Po with
an energy of 5,3 MeV. In order to realize a "through"
passage of the m-particles through the samples2 thin CdS.-
-monocrystals were selected. The investigations showed that
the process of pulse formation according to tile "through
current" system may take place &b least in two different
forms. 1) The first variant can be realized by the construc-
Card 1/3 tion with a one-sided application of the electrodes or in

5-j-23-3-4/33
The Mechanism of Pulse Formation in Crystal Counters at ihe Format~_on .~f a
"Through Conducting Channel"
thick crystals with electrodes applied on both sides. Here
a through current which is limited by the resistance of
the "dark sections" of the c rystal flows in the pulse. In
such a counting arrangerent the "dark"-conductivity of the
crystal plays the decisive part. A considerable increase
in the pulse height can in this process be attained by an
increase in d (I'darkmconductivity), e.g. by a rise of
temperature. 2)oThe second variant can only be observed in
sufficiently thin crystals in the case of "twc.-sided" appli-
cation of electrodes. Here the passage of the Dc--particles
through the crystal can take place and a "conducting channel"
between the electrodes can be formed. The pulse height is
in this case not dependent on the initial conductivity of
the sample. It is to be expected that a similar mechanism
of pulse formation will even occur In the case of some iso-
lating crystals, in case the life of the current carriers
not being in equilibrium in them (i.e. the crystals) will
no'. be too amall and electrodeL forming anti-barrier-
-layers are oclected. The autbors performed an experimental
investigation of the process of pulse formation in "thin"
Card 2/3 counters at the for,,jation of a "conductirg channel". It is

57-28-3-4/33
The Mechanism of Pulse Formation in Crystal Counters at the Formation..of
"Through Conducting Channel"
shown that in such a case the simplest variant for the for-
mation of pulses can be realized according to the schemd
of the passinir, current. The obtained experimental results
are in good a0reement with the prediction of theory. The
high quality (from the point of view of pulse-height) of
the counters with thin crystals and"two-sidedif applied
electrodes is pointed out. In this construction the pulse
heights attain 20 V and amount to up to 90 clt of the
voltage applied. There are 11 figures, 1 table, and 3
references, 3 of which are Soviet.
ASSOCIATION: Leningradskiy fiziko-tekhnicheskiy institut AT; SSSR
(Leningrad Physical-Technical Institute AS USSR)
SUBMITTEDi Novenber 20, 1957
1. Crystal counters--Analysis
Card 3/3

-:z,
A"CleMLY4 naulc U1cr-%tnxxc7 ftzLict

POtOeltletrieliesic lye I ~PtL,Ih, O~ly, yiwlinty.1 v P~luprovodnlkakhj
trudy p4rVOgn Vsvsoyu=r,agj a~,v.!ant:nanlya po eotoclektricheakta Q
L oPticheakin yavl-nlyam v 1-oluprovadnW.ikh, it. Kiyev, 20-26
McYabrylk ".957 a (Pnoto-l-itrlc anti Optleal Pnenrm-na In Seal-
conductors; Trannaatlnz or the nrac cmr~.mnno on Photoelectric
r
d O
403
t
S
Kl
1959
ILA
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9.
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4.000 aaplea prtnt-d. Z
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Additional Sponsoring Agvncyl Aka,kmiya nauk =R. Prozidlum.
Nomisatya PC polupromoanixam. Z
\,~

Ad. of Publishing blouses 1. V. Klaina; Tdnn. Ed.: A. A. Matvaychuk ,
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Renp. JW.& V. Yo. Lasftkarov~ Acad~mlclan, Ukr3inian 359, Academy
of 3clances.
IMPOSS' This book Is lmtena~d rar aclantista In the field of aaftl-
conductor SIC3. solid rlt~tm spectroscopy. and amicanductor _m*
devices. The cclI~ctIcn--w-M -oti to mitya6-a-I -'students in
universities And Infitit"r.03 or IILFA~.r technical tr-jtnLng
specializing In the physic* and teatinical application or aeal-
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COVERAGHt 7ne aollectlon contains roport3 and Information bulletins
(the latter are Indicated by n3&nrU'Krj read at the First kIl-
Union Conference an Optical an.1 Phoujalectric Phenomena in Seal.
conductors. A wide scope of prable= In mentleanductor physics
" technology are conalderedi photocon(wetivity. Phatcalectro.
mative forces. optical propertle3, pnoto-alectrIc c0113 and
photareslators, the actions of hard and corpuscular radiation*.
the properties or thin riles and coa:pl~x amalcondactor systems.
*to. The materials were pmpared for pqbllcation by E. 1.
Rashooy, 0. V. 3nltbcos K. D. Talpygm. A. P. Wbchenkcand M. K.
Sheyrlmman. References and dlacua3ion rall,~ each ~tlcle,
7`;;
"hopoel-tric -4 optical ften- (cant.) SCV/3140
MR Rechanlaft
-:;;!' k.L n ~..
'6PU so$ at Ounterm During the
FOrmAtIon of a *TlU-49ft Conducting Chgoe.j.
10"vklm. 3
L, P So m, B. va -k0. and 0. A.
c W -.at :,"' -Radl-&Tr*n
- I D 0, ;r
Conductfn-C7,5 CO 401~ V. I- -U-t 11-0-
and V, t, Shehqrb&kpvm. The Phat*.
(*,1,*ggr,1O) Srr*ct of X-P-Ym on SemacceduetOr Rectifier C*Ils
I- V. Vorob'yev. and 0 D lAtymh~v.
?*at of the age of
MnSInmering-
Card 15A6
379
r
336
389

VITOVSKIY, IT.A.; IIALEYEV, P.I.
-- --- --o"Ou"Wr
Measurement of the length of the diffusion path of holes in cad!74=
sulfide. Fiz. tvar. tela, 1 no.6:984-985 Je .159. (MIRA 12:10)
l.Leningradski7 fiziko-tekhnicheskiy institut AN SSSR.
(Cadmium sulfide) (Photoelectricity)

j I/. ? 1-2 0 C 67393
AUTHORSs Vitovski N. A., Masho-vet.s,. T. V.) Ryvkin, S. M.
TITLEt Determination of the Number of Acceptor Levels of Defects
Occurring in Germ~Ti_u.m/Under the Action of Gamma Irradist-on
PERIODICALs Fizika tverdogo tela, 1959, Vol 1, Nr go PP 1381 - 1W
ABSTRACT: The radiation-induced formation of structural defects stable
at room temperature had already bt!en investigated sevpral
times, but not all the problems related therewith are -is yet
solved satisfactorily. The presojit paper offers a contribut-
ion by discussing the possi'i.,Iitics of a complete analy2rin of
the energy levels of the defe-cts and by publishing experim~_ntal
results concerning the temperature dependence of PAe Hall
coefficient R.of n-type germanium irradiated by Co"-"-~.rays.
An analysis of these results pcrmits a precise det-ermination
of the number of acceptor levels belonging to one e'_ radiative
defect. To inveBtigate,the temperature dependence of the
carrier concentration in'the pre-ience of multiple-charged
centers, the authors theoretically investigated a level scheme
of a defect (Fig 1), with n in the conduction band considered
Card 1/3 to be composed of four parts (Fig 2a). In this connection the

Q393
Determination of the Number of Acceptor Levels of BOV/181-1-9-11/31
Defects Occurring in Germanium Under the Action of Gamma Irradiation
following was assumedt every defect produced by radiation has
I acceptor- and k donor levels; "ordinary" donors (atOM13 Of
the V group) and M defects exist in such a way in germanium
with the concentration N d' that N d > Ml- n1 i n rlaea weakly
in consequence of transitions of electrons from donor levels
to the conduction band; n 21 full ionization of the donor
levels, n2 a N d_M1 n3: stronger rising of n in consequence pf
transitions of electrons from higher defect levels to the con-
duction band n . N__ M e_AE M1 /2kT n : full ionization of the
3 c 4
upper levels, n 4= Nd- N(1-1). The temperature dependence of n
can thus be represented by the function lg n - f(l) (theoretic-
ally in Fig 2a, experimentally in 2b). A table gives the re-
sulte of several measuring series. It is found that for
r6induced defects 1 - 4, vithLAE14 I being 0.18 ev. The defect
27 2
Card 2/3 formation cross section was found to be cf'- 4.0-10- cin ,ii

67393
Determination (if the Number of Acceptor Levels of Defects SOV/181-1-9-11/51
Occurring in Germanium Under the Action of Gamma Irradiation
Directives for further investigations are briefly shown.
Finally, the authors thank B. M. Konovalenko and I.D.,Yaroshet~-
kiy for exposure of the samples and Sh. M. Mirianaahvili for
~-is assistance in measurements . Ther'e'--a-rs- 2---f-i-gu--r-e-a*, 1 table,
and 3 references, 1 of which is Soviet.
ASSOCIATION: Leningradskiy fiziko-tekhnicheakiy inatitut AN SSSR (Lenip
Institute of Physics and Technology_Rt_jLie__AS-_US
5A)
SUBMITTED: March 24, 1959
Card 3/3

66706
1?, q16 0 SOY/1a0n9d-4R-y8v-k1 n,
A. I- cl/35S k,
Aurims: Vitovskiy. N. Maleyev, P
TITLE: optimum Operating Conditions for the Photo-diodes Used
With Small Signals
PERIODICAL: Radiotekhnika i elektronika, 1959, Vol 4, Nr 8,
PP 1387 - 1392 (USSR)
ABSTRACT: The characteristic of a photo-diode can be expressed by
(Ref 2):
kT (P
I = is ( e 1) + I f + RI (5)
where I is the current flowing through the photo-
diode, RI is the leakage rcsistance of the diode and
y is the voltage across the n-p junction. I is the
"dark",saturation current, q is an electron charge,
k is the Boltzmann constant and T is the absolute
temperature. Eq (5) was employed to plot the voltage-
current chardcteristics shown in Figuro 1. Curves I Tl
tur
Cardi/4 and IT2 show the "dark" characteristics at tempera L~ es

66706
SOV/109-4-8-27/a5
Optimum Operating Conditions for the Photo-d1odes sed With Small
Signals of +20 OC and -78 OC, while Curves Icl and If2 are
the "illumination" characteristics at the same temperatures.
The curves are calculated for a photo-diode which hgs a
"dark" current of 8 ILA and the resistance R? > 10 SL
at room temperature. The quantity R 0 is represented by
ctg a where a is the slope of the "dark" current-
voltage characteristics at y = 0 . This angle a. at
the room temperature is equal to 90 0, while at low
temperatures a = al and tends to zero. If the device
works as a photo-diode with a load characteristic
R = ctg , the load line intersects the characteristics
IT and If in the saturation region; consequently, at
both the low and the room temperatures, the output signal
taken from the device is the same. On the other hand, if
the diode is operated as a photo-electric source, the
intersection of the load line with the characteristic
Card2/4 occurs in the saturation region only at the low temperature.
4-

66706
sov/log-4-8-27/35
Optimum Operating Conditions for the Photo-diodes Used with Small
Signals
In this case, again, the output signal is equal to that
obtainable in the photo-diode operation. From the above,
it follows that the photo-diode can be operated as a
photo-electric source, provided it is maintained at a low
temperature. Under these conditions, it should be expected
that the noise level would be very low. The above con-
clusion was checked experimentally. The principal
experimental characteristic was the relative sensitivity
P which was defined as the ratio of the output signal
obtained from the device as a photo source and as a photo-
diode. This ratio can be defined by Eq (10). The experi-
wental dependence of P on temperature is shown by the
solid curve in Figure 3. The dependence of P on tei,-ipera-
ture for large signals is illustrated by the obtained line
in Figure 3. The noise in the device when employed as a
photo-diode was 0.5 mV, while when used as a photo-electric
source, the noise was 10 IN. The inertia effects in the
diode are illustrated in Figure 5, where the first
Car(13/1, oscillogram refers to the photo-diode operation, while the
A/

66706
sov/log-4-8-27/35
Optimum Operating Conditions for the Photo-diodes Used with Sinall
Eignals
next four oscillograms show the photo-electric response
at various temperaturesi this effect is further
illustrated in Figure 4, which shows that provided the
temperature is about _80 ocl the time constant of the
device is the saine for both the photo-diod aid photo-
electric operation. Thera are 5 figures, table and
7 Soviet references.
ASSOCIATION: Fiziko-tekhnicheskiy institut AN SSSR (Physico-
engineering Institute of the Ac.Se.USSR)
SUBMITTED: June 4, 1958
Card 4/4

22401
5/120/61/000/002/012/042
E210/9594
AUTHORS: Vitovskiy, N. A., Maleyev, P. I., Matveyev, O.A.,
ft`y_vk_f_n~_S,M_._-afid Tarkhin, D. V.
TITLE: Silicon N-P Counters of Heavy Charged Particles
Operating Without an Exterrral Power Supply
PERIODICAL: Pribory i tekhnika eksperimenta, 1961, No.2, pp.82-83
TEXT: 2Fused silicon diodes having an n-p junction area of
about 1 mm have been studied in order to determine their counting
properties when operated as short-circuited rectifiers. The
saturation current in the counters studied was not over 0.1 ILA;
the leakage resistance was several megohms. Under such conditions,
short-circu it current rectification can be realized by using a
250 kilohm load. In counters irradiated with OL-particles under
the above conditions and tested at room temperaturev pulsecrplitudes
reached 2-3 mV with practically no noise. This performance equals
that of counters operating as photodiodes, but the noise in the
latter case increases rapidly with increasing cut-off voltage. In
both cases (operating as rectifiers or photodiodes) pulse rise time
varies from 1 to 5 lisec. The decay time is determined by the R-C
of the circuit. This is shown in the oscillograms, Fig.l. In
Card 1/3

Silicon N-P Counters of ... S/120/61/000/002/012/042
E210/E594
Fig.la the duration of the markers is I jisec. Fig.16 - leading
edge of the pulse; marker duration 0.2 usec. Trigger delay 0.5 11sec.
With decreasing temperature the pulse amplitude and duration remain
unchanged. Silicon n-p counters are regarded as highly promising
since even at room temperature they can operate as photovoltaic
cells without an external power supply.
Comments made during the proof-reading; The here described
counters show considerable variance in the amplitudes of the pulses
during the counting of monochromatic particles, i.e. theyl- are not
suitable for spectrometry. At present, the laboratory of the
authors manufactures surface-barrier silicon counters which are
suitable for spectrometry (amplitude resolution less than 1% for
Ct-particles with energies of 5.5 MeV). The considerations
presented in the paper are in principle applicable also for such
spectrometric n-p counters. There are I figure and 3 Soviet
references.
ASSOCIATION: Fiziko-tekhnicheskiy institut AN SSSR (Physico-
technical Institute AS USSR)
SUBMITTED: February 20, 1960
Card 2/3

VITOVSKIY, N.A.; MASHOVETS, T.V.; RYVKIN, S.M.; SOIIDAYEVSKIY, V.P.
Energy spectrum of defects arising in Ge under the effect of ga=ma
radiation. Fiz. tver. tela 3 no. 3:998-1001 Mr 161.
. (MIRA 14:5)
(Crystals-Defects) (Germanium) (c-amma rays)

VITOVSKIYj N.A.; MALEYEV, P.I.; MATVEYEV, O.A.; RYVKIN, S.M.; TARKHIN, D.V.
Silicon n-p counters of heavy charged particles operating without
sources of power supply. Prib. i tekh. eksp. 6 no.2:82-83
Mr-Ap 61 (MIRA 141-9)
1. Fiziko-tekhnicheskiy institut AN SSSR.
(Nuclear counters)
V

VITOVSKIY, N.A.: LUKIRSKIY, D.P.; MASHOVETS, T.V.; ANKIN, S.M.
Energy spectrum of certain impurity atoms in germanium and silicon.
Fiz. tvpr. tela Is no.3:816-817 '62. (MIRA 15:4)
1. Fiziko-tekhnicheskiy institut imeni A.F.Ioffe AN SSSR, Leningrad.
(Semiconductors) (Latti6e defects)

,,. VITOVSKIYj__A.A.3 LUKIRSKIY, D.P.; MASHOVETS, T.V.; MYAKOTA, V.I.
Energy spectrum of defects in silicon caused by electron
irradiation. Fiz. tver. tela 4 no-5:1340-1145 MY 162.
(MIRA 15:5)
1. Fiziko-teldinicheakiy institut imeni A.F. loffe All
SSSR, Leningrad.
(Silicon crystals-Defects)
(Radiation)

AUTHORS:
TITLE:
PERIODICAL:
U144
6/18 621004101010321063
BIOBYB104
-V.i,t.ovs.kiy, N. A.,, Mashovets. T. V., and Ryvkin, S. M.
The energy spectrum of the gamma radiation defects in
silicon
Fizika tverdogo tela, v. 40 no. 10, 1962, 2845-2848
TEXT: The temperature dependence of the Hal-1 constant was studigd on n-
and p-type silicon samples before and after2their exposure to Cc 0 gamma
radiation. Irradiation (1-4-jo17 quanta/cm ; 1-15-10 '18 quanta/CM2),.-,._._
reduced the conductivity of silicon. The measurements carried out in the
range 55-4500K sh9wed, that irradiation gives rise to two levvle in the upper
half of the forbidden band that are ca"pableof'accepting electrons:
Ec -0.18 ev and E c - 0.5 ev. The production oross-sections of these levels
are approximately 1.4010- 26 cm2and 1.6-10- 27 cm21, respectively. In the
lower half of the foi~bidden band there was one level (E + 0.23,ev) with
a production crosa-section of about 1.2-10-27 CM2. Thevre are 2 figures
and 2 tables.
Card 1/2

S/18 62/004/010/032/063
The.enargy 9~,'eotrum of the g&'m~a... B108XBI04
ASSOCIATION: Fiziko-tekhnicfieAkiy institut im. A.' F. Ioffe AN SSSR,
Leninarad (Physicotechnical Institute imeni A. F. loffe
AS USSR, Lerxingrid)
SUBMITTED: MaY 30, 1962

3/101/62/004/010/033/063
B102/Bl12
AUTHORSt Vitovskiy, N. A., Mashovets, T. V.j and Hyvkin, S. M.
TIT LE t Determinati~n_o f-the*activation *nor.gy of impurity center
levels and of structural defects in semiconductors
PERIODICAM Fizika tverdogo tela, v. 4, no. 10, 1962, 2849 - 2853
TEM A study was made of the temperature dependence of the carrier con-
centration in semiconductors with impurities and defects, the spectra of
which are complicated by their being several types of levels. Accordl* to
measurements log n - f(I/T) is, in this case,.& complicated curve com- .-
prising plateaus of different lengths and-sootions with different inclina-
tions. Tl!e activation energy of all possible levels is calculated to obtain
a quantitattve theoretical description. For simplicity a semiconductor iii
considered h.-%ving two levels in the forbidden befid. At absolute zero one
of them should be partially filled with electronsi and the other should be
filled completely (Fig.- 2). The results can theya be generalized for an
arbitrary number of levels. *If, in the entire temperature range the rela-
tionAE2 - AE,-).kT is valid where 6E i are the 1qvol activation energies,
Card 1/4

r SlibIV621004101010331063
Determination of the... B102/1112
then the neutrality oonditiqn of the system can given by
i IL M,
dj';:~r -MI
72
the solutions is
MLY4-yj4Nx.(Mj-+-M
it= yV(T2Nj- (5)-
N,,v, ~ N,,.5;
The curve log n f(I/T) is divided into 6 sections (2 plateaus, 2 sloping
and 2 transition sections)p n.is calculated for e&ah section and the state
density is studied. With the aid of
dIgn 2.3A 3
AE2= 2 k Ir.
Card 2/4 C~.rOYL. in -otiginal

8/i61,/62/004/010/033/063
-Determination of the... B102/BI12
AE2 can be determined experimentally from the high-temperature inclined
section, if m and (M +m1) in the point a is determined from
1 2 t2 NcM 2 a I
n MJ MI. (7)
and d(log n)/d(l/T) is determined from the curve. The statie'"Icel weights
~142 of the levels need not be known but ri can be calculated from (7).
These relations are valid if M emle if M :>K
2Ij 2. Ithen the activation energy
can be calculated directly from the inclination of the curve with the aid
of
dign T)
k 2.
d(
This is calculated for a practical case. Finallig.-a further possibility is
pointed out of calculating AB2 from the temperathr~ dependence of the
carrier densityi the curveilog(n-mj)-f(1/T) can,be constructed and the
Card 3/4

s/ie'1/62/004/010/033/063
Det.ermination of the*.. I B102/B112
tangent whose inclination givers the activation ermVgy directly can be drawn
at the point corresponding tp _1q. (7). N denotes the effective state
1 0
density in the conduction band, M are the level concentrations and m is
the election concentration on the M level. Thet.e ~Rre 3 figures-
1
ASSOCIATIONt Fiziko-tekhnicheukiy institut im. A. F. loffe AN SSSR, Lenin-
grad (Physicotechnical Institute im*nt A. P. loffe AS USSR,
Leningrad)
SUBMITTEDs MaY 30, 1962
Fig. 2
Card 4/4
Aft MI.,
MS

L 13809-63 P1VP(q)/E,4T(m)/'T1S AVA-1 TG /LSD
ACCESSIal IIH: AP3003878 310181163IOr-ir;10071183311,4-'41
!AUMORI Vitovokly N.--A.) Konovalenko. B. H.;'Hashcrrets, T. V.; Iti*ykin, S. M.;
jT1TLE: aema-ray-generated defects in Leminim
7-
!,SOURCE: Fizika tverdogo tela, vo 5o no- 7, 1963, 1833-1841
-:TOPIC TAGS- gema-ray semiconductor irradiation, radiation dafect, nonopollar
annealing, bipolar annealing, germaaiun irradiation, germanium defect, germ-oni=
iABSTRACTi In the latest stage of research on the subject, dating back to 1959,
a large nuifber of n- and p-type specimens was investigated. N-type germazxiun
was doped with antimony and had a dcnor concentration between 2-1012 to 8.101,5
cm- p-type germanium was doped with gallium and had an acceptor concentration
.between 1012 to 1015 cm-5. The source was Co6O at~ a dosage of 2-1011 kV/Cta2-rec
and temperature of IOCo rMe work was aimed at clarifying the saturation of ir-
radiated specimens which occurs after polarity reversal, whereby further exposure
to radiation, however prolonged, no lonzer affects the slope of the thermal de.:
pendence of carrier concentrations The latter remains equal to the activation
euer&r., While the aekturation pioceas Is evident up to very high ca,,.centmti=
-:Card 1/2

T, 13809-63
ACCESSIM M AP3003878
of radiation defects, a adbatantially dlfferen-- situation Is c6tained in mcao-
polar annealing of interstitial atcms . ultimately leading to a variety of limitug
states of specimens exposed to gan= reAlation* A bipolar annealing effact OC-
Curring during the irradiation process Is considered responsible for the drop in
the defect-formatioa rate vith increabed dosage- of radiation. Both monopolar and
'bipolar annealing effects were found above rooz temperature. "The authors are
indebted to S. Ro Novilcov for interesting discussions." Orig. art. has: 9 figures
ASSOCIATICU: Teningradskly fUlko-tekhnicheskly 1natitut imo Ao F, Ioffe Aft SSSR
(Leningrad Physicotechnical Institixte, AN SSSR)
smamm i 3wan,63
DATz Acq: mus63 ENCL: 00
SUB CODEs PH xo w sov: W OMR 003
'card 2/2

- v
I it I'll -- ,
VITOVSKIYI, N.A.; MASHOW"ITS, T.V.j RYVKIN, S.M.; KIIASFVAROV, R.Yu.
Change of the electric and photoelectric properties of galliuz arsenide
irradiated by-1 Mev. electrons. Fiz. tver. tela 5 no.12:11510-3A23 b,63.
(MIRA 1712)
1. Fiziko-tekhnichaskiy institut imani A.F.Ioffo AN SSSR, Leningrad.

AL7'r- 0 RS iVitcrvsic ly, N A. Pwbcvets, T. V-
T -T LF , 1, poesible rz,4--tN-A c~P Inreci2e determ-4n,-itJc-ri of act~lvstvn er~cc-rlcv if
1, v "'i s I f
SCII' E
"I, gc +IcIZ nc
TOPIC Tr"tjS. activatlon t-mergy, Impurity lovel,
I T,
~111 I 'he aut lm-s s -I =-a -3t a -:7f G,-U -,~ ni: ac' va t f T

T. 1. -- ' ~! -6 5
=&'>SIGN M AP4039(A9
"he .onditlons
P~
(where p is the effective denzity of ~.tatea r, ~,j,_Et vajerc
v G JEi El_
trat ion of carft ors nsz
rim

. I
i
IL-U, for naktna a wull--`2~ '21 --'- -- --
and 1 !~OrMuls-
1~ ;~; : , ~; ~!~' ,_7 ~t)*Rhl ---"a ZIP

TREKALO, 8.K.; YAKUBTSIM, N.M.; AUDRONOV, V.N.; GRIGORIYEVYKH, G.F.:
KAYLOV, V.D.; SZJR, A.B.; v rabote prinimali uchastiye:
NEVMMHITSKIT, Te.Y.; SHOLENINOT, V.M.; VITOVSKIT, Y.M.-
GRINBERG, D.L.; GUrKAH. X.Te.; TWOROT. =-. --- -- --- ----
Open-hearth furnace operations with classified sinter. Stall
20 no. 12:1063-1070 D 160. (MIRA 13:12)
1. TSentrallnyy naucbno-isaledovatellskiy institut chernoy
metallurgii i Cherepovetskiy metallyrgicheokiy zavod,
(Blast furnaces) (Sintering)

LEVIN, L.Ya.; VANCHIKOV, V.A.; SHUR, A.B.; KAYLOV, V.D.; BYALrf, L.A.;
Prinimall uchastiyet RUSAKOV, P.G.; ANTONOV, V.H.; KOSTROV, V.A.;
XOTOV, A.P.; YEGOROV, N.D.; BUGAYEY, KA; SOLODKOV, V.I.;
YASHCHENKO, B.F. KOREGIN, A.V.; SAPOZHNIKOV, H.P.; TSUKANOV, VA;
- VITOVSKIYJ, V.m. *
Mastering the operation of high-capacity blast furnaces. Stall
23 no.9:773-778 3 163. (MIRA l6s1d)

J.
TDILIKI 0.,, Anz;
Measurement of the temperature of me.,rr:j-j,,,j and cxTraction of
flue gases in rotary kilns. Stavivo 4.1 nc.10:369-373 0 163.
1. Vyvojove oddeleni IICV, Ifranice.

TEMLIK., 0.2 inz.; VITOVSKYJ J.
Automatic grinding cortrol in tube mi.Us. Stavivo 41 no.11:
394-395 11163.
1. Vyvojove oddelenip Rranicka camentarna, Rranice.

, V: . ",.J
TEMIK, 0., Inz.; V', 1y
%pp8rf,tir4
Stavivo 42 r r$ . I i ~f
t , *r;ka cementarna a vrin-nice
1. Dovolopi~.,,.rt of the Rrin
National Fnt--rt-,rr..qa, llrqnica.

MIWV, B.G., doktor tekhn.nauk; VITOVTOVA, M.I., nai-chnyy sotrudnik;
ST-IIUIINIKDV. NA. , inza.-
Digestion of woodpulp for,fine capacitor paper, Bum#promo
37 no.lo.17-19 Ja t62, (MA 15;1)
1. Moskovskiy filial Vsesoyuznogo nauchno-issledovatellskogo
institute. tsellyulozno-bumazhnoy promyshlennosti (for Milov,
Titovtova). 2. Sullfatno-tsellyuloznyy zavod "Pitkyaranta"
(for Strumikov).
(Woodpulp)
(Paper products)

XORCHEMIX, F.I.; VITOVMVA, H.I.
Film formation during the conversion of the paper stock to
parchment, Bum.prom, 38 no.147-18 Ja 163. (MM 3.6t2)
1. Moskovskiy filial Veasoyuznogo nauchno-iseledovatellskogo
instituta tsellyulozno-bumazbnoy rorqshlennosti.
(Pape4

0
CLQu); Given Na=j
Coluitry: not givenj/
Ac1-',.j.cmG.c; Dcgrces: Dr.
Director of the International Organization for Epizooties
. - Cl-I Belgr
Sour ado,-Vaterinarski mlasnik, No 7, 1961p pp 547-554.
lklttt mActivity of the Intarnatlonal Organization for Epizooties and
the Rolo of Yugoslavia in the Aotivity of the Organization."

ACC NRs
334VENTOR! Vanil'yev, D. P,; Vitozhentop E, V.; Chernetsoyt It B#; Berlin, Y. B.;
Mosenkov; V. N.
ORG: None
TITLE: Direct rpm controller for low-power gas turbine engines. Class 46, No.
181448 (announced by the Central Scientific Research and Design Institute of Vehicle
and Stationax7 Engine Fuel Equipment CTGentrallnyy nauchno-iraledovatellskiy i kon-
struktorskiy institut toplivnoy apparatury avtotraktornykh i statsionarnykh dviga-
teley-)J
SOURCE: Izobreteniya, promyshlennyye obraztsy, tovarnyye znaki, no. 9, 1966, 126
TAGS: speed regulator, gas turbine engine
ABSTRACT: This Author's Certificate introduces: 1. A direct rpm controller for low-
power gas turbine engines. The unit contains an actuating mechanism made in the form
of a nozzle which interacts with a flat valve located in the arm of a balanced spring-
loaded centrifugal weight mounted on the cross connection of the power shaft. Con-
struction is simplified and friction is reduced by locating the nozzle and the fuel
channel in the power shaft. 2. A modification of thin device which may be adjusted
Auring engine operation,by uaing-a spring which acts on a lever and is equipped with
a screw for varying tension.
Card 1/2 uDc; 621,438,531.6,552.9

.I.,zmaozzlei 2-flat valve; 3-veight;
4-power shaft-, 5-spring; 6-screw
SUB-'CODE: 13, 211 SUBM DATE' OhMay64

(" , - 7- 7 1 -1 1 F I ' - -11.1 11-1-1 "
Flrdizuly A. ~:. .; VITO-ZHENTS, G. '!~. I "I. %!. -. 0. i.
I
"Gamma- act ivat ion aanal.'isis of rOck s'--I-Ple"'
report presented at SFap on Radiochemical Methods of Analysis, Salzburg, Austria,
19-23 oct 64.

VITMKO, P.M.
--- A -C~O~
NC-Orzt --W:,~ -:-,
Introduction of the 91recau conveyor belt vacumn power presses at
the Konstantinov refractory materials plant. Ogneupory 20 no.?:
326-327 '55- (KIRA 9:1)
(Power presses) (Firebrick)

- - - -
VlTMNKOs P. M.
29083-Suskka Isdeliy Na Zavode ((Kr"naya Zvezda)). Ogneupox7., 1949P No.~Ixj. a.
bIff-21,
90s lAtopis' ZhurnaltzWft ST&tey,, Val. 39., Moskva, lghg

-.0x go- I ILI Am, in, A--*
A tfoffj
---- 'All# 'WS A.* *PCOF-1-ft
1A
60
DRYING UF iluDUCTS AT RED STAR PLANT. Vitronko, PH
(Ogn,upory (Rsfraotorlos), 1949# vol. 419 he tunnel
type of dryer is used at thim'plant for drying rdinary
040 a
firebricks and nozzles. Th* dryer Is divided into 2 parts
with 9 tunnels in each. The first part, used for ordinry
bricks, works on solid fUel; the drying takes place by hot
*0
air. The second part, for nox-les, uses waste &&sod
from the coabu3tion of the solid fufl. T6 average
temperature of the ho# gases Is 100 C 1ho capacity of the
plant is 135 *are. Ji* water contest of the dry prodbacte
is about 4.6%.
;S aI'LA09TAILLUROCAL UTIF461W C1.01SWOCATOON
"AA110-1
r-T-T--T-r 1
U 0 if '0 "i; Ii it a it x Im
* 0 0 0 0 0 0 :1o
B,Ceram.R.A.
.00
too
i zoo
too
III
AMA 161WO x 019814414
0 0 0 0 0 90 0-

38078. VITRENKOJ, P. M.
Povyshenie proizvoditellnosti trubchatogo kalorifero na zavode krasnaya
zvezda. Ogneupory, 1949. No. 12, s. 553-55.

V IT RL, -P-1 I - , En f, r .
"Drying ware at the Krasnaya Zvezda plant"
OgneuporY, 110. 9, 1949

VITREN~T ~" V. -rn,e!r.
-,-
"Increasing the productiVity of a tute
calorfier at the 'Krasna~a Zvezdal
Plant"
Ogneupory, No. 12, 1949

ZHIKHAREVICH, S.A.; ZFJMSKAYA, A,-,- SAFRONOVA, I.P.; ZOZULYA, I.S.;
~E jp P.M.; CHERNYAVSKAYA,, Z.Ya.; ABRAMOVICH, A.M.
Production and service of graphite containing inser~ts. Ogneupory
29 no.12-t536-540 164. (MIRA 18i1)
1. Ukrainskiy nauchno-issledovatellskiy institut ogneuporov (for
Zhikharel,tch, Zelenskava, Safronova). 2. Konstantinol kiy
ogneupornyy zavod "KraBnyy Oktyabrl" (for Zozulya, Vitrenko,
Chernyavskayap Abramovich).

VITRENKO, L. H.
Vitrenko, L. Y. "Autor-atic control of separate Droduction processes in
coal-concentrating plants," RAoty, DCIVJGI (Donetskiy
nauck.-issled. ugoltnyy in-t), sYmpositm 4, 1948, p. 25-37
So: U-3566, 15 March 53, (Letopis 'Zhurnal Inykh Statey, No. 13, 1949)

KOTOV, I.; VITIMIKO,,T., inzh.
Introducing large structural elements into rural construction. Sell.
Btroi. 15 no.4:1.-7 Ap 161. (MIRA 24:6)
1. Glavnvy inzh. Upravleniya "Lenobletroy" (for Kotov).
(Precast concrete construction)
(Leningrad Province-Dairy barns)

VITWEANKO, T.V.
----------------
I
nhanges in the cardiovascular function under t~e effect of
animzIne. Flziol.zhur. (Ukr.] 10 no.4t534-537 JI-Ag 164.
(MIRA 18:11)
1, Kafedra patologicheskoy fiziologii Llvovskogo meditsinskogo
institutas

TANKHILEVICH, M.; VITRENKO, Yu.
From brick to prefabricated unit. Sell. stroi. fi.e.16) no.3:18-20
mr 62. (WIRA 15:7)
1. Glavnyy inzh. upravleniya stroitellstva Lenoblstroy (for
Tankhilevich).
(Leningrad Province-Precast concrete construction)
(Leningrad Province-Farm buildings)

VITRESHKOi I.A., inzh.; I-MIAM. A.V., kand. tekhn. nauk
Hydraulic tests of pressure pipelines. Vod. i san. tekh. n0-4:
32-35 Ap 164 (MIRA 18&1)

KOPYIDVI I.M.; VITRICHENKO E.A.- GALKINA, T.S.; GOLIANDSKIY, O.P.
- ~Lzzz~
Quantitative analysis of atmospheres of hot supergiants.
Part 4t Physical conditions in O-F supergiant atmospheres.
Izv. Krym. aBtrofiz. obser. 30:42-68 163. (MIRA 17:1)

KOPYLOV, I.M.; BELTAKINA, T.S.; VITRICHENKO, B.A.
; ~ 11-1-1.1'. -
Quantitative spectral classification of ")%tallic" stars. Izv.
Krym. astrofiz. obser.' 29t181-218 163. (MIRA 16:10)

MIA-MVP I.F.; =JC!i'-V.'tXO, B.A.
0
Spectral variability of the supergiantq Leonia. Astrcn. zhur.
41 no-0637-643 JI- Ag 164 (MIRA 17:8)
1. Krymskaya astrofizicheakaya observatoriya AN SSSR.

ACCESSION NR: "4043962 8/0033/64/041/004/OUT/0"3
AUTHOR: Malov, 1. F., Xitrichenko, E. A.
TITLE: Spectral variability o( the superglant Eta Lm
SOURCE: Astronomichesidy zhurnal, Y. 41, no. 4, 19", 637-"3
TOPIC TAGS: astronomy, stellar astronomy, supergiant star, star, stellar atmosphere,
stellar electron pressure, stellar variability
ABSTRACT: A study has been made of changes in the spectrum of the supergiant 711'eo
(AOIb). The investigation was based on 18 spectrograms obtained during 1958-60 using
the 5011 reflector of the Crimean Observatory with a dispersion of 23.4 A/mm at HY
The spectral region from 4600 A to HE was used. It was found that there are changes In
the equivalent widths and profiles of the hydrogen lines H5 and H-yas wen as In the
equivalent widths of the lines of metals. The authors discuss the problem of the possible
physical changes In the atmosphere of the star responsible for the observed spectral
changes. Estimates of the change in temperature lead to the value AT'f 1000C, changos
In electron pressure by a factor of 2 and a change in radius as great as 30%. It Is noted
that the changes in wA (equivalent width) and profiles of the hydrogen lines considerably
Card 1/3

ACCESSION NR: AP4043952
exceed observational errors. The probable relative error of one determination of w N is
not more than 10%, whereas the maximum change in w-.\ was 50%. Ile wings of the
hydrogen lines-are subject to considerable changes, probably associated with pressure
change. If the atmosphere remains in hydrostatic equilibrium at all times, the relative
change In radius of the star, corresponding to a change In acceleration by Ag, in.-
An / R -1/109
using a table in the text, it is found that-
(2)
ARIR..m
The minus sign means that on April 14, 1960 the radius of Moeo was 36% smaller than
on April 26, 1958. The electron density was determined'from the ionization state of Fe,
using the Saha formula; It Increased during this onme time by a factor of 2. & U the
changes in radius and temperature are correct, there should be a change in the brightness
of the star In visible rays up to Om. 14, in photographic rays up to Om. 21, and In color
COM 2/3

ACCESSION NR: AP4043952
Index tip to Om.07. However, this does not agree with the results obtained by E. S.
Drodskaya (Izv. Kry*mskoy astrofiz. observ., 6, 84, 1951). "The authors wish to thank
I. M. Kopy*lov for valuable advice and useful discussions of this subjecV. Orig. art.
has: 5 formulas, 5 figures and 7 tables.
ASSOCIATION: Kry*mskaya astrofizicheskaya observatoriya AkademU nauk SSM (Crimean
Astrophysical Observatory, Academy of Sciences of the SM)
SUBMITTED: 06Aug63 ENCL.- 00
SUB CODE: AA NO REF SOV: Oil OTHER: 005
Card 3/3

VITRIK, D.I~
All-Union Scientific Research Institute for the Organization and
Mechanization of Mine Building. Shakht.strol. no.11:21-22 N '57.
(MIRA 10:12)
1. Direktor Vaesoyusnogo nauchno-iseledovatellskogo institutA
organizatsii i mekhanizataii. sha"tnogo stroitel'stva.
(Mining engineering) (Mining machinery) (Research, Industrial)

BESSMUSYY, A.S., red.; DOROSHOKO, G.N., red.;
41 TZ Ra ILK
V.M., red.; KOKSBMW, B.G., red.; SLAVUTSKIY, S.M..
red.; SHISHOV, Ye.L., red.; SHK ARA, M.N.. doktor geolog..-
mineral.nauk, red.; VOLOVICH, M.Z., red.izd-va; BMSLAVSKATA,
L.Sh., takhn.red,; HAILIPINSKATA, A.A.j takhn.red,
[Studies in mine construction] Issledovaniia. po shakhtnomy
stroitelletvu. Moskva, Ugletekhizdat, 1958. 213 P. (MIRA 12:3)
1. lbarkov. Veasoyuznyy nauchno-isoledovatellskiy inntitut
organizateii shakhtnogo stroitellstva.
(Mining engineering)

VITRIK, Dmitriy Ivanovich; D'YACIOIKO, I.M.p red.; SHAFETA, S.M.s
-i;-d-.--
(Supporting vertical shafts with -walling cribs]Kreplenie
vertikallnykh stvolov bez opornykh ventsov. Kiev,, Gostekh-
izdat USSR, 1961. 96 p. (Mine timbering) (14MA 15:8)

VITRIK, D.I., kand.tekbn.nauk
Calcu"tion of the optima parameters of support belts in shaft
lining by reinforced concrete tubbing without cribs. Shakht.
otroi. 5 no.6:8-12 Je 161. (MM 14:6)
(Shaft sinking)

VITRIK, D.I., C~,.nd Tech " Study of ti;e posi -ability
4"441;"
and effoctiveri-,iso of cutting vertical iaine -40LUMUG -.,-ithout s,,r)-notI.-
in,,- rims." -Unapron !trovi3l:, 1)53. 18 I)P with (lAri of Higher
Lducation IJkSSR. Dneprop-.trov---'f-, Order of L~bor '-',(-,d B nner "'ining.
jy)s,~ jr, Artom), 120 copieo (hLl 25-58,112)
- 7~-

VITRIK, D.I., kand.takhn.nauk
Waterproofing properties of the grouting under mine shaft tubings.
Ugoll Ukr. 4 no. 11:17-19 N 160. (MMAL 13:12)
kGrouting) kShaft sinking)